CN102403393A - Fabricating method for photoelectric element base - Google Patents
Fabricating method for photoelectric element base Download PDFInfo
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- CN102403393A CN102403393A CN2010102768629A CN201010276862A CN102403393A CN 102403393 A CN102403393 A CN 102403393A CN 2010102768629 A CN2010102768629 A CN 2010102768629A CN 201010276862 A CN201010276862 A CN 201010276862A CN 102403393 A CN102403393 A CN 102403393A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a fabricating method for a photoelectric element base, which comprises the steps of fabricating a support substrate, plating pins limitedly, assembling the pins and a metallic disc, injecting plastic materials in mould closing and cutting tapes. According to implementation of the steps, the support substrate with a plurality of limitedly plating pins and the metallic disc can be combined continuously by injecting the plastic materials and then properly cut so that an independent element can be acquired. The fabricating method for the photoelectric element base has the advantages of simplicity, convenience and time saving in fabrication, low cost, high yield and the like.
Description
Technical field
The invention relates to the base manufacture method of a kind of photoelectric cell, particularly photoelectric cell.
Background technology
The formation of general photoelectric cell is that a photoelectricity wafer configuration is at a base; Wherein the formation of base can be the combination of a metal disk body and complex conduction pin and ground connection guiding.
See also Fig. 1, show among the figure that the base 10 of a photoelectric cell is to get a metal disk body 11, and plural number independently pin 12 be plugged on respectively on this metal disk body 11; Then between pin 12 and metal disk body 11, insert glass material 13, and make glass material 13, pin 12 and metal disk body 11 combine through the mode of glass sintering.An other grounding pin 14 can combine with metal disk body 11 through spot welding or laser welding manner.So can make single and base independently.
Then each base 10 is put into the barrel plating groove and do full plating and handle (not shown), make the surface of metal disk body and each conductive pin and grounding pin all by gold-plated.
See also Fig. 2, the manufacture method of concluding known base is following:
Pin set is found step 22, and it mainly is that the metal disk body is combined with each pin, and inserts glass material in the gap between pin and metal disk body;
Sintering step 23 mainly is that the combination with above-mentioned metal disk body, pin and glass material is placed in the stove of high temperature, makes glass material fusion and bond disk body and each pin;
The grounding leg soldering group is found step 24, is to get a grounding pin and mat spot welding or laser welding manner to combine with the metal disk body;
Full plating step 25 is that base that metal disk body, each pin and glass material are constituted is put into the barrel plating groove and done full plating and handle, make each member the surface and plate one deck gold.
Be with through can obtain the complete gold-plated base of single independent shape and surface with upper type.
Yet this kind mode exists several inconvenience and not good shortcoming: one of which is that glass sintering needs high temperature and is heated the processing procedure time that causes needs to be grown for a long time; It two is a grounding pin with welding manner knot metal disk body, because metal disk body and pin is small-sized, because of the area that can receive the tool clamping is little, the position that puts a spot is very little, shows inconvenience so weld; It three is that the surface of whole base is all gold-plated, is need not do gold-plated processing yet the area of significant proportion is wherein arranged, and therefore causes the raising of cost; It four is that the external diameter of each pin is very thin, so rolling easily
Cause distortion in the plating process; It is five for this manufacture method is to make one by one base, so during production costs.
Summary of the invention
The object of the present invention is to provide a kind of base manufacture method of photoelectric cell, it mainly is to adopt successional combination form, and improving conventional base needs the inconvenience of making one by one and time-consuming disappearance, and grounding pin needs the disappearance of welding in addition.
Another purpose of the present invention is to provide a kind of base manufacture method of photoelectric cell, and it can limit plating, and can improve conventional base whereby needs full plating and cause expensive disappearance, solves pin simultaneously in the yielding disappearance of electroplating process.
The present invention replaces the glass sintering mode to penetrate molded mode in addition, must shorten Production Time, enhances productivity.
According to above-mentioned purpose and effect, the disclosed base manufacture method of the present invention comprises substrate holder and processes step, and metal material is made the support base material, and this support base material comprises the material bar, has many pins on the material bar; Pin limit plating step is electroplated the plating area of each support base material, and wherein this plating area is at least the end of this pin; Pin and metal disk body group are found step, and this support base material after guiding is electroplated gets into jetting mold, and the metal disk body is configured in this jetting mold, and then group is located at respectively this pin one end; Matched moulds injects the plastic material step, and behind the jetting mold matched moulds, with the plastic material injection jetting mold of fusion, and in this this metal disk body of plastic material inflow, making respectively, this pin combines with this metal disk body; And cut the strip step, and take out the combination of this metal disk body and this support base material by jetting mold, and cut and remove this material bar, this metal disk body is combined with plural pin and form independently element.
The base manufacture method of aforesaid photoelectric cell; Wherein, In the upright step of said pin and metal disk body group, more come respectively this pin and support this metal disk body of clamping with clamp tool, make an end of each pin embed this metal disk body and form the strong fix state.
The base manufacture method of aforesaid photoelectric cell, wherein, said support base material is to be formed by the sheet metal of sheet or continuous sheet metal strip punching out.
The base manufacture method of aforesaid photoelectric cell, wherein, the plating area of said each pin is less than 1/2nd of this pin length.
The base manufacture method of aforesaid photoelectric cell, wherein, the plating area of said each pin is 1mm～5mm.
The base manufacture method of aforesaid photoelectric cell, wherein, the plating area of said each pin institute electroplated metal is a gold.
The base manufacture method of aforesaid photoelectric cell, wherein, the electroplating thickness of said gold is 0.05um ~ 0.762um.
The base manufacture method of aforesaid photoelectric cell, wherein, it is plated on this plating area with gold after more being included in each pin plated with nickel.
The base manufacture method of aforesaid photoelectric cell, wherein, it more comprises with one of them pin of drift punching press, makes its end sunken in the end face of this metal disk body.
The base manufacture method of aforesaid photoelectric cell, wherein, said pin is as the usefulness of ground connection.
The base manufacture method of aforesaid photoelectric cell, wherein, said drift is the part of this mould, and when matched moulds, this pin is carried out punching press.
The base manufacture method of aforesaid photoelectric cell, wherein, said pin receives to form the riveted joint shape with said metal dish body after this drift punching press.
The base manufacture method of aforesaid photoelectric cell, wherein, the surface of said pin has first engagement formation, and this first engagement formation and plastic material can form strong bonded.
The base manufacture method of aforesaid photoelectric cell, wherein, said first engagement formation is recessed sky, flange, perforation or embossing.
The base manufacture method of aforesaid photoelectric cell, wherein, said metal disk body has second engagement formation, and this second engagement formation and plastic material formation strong bonded.
The base manufacture method of aforesaid photoelectric cell, wherein, said second engagement formation is recessed sky, flange, chamfering or bridge joint structure.
The base manufacture method of aforesaid photoelectric cell, wherein, the plastic material with fusion behind the matched moulds injects mould, and this plastic material part position is in said metal dish external bottom surface.
Simultaneously, the present invention discloses the base manufacture method of another kind of photoelectric cell, and it comprises following steps:
The metal disk body is put positioning step: the predeterminated position that the metal disk body is configured in jetting mold;
The support base material imports step: get the support base material and the guiding of having electroplated and get into this jetting mold; Wherein this support base material is a material bar, has many pins on it, and definition one plating area on each pin; And electroplate in this plating area, wherein this plating area is at least the end of this pin;
Pin and metal disk body group are found step: metal disk body group is located at respectively this pin one end, comes each pin of clamping and support this metal disk body with clamp tool in addition, make an end of each pin embed this metal disk body and form the strong fix state.
Matched moulds injects the plastic material step: behind the jetting mold matched moulds, with the plastic material injection jetting mold of fusion, and in this this metal disk body of plastic material inflow, each pin is combined with this metal disk body;
Cut the strip step: take out the combination of this metal disk body and this support base material by jetting mold, and cut and remove this material bar, this metal disk body is combined with plural pin and form independently element.
The base manufacture method of aforesaid photoelectric cell, wherein, said support base material is to be formed by the sheet metal of sheet or continuous sheet metal strip punching out.
The base manufacture method of aforesaid photoelectric cell, wherein, the plating area of said each pin is less than 1/2nd of this pin length.
The base manufacture method of aforesaid photoelectric cell, wherein, the plating area of said each pin is 1mm～5mm.
The base manufacture method of aforesaid photoelectric cell, wherein, the plating area of said each pin institute electroplated metal is a gold.
The base manufacture method of aforesaid photoelectric cell, wherein, the electroplating thickness of said gold is 0.05um ~ 0.762um.
The base manufacture method of aforesaid photoelectric cell, wherein, it is plated on this plating area with gold after more being included in said each pin plated with nickel.
The base manufacture method of aforesaid photoelectric cell, wherein, it more comprises with one of them pin of drift punching press, makes its end sunken in the end face of this metal disk body.
The base manufacture method of aforesaid photoelectric cell, wherein, said pin is as the usefulness of ground connection.
The base manufacture method of aforesaid photoelectric cell, wherein, said drift is the part of this mould, and when matched moulds, this pin is carried out punching press.
The base manufacture method of aforesaid photoelectric cell, wherein, said pin receives to form the riveted joint shape with said metal dish body after this drift punching press.
The base manufacture method of aforesaid photoelectric cell, wherein, the surface of said pin has first engagement formation, and this first engagement formation and plastic material can form strong bonded.
The base manufacture method of aforesaid photoelectric cell, wherein, said first engagement formation is recessed sky, flange, perforation or embossing.
The base manufacture method of aforesaid photoelectric cell, wherein, said metal disk body has second engagement formation, and this second engagement formation and plastic material formation strong bonded.
The base manufacture method of aforesaid photoelectric cell, wherein, said second engagement formation is recessed sky, flange, chamfering or bridge joint structure.
The base manufacture method of aforesaid photoelectric cell, wherein, the plastic material with fusion behind the matched moulds injects mould, and this plastic material part position is in this metal dish external bottom surface.
Beneficial effect of the present invention is:
Because pin and strip form tabular or banded, so help to combine with the metal disk body raising make efficiency and improve conventional base the need inconvenience of making and time-consuming disappearance one by one with successional structure;
2. because grounding pin of the present invention is formed directly on the strip, and with each pin bond disk body together, so easier on making than known welding manner;
3. the gold-plated purpose of pin is can be used as the electrode of routing, yet the required area of electrode is little, can only be that the part or even the end of pin gets final product; The disclosed tabular or banded support base material of the present invention can make pin limit plating according to the actual design demand, and known configurations then need be plated entirely, so the present invention can reduce cost; When limit plating and bond disk body, pin of the present invention is difficult for being out of shape because of stressed in addition, and when plating entirely, known pin produces distortion because of moving of base easily, so product fine rate of the present invention can improve;
4. the present invention makes the metal disk body combine pin with the mould mode of the penetrating plastic material of arranging in pairs or groups; Its molding time is short and need not use the high temperature stove and accessory; And conventional structure makes the metal disk body combine with pin with the glass sintering mode; The processing procedure time is grown and needs and could accomplish in hot environment, so the present invention can shorten processing procedure time and convenient the making.
Below enumerate preferred embodiment now, and conjunction with figs. specifies above-mentioned about disclosed purpose of the present invention and effect.
Description of drawings
Fig. 1 is the making sketch map of known base.
Fig. 2 is the making step calcspar of known base.
Fig. 3 is that support base material of the present invention is made sketch map.
Fig. 4 is a support base material limit plating sketch map of the present invention.
Fig. 5 is that metal disk body of the present invention is configured in the outside drawing on each pin.
Fig. 6 is the sketch map that metal disk body of the present invention and each pin are positioned at jetting mold.
Fig. 7 is matched moulds of the present invention and the sketch map that injects plastic material.
Fig. 8 is the making step calcspar of the embodiment of the invention one.
Fig. 9 is the making step calcspar of the embodiment of the invention two.
Figure 10 is the present invention carries out punching press to grounding pin a sketch map one.
Figure 11 is the present invention carries out punching press to grounding pin a sketch map two.
Figure 12 is the present invention carries out punching press to grounding pin a sketch map three.
Figure 13 is the present invention carries out punching press to grounding pin a sketch map four.
Figure 14 is the present invention carries out punching press to grounding pin a sketch map five.
Figure 15 is the structural representation of the present invention to grounding pin collocation extension bond disk body.
Figure 16 is the structural representation one that grounding pin of the present invention combines with plastic material.
Figure 17 is the structural representation two that grounding pin of the present invention combines with plastic material.
Figure 18 is the structural representation three that grounding pin of the present invention combines with plastic material.
Figure 19 is the structural representation four that grounding pin of the present invention combines with plastic material.
Figure 20 is the structural representation one that metal disk body of the present invention combines with plastic material.
Figure 21 is the structural representation two that metal disk body of the present invention combines with plastic material.
Figure 22 is the structural representation three that metal disk body of the present invention combines with plastic material.
Figure 23 is the structural representation four that metal disk body of the present invention combines with plastic material.
[main element symbol description]
10 bases, 11 metal disk bodies
12 pins, 13 glass materials
14 grounding pins
21 material preparation steps, 22 pin set are found step
23 sintering steps, 24 grounding pin soldering group are found step
25 full plating steps
30 support base materials, 31 metal materials
32 strips, 34 pins
35 grounding pins, 352 recessed skies
354 protuberances, 356 recesses
358 first engagement formation
36 plating areas, 38 electroplating baths
40 metal disk bodies, 402 second engagement formation
50 jetting molds
52 clamp tools, 54 plastic materials
542 extensions, 56 drifts
61 support base material punching out step 62 pins limit plating step
63 pins and metal disk body group are found step
64 matched moulds inject the plastic material step
65 cut the strip step
71 metal disk bodies are put positioning step
72 support base materials import step
80a ~ 80c drift.
Embodiment
See also Fig. 3, show the mode of making a support base material 30 among the figure, it is to get a metal material (sheet metal strip of shape or the sheet metal of sheet continuously) 31, forms many pins of tool 34 on the material bar 32 through impact style.Above-mentioned pin 34 can define a plating area 36 from free end; This plating area 36 is less than 1/2nd of pin 34 length; For example, if the length 15mm of pin 34, then plating area 36 is no more than 7.5mm; Generally speaking, according to multi-form pin 34 length and convenient execution of electroplating processing, the length of plating area 36 drops between 1mm ~ 5mm mostly.
Fig. 4 shows that support base material 30 can a relative electroplating bath 38 and the plating area 36 of each pin 34 is got in the electroplate liquids.Make plating area 36 surface attachment layer of metal whereby; The metal that is attached to plating area 36 is with Jin Weijia.Limit before the plating to plating area 36 in addition, pin 34 surfaces can plate one deck nickel in advance.And the electroplating thickness of gold is that 0.05um ~ 0.762um is a preferred range.
See also Fig. 5 and Fig. 6, get the support base material 30 that electroplating region 36 electroplated and put and put in a jetting mold 50 (see figure 6)s on the throne, and metal disk body 40 is configured in an end of each pin 34.One pin is wherein arranged as earthy, rename at this and be grounding pin 35.
Please consult Fig. 6 again, further, support base material 30 be can successional entering jetting mold 50 in; Again by each pin 34, the grounding pin 35 of this support base material 30 of suitable clamp tool 52 clampings and support this metal disk body 40; So an end of pin 34 and grounding pin 35 can embed metal disk body 40, and metal disk body 40 forms the strong fix state with each pin 34 and grounding pin 35.
See also Fig. 7, behind jetting mold 50 matched moulds, can the plastic material of fusion 54 be injected in the jetting molds 50, and plastic material 54 can flow in this metal disk body 40, each pin 34 is combined with metal disk body 40; And an end of grounding pin 35 can receive drift 56 effects of mould 50 inner faces and combine with metal disk body 40 with the formation of riveting.
Then take out the combination of metal disk body 40 and support base material 30, and cut and remove material bar 32, just can make the independently element that is combined to form of metal dish body 40 and pin 34, grounding pin 35.
According to manufacture method described above, the present invention can conclude that to comprise following steps as shown in Figure 8:
Support base material punching out step 61 is to utilize the punching out mode to obtain the combination of tabular or banded strip and many pins;
Pin limit plating step 62 is with the above-mentioned tabular or banded strip and the combination of many pins, electroplates to the plating area that pin sets.
Pin and metal disk body group are found step 63, be the support base material after the limit plating is sent in the jetting mold, and the metal disk body are configured in the precalculated position that mould is gone into, and make pin one end insert the metal disk body;
Matched moulds injects plastic material step 64, is that plastic material with fusion injects in the mould and inserts between pin and the metal disk body, and pin is combined with the metal disk body;
Cut strip step 65, be that the combination of support base material and metal disk body is taken out, and cut out the strip that removes the support base material;
So can obtain granular independent seats.The metal disk body of each base all disposes many pin and grounding pins that can be made for electrode, and the only parcel plating of each pin.
Please read Fig. 9, another implementation method of the present invention comprises a metal disk body and puts positioning step 71 in order to a metal disk body is configured in the predeterminated position of a jetting mold; An and support base material importing step 72 this jetting mold of support base material guiding entering in order to having electroplated.
After aforesaid two steps satisfy, can carry out pin and the upright step 63 of metal disk body group, matched moulds injection plastic material step 64 in regular turn and cut strip step 65 like last embodiment, to obtain granular independent seats.The metal disk body of each base all disposes many pin and grounding pins that can be made for electrode, and the only parcel plating of each pin.
In aforesaid two manufacture methods, grounding pin 35 is to receive the punching press of the drift 56 that this jetting mold 50 possesses and rivet metal disk body 40; Yet press work also can carry out punching press with suitable drift outside jetting mold 50.End face that it should be noted that grounding pin 35 is sunken in metal disk body 40 end faces, and is lower than 0.05mm～0.1mm and gets final product.
See also the 10th～12 figure, in order to improve the riveted effect of grounding pin 35 and metal disk body 40, the side of grounding pin 35 can form recessed empty 352 and in order to clamping metal disk body 20; Difference as for the 10th～12 figure is that the end face structure of drift 80a ~ 80c is different, cause drift 80a ~ 80c to act on grounding pin 35 end faces after, can form different structural forms.
Other can be in order to improve structure such as Figure 13 of grounding pin 35 and metal disk body 40 riveted effects, and its outer rim at grounding pin 35 forms protuberance 354 and bearing metal disk body 40; The drift 80a punching press of waiting acts on the end face of grounding pin 35, and then the sunken end face of grounding pin 35 is lower than metal disk body 40 end faces, and collocation protuberance 354 riveted metal disk bodies 40.
Figure 14 shows another and borrows drift 80a punching press grounding pin 35 to improve the structure of grounding pin 35 and metal disk body 40 riveted effects.The outer rim of the grounding pin 35 that do not coexist of itself and Figure 13 forms a recess 356.
See also Figure 15, the structure of another raising grounding pin 35 and metal disk body 40 riveted effects is when matched moulds injects plastic material, makes plastic material 54 part positions in these metal disk body 40 outside bottom surfaces.This kind mode can reserve the bottom of a relative metal disk body 40 in space on jetting mold, and the plastic material 54 of inserting this space forms an extension 542, and what it can be to metal disk body 40 and pin 34, grounding pin 35 combines to provide fixed effect.
See also Figure 16 to Figure 19, grounding pin 35 surfaces among the figure have first engagement formation 358, and first engagement formation 358 can form strong bonded with plastic material 54.This first engagement formation 358 is respectively recessed sky, flange, perforation and embossing according to the figure preface.
See also Figure 20 to Figure 23, the metal disk body 40 among the figure has second engagement formation 402, and second engagement formation 402 can form strong bonded with plastic material 54.This first engagement formation 358 is respectively recessed sky, flange, chamfering and bridge joint according to the figure preface.
The foregoing description is merely illustrative technology of the present invention and effect thereof, but not is used to limit the present invention.Any ripe all can be in this technological personage under the situation of the know-why of this creation and spirit, the foregoing description is made amendment and is changed, therefore rights protection scope of the present invention should be listed like claims.
Claims (33)
1. the base manufacture method of a photoelectric cell is characterized in that it comprises following steps:
Substrate holder is processed step: metal material is made the support base material, and this support base material comprises the material bar, has a plurality of pins on the material bar;
Pin limit plating step: electroplate the plating area to each support base material, and wherein this plating area is at least the end of this pin;
Pin and metal disk body group are found step: this support base material after guiding is electroplated gets into jetting mold, and the metal disk body is configured in this jetting mold, and then group is located at each pin one end;
Matched moulds injects the plastic material step: behind the jetting mold matched moulds, with the plastic material injection jetting mold of fusion, and in this this metal disk body of plastic material inflow, making respectively, this pin combines with this metal disk body;
Cut the strip step: take out the combination of this metal disk body and this support base material by jetting mold, and cut and remove this material bar, this metal disk body is combined with plural pin and form independently element.
2. the base manufacture method of photoelectric cell as claimed in claim 1; It is characterized in that; In the upright step of said pin and metal disk body group, more come respectively this pin and support this metal disk body of clamping with clamp tool, make an end of each pin embed this metal disk body and form the strong fix state.
3. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that, said support base material is to be formed by the sheet metal of sheet or continuous sheet metal strip punching out.
4. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that, the plating area of said each pin is less than 1/2nd of this pin length.
5. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that, the plating area of said each pin is 1mm～5mm.
6. like the base manufacture method of claim 1,4 or 5 described photoelectric cells, it is characterized in that the plating area institute electroplated metal of said each pin is a gold.
7. the base manufacture method of photoelectric cell as claimed in claim 6 is characterized in that, the electroplating thickness of said gold is 0.05um ~ 0.762um.
8. the base manufacture method of photoelectric cell as claimed in claim 6 is characterized in that, it is plated on this plating area with gold after more being included in each pin plated with nickel.
9. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that, it more comprises with one of them pin of drift punching press, makes its end sunken in the end face of this metal disk body.
10. the base manufacture method of photoelectric cell as claimed in claim 9 is characterized in that, said pin is as the usefulness of ground connection.
11. the base manufacture method of photoelectric cell as claimed in claim 9 is characterized in that, said drift is the part of this mould, and when matched moulds, this pin is carried out punching press.
12. the base manufacture method of photoelectric cell as claimed in claim 9 is characterized in that, said pin receives to form the riveted joint shape with said metal dish body after this drift punching press.
13. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that the surface of said pin has first engagement formation, and this first engagement formation and plastic material can form strong bonded.
14. the base manufacture method of photoelectric cell as claimed in claim 13 is characterized in that, said first engagement formation is recessed sky, flange, perforation or embossing.
15. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that, said metal disk body has second engagement formation, and this second engagement formation and plastic material formation strong bonded.
16. the base manufacture method of photoelectric cell as claimed in claim 15 is characterized in that, said second engagement formation is recessed sky, flange, chamfering or bridge joint structure.
17. the base manufacture method of photoelectric cell as claimed in claim 1 is characterized in that, the plastic material with fusion behind the matched moulds injects mould, and this plastic material part position is in said metal dish external bottom surface.
18. the base manufacture method of a photoelectric cell is characterized in that it comprises following steps:
The metal disk body is put positioning step: the predeterminated position that the metal disk body is configured in jetting mold;
The support base material imports step: get the support base material and the guiding of having electroplated and get into this jetting mold; Wherein this support base material is a material bar, has many pins on it, and definition one plating area on each pin; And electroplate in this plating area, wherein this plating area is at least the end of this pin;
Pin and metal disk body group are found step: metal disk body group is located at respectively this pin one end, comes each pin of clamping and support this metal disk body with clamp tool in addition, make an end of each pin embed this metal disk body and form the strong fix state;
Matched moulds injects the plastic material step: behind the jetting mold matched moulds, with the plastic material injection jetting mold of fusion, and in this this metal disk body of plastic material inflow, each pin is combined with this metal disk body;
Cut the strip step: take out the combination of this metal disk body and this support base material by jetting mold, and cut and remove this material bar, this metal disk body is combined with plural pin and form independently element.
19. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that, said support base material is to be formed by the sheet metal of sheet or continuous sheet metal strip punching out.
20. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that the plating area of said each pin is less than 1/2nd of this pin length.
21. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that, the plating area of said each pin is 1mm～5mm.
22. the base manufacture method like claim 18,20 or 21 described photoelectric cells is characterized in that, the plating area institute electroplated metal of said each pin is a gold.
23. the base manufacture method of photoelectric cell as claimed in claim 22 is characterized in that, the electroplating thickness of said gold is 0.05um ~ 0.762um.
24. the base manufacture method of photoelectric cell as claimed in claim 22 is characterized in that, it is plated on this plating area with gold after more being included in said each pin plated with nickel.
25. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that, it more comprises with one of them pin of drift punching press, makes its end sunken in the end face of this metal disk body.
26. the base manufacture method of photoelectric cell as claimed in claim 25 is characterized in that said pin is as the usefulness of ground connection.
27. the base manufacture method of photoelectric cell as claimed in claim 25 is characterized in that, said drift is the part of this mould, and when matched moulds, this pin is carried out punching press.
28. the base manufacture method of photoelectric cell as claimed in claim 25 is characterized in that, said pin receives to form the riveted joint shape with said metal dish body after this drift punching press.
29. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that the surface of said pin has first engagement formation, and this first engagement formation and plastic material can form strong bonded.
30. the base manufacture method of photoelectric cell as claimed in claim 29 is characterized in that, said first engagement formation is recessed sky, flange, perforation or embossing.
31. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that, said metal disk body has second engagement formation, and this second engagement formation and plastic material formation strong bonded.
32. the base manufacture method of photoelectric cell as claimed in claim 31 is characterized in that, said second engagement formation is recessed sky, flange, chamfering or bridge joint structure.
33. the base manufacture method of photoelectric cell as claimed in claim 18 is characterized in that, the plastic material with fusion behind the matched moulds injects mould, and this plastic material part position is in this metal dish external bottom surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010276862.9A CN102403393B (en) | 2010-09-09 | 2010-09-09 | Fabricating method for photoelectric element base |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010276862.9A CN102403393B (en) | 2010-09-09 | 2010-09-09 | Fabricating method for photoelectric element base |
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| CN102403393A true CN102403393A (en) | 2012-04-04 |
| CN102403393B CN102403393B (en) | 2014-12-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112277241A (en) * | 2019-07-23 | 2021-01-29 | 江苏易感素智能科技有限公司 | Manufacturing method of medical NTC temperature sensor structure |
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| US5252856A (en) * | 1990-09-26 | 1993-10-12 | Nec Corporation | Optical semiconductor device |
| US5814871A (en) * | 1996-08-15 | 1998-09-29 | Fujitsu Ltd. | Optical semiconductor assembly having a conductive float pad |
| CN101303980A (en) * | 2007-05-10 | 2008-11-12 | 一诠精密工业股份有限公司 | Surface adhesion type diode support and method for manufacturing the same |
| CN101419962A (en) * | 2007-10-24 | 2009-04-29 | 张守仁 | LED, production method therefore and illuminator manufactured by the LED |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252856A (en) * | 1990-09-26 | 1993-10-12 | Nec Corporation | Optical semiconductor device |
| US5814871A (en) * | 1996-08-15 | 1998-09-29 | Fujitsu Ltd. | Optical semiconductor assembly having a conductive float pad |
| CN101303980A (en) * | 2007-05-10 | 2008-11-12 | 一诠精密工业股份有限公司 | Surface adhesion type diode support and method for manufacturing the same |
| CN101419962A (en) * | 2007-10-24 | 2009-04-29 | 张守仁 | LED, production method therefore and illuminator manufactured by the LED |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112277241A (en) * | 2019-07-23 | 2021-01-29 | 江苏易感素智能科技有限公司 | Manufacturing method of medical NTC temperature sensor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102403393B (en) | 2014-12-17 |
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