CN102386292B - III-group nitride-based luminous device capable of improving light extraction efficiency and manufacture method thereof - Google Patents
III-group nitride-based luminous device capable of improving light extraction efficiency and manufacture method thereof Download PDFInfo
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- CN102386292B CN102386292B CN 201010272990 CN201010272990A CN102386292B CN 102386292 B CN102386292 B CN 102386292B CN 201010272990 CN201010272990 CN 201010272990 CN 201010272990 A CN201010272990 A CN 201010272990A CN 102386292 B CN102386292 B CN 102386292B
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000605 extraction Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims description 85
- 239000011247 coating layer Substances 0.000 claims description 75
- 229910002601 GaN Inorganic materials 0.000 claims description 47
- 230000003287 optical effect Effects 0.000 claims description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000007788 roughening Methods 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005253 cladding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 61
- 230000031700 light absorption Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention discloses a method for improving light extraction efficiency of a III-group nitride-based luminous device. A reflecting layer is formed by coarsening an n-type III-group nitride-based cladding layer or a non-mingled III-group nitride-based layer. Gaps on the coarsened surface cause occurrence of full internal reflection, so that light beams can be reflected to the upper surface of the luminous device, light extraction efficiency can be improved, and more light beams can be collected in the required direction.
Description
Technical field
The present invention relates to have promote and get the light-emitting device of optical efficiency, relate in particular to a kind of III group-III nitride based illuminating device of part alligatoring in epitaxial growth (epitaxial growth) process, as gallium nitride (GaN) light-emitting device.
Background technology
III group-III nitride base semiconductor is direct transition (direct-transition) type semiconductor, when being used in light-emitting diode (Light emitting Diodes, LEDs) and laser diode (Laser-Diodes, LDs) etc. during light-emitting device, has the emission spectrum of wide wave band from UV to ruddiness.
When light-emitting device has higher external quantum efficiency (the carrier number of the photon number/injection that extracts), its power consumption is less.External quantum efficiency can be got optical efficiency (number of photons that extracts/launch number of photons) or internal quantum (the carrier number of the number of photons/injection of launching) promotes by increase.The increase of internal quantum represents that the heat energy of changing self-luminous assembly electric power reduces.Therefore, the increase of internal quantum not only reduces power consumption, has suppressed the situation that causes reliability to reduce because of heating simultaneously.
The optical efficiency of getting of LED can be by generating bottom limitation layer or it routing improved at transparency carrier, rather than on the extinction substrate.LED can be with (energy gap) to be equivalent to or less than the arbitrary layer of luminescent layer, can lower the optical efficiency of getting of transparency carrier LED.Because active layer (active layer) also claims luminescent layer, the part light of emission passes through light-absorption layer in bright dipping to LED.These light-absorption layers can reduce the number that passes through difference row or other shortcoming of luminescent layer, or are used for simplifying the LED processing procedure.Another effect be reduce heterogeneous interface can be with skew, and reduction imposes on the voltage of contact, with the specific currents steering diode.Because the light-absorption layer absorbing wavelength efficient light longer than absorbing wavelength of short light is come well, so the performance impact that emission wavelength is the LED of 590nm to suffer is the cause that exists because of these absorbed layers greater than the LED of emission wavelength 640nm.
Improving another approach that LED gets optical efficiency is the alligatoring light-emitting diode.Fig. 1 shows traditional light-emitting diode.When electric current imposed on p contact and n contact, light beam was from multiple quantum trap (multiple quantum well, MQW) emission.The light beam that so makes progress can be utilized.For increasing the light of getting of light-emitting diode, make the upper surface of alligatoring light-emitting diode (it is formed with p contact and n contact) afterwards at whole light emitting diode construction.Roughening treatment changes the rising angle of emission self-luminous diode upper surface light beam, promotes the effect of getting light to reach.Yet the light beam of emission can't be utilized downwards, and can be absorbed by the absorbed layer under the MQW.Fig. 2 shows another solution of using the patterning sapphire substrate.The patterning sapphire substrate can make more, and multiple beam self-luminous diode disengages.Yet the method still has shortcoming.For instance, segment beam will be absorbed before being emitted to substrate, therefore can't effectively promote and get optical efficiency.
Except utilizing means such as alligatoring, also adopt the reflector of light-emitting diode one side usually, as Bragg reflector (Bragg reflector).Fig. 3 shows the 6th, 643, No. 304 patents of the U.S., and Bragg reflector is made up of the staggered material layers of differing refraction indices.Window layer (window layer) is positioned at the top of light-emitting diode, and Bragg reflector (Bragg reflector) then is formed at the bottom.In fact, Bragg reflector increases in order to reverberation that to get optical efficiency quite effective.Right Bragg reflector processing procedure is complicated, is difficult to reduce the production cost of the light-emitting diode with Bragg reflector layer.
No matter be to use patterning sapphire substrate or Bragg reflector layer, all can increase efficient beam.Yet before light beam arrived light-emitting diode top layer or Bragg reflector layer, segment beam still can absorb by absorbed layer.Can achieve a solution as above-mentioned problem, then can significantly improve and get optical efficiency.
Summary of the invention
Because Prior Art is subject to the problems referred to above.Purpose of the present invention is for providing a kind of III group-III nitride based illuminating device and manufacture method thereof that optical efficiency is got in lifting that have.
According to a viewpoint of the present invention, promote the method for getting optical efficiency of III group-III nitride based illuminating device, may further comprise the steps: substrate a) is provided; B) in the unadulterated III group-III nitride of substrate formation basic unit; C) the unadulterated III group-III nitride of alligatoring basic unit; D) in unadulterated III group-III nitride basic unit, generate n type III nitride base coating layer, active region, p-type III nitride base coating layer in regular turn; And e) provides p contact and n contact at p-type III nitride base coating layer and n type III nitride base coating layer respectively.Wherein several gaps (gap) is formed between unadulterated III group-III nitride basic unit and the n type III nitride base coating layer.
According to another conception of the present invention, promoting III group-III nitride based illuminating device, to get the method step of optical efficiency as follows: a) provide substrate; B) form the first unadulterated III group-III nitride basic unit at substrate; C) the unadulterated III group-III nitride of alligatoring first basic unit; D) in the first unadulterated III group-III nitride basic unit, generate the second unadulterated III group-III nitride basic unit, n type III nitride base coating layer, active region and p-type III nitride base coating layer in regular turn; And e) provides p contact and n contact at p-type III nitride base coating layer and n type III nitride base coating layer respectively.Several gaps are formed between the first unadulterated III group-III nitride basic unit and the second unadulterated III nitride base coating layer.
The another viewpoint according to the present invention, the method for getting optical efficiency of lifting III group-III nitride based illuminating device may further comprise the steps: substrate a) is provided; B) in the unadulterated III group-III nitride of substrate formation basic unit; C) form a n type III nitride base coating layer in unadulterated III group-III nitride basic unit; D) alligatoring the one n type III nitride base coating layer; E) on a n type III nitride base coating layer, generate the 2nd n type III nitride base coating layer, active region, p-type III nitride base coating layer in regular turn; And e) provides p contact and n contact at p-type III nitride base coating layer and the 2nd n type III nitride base coating layer respectively.Several gaps are formed between a n type III nitride base coating layer and the 2nd n type III nitride base coating layer.
The conception according to the present invention, substrate is sapphire substrate, carborundum (silicon carbide) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate or GaAs (GaAs) substrate.
The conception according to the present invention, roughening treatment realizes by dry etching or wet etching.
The conception according to the present invention, dry ecthing is reactive ion etching (reactive ion etching), inductively coupled plasma etching (inductively coupled plasma etching) or high-density plasma etching (high density plasma etching).
The objective of the invention is for propose a kind of have to promote get the III group-III nitride based illuminating device of optical efficiency, comprise substrate; Have the unadulterated III group-III nitride basic unit of coarse surface, be formed on the substrate; N type III nitride base coating layer, active region, with p-type III nitride base coating layer, be created in regular turn in the unadulterated III group-III nitride basic unit; And p contact and n contact, be arranged at respectively on p-type III nitride base coating layer and the n type III nitride base coating layer.Several gaps are formed between unadulterated III group-III nitride basic unit and the n type III nitride base coating layer.
Another object of the present invention has to promote for proposition is a kind of gets the III group-III nitride based illuminating device of optical efficiency, comprising: substrate; Have the first unadulterated III group-III nitride basic unit of coarse surface, be formed on the substrate; The second unadulterated III group-III nitride basic unit, n type III nitride base coating layer, active region and p-type III nitride base coating layer are created in the first unadulterated III group-III nitride basic unit in regular turn; And p contact and n contact, be arranged at respectively on p-type III nitride base coating layer and the n type III nitride base coating layer.Several gaps are formed between the first unadulterated III group-III nitride basic unit and the second unadulterated III nitride base coating layer.
Another purpose of the present invention has to promote for proposition is a kind of gets the III group-III nitride based illuminating device of optical efficiency, comprising: substrate; Be formed at the unadulterated III group-III nitride basic unit on the substrate; N type III nitride base coating layer with coarse surface is formed in the unadulterated III group-III nitride basic unit; The 2nd n type III nitride base coating layer, active region, p-type III nitride base coating layer are created on the n type III nitride base coating layer in regular turn; And p contact and n contact, be arranged at respectively on p-type III nitride base coating layer and the 2nd n type III nitride base coating layer.Several gaps are formed between a n type III nitride base coating layer and the 2nd n type III nitride base coating layer.
The conception according to the present invention, substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
Description of drawings
Fig. 1 shows the light-emitting device with alligatoring upper surface of prior art.
Fig. 2 shows the light-emitting device with alligatoring substrate of prior art.
Fig. 3 shows the light-emitting device that Bragg reflector (Bragg reflector) layer comes folded light beam that has of prior art.
Fig. 4 shows first embodiment of light-emitting device of the present invention.
How the light beam that Fig. 5 shows first embodiment reflects.
Fig. 6 shows the light-emitting device of second embodiment of the invention.
Description of reference numerals :-light-emitting diode 10; Substrate 101; U-GaN layer 102; Gap 103; N-GaN layer 104; Active region 105; P-GaN layer 106; P contact 107; N contact 108; Light-emitting diode 20; Substrate 201; The one u-GaN layer 202; Gap 203; The 2nd u-GaN layer 204; N-GaN layer 205; Active region 206; P-GaN layer 207; P contact 208; N contact 209.
Embodiment
Two embodiment that embody feature of the present invention and advantage will be described in detail in the explanation of back segment.The present invention can have various variations in different aspects, neither departing from the scope of the present invention, and explanation wherein and the graphic usefulness that ought explain in itself, but not in order to limit the present invention.
First embodiment
Fig. 4 shows the first embodiment of the present invention.Light-emitting diode 10 is based on manufacturing of the present invention.Light-emitting diode 10 mainly becomes branch to form by the III group-III nitride.At first form substrate 101.Substrate 101 is sapphire substrate.Unadulterated (undoped) gallium nitride (u-GaN) layer 102 is formed on the substrate 101.The alligatoring of u-GaN layer 102 can be handled by dry ecthing or wet etching.Dry etch process is reactive ion etching (reactive ion etching) preferably.In fact also can adopt inductively coupled plasma etching (inductively coupled plasma etching) or high-density plasma etching.U-GaN layer 102 has the alligatoring upper surface.
In general, the surface of alligatoring u-GaN layer 10 and to control its surface coarsening degree be easily.The spacing at adjacent two peaks (peaks) can be less than 10 μ m on the coarse surface.Next, n-GaN layer 104 is epitaxially grown on the u-GaN layer 102.Because spacing causes gap (gap) 103 to be formed between u-GaN layer 102 and the n-GaN layer 104 for a short time.
After n-GaN layer 104 was finished, active region 105 and p-GaN layer 106 were formed on the n-GaN layer 104 in regular turn.Active region 105 for the multiple quantum trap that produces light beam (Multiple Quantum Well, MQW).But p-GaN layer 106 self-luminous diode 10 emission light beams.At last, p contact 107 and n contact 108 are connected to p-GaN layer 106 and u-GaN layer 102 respectively with power supply.
Coarse surface is between u-GaN layer 102 and n-GaN layer 104.In other words, roughening treatment is to form the back at u-GaN layer 102 to carry out.Substrate 101 is not limited to sapphire substrate, also can be carborundum (silicon carbide) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate or GaAs (GaAs) substrate.
Because spacing is quite little, so that the take up an official post epitaxial growth of one deck of plane surface is not handled and can't be filled up spacing fully, thereby forms gap 103.Please refer to Fig. 5.Solid arrow represents that light penetrates u-GaN layer 102 and n-GaN layer 104, is reflected.Dotted arrow shows light beam through total reflection, and this is to be about 2～4 because the air refraction index in the gap 103 is about the refractive index of 1, n-GaN layer 104.Light beam can reflex to n-GaN layer 104.Therefore, the efficient beam number of emission self-luminous diode 10 can increase, thereby optical efficiency is got in lifting.
Second embodiment
According to the present invention, coarse surface is not limited to the interface between two heterospheres.Roughening treatment also can impose on the two-layer of identical material.
Fig. 6 shows second embodiment of the invention.Light-emitting diode 20 is according to manufacturing of the present invention.As first embodiment, light-emitting diode 20 mainly becomes branch to form by the III group-III nitride.At first form sapphire substrate 201, then form a u-GaN layer 202 at substrate 201.The one u-GaN layer 202 carries out roughening treatment with reactive ion etching (reactive ion etching).Identical epitaxial process forms the 2nd u-GaN layer 204.In an embodiment, a u-GaN layer 202 comes down to identical with the 2nd u-GaN layer 204.The purpose of roughening treatment is to form several gaps 203 betwixt.
After the 2nd u-GaN layer 204 was finished, n-GaN layer 20, active region 206 and p-GaN layer 207 were formed on the u-GaN layer 204 in regular turn.Active region 206 also in order to the multiple quantum trap that produces photon (Multiple Quantum Well, MQW).At last, p contact 208 and n contact 209 are connected to p-GaN layer 207 and n-GaN layer 205 respectively with power supply.
The above only is preferred embodiment of the present invention, only is illustrative for the purpose of the present invention, and nonrestrictive.Those skilled in the art is understood, and can carry out many changes to it in the spirit and scope that claim of the present invention limits, revise, even equivalence, but all will fall within the scope of protection of the present invention.
Claims (18)
1. method of getting optical efficiency that promotes III group-III nitride based illuminating device may further comprise the steps:
A) provide substrate;
B) in the unadulterated III group-III nitride of substrate formation basic unit;
C) the unadulterated III group-III nitride of alligatoring basic unit is to form a unadulterated III group-III nitride basic unit with coarse surface;
D) in unadulterated III group-III nitride basic unit, generate n type III nitride base coating layer, active region, p-type III nitride base coating layer in regular turn; And
E) provide p contact and n contact at p-type III nitride base coating layer and n type III nitride base coating layer respectively;
It is characterized in that the spacing at adjacent two peaks is less than 10 μ m on the coarse surface, so that the epitaxial growth on the coarse surface handles and can't fill up spacing fully, thus between unadulterated III group-III nitride basic unit and n type III nitride base coating layer a plurality of gaps of formation.
2. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 1 is characterized in that, substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
3. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 1 is characterized in that roughening treatment realizes by dry etching or wet etching.
4. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 3 is characterized in that, dry ecthing is reactive ion etching, inductively coupled plasma etching or high-density plasma etching.
5. method of getting optical efficiency that promotes III group-III nitride based illuminating device may further comprise the steps:
A) provide substrate;
B) form the first unadulterated III group-III nitride basic unit at substrate;
C) the unadulterated III group-III nitride of alligatoring first basic unit is to form first a unadulterated III group-III nitride basic unit with coarse surface;
D) in the first unadulterated III group-III nitride basic unit, generate the second unadulterated III group-III nitride basic unit, n type III nitride base coating layer, active region and p-type III nitride base coating layer in regular turn; And
E) provide p contact and n contact at p-type III nitride base coating layer and n type III nitride base coating layer respectively;
It is characterized in that, the spacing at adjacent two peaks is less than 10 μ m on the coarse surface, so that the epitaxial growth on the coarse surface is handled can't fill up spacing fully, thereby forms a plurality of gaps between the first unadulterated III group-III nitride basic unit and the second unadulterated III nitride base coating layer.
6. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 5 is characterized in that, substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
7. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 5 is characterized in that roughening treatment realizes by dry etching or wet etching.
8. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 7 is characterized in that, dry ecthing is reactive ion etching, inductively coupled plasma etching or high-density plasma etching.
9. method of getting optical efficiency that promotes III group-III nitride based illuminating device may further comprise the steps:
A) provide substrate;
B) in the unadulterated III group-III nitride of substrate formation basic unit;
C) form a n type III nitride base coating layer in unadulterated III group-III nitride basic unit;
D) alligatoring the one n type III nitride base coating layer is to form a n type III nitride base coating layer with coarse surface;
E) on a n type III nitride base coating layer, generate the 2nd n type III nitride base coating layer, active region, p-type III nitride base coating layer in regular turn; And
E) provide p contact and n contact at p-type III nitride base coating layer and the 2nd n type III nitride base coating layer respectively;
It is characterized in that, the spacing at adjacent two peaks is less than 10 μ m on the coarse surface, so that the epitaxial growth on the coarse surface is handled can't fill up spacing fully, thereby forms a plurality of gaps between a n type III nitride base coating layer and the 2nd n type III nitride base coating layer.
10. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 9 is characterized in that, substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
11. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 9 is characterized in that roughening treatment realizes by dry etching or wet etching.
12. the method for getting optical efficiency of lifting III group-III nitride based illuminating device as claimed in claim 11 is characterized in that, dry ecthing is reactive ion etching, inductively coupled plasma etching or high-density plasma etching.
13. one kind has to promote and gets the III group-III nitride based illuminating device of optical efficiency, comprising:
Substrate;
Have the unadulterated III group-III nitride basic unit of coarse surface, be formed on the substrate;
N type III nitride base coating layer, active region, with p-type III nitride base coating layer, be created in regular turn in the unadulterated III group-III nitride basic unit; And
P contact and n contact are arranged at respectively on p-type III nitride base coating layer and the n type III nitride base coating layer;
It is characterized in that the spacing at adjacent two peaks is less than 10 μ m on the coarse surface, so that the epitaxial growth on the coarse surface handles and can't fill up spacing fully, thereby forms a plurality of gaps between unadulterated III group-III nitride basic unit and n type III nitride base coating layer.
14. as claimed in claim 13 have to promote get the III group-III nitride based illuminating device of optical efficiency, it is characterized in that substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
15. one kind has to promote and gets the III group-III nitride based illuminating device of optical efficiency, comprising:
Substrate;
Have the first unadulterated III group-III nitride basic unit of coarse surface, be formed on the substrate;
The second unadulterated III group-III nitride basic unit, n type III nitride base coating layer, active region and p-type III nitride base coating layer are created in the first unadulterated III group-III nitride basic unit in regular turn; And
P contact and n contact are arranged at respectively on p-type III nitride base coating layer and the n type III nitride base coating layer;
It is characterized in that, the spacing at adjacent two peaks is less than 10 μ m on the coarse surface, so that the epitaxial growth on the coarse surface is handled can't fill up spacing fully, thereby forms a plurality of gaps between the first unadulterated III group-III nitride basic unit and the second unadulterated III nitride base coating layer.
16. as claimed in claim 15 have to promote get the III group-III nitride based illuminating device of optical efficiency, it is characterized in that substrate is sapphire substrate, carborundum (substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
17. one kind has to promote and gets the III group-III nitride based illuminating device of optical efficiency, comprising:
Substrate;
Be formed at the unadulterated III group-III nitride basic unit on the substrate;
N type III nitride base coating layer with coarse surface is formed in the unadulterated III group-III nitride basic unit;
The 2nd n type III nitride base coating layer, active region, p-type III nitride base coating layer are created on the n type III nitride base coating layer in regular turn; And
P contact and n contact are arranged at respectively on p-type III nitride base coating layer and the 2nd n type III nitride base coating layer;
It is characterized in that, the spacing at adjacent two peaks is less than 10 μ m on the coarse surface, so that the epitaxial growth on the coarse surface is handled can't fill up spacing fully, thereby forms a plurality of gaps between a n type III nitride base coating layer and the 2nd n type III nitride base coating layer.
18. as claimed in claim 17 have to promote get the III group-III nitride based illuminating device of optical efficiency, it is characterized in that substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board, zinc oxide substrate or GaAs substrate.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720586B1 (en) * | 1999-11-15 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same |
| CN101043059A (en) * | 2006-03-24 | 2007-09-26 | 中国科学院半导体研究所 | Upside-down mounting structural Luminous diode manufacturing method with substrate surface roughening technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720586B1 (en) * | 1999-11-15 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same |
| CN101043059A (en) * | 2006-03-24 | 2007-09-26 | 中国科学院半导体研究所 | Upside-down mounting structural Luminous diode manufacturing method with substrate surface roughening technology |
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