CN102409306B - Preparation method of Ti-Mo-N multi-element film - Google Patents

Preparation method of Ti-Mo-N multi-element film Download PDF

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CN102409306B
CN102409306B CN 201110307385 CN201110307385A CN102409306B CN 102409306 B CN102409306 B CN 102409306B CN 201110307385 CN201110307385 CN 201110307385 CN 201110307385 A CN201110307385 A CN 201110307385A CN 102409306 B CN102409306 B CN 102409306B
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CN102409306A (en
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韩晓芬
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Inner Mongolia Zhongtian Hongyuan Rare Earth New Material Co ltd
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Abstract

The invention provides a preparation method of a Ti-Mo-N multi-element film. According to the invention, a high-property Ti-Mo-N three-element film is prepared by adopting a magnetic control sputtering method and taking Ti, Mo and N as the basic composition elements of the film; and the high-property Ti-Mo-N three-element film is prepared mainly through optimizing the preparation process parameters of the multi-element film. Compared with the Ti-N two-element film, a filmed sample has smooth appearance and good compactness; the elements on the surface of the film comprise the following components by atom percent: 30.5 of Ti, 28.3 of Mo and 41.2 of N; and the hardness of the film is 29 GPa, and the oxidization weight gain at the temperature of 800 DEG C is only half of that of the Ti-N film.

Description

A kind of preparation method of Ti-Mo-N multi-element film
Technical field
The present invention relates to a kind of preparation method of material surface coating, the preparation method of especially a kind of high performance Ti-Mo-N multi-element film.
Background technology
Ti-N binary film has high hardness, wear resistance and excellent rotproofness, thereby is widely used at surface preparation film coatings such as cutter, moulding stock to improve.Yet along with fast development of modern industry, material property has been proposed more and more higher requirement, an urgent demand improves the use properties of TiN in all respects such as hardness, wear resistance, erosion resistance, high-temperature oxidation resistances.
The method that is commonly used now mainly be in the TiN film, mix the 3rd, the 4th kind of element or to by thereby film is implemented the performances such as hardness that thermal treatment changes film.Yet because alternative doped element kind is more, and the step of preparation process parameter of film also varies, therefore select a kind of doped element of the film of TiN preferably, and find preparation technology's method of a kind of suitable TiN film correspondingly, for the performance that improves the TiN film and expand the use range of film and working conditions has great importance and actual using value.
Summary of the invention
At the problems referred to above, purpose of the present invention namely is to select suitable doped element with the preparation multi-element film into the TiN film, and optimizes the preparation technology parameter of multi-element film, thereby obtains a kind of preparation method of high performance thin film.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is as follows:
At first, be the essentially consist element of film with Ti, Mo, N, adopt the method for magnetron sputtering to prepare the Ti-Mo-N ternary film.
Particularly be that earlier with the substrate material surface polishing, and each cleans dry for standby behind about 10min in ultrasonic cleaner with hydrofluoric acid, acetone, alcohol and deionized water etc. respectively;
Subsequently, body material is placed on the sample table in the magnetron sputtering equipment vacuum chamber, and with pure Ti target and Ti 50Mo 50Alloys target places different negative electrode target position respectively;
Subsequently vacuum tightness in the vacuum chamber is extracted into≤5 * 10 -4Pa feeds the Ar that flow is 8-10sccm simultaneously, when gas pressure in vacuum is 2-4Pa, and pre-sputter 2-3min, the power of pre-sputter is 50-70W, with the film formation surface of further cleaning body material;
The flow of keeping Ar subsequently is 8-10sccm, control body material temperature is 40-50 ℃, when gas pressure in vacuum is 1-1.5Pa, apply the negative bias of 100-150V to body material, remove the baffle plate of pure Ti target simultaneously, power with 50-70W carries out sputter, and sputtering time is 5-10min, to form the pure Ti film of one deck;
Begin to feed the N that flow is 0.3-0.6sccm subsequently 2And the flow of keeping Ar is that 8-10sccm, gas pressure in vacuum are that the negative bias of 1-1.5Pa, body material is that the temperature of 100-150V, body material is 40-50 ℃, power with 50-70W carries out sputter, and sputtering time is 15-25min, to form one deck Ti-N binary film;
The flow of keeping Ar subsequently is 8-10sccm, N 2Flow be that 0.3-0.6sccm, gas pressure in vacuum are that the negative bias of 1-1.5Pa, body material is 100-150V, the temperature of rising body material is 80-100 ℃, closes the baffle plate of pure Ti target simultaneously and removes Ti 50Mo 50The baffle plate of alloys target carries out sputter with the power of 50-70W, and sputtering time is 80-100min, to form the Ti-Mo-N ternary film.
Advantage of the present invention is: formed multilayer Ti-Mo-N multi-element film of different nature at matrix surface, both obtained and matrix good binding performance, had excellent hardness, wear resistance, solidity to corrosion and high-temperature oxidation resistance again.
Embodiment
Below, the present invention is described in detail by specific embodiment.
Preparation and the heat treating method of a kind of high performance Ti-Mo-N multi-element film, it comprises following preparation process:
It is to be the essentially consist element of film with Ti, Mo, N, adopts the method for magnetron sputtering to prepare the Ti-Mo-N ternary film;
Select for use the W6Mo5Cr4V2 rapid steel as body material, earlier with the substrate material surface polishing, and each cleans dry for standby behind about 10min in ultrasonic cleaner with hydrofluoric acid, acetone, alcohol and deionized water etc. respectively;
Subsequently, body material is placed on the sample table in the magnetron sputtering equipment vacuum chamber, and with pure Ti target and Ti 50Mo 50Alloys target places different negative electrode target position respectively;
Subsequently vacuum tightness in the vacuum chamber is extracted into≤5 * 10 -4Pa feeds the Ar that flow is 9sccm simultaneously, when gas pressure in vacuum is 3Pa, and pre-sputter 2min, the power of pre-sputter is 60W, with the film formation surface of further cleaning body material;
The flow of keeping Ar subsequently is 9sccm, and control body material temperature is 40 ℃, when gas pressure in vacuum is 1.5Pa, apply the negative bias of 150V to body material, remove the baffle plate of pure Ti target simultaneously, carry out sputter with the power of 60W, sputtering time is 7min, to form the pure Ti film of one deck;
Begin to feed the N that flow is 0.4sccm subsequently 2, and the flow of keeping Ar is that 9sccm, gas pressure in vacuum are that the negative bias of 1.5Pa, body material is that the temperature of 150V, body material is 40 ℃, carries out sputter with the power of 60W, sputtering time is 20min, to form one deck Ti-N binary film;
The flow of keeping Ar subsequently is 9sccm, N 2Flow be that 0.4sccm, gas pressure in vacuum are that the negative bias of 1.5Pa, body material is 150V, the temperature of rising body material is 100 ℃, closes the baffle plate of pure Ti target simultaneously and removes Ti 50Mo 50The baffle plate of alloys target carries out sputter with the power of 60W, and sputtering time is 90min, to form the Ti-Mo-N ternary film.
Compare with Ti-N binary film, the sample appearance surfaces is smooth smooth after the film forming, and compactness is good, after tested, the atoms of elements percentage composition of film surface is 30.5Ti-28.3Mo-41.2N, and the hardness of film surface is 29GPa, and the oxidation weight gain under 800 ℃ of conditions only is half of Ti-N film.

Claims (1)

1. the preparation method of a Ti-Mo-N multi-element film, it is to be the essentially consist element of film with Ti, Mo, N, adopts the method for magnetron sputtering to prepare the Ti-Mo-N ternary film; Specifically comprise following preparation process:
Earlier with the substrate material surface polishing, and in ultrasonic cleaner, respectively clean dry for standby behind the 10min with hydrofluoric acid, acetone, alcohol and deionized water respectively;
Subsequently, body material is placed on the sample table in the magnetron sputtering equipment vacuum chamber, and with pure Ti target and Ti 50Mo 50Alloys target places different negative electrode target position respectively;
Subsequently vacuum tightness in the vacuum chamber is extracted into≤5 * 10 -4Pa feeds the Ar that flow is 8-10sccm simultaneously, when gas pressure in vacuum is 2-4Pa, and pre-sputter 2-3min, the power of pre-sputter is 50-70W, with the film formation surface of further cleaning body material;
The flow of keeping Ar subsequently is 8-10sccm, control body material temperature is 40-50 ℃, when gas pressure in vacuum is 1-1.5Pa, apply the negative bias of 100-150V to body material, remove the baffle plate of pure Ti target simultaneously, power with 50-70W carries out sputter, and sputtering time is 5-10min, to form the pure Ti film of one deck;
Begin to feed the N that flow is 0.3-0.6sccm subsequently 2And the flow of keeping Ar is that 8-10sccm, gas pressure in vacuum are that the negative bias of 1-1.5Pa, body material is that the temperature of 100-150V, body material is 40-50 ℃, power with 50-70W carries out sputter, and sputtering time is 15-25min, to form one deck Ti-N binary film;
The flow of keeping Ar subsequently is 8-10sccm, N 2Flow be that 0.3-0.6sccm, gas pressure in vacuum are that the negative bias of 1-1.5Pa, body material is 100-150V, the temperature of rising body material is 80-100 ℃, closes the baffle plate of pure Ti target simultaneously and removes Ti 50Mo 50The baffle plate of alloys target carries out sputter with the power of 50-70W, and sputtering time is 80-100min, to form the Ti-Mo-N ternary film.
CN 201110307385 2011-10-11 2011-10-11 Preparation method of Ti-Mo-N multi-element film Active CN102409306B (en)

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CN103898463B (en) * 2014-03-07 2015-11-11 浙江大学 A kind of polynary high-entropy alloy film and preparation method thereof
CN104602438B (en) * 2014-12-29 2017-07-14 中国原子能科学研究院 One kind inhales tritium target piece preparation method
JP6868426B2 (en) * 2016-03-29 2021-05-12 東北特殊鋼株式会社 Titanium alloy coating film and its manufacturing method, and titanium alloy target material manufacturing method
CN109440065B (en) * 2018-11-09 2020-07-14 南昌大学 Preparation method of nano-scale corrosion-resistant molybdenum-tungsten film on surface of magnesium alloy

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN101386976A (en) * 2008-10-31 2009-03-18 上海工程技术大学 Technique for magnetron sputtering TiN film on magnesium alloy surface
CN102115872A (en) * 2009-12-30 2011-07-06 沈阳天贺新材料开发有限公司 Preparation method for magnetron sputtering TiMo film on titanium alloy surface

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN101386976A (en) * 2008-10-31 2009-03-18 上海工程技术大学 Technique for magnetron sputtering TiN film on magnesium alloy surface
CN102115872A (en) * 2009-12-30 2011-07-06 沈阳天贺新材料开发有限公司 Preparation method for magnetron sputtering TiMo film on titanium alloy surface

Non-Patent Citations (4)

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Q.Yang, et al.."Wear resistant TiMoN coatings deposited by magnetron sputtering".《WEAR》.2005,第261卷119-125.
于翔,等."中频对靶磁控溅射合成TiN/Ti多层膜".《金属学报》.2006,第42卷(第6期),第662-666页.
于翔,等."中频对靶磁控溅射合成TiN/Ti多层膜".《金属学报》.2006,第42卷(第6期),第662-666页. *

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