CN102404886A - Full infrared radiation ceramic heater and manufacturing method thereof - Google Patents
Full infrared radiation ceramic heater and manufacturing method thereof Download PDFInfo
- Publication number
- CN102404886A CN102404886A CN2011103735735A CN201110373573A CN102404886A CN 102404886 A CN102404886 A CN 102404886A CN 2011103735735 A CN2011103735735 A CN 2011103735735A CN 201110373573 A CN201110373573 A CN 201110373573A CN 102404886 A CN102404886 A CN 102404886A
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- Prior art keywords
- sio
- heating core
- ceramic heating
- sic ceramic
- sic
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000005855 radiation Effects 0.000 title claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 81
- 229910016006 MoSi Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 7
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 65
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- 238000003723 Smelting Methods 0.000 claims description 12
- 239000011214 refractory ceramic Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 14
- 229910052681 coesite Inorganic materials 0.000 abstract 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract 7
- 239000000377 silicon dioxide Substances 0.000 abstract 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract 7
- 229910052682 stishovite Inorganic materials 0.000 abstract 7
- 229910052905 tridymite Inorganic materials 0.000 abstract 7
- 241001062472 Stokellia anisodon Species 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Resistance Heating (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a full infrared radiation ceramic heater and a manufacturing method thereof. The full infrared radiation ceramic heater comprises a SiC ceramic heating core; and a SiO2 glass layer with the thickness of 200 to 600 micrometers is attached to the inner surface as well as the outer surface of the SiC ceramic heating core. The manufacturing method comprises the steps as follows: irradiating the inner and the outer surfaces of the SiC ceramic heating core with laser beams; spraying a MoSi layer on the inner surface as well as the outer surface of the SiC ceramic heating core; placing the SiC ceramic heating core in a drying oven for drying; powering on and heating to form SiO2 substrate; immersing the SiC ceramic heating core in SiO2 smelt and then taking out to form rudiment of the SiO2 glass layers; and reducing the temperature to ordinary temperature. The invention has the advantages that the thicknesses of the SiO2 glass layers in the ceramic heater can be reduced effectively, the temperature rising speed of the ceramic heater can be improved, the manufacturing process is simple and convenient and is easy to operate, the production efficiency is high, the bonding strength of the SiO2 glass layers and the ceramic heating core is strong, so that the SiO2 glass layers can not drop off, the service life is long, the defective percentage is low during production, and the manufacturing cost can be reduced for enterprises advantageously.
Description
Technical field
The present invention relates to ceramic heater, specifically a kind of full infrared radiation ceramic heater and preparation method thereof.
Background technology
People need at SiC plane of crystal growth SiO when using the SiC crystal to make heater at present
2Come the SiC crystal is protected, improve the oxidation resistance of heater, increase the service life.The manufacture method of existing ceramic heater is that the heating core that the SiC crystal is made is encapsulated in double-deck SiO
2In the glass tube, and make the two fixed connection through welding manner.The ceramic heater that this method is made can be realized the water power isolation effect, and the infrared radiation that the SiC crystal produces can pass SiO smoothly
2Glass.The heat that the SiC crystal sends needs elder generation and SiO
2Glass tube carries out heat exchange, again by SiO
2Glass tube comes out heat, so SiO
2The thickness of glass tube has determined the speed that ceramic heater heats up, because double-deck SiO
2Glass tube needs SiO at least when under the prior art condition, making
2Glassy layer has the thickness of 1mm, and therefore all there is the fast inadequately shortcoming of programming rate in present existing ceramic heater.In addition, in the manufacture method of existing ceramic heater, the encapsulation of heating core and welding process complex steps, operation easier is bigger, and production efficiency is lower, SiO
2The bonding strength of glassy layer and ceramic heating core is lower, the long-time back SiO that uses
2Glassy layer comes off easily, and useful life is shorter, and the defect rate during production is more than 5%, and the production cost of enterprise is higher.
Summary of the invention
The purpose of this invention is to provide a kind of full infrared radiation ceramic heater and preparation method thereof, it can effectively reduce SiO in the ceramic heater
2The thickness of glassy layer, the programming rate of raising ceramic heater, and the course of processing is easy, easy operating, and production efficiency is high, SiO
2The bonding strength of glassy layer and ceramic heating core is high, SiO
2Glassy layer can not come off, long service life, and the defect rate during production is low, helps enterprise and reduces production costs.
The present invention is for realizing above-mentioned purpose, and realize through following technical scheme: comprise the SiC ceramic heating core, SiC ceramic heating core surfaces externally and internally all is attached with SiO
2Glassy layer, SiO
2The thickness of glassy layer is 200-600 μ m.
The manufacture method of full infrared radiation ceramic heater comprises the steps:
1. make ceramic heating core with the SiC crystal;
2. use power to be 1-1.3KW, power density is 35-45 * 10
5W/cm
3Laser beam with the process velocity irradiation SiC ceramic heating core surfaces externally and internally of 30mm/ second, make smooth, the uniformity of SiC ceramic heating core surfaces externally and internally;
3. the SiC ceramic heating core surfaces externally and internally after the laser cleaning sprays the thick MoSi layer of 50-100 μ m;
4. the SiC ceramic heating core with the 3. middle spraying MoSi of step layer places drying oven, and oven dry is 1.9-2.1 hour in 180-200 ℃ temperature, obtains having the SiC ceramic heating core of MoSi layer;
5. will have SiC ceramic heating core energising under the normal temperature in air of MoSi layer, and make the SiC crystal heating to 1680-1750 ℃, and keep energising 5 minutes, make the MoSi and the airborne O of SiC ceramic heating core surfaces externally and internally
2Reaction generates SiO
2, SiO
2Be grown in SiC ceramic heating core surfaces externally and internally, form SiO
2Compact film obtains SiO at SiC ceramic heating core surfaces externally and internally
2Substrate;
6. surfaces externally and internally is had SiO
2The SiC ceramic heating core of substrate is inserted SiO
2In the smelting furnace, SiO
2The neon of logical 0.01Mpa in the smelting furnace, SiO
2In the smelting furnace and 1600 ℃ SiO is housed
2Fused mass will have SiO
2The SiC ceramic heating core of substrate immerses 1600 ℃ SiO
2In the fused mass, keep taking out after 5 minutes, be cooled to 1460 ℃, make SiO
2SiO in the smelting furnace
2Molecular link gathers in substrate, forms SiO
2The glassy layer blank;
7. with 1460 ℃ the SiO that has
2The SiC ceramic heating core of glassy layer blank moves in the deshydroxy stove, progressively is cooled to normal temperature, on SiC ceramic heating core surfaces externally and internally, obtains the SiO that thickness is 200-600 μ m
2Glassy layer.
Before 3. step sprays MoSi material powder, the refractory ceramics sleeve pipe is installed in the position of SiC ceramic heating core connection electrode.
The invention has the advantages that: SiO
2The thickness of glassy layer reduces for comparing with existing product significantly, can effectively improve the programming rate of ceramic heater, and temperature rises to the used time of peak and is merely existing SiO on the market
2/ 3rd of a full infrared radiation ceramic heater product of glassy layer the thinnest (being about 1mm); Do not need heating core and SiO during making
2Glass encapsulates and welds, but lets SiO
2Glassy layer is grown directly upon SiC ceramic heating core surfaces externally and internally, can effectively reduce SiO in the ceramic heater
2The thickness of glassy layer has been simplified production method simultaneously, and the existing technology of production efficiency has improved about 5 times, has reduced operation easier, SiO
2The bonding strength of glassy layer and ceramic heating core is high, SiO
2Glassy layer can not come off, and experiment shows its useful life than about 1.9 times of prior art prolongations, and the defect rate of product is lower than 1 ‰ in the production, helps enterprise and reduces production costs.
Description of drawings
Fig. 1 is the structural representation of ceramic heater according to the invention.
Embodiment
Full infrared radiation ceramic heater of the present invention comprises SiC ceramic heating core 1, and SiC ceramic heating core 1 surfaces externally and internally all is attached with SiO
2Glassy layer 2, SiO
2The thickness of glassy layer 2 is 200-600 μ m.Ceramic heater of the present invention is compared with existing product, SiO
2The thickness of glassy layer significantly reduces, and can effectively improve the programming rate of ceramic heater.Full infrared radiation ceramic heater temperature of the present invention rises to the used time of peak and is merely existing SiO on the market
2/ 3rd of a full infrared radiation ceramic heater product of glassy layer the thinnest (being about 1mm).
The manufacture method of full infrared radiation ceramic heater of the present invention comprises the steps:
1. make ceramic heating core with the SiC crystal;
2. use power to be 1-1.3KW, power density is 35-45 * 10
5W/cm
3Laser beam with the process velocity irradiation SiC ceramic heating core surfaces externally and internally of 30mm/ second, make smooth, the uniformity of SiC ceramic heating core surfaces externally and internally;
3. the SiC ceramic heating core surfaces externally and internally after the laser cleaning sprays the thick MoSi layer of 50-100 μ m;
4. the SiC ceramic heating core with the 3. middle spraying MoSi of step layer places drying oven, and oven dry is 1.9-2.1 hour in 180-200 ℃ temperature, obtains having the SiC ceramic heating core of MoSi layer;
5. will have SiC ceramic heating core energising under the normal temperature in air of MoSi layer, and make the SiC crystal heating to 1680-1750 ℃, and keep energising 5 minutes, make the MoSi and the airborne O of SiC ceramic heating core surfaces externally and internally
2Reaction generates SiO
2, SiO
2Be grown in SiC ceramic heating core surfaces externally and internally, form SiO
2Compact film obtains SiO at SiC ceramic heating core surfaces externally and internally
2Substrate;
6. surfaces externally and internally is had SiO
2The SiC ceramic heating core of substrate is inserted SiO
2In the smelting furnace, SiO
2The neon of logical 0.01Mpa in the smelting furnace, SiO
2In the smelting furnace and 1600 ℃ SiO is housed
2Fused mass will have SiO
2The SiC ceramic heating core of substrate immerses 1600 ℃ SiO
2In the fused mass, keep taking out after 5 minutes, be cooled to 1460 ℃, make SiO
2SiO in the smelting furnace
2Molecular link gathers in substrate, forms SiO
2The glassy layer blank;
7. with 1460 ℃ the SiO that has
2The SiC ceramic heating core of glassy layer blank moves in the deshydroxy stove, progressively is cooled to normal temperature, on SiC ceramic heating core surfaces externally and internally, obtains the SiO that thickness is 200-600 μ m
2Glassy layer.
The laser power of step in 2. is preferably 1.2KW, and power density is preferably 40 * 10
5W/cm
3, SiC ceramic heating core surfaces externally and internally is heated to the temperature that just can make the SiC crystal melting, cooling immediately makes SiC ceramic heating core smooth surface, uniformity behind the SiC crystal melting.Step 3. in the thickness of MoSi layer can in the 50-100 mu m range, adjust with border situation factually, the thickness of MoSi layer can not come off in the time of can guaranteeing the oven dry of MoSi layer in this scope the time, wherein the preferred thickness of MoSi layer is 75 μ m.The bake out temperature of step in 4. is preferably 190 ℃; Drying time is preferably 2 hours, and the actual effect during according to oven dry can be with bake out temperature suitably adjustment in 180-200 ℃ of scope, and drying time is 1.9-2.1 hour; Then can to cause the MoSi layer to adhere to insecure if exceed this scope, is prone to come off.The SiO that step can make SiC ceramic heating core surfaces externally and internally generate more than the SiC crystal heating to 1680 ℃ in 5.
2Fusion, the cooling back forms uniform SiO
2Compact film, but SiC crystal heating temperature should not be higher than 1750 ℃, if be higher than this temperature, SiO
2Compact film mobile too high causes SiO
2The compact film uneven thickness influences SiO
2The quality of substrate, wherein the preferred temperature of SiC crystal heating is 1710 ℃, SiO under this temperature
2The state of fused mass can form the highest SiO of the uniformity
2Compact film.Step 1460 ℃ described in 6. are SiO
2The critical temperature that glass is begun to solidify by liquid state, i.e. SiO
2After glass begins to solidify, will have SiO again
2The SiC ceramic heating core of glassy layer moves to the deshydroxy descent of temperature.7. step will have SiO
2The SiC ceramic heating core of glassy layer blank moves to progressively to lower the temperature in the deshydroxy stove can eliminate residual stress.This manufacture method does not need heating core and SiO
2Glass encapsulates and welds, but lets SiO
2Glassy layer is grown directly upon SiC ceramic heating core surfaces externally and internally, can effectively reduce SiO in the ceramic heater
2The thickness of glassy layer makes SiO
2The thickness of glassy layer is merely 200-600 μ m, can improve the programming rate of ceramic heater, has simplified production method simultaneously, and production efficiency has improved about 5 times than existing methods, has reduced operation easier, SiO
2The bonding strength of glassy layer and ceramic heating core is high, SiO
2Glassy layer can not come off, and experiment shows its useful life than about 1.9 times of prior art prolongations, and the defect rate of product is lower than 1 ‰ in the production, helps enterprise and reduces production costs.
In the manufacture method of full infrared radiation ceramic heater of the present invention,, can before 3. step sprays MoSi material powder, the refractory ceramics sleeve pipe be installed in the position of SiC ceramic heating core connection electrode in order on the SiC ceramic heating core, to reserve the electrode link position.The refractory ceramics sleeve pipe is by ZrO
2, Al
2O
3Process Deng high temperature ceramic material, its fusing point is higher than 2000 ℃, can stop during spraying MoSi material powder that MoSi material powder attached to the position that the refractory ceramics sleeve pipe is installed, makes this position can not generate SiO
2Glassy layer, step 7. lower the temperature finish after, take off the refractory ceramics sleeve pipe and get final product.
Claims (3)
1. full infrared radiation ceramic heater comprises SiC ceramic heating core (1), and it is characterized in that: SiC ceramic heating core (1) surfaces externally and internally all is attached with SiO
2Glassy layer (2), SiO
2The thickness of glassy layer (2) is 200-600 μ m.
2. the manufacture method of full infrared radiation ceramic heater is characterized in that: comprise the steps:
1. make ceramic heating core with the SiC crystal;
2. use power to be 1-1.3KW, power density is 35-45 * 10
5W/cm
3Laser beam with the process velocity irradiation SiC ceramic heating core surfaces externally and internally of 30mm/ second, make smooth, the uniformity of SiC ceramic heating core surfaces externally and internally;
3. the SiC ceramic heating core surfaces externally and internally after the laser cleaning sprays the thick MoSi layer of 50-100 μ m;
4. the SiC ceramic heating core with the 3. middle spraying MoSi of step layer places drying oven, and oven dry is 1.9-2.1 hour in 180-200 ℃ temperature, obtains having the SiC ceramic heating core of MoSi layer;
5. will have SiC ceramic heating core energising under the normal temperature in air of MoSi layer, and make the SiC crystal heating to 1680-1750 ℃, and keep energising 5 minutes, make the MoSi and the airborne O of SiC ceramic heating core surfaces externally and internally
2Reaction generates SiO
2, SiO
2Be grown in SiC ceramic heating core surfaces externally and internally, form SiO
2Compact film obtains SiO at SiC ceramic heating core surfaces externally and internally
2Substrate;
6. surfaces externally and internally is had SiO
2The SiC ceramic heating core of substrate is inserted SiO
2In the smelting furnace, SiO
2The neon of logical 0.01Mpa in the smelting furnace, SiO
2In the smelting furnace and 1600 ℃ SiO is housed
2Fused mass will have SiO
2The SiC ceramic heating core of substrate immerses 1600 ℃ SiO
2In the fused mass, keep taking out after 5 minutes, be cooled to 1460 ℃, make SiO
2SiO in the smelting furnace
2Molecular link gathers in substrate, forms SiO
2The glassy layer blank;
7. with 1460 ℃ the SiO that has
2The SiC ceramic heating core of glassy layer blank moves in the deshydroxy stove, progressively is cooled to normal temperature, on SiC ceramic heating core surfaces externally and internally, obtains the SiO that thickness is 200-600 μ m
2Glassy layer.
3. the manufacture method of full infrared radiation ceramic heater according to claim 2 is characterized in that: before 3. step sprays MoSi material powder, in the position of SiC ceramic heating core connection electrode the refractory ceramics sleeve pipe is installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110373573.5A CN102404886B (en) | 2011-11-22 | 2011-11-22 | Full infrared radiation ceramic heater and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110373573.5A CN102404886B (en) | 2011-11-22 | 2011-11-22 | Full infrared radiation ceramic heater and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102404886A true CN102404886A (en) | 2012-04-04 |
| CN102404886B CN102404886B (en) | 2014-01-15 |
Family
ID=45886536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110373573.5A Expired - Fee Related CN102404886B (en) | 2011-11-22 | 2011-11-22 | Full infrared radiation ceramic heater and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102404886B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1215385A (en) * | 1996-04-13 | 1999-04-28 | 海克·莫哈安 | Process for upgrading sic heating elements |
| JP2006012459A (en) * | 2004-06-22 | 2006-01-12 | Matsushita Electric Works Ltd | Infrared ray emitting element |
| CN201352860Y (en) * | 2009-02-13 | 2009-11-25 | 周存文 | Infrared radiation ceramic heater |
-
2011
- 2011-11-22 CN CN201110373573.5A patent/CN102404886B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1215385A (en) * | 1996-04-13 | 1999-04-28 | 海克·莫哈安 | Process for upgrading sic heating elements |
| JP2006012459A (en) * | 2004-06-22 | 2006-01-12 | Matsushita Electric Works Ltd | Infrared ray emitting element |
| CN201352860Y (en) * | 2009-02-13 | 2009-11-25 | 周存文 | Infrared radiation ceramic heater |
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| Publication number | Publication date |
|---|---|
| CN102404886B (en) | 2014-01-15 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING DONGFANG QIJING NEW ENERGY TECHNOLOGY DEVE Free format text: FORMER OWNER: ZHOU CUNWEN Effective date: 20140117 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhou Cunwen Inventor after: Zhou Bing Inventor after: Ren Qiyong Inventor before: Zhou Cunwen Inventor before: Zhou Bing |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: ZHOU CUNWEN ZHOU BING TO: ZHOU CUNWEN ZHOU BING REN QIYONG Free format text: CORRECT: ADDRESS; FROM: 250013 JINAN, SHANDONG PROVINCE TO: 100044 HAIDIAN, BEIJING |
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| TR01 | Transfer of patent right |
Effective date of registration: 20140117 Address after: 100044, Beijing, Three Mile River Road, 11, housing department, South Building 101, Room 102 Patentee after: Beijing Dongfang Qijing New Energy Science & Technology Development Center Address before: 250013 Shandong Province, Lixia District of Ji'nan City No. 1 min Zi Qian Road No. 5 Building 3 unit 101 room Patentee before: Zhou Cunwen |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140115 Termination date: 20171122 |
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| CF01 | Termination of patent right due to non-payment of annual fee |