CN102403207B - A kind of polycrystalline silicon laser annealing method for thin film transistor (TFT) - Google Patents
A kind of polycrystalline silicon laser annealing method for thin film transistor (TFT) Download PDFInfo
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- CN102403207B CN102403207B CN201110328744.2A CN201110328744A CN102403207B CN 102403207 B CN102403207 B CN 102403207B CN 201110328744 A CN201110328744 A CN 201110328744A CN 102403207 B CN102403207 B CN 102403207B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 238000005224 laser annealing Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- 238000013519 translation Methods 0.000 claims abstract description 14
- 239000012528 membrane Substances 0.000 claims abstract description 13
- 210000004877 mucosa Anatomy 0.000 claims abstract description 5
- 230000003068 static effect Effects 0.000 claims description 4
- 230000001788 irregular Effects 0.000 abstract description 2
- 230000014616 translation Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005499 laser crystallization Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention relates to a kind of polycrystalline silicon laser annealing method for thin film transistor (TFT), it comprises the following steps: that 1. provide a substrate, forms an amorphous silicon membrane on this substrate; 2. a PRK generator is provided, and it can launch pulse laser beam, and this pulse laser beam irradiates this amorphous silicon membrane and forms an irradiation area, makes this irradiation area in molten condition; 3. substrate translation one scan spacing, excimer laser penetrates a pulse laser beam again, and this sweep span changes within the scope of 0.8～1.2 times of average sweep span, and the sweep span difference of twice of front and back is within the scope of 0.1 times of average sweep span; 4. repeating step 3, until complete the Ear Mucosa Treated by He Ne Laser Irradiation of whole substrate. Sweep span changes within the scope of 0.8～1.2 times of average sweep span, and front and back difference is within the scope of 0.1 times of mean value, the demonstration that had so both suppressed easy generation in quasi-molecule laser annealing technique is irregular, can not cause again the difference of tft characteristics excessive, thereby promote display quality.
Description
Technical field
The present invention relates to a kind of preparation method for thin film transistor (TFT), relate in particular to the method for quasi-molecule laser annealing in a kind of low-temperature polysilicon film transistor preparation technology.
Background technology
In OLED, all need deploy switch to drive, the configuration of these switches can be divided into active matrix and the large type of passive matrix type two, due to the configuration mode of active matrix has can continuous luminous and the advantage such as low voltage drive, so this kind of configuration mode is applied in OLED significantly in recent years. In the OLED of active matrix, its switch can be thin film transistor (TFT) (thinfilmtransistor, be called for short TFT) or thin film diode etc., with thin film transistor (TFT), can be divided into non-crystalline silicon (amorphoussilicon according to the material of channel region again, be called for short a-Si) thin film transistor (TFT) and polysilicon (poly-silocon) thin film transistor (TFT), because polycrystalline SiTFT is little and electron mobility is large compared to its consumed power of amorphous silicon film transistor, be therefore subject to gradually the attention in market.
The process temperatures of early stage polycrystalline SiTFT is up to 1000 degree Celsius, therefore the selection of substrate material is significantly limited, but, the recent development due to laser technology, process temperatures can be down to below 600 degree Celsius, low temperature polycrystalline silicon (lowtemperaturepoly-silicon, referred to as the LTPS) thin film transistor (TFT) and the polycrystalline SiTFT that utilizes this kind of processing procedure mode gained is otherwise known as. Mostly adopt at present the method for quasi-molecule laser annealing (excimerlaserannealing is called for short ELA) to carry out crystallization.
Fig. 1 is the schematic diagram of current laser crystallization. Excimer laser 2 inspires pulse laser beam 3, when laser beam 3 arrives on amorphous silicon film 5 through regulating, and amorphous silicon film 5 absorbing laser energy, moment reaches the high temperature melting of 1700 DEG C, then in cooling procedure, re-starts crystallization. Laser beam 3 width w are approximately 400 μ m. While carrying out laser crystallization, laser beam 3 maintains static, substrate 1 translation; Or regulate laser beam 3 translations, substrate 1 maintains static, between every two laser pulses, the distance of substrate translation or laser beam translation is called sweep span (scanpitch), in Fig. 1, L1 is sweep span, each sweep span is identical, general sweep span at 10 μ m between 20 μ m. As shown in Figure 2, the region of the region of next pulse light beam irradiates and a upper pulse irradiation has 95%～97.5% overlapping (overlap), will make like this region by Continuous irradiation 20～40 times. When laser crystallization, different sweep spans can cause the irradiated number of times difference of substrate regions, and different irradiation number of times can cause grain size difference, and in addition, grain size also changes with the difference of pulsed laser energy.
When the method for use quasi-molecule laser annealing (ELA) is carried out crystallization, OLED (OLED) panel may produce strip and show uneven (shotmura), and this is mainly because the energy variation of each laser pulse causes. The variation of pulsed laser energy is between 1%～2%, different pulsed laser energies can make the grain size difference after crystallization, and grain size difference can cause the electrology characteristic difference of TFT, comprise mobility (mobility) and threshold voltage (Vth).
As shown in Figure 3, when scanning direction is during perpendicular to holding wire Vdd, in Fig. 3, VddB, VddG and VddR are holding wire, if mobility and the threshold voltage of TFT on the mobility of same Vdd line upper film transistor (TFT) and threshold voltage and adjacent Vdd line, can be different due to the difference of pulsed laser energy, thereby cause the pixel luminosity difference on two signal line Vdd lines, this difference will be considered to a wire that is parallel to holding wire Vdd and show uneven (linemura or shotmura).
As shown in Figure 4, if scanning direction is parallel to Vdd line, in Fig. 4, VddB, VddG and VddR are holding wire, so perpendicular to can be because the difference of pulsed laser energy causes its mobility different with threshold voltage between a line driving transistors of Vdd line and adjacent a line driving transistors, thereby cause the luminosity difference of adjacent two row pixels, this difference will be considered to a wire perpendicular to holding wire and show uneven (linemura or shotmura).
Whether the difference of brightness can be considered to a wire and show that uneven (linemura or shotmura) determined by the difference of gray scale. If in the situation of 256 GTGs, the difference of two GTGs will be considered to a wire and show uneven. Substantially the demonstration inequality producing in a lot of quasi-molecule laser annealings (ELA) is all because this small difference in brightness causes.
Summary of the invention
Show uneven problem in order to solve OLED (OLED) the panel strip occurring in quasi-molecule laser annealing method in current low temperature polycrystalline silicon preparation technology, be necessary to provide one can suppress demonstration irregular, do not affect again the low temperature polycrystalline silicon laser anneal method of other characteristics of thin film transistor (TFT).
The invention provides a kind of polycrystalline silicon laser annealing method for thin film transistor (TFT), it comprises the following steps: that 1. provide a substrate, forms an amorphous silicon membrane on this substrate; 2. a PRK generator is provided, and it can launch pulse laser beam, and this pulse laser beam irradiates this amorphous silicon membrane and forms an irradiation area, makes this irradiation area in molten condition; 3. substrate translation one scan spacing, excimer laser penetrates a pulse laser beam again, and this sweep span changes within the scope of 0.8～1.2 times of average sweep span, and the sweep span difference of twice of front and back is average sweep span 0.1 times; 4. repeating step 3, until complete the Ear Mucosa Treated by He Ne Laser Irradiation of whole substrate.
Compared with prior art, laser anneal method provided by the invention, make spacing randomly changing within the scope of 0.8～1.2 times of average sweep span of each laser scanning, and the changing value of controlling twice sweep spacing is no more than 0.1 times of average sweep span, this has just been avoided a certain region relatively too much by the number of times of Ear Mucosa Treated by He Ne Laser Irradiation, and cause grain size difference, cause the property difference of thin film transistor (TFT) to become large, and adjacent like this pixel intensity differs ± and 1 GTG and random distribution, just cannot be identified as a wire and show uneven. This is that people's eyes will be very responsive because if background luminance is very even, easily identifies little difference;
And if background luminance random a having ± 1 GTG difference just can suppress the ELAShotmura that major part can be told.
Brief description of the drawings
Fig. 1 is the schematic diagram of current Excimer-Laser Crystallization.
Fig. 2 scans the schematic diagram of overlapping region and sweep span while being current laser scanning.
Fig. 3 is the parallel schematic diagram with holding wire of laser scanning direction.
Fig. 4 is the schematic diagram of the vertical and holding wire of laser scanning direction.
Fig. 5 is the schematic diagram of PRK scanning in the present invention.
Fig. 6 is the schematic diagram of surface sweeping spacing when laser pulses irradiate in the present invention.
Detailed description of the invention
In order to express better thought of the present invention, illustrate below in conjunction with Fig. 5 and Fig. 6.
Embodiment mono-
The laser anneal method of this low temperature polycrystalline silicon, it comprises following four steps:
1. a substrate 1 is provided, adopts the method for low-pressure chemical vapor deposition (CVD) on this substrate 1, first to form a cushion 4, then deposit an amorphous silicon membrane 5.
This substrate 1 is glass substrate, this cushion 4 is structures of silica and the common composition of silicon nitride, to prevent that the impurity in substrate 1 from spreading and affecting polysilicon membrane in subsequent technique, cushion 4 and amorphous silicon membrane 5 adopt the method for chemical vapour deposition (CVD) to make.
2. a PRK generator 2 is provided, and it can launch pulse laser beam 3, and this pulse laser beam 3 irradiates this amorphous silicon membrane 5 and forms an irradiation area, makes this irradiation area in molten condition;
After amorphous silicon membrane 5 deposits on glass substrate 1, after dehydrogenation, use excimer laser beam 3 to irradiate under the energy density of optimizing, dehydrogenation is to contain hydrogen molecule impurity in order to remove non-crystalline silicon the inside, prevents from causing the quick-fried phenomenon of hydrogen. The 2 li of pulse laser beam sending 3 wavelength of this excimer laser are 308nm, and width is 400um. This pulse laser beam 3 be by chlorination xenon (XeCl) molecule be stimulated form, also can be argon fluoride (ArF), the formation that is stimulated of KrF (KrF) or xenon fluoride (XeF) equimolecular, the wavelength of these mixtures is all applicable to the crystallization of silicon very much. Pulse laser beam 3 is radiated on amorphous silicon membrane 5, and due to the extremely strong uv absorption capacity of silicon, film surface absorbs large energy, and within the extremely short time, (approximately 30～150ns) makes non-crystalline silicon melting crystal become polysilicon membrane.
3. substrate 1 translation one slight distance, excimer laser 2 penetrates a pulse laser beam 3 again, substrate 1 is irradiated, this slight distance is sweep span, as shown in L1～L8 in Fig. 5, this sweep span is change at random, on-fixed value, within the scope of 0.8～1.2 times of average sweep span, change, and control sweep span next time and last sweep span difference and be no more than 0.1 times of average sweep span. If sweep span is average sweep span for the first time, setting value is 20um, in Fig. 5 shown in L1,, each sweep span changes within the scope of 16um～24um, the front sweep span of rear single pass gap ratio increases or minimizing is no more than 2um, and in Fig. 6, the value of sweep span L2～L8 can be as shown in the table:
| Sweep span | L1 | L2 | L3 | L4 | L5 | L6 | L7 | L8 |
| Length (um) | 20 | 18 | 20 | 22 | 24 | 22 | 21 | 19 |
4. repeating step 3, until complete the Ear Mucosa Treated by He Ne Laser Irradiation of whole substrate. Excimer laser 2 is constantly launched laser beam 3, all translation one slight distance of substrate 1 when each irradiation, this slight distance is change at random within the scope of 0.8～1.2 times of average sweep span, and controls sweep span next time and last sweep span variation and be no more than 0.1 times of average sweep span. After the irradiation of several times, complete the laser crystallization process of whole glass substrate 1, non-crystalline silicon substrate transfer is become to polycrystalline silicon substrate.
Embodiment bis-
The difference of the present embodiment and embodiment mono-is that described sweep span changes within the scope of 0.9～1.1 times of average sweep span, and other are identical with embodiment.
If sweep span changes within the scope of 0.9～1.1 times of average sweep span, and control sweep span next time and last sweep span variation and be no more than 0.1 times of average sweep span. Suppose that average sweep span is 20um, the sweep span value of 1st～8 times is 20um, 19um, 20um, 18um, 20um, 21um, 22um, 20um.
In above embodiment, sweep span only may occur, also likely produce other numerical value, change within the scope of 0.8～1.2 times of average sweep span of setting as long as meet sweep span, and control sweep span next time and last sweep span difference and be no more than 0.1 times of average sweep span.
The present invention suppresses shotmura by random change sweep span.
Random change sweep span, because grain size depends on by the number of times of laser pulses irradiate, make the grain size difference of zones of different, cause TFT characteristic difference, background luminance just can not be too even like this, the susceptibility of human eye is declined, cannot differentiate small luminance difference, wire shows uneven (shotmura). But if each sweep span is all identical, will make is had too large variation by the number of times of laser pulses irradiate, thereby causes the excessive difference of TFT characteristic, makes the Quality Down Showing Picture. Therefore, the excursion of sweep span should, in 0.1 of mean value times, so suppress the demonstration inequality of quasi-molecule laser annealing, can not cause again the difference of TFT characteristic excessive, reduces display quality.
Organic Light Emitting Diode (OLED) is deposited upon on thin film transistor (TFT) (TFT) array, form one 2.8 cun active matrix organic light-emitting diodes (AMOLED) display screen, pixel is 320X240X3, display screen is lighted, and result shows that the demonstration inequality of quasi-molecule laser annealing (ELA) is than originally there being very large weakening
The present embodiment is that the beam direction that laser instrument sends remains unchanged; glass substrate translation; randomly changing sweep span; also can keep glass substrate motionless; the laser beam translation that laser instrument sends; also can be possible also have other mode translation modes, therefore protection scope of the present invention should with claims the person of being defined be as the criterion.
Claims (6)
1. for a polycrystalline silicon laser annealing method for thin film transistor (TFT), it comprises the following steps:
(1) provide a substrate, on this substrate, form an amorphous silicon membrane;
(2) provide a PRK generator, it can launch pulse laser beam, and this pulse swashsThis amorphous silicon membrane of light beam irradiates forms an irradiation area, makes this irradiation area in moltenState;
(3) substrate is with respect to excimer laser translation one scan spacing, and excimer laser againPenetrate a pulse laser beam, this sweep span is change at random, on-fixed value, this scanning roomApart from changing within the scope of 0.8～1.2 times of average sweep span, and the scanning room of twice of front and backApart from difference within the scope of 0.1 times of average sweep span:
(4) repeating step (3), until complete the Ear Mucosa Treated by He Ne Laser Irradiation of whole substrate.
2. the polycrystalline silicon laser annealing method for thin film transistor (TFT) as claimed in claim 1,It is characterized in that: substrate translation one scan spacing in step (3), described excimer laserThe laser pulse direction of sending maintains static.
3. the polycrystalline silicon laser annealing method for thin film transistor (TFT) as claimed in claim 1,It is characterized in that: in step (3), substrate maintains static, described excimer laser adjustment swashsLight pulse direction translation one scan spacing.
4. the polycrystalline silicon laser annealing method for thin film transistor (TFT) as claimed in claim 1,It is characterized in that: sweep span described in step (3) is 0.9～1.1 of average sweep spanWithin the scope of times, change.
5. the polycrystalline silicon laser annealing method for thin film transistor (TFT) as claimed in claim 1,It is characterized in that: described in step (2), laser beam width is approximately 400 μ m.
6. the polycrystalline silicon laser annealing method for thin film transistor (TFT) as claimed in claim 1,It is characterized in that: sweep span described in step (3) is between 10 μ m～20 μ m.
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| JP6623078B2 (en) * | 2016-02-23 | 2019-12-18 | 株式会社ブイ・テクノロジー | Laser annealing method and laser annealing apparatus |
| US11232949B2 (en) * | 2018-06-28 | 2022-01-25 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display device |
| CN114678266B (en) * | 2022-03-22 | 2025-08-15 | 维信诺科技股份有限公司 | Manufacturing method of display panel and display panel |
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| JP2001201703A (en) * | 2000-01-21 | 2001-07-27 | Ricoh Co Ltd | Multi-beam recording device |
| TWI220073B (en) * | 2003-07-24 | 2004-08-01 | Au Optronics Corp | Method for manufacturing polysilicon film |
| CN1755900A (en) * | 2004-09-27 | 2006-04-05 | 北方液晶工程研究开发中心 | Preparation method of gate insulation layer of polysilicon thin-film transistor by laser-annealing |
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