CN102403435A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
CN102403435A
CN102403435A CN2010102753515A CN201010275351A CN102403435A CN 102403435 A CN102403435 A CN 102403435A CN 2010102753515 A CN2010102753515 A CN 2010102753515A CN 201010275351 A CN201010275351 A CN 201010275351A CN 102403435 A CN102403435 A CN 102403435A
Authority
CN
China
Prior art keywords
light
emitting diode
led chip
conversion body
light conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010102753515A
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Chinese (zh)
Inventor
赖志铭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
Original Assignee
Foxsemicon Integrated Technology Shanghai Inc
Foxsemicon Integrated Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxsemicon Integrated Technology Shanghai Inc, Foxsemicon Integrated Technology Inc filed Critical Foxsemicon Integrated Technology Shanghai Inc
Priority to CN2010102753515A priority Critical patent/CN102403435A/en
Publication of CN102403435A publication Critical patent/CN102403435A/en
Pending legal-status Critical Current

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Abstract

A light emitting diode comprises an LED chip, a packaging body and a lens, the LED chip is wrapped by the packaging body, and the lens is combined on the packaging body and comprises a body and a light converter. The middle of one side of the body facing the LED chip recesses to form a holding space, the light converter is held in the holding space, emergent light of the LED chip enters the body after passing through the light converter, and light converting substance capable of changing light wave of the emergent light of the LED chip is disposed in the light converter.

Description

Light-emitting diode
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
Light-emitting diode is as a kind of emerging light source, and have advantages such as long working life, energy-saving and environmental protection because of it generally good by market.The module of being made up of light-emitting diode can produce the light source of high brightness, replaces conventional lighting sources such as incandescent lamp just gradually and in light fixture, is applied, such as indoor illumination light fitting.
At present, in a lot of led lamps, its light source adopts blue LED chip, and directly covers one deck yellow phosphor coating in chip periphery.When chip sends blue light, the part blue light is just converted to the gold-tinted of spectrum broad by this fluorescent material, thereby the blue light that the yellow light mix of being changed is not changed forms white light.Yet on the one hand, because fluorescent material directly is coated on the light-emitting diode chip for backlight unit, the heat effects fluorescent material that produces during light-emitting diode chip for backlight unit work and change its absorption and emission spectrum causes the light-emitting diode colour temperature uneven.In addition because the volume of light-emitting diode is less, make the fluorescent coating processing difficulties, cause the manufacturing cost of light-emitting diode higher.
Summary of the invention
In view of this, the light-emitting diode that is necessary that a kind of low cost of manufacture is provided and has even colour temperature.
A kind of light-emitting diode; Comprise a led chip, coat a packaging body of this led chip and be incorporated into the lens on this packaging body; These lens comprise a body and a smooth conversion body, and this body is towards the concavity of a side of this led chip and form a receiving space, and this light conversion body is contained in this receiving space; The emergent light of this led chip gets in this body via this light conversion body, has the light transformational substance of the emergent light wavelength that can change this led chip in this light conversion body.
Compare with the light-emitting diode that directly fluorescent material is coated on the chip traditionally; The light conversion body of light-emitting diode of the present invention is located in these lens; The heat effects of having avoided contacting and having produced when receiving chip operation with chip, thus avoided the uneven phenomenon of colour temperature to produce.In addition, this light conversion body is as the part of lens and be incorporated in the body of lens, and processing procedure is simple, has reduced the manufacturing cost of light-emitting diode.
Description of drawings
Fig. 1 is the generalized section of light-emitting diode in one embodiment of the invention.
Fig. 2 is the exploded view of light-emitting diode shown in Figure 1.
Fig. 3 is the curve of light distribution figure of the chip of light-emitting diode among Fig. 1.
The main element symbol description
Light-emitting diode 100
Pedestal 10
Accommodation space 12
End face 14
Opening 16
Chip 20
Packaging body 30
Lens 40
Body 42
Outer surface 421
Basal surface 422
Inner surface 424
Receiving space 427
Light conversion body 44
Matrix 442
Light transformational substance 444
Bottom surface 446
Embodiment
See also Fig. 1 and Fig. 2, light-emitting diode 100 comprises a pedestal 10, is located at the chip 20 in this pedestal 10, lens 40 that coat a packaging body 30 of this chip 20 and be located at these pedestal 10 tops in one embodiment of the invention.In the present embodiment, this chip 20 is a blue-light LED chip, sends blue light during these chip 20 work.
The material of this pedestal 10 can be a metal material, like the alloy of copper, tin, aluminium, gold, silver, molybdenum, tungsten, magnesium or above-mentioned metal; Also can be ceramic material non-conductive, high heat conductance, like aluminium oxide (Al 2O 3), aluminium nitride (AlN), beryllium oxide (BeO 2), carborundum (SiC) etc.; Can also be semi-conducting material, like silicon (Si) etc.This pedestal 10 forms a bowl-shape accommodation space 12 in the mediad lower recess of its end face 14, thereby the end face of this pedestal 10 14 forms opening 16.The cross section of this accommodation space 12 is trapezoidal, and its size increases progressively to opening 16 positions from the middle part of pedestal 10 gradually.This chip 20 is located at the bottom central of this accommodation space 12.The end face 14 of the end face of this chip 20 and this pedestal 10 is spaced a distance.This packaging body 30 is located in this accommodation space 12, and coats this chip 20.In the present embodiment, this packaging body 30 is filled and led up this accommodation space 12, and the end face of this packaging body 30 flushes with the end face 14 of this pedestal 10.
Shown in Figure 3 is the curve of light distribution figure of this chip 20.The light intensity I of these chip 20 emergent lights is lambert (Lambertian) with respect to angle of emergence θ and distributes, and promptly the light intensity I of emergent light and angle of emergence θ satisfy following relation: I=I 0Xcos θ, 0 °≤θ≤90 °; Wherein, I 0Be the light intensity of these led chip 20 central shaft O place emergent lights, angle of emergence θ is the angle of emergent light and this led chip 20 central shaft O.
These lens are incorporated on the end face 14 of this pedestal 10.These lens 40 comprise a body 42 and a smooth conversion body 44.The profile of this body 42 roughly is the hemisphere bodily form, and it is in being recess near centre of sphere place.This body 42 has an outer surface 421, a basal surface 422 and an inner surface 424.This outer surface 421 is the exiting surface of these lens 40.This basal surface 422 is positioned at the bottom of these lens 40.Be recessed to form a receiving space 427 on the mediad of this basal surface 422, this inner surface 424 is positioned at receiving space 427, and the outer peripheral edges of this inner surface 424 are connected with this basal surface 422.The central shaft O of the central shaft of this receiving space 427 and this chip 20 is on same straight line.The angle of emergence θ of the depth H of this receiving space 427 and this chip 20 emergent lights satisfies following relation: H=H 0Xcos θ, 0 °≤θ≤90 °; Wherein, H 0For 427 pairs of receiving spaces should chip 20 central shaft O places the degree of depth.Angle of emergence θ is the angle between these chip 20 emergent lights and this chip 20 central shaft O.Promptly the angle of emergence θ of relative these chip 20 emergent lights of the depth H of this receiving space 427 is youth uncle distribution.In addition, the depth H that 427 pairs of this receiving spaces should chip 20 central shaft O places 0Be less than or equal to 500 μ m.Preferably, H 0Be less than or equal to 300 μ m.
This light conversion body 44 comprises a matrix 442 and is uniformly distributed in the light transformational substance 444 in this matrix 442.This light transformational substance 444 is used to change chip 20 part outgoing light wavelengths, and changes the color of chip 20 these part emergent lights.This matrix 442 is processed by light transmissive material, like resin (Resin), epoxy resin (Epoxy), silica gel (Silicone), transparent polyester optical material, PETG (Polyethylene terephthalate), gather carbonic acid resin (PC), acryl, polymethyl methacrylate (PMMA), low-melting glass (Low temperature melting glass), silicon nitride (SiN X), silicon dioxide (SiO 2) etc.
This light transformational substance 444 is a fluorescent material, and this fluorescent material can be sulfide, aluminate, oxide, silicate, nitride, nitrogen oxide etc.Concrete, as: Ca 2Al 12O 19: Mn, (Ca, Sr, Ba) Al 12O 4: Eu, Y 3Al 5O 12: Ce 3+(YAG), Tb 3Al 5O 12: Ce 3+(TAG), BaMgAl 10O 17: Eu 2+(Mn 2+), Ca 2Si 5N 8: Eu 2+, (Ca, Sr, Ba) S:Eu 2+, (Mg, Ca, Sr, Ba) 2SiO 4: Eu 2+, (Mg, Ca, Sr, Ba) 3Si 2O 7: Eu 2+, Ca 8Mg (SiO 4) 4Cl 2: Eu 2+, Y 2O 2S:Eu 3+, (Sr, Ca, Ba) Si xO yN z: Eu 2+, (Ca, Mg, Y) Si wAl xO yN z: Eu 2+, CdS, CdTe, CdSe etc.In the present embodiment, this light transformational substance 444 is a yellow fluorescent powder.
This light conversion body 44 is contained in the receiving space 427 of this body 42.After this light conversion body 44 can be filled in the receiving space 427 of this body 42 through the spraying or the mode of silk screen printing; Form through solidifying again; Thereby the shape of this light conversion body 44 and this receiving space 427 are complementary; And this light conversion body 44 is filled and led up this receiving space 427, and the bottom surface 446 of this light conversion body 44 is a plane.Basal surface 422 flush of this bottom surface 446 and this body 42, thus constitute the bottom surface of these lens 40 jointly.The area of the bottom surface 446 of this light conversion body 44 is greater than the area of the opening 16 of this pedestal 10.The bottom surface 446 of this light conversion body 44 is the incidence surface of these lens 40.
Because the shape of the shape of this light conversion body 44 and the receiving space 427 of this body 42 is complementary; Thereby the central shaft of this light conversion body 44 also with the central shaft O of chip 20 on same straight line; And the thickness T of this light conversion body 44 angle of emergence θ of these chip 20 emergent lights relatively also is youth uncle distribution, the i.e. thickness T=T of this light conversion body 44 0Xcos θ, 0 °≤θ≤90 °; Wherein, T 0For 44 pairs of this light conversion bodies should chip 20 central shaft O places thickness.Angle of emergence θ is the angle between these chip 20 emergent lights and this chip 20 central shaft O.Correspondingly, this light conversion body 44 to thickness T that should chip 20 central shaft O places 0Be less than or equal to 500 μ m.Preferably, T 0Be less than or equal to 300 μ m.
The bottom surface of these lens 40 is incorporated on the end face 14 of this pedestal 10, and wherein, the end face of this packaging body 30 is close in the bottom surface 446 of the light conversion body 44 of these lens 40, makes the exiting surface of this chip 20 overlap with the incidence surface of these lens 40.In addition, the bottom surface 446 of this light conversion body 44 covers this opening 16 fully, thereby can guarantee that the light that this chip 20 is sent passes this light conversion body 44 all.
During these light-emitting diode 100 work, the blue ray that its chip 20 sends penetrates from the opening 16 of this pedestal 10, and penetrates this light conversion body 44.When the part blue light passes through this light conversion body 44, converted to gold-tinted, form white light after the blue light that this gold-tinted and other are not changed by the yellow fluorescent powders in this light conversion body 44.Present embodiment is through forming light conversion body 44 in the matrix that fluorescent material is mixed in printing opacity, and with the mode of spraying or silk screen printing this light conversion body 44 is incorporated in the body 42 of these lens 40, and becomes the part of lens 40.Compare traditional method that directly fluorescent material is coated on the light-emitting diode chip for backlight unit surface, light-emitting diode 100 processing procedures of present embodiment are simple, low cost of manufacture.And this fluorescent material is avoided fluorescent material to receive the temperature effect that produces when chip 20 is worked, thereby is avoided the uneven phenomenon of colour temperature to take place away from this chip 20.

Claims (10)

1. light-emitting diode; Comprise a led chip, coat a packaging body of this led chip and be incorporated into the lens on this packaging body; It is characterized in that: these lens comprise a body and a smooth conversion body; This body is towards the concavity of a side of this led chip and form a receiving space; This light conversion body is contained in this receiving space, and the emergent light of this led chip gets in this body via this light conversion body, has the light transformational substance of the emergent light wavelength that can change this led chip in this light conversion body.
2. light-emitting diode as claimed in claim 1 is characterized in that: the light intensity I of the emergent light of this led chip is lambert (Lambertian) with respect to angle of emergence θ and distributes, and promptly the light intensity I of emergent light and angle of emergence θ satisfy: I=I 0Xcos θ, 0 °≤θ≤90 °; Wherein, I 0Light intensity for this led chip central axis emergent light; Angle of emergence θ is the angle of emergent light and central shaft; The central shaft of the receiving space of this body and the central shaft of this led chip are on same straight line, and the degree of depth of this receiving space also is lambertian distribution with respect to angle of emergence θ.
3. light-emitting diode as claimed in claim 2 is characterized in that: the shape of the shape of this light conversion body and the receiving space of this body is complementary, and the thickness of this light conversion body also is lambertian distribution with respect to angle of emergence θ.
4. light-emitting diode as claimed in claim 1 is characterized in that: the thickness of this light conversion body is less than or equal to 500 μ m.
5. light-emitting diode as claimed in claim 4 is characterized in that: the thickness of this light conversion body is less than or equal to 300 μ m.
6. light-emitting diode as claimed in claim 1 is characterized in that: also comprise a pedestal, the end face mediad lower recess of this pedestal forms an accommodation space, and this led chip is contained in this accommodation space.
7. light-emitting diode as claimed in claim 6 is characterized in that: the bottom surface of this light conversion body covers the recess of this base top surface fully.
8. light-emitting diode as claimed in claim 7 is characterized in that: this packaging body is contained in the accommodation space of this pedestal, and the end face of this packaging body flushes with the end face of this pedestal, and the end face of this packaging body is close in the bottom surface of this light conversion body.
9. light-emitting diode as claimed in claim 1 is characterized in that: this light conversion body is arranged in the receiving space of this body through the mode of spraying or silk screen printing.
10. light-emitting diode as claimed in claim 1 is characterized in that: this light conversion body comprises the matrix of a printing opacity and is distributed in the fluorescent material in this matrix that this light transformational substance is this fluorescent material.
CN2010102753515A 2010-09-07 2010-09-07 Light emitting diode Pending CN102403435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010102753515A CN102403435A (en) 2010-09-07 2010-09-07 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010102753515A CN102403435A (en) 2010-09-07 2010-09-07 Light emitting diode

Publications (1)

Publication Number Publication Date
CN102403435A true CN102403435A (en) 2012-04-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102753515A Pending CN102403435A (en) 2010-09-07 2010-09-07 Light emitting diode

Country Status (1)

Country Link
CN (1) CN102403435A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1937268A (en) * 2005-09-22 2007-03-28 三星电机株式会社 Light emitting diode package and method for manufacturing the same
US20080169480A1 (en) * 2007-01-11 2008-07-17 Visera Technologies Company Limited Optoelectronic device package and packaging method thereof
CN101369614A (en) * 2007-08-17 2009-02-18 刘胜 Packaging structure and method for high power white light LED
CN201297529Y (en) * 2008-11-15 2009-08-26 和谐光电科技(泉州)有限公司 An encapsulation structure of a white light LED
CN101577297A (en) * 2008-05-09 2009-11-11 旭丽电子(广州)有限公司 Luminous package structure and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1937268A (en) * 2005-09-22 2007-03-28 三星电机株式会社 Light emitting diode package and method for manufacturing the same
US20080169480A1 (en) * 2007-01-11 2008-07-17 Visera Technologies Company Limited Optoelectronic device package and packaging method thereof
CN101369614A (en) * 2007-08-17 2009-02-18 刘胜 Packaging structure and method for high power white light LED
CN101577297A (en) * 2008-05-09 2009-11-11 旭丽电子(广州)有限公司 Luminous package structure and manufacturing method thereof
CN201297529Y (en) * 2008-11-15 2009-08-26 和谐光电科技(泉州)有限公司 An encapsulation structure of a white light LED

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Application publication date: 20120404