CN102376237A - Non-volatile display module and non-volatile display device - Google Patents

Non-volatile display module and non-volatile display device Download PDF

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Publication number
CN102376237A
CN102376237A CN2010102484699A CN201010248469A CN102376237A CN 102376237 A CN102376237 A CN 102376237A CN 2010102484699 A CN2010102484699 A CN 2010102484699A CN 201010248469 A CN201010248469 A CN 201010248469A CN 102376237 A CN102376237 A CN 102376237A
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CN
China
Prior art keywords
voltage quasi
quasi position
signal
mnemon
generation unit
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CN2010102484699A
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Chinese (zh)
Inventor
萨文志
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Qimeng Science & Technology Co Ltd
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Qimeng Science & Technology Co Ltd
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Priority to CN2010102484699A priority Critical patent/CN102376237A/en
Publication of CN102376237A publication Critical patent/CN102376237A/en
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Abstract

The invention relates to a non-volatile display module comprising a display panel and a driving circuit. The display panel comprises a baseplate which is provided with at least one scanning line, at least one data wire and at least one thin film transistor. The thin film transistor is positioned in an intersection region of the scanning line and the data wire. The driving circuit comprises a memory unit, a voltage level generation unit and a voltage level selection unit. The memory unit is used for receiving and storing at least one image control signal according to a frequency signal. The voltage level generation unit is used for generating multiple voltage level signals. The voltage level selection unit is respectively electrically connected with the scanning line, the data wire, the memory unit and the voltage level generation unit and used for transmitting one of the voltage level signals to the scanning line or the data wire according to the image control signal. The non-volatile display module can simultaneously process the signals transmitted by the scanning line and the data wire by virtue of the driving circuit with the simple architecture, thereby reducing the number of driving components, saving the space and further reducing the production cost.

Description

Non-volatile display module and non-volatile display device
Technical field
The present invention is about a kind of display module and display device, especially in regard to a kind of non-volatile display module and non-volatile display device.
Background technology
Display device is by early stage cathode-ray tube (CRT) (cathode ray tube; CRT) display device is developed to liquid crystal display (liquid crystal display now; LCD) device, Organic Light Emitting Diode (organic light emitting diode; OLED) display device and Electronic Paper (E-Paper) display device, its volume and weight are all significantly dwindled, and are widely used on the products such as communication, information and consumer electronics.
Please with reference to shown in Figure 1, known display device for example is example with the liquid crystal indicator, and it comprises a LCD MODULE 1, and LCD MODULE 1 has a display panels 11, a data drive circuit 12 and scan driving circuit 13.Data drive circuit 12 is by a plurality of data line D 11~D 1nElectrically connect with display panels 11, scan drive circuit 13 is by a plurality of sweep trace S 11~S 1mElectrically connect with display panels 11.
Please with reference to shown in Figure 2, data drive circuit 12 comprises a shift cache unit 122, a first order latch lock unit 123, a second level latch lock unit 124 and an accurate offset units 125.Shift cache unit 122 electrically connects with first order latch lock unit 123, and second level latch lock unit 124 electrically connects with the accurate offset units 125 of first order latch lock unit 123 and position respectively.
Please be simultaneously with reference to shown in Figure 3, shift cache unit 122 is according to an initial pulse wave (Start pulse) signal A 01And one frenquency signal CK produce shift register signal A 11~A 1nAnd be sent to first order latch lock unit 123.
First order latch lock unit 123 is according to shift register signal A 11~A 1nReceive an image signal A 02Image signal A wherein 02Comprise a plurality of image datas, and be stored in the first order latch lock unit 123.Second level latch lock unit 124 is according to a breech lock activation (latch enable) signal A 03With image signal A 02In acquisition to the second level latch lock unit 124.The accurate offset units 125 in position will be stored in the image signal A in the second level latch lock unit 124 02Convert a plurality of display signals to, and via corresponding data line D 11~D 1nDisplay signal is transferred to display panels 11 show a display frame.
Along with development of technology, there is so-called non-volatile materials to be used in the display device at present.Non-volatile materials for example is electrophoresis property material, electric wet materials, cholesterol liquid crystal or to row row liquid crystal.Usually the display device of using non-volatile materials all is to advocate little, the portative advantage of volume; Therefore if can be under the framework of existing display device; Data drive circuit 12 in the integration display module and scan drive circuit 13 are to reduce component count; Can make display device more save space or more frivolous, and then save production cost.
Therefore, how a kind of non-volatile display module non-volatile display device that can reduce the driven unit number is provided, just now one of important topic.
Summary of the invention
The purpose of this invention is to provide a kind of non-volatile display module and non-volatile display device that can reduce the driven unit number.
The present invention can adopt following technical scheme to realize.
The present invention provides a kind of non-volatile display module, comprises a display panel and one drive circuit.Display panel has a substrate, and on substrate, is provided with at least one sweep trace, at least one data line and at least one thin film transistor (TFT).The thin film transistor (TFT) position is in an interlaced area of sweep trace and data line.Driving circuit has a mnemon, a voltage quasi position generation unit and a voltage quasi position selected cell.Mnemon receives and stores at least one image controlling signal according to a frenquency signal.The voltage quasi position generation unit produces a plurality of voltage quasi position signals.The voltage quasi position selected cell electrically connects with sweep trace, data line, mnemon and voltage quasi position generation unit respectively, and one of them is sent to an one scan line or a data line to select said voltage quasi position signal according to the stored image controlling signal of mnemon.
In one embodiment of this invention; Said mnemon has at least one offset buffer and at least one latch unit; Wherein offset buffer receives said image controlling signal according to said frenquency signal; Latch unit and said offset buffer electrically connect, and receive said image controlling signal according to a breech lock signal.
In one embodiment of this invention, said image controlling signal comprises a plurality of image signals and a plurality of scanning signal.
In one embodiment of this invention, said voltage quasi position generation unit is one direct current/direct current quasi-position converter.
In one embodiment of this invention, at least a portion of non-volatile display module is made with a monocrystalline processing procedure, a polycrystalline processing procedure or an amorphous processing procedure.
In one embodiment of this invention, said mnemon, said voltage quasi position generation unit and said voltage quasi position selected cell are arranged in the integrated circuit.
In one embodiment of this invention, said mnemon and said voltage quasi position selected cell are arranged in the integrated circuit.
In addition, the present invention provides a kind of non-volatile display device, and it comprises a non-volatile display module.Non-volatile display module has a display panel and one drive circuit.Driving circuit has a mnemon, a voltage quasi position generation unit and a voltage quasi position selected cell.Mnemon receives at least one image controlling signal according to a frenquency signal.The voltage quasi position generation unit produces a plurality of voltage quasi position signals.Voltage quasi position selected cell and sweep trace, data line, mnemon and voltage quasi position generation unit electrically connect, and one of them is sent to an one scan line or a data line to select said voltage quasi position signal according to the stored image controlling signal of mnemon.
In one embodiment of this invention; Said mnemon has at least one offset buffer and at least one latch unit; Wherein offset buffer receives said image controlling signal according to said frenquency signal; Latch unit and said offset buffer electrically connect, and receive said image controlling signal according to a breech lock signal.
In one embodiment of this invention, said image controlling signal comprises a plurality of image signals and a plurality of scanning signal.
In one embodiment of this invention, said voltage quasi position generation unit is one direct current/direct current quasi-position converter.
In one embodiment of this invention, at least a portion of non-volatile display device is made with a monocrystalline processing procedure, a polycrystalline processing procedure or an amorphous processing procedure.
In one embodiment of this invention, said mnemon, said voltage quasi position generation unit and said voltage quasi position selected cell are arranged in the integrated circuit.
In one embodiment of this invention, said mnemon and said voltage quasi position selected cell are arranged in the integrated circuit.
By technique scheme, non-volatile display module of the present invention and non-volatile display device have advantage at least:
The driving circuit that has mnemon, voltage quasi position generation unit and a voltage quasi position selected cell according to non-volatile display module of the present invention and non-volatile display device utilization is handled the signal that sweep trace and data line transmit, to produce display frame.Compare with technique known, non-volatile display device of the present invention also can use the driving circuit of simple architecture comparatively can handle the signal that sweep trace and data line transmit simultaneously except the scan drive circuit and data drive circuit of integrating traditional.Therefore non-volatile display module of the present invention and non-volatile display device can reduce the driven unit number with the saving space, and then save production cost.
Description of drawings
Fig. 1 is the synoptic diagram of known display device;
Fig. 2 is the synoptic diagram of known data-driven electricity;
Fig. 3 is the sequential control figure of the data drive circuit of known display device;
Fig. 4 is the synoptic diagram of the non-volatile display device of the preferred embodiment of the present invention;
Fig. 5, Fig. 6 and Fig. 7 are that the multiplexer of display device among Fig. 4 and the circuit of voltage quasi position generation unit connect configuration diagram; And
Fig. 8 is a sequential chart of the accurate position of voltage quasi position generation unit output voltage signal in Fig. 7 framework.
The main element symbol description:
1: LCD MODULE
11: display panels
12: data drive circuit
122: shift cache unit
123: first order latch lock unit
124: second level latch lock unit
125: the accurate offset units in position
13: scan drive circuit
2: non-volatile display module
3: display panel
31: substrate
3 11~3 Mn: the picture element unit
4: driving circuit
41: mnemon
411: offset buffer
412: latch unit
42,42a: voltage quasi position generation unit
43: the voltage quasi position selected cell
431,431a: multiplexer
A 01: initial pulse wave signal
A 02: image signal
A 03: the breech lock enable signal
A 11~A 1n: the shift register signal
A 21: the image controlling signal
A 31~A 3m: first drives signal
A 41~A 4n: second drives signal
A 51: the breech lock signal
A 61~A 64: the voltage quasi position signal
CK: frenquency signal
D 11~D 1n, D 21~D 2n: data line
S 11~S 1m, S 21~S 2m: sweep trace
T 1~T 5: the time
TFT: thin film transistor (TFT)
Embodiment
Below will a kind of non-volatile display module and non-volatile display device according to the preferred embodiment of the present invention be described with reference to correlative type.
So-called non-volatile display device refers to that display device has at least two stable states, and it can maintain the tens of at least milliseconds of said stable state after removing power supply.In addition, the optic regulating material in the display device can comprise electrophoresis liquid, electric moist material, cholesterol (cholesterol) liquid crystal or nematic (Nematic) liquid crystal.
Please with reference to shown in Figure 4, the non-volatile display device of the preferred embodiment of the present invention comprises a non-volatile display module 2.Non-volatile display module 2 comprises a display panel 3 and one drive circuit 4.In the present embodiment, driving circuit 4 is via a plurality of sweep trace S 21~S 2mAnd a plurality of data line D 21~D 2nElectrically connect with display panel 3.
Display panel 3 has a substrate 31, at least one sweep trace, at least one data line and at least one thin film transistor (TFT) TFT.Wherein thin film transistor (TFT) TFT is arranged on the interlaced area of data line and sweep trace, and is electrically connected to an electrode, and wherein interlaced area and thin film transistor (TFT) TFT are referred to as a picture element unit.The arrangement mode of picture element unit can be one dimension matrix or two-dimensional matrix pattern.In the present embodiment, display panel 3 is to comprise a plurality of picture elements unit 3 11~3 MnBe the example explanation, its arrangement mode is the two-dimensional matrix form.On display panel 3, sweep trace S 21~S 2mAnd data line D 21~D 2nBe to be crisscross arranged, and form a plurality of interlaced area, and each picture element unit 3 11~3 MnBe arranged on corresponding interlaced area.
Driving circuit 4 comprises a mnemon 41, a voltage quasi position generation unit 42 and a voltage quasi position selected cell 43.Voltage quasi position selected cell 43 respectively with sweep trace S 21~S 2m, data line D 21~D 2n, voltage quasi position generation unit 42 and mnemon 41 electrically connects.
Mnemon 41 has an offset buffer 411 and a latch unit 412, and offset buffer 411 electrically connects with latch unit 412.Voltage quasi position selected cell 43 has at least one multiplexer, and the voltage quasi position selected cell 43 of present embodiment has a plurality of multiplexers 431, and each multiplexer 431 respectively with mnemon 41, voltage quasi position generation unit 42 and corresponding sweep trace S 21~S 2mOr corresponding data line D 21~D 2nElectrically connect.
When driving circuit 4 was driven, offset buffer 411 received image controlling signal A according to a frenquency signal CK 21, image controlling signal A wherein 21Comprise that a plurality of first drives signal A 31~A 3mAnd a plurality of second driving signal A 41~A 4n
Latch unit 412 is according to a breech lock signal A 51Drive signal A with first 31~A 3mAnd second drive signal A 41~A 4nCapture to latch unit 412, and be sent to voltage quasi position selected cell 43.In addition, offset buffer 411 receives image controlling signal A with the sequence mode 21, and latch unit 412 drives signal A with mode arranged side by side with first 31~A 3mAnd second drive signal A 41~A 4nBe sent to voltage quasi position selected cell 43.
Be simplified illustration, below will with voltage quasi position generation unit 42, multiplexer 431 and with the sweep trace S of its electric connection 21For the accurate position of example account for voltage selected cell 43 can be according to image controlling signal A 21One of them is sent to sweep trace S to make the voltage quasi position signal 21
Please with reference to shown in Figure 5, voltage quasi position generation unit 42 exportable four voltage quasi position signal A 61~A 64, and be sent to multiplexer 431.Wherein voltage quasi position generation unit 42 for example is a DC-DC voltage quasi position converter, and voltage quasi position signal A 61~A 64Can be respectively a direct current voltage signal, for example be respectively 30V ,-10V, 20V ,-5V.
Because multiplexer 431 and sweep trace S 21Corresponding, therefore, image controlling signal A 21Drive signal A with first 31Be example.At this moment, multiplexer 431 can drive signal A according to first 31And with voltage quasi position signal A 61~A 64One of them is sent to sweep trace S 21, with decision sweep trace S 21The voltage quasi position of the scanning signal that transmits.As sweep trace S 21When transmitting the voltage quasi position of 30V or 20V, but its conducting picture element 3 11Transistor; As sweep trace S 21Transmission-10V or-during the voltage quasi position of 5V, it can end picture element 3 11Transistor.
Yet present embodiment is not that the accurate position of deboost generation unit 42 only produces four voltage quasi position signal A 61~A 64, the person of ordinary skill in the field knows that the output of voltage quasi position generation unit 42 can design according to demand, does not limit the signal quantity and the accurate position height of its output at this.
In addition, the multiplexer 431 and sweep trace S of part 21Electrically connect, and another multiplexer 431 and data line D partly 21~D 2nElectrically connect.Be simplified illustration, below will with voltage quasi position generation unit 42, multiplexer 431 and with the data line D of its electric connection 21For the accurate position of example account for voltage selected cell 43 can be according to image controlling signal A 21One of them is sent to data line D and make the voltage quasi position signal 21
Please with reference to shown in Figure 6, voltage quasi position generation unit 42 exportable four voltage quasi position signal A 61~A 64, and be sent to multiplexer 431.Wherein, voltage quasi position signal A 61~A 64Can be respectively the DC voltage signal, for example be respectively 30V ,-10V, 20V ,-5V.
Because multiplexer 431 and data line D 21Corresponding, therefore, image controlling signal A 21Drive signal A with second 41Be example.At this moment, multiplexer 431 can drive signal A according to second 41And with voltage quasi position signal A 61~A 64One of them is sent to data line D 21, with determination data line D 21The voltage quasi position of the image signal that transmits.When picture element 3 11In transistor when being conducting state, data line D 21The image signal that transmits can write picture element 311, and by the voltage quasi position of image signal (30V ,-10V, 20V ,-5V) GTG of control display frame.
Hold the above, the said voltage quasi position signal A that voltage quasi position generation unit 42 is exported 61~A 64Except that transferring to the multiplexer 431 via different output terminals or lead respectively, also can be as shown in Figure 7, said voltage quasi position signal A 61~A 64Same output terminal or lead via voltage quasi position generation unit 42a export multiplexer 431a to.Said voltage quasi position signal A as shown in Figure 8, that voltage quasi position generation unit 42a is exported 61~A 64Utilize temporal differentiation and in different time, transfer to multiplexer 431a, for example in time T by same output terminal or lead 1The accurate position of output voltage signal A 61, in time T 2The accurate position of output voltage signal A 62, in time T 3The accurate position of output voltage signal A 63, in time T 4The accurate position of output voltage signal A 64, in time T 5After export said voltage quasi position signal A in proper order 61~A 64, so the order of its output (the big minispread of voltage quasi position) does not limit at this.
In addition, on real the work, for effective reduction volume, at least a portion of driving circuit 4 is arranged on an integrated circuit with the monocrystalline processing procedure, and (integrated circuit is IC) in the chip, or with a polycrystalline processing procedure or an amorphous processing procedure and picture element unit 3 11~3 MnBe arranged on a same substrate.At this, the amorphous processing procedure can be an amorphous silicon film transistor processing procedure or an OTFT processing procedure.Can also be a mixed form, for example mnemon 41 be arranged in the IC chip with the single crystal semiconductor process technique, and a voltage quasi position generation unit 42 and a voltage quasi position selected cell 43 are with polycrystalline processing procedure or amorphous processing procedure and picture element unit 3 11~3 MnBe arranged on a same substrate.Briefly; Can mnemon 41, voltage quasi position generation unit 42 and voltage quasi position selected cell 43 be incorporated in the integrated circuit; Or only mnemon 41 and voltage quasi position selected cell 43 are incorporated in the integrated circuit, wherein integrated circuit can be the monocrystalline integrated circuit.
In sum; According to non-volatile display module of the present invention and non-volatile display device; The driving circuit that utilization has mnemon, voltage quasi position generation unit and a voltage quasi position selected cell is handled the signal that sweep trace and data line transmit, to produce display frame.Compare with known technology, non-volatile display device of the present invention also can use the driving circuit of simple architecture comparatively can handle the signal that sweep trace and data line transmit simultaneously except the scan drive circuit and data drive circuit of integrating traditional.Therefore, non-volatile display module of the present invention and non-volatile display device can reduce the driven unit number with the saving space, and then save production cost.
The above only is an illustrative, and non-limiting.Anyly do not break away from spirit of the present invention and category, and, all should be included in the claim institute restricted portion its equivalent modifications of carrying out or change.

Claims (14)

1. a non-volatile display module is characterized in that, comprising:
One display panel has a substrate, and said substrate is provided with at least one sweep trace, at least one data line and at least one thin film transistor (TFT), and said thin film transistor (TFT) position is in an interlaced area of said sweep trace and said data line; And
One drive circuit has:
One mnemon receives and stores at least one image controlling signal according to a frenquency signal;
One voltage quasi position generation unit produces a plurality of voltage quasi position signals; And
One voltage quasi position selected cell; Electrically connect with said sweep trace, said data line, said mnemon and said voltage quasi position generation unit respectively, and one of them is sent to an one scan line or a data line to select said a plurality of voltage quasi position signal according to the stored image controlling signal of said mnemon.
2. display module according to claim 1 is characterized in that, said mnemon has:
At least one offset buffer, the said frenquency signal of foundation is to receive said image controlling signal; And
At least one latch unit electrically connects with said offset buffer, and receives said image controlling signal according to a breech lock signal.
3. display module according to claim 1 is characterized in that, said image controlling signal comprises a plurality of image signals and a plurality of scanning signal.
4. display module according to claim 1 is characterized in that, said voltage quasi position generation unit is one direct current/direct current quasi-position converter.
5. display module according to claim 1 is characterized in that, its at least a portion is made with a monocrystalline processing procedure, a polycrystalline processing procedure or an amorphous processing procedure.
6. display module according to claim 1 is characterized in that, said mnemon, said voltage quasi position generation unit and said voltage quasi position selected cell are arranged in the integrated circuit.
7. display module according to claim 1 is characterized in that, said mnemon and said voltage quasi position selected cell are arranged in the integrated circuit.
8. a non-volatile display device is characterized in that, comprising:
One non-volatile display module, it has:
One display panel has a substrate, and said substrate is provided with at least one sweep trace, at least one data line and at least one thin film transistor (TFT), and said thin film transistor (TFT) position is in an interlaced area of said sweep trace and said data line; And
One drive circuit has:
One mnemon receives and stores at least one image controlling signal according to a frenquency signal;
One voltage quasi position generation unit produces a plurality of voltage quasi position signals; And
One voltage quasi position selected cell; Electrically connect with said sweep trace, said data line, said mnemon and said voltage quasi position generation unit respectively, and one of them is sent to an one scan line or a data line to select said a plurality of voltage quasi position signal according to the stored image controlling signal of said mnemon.
9. display device according to claim 8 is characterized in that, said mnemon has:
At least one offset buffer receives said image controlling signal according to said frenquency signal; And
At least one latch unit electrically connects with said offset buffer, and receives said image controlling signal according to a breech lock signal.
10. display device according to claim 8 is characterized in that, said image controlling signal comprises a plurality of image signals and a plurality of scanning signal.
11. display device according to claim 8 is characterized in that, said voltage quasi position generation unit is one direct current/direct current quasi-position converter.
12. display device according to claim 8 is characterized in that, its at least a portion is made with a monocrystalline processing procedure, a polycrystalline processing procedure or an amorphous processing procedure.
13. display device according to claim 8 is characterized in that, said mnemon, said voltage quasi position generation unit and said voltage quasi position selected cell are arranged in the integrated circuit.
14. display device according to claim 8 is characterized in that, said mnemon and said voltage quasi position selected cell are arranged in the integrated circuit.
CN2010102484699A 2010-08-05 2010-08-05 Non-volatile display module and non-volatile display device Pending CN102376237A (en)

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CN104751766A (en) * 2015-04-08 2015-07-01 京东方科技集团股份有限公司 Display panel, driving method thereof and display device
CN110379386A (en) * 2019-06-11 2019-10-25 惠科股份有限公司 Display panel and display

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Application publication date: 20120314