CN102377400A - Mesa-type at-cut quartz-crystal vibrating piece and the quartz-crystal device - Google Patents
Mesa-type at-cut quartz-crystal vibrating piece and the quartz-crystal device Download PDFInfo
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- CN102377400A CN102377400A CN2011102251439A CN201110225143A CN102377400A CN 102377400 A CN102377400 A CN 102377400A CN 2011102251439 A CN2011102251439 A CN 2011102251439A CN 201110225143 A CN201110225143 A CN 201110225143A CN 102377400 A CN102377400 A CN 102377400A
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- 239000013078 crystal Substances 0.000 title claims abstract description 99
- 230000002093 peripheral effect Effects 0.000 claims abstract description 40
- 235000014676 Phragmites communis Nutrition 0.000 claims description 66
- 230000004323 axial length Effects 0.000 claims description 22
- 230000005284 excitation Effects 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 244000273256 Phragmites communis Species 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012407 engineering method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/177—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Abstract
The present disclosure provides a mesa-type AT-cut quartz-crystal vibrating piece, in which amount of the vibrating unit is adjusted to appropriate amount, in order to inhibit unnecessary vibration and to prevent degradation. The mesa-type AT-cut quartz-crystal vibrating piece (30) for vibrating piece vibrates at 38.400 MHz comprises a rectangular excitation unit (31), a peripheral region (32) formed in periphery of the excitation unit and thinner than the excitation unit. The thickness difference h ([mu]m) between one principal surface of the excitation unit and the adjacent peripheral region is obtained by the following equation: h=(0.2Mx)-143 The length of the x-axis direction of the crystallographic X-axis is Mx ([mu]m).
Description
Technical field
The present invention relates to mesa AT cutting crystal vibrating reed and possess the crystal device of this mesa AT cutting crystal vibrating reed.
Background technology
As one of representative of thickness sliding vibration sheet is known AT cutting crystal vibrating reed arranged.With the crystal device of this AT cutting crystal vibrating reed folding and unfolding in package as a reference source of frequency and be widely used on the various electrical equipment.These crystal devices are in order to promote miniaturization, to obtain more the effectively closure effect of vibrational energy, implement to be provided with the Machining of Curved Surface of inclined-plane processing or the convex surface processing etc. of tilting zone in the periphery of the interarea of AT cutting crystal vibrating reed.
Like the disclosure of patent documentation 1 (TOHKEMY 2002-18698 communique), the Machining of Curved Surface of inclined-plane processing or convex surface processing etc. generally is on the periphery of quartz crystal resonator element, to form tilting zone through the method that is called the barreling method., along with utilizing the wafer engineering method to make the progress of the method for AT cutting crystal vibrating reed, carry out curvature processing and become difficult recently.Therefore, on AT cutting crystal vibrating reed, implement mesa (section difference shape) processing and replace curvature processing.
; There is following problem in mesa AT cutting crystal vibrating reed: can become the vibrational energy that results from the principal oscillation on the vibration section and the mixed states such as vibrational energy that result from the useless vibration on the vibration peripheral part that is formed on around the vibration section, deterioration the characteristic of AT cutting crystal vibrating reed.
Summary of the invention
The object of the present invention is to provide through the size of vibration section being made the mesa AT cutting crystal vibrating reed that suitable value suppresses useless generation of vibration, can prevent the deterioration of characteristic.
The 1st viewpoint is the mesa AT cutting crystal vibrating reed with the 38.400MHz vibration; Have encouraging the portion of shaking and being formed on the periphery and the thickness of encouraging the portion of shaking and being thinner than the peripheral part that shakes of encouraging of encouraging the portion of shaking of rectangle; When the axial length of the x of the crystallographic axis of encouraging the portion of shaking was Mx (μ m), the height h (μ m) that encourages the portion of shaking and the section difference of encouraging the peripheral part that shakes satisfied formula (1).
h＝(0.2×Mx)-143 (1)
The 2nd viewpoint is the mesa AT cutting crystal vibrating reed with the 32.736MHz vibration; Have encouraging the portion of shaking and being formed on the periphery and the thickness of encouraging the portion of shaking and being thinner than the peripheral part that shakes of encouraging of encouraging the portion of shaking of rectangle; When the axial length of the x of the crystallographic axis of encouraging the portion of shaking was Mx (μ m), the height h (μ m) that encourages the portion of shaking and the section difference of encouraging the peripheral part that shakes satisfied formula (2).
h＝(0.1×Mx)-87 (2)
The 3rd viewpoint is to have encouraging the portion of shaking and being formed on the periphery of encouraging the portion of shaking and thickness and being thinner than and encouraging the shake mesa AT cutting crystal vibrating reed of peripheral part of encouraging of the portion of shaking of rectangle; When the thickness of encouraging the portion of shaking is t (μ m), when the axial length of x of encouraging the crystallographic axis of the portion of shaking is Mx (μ m), a height h (μ m) who encourages the portion of shaking and the section difference of encouraging the peripheral part that shakes satisfies formula (3).
h＝(1.8×Mx/t
0.7)-92 (3)
The 4th viewpoint is any one the mesa AT cutting crystal vibrating reed according to claim 1 to 3, has to surround to encourage the housing that the peripheral part that shakes is encouraged in shake peripheral part and support.
The piezo-electric device of the 5th viewpoint possesses: any one mesa AT cutting crystal vibrating reed of claim 1 to 3; Be formed with recess, the base portion of folding and unfolding mesa AT cutting crystal vibrating reed on recess; And the cap of sealing recess.
The 6th viewpoint piezo-electric device possesses: have the mesa AT cutting crystal vibrating reed that the claim 4 of an interarea and another interarea is put down in writing; Has the 1st cap on the interarea that is bonded on housing; And has a base portion of the 2nd on another interarea that is bonded on housing.
The present invention can provide through the size of vibration section being made the mesa AT cutting crystal vibrating reed that suitable value suppresses useless generation of vibration, can prevent the deterioration of characteristic.
Description of drawings
Fig. 1 (a) is the stereogram of crystal device 100.
Fig. 1 (b) is the cutaway view of crystal device 100.
Fig. 1 (c) is the B-B cutaway view of Fig. 1 (b).
Fig. 2 (a) is the vertical view of AT cutting crystal vibrating reed 30.
Fig. 2 (b) is the D-D cutaway view of Fig. 2 (a).
Fig. 3 (a) is the chart of poor height h of the section of the specific vibration frequency of expression and the correlation of the axial length M x of x that encourages the portion of shaking 31.
Fig. 3 (b) is the height and the chart of the axial length M x of x that encourages the portion of shaking 31 with the correlation of the thickness t of encouraging the portion of shaking 31 of expression section difference.
Fig. 4 (a) is the stereogram of crystal device 200.
Fig. 4 (b) is the E-E cutaway view of Fig. 4 (a).
Fig. 5 (a) is the vertical view of cap 210.
Fig. 5 (b) is the vertical view of AT cutting crystal vibrating reed 230.
Fig. 5 (c) is the vertical view of substrate 220.
Among the figure:
10,210-cap, 20, the 220-substrate, 21, the 221-outer electrode, 22, the 222-connection electrode, 24, the 224-cavity; 30,230-AT cutting crystal vibrating reed, 31,231-encourages the portion of shaking, 32,232-encourages the peripheral part that shakes, 33,233-encourages the electrode that shakes, 34, the 234-extraction electrode; The 40-encapsulating material, 100, the 200-crystal device, the 1st of 211-, 212, the 225-recess; The 2nd of 223-, 235-housing, 236-linking arm, 237-tie point.
Embodiment
Below, based on accompanying drawing execution mode of the present invention is at length explained.At this, the special meaning that limits scope of the present invention of short of record just is not limited to these execution modes in following explanation.
(the 1st execution mode)
< formation of crystal device 100 >
Fig. 1 (a) is the stereogram of crystal device 100.Crystal device 100 is by cap 10, base portion 20 and be placed on AT cutting crystal vibrating reed 30 (with reference to Fig. 1 (the b)) formation in the base portion 20.AT cutting crystal vibrating reed is the Y axle of interarea with respect to the crystallographic axis (XYZ) of synthetic quartz, with center around the X from tilted 35 degree 15 minutes of the axial Y direction of Z.Therefore, the long side direction of crystal device 100 as the x direction of principal axis, as z ' direction of principal axis, is described with the above-below direction of crystal device 100 short side direction of crystal device 100 as y ' direction of principal axis.In addition, in the explanation of this specification with the axial height of y ', high with+direction indication, with-direction indication is low.
Fig. 1 (b) is the cutaway view of crystal device 100.Fig. 1 (b) be Fig. 1 (a) A-A or after the C-C cutaway view of Fig. 1 (c) of stating.Form cavity 24 through on base portion 20, forming recess.Be formed with connection electrode 22 in the bottom of cavity 24, connection electrode 22 is electrically connected with outer electrode 21 through conducting portion (not shown).On AT cutting crystal vibrating reed 30, be formed with and encourage the portion of shaking 31 and the peripheral part 32 that shakes of encouraging that is formed on the periphery of encouraging the portion of shaking 31.The thickness of encouraging the peripheral part 32 that shakes forms thinlyyer than encouraging the portion of shaking 31.Encourage the electrode 33 that shakes encouraging to be formed with on the interarea up and down of the portion of shaking 31.In addition, be formed with extraction electrode 34 encouraging on the peripheral part 32 that shakes, this extraction electrode 34 with encourage the electrode 33 that shakes and be electrically connected.Encouraging shake electrode 33 and extraction electrode 34 is on the surface of crystal, to form chromium (Cr) layer, on the surface of chromium layer, forms gold (Au) layer and is made.In addition, extraction electrode 34 is electrically connected with connection electrode 22 through conductive adhesive 41.Therefore, make that encouraging the electrode 33 that shakes is electrically connected with outer electrode 21.
Fig. 1 (c) is the B-B cutaway view of Fig. 1 (b).On the cavity 24 of base portion 20, be formed with 2 connection electrode 22.Connection electrode 22 and top the encouraging of the portion of shaking 31 of encouraging that is formed on AT cutting crystal vibrating reed 30 electrode 33 that shakes is electrically connected, another connection electrode 22 be formed on following the encouraging of encouraging the portion of shaking 31 electrode 33 that shakes and be electrically connected.
Fig. 2 (a) is the vertical view of AT cutting crystal vibrating reed 30.The x direction of principal axis of AT cutting crystal vibrating reed 30 is consistent with the X-direction of the crystallographic axis of crystal.In addition, to be the center consistent from the axial Y direction of Z 15 minutes the direction of 35 degree that tilted for the z ' direction of principal axis of AT cutting crystal vibrating reed 30 and X-direction with the crystallographic axis of crystal.The axial length Gx of x of the profile of AT cutting crystal vibrating reed 30 for example is 990 μ m, and the axial length Gz of z ' of the profile of AT cutting crystal vibrating reed 30 for example is 700 μ m.In addition, be Mx with the axial length of the x that encourages the portion of shaking 31, be Mz with the axial length of z '.
Fig. 2 (b) is the D-D cutaway view of Fig. 2 (a).With the shake thickness of peripheral part 32 of encouraging of AT cutting crystal vibrating reed 30 is Gy, is t with the thickness of encouraging the portion of shaking 31, is h with a height of encouraging portion of shaking 31 and the section difference of encouraging the peripheral part 32 that shakes.Encourage the portion of shaking 31 and the section difference of encouraging the peripheral part 32 that shakes be formed on AT cutting crystal oscillator 30+face of y ' axle side and-y ' axle side on, each section difference all forms with identical height.In addition, the height h of section difference is for just, and the thickness t of encouraging the portion of shaking 31 is bigger than the thickness G y that encourages the peripheral part 32 that shakes.
< about the height h of section difference >
The height h of the section of learning difference is relevant with axial length M x of the x that encourages the portion of shaking 31 and vibration frequency after the experiment of the size of the optimum that has carried out obtaining AT cutting crystal vibrating reed 30.In addition, the height h of section difference and the axial length M x of the x that encourages the portion of shaking 31 and to encourage the thickness t of the portion of shaking 31 relevant.Below, for these relevant describing.
Fig. 3 (a) is the chart of poor height h of the section of the specific vibration frequency of expression and the correlation of the axial length M x of x that encourages the portion of shaking 31.The transverse axis of Fig. 3 (a) representes to encourage the axial length M x of x (μ m) of the portion of shaking 31, the high h (μ m) of the longitudinal axis section of expression difference.In addition, the white circle of Fig. 3 (a) is that vibration frequency is the value of 38.400MHz, and black circles is that vibration frequency is the value of 32.736MHz.The inventor changes its length M x and has made 40 the AT cutting crystal vibrating reed 30 of the 38.400MHz of the height h=1 μ m of section difference.Also the height to other sections difference also changes its length M x and has made 40 AT cutting crystal vibrating reeds 30.The inventor measures CI (crystal impedance) value of these AT cutting crystal vibrating reeds 30.40 AT cutting crystal vibrating reeds 30 have produced deviation on its CI value, the CI value has the conic section (parabola) to lower convexity with respect to length M x.The each point of the white circle shown in Fig. 3 (a), black circles has write down the value that makes the minimum length M x of CI value on the height h of each vibration frequency and section difference.
In Fig. 3 (a), in two situation of 32.736MHz and 38.400MHz, all be increase along with the axial length M x of x that encourages the portion of shaking 31, the height h of section difference also increases.In addition, the value of each vibration frequency of the chart of Fig. 3 (a) is arranged side by side with rectilinear form.In Fig. 3 (a), the straight line of the straight line 50 expression 38.400MHz of solid line, the straight line of dashdotted straight line 51 expression 32.736MHz.Straight line 50 is represented by following formula (1).
h＝(0.2×Mx)-143 (1)
h＝(0.1×Mx)-87 (2)
Fig. 3 (b) is the height of expression section difference and encourages the axial length M x of x of the portion of shaking 31 and encourage the chart of the correlation between the thickness t of the portion of shaking 31.The transverse axis of Fig. 3 (b) is represented Mx/t
0.7, the height h (μ m) of the longitudinal axis section of expression difference.The height h of the section difference when in Fig. 3 (b), using stain to represent vibration frequency as 32.736MHz or 38.400MHz with make the minimum Mx/t of CI value
0.7Between relation.Encourage the thickness t of the portion of shaking 31 and when vibration frequency is 32.736MHz, measure, when vibration frequency is 38.400MHz, measure with 43.5 μ m with 51.0 μ m.Roughly on straight line 52 or near it, the position of stain can near linear 52 for stain shown in Fig. 3 (b).Straight line 52 can be represented with formula (3).
h＝(1.8×Mx/t
0.7)-92 (3)
Formula (1) and formula (2) are that the making vibration frequency is the situation of the AT cutting crystal vibrating reed 30 of 38.400MHz or 32.736MHz; Determined situation, can determine to make the height h of the section difference of the portion of shaking 31 of encouraging that the CI value reduces as the size of encouraging the portion of shaking 31 of table top portion.In addition, through using formula (3), need not vibration frequency and the height h of the section difference using thickness t of encouraging the portion of shaking 31 and the length M x that encourages the portion of shaking 31 to obtain to encourage the portion of shaking 31.
(the 2nd execution mode)
Also can on AT cutting crystal vibrating reed 30, form housing.Below, the crystal device 200 that possesses the AT cutting crystal vibrating reed that is formed with housing is described.
< formation of crystal device 200 >
Fig. 4 (a) is the stereogram of crystal device 200.Crystal device 200 is made up of cap 210, AT cutting crystal vibrating reed 230 and base portion 220.Crystal device 200 is configuration cap 210 on top, the configuration base portion 220 in the bottom, and AT cutting crystal vibrating reed 230 is configured in the position of partes tegmentalis 210 and base portion 220 clampings.In addition, below base portion 220, be formed with outer electrode 221.Cap 210 and base portion 220 are formed by materials such as glass or crystals.
Fig. 4 (b) is the E-E cutaway view of Fig. 4 (a).AT cutting crystal vibrating reed 230 forms with the peripheral part 232 that shakes of encouraging that is formed on the periphery of encouraging the portion of shaking 231 by encouraging the portion of shaking 231, is formed with in addition and surrounds the housing 235 of encouraging the peripheral part 232 that shakes.Housing 235 supports encourages the peripheral part 232 that shakes.On an interarea of encouraging the portion of shaking 231 and another interarea, form respectively and encourage the electrode 233 that shakes, extraction electrode 234 is formed on the housing 235 through encouraging the peripheral part 232 that shakes from encouraging the electrode 233 that shakes.AT cutting crystal vibrating reed 230 through a pair of encourage shake electrode 233 applied voltages and with the regulation frequency vibration.One interarea of cap 210 and housing 235 be formed at cap 210-the 1st 211 of the face of y ' axle side engage, base portion is being formed at another interarea of housing 235+the 2nd 223 of the face of a y ' side engage.In addition, base portion 220+be formed with connection electrode 222 on the face of y ' axle side, connection electrode 222 is connected on the extraction electrode 234 when engaging with AT cutting crystal vibrating reed 230.In addition, connection electrode 222 is connected electrically on the outer electrode 221 through conducting portion (not shown).
AT cutting crystal vibrating reed 230 is t with the thickness of encouraging the portion of shaking 231, is that Gy forms with the thickness of encouraging the peripheral part 232 that shakes.Encourage the portion of shaking 231 and the section difference of encouraging the peripheral part 232 that shakes and formed by the face of the face of+y ' axle side and-y ' axle side, it highly is h.In addition; AT cutting crystal vibrating reed 230 is formed by synthetic quartz with AT cutting crystal vibrating reed 30 identically; The x direction of principal axis of AT cutting crystal vibrating reed 230 is consistent with the X-direction of quartz wafer, and to be the center consistent from the axial Y direction of Z 15 minutes the direction of 35 degree that tilted for the z ' direction of principal axis of AT cutting crystal vibrating reed 230 and directions X with quartz wafer in addition.
Fig. 5 (a) is the vertical view of cap 210.Cap 210 has with the x direction of principal axis and is major axis, is the rectangular interarea of minor axis with z ' direction of principal axis.In addition, on the peripheral part of the face of-y ' axle side, be formed with the 1st 211 on the housing 235 that is connected AT cutting crystal vibrating reed 230, be formed with the recess 212 that is enclosed by the 1st bread at central portion.
Fig. 5 (b) is the vertical view of AT cutting crystal vibrating reed 230.AT cutting crystal vibrating reed 230 is connected through linking arm 236 with housing 235.Encourage shake extraction electrode 234 that electrode 233 draws of encouraging in the portion of shaking 231 and be formed up to the bight of housing 235 from being formed at through encouraging shake peripheral part 232 and linking arm 236.Connection electrode 222 on the base portion 220 of extraction electrode 234 and the tie point 237 in the bight that is formed on housing 235 is connected.Tie point 237 be formed on the housing 235 shown in the ellipse of dotted line among Fig. 5 (b) the bight-face of y ' axle side on.The axial length Gx of x that encourages the peripheral part 234 that shakes of AT cutting crystal vibrating reed 230 for example is 990 μ m, and the axial length Gz of z ' that encourages the peripheral part 232 that shakes of AT cutting crystal vibrating reed 230 for example is 700 μ m.In addition, making the axial length of the x that encourages the portion of shaking 231 is that Mx, the axial length of z ' are Mz.
Fig. 5 (c) is the vertical view of substrate 220.Base portion 220+be formed with the 2nd 223 that conduct engages with the housing 235 of AT cutting crystal vibrating reed 230 on the peripheral part of the face of y ' axle side, be formed with recess 225 the 2nd 223 inboard.Base portion 220+be formed with the connection electrode 222 on the tie point 237 of the extraction electrode 234 that is connected electrically in AT cutting crystal vibrating reed 230 on the 2nd 223 the part of the face of y ' axle side.
Even on AT cutting crystal vibrating reed, be formed with housing, encourage the peripheral part that shakes and also only be connected through linking arm with housing, can not produce big the variation to resulting from the useless vibrational energy of encouraging on the peripheral part that shakes.Therefore, the relation of formula (1), formula (2) and formula (3) also is applicable on the AT quartz crystal resonator element 230.
More than, though the execution mode of optimum of the present invention is illustrated, in those skilled in the art's technical scope, the present invention can be in its technical scope carries out various changes, distortion to execution mode and implements.
Claims (6)
1. mesa AT cutting crystal vibrating reed with 38.400MHz vibration has encouraging the portion of shaking and being formed on said periphery and thickness of encouraging the portion of shaking and being thinner than the said peripheral part that shakes of encouraging of encouraging the portion of shaking of rectangle, it is characterized in that,
When the said axial length of x of encouraging the crystallographic axis of the portion of shaking is Mx (μ m), saidly encourages the height h (μ m) that the portion of shaking and said encourages the section difference of the peripheral part that shakes and satisfy formula (1).
h＝(0.2×Mx)-143 (1)
2. mesa AT cutting crystal vibrating reed with 32.736MHz vibration has encouraging the portion of shaking and being formed on said periphery and thickness of encouraging the portion of shaking and being thinner than the said peripheral part that shakes of encouraging of encouraging the portion of shaking of rectangle, it is characterized in that,
When the said axial length of x of encouraging the crystallographic axis of the portion of shaking is Mx (μ m), saidly encourages the height h (μ m) that the portion of shaking and said encourages the section difference of the peripheral part that shakes and satisfy formula (2).
h＝(0.1×Mx)-87 (2)
3. one kind has encouraging the portion of shaking and being formed on said periphery of encouraging the portion of shaking and thickness and being thinner than said the shake mesa AT cutting crystal vibrating reed of peripheral part of encouraging of the portion of shaking of encouraging of rectangle, it is characterized in that,
When said thickness of encouraging the portion of shaking is t (μ m), when the said axial length of x of encouraging the crystallographic axis of the portion of shaking is Mx (μ m), saidly encourages the height h (μ m) that the portion of shaking and said encourages the section difference of the peripheral part that shakes and satisfy formula (3).
h＝(1.8×Mx/t
0.7)-92 (3)
4. according to any described mesa AT cutting crystal vibrating reed of claim 1 to 3, it is characterized in that,
Having said the encouraging of encirclement shakes peripheral part and supports said housing of encouraging the peripheral part that shakes.
5. piezo-electric device is characterized in that possessing:
Any described mesa AT cutting crystal vibrating reed of claim 1 to 3;
Be formed with recess, the base portion of the said mesa AT cutting crystal of folding and unfolding vibrating reed on said recess; And
Seal the cap of said recess.
6. piezo-electric device is characterized in that possessing:
Has the mesa AT cutting crystal vibrating reed that the claim 4 of an interarea and another interarea is put down in writing;
Has the 1st cap on the interarea that is bonded on said housing; And
Has the 2nd base portion on another interarea that is bonded on said housing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-178229 | 2010-08-07 | ||
| JP2010178229A JP5562757B2 (en) | 2010-08-07 | 2010-08-07 | Mesa-type AT-cut crystal resonator element and crystal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102377400A true CN102377400A (en) | 2012-03-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102251439A Pending CN102377400A (en) | 2010-08-07 | 2011-08-02 | Mesa-type at-cut quartz-crystal vibrating piece and the quartz-crystal device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8405286B2 (en) |
| JP (1) | JP5562757B2 (en) |
| CN (1) | CN102377400A (en) |
| TW (1) | TW201206626A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013021667A (en) * | 2011-03-23 | 2013-01-31 | Nippon Dempa Kogyo Co Ltd | Crystal device |
| JP5756712B2 (en) * | 2011-08-17 | 2015-07-29 | 日本電波工業株式会社 | Crystal device |
| JP5943186B2 (en) * | 2012-03-19 | 2016-06-29 | セイコーエプソン株式会社 | Vibrating piece, vibrator, electronic device, and electronic equipment |
| JP6338367B2 (en) * | 2013-12-24 | 2018-06-06 | 日本電波工業株式会社 | Crystal oscillator |
| US9503048B2 (en) * | 2014-11-21 | 2016-11-22 | Sii Crystal Technology Inc. | Piezoelectric vibrating reed and piezoelectric vibrator |
| JP5908622B2 (en) * | 2015-02-10 | 2016-04-26 | エスアイアイ・クリスタルテクノロジー株式会社 | Piezoelectric vibrating piece and piezoelectric vibrator |
| JP2016152477A (en) * | 2015-02-17 | 2016-08-22 | セイコーエプソン株式会社 | Vibrator, vibration device, oscillator, electronic apparatus, and mobile |
| JP6218004B2 (en) * | 2015-06-12 | 2017-10-25 | 株式会社村田製作所 | Crystal piece and crystal unit |
| JP6233621B2 (en) * | 2015-09-25 | 2017-11-22 | 株式会社村田製作所 | Crystal piece and crystal unit |
| JP6278061B2 (en) * | 2016-06-09 | 2018-02-14 | セイコーエプソン株式会社 | Vibration element, vibrator, electronic device, oscillator, and electronic device |
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| US20030218512A1 (en) * | 2002-03-26 | 2003-11-27 | Seiko Epson Corporation | Quartz resonating piece, quartz resonator, and quartz device |
| JP2006340023A (en) * | 2005-06-02 | 2006-12-14 | Epson Toyocom Corp | Mesa crystal oscillator |
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| CN101714856A (en) * | 2008-09-29 | 2010-05-26 | 日本电波工业株式会社 | Piezoelectric vibrating pieces and piezoelectric devices comprising same |
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| JP2002018698A (en) | 2000-07-07 | 2002-01-22 | Nippon Dempa Kogyo Co Ltd | Polishing method for quartz resonator |
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2011
- 2011-08-02 CN CN2011102251439A patent/CN102377400A/en active Pending
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- 2011-08-04 US US13/197,937 patent/US8405286B2/en not_active Expired - Fee Related
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| US20030218512A1 (en) * | 2002-03-26 | 2003-11-27 | Seiko Epson Corporation | Quartz resonating piece, quartz resonator, and quartz device |
| JP2006340023A (en) * | 2005-06-02 | 2006-12-14 | Epson Toyocom Corp | Mesa crystal oscillator |
| CN101123423A (en) * | 2006-08-09 | 2008-02-13 | 爱普生拓优科梦株式会社 | AT cut quartz crystal resonator element and method for manufacturing the same |
| JP2008263387A (en) * | 2007-04-11 | 2008-10-30 | Epson Toyocom Corp | Mesa piezoelectric vibration chip |
| CN101714856A (en) * | 2008-09-29 | 2010-05-26 | 日本电波工业株式会社 | Piezoelectric vibrating pieces and piezoelectric devices comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201206626A (en) | 2012-02-16 |
| JP5562757B2 (en) | 2014-07-30 |
| US20120032563A1 (en) | 2012-02-09 |
| US8405286B2 (en) | 2013-03-26 |
| JP2012039420A (en) | 2012-02-23 |
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