CN102394637A - Anti-differential power attack ternary counter based on sense amplification logic - Google Patents
Anti-differential power attack ternary counter based on sense amplification logic Download PDFInfo
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- CN102394637A CN102394637A CN2011103058180A CN201110305818A CN102394637A CN 102394637 A CN102394637 A CN 102394637A CN 2011103058180 A CN2011103058180 A CN 2011103058180A CN 201110305818 A CN201110305818 A CN 201110305818A CN 102394637 A CN102394637 A CN 102394637A
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Abstract
The invention discloses an anti-differential power attack ternary counter based on sense amplification logic, characterized by comprising a binary logic switching circuit and a sense amplification logic switching circuit, wherein the sense amplification logic switching circuit is provided with a current compensation circuit; the binary logic switching circuit is composed of a first D flip-flop, a second D flip-flop, an NAND gate and an XNOR gate; the sense amplification logic switching circuit is composed of a first PMOS (P-channel Metal Oxide Semiconductor) FET (Field Effect Transistor), a second PMOS FET, a third PMOS FET, a first NMOS (N-channel Metal Oxide Semiconductor) FET, a second NMOS FET, a third NMOS FET and a fourth NMOS FET; and a first signal output end and a second signal output end of the sense amplification logic switching circuit are connected in parallel with the current compensation circuit. The invention has the advantages that the circuit of the ternary counter has the characteristic of constant power consumption, the ternary counter has good anti-differential power attack effect, the complexity and cost of wire connection among circuits are greatly reduced, and the reliability of the circuits is improved.
Description
Technical field
The present invention relates to a kind of three value counters, especially relate to a kind of three value counters that amplify the resisting differential energy attack of logic based on sensitivity.
Background technology
Since the Kocher of U.S. cryptology institute in 1998 proposes the notion of lie attack
[1],, in every field, caused widely and paid close attention to as a hot research direction.Conventional cipher is attacked and is used mathematical analysis method to disclose the weakness of AES.This just requires the assailant must quite high attainments arranged aspect cryptanalysis and the AES.Lie is attacked and only is to use information attack encryption chips such as some marginal information, output when for example power consumption, time of implementation, fault and input behavior, radiation, electric power spike situation, and it does not require that the assailant is proficient in cryptanalysis and AES.This just causes very big threat to chip safety.The lie attack method comprise differential power attack (Differential Power Analysis, DPA)
[2], mistake attack (Fault Attacks, FA)
[3]Attack with electromagnetic wave (Electromagnetic Attacks, EMA)
[4]Or the like.Wherein, DPA attack be a kind of efficiently, lie attack method cheaply, the safety to crypto chip constitutes significant threat.The basic principle that DPA attacks is: when chip was being carried out different instructions and carried out various computing, corresponding power consumption is respective change also.Through using special electronic gauge and mathematical statistics technology, detect and analyze these and change, thereby obtain the specific key message in the chip.This is the method that a kind of change of power consumption of utilizing instruction is analyzed cryptographic algorithm and password
[5]In the existing literature about the circuit structure of resisting differential energy attack; Amplify logic SABL (Sense Amplifier Based Logic) circuit, fluctuation attitude differential logic WDDL (Wave Dynamic Differential Logic) circuit etc. such as sensitivity, but the contained information density of its power hungry of these circuit and hardware circuit reduces by 50%.And MULTI-VALUED LOGIC CIRCUIT can not only increase the ability that single line carries information, improves the information density of digital circuit, and can reduce the VLSI pin count, reduces wiring connects between circuit complexity and cost, improves the reliability of circuit.Therefore, design many-valued anti-DPA attack circuit unit and become the new research direction of scholar.
Summary of the invention
Technical problem to be solved by this invention provides and a kind ofly can reduce complexity and the cost that wiring between circuit connects, improve circuit reliability amplify three value counters of the resisting differential energy attack of logic based on sensitivity.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of three value counters that amplify the resisting differential energy attack of logic based on sensitivity; It comprises a two-valued function change-over circuit and the sensitive logical transition circuit that amplifies; The described sensitive logical transition circuit that amplifies is provided with current compensation circuit; Described two-valued function change-over circuit is made up of first d type flip flop, second d type flip flop, NAND gate and biconditional gate; The first input end of the first input end of described first d type flip flop and described second d type flip flop is connected to clock signal input terminal; The positive output end of described first d type flip flop is connected with two inputs of described NAND gate respectively with the positive output end of described second d type flip flop; The reversed-phase output of described first d type flip flop is connected with two inputs of described biconditional gate respectively with the reversed-phase output of described second d type flip flop; Second input of described first d type flip flop is connected with the output of described NAND gate; Second input of described second d type flip flop is connected with the positive output end of described first d type flip flop; Described sensitive amplify the logical transition circuit by a PMOS manage, the 2nd PMOS pipe, the 3rd PMOS pipe, NMOS pipe, the 2nd NMOS pipe, the 3rd NMOS pipe and the 4th NMOS manage and form; The source electrode of described PMOS pipe connects power supply; The source electrode of the source electrode of the drain electrode of described PMOS pipe and described the 2nd PMOS pipe and described the 3rd PMOS pipe also connects, and the drain electrode of described the 2nd PMOS pipe is connected with the drain electrode of described the 2nd NMOS pipe, and the drain electrode of described the 3rd PMOS pipe is connected with the drain electrode of described the 3rd NMOS pipe; The drain electrode of the source electrode of the source electrode of described the 2nd NMOS pipe and described the 3rd NMOS pipe and described NMOS pipe also connects; The source ground of described NMOS pipe, described the 4th NMOS pipe are connected across in the drain electrode of drain electrode and described the 3rd NMOS pipe of described the 2nd NMOS pipe, and the grid of the grid of described PMOS pipe, described NMOS pipe and the grid of described the 4th NMOS pipe are connected to the inversion clock signal input part; The drain electrode of the grid of described the 3rd PMOS pipe and described the 2nd PMOS pipe is connected to first signal output part; The drain electrode of the grid of described the 2nd PMOS pipe and described the 3rd PMOS pipe is connected to the secondary signal output, and the grid of described NMOS pipe is connected with clock signal input terminal, and the grid of described the 2nd NMOS pipe is connected with the output of described NAND gate; The grid of described the 3rd NMOS pipe is connected with the output of described biconditional gate, and described first signal output part and described secondary signal output are connected to described current compensation circuit.
Described current compensation circuit by the 4th PMOS manage, the 5th PMOS pipe, the 6th PMOS pipe and the 5th NMOS pipe form; Described first signal output part and described secondary signal output are connected to the drain and gate of described the 4th PMOS pipe; Described the 4th PMOS pipe source electrode is connected with the drain electrode of described the 5th PMOS pipe; The source electrode of the source electrode of described the 5th PMOS pipe and described the 6th PMOS pipe is connected to power supply; The drain electrode of the grid of described the 6th PMOS pipe and drain electrode and described the 5th NMOS pipe is connected to the grid of described the 5th PMOS pipe, the grid and the source ground of described the 5th NMOS pipe.
Compared with prior art; The invention has the advantages that and utilize binary-coding and the sensitive logic pre-charging stage capacitive coupling characteristic of amplifying; Designed a kind of three value counters, this scheme only need use a sensitive two-valued function change-over circuit that amplifies logical transition circuit and corresponding conventional two-value components and parts formation just can realize the function of three value counters, and through a current compensation circuit is set; Make the circuit of three value counters of the present invention have the constant characteristic of power consumption; Not only have good resisting differential energy attack effect, and the complexity that wiring connects between circuit and all reductions greatly of cost, the reliability of raising circuit; Also can the cascade of multidigit counter unit be obtained three value counters of position arbitrarily simultaneously.
Description of drawings
Fig. 1 is the structural representation and the circuit symbol sketch map of the present invention's three value counters;
Fig. 2 is the sensitive structural representation that amplifies the logical transition circuit of the present invention;
Fig. 3 is the structural representation of two-valued function change-over circuit of the present invention;
Fig. 4 is the structural representation of current compensation circuit of the present invention;
Fig. 5 is the structural representation of three three value counters being made up of three value counters of the present invention;
Fig. 6 is the computer simulation waveform sketch map of three three value counters;
Fig. 7 is the sketch map of the current waveform of three three value counters in a count cycle;
Fig. 8 is the power consumption waveform sketch map of three three value counters.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Like Fig. 1～shown in Figure 4; A kind of three value counters that amplify the resisting differential energy attack of logic based on sensitivity; It comprises a two-valued function change-over circuit 1 and the sensitive logical transition circuit 2 that amplifies; The sensitive logical transition circuit 2 that amplifies is provided with current compensation circuit 3; Two-valued function change-over circuit 1 is made up of the first d type flip flop D1, the second d type flip flop D2, NAND gate T1 and biconditional gate T2; The first input end 2D of the first input end 1D of the first d type flip flop D1 and the second d type flip flop D2 is connected to clock signal input terminal clk; The positive output end of the first d type flip flop D1 is connected with two inputs of NAND gate T1 respectively with the positive output end of the second d type flip flop D2; The reversed-phase output of the first d type flip flop D1 is connected with two inputs of biconditional gate T2 respectively with the reversed-phase output of the second d type flip flop D2, and the second input 1C of the first d type flip flop D1 is connected with the output of NAND gate T1, and the second input 2C of the second d type flip flop D2 is connected with the positive output end of the first d type flip flop D1; The sensitive logical transition circuit 2 that amplifies is made up of PMOS pipe P1, the 2nd PMOS pipe P2, the 3rd PMOS pipe P3, NMOS pipe N1, the 2nd NMOS pipe N2, the 3rd NMOS pipe N3 and the 4th NMOS pipe N4; The source electrode of the one PMOS pipe P1 connects power supply, and the source electrode of the drain electrode of PMOS pipe P1 and the 2nd PMOS pipe P2 and the source electrode of the 3rd PMOS pipe P3 also connect, and the drain electrode of the 2nd PMOS pipe P2 is connected with the drain electrode of the 2nd NMOS pipe N2; The drain electrode of the 3rd PMOS pipe P3 is connected with the drain electrode of the 3rd NMOS pipe N3; The drain electrode of source electrode that the source electrode of the 2nd NMOS pipe N2 and the 3rd NMOS manage N3 and NMOS pipe N1 also connects, and drain electrode and the 3rd NMOS that the source ground of NMOS pipe N1, the 4th NMOS pipe N4 are connected across the 2nd NMOS pipe N2 manage in the drain electrode of N3; The grid of the grid of the grid of the one PMOS pipe P1, NMOS pipe N1 and the 4th NMOS pipe N4 is connected to inversion clock signal input part clk; The drain electrode of the grid of the 3rd PMOS pipe P3 and the 2nd PMOS pipe P2 is connected to the first signal output part Vout, and the drain electrode of the grid of the 2nd PMOS pipe P2 and the 3rd PMOS pipe P3 is connected to secondary signal output CP, and the grid of NMOS pipe N1 is connected with clock signal input terminal clk; The grid of the 2nd NMOS pipe N2 is connected with the output of NAND gate T1; The grid of the 3rd NMOS pipe N3 is connected with the output of biconditional gate T2, and current compensation circuit 3 is made up of the 4th PMOS pipe P4, the 5th PMOS pipe P5, the 6th PMOS pipe P6 and the 5th NMOS pipe N5, and the 4th PMOS pipe P4 source electrode is connected with the drain electrode of the 5th PMOS pipe P5; The source electrode of the source electrode of the 5th PMOS pipe P5 and the 6th PMOS pipe P6 is connected to power supply; The drain electrode of the grid of the 6th PMOS pipe P6 and drain electrode and the 5th NMOS pipe N5 is connected to the grid of the 5th PMOS pipe P5, grid and the source ground of the 5th NMOS pipe N5, and the first signal output part Vout and secondary signal output CP are connected to the drain and gate of the 4th PMOS pipe P4.
Fig. 5 has provided the structural representation of three three value counters that utilize three value counters formation of the present invention.
Under the CANDANCE environment, adopt the 0.13 μ m CMOS technology of TSMC, three three value counters are carried out computer simulation.Fig. 6 has provided the analog waveform of three three value counters.Clk is a clock signal, V
Out0, V
Out1, V
Out2Represent first in counter, second and tertiary output respectively, output logic 0, logical one and logic 2 successively under clock control.Analog result shows that output waveform is more satisfactory, and counter has correct logic functions.
Fig. 7 is the current waveforms of three three value counters in a count cycle, and main electric current occurs on the counting edge, and size of current is basic identical.
Fig. 8 is the power consumption waveform of three three value counters, and in each clock cycle, the power consumption curve is all the same, has the constant characteristic of power consumption.
Claims (2)
1. three value counters that amplify the resisting differential energy attack of logic based on sensitivity; It is characterized in that it comprises a two-valued function change-over circuit and the sensitive logical transition circuit that amplifies; The described sensitive logical transition circuit that amplifies is provided with current compensation circuit; Described two-valued function change-over circuit is made up of first d type flip flop, second d type flip flop, NAND gate and biconditional gate; The first input end of the first input end of described first d type flip flop and described second d type flip flop is connected to clock signal input terminal; The positive output end of described first d type flip flop is connected with two inputs of described NAND gate respectively with the positive output end of described second d type flip flop; The reversed-phase output of described first d type flip flop is connected with two inputs of described biconditional gate respectively with the reversed-phase output of described second d type flip flop; Second input of described first d type flip flop is connected with the output of described NAND gate; Second input of described second d type flip flop is connected with the positive output end of described first d type flip flop; Described sensitive amplify the logical transition circuit by a PMOS manage, the 2nd PMOS pipe, the 3rd PMOS pipe, NMOS pipe, the 2nd NMOS pipe, the 3rd NMOS pipe and the 4th NMOS manage and form; The source electrode of described PMOS pipe connects power supply; The source electrode of the source electrode of the drain electrode of described PMOS pipe and described the 2nd PMOS pipe and described the 3rd PMOS pipe also connects, and the drain electrode of described the 2nd PMOS pipe is connected with the drain electrode of described the 2nd NMOS pipe, and the drain electrode of described the 3rd PMOS pipe is connected with the drain electrode of described the 3rd NMOS pipe; The drain electrode of the source electrode of the source electrode of described the 2nd NMOS pipe and described the 3rd NMOS pipe and described NMOS pipe also connects; The source ground of described NMOS pipe, described the 4th NMOS pipe are connected across in the drain electrode of drain electrode and described the 3rd NMOS pipe of described the 2nd NMOS pipe, and the grid of the grid of described PMOS pipe, described NMOS pipe and the grid of described the 4th NMOS pipe are connected to the inversion clock signal input part; The drain electrode of the grid of described the 3rd PMOS pipe and described the 2nd PMOS pipe is connected to first signal output part; The drain electrode of the grid of described the 2nd PMOS pipe and described the 3rd PMOS pipe is connected to the secondary signal output, and the grid of described NMOS pipe is connected with clock signal input terminal, and the grid of described the 2nd NMOS pipe is connected with the output of described NAND gate; The grid of described the 3rd NMOS pipe is connected with the output of described biconditional gate, and described first signal output part and described secondary signal output are connected to described current compensation circuit.
2. three value counters of the resisting differential energy attack based on the SABL logic as claimed in claim 1; It is characterized in that described current compensation circuit by the 4th PMOS manage, the 5th PMOS pipe, the 6th PMOS pipe and the 5th NMOS pipe form; Described first signal output part and described secondary signal output are connected to the drain and gate of described the 4th PMOS pipe; Described the 4th PMOS pipe source electrode is connected with the drain electrode of described the 5th PMOS pipe; The source electrode of the source electrode of described the 5th PMOS pipe and described the 6th PMOS pipe is connected to power supply; The drain electrode of the grid of described the 6th PMOS pipe and drain electrode and described the 5th NMOS pipe is connected to the grid of described the 5th PMOS pipe, the grid and the source ground of described the 5th NMOS pipe.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110305818.0A CN102394637B (en) | 2011-10-11 | 2011-10-11 | Anti-differential power attack ternary counter based on sense amplification logic |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110305818.0A CN102394637B (en) | 2011-10-11 | 2011-10-11 | Anti-differential power attack ternary counter based on sense amplification logic |
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| CN102394637A true CN102394637A (en) | 2012-03-28 |
| CN102394637B CN102394637B (en) | 2014-06-25 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595371A (en) * | 2013-10-25 | 2014-02-19 | 宁波大学 | Double-edge D flip-flop based on N type SABL logic |
| CN107682006A (en) * | 2017-09-28 | 2018-02-09 | 宁波大学 | A kind of three value forward-backward counters using carbon nano field-effect transistor |
| CN108446556A (en) * | 2018-03-01 | 2018-08-24 | 北京智芯微电子科技有限公司 | The anti-power consumption analysis circuit and method of crypto chip |
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| JP2000090668A (en) * | 1998-09-07 | 2000-03-31 | Texas Instr Inc <Ti> | Semiconductor memory circuit |
| CN101777139A (en) * | 2009-12-30 | 2010-07-14 | 宁波大学 | Multiple-valued counter unit based on nerve MOS tube and multi-digit multiple-valued counter |
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2011
- 2011-10-11 CN CN201110305818.0A patent/CN102394637B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000090668A (en) * | 1998-09-07 | 2000-03-31 | Texas Instr Inc <Ti> | Semiconductor memory circuit |
| CN101777139A (en) * | 2009-12-30 | 2010-07-14 | 宁波大学 | Multiple-valued counter unit based on nerve MOS tube and multi-digit multiple-valued counter |
Non-Patent Citations (2)
| Title |
|---|
| MASSIMO ALIOTO 等: "A General Power Model of Differential Power Analysis Attacks to Static Logic Circuits", 《IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION(VLSI)SYSTEMS》 * |
| 高宁 等: "一种新型灵敏放大器的设计", 《电子与封装》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595371A (en) * | 2013-10-25 | 2014-02-19 | 宁波大学 | Double-edge D flip-flop based on N type SABL logic |
| CN103595371B (en) * | 2013-10-25 | 2015-09-30 | 宁波大学 | A kind of Double-edge D trigger based on N-type SABL logic |
| CN107682006A (en) * | 2017-09-28 | 2018-02-09 | 宁波大学 | A kind of three value forward-backward counters using carbon nano field-effect transistor |
| CN107682006B (en) * | 2017-09-28 | 2020-11-10 | 宁波大学 | Three-value reversible counter using carbon nano field effect transistor |
| CN108446556A (en) * | 2018-03-01 | 2018-08-24 | 北京智芯微电子科技有限公司 | The anti-power consumption analysis circuit and method of crypto chip |
| CN108446556B (en) * | 2018-03-01 | 2020-04-07 | 北京智芯微电子科技有限公司 | Power consumption resisting analysis circuit and method for cryptographic chip |
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| CN102394637B (en) | 2014-06-25 |
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