CN102364618A - Multilayer film material with vertical magnetic anisotropy - Google Patents
Multilayer film material with vertical magnetic anisotropy Download PDFInfo
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Abstract
The invention relates to a multilayer film material with vertical magnetic anisotropy. The multilayer film material comprises a basal piece, a core buffer layer, an amorphous ferromagnetic layer and an oxide barrier layer. In the multilayer film material with a 'CoFeB/MgO' interface and the vertical magnetic anisotropy, Ta in a 'Ta/CoFeB/MgO' structure is replaced by Mo or Hf, so the vertical magnetic anisotropy of a system is increased by about 22 percent or 37 percent respectively. Besides, for a 'Mo/CoFeB/MgO' system, the thermal stability is also greatly enhanced, and after two hours of annealing at 400 DEG C, the vertical magnetic anisotropy of the system is still stable and unchanged, so the application value is promoted, and the multilayer film material can be applied to vertical magnetic tunnels.
Description
Technical field
The present invention relates to a kind of composite material with enhancing " CoFeB/MgO " interface perpendicular magnetic anisotropy performance.
Background technology
Because have high magnetic resistivity, magnetic tunnel-junction receives much concern always.Usually, the magnetic moment of the ferromagnetic electrode of magnetic tunnel-junction is parallel to face, is referred to as magnetic tunnel-junction in the face.But, the magnetic channel (hereinafter to be referred as vertical tunnel junction) that has a perpendicular magnetic anisotropic ferromagnetic electrode was considered to can be used to realize high-density nonvolatile memory-magnetic RAM of future generation (MRAM) in recent years.This mainly is because with respect to magnetic tunnel-junction in the face, vertical tunnel junction: can overcome the edge effect under the small scale, magnetic resistivity is bigger, signal to noise ratio is higher; Anisotropy energy is bigger, and heat resistanceheat resistant disturbance ability is stronger, ultra paramagnetic dimension limit is littler, so the density of device can do more more reliable; Critical reset current has reduced one comparatively speaking with the relevant amount of magnetostatic energy, therefore can be littler.The common multi-layer film material with perpendicular magnetic anisotropic has: transition-rare earth alloy (like TbFeCo, GdFeCo etc.), the L10 phase (Co, Fe)-(Pt, Pd) alloy, and Co/ (Pd, Pt, Ni) multilayer film.But these materials all do not reach the requirement of application, and main cause has: poor heat stability or preparation condition are harsh; Perpendicular magnetic anisotropy can be big inadequately; Crystal structure and barrier layer MgO (001) do not match and make that the magnetoelectricity resistance is too little; And magneto damped coefficient makes that too greatly critical reset current value is big.S.Ikeda people such as [S. Ikeda et al, Nature Mater. 9,721 (2010)] proposes a kind of new multi-layer film material Ta/CoFeB/MgO with magnetic perpendicular magnetic anisotropy.This system utilize CoFeB/MgO interface anisotropy energy at the interface overcome demagnetization can influence, thereby make the magnetic moment of ferromagnetic layer CoFeB perpendicular to face; It is emphasized that the Ta layer is considered to help the perpendicular magnetic anisotropy of CoFeB, perpendicular magnetic anisotropy CoFeB film all be unable to do without Ta neighbour layer [D. C. Worledge et al, Appl. Phys. Lett. 98,022501 (2011)] so far.With respect to the vertical magnetism anisotropic film of above three kinds of routines, the Ta/CoFeB/MgO structure is conveniently used in the MgO magnetic tunnel-junction, and the preparation method is simple; And; This system is through after the simple annealing in process; The crystal structure of ferromagnetic electrode CoFeB and barrier layer MgO matees (be respectively bcc (001) and fcc (100), the mismatch degree is less than 4%) very much, and the tunnel that therefore utilizes this system to prepare has very high magnetic resistivity; Thereby the little critical reset current value of CoFeB magneto damped coefficient is little simultaneously.Yet, the perpendicular magnetic anisotropic of this system that not enough is can or too little, to such an extent as to along with the thickness of CoFeB increases to when having only about 1.5 nm, its magnetic moment has just been got back in the face from vertical direction.Moreover, W. G. Wang people such as [W. G. Wang et al, Appl. Phys. Lett. 99,102502 (2011)] finds that the Ta/CoFeB/MgO system can will descend rapidly through perpendicular magnetic anisotropic after annealing tens of seconds more than 300 ℃.This will be fatal undoubtedly, because for the magnetoelectricity resistance that increases magnetic tunnel-junction reduces the surface resistivity tied simultaneously, tunnel junction need be annealed under the above temperature of 350 degree usually guarantee the good crystallization of barrier layer MgO.
Summary of the invention
To the existing problem of the multi-layer film material that has perpendicular magnetic anisotropic in the prior art; The invention discloses a kind of novel multi-layer film material with perpendicular magnetic anisotropic; This material has increased perpendicular magnetic anisotropic ability and thermal stability through adopting Mo or Hf as the core cushioning layer material.
Be to realize above-mentioned purpose, of the present invention 1, a kind of multi-layer film material with perpendicular magnetic anisotropic is characterized in that said multi-layer film material is from the bottom to top: substrate, core resilient coating, amorphous iron magnetosphere and oxide barrier layer.
Further, the material of described substrate is the material of silicon, glass or other stable chemical performance and surfacing.
Further, the material of said core resilient coating is Mo or Hf; Thickness is 0.5-200 nm.
Further, it is amorphous Co, Fe, B three metaclass alloys that the material of said amorphous iron magnetosphere prepares under the attitude, or other non-crystal class ferromagnetic material.The thickness of this amorphous iron magnetosphere is 0.5-10 nm.
Further, the material of described oxide barrier layer is MgO; The thickness of this oxide barrier layer is 0.5-10 nm.
A kind of multi-layer film material with perpendicular magnetic anisotropic, said multi-layer film material is provided with from the bottom to top: substrate, oxide barrier amorphous iron magnetosphere and core protective layer.
Further, the material of described substrate is the material of silicon, glass or other stable chemical performance and surfacing.
Further, the material of said core protective layer is Mo or Hf; Thickness is 0.5-200 nm.
Further, it is amorphous Co, Fe, B three metaclass alloys that the material of said amorphous iron magnetosphere prepares under the attitude, or other non-crystal class ferromagnetic material.The thickness of this amorphous iron magnetosphere is 0.5-10 nm.
Further, the material of described oxide barrier layer is MgO; The thickness of this oxide barrier layer is 0.5-10 nm.
The multi-layer film material of this " CoFeB/MgO " interface perpendicular magnetic anisotropy among the present invention, this material makes the perpendicular magnetic anisotropic of system can increase about 22% and 37% respectively through the Ta in " Ta/CoFeB/MgO " structure is replaced with Mo or Hf.And for " Mo/CoFeB/MgO " system, thermal stability also strengthens greatly, can still stablize through 400 ℃ of two hours its perpendicular magnetic anisotropies of annealing back constant, thereby using value is able to promote, and this material may be used in the vertical magnetic channel.
Description of drawings
A kind of structural representation that Fig. 1 obtains for utilization method provided by the invention with magnetic perpendicular magnetic anisotropy multi-layer film material;
The another kind of structural representation that Fig. 2 obtains for utilization method provided by the invention with magnetic perpendicular magnetic anisotropy multi-layer film material;
Fig. 3 shows multi-layer film material among the embodiment 1 at the magnetization curve perpendicular to the face direction;
Fig. 4 shows multi-layer film material among the embodiment 1 at the magnetization curve that is parallel to the face direction;
Fig. 5 shows the variation of the Kt of the multi-layer film material among the embodiment 1 with t;
Fig. 6 show embodiment 4 samples perpendicular to face be parallel to the magnetization curve of face direction.
Embodiment
Embodiment 1:
Present embodiment is first kind of multi-layer film material with perpendicular magnetic anisotropic obtaining of utilization method provided by the invention, as shown in Figure 1, its structure supreme order setting of serving as reasons down: the silicon chip 1 of thermal oxidation; Mo core resilient coating 2, its thickness are 5nm; Co
40Fe
40B
20 Amorphous iron magnetosphere 3, its thickness are 0.6 nm-1.8nm; MgO oxide barrier layer 4, its thickness are 2 nm.
The preparation method of the perpendicular magnetic anisotropy multi-layer film material of present embodiment is: adopt the method for magnetron sputtering, base vacuum is superior to 5 * 10
-5Pa, as sputter gas, sputtering pressure is 0.5 Pa with Ar gas, on the Si of surface oxidation sheet, deposits each tunic of perpendicular magnetic anisotropy multi-layer film material successively.Wherein, after deposition is accomplished, with the vacuum annealing two hours under 300 degree of perpendicular magnetic anisotropy multi-layer film material.
Fig. 3 and 4 has provided part typical sample in the present embodiment multi-layer film material respectively perpendicular to face and the magnetization curve that is parallel to the face direction.From figure, can see that multi-layer film material shows tangible perpendicular magnetic anisotropy, and along with Co
40Fe
40B
20The reduction of thickness and increasing.Work as Co
40Fe
40B
20Thickness when being 1.3 nm, perpendicular magnetic anisotropy can be enough to overcome demagnetization can, thereby make the easy axle of magnetic moment perpendicular to face.And adopt " Ta/CoFeB/MgO " multi-layer film material with the quadrat method preparation, soon " the Mo core resilient coating 2 " in the present embodiment change Ta into, as a result Co
40Fe
40B
20Only magnetic moment could be perpendicular to face during less than 1.1nm at thickness.Obviously, the multi-layer film material that provides in the present embodiment has higher perpendicular magnetic anisotropy ability than " Ta/CoFeB/MgO " system that adopts usually at present.The perpendicular magnetic anisotropy of " Mo/CoFeB/MgO " and " Ta/CoFeB/MgO " multi-layer film material can all derive from " CoFeB/MgO " interface anisotropy energy at the interface; And the size of this interface anisotropy energy can be cut square from their the Y axle of Kt-t curve and obtained [M. T. Johnson et al; Rep. Prog. Phys. 59,1409 (1996)].Here K is the perpendicular magnetic anisotropy constant, works as Co
40Fe
40B
20For just (bearing), it equals Co to magnetic moment during perpendicular to (being parallel to) face
40Fe
40B
20Be parallel to (perpendicular to) saturation field of the magnetization curve of face and saturation magnetization product 1/2; T is Co
40Fe
40B
20Thickness.Fig. 5 has provided the Kt-t curve of above two multi-layer film materials.From figure, can obtain: substitute after the Ta that uses always at present with the Mo resilient coating, " CoFeB/MgO " interface anisotropy energy at the interface is by 1.7erg/cm
22.08 erg/cm have been increased to
2, increased by 22%.
Also need to prove: the interface perpendicular magnetic anisotropy of CoFeB/MgO is also closely related with the composition of CoFeB; Thereby when adopting CoFeB research " Ta/CoFeB/MgO " perpendicular magnetic anisotropy of heterogeneity, the thickness limit that the CoFeB film magnetic moment that each seminar obtains can hang down has nothing in common with each other: S.Ikeda adopts Co
20Fe
60B
20The time thickness limit be 1.4 nm [S. Ikeda et al, Nature Mater. 9,721 (2010]; D. people such as C. Worledge adopts Co
60Fe
20B
20The time thickness limit be 1 nm [D. C. Worledge et al, Appl. Phys. Lett. 98,022501 (2011)]; And we adopt Co
40Fe
40B
20The thickness limit that obtains then is 1.1 nm.In any case but the Mo layer should have similar enhancement effect to the perpendicular magnetic anisotropy of the CoFeB film of other composition in principle.
Embodiment 2:
Multi-layer film structure in the present embodiment and embodiment 1 are basic identical, and its structure is from the bottom to top: the silicon chip 1 of thermal oxidation; Mo core resilient coating 2, its thickness are 5nm; Co
40Fe
40B
20 Amorphous iron magnetosphere 3, its thickness are 0.6nm-1.8nm; MgO oxide barrier layer 4, its thickness are 2nm.
The preparation method of the perpendicular magnetic anisotropy multi-layer film material of present embodiment is: adopt the method for magnetron sputtering, base vacuum is superior to 5 * 10
-5Pa, as sputter gas, sputtering pressure is 0.5 Pa with Ar gas, on the Si of surface oxidation sheet, deposits each tunic of perpendicular magnetic anisotropy multi-layer film material successively.After deposition is accomplished, with the vacuum annealing two hours under 400 degree of perpendicular magnetic anisotropy multi-layer film material.
The magnetic property of present embodiment multi-layer film material is compared basic identical with the multi-layer film material of embodiment 1, specifically: Co
40Fe
40B
20Magnetic moment still is 1.3 nm by the thickness that turns to vertical direction in the face, and " CoFeB/MgO " interface anisotropy energy at the interface still is 2.1erg/cm
2About.That is to say that the annealing temperature in " Mo/CoFeB/MgO " vertical multi-layer film material performance good thermal stability, particularly present embodiment is 400 degree, exceeded needed 350 degree of MgO tunnel junction.And for " Ta/CoFeB/MgO " multi-layer film material, " the Mo core resilient coating 2 " that be about in the present embodiment change into after the Ta, after 350 times degree are only annealed half an hour, to such an extent as to the perpendicular magnetic anisotropy of system can be just Co under any thickness of decline rapidly
40Fe
40B
20Magnetic moment all be parallel to face, people's such as this result and W. G. Wang basically identical as a result [W. G. Wang et al, Appl. Phys. Lett. 99,102502 (2011)].
Embodiment 3:
Multi-layer film material in the present embodiment with perpendicular magnetic anisotropic, its structure and embodiment 1 are basic identical, are from the bottom to top: the silicon chip 1 of thermal oxidation; H
fCore resilient coating 2, its thickness are 5nm; Co
40Fe
40B
20 Amorphous iron magnetosphere 3, its thickness are 0.6nm-1.8nm; MgO oxide barrier layer 4, its thickness are 2nm.
The preparation method of the perpendicular magnetic anisotropy multi-layer film material of present embodiment is: adopt the method for magnetron sputtering, base vacuum is superior to 5 * 10
-5Pa uses A
rGas is as sputter gas, and sputtering pressure is 0.5 Pa, on the Si of surface oxidation sheet, deposits each tunic of perpendicular magnetic anisotropy multi-layer film material successively.After deposition is accomplished, with the vacuum annealing two hours under 300 degree of perpendicular magnetic anisotropy multi-layer film material.
Similar with embodiment 1; The result of the perpendicular magnetic anisotropy multi-layer film material " Hf/CoFeB/MgO " in the present embodiment is compared and can know with normally used " Ta/CoFeB/MgO ": substitute after the Ta that uses always at present with the Hf resilient coating, " CoFeB/MgO " interface anisotropy energy at the interface has been increased to 2.34 erg/cm by 1.7erg/cm2
2, increased by 37%, thereby made Co
40Fe
40B
20Magnetic moment can be increased to 1.5nm by original 1.1nm perpendicular to the thickness limit of face.
Embodiment 4:
Second kind of multi-layer film material that present embodiment obtains for utilization method provided by the invention with perpendicular magnetic anisotropic, as shown in Figure 2, its concrete structure is from the bottom to top: the silicon chip 1 of thermal oxidation; MgO oxide barrier layer 4, its thickness are 5 nm; Co
40Fe
40B
20 Amorphous iron magnetosphere 3, its thickness are 1.2 nm; Mo core protective layer 5, its thickness are 5 nm.
The preparation method of the perpendicular magnetic anisotropy multi-layer film material of present embodiment is: adopt the method for magnetron sputtering, base vacuum is superior to 5 * 10
-5Pa, as sputter gas, sputtering pressure is 0.5 Pa with Ar gas, on the Si of surface oxidation sheet, deposits each tunic of perpendicular magnetic anisotropy multi-layer film material successively.After deposition is accomplished, with the vacuum annealing two hours under 300 degree of perpendicular magnetic anisotropy multi-layer film material.
Fig. 6 has provided present embodiment perpendicular magnetic anisotropy film perpendicular to face and the magnetization curve that is parallel to the face direction.From figure, can see: reveal tangible magnetic easy axis characteristic at curve table perpendicular to the face direction--square remanent magnetism rate is 1 basically; The curve that is parallel to the face direction then shows tangible hard axis magnetization characteristic--and linear remanent magnetism rate is zero basically, and the easy magnetizing axis that is to say multi-layer film material is perpendicular to face.
Embodiment 5:
Basic identical among multi-layer film material in the present embodiment and the embodiment 4 with perpendicular magnetic anisotropic, concrete structure is from the bottom to top: the silicon chip 1 of thermal oxidation; MgO oxide barrier layer 4, its thickness are 5 nm; Co
40Fe
40B
20 Amorphous iron magnetosphere 3, its thickness are 1.2 nm; Hf core protective layer 5, its thickness are 5 nm.
The preparation method of the perpendicular magnetic anisotropy multi-layer film material of present embodiment is: adopt the method for magnetron sputtering, base vacuum is superior to 5 * 10
-5Pa, as sputter gas, sputtering pressure is 0.5 Pa with Ar gas, on the Si of surface oxidation sheet, deposits each tunic of perpendicular magnetic anisotropy multi-layer film material successively.After deposition is accomplished, with the vacuum annealing two hours under 300 degree of perpendicular magnetic anisotropy multi-layer film material.
Similar with the result of embodiment 4, the multi-layer film material that present embodiment provides has perpendicular magnetic anisotropic, and its direction of easy axis is perpendicular to face.
Certainly; More than among all embodiment given each layer thickness and the composition of alloy material only be the example that provides as preferred embodiment; According to concrete application, can appropriate change, the thickness of each tunic can be selected according to actual conditions in following scope: the thickness of core resilient coating/protective layer is 0.5-200 nm; The thickness of amorphous iron magnetosphere is 0.5-10 nm, and the thickness of oxide barrier layer is 0.5-10 nm.In addition, what pay special attention to is: as implement 1 last narrate, though the composition of the CoFeB among the above embodiment is Co
40Fe
40B
20, but in principle, Mo or Hf layer should have similar enhancement effect to the perpendicular magnetic anisotropy of the CoFeB film of other composition.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is specified with reference to embodiment; Those of ordinary skill in the art is to be understood that; Technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and the scope of technical scheme of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. the multi-layer film material with perpendicular magnetic anisotropic is characterized in that, said multi-layer film material is from the bottom to top: substrate, core resilient coating, amorphous iron magnetosphere and oxide barrier layer.
2. according to the said multi-layer film material of claim 1, it is characterized in that the material of described substrate is the material of silicon, glass or other stable chemical performance and surfacing.
3. according to the said multi-layer film material of claim 1, it is characterized in that the material of said core resilient coating is Mo or Hf; Thickness is 0.5-200 nm.
4. according to the said multi-layer film material of claim 1, it is characterized in that it is amorphous Co, Fe, B three metaclass alloys that the material of said amorphous iron magnetosphere prepares under the attitude, or other non-crystal class ferromagnetic material; The thickness of this amorphous iron magnetosphere is 0.5-10 nm.
5. according to the said multi-layer film material of claim 1, it is characterized in that the material of described oxide barrier layer is MgO; The thickness of this oxide barrier layer is 0.5-10 nm.
6. the multi-layer film material with perpendicular magnetic anisotropic is characterized in that, said multi-layer film material is provided with from the bottom to top: substrate, oxide barrier amorphous iron magnetosphere and core protective layer.
7. according to the said multi-layer film material of claim 6, it is characterized in that the material of described substrate is the material of silicon, glass or other stable chemical performance and surfacing.
8. according to the said multi-layer film material of claim 6, it is characterized in that the material of said core protective layer is Mo or Hf; Thickness is 0.5-200 nm.
9. according to the said multi-layer film material of claim 6, it is characterized in that it is amorphous Co, Fe, B three metaclass alloys that the material of said amorphous iron magnetosphere prepares under the attitude, or other non-crystal class ferromagnetic material; The thickness of this amorphous iron magnetosphere is 0.5-10 nm.
10. according to the said multi-layer film material of claim 6, it is characterized in that the material of described oxide barrier layer is MgO; The thickness of this oxide barrier layer is 0.5-10 nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103956249A (en) * | 2014-04-03 | 2014-07-30 | 中国科学院物理研究所 | Artificial antiferromagnetic coupling multilayer film material with vertical anisotropy |
| CN104488102A (en) * | 2012-07-27 | 2015-04-01 | 高通股份有限公司 | Amorphous alloy spacer for perpendicular magnetic tunnel junction (MTJ)s |
| CN109164145A (en) * | 2018-08-10 | 2019-01-08 | 武汉钢铁有限公司 | The anisotropic evaluation method of silicon steel material and characterizing method |
| CN109830597A (en) * | 2019-01-11 | 2019-05-31 | 中国科学院物理研究所 | A kind of vertical magnetism tunnel knot multi-layer film structure and preparation method thereof, storage unit |
| CN110927636A (en) * | 2019-11-27 | 2020-03-27 | 北京航空航天大学青岛研究院 | Sensor for measuring vertical magnetic field and method thereof |
| CN115094380A (en) * | 2022-06-02 | 2022-09-23 | 山东麦格智芯机电科技有限公司 | FeCoCr magnetic material and preparation method and application thereof |
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Cited By (7)
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| CN104488102A (en) * | 2012-07-27 | 2015-04-01 | 高通股份有限公司 | Amorphous alloy spacer for perpendicular magnetic tunnel junction (MTJ)s |
| CN104488102B (en) * | 2012-07-27 | 2017-05-03 | 高通股份有限公司 | Amorphous alloy spacer for perpendicular magnetic tunnel junction (MTJ)s |
| CN103956249A (en) * | 2014-04-03 | 2014-07-30 | 中国科学院物理研究所 | Artificial antiferromagnetic coupling multilayer film material with vertical anisotropy |
| CN109164145A (en) * | 2018-08-10 | 2019-01-08 | 武汉钢铁有限公司 | The anisotropic evaluation method of silicon steel material and characterizing method |
| CN109830597A (en) * | 2019-01-11 | 2019-05-31 | 中国科学院物理研究所 | A kind of vertical magnetism tunnel knot multi-layer film structure and preparation method thereof, storage unit |
| CN110927636A (en) * | 2019-11-27 | 2020-03-27 | 北京航空航天大学青岛研究院 | Sensor for measuring vertical magnetic field and method thereof |
| CN115094380A (en) * | 2022-06-02 | 2022-09-23 | 山东麦格智芯机电科技有限公司 | FeCoCr magnetic material and preparation method and application thereof |
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