CN102375329B - Test mask and method for measuring exposure system parameters therewith - Google Patents

Test mask and method for measuring exposure system parameters therewith Download PDF

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CN102375329B
CN102375329B CN 201010259202 CN201010259202A CN102375329B CN 102375329 B CN102375329 B CN 102375329B CN 201010259202 CN201010259202 CN 201010259202 CN 201010259202 A CN201010259202 A CN 201010259202A CN 102375329 B CN102375329 B CN 102375329B
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hole shape
mentioned
image
shape mark
place
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CN102375329A (en
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段立峰
马明英
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Abstract

The invention relates to a test mask, comprising an upper substrate and a lower substrate. The surface of the upper substrate is provided with two first square hole marks with side length of l1, with a distance of m between the two square hole marks. The upper surface of the lower substrate is equipped with a second square hole mark with side length of l2, which is greater than or equal to the sum of 2l1+m, and the position of the second square hole mark enables the second square hole mark to receive the light sent from the first square hole mark completely. The lower surface of the lower substrate is provided with a concave lens, which is located at a position corresponding to one first square hole mark. The method for measuring exposure system parameters with the test mask consists of the steps of: conducting imaging at two different positions and collecting their light intensity, carrying out fitting so as to obtain radiuses of light intensity distributions at the two different positions, then making use of the radius values to obtain a lighting numerical aperture and a projection objective numerical aperture, as well as the position of an optimal focal plane.

Description

A kind of test mask and utilize this mask to carry out the method for exposure system parameter measurement
Technical field
The present invention relates to a kind of test mask and utilize this mask to carry out the method for the parameter measurement of exposure system.
Background technology
Illumination numerical aperture and optimal focal plane of projection objective position are the key parameters of exposure system of photo-etching machine.In litho machine, illumination numerical aperture adopts following method to measure usually: the optimal focal plane position of at first having demarcated projection objective, secondly with a pin-hole imaging on the mask face in image planes, at distance optimal focal plane of projection objective certain distance f place, use the light intensity on the photodetector measurement XY plane, the light distribution that utilization measures fits the radius that obtains light distribution, utilizes the radius of light distribution and out of focus apart from f, obtains the illumination numerical aperture size.The obvious shortcoming of the method is at first to determine that out of focus apart from f, just can calculate illumination numerical aperture, in case out of focus is offset apart from the unknown or optimal focal plane, will make the illumination numerical aperture miscount.
The optimal focal plane of projection objective position can adopt the method for exposure to measure, and namely carries out intensive lines exposure in different positions of focal plane, after the development, uses optical microscope or scanning electron microscope to obtain z corresponding to the top-quality intensive lines of exposure to the position.Utilize at last the z that measures to obtain the optimal focal plane of projection objective to position calculation.Because the method needs the supplementary instruments such as optical microscope or scanning electron microscope, so measuring speed is slow, it is higher to measure cost, simultaneously because the impact of manual operation and artificial reading causes this commercial measurement precision lower.
Summary of the invention
The present invention proposes a kind of exposure system measurement method of parameters, by mask design, can measure simultaneously illumination numerical aperture, numerical aperture of projection objective and optimal focal plane of projection objective.The method needn't labeling projection object lens optimal focal plane when measuring illumination numerical aperture, illumination numerical aperture is measured and is calculated the impact that not demarcated by optimal focal plane.In addition, the method can utilize the illumination numerical aperture that measures to obtain optimal focal plane of projection objective, so that the measuring process of optimal focal plane of projection objective is more simple.
Test mask of the present invention, comprise up and down two substrates, the upper surface of upper substrate has the first mark, described the first mark is comprised of the first hole shape mark and the second hole shape mark, the upper surface of lower substrate has the 3rd hole shape mark, and described the 3rd hole shape mark can all receive from the light of described the first mark outgoing, and the lower surface of lower substrate has concavees lens, be positioned at the position corresponding to above-mentioned the first hole shape mark, the light by the 3rd hole shape mark outgoing is partly by above-mentioned concavees lens.
Wherein, described the first hole shape mark, the second hole shape mark and the 3rd hole shape mark are square.
Wherein, described the first hole shape mark, the second hole shape mark and the 3rd hole shape mark are circle.
Wherein, the length of side of described the first hole shape mark is l 1, the length of side of described the second hole shape mark is l 2, the length of side of described the 3rd hole shape mark is l 3, the distance between described the first hole shape mark center and described the second hole shape mark center is m, l 3〉=(l 1+ l 2)/2+m.
Wherein, the radius of described the first hole shape mark is r a, the radius of described the second hole shape mark is r b, the radius of described the 3rd hole shape mark is r c, the distance between described the first hole shape mark center and described the second hole shape mark center is m, r c〉=(r a+ r b+ m)/2.
A kind of method of utilizing above-mentioned test mask to measure the exposure system parameter, the method has following step:
A, place test mask at the projection objective object plane place of exposure system, make the light beam that is incident on the test mask be divided into the first light beam and the second light beam by above-mentioned the first mark, the first light beam forms the 3rd light beam by above-mentioned concavees lens, the scattering angle of above-mentioned the 3rd light beam is greater than the numerical aperture of projection objective corresponding angle, above-mentioned the second light beam and above-mentioned the 3rd light beam are incident to projection objective, and are imaged as respectively the first image and the second image by projection objective;
B, make work stage along the axis movement of projection objective to the primary importance place, the light distribution that utilizes the photodetector on the work stage to measure above-mentioned the first image in primary importance place and above-mentioned the second image;
C, make work stage along the axis movement of projection objective to second place place, the light distribution that utilizes the photodetector on the work stage to measure above-mentioned the first image in second place place and above-mentioned the second image, the distance b between record primary importance and the second place;
D, match is carried out in the light distribution of above-mentioned the first image in primary importance place and above-mentioned the second image, obtain the radius of the light distribution of above-mentioned the first image in primary importance place and above-mentioned the second image, be designated as respectively r3, r4, match is carried out in light distribution to above-mentioned the first image in second place place and above-mentioned the second image, obtain the radius of the light distribution of above-mentioned the first image in second place place and above-mentioned the second image, be designated as respectively r1, r2;
E, according to work stage in the light distribution radius r 1 of above-mentioned primary importance place the first image, the light distribution radius r 2 of the second image, work stage is in the light distribution radius r 3 of said second position place the first image, the light distribution radius r 4 of the second image and the optimal focal plane of the distance b compute illumination numerical aperture between above-mentioned primary importance and the said second position or numerical aperture of projection objective or exposure system.
Wherein, the plane at above-mentioned the 3rd hole shape mark place is positioned at the projection objective optimal object plane.
Wherein,
NA illu min ation = t 1 1 + t 1 2 t 1 = r 1 + r 3 b , NA wherein Illu min ationBe illumination numerical aperture.
Wherein,
NA PO = t 2 1 + t 2 2 t 2 = r 2 + r 4 b , NA wherein POBe numerical aperture of projection objective.
Wherein, the optimal focal plane of exposure system and the distance of described primary importance are f, f = b · r 2 r 1 + r 2 .
Than prior art, the present invention has the following advantages:
Need not to demarcate optimal focal plane during 1, because of measurement, make measuring process simple;
The z that adopts during 2, because of the evaluation aperture is irrelevant to data and optimal focal plane, thereby its result of calculation is not subjected to optimal focal plane to demarcate the impact of residual error, makes result of calculation more accurate;
3, can obtain simultaneously illumination numerical aperture and numerical aperture of objective.
Description of drawings
Figure 1 shows that the structural representation of the exposure system parameter testing mask that the present invention uses.
Figure 2 shows that the illumination numerical aperture measurement structural representation that the present invention uses.
Figure 3 shows that optimal focal plane calculating synoptic diagram of the present invention.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention by reference to the accompanying drawings.For convenience of description and highlight the present invention, omitted existing associated components in the prior art in the accompanying drawing, and will omit the description to these well-known components.
Figure 1 shows that the structural representation of the exposure system parameter testing mask 207 that the present invention uses.Test mask 207 comprises substrate 201 and substrate 202, comprise a hole shape mark 205 in the substrate 202, comprise two hole shape marks 206 in the substrate 201, the mid point of two hole shape mark center lines and hole shape mark 205 center superpositions in the substrate 202 are placed in the substrate 201.Two hole shape label size in the substrate 201 are identical, are square hole.Square hole in the substrate 202 also is square hole.If the square hole length of side in the substrate 201 is d, the distance at two square hole centers is 1, and then the square hole length of side in the substrate 202 is 1+d.One of them hole shape mark of corresponding two hole shape marks of substrate 202 lower surfaces 206 is placed concavees lens 203, concavees lens 203 be centered close to 1/4 length of side position apart from hole shape mark 205 centers.In test process, the plane at mark 205 places on the test mask 207 is positioned over the optimal object plane position.Above-mentioned square hole mark also can adopt circular hole to substitute, and perhaps adopts other irregular hole shape marks, as long as the light that satisfies by two hole shape mark 206 outgoing can be received fully by hole shape mark 205.When two hole shape marks 206 and hole shape mark 205 were square, the length of side of two hole shape marks 206 was respectively l 1And l 2, the length of side of hole shape mark 205 is l 3, the distance in two hole shape marks 206 between two hole shape mark center is m, satisfies l 3〉=(l 1+ l 2)/2+m.When two hole shape marks 206 and hole shape mark 205 were circle, it was r that the radius of two hole shape marks 206 is respectively radius aAnd r b, the radius of hole shape mark 205 is r c, the distance in two hole shape marks 206 between two hole shape mark center is m, satisfies r c〉=(r a+ r b+ m)/2l 1And l 2
Figure 2 shows that the illumination numerical aperture measurement structural representation that the present invention uses.Wherein, place test mask 207 in projection objective 302 object plane positions, more excellent situation is the optimal object plane that the plane at hole shape mark 205 places is positioned at projection objective.Light beam through mask is divided into two parts, and wherein a part of light beam is because the disperse function of concavees lens makes beam angle greater than projection objective 302 numerical aperture corresponding angles.Another part light beam is directly incident on projection objective 302.This two parts light beam is through forming the picture of two hole shape marks 206 behind the projection objective 302.Use z to make work stage 304 move to 310 positions, plane to measuring system, and the light distribution of adopting the photodetector 303 on the work stage 304 to measure in this plane.After the luminous intensity distribution measurement on the plane 310 is complete, with work stage at z to moving to 307 places, plane, 307 places on the plane utilize the light intensity on photodetector 303 measurement planes 307 in the same way, and utilize z to measuring system record plane 307 to the distance b between the plane 310.Will be on the plane light distribution of 307 places record carry out match, obtain the radius of plane 307 places light distribution, be designated as r 1, r 2, will be on the plane light distribution of 310 places record carry out match, the radius of plane 310 places light distribution is recorded as r 3, r 4Because the light intensity that 307 places record on the plane and the light intensity that 310 places record on the plane all are light intensity of two hole shape mark 206 imagings, so its light distribution is carried out after the match two light distribution radiuses being arranged.Utilize formula (1) and formula (2) compute illumination numerical aperture and numerical aperture of projection objective.
NA illu min ation = t 1 1 + t 1 2 t 1 = r 1 + r 3 b - - - ( 1 )
NA PO = t 2 1 + t 2 2 t 2 = r 2 + r 4 b - - - ( 2 )
Wherein, NA Illu min ationBe illumination numerical aperture, NA POBe numerical aperture of projection objective.
Figure 3 shows that optimal focal plane calculating synoptic diagram of the present invention.If the optimal focal plane of projection objective 302 is positioned at 309 places, plane of anomaly face 310 distances 311, if the size of distance 311 is f, the size of distance 308 is b, and then plane 307 is b-f apart from the distance on plane 309.Utilize following formula 3 can calculate the optimal focal plane position of projection objective 302
f = b · r 2 r 1 + r 2 - - - ( 3 ) .
Size dimension when two the hole shape marks 206 that adopt among the present invention are square is 120 μ m, and the spacing of two square holes is 20mm.Size dimension when hole shape mark 205 is for square in the substrate 202 is 20.12mm.Projection objective magnification was 4 when the party's aperture projection objective 302 was imaged on the optimal focal plane place, work stage drives photodetector 103, and 110 places carry out luminous intensity measurement on the plane, measure complete after, work stage is moved to 107 places, plane carry out identical measurement, the distance between plane 107 and the plane 110 can be set to 1mm.According to the light distribution in plane 110 light distribution that measure and the plane 107, match obtains its light distribution radius r respectively 1, r 2, r 3, r 4, can obtain illumination numerical aperture size and numerical aperture of projection objective according to radius r 1, r2 and r3, r4 and formula (1) and formula (2).And then calculate the optimal focal plane position according to formula (3).
Described in this instructions is several preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.

Claims (7)

1. test mask, it is characterized in that comprising up and down two substrates, the upper surface of upper substrate has the first mark, described the first mark is comprised of the first hole shape mark and the second hole shape mark, the upper surface of lower substrate has the 3rd hole shape mark, described the 3rd hole shape mark can all receive from the light of described the first mark outgoing, the lower surface of lower substrate has concavees lens, be positioned at the position corresponding to above-mentioned the first hole shape mark, the light by the 3rd hole shape mark outgoing is partly by above-mentioned concavees lens.
2. test mask according to claim 1 is characterized in that described the first hole shape mark, the second hole shape mark and the 3rd hole shape mark are square.
3. test mask according to claim 1 is characterized in that described the first hole shape mark, the second hole shape mark and the 3rd hole shape mark are circle.
4. test mask according to claim 2, the length of side that it is characterized in that described the first hole shape mark is l 1, the length of side of described the second hole shape mark is l 2, the length of side of described the 3rd hole shape mark is l 3, the distance between described the first hole shape mark center and described the second hole shape mark center is m, l 3〉=(l 1+ l 2)/2+m.
5. test mask according to claim 3, the radius that it is characterized in that described the first hole shape mark is r a, the radius of described the second hole shape mark is r b, the radius of described the 3rd hole shape mark is r c, the distance between described the first hole shape mark center and described the second hole shape mark center is m, r c〉=(r a+ r b+ m)/2.
6. method of utilizing the described test mask of claim 1 to 5 any one to measure the exposure system parameter, the method has following step:
A, place test mask at the projection objective object plane place of exposure system, make the light beam that is incident on the test mask be divided into the first light beam and the second light beam by above-mentioned the first mark, the first light beam forms the 3rd light beam by above-mentioned concavees lens, the scattering angle of above-mentioned the 3rd light beam is greater than the numerical aperture of projection objective corresponding angle, above-mentioned the second light beam and above-mentioned the 3rd light beam are incident to projection objective, and are imaged as respectively the first image and the second image by projection objective;
B, make work stage along the axis movement of projection objective to the primary importance place, the light distribution that utilizes the photodetector on the work stage to measure above-mentioned the first image in primary importance place and above-mentioned the second image;
C, make work stage along the axis movement of projection objective to second place place, the light distribution that utilizes the photodetector on the work stage to measure above-mentioned the first image in second place place and above-mentioned the second image, the distance b between record primary importance and the second place;
D, match is carried out in the light distribution of above-mentioned the first image in primary importance place and above-mentioned the second image, obtained the radius of the light distribution of above-mentioned the first image in primary importance place and above-mentioned the second image, be designated as respectively r 1, r 2, match is carried out in the light distribution of above-mentioned the first image in second place place and above-mentioned the second image, obtain the radius of the light distribution of above-mentioned the first image in second place place and above-mentioned the second image, be designated as respectively r 3, r 4
E, according to the light distribution radius r of work stage at above-mentioned primary importance place the first image 1, the second image the light distribution radius r 2, work stage is in the light distribution radius r of said second position place the first image 3, the second image the light distribution radius r 4And the optimal focal plane of the distance b compute illumination numerical aperture between above-mentioned primary importance and the said second position or numerical aperture of projection objective or exposure system, computing method are as follows:
NA liiu min ation = t 1 1 + t 1 2 t 1 = r 1 + r 3 b , NA wherein Illu min ationBe illumination numerical aperture,
NA PO = t 2 1 + t 2 2 t 2 = r 2 + r 4 b , NA wherein POBe numerical aperture of projection objective,
Wherein f is the optimal focal plane of exposure system and the distance of described primary importance.
7. the method for measurement exposure system parameter according to claim 6 is characterized in that, the plane at above-mentioned the 3rd hole shape mark place is positioned at the projection objective optimal object plane.
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CN103439868B (en) * 2013-09-01 2015-06-24 中国科学院光电技术研究所 Device and method for measuring numerical aperture of projection objective
CN106707684B (en) * 2015-08-05 2019-12-13 中国科学院微电子研究所 Focal plane position testing mask and method for determining focal plane position
CN108508705B (en) * 2017-02-28 2020-06-16 上海微电子装备（集团）股份有限公司 Focal plane measuring device and method for projection objective and exposure system
DE102017219217B4 (en) * 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masks for microlithography, methods for determining edge positions of the images of the structures of such a mask and system for carrying out such a method
CN109959342B (en) * 2017-12-26 2021-04-13 长春长光华大智造测序设备有限公司 Method and device for detecting numerical aperture of objective lens
CN108803248B (en) * 2018-05-03 2024-04-02 中国科学院光电研究院 On-line detection device and method for numerical aperture of projection objective

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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai

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