CN102403220A - 一种SiCN扩散阻挡层制备工艺 - Google Patents
一种SiCN扩散阻挡层制备工艺 Download PDFInfo
- Publication number
- CN102403220A CN102403220A CN201010285729XA CN201010285729A CN102403220A CN 102403220 A CN102403220 A CN 102403220A CN 201010285729X A CN201010285729X A CN 201010285729XA CN 201010285729 A CN201010285729 A CN 201010285729A CN 102403220 A CN102403220 A CN 102403220A
- Authority
- CN
- China
- Prior art keywords
- sicn
- impervious layer
- diffusion impervious
- barrier layer
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 230000004888 barrier function Effects 0.000 title abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims abstract description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000077 silane Inorganic materials 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims description 16
- 229940094989 trimethylsilane Drugs 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010285729XA CN102403220A (zh) | 2010-09-17 | 2010-09-17 | 一种SiCN扩散阻挡层制备工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010285729XA CN102403220A (zh) | 2010-09-17 | 2010-09-17 | 一种SiCN扩散阻挡层制备工艺 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102403220A true CN102403220A (zh) | 2012-04-04 |
Family
ID=45885300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010285729XA Pending CN102403220A (zh) | 2010-09-17 | 2010-09-17 | 一种SiCN扩散阻挡层制备工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102403220A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115679265A (zh) * | 2021-07-22 | 2023-02-03 | 纳米及先进材料研发院有限公司 | 复合涂层及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020027286A1 (en) * | 1999-09-30 | 2002-03-07 | Srinivasan Sundararajan | Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications |
US20030228750A1 (en) * | 2002-06-07 | 2003-12-11 | Shyh-Dar Lee | Method for improving adhesion of a low k dielectric to a barrier layer |
CN101388359A (zh) * | 2004-04-19 | 2009-03-18 | 应用材料公司 | 改善低k电介质对导电材料粘附性的方法 |
-
2010
- 2010-09-17 CN CN201010285729XA patent/CN102403220A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020027286A1 (en) * | 1999-09-30 | 2002-03-07 | Srinivasan Sundararajan | Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications |
US20030228750A1 (en) * | 2002-06-07 | 2003-12-11 | Shyh-Dar Lee | Method for improving adhesion of a low k dielectric to a barrier layer |
CN101388359A (zh) * | 2004-04-19 | 2009-03-18 | 应用材料公司 | 改善低k电介质对导电材料粘附性的方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115679265A (zh) * | 2021-07-22 | 2023-02-03 | 纳米及先进材料研发院有限公司 | 复合涂层及其制备方法 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130620 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130620 |
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Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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Effective date of registration: 20130620 Address after: 100176 No. 18 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20120404 |