CN102377926A - Image shooting device - Google Patents
Image shooting device Download PDFInfo
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- CN102377926A CN102377926A CN2011102365849A CN201110236584A CN102377926A CN 102377926 A CN102377926 A CN 102377926A CN 2011102365849 A CN2011102365849 A CN 2011102365849A CN 201110236584 A CN201110236584 A CN 201110236584A CN 102377926 A CN102377926 A CN 102377926A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 238000012937 correction Methods 0.000 claims description 129
- 238000009792 diffusion process Methods 0.000 claims description 86
- 230000005540 biological transmission Effects 0.000 claims description 32
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 25
- 238000005070 sampling Methods 0.000 description 23
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- 238000012545 processing Methods 0.000 description 15
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- 239000003990 capacitor Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
- H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- Transforming Light Signals Into Electric Signals (AREA)
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Abstract
An image shooting device includes: an image shooting part formed of a pixel array and a reading control part in which the pixel array includes a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion part, a transfer transistor, an amplifying transistor, and a reset transistor, and the reading control part performs reading by switching a first reading control in which the reset transistor is controlled to be turned off before exposure to read the pixel signal from a part of rows of the pixel array and a second reading control in which the pixel signal is read from the pixel array after the exposure; and a correcting part correcting the pixel signal read through the second reading control based on the pixel signal read through the first reading control.
Description
Technical field
The present invention relates to camera head.
Background technology
General electron camera is equipped with solid-state imagers such as ccd sensor or cmos sensor.For example under the situation of cmos sensor, the electric charge through each pixel of rectangular configuration on sensitive surface is put aside corresponding to incident light carries out electric charge-voltage transformation through pixel amplifier, is read into vertical signal line to every row.And the signal of reading from each pixel is read into the outside of cmos sensor via column amplifier, CDS circuit (correlated double sampling circuit), horizontal output circuit and output amplifier.Yet, the signal of reading from cmos sensor, comprise fixed pattern noise composition and dark shading (dark shading) the intrinsic noise contribution on the line direction that becomes to grade.Therefore, the technology (for example with reference to TOHKEMY 2006-222689 communique) that the view data that the correction data that has adopted use before exposure, to read from cmos sensor in order to remove these noise contributions is read from cmos sensor the back of making public is proofreaied and correct.
Yet; In order to shorten the time of obtaining of correction data, adopted the method that only from the part row of 1 picture, obtains correction data, in this case; Operating point is different in the pixel amplifier of the pixel amplifier of the row of obtaining correction data and the row of not obtaining correction data; So at the input-output characteristic of pixel amplifier is when using in the nonlinear zone, signal level in the ranks produces difference, has the problem of the image quality of infringement photographed images.
Summary of the invention
Camera head of the present invention; Possess image pickup part and correction portion; Said image pickup part is made up of pel array and read-out control part; Said pel array has disposed a plurality of pixels rectangularly; Said pixel has the amplifier transistor of the photoelectric conversion department of the savings electric charge corresponding with light quantity, picture element signal that electric charge that said charge transfer is kept in the transmission transistor of the diffusion zone that drifts about, output and the said drift diffusion zone is corresponding and the reset transistor that the electric charge that keeps in the said drift diffusion zone is resetted; Said read-out control part is read control and second to first and is read to control to switch and read; Said first reads to be controlled at said reset transistor to be controlled to before the exposure and ends, and from the part row of said pel array, reads said picture element signal, and said second reads and being controlled at the exposure back and from said pel array, reading said picture element signal; Said correction portion proofreaies and correct through said second and reads the picture element signal that control is read according to reading the picture element signal that control is read through said first.
And said first reads control is controlled to said transmission transistor and ends, and from the part row of said pel array, reads said picture element signal.
In addition, said first read said reset transistor that control will not read the row of said picture element signal and be controlled to and end.
Especially, said first read the said picture element signal that the row of the central portion that is positioned at said pel array is read in control.
According to the present invention, even be also not damage the noise contribution that horizontal direction is removed on image quality ground under the nonlinear situation at the input-output characteristic of pixel amplifier.
Description of drawings
Fig. 1 is the figure of the structure example of expression electron camera 100.
The flow chart of the processing example when Fig. 2 is the expression shooting.
Fig. 3 is the figure of the structure example of expression solid-state imager 103.
Fig. 4 is the figure of the circuit example of remarked pixel px.
Fig. 5 is the figure of the noise contribution of expression horizontal direction.
Fig. 6 is the figure during obtaining with view data during the correction data in when shooting expression obtains.
Fig. 7 is the routine figure of timing (timing) that expression obtains the row of correction data.
Fig. 8 is the figure of characteristic of the conducting resistance Ron of expression reset transistor Trst.
Fig. 9 is the figure of timing example that representes not obtain the row of correction data.
Figure 10 A is the figure of characteristic and the relation that pixel is exported of expression amplifier transistor Tamp.
Figure 10 B is the figure of characteristic and the relation that pixel is exported of expression amplifier transistor Tamp.
Figure 10 C is the figure of characteristic and the relation that pixel is exported of expression amplifier transistor Tamp.
Figure 11 is the routine figure of timing of the row of obtaining correction data of this execution mode of expression.
Figure 12 is the routine figure of timing of the row of not obtaining correction data of this execution mode of expression.
Embodiment
Below, use accompanying drawing to specify the execution mode of camera head of the present invention.Fig. 1 is the block diagram of the structure of the expression electron camera 100 corresponding with camera head of the present invention.
(structure of electron camera 100)
In Fig. 1, electron camera 100 is made up of optical system 101, mechanical shutter 102, solid-state imager 103, AFE (AFE(analog front end)) 104, switching part 105, line storage 106, correction data calculating part 107, subtraction portion 108, image buffer memory 109, image processing part 110, control part 111, memory 112, operating portion 113, display part 114 and storage card I/F115.
Solid-state imager 103 has disposed the pixel that light is transformed to the signal of telecommunication rectangularly on sensitive surface.And, will output to AFE104 from the signal that each pixel is read according to the instruction of control part 111.
The gain adjustment of the signal that AFE104 carries out according to the instruction of control part 111 reading from solid-state imager 103, A/D conversion etc.
Switching part 105 is according to the instruction of control part 111, switches the output destination of the data of reading from solid-state imager 103 via AFE104.For example control part 111 switches switching part 105 in order to obtain correction data, outputs to line storage 106 to the shading data of reading from solid-state imager 103.Perhaps, control part 111 switches switching part 105 in order after exposure, to obtain view data, outputs to subtraction portion 108 to the exposure data of reading from solid-state imager 103.At this, generate correction data according to the shading data before the exposure, from exposure data, deduct correction data and obtain the exposed images data.In addition, in the back correction data is obtained during, view data obtain during in data obtain and regularly be elaborated.
Correction data calculating part 107 generates correction data according to the shading data that are taken in the line storage 106.For example obtaining under the shading data conditions of multirow, correction data calculating part 107 to every column count mean value, generates the correction data of 1 row according to the shading data that are taken into the multirow of line storage 106.In addition, the correction data of 1 row has the correction data of each row.
The image processing that image processing part 110 is indicated from control part 111 for the view data enforcement that is stored in the image buffer memory 109 (processing etc. is stressed at color interpolation processing, gamma correction processing, edge).
Storage card I/F115 is the interface that is used to install storage card 115a, will be from the image data storage of control part 111 output among storage card 115a.Perhaps, read out in the shot image data of storing among the storage card 115a and output to control part 111 according to the instruction of control part 111.
At this, the flow process that the shooting in this execution mode that the flowchart text control part 111 of use Fig. 2 carries out is handled.In Fig. 2,, wait for release-push be pressed (step S102) when beginning during image pickup mode (step S 101).When release-push is pressed, obtain correction data (step S103), open and close mechanical shutter 102 and take (exposure) (step S104).Then, read exposure data and proofread and correct, obtain view data (step S105) through the correction data that in step S103, obtains.After this, carry out being kept at (step S107) among the storage card 115a after the image processing (step S106) such as color interpolation processing or gamma correction, finish shooting and handle (step S108).
Like this, the electron camera 100 of this execution mode treatment for correcting that can remove the noise contribution of horizontal direction is come photographic images.
(structure of solid-state imager 103)
The structure of solid-state imager 103 then, is described.Fig. 3 is the block diagram of the structure example of expression solid-state imager 103.In Fig. 3, solid-state imager 103 comprises pel array 151, vertical drive circuit 152, vertical signal line VLINE, pixel current source Pw, column amplifier Camp, CDS circuit 153, horizontal output circuit 154, horizontal drive circuit 155, the output amplifier AMPout that is made up of a plurality of pixel Px.At this, in that additional (n m) or (n) and under the situation about (m) putting down in writing, is made as expression specific pixel, row or row to each symbol.In Fig. 3, (n m) representes the coordinate of each pixel to pixel Px, and n is from 1 integer to (N+4), and m is from 1 to 4 integer.For example Px (2,1) representes the pixel of the 2nd row the 1st row, the vertical signal line of VLINE (3) expression the 3rd row, the transmission signals TX that TX (N+2) expression (N+2) is gone.In addition, each symbol under the situation of additional (), for example is being labeled as under the situation of pixel Px, is representing generally, when being labeled as vertical signal line VLINE, representing general whole vertical signal lines to whole pixels.
Represented that in the example of Fig. 3 (N+4) pixel is vertically arranged, (N+4) row of 4 pixels, the pel array 151 of 4 row have laterally been arranged.And,, identical control signal is provided from 152 pairs of every row of vertical drive circuit for each pixel of same lines.For example, 3 control signals (transmission signals TX (N+1), reset signal FDRST (N+1) and selection signal SEL (N+1)) are provided from vertical drive circuit 152 for 4 pixels (pixel Px (N+1,1) is to Px (N+1,4)) of (N+1) row.In addition, too about the 1st row, the 2nd row, (N+2) row, (N+3) row and (N+4) row.
In addition; The output of each pixel of same column is connected with the vertical signal line VLINE that disposes to every row; For the transistor and the pixel current source Pw that forms source follower of each each pixel of vertical signal line VLINE configuration, the signal that is read into each vertical signal line VLINE is imported into the column amplifier Camp of each row.For example the output of each pixel of the 1st row (from pixel Px (N+4,1) to Px (1,1)) is connected with vertical signal line VLINE (1), is imported into the column amplifier Camp (1) that has disposed pixel current source Pw (1).In addition, be listed as the 4th row too about the 2nd.
At this, use Fig. 4 that the structure of each pixel Px is described.Fig. 4 is the circuit diagram of pixel Px.In Fig. 4, pixel Px is by photodiode PD, transmission transistor Ttx, drift diffusion zone FD, reset transistor Trst, amplifier transistor Tamp and select transistor T sel to constitute.
Photodiode PD produces and savings and from the corresponding electric charge of reference object quantity of incident light.
Transmission transistor Ttx ends according to the transmission signals Tx conducting from vertical drive circuit 152 outputs.For example when transmission signals TX was high level, transmission transistor Ttx conducting was arrived drift diffusion zone FD to the charge transfer of putting aside among the photodiode PD.
Drift diffusion zone FD forms capacitor Cfd, preserves the electric charge that comes from photodiode PD transmission via transmission transistor Ttx.
Reset transistor Trst ends according to the reset signal FDRST conducting from vertical drive circuit 152 outputs.For example when reset signal FDRST was high level, reset transistor Trst conducting was released to supply voltage VDD side with the electric charge of preserving among the drift diffusion zone FD, and the current potential Vfd of drift diffusion zone FD is thus lifted to supply voltage VDD.
The amplifier transistor Tamp charge-voltage converting of preserving among the diffusion zone FD that will drift about is a voltage signal.
Select transistor T sel to end according to selection signal SEL conducting from vertical drive circuit 152 outputs.For example when selecting signal SEL to be high level, select transistor T sel conducting, the signal that amplifier transistor Tamp is exported reads into vertical signal line VLINE.
Like this; After the electric charge of putting aside among the photodiode PD of each pixel Px of pel array 151 shown in Figure 3 is transferred to drift diffusion zone FD temporarily; The vertical signal line VLINE (1) that is read into each row respectively is to VLINE (4), and the column amplifier Camp (1) that is imported into each row respectively is to Camp (4).
In Fig. 3, column amplifier Camp (1) is imported into CDS circuit 153 to the output of Camp (4).CDS circuit 153 is called as correlated double sampling circuit, is the circuit of removing the migration noise of each row from each pixel Px to column amplifier Camp.
At this, the action of CDS circuit 153 is described.The charge transfer that vertical drive circuit 152 is put aside in the photodiode PD with pixel Px is read the current potential Vfd (being called dark dense signal (dark signal) later on) of drift diffusion zone FD before drift diffusion zone FD.And, vertical drive circuit 152 read dark dense signal during control dark dense with sampling inhibit signal DARK_S/H, the dark dense signal of reading is kept among the dark dense electricity consumption container C d.Then, the charge transfer that vertical drive circuit 152 is put aside in the photodiode PD with pixel Px is read the current potential Vfd (being called the PD signal later on) of drift diffusion zone FD behind drift diffusion zone FD.And, vertical drive circuit 152 read the PD signal during control signal with sampling inhibit signal SIGNAL_S/H, the PD signal of reading is kept among the signal electricity consumption container C s.
Output amplifier AMPout for example is made up of differential amplifier, from the PD signal of horizontal output circuit 154 inputs, deducts dark dense signal, then from solid-state imager 103 outputs.Can remove the same phase noise of each row thus from each pixel Px to column amplifier Camp.In addition, CDS circuit 153 carries out subtraction through output amplifier AMPout, finishes the removal of the deviation noise of each row, and therefore also can comprise horizontal output circuit 154, horizontal drive circuit 155 and output amplifier AMPout is used as CDS circuit 153.Perhaps, can from the PD signal, not deduct dark dense signal yet, handle but carry out subtraction in the outside of solid-state imager 103 (for example AFE104) through output amplifier AMPout.
At this, CDS circuit 153 can be removed the deviation noise of each row, but can't remove the noise contribution of the horizontal direction between row.Therefore, as putting down in writing in the prior art, need to remove the fixed pattern noise composition, the dark shading that from the signal that solid-state imager 103 is read, the comprise horizontal direction (line direction) that becomes to grade and go up intrinsic noise contribution.
(about correction data)
Then, explain and be used to remove fixed pattern noise composition, dark shading become the to grade correction data of intrinsic noise contribution on the horizontal direction.Fig. 5 is the figure that is used to explain treatment for correcting.In Fig. 5, the example the when noise contribution of (not proofreading and correct) horizontal direction is not removed in image 201 expression.In the image 201 before correction, present the vertical stripe of white or black in the horizontal direction or near the two ends dark shading of the blackening slowly to the left and right picture central authorities.The noise contribution that comprises such horizontal direction the both sides of shading data of when the shading that mechanical shutter 102 is closed, reading and the exposure data of after exposure, reading equally from solid-state imager 103 from solid-state imager 103.Therefore, use the preceding shading data of reading of exposure to generate the correction data 250 of the intrinsic noise characteristic of expression horizontal direction from predefined specific row.Then, from the exposure data that solid-state imager 103 is read, deduct correction data 250 from the back of making public.Thus, remove noise contributions that in exposure data, comprise and horizontal directions correction data 250 identical characteristics, obtain the image 202 after the correction of high image quality.In addition, in Fig. 5, the light of supposing same brightness incides whole of solid-state imager 103.
Yet; As shown in Figure 6; Need be pressed at release-push from operating portion 113 begin till the actual exposure during read the shading data correction data obtain during, therefore, when reading the shading data of whole row; Elongated during correction data obtains, there is the problem that time lag increases that discharges.Therefore, generally in order to reduce to discharge time lag, adopt not from whole row of solid-state imager 103 but from part row, read the method that the shading data generate correction data.In this case, shown in the image 203 of Fig. 5, in 1 picture, exist and read the capable 203a of shading data and do not read the capable 203b of shading data.Particularly the characteristic at the pixel amplifier (amplifier transistor Tamp) that uses pixel Px is under the situation in nonlinear zone; At the capable 203a that reads the shading data with do not read between the capable 203b of shading data; In the current potential Vfd of drift diffusion zone FD, produce potential difference; Therefore shown in the image 203 of Fig. 5, for example the generation capable 203a that obtains the shading data compares the problem of blackening with the capable 203b that does not obtain the shading data.
Use Fig. 7 that its reason is described.At this,, be made as (N+3) to the row of not reading the shading data (obsolete row in the generation of correction data) OK reading (N+1) that row that the shading data generate correction data is made as Fig. 3 OK.The sequential chart of the prior art during obtaining with view data during correction data that Fig. 7 representes to obtain (N+1) row of correction data obtains.In addition, during correction data obtains, read the shading data from solid-state imager 103 and generate correction data, during view data obtains, read exposure data, the correction data that generates before deducting generates corrected image data.
In Fig. 7, represent identical control signal with the control signal of Fig. 3 and Fig. 4 same-sign.In addition, before moment T0, transmission transistor Ttx and the reset transistor Trst of whole pixel Px, through transmission signals TX and together conducting of reset signal FDRST, the electric charge of photodiode PD and drift diffusion zone FD is initialised together.Then, the voltage Vfd (N+1) of the drift diffusion zone FD of T0 (N+1) row becomes Vfd_init1 constantly.At this, there are a plurality of pixel Px in (N+1) row, therefore the voltage Vfd of the drift diffusion zone FD among the wherein some pixel Px of voltage Vfd (N+1) expression of supposition drift diffusion zone FD.
(correction data obtain during)
At moment T1, when selecting signal SEL to become high level, selection transistor T sel conducting, the voltage Vfd of drift diffusion zone FD is via amplifier transistor Tamp and select transistor T sel to be read into vertical signal line VLINE.
At moment T2, FDRST becomes high level when reset signal, and during reset transistor Trst conducting, the voltage Vfd of drift diffusion zone FD is near the voltage of power vd D.Yet the conducting resistance Ron of reset transistor Trst is shown in Fig. 8 (figure of the source voltage Vs of expression reset transistor Trst and the characteristic of conducting resistance Ron), along with the source potential Vs of reset transistor Trst increases near supply voltage VDD.Therefore, the current potential Vfd of drift diffusion zone FD changes according to the pulse duration (interval of T2 and T3 constantly) of reset signal FDRST shown in Figure 7.At this; When being made as Vfd_init1 to the current potential of the drift diffusion zone FD before making reset signal FDRST become high level; When making reset signal FDRST (from moment T2 to moment T3) current potential of becoming the drift diffusion zone FD behind the high level is made as Vfd_after1 at the fixed time, from the signal that pixel Px reads, producing potential difference Δ Vfd_r_on1 through reset signal FDRST.
From moment T4 to T5; When dark dense when becoming high level with sampling inhibit signal DARK_S/H, the current potential Vfd_after1 that the electric charge of putting aside among the photodiode PD (signal charge) is transferred to the drift diffusion zone FD before the drift diffusion zone FD is stored among the dark dense electricity consumption container C d.
To T7, when transmission signals TX becomes high level, be transferred to drift diffusion zone FD to the signal charge of photodiode PD from moment T6.
At moment T8 to T9; When signal becomes high level with sampling inhibit signal SIGNAL_S/H, be stored among the signal electricity consumption container C s with the corresponding voltage of current potential Vfd_after1 of drift diffusion zone FD after being transferred to drift diffusion zone FD to the signal charge of photodiode PD.At this; Be transferred to the signal charge of photodiode PD behind the drift diffusion zone FD with the current potential that is transferred to the drift diffusion zone FD before the drift diffusion zone FD and be essentially same potential Vfd_after1, this is because the signal charge of photodiode PD has been carried out initialization.
At moment T10 to T13; Through horizontal drive circuit 155 short pulse of the horizontal output signal GH1 to GH4 of Fig. 7 is offered each signal with switch S so and the dark dense switch S do that uses; Each signal that sampling keeps in signal electricity consumption container C s and dark dense electricity consumption container C d is read into output amplifier AMPout successively, outputs to AFE104 from solid-state imager 103.
At this, when reading the correction data generation with the shading data,,, correction data reads the shading data during obtaining according to the step identical with sequential chart illustrated in fig. 7 since (N+2) is capable.
Like this, be kept at the shading data that output to AFE104 in the line storage 106 via switching part 105, generate correction data through correction data calculating part 107.For example, from this two row of (N+1) row and (N+2) row when having read the shading data, in line storage 106, preserve (N+1) row and (N+2) and go these two shading data of going.In this case, correction data calculating part 107 is for example obtained the mean value of shading data of same column of shading data of shading data and (N+2) row of (N+1) row, generates the correction data of these row.Likewise, correction data calculating part 107 can be obtained the correction data that each correction data that is listed as obtains the amount of 1 row.
(view data obtain during)
After during correction data obtains, as shown in Figure 6, savings and light incide the corresponding electric charge (exposure) of light quantity of photodiode PD of each pixel of solid-state imager 103.Then, during beginning view data shown in Figure 7 obtains.In addition, identical in the brightness of this hypothesis incident light for whole of pel array 151, so that understand characteristic easily.
In Fig. 7, the current potential Vfd that begins the drift diffusion zone FD of the moment T20 during view data obtains after during correction data obtains, finishing is Vfd_after1.
At moment T21, when selecting signal SEL to become high level, when selecting transistor T sel conducting, the voltage Vfd of drift diffusion zone FD is via amplifier transistor Tamp and select transistor T sel to be read into vertical signal line VLINE.
At moment T22, when reset signal FDRST became high level, reset transistor Trst conducting, the voltage Vfd of drift diffusion zone FD was near the voltage of power vd D.Yet the moment T2 during obtaining with correction data is same, and according to the characteristic of the conducting resistance Ron of reset transistor Trst, the current potential Vfd of drift diffusion zone FD changes according to the pulse duration (interval of T22 and T23 constantly) of reset signal FDRST.And; With identical during correction data obtains; Produce potential difference Δ Vfd_r_on1 in the front and back of reset signal FDRST, the current potential Vfd_after1 of the drift diffusion zone FD during view data obtains before the beginning become make reset signal FDRST at the fixed time (from moment T22 to T23) become the current potential Vfd_after2 of the drift diffusion zone FD behind the high level.
From moment T24 to T25; When dark dense when becoming high level with sampling inhibit signal DARK_S/H, the pairing voltage of current potential Vfd_after2 that the electric charge of putting aside in the photodiode (signal charge) is transferred to the drift diffusion zone FD before the drift diffusion zone FD is stored among the dark dense electricity consumption container C d.
To T27, when transmission signals TX becomes high level, be transferred to drift diffusion zone FD to the signal charge of photodiode PD from moment T26.In this case, owing to make public, therefore reduce the potential difference Δ Vfd1 corresponding with light quantity, drift diffusion zone FD becomes current potential Vfd_img1.
At moment T28 to T29; When signal became high level with sampling inhibit signal SIGNAL_S/H, the pairing voltage of current potential Vfd_img1 that the signal charge of photodiode PD is transferred to the drift diffusion zone FD behind the drift diffusion zone FD was stored among the signal electricity consumption container C s.
At moment T30 to T33; Through horizontal drive circuit 155 short pulse of the horizontal output signal GH1 to GH4 of Fig. 7 is offered each signal with switch S so and the dark dense switch S do that uses, each signal that sampling keeps in signal electricity consumption container C s and dark dense electricity consumption container C d is read into output amplifier AMPout successively.Then, the signal (Δ Vfd1) that in output amplifier AMPout, from PD signal (Vfd_img1), deducts dark dense signal (Vfd_after2) gained is outputed to AFE104 from solid-state imager 103.
During the view data of moment T40 end (N+1) row obtains,, repeat identical processing from moment T20 to T40 to whole row of reading the shading data in order to obtain correction data.
Like this, output to subtraction portion 108 to the exposure data that outputs to AFE104 via switching part 105.Subtraction portion 108 deducts during correction data obtains the correction data that generates through correction data calculating part 107 from exposure data, generate the view data behind the noise contribution of having removed horizontal direction.For example in Fig. 3, from the exposure data of reading by pixel Px (N+1,1), deduct the correction data of the 1st row of the correction data of previous generation, obtain the view data of pixel Px (N+1,1).Likewise, from the exposure data of reading by pixel Px (N+1,2), deduct the correction data of the 2nd row; Obtain the view data of pixel Px (N+1,2), from by pixel Px (N+1; 3) and deduct the correction data of the 3rd row and the correction data of the 4th row in the exposure data read of pixel Px (N+1,4) respectively, obtain pixel Px (N+1 respectively; 3) and the view data of pixel Px (N+1,4).
Then, the sequential chart that uses Fig. 9 describes the situation of the row of not reading the shading data that are used to generate correction data (for example (N+3) OK).In addition, the symbolic representation identical content identical with the sequential chart of Fig. 7.For example; Transmission signals TX, reset signal FDRST, selection signal SEL, dark dense using with the inhibit signal DARK_S/H that samples, signal are adopted inhibit signal SIGNAL_S/H, horizontal output signal GH1 to GH4, and the moment T20 during view data obtains is between T40 being the timing identical with Fig. 7.
On the other hand; At (N+3) that do not read the shading data that are used for generating correction data OK; Before moment T0, all the transmission transistor Ttx of pixel Px and reset transistor Trst are also together through transmission signals TX and reset signal FDRST conducting, and the electric charge of photodiode PD and drift diffusion zone FD is initialised together; Identical with the situation of Fig. 7, the voltage Vfd (N+1) of the drift diffusion zone FD of T0 (N+3) row becomes Vfd_init1 constantly.
Under the situation of Fig. 9,, correction data do not export transmission signals TX and reset signal FDRST during obtaining, and therefore, the current potential Vfd of drift diffusion zone FD keeps voltage Vfd_init1 after the initialization and begins during view data obtains.Identical with the situation of Fig. 7, make public the savings electric charge corresponding in the photodiode PD of each pixel Px before during the beginning view data obtains with the light quantity of incident light.Then, obtain since moment T20 view data during.
At moment T21, when selecting signal SEL to become high level, when selecting transistor T sel conducting, the voltage Vfd of drift diffusion zone FD is via amplifier transistor Tamp and select transistor T sel to be read into vertical signal line VLINE.
At moment T22, when reset signal FDRST became high level, reset transistor Trst conducting, the voltage Vfd of drift diffusion zone FD was near the voltage of power vd D.Yet; Identical with the situation of Fig. 7; Characteristic according to the conducting resistance Ron of reset transistor Trst; Produce potential difference Δ Vfd_r_on3 in the front and back of reset signal FDRST, the current potential Vfd_init1 of the drift diffusion zone FD during view data obtains before the beginning becomes current potential Vfd_after3 at the moment T23 that reset signal FDRST finishes.At this, the current potential Vfd of the drift diffusion zone FD during the situation hypograph data of Fig. 7 obtain before the beginning is Vfd_after1, under the situation of Fig. 9, becomes Vfd_init1 relatively therewith.
At moment T24 to T25; When dark dense when becoming high level with sampling inhibit signal DARK_S/H, the pairing voltage of current potential Vfd_after3 that is transferred to the electric charge of putting aside among the photodiode PD (signal charge) the drift diffusion zone FD before the drift diffusion zone FD is stored among the dark dense electricity consumption container C d.
To T27, when transmission signals TX becomes high level, be transferred to skew diffusion zone FD to the signal charge of photodiode PD at moment T26.In this case, owing to make public, therefore reduced the potential difference Δ Vfd2 corresponding with light quantity, drift diffusion zone FD becomes current potential Vfd_img2.
At moment T28 to T29; When signal became high level with sampling inhibit signal SIGNAL_S/H, the pairing voltage of current potential Vfd_img2 that is transferred to the signal charge of photodiode PD the drift diffusion zone FD behind the drift diffusion zone FD was stored among the signal electricity consumption container C s.
At moment T30 to T33; Through horizontal drive circuit 155 short pulse of the horizontal output signal GH1 to GH4 of Fig. 7 is offered each signal with switch S so and the dark dense switch S do that uses, signal with electric capacity Cs and dark dense electricity consumption container C d in each signal of keeping of sampling read into output amplifier AMPout successively.Then, in output amplifier AMPout, from PD signal (Vfd_img2), deducting dark dense signal (Vfd_after3) and signal (Δ Vfd2) output to AFE104 from solid-state imager 103.
During the view data of moment T40 end (N+1) row obtains,, repeat same processing from moment T20 to T40 to reading whole row of shading data in order to obtain correction data.
Like this, the exposure data that outputs to AFE104 is outputed to subtraction portion 108 via switching part 105.Subtraction portion 108 deducts during correction data obtains the correction data that generates through correction data calculating part 107 from exposure data, generate the view data behind the noise contribution of having removed horizontal direction.At this, for not reading the employed correction data of exposure data of the row of shading data,, use the correction data that in the row of reading the shading data, is obtained as before illustrated in fig. 7 in order to obtain correction data.In addition, also use correction data with the exposure data same column in this case.
Likewise,, can obtain the view data behind the noise of having proofreaied and correct horizontal direction, the photographed images of 1 picture is taken in the image buffer memory 109 for the exposure data of whole row of the pel array 151 of solid-state imager 103.
At this, the sequential chart of Fig. 7 and Fig. 9 is compared, the different reason of signal from solid-state imager 103 outputs is described in the row of during correction data obtains, reading the shading data and the row of not reading the shading data.
Be used to generate in shown in Figure 7 reading under the situation of row of shading data of correction data; The dark dense voltage of signals of drift diffusion zone FD is Vfd_after2; The PD voltage of signals is Vfd_img1, and therefore, the pairing voltage of the electric charge of in photodiode PD, putting aside is Δ Vfd1.
Relative with it; Be used to generate in shown in Figure 9 not reading under the situation of row of shading data of correction data; The dark dense voltage of signals of drift diffusion zone FD is Vfd_after3; The PD voltage of signals is Vfd_img2, and therefore, the pairing potential difference of the electric charge of in photodiode PD, putting aside is Δ Vfd2.
At this, the light that incides solid-state imager 103 is all the same with respect to whole pel arrays 151, and therefore, the electric charge of in photodiode PD, putting aside is also all identical to each pixel.Therefore; The current potential Vfd_after2 of the dark dense signal of drift diffusion zone FD is different with Vfd_after3, and the potential difference Δ fd1 that still the current potential Vfd of the charge transfer of putting aside among the photodiode PD behind the diffusion zone FD that drifts about is changed equates with potential difference Δ Vfd2.
At first, the situation of using Figure 10 A explanation in the input-output characteristic of pixel amplifier (amplifier transistor Tamp) is the desirable range of linearity, to use.Figure 10 A is the curve chart of relation of current potential Vfd and the pixel output voltage (outputing to the voltage of vertical signal line VLINE) of expression drift diffusion zone FD.In addition, the symbolic representation identical content identical in Figure 10 A with the sequential chart of Fig. 7 and Fig. 9.
Shown in Figure 10 A; When the input-output characteristic 351 of amplifier transistor Tamp when being linear, the output voltage (via selecting transistor T sel to be read into the pixel output voltage of vertical signal line VLINE) of amplifier transistor Tamp of potential difference Δ Vfd1 of drift diffusion zone FD that the row of the shading data that are used to generate correction data is read in input becomes Δ Vout1.Equally, the input output voltage of amplifier transistor Tamp of potential difference Δ Vfd2 of drift diffusion zone FD of not reading the row of the shading data that are used to generate correction data becomes Δ Vout2.At this, as before illustrated, the input-output characteristic 351 of amplifier transistor Tamp is linear, the potential difference Δ fd1=Δ Vfd2 of input, therefore, pixel output potential difference Δ Vout1=Vout2.
Like this; When the input-output characteristic 351 of amplifier transistor Tamp is linearity; At the row of reading the shading data that are used to generate correction data with do not read between the row of the shading data that are used to generate correction data; The pixel output voltage does not change, and the black-tape of image 203 that kind of Fig. 5 therefore do not occur.
Yet; Shown in Figure 10 B; When input-output characteristic 352 that kind of amplifier transistor Tamp when being non-linear; At the row of reading the shading data that are used to generate correction data with do not read between the row of the shading data that are used to generate correction data, the pixel output voltage is different, the such black-tape of image 203 of Fig. 5 therefore occurs.For example, in Figure 10 B, input to the potential difference Δ Vfd1=Δ Vfd2 of amplifier transistor Tamp; Identical with the situation of Figure 10 A; But the input-output characteristic of amplifier transistor Tamp 352 that kind are non-linear, therefore, and each output potential difference Δ Vout3 ≠ Δ Vout4.At this, Δ Vout3 is poor to the output potential of the input potential difference of Δ Vfd1, and Δ Vout4 is poor to the output potential of the input potential difference of Δ Vfd2.
Like this; At the input-output characteristic of amplifier transistor Tamp 351 when using in the nonlinear zone; At the row of reading the shading data that are used to generate correction data with do not read between the row of the shading data that are used to generate correction data; The pixel output voltage is different, therefore, the black-tape of image 203 that kind of Fig. 5 occurs.And, in the electron camera 100 of this execution mode, though at the input-output characteristic of amplifier transistor Tamp 351 when using in the nonlinear zone, also can remove the noise contributions of horizontal directions unlike image 203 such infringement image quality ground.
(correction data of this execution mode obtain during)
Figure 11 is identical with Fig. 7, is during the correction data of this execution mode corresponding with the row of reading the shading data that are used to generate correction data ((N+1) OK) obtains and the sequential chart of view data during obtaining.In addition, the symbolic representation identical content identical in Figure 11 with Fig. 7.For example transmission signals TX, reset signal FDRST, selection signal SEL, dark dense sampling inhibit signal DARK_S/H, the signal used are with sampling inhibit signal SIGNAL_S/H, horizontal output signal GH1 to GH4, and the moment T20 during view data obtains is the timing identical with Fig. 7 in T40.Equally; Selection signal SEL in during correction data obtains, dark dense with sampling inhibit signal DARK_S/H, signal with sampling inhibit signal SIGNAL_S/H, horizontal output signal GH1 to GH4, the moment T1 during correction data obtains, T4, T5 and be the timing identical with Fig. 7 from T8 to T13.Be during correction data obtains, not export transmission signals TX and reset signal FDRST with Fig. 7 different.Therefore, during correction data obtained, transmission transistor Ttx and reset transistor Trst kept the state that ends.
At moment T1, when selecting signal SEL to become high level, selection transistor T sel conducting, the voltage Vfd of drift diffusion zone FD is via amplifier transistor Tamp and select transistor T sel to be read into vertical signal line VLINE.
, when dark dense when becoming high level, read the corresponding voltage of current potential Vfd_init5 with initialized drift diffusion zone FD before moment T0, and it is kept among the dark dense signal electricity consumption container C d to T5 at moment T4 with sampling inhibit signal DARK_S/H.
, when signal becomes high level with sampling inhibit signal SIGNAL_S/H, read the corresponding voltage of current potential Vfd_init5 with initialized drift diffusion zone FD before moment T0, and it is kept among the signal electricity consumption container C s to T9 at moment T8.
At moment T10 to T13; Through horizontal drive circuit 155 short pulse of the horizontal signal GH1 to GH4 of Fig. 7 is offered each signal with switch S so and the dark dense switch S do that uses; Each signal that sampling keeps in signal electricity consumption container C s and dark dense electricity consumption container C d is read into output amplifier AMPout successively, outputs to AFE104 from solid-state imager 103.
At this, also reading correction data since (N+2) row when generating with the shading data, according to the identical step of sequential chart of explanation in above-mentioned (N+1) is capable, during correction data obtains, read the shading data.
Like this, the shading data that output to AFE104 are stored in the line storage 106 via switching part 105, generate correction data through correction data calculating part 107.In addition, the generation step of correction data is identical with step illustrated in fig. 7, and correction data calculating part 107 can be obtained the correction data that each correction data that is listed as obtains 1 row.
During explaining that then view data obtains.Under the situation of Figure 11; Identical with the situation of Fig. 9 of previous explanation,, correction data do not export transmission signals TX and reset signal FDRST during obtaining, therefore; The current potential Vfd of drift diffusion zone FD keeps initialized voltage Vfd_init5, during the beginning view data obtains.Then, identical with the situation of Fig. 7, make public the savings electric charge corresponding in the photodiode PD of each pixel Px before during the beginning view data obtains with the light quantity of incident light.Then, obtain since moment T20 view data during.
To T23, FDRST becomes high level when reset signal at moment T22, and during reset transistor Trst conducting, the voltage Vfd of drift diffusion zone FD is near the voltage of power vd D.Yet; Identical with the situation of Fig. 7; Characteristic according to the conducting resistance Ron of reset transistor Trst; Produce potential difference Δ Vfd_r_on4 in the front and back of reset signal FDRST, the current potential Vfd_init5 of the drift diffusion zone FD before the beginning during view data obtains becomes current potential Vfd_after4 at the moment T23 that reset signal FDRST finishes.
At moment T24 to T25; When dark dense when becoming high level with sampling inhibit signal DARK_S/H, the pairing voltage of current potential Vfd_after4 that the electric charge of putting aside among the photodiode PD (signal charge) is transferred to the drift diffusion zone FD before the drift diffusion zone FD is stored among the dark dense electricity consumption container C d.
To T27, when transmission signals TX becomes high level, be transferred to drift diffusion zone FD to the signal charge of photodiode PD at moment T26.In this case, reduced and the corresponding potential difference Δ Vfd3 of light quantity that makes public, the current potential of drift diffusion zone FD becomes Vfd_img3 from Vfd_after4.
At moment T28 to T29; When signal became high level with sampling inhibit signal SIGNAL_S/H, the pairing voltage of current potential Vfd_img3 that the signal charge of photodiode PD is transferred to the skew diffusion zone FD behind the drift diffusion zone FD was stored among the signal electricity consumption container C s.
At moment T30 to T33; Through horizontal drive circuit 155 short pulse of the horizontal output signal GH1 to GH4 of Fig. 7 is offered each signal with switch S so and the dark dense switch S do that uses, each signal that sampling keeps in signal electricity consumption container C s and dark dense electricity consumption container C d is read into output amplifier AMPout successively.Then, in output amplifier AMPout, from PD signal (Vfd_img3), deduct dark dense signal (Vfd_after4) and signal (Δ Vfd3) by being outputed to AFE104 from solid-state imager 103.
During the view data of moment T40 end (N+1) row obtains,, repeat same processing from moment T20 to T40 to whole row of reading the shading data in order to obtain correction data.
Like this, the exposure data that is outputed to AFE104 is outputed to subtraction portion 108 via switching part 105.Subtraction portion 108 deducts the correction data that during correction data obtains, generates through correction data calculating part 107 from exposure data, generate the view data of the noise contribution of having removed horizontal direction.
Likewise,, obtain the view data of the noise of having proofreaied and correct horizontal direction, the photographed images of 1 picture is taken in the image buffer memory 109 for the exposure data of whole row of the pel array 151 of solid-state imager 103.
Then, Figure 12 is during the correction data of this execution mode corresponding with the row of not reading the shading data that are used to generate correction data ((N+3) OK) obtains and the sequential chart of view data during obtaining.In addition, Figure 12 is the sequential chart corresponding with Fig. 9 of prior art.In addition, the symbolic representation identical content identical in Figure 12 with Figure 11.And; Under the situation of Figure 12, before moment T0, transmission transistor Ttx and the reset transistor Trst of whole pixel Px; Through transmission signals TX and together conducting of reset signal FDRST; The electric charge of photodiode PD and drift diffusion zone FD together is initialised, and is identical with the situation of Figure 11, and the voltage Vfd (N+1) of the drift diffusion zone FD of T0 (N+3) row becomes Vfd_init5 constantly.
In Figure 12,, correction data do not export transmission signals TX and reset signal FDRST during obtaining, and therefore, the current potential Vfd of the drift diffusion zone FD in when beginning was in the state of keeping the voltage Vfd_init5 after the initialization during view data obtained.And, make public before during the beginning view data obtains, in the photodiode PD of pixel Px, put aside the electric charge corresponding with the light quantity of incident light after, during obtaining since moment T20 view data.At this, T21 is identical with the situation of Figure 11 to the action of T40 constantly, and the current potential of the drift diffusion zone FD of T22 after the reset signal FDRST of T23 reaches Vfd_after4 through the conducting resistance Ron rising Δ Vfd_r_on4 of reset transistor Trst constantly.In addition, through the transmission signals TX from moment T26 to T27, corresponding to the electric charge of in photodiode PD, putting aside, the current potential Vfd of drift diffusion zone FD reduces Δ fd3 with the situation of Figure 11 identically, reaches Vfd_img3.
Like this; At the row of reading the shading data that are used for generating correction data with do not read the row of shading data, current potential Vfd_after4 and the current potential Vfd_img3 after the transmission before the drift diffusion zone FD is identical respectively for the charge transfer of in photodiode PD, putting aside.Therefore; Even the input-output characteristic at pixel amplifier (amplifier transistor Tamp) is under the situation about using in the nonlinear area; Also shown in Figure 10 C; The output voltage of amplifier transistor Tamp (via selecting transistor T sel to be read into the pixel output voltage of vertical signal line VLINE) becomes identical potential difference Δ Vout5 at the row of reading the shading data that are used for generating correction data with unread row.Its reason is, because the drift diffusion zone FD of each pixel Px of the row of reading the shading data that are used to obtain correction data is not carried out the driving that potential change is provided, so the operating point of the amplifier transistor Tamp of pixel Px does not change.
Like this; Electron camera 100 in this execution mode; Even at the input-output characteristic 351 of amplifier transistor Tamp when being non-linear; At the row of reading the shading data that are used to generate correction data with do not read that the pixel output voltage does not change between the row of the shading data that are used to generate correction data, therefore the such fixed pattern noise of image 203 of Fig. 5 can not appear.
In addition; In this execution mode illustrated electron camera 100; But also can be not in electron camera 100, and for example carry out the correcting circuit of same action in the set inside of solid-state imager 103 and correction data calculating part 107 or subtraction portion 108.
Like this; The electron camera 100 of this execution mode; Even the input-output characteristic 351 at amplifier transistor Tamp is under the situation about using in the nonlinear zone; Also can not can the such infringement of the image 203 image quality ground of image pattern 5 remove the noise contributions of horizontal directions, can obtain high-quality photographed images.
More than, through the for example clear camera head of the present invention of each execution mode, but under the situation that does not break away from its purport or its principal character, can implement through other various forms.Therefore, above-mentioned execution mode only simply illustrates in all respects, should not be interpreted as to limit.The present invention is represented by the scope of request patent protection, the invention is not restricted to the specification text.And, belong to the scope of asking patent protection equivalency range distortion or the change all within the scope of the invention.
Claims (8)
1. a camera head is characterized in that,
Possess image pickup part and correction portion,
Said image pickup part is made up of pel array and read-out control part,
Said pel array has disposed a plurality of pixels rectangularly; Said pixel has the amplifier transistor of the photoelectric conversion department of the savings electric charge corresponding with light quantity, picture element signal that electric charge that said charge transfer is kept in the transmission transistor of the diffusion zone that drifts about, output and the said drift diffusion zone is corresponding and the reset transistor that the electric charge that keeps in the said drift diffusion zone is resetted
Said read-out control part is read control and second to first and is read to control to switch and read; Said first reads to be controlled at said reset transistor to be controlled to before the exposure and ends; From the part row of said pel array, read said picture element signal; Said second reads and being controlled at exposure back and from said pel array, reading said picture element signal
Said correction portion proofreaies and correct through said second and reads the picture element signal that control is read according to reading the picture element signal that control is read through said first.
2. camera head according to claim 1 is characterized in that,
Said first reads control is controlled to be said transmission transistor and ends, and from the part row of said pel array, reads said picture element signal.
3. camera head according to claim 1 is characterized in that,
Said first reads said reset transistor that control will not read the row of said picture element signal is controlled to be and ends.
4. camera head according to claim 2 is characterized in that,
Said first reads said reset transistor that control will not read the row of said picture element signal is controlled to be and ends.
5. camera head according to claim 1 is characterized in that,
Said first reads the said picture element signal that the row of the central portion that is positioned at said pel array is read in control.
6. camera head according to claim 2 is characterized in that,
Said first reads the said picture element signal that the row of the central portion that is positioned at said pel array is read in control.
7. camera head according to claim 3 is characterized in that,
Said first reads the said picture element signal that the row of the central portion that is positioned at said pel array is read in control.
8. camera head according to claim 4 is characterized in that,
Said first reads the said picture element signal that the row of the central portion that is positioned at said pel array is read in control.
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| CN101056357A (en) * | 2006-04-14 | 2007-10-17 | 三匠科技股份有限公司 | Real time amplification system of hand-held electronic component |
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| JP5163708B2 (en) | 2013-03-13 |
| JP2012044307A (en) | 2012-03-01 |
| CN102377926B (en) | 2017-11-21 |
| CN107682647A (en) | 2018-02-09 |
| US20120038806A1 (en) | 2012-02-16 |
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