CN102360119B - Light modulator pixel unit and manufacturing method thereof - Google Patents
Light modulator pixel unit and manufacturing method thereof Download PDFInfo
- Publication number
- CN102360119B CN102360119B CN201110298381.2A CN201110298381A CN102360119B CN 102360119 B CN102360119 B CN 102360119B CN 201110298381 A CN201110298381 A CN 201110298381A CN 102360119 B CN102360119 B CN 102360119B
- Authority
- CN
- China
- Prior art keywords
- movable electrode
- light
- dielectric layer
- layer
- top electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
An embodiment of the invention provides a light modulator pixel unit and a manufacturing method thereof. The light modulator pixel unit comprises that: an interlayer dielectric layer positioned on a substrate; a cavity in the interlayer dielectric layer; a bottom electrode, a movable electrode and a top electrode which are in the interlayer dielectric layer and have positions corresponding to the position of the cavity; an optical filter which is on the top electrode and is used for converting white light into three-primary-color light. The movable electrode has a light reflecting surface, and the top electrode is a semi-transparent metal film. By utilizing movement of the movable electrode in the cavity, a light modulator can carry out modulation on the three-primary-color light after conversion by the optical filter. The embodiment of the invention solves a problem that a present light modulator pixel unit generally needs to utilize monochromatic light emitted by a monochromatic light source as incident light, and cost of the light modulator pixel unit is reduced.
Description
Technical field
The present invention relates to photomodulator, particularly light modulator pixel unit being applied to flat panel display systems and preparation method thereof.
Background technology
In projection systems, crucial building block is photomodulator.Existing photomodulator comprises micro-electromechanical component (Micro-Electro-Mechanical Systems, MEMS), described photomodulator is by controlling the electric signal put on micro-electromechanical component, control micro-electromechanical component to move, utilize the light of the movement of micro-electromechanical component to the incident beam modulated device to modulate, export the light with certain gray scale.
Normal light modulator comprises the pixel cell of multiple arrangement in matrix, existing light modulator pixel unit has two kinds: digital mirror device (the digital mirror device utilizing the principle of reflection of light, and utilize the grating light valve (grating light valve, GLV) of diffraction principle of light DMD).Wherein the energy consumption of the single pixel of digital mirror device is large, and particularly when being applied to high-resolution micro display system, overall energy consumption is large; And the energy consumption of the single pixel of grating light valve is little, overall energy consumption is less, and has the advantages such as analog gray scale is good, optical efficiency is high, modulating speed is fast due to grating light valve, becomes current mainstream technology.At international application no be can find in the international application of PCT/US2002/0096022002.3.27 more about existing light modulator pixel unit information.
In practice, find that monochromatic light that existing light modulator pixel unit generally needs to utilize monochromatic source to send is as incident ray, described monochromatic source can be generally price LED costly, and therefore, the cost of existing light modulator pixel unit is higher.
Summary of the invention
The problem that embodiments of the invention solve is to provide a kind of light modulator pixel unit, mems optical modulator and preparation method thereof, solve monochromatic light that existing light modulator pixel unit generally needs to utilize monochromatic source to send as the problem of incident ray, reduce the cost of light modulator pixel unit.
In order to solve the problem, the invention provides a kind of light modulator pixel unit, comprising:
Substrate;
Described substrate has the interlayer dielectric layer containing cavity;
Bottom electrode, is positioned at the position of corresponding described cavity on described substrate;
Top electrodes, be positioned at the interlayer dielectric layer corresponding to bottom electrode position above described cavity, described top electrodes is semi-transparent metallic film;
Optical filter, is positioned on described top electrodes, for being three primary colours light by white light conversion;
Movable electrode, in cavity between described bottom electrode and top electrodes, described movable electrode is light reflection face towards the surface of top electrodes, described movable electrode can move along the direction perpendicular to light reflection face, and lay respectively at primary importance, the second place or the 3rd position, make a kind of in three primary colours light through top electrodes and light after movable electrode reflection interferes at top electrodes.
Alternatively, electrical insulation between described bottom electrode and described substrate; Electrical insulation between described top electrodes and described substrate.
Alternatively, described interlayer dielectric layer covers described substrate surface;
Described bottom electrode is positioned at the interlayer dielectric layer covering substrate surface;
Described movable electrode is positioned at described cavity, has gap between the cavity wall of described movable electrode and described cavity, for holding the motion of movable electrode.
Alternatively, described interlayer dielectric layer is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Alternatively, also comprise the control circuit being positioned at substrate, described bottom electrode is electrically connected with the first control end of described control circuit, described movable electrode is electrically connected with the second control end of described control circuit, described top electrodes is electrically connected with the 3rd control end of described control circuit, multiple second conductive plunger is formed in described interlayer dielectric layer, described multiple second conductive plunger is by the second control end and movable electrode electrical connection, and described multiple second conductive plunger is about the Central Symmetry of movable electrode.
Alternatively, described top electrodes material is metal, and thickness range is 30 ~ 300 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Alternatively, the material of described movable electrode is metal, and thickness range is 800 ~ 10000 dusts, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Alternatively, described movable electrode is formed with top layer, described top layer is for increasing the rigidity of movable electrode.
Correspondingly, the embodiment of the present invention also provides a kind of method for making of light modulator pixel unit, comprising:
Substrate is provided;
Form first medium layer over the substrate;
Bottom electrode is formed on described first medium layer surface;
Described first medium layer and bottom electrode form second dielectric layer;
The first sacrifice layer is formed in described second dielectric layer;
Described first sacrifice layer forms movable electrode;
Described movable electrode and second dielectric layer form the 3rd dielectric layer;
Form the second sacrifice layer in the 3rd dielectric layer on movable electrode, the position of described second sacrifice layer is corresponding with the position of the first sacrifice layer;
Top electrodes is formed in described 4th dielectric layer;
Remove the first sacrifice layer and the second sacrifice layer, form cavity, described movable electrode is suspended in described cavity;
Described top electrodes forms optical filter.
Alternatively, described top electrodes is semi-transparent metallic film.
Alternatively, before the described top electrodes of formation, also comprise:
In described 4th dielectric layer, form the step of through hole, described through hole is positioned at described gate hole, and described through hole exposes the surface of described second sacrifice layer;
Described through hole is utilized to remove described first sacrifice layer and the second sacrifice layer.
Alternatively, after utilizing described through hole to remove described first sacrifice layer and the second sacrifice layer, also comprise: form overlayer at described 4th dielectric layer surface, described overlayer covers described young sky and is closed by described through hole, described overlayer and described first medium layer, second dielectric layer, the 3rd dielectric layer and the 4th dielectric layer form interlayer dielectric layer, and described optical filter is formed on described overlayer.
Alternatively, also comprise:
In described interlayer dielectric layer, form multiple second conductive plunger, described multiple second conductive plunger is by the second control end and movable electrode electrical connection, and described multiple second conductive plunger is about the Central Symmetry of movable electrode.
Alternatively, described top electrodes material is metal, and thickness range is 30 ~ 300 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Alternatively, also comprise: the step forming top layer on described movable electrode.
Compared with prior art, the present invention has the following advantages:
Light modulator pixel unit described in embodiments of the invention is owing to having installed optical filter additional, therefore, described light modulator pixel unit can white light source (being such as comprise the lamp of the sun or common daylight lamp) as incident ray, and without the need to special monochromatic source as incident ray, because the cost sum of optical filter and white light source is usually well below the cost of monochromatic source, therefore, light modulator pixel unit of the present invention is compared with the light modulator pixel unit of existing employing monochromatic source, and cost reduces greatly;
The embodiment of the present invention also arranges top layer on described movable electrode, thus enhances the rigidity of top electrodes, prevents described top electrodes from producing metal fatigue due to Reusability, improves the serviceable life of movable electrode;
Embodiments of the invention provide mems optical modulator, described mems optical modulator comprises the first light modulator pixel unit for modulating the first light, for modulating the second light modulator pixel unit of the second light and the 3rd light modulator pixel unit for modulating the 3rd light, described first light modulator pixel unit, second light modulator pixel unit and the 3rd light modulator pixel unit comprise optical filter, white light is filtered into three primary colours light by described optical filter, make described first light modulator pixel unit, second light modulator pixel unit and the 3rd light modulator pixel unit can modulate the first light respectively, second light or the 3rd light, the mems optical modulator of the embodiment of the present invention can be modulated the white light that white light source sends, without the need to special three primary light source, thus solve the problem that existing mems optical modulator normally cannot show under white light source, mems optical modulator of the present invention is particularly suitable for flat panel display systems.
Accompanying drawing explanation
Fig. 1 is the structural representation of the light modulator pixel unit of one embodiment of the invention.
Fig. 2 is the cross-sectional view of Fig. 1 along AA.
Fig. 3 is the light modulator pixel unit method for making schematic flow sheet of an alternative embodiment of the invention.
Fig. 4 ~ Figure 11 is the method for making cross-sectional view of the light modulator pixel unit of one embodiment of the invention.
Figure 12 is the cross-sectional view of Fig. 7 along AA.
Embodiment
Inventor finds, the monochromatic light that the photomodulator due to prior art normally sends for monochromatic source is modulated, and this makes existing photomodulator cannot be applied to the situation of white light source.Such as existing photomodulator, when being applied to micro display system (such as mobile phone or e-book), there will be the bad problem that maybe cannot show of display of display screen under sunlight by day.In order to solve the problem, inventor proposes a kind of light modulating pixels unit, and utilize the principle of interference of light to modulate white light, described light modulator pixel unit is mainly used in flat panel display systems, micro display system.
Below the device architecture of light modulator pixel unit of the present invention is described.
Please refer to Fig. 2, Fig. 2 is the structural representation of the light modulator pixel unit of one embodiment of the invention.Light modulator pixel unit 200 comprises:
Substrate 201, described substrate 201 is formed with interlayer dielectric layer 227, is formed with cavity 219 in described interlayer dielectric layer 227, is positioned at described interlayer dielectric layer 227, and described cavity 219 has cavity wall; Bottom electrode 205, is positioned on described substrate 201, and the position of described bottom electrode 205 is corresponding with the position of described cavity 219, and described bottom electrode 205 is electrically connected with the first control end 202 of control circuit;
Top electrodes 221, be positioned at the interlayer dielectric layer 227 on described substrate 201 and cavity 219, the position of described top electrodes 221 is corresponding with the position of described bottom electrode 205, described top electrodes 221 is electrically connected with the 3rd control end 203 of control circuit, and described top electrodes 221 is semi-transparent metallic film;
Optical filter 235, be positioned on described top electrodes 221, described optical filter 235 is for being filtered into the first light, the second light or the 3rd light by the white light of the described light modulator pixel unit of input, and described first light, the second light, the 3rd light are three primary colours light;
Movable electrode 212, in cavity between described bottom electrode 205 and top electrodes 221, described movable electrode 212 is electrically connected with the second control end 204 of control circuit, described movable electrode 212 is light reflection face towards the surface of top electrodes 221, described movable electrode 212 can move along the direction perpendicular to light reflection face, has electrically insulating material between described movable electrode 212 and top electrodes 221 and between described movable electrode 212 and bottom electrode 205;
Described top electrodes 221, movable electrode 212, bottom electrode 205 position are corresponding under control circuit controls, the position of described movable electrode 212 can offset, lay respectively at primary importance, the second place or the 3rd position, when movable electrode 212 is positioned at primary importance, be incident to the first light of light modulator pixel unit 200 via top electrodes 221 reflect light with through top electrodes 221 by movable electrode 212 reflect and again through the light generation destructive interference of top electrodes 221; When movable electrode 212 is positioned at the second place, be incident to the second light of light modulator pixel unit 200 via top electrodes 221 reflect light with through top electrodes 221 by movable electrode 212 reflect and again through the light generation destructive interference of top electrodes 221; When movable electrode 212 is positioned at the 3rd position, be incident to the 3rd light of light modulator pixel unit 200 via top electrodes 221 reflect light with through top electrodes 221 by movable electrode 212 reflect and again through the generation destructive interference of the light of top electrodes 221; Described first light, the second light, the 3rd light are three primary colours light.
Particularly, as an embodiment, described substrate 201 is Semiconductor substrate, such as, be silicon, germanium or gallium arsenide etc.As other embodiment, described substrate 201 can also be glass substrate.To be described for Semiconductor substrate for described substrate 201 below.
Described control circuit is used for applying control signal to each structure (such as movable electrode 212, top electrodes 221 and bottom electrode 205) in substrate 201, and described control circuit has the first control end 202, second control end 204, the 3rd control end 203.Described control circuit can be formed at (when substrate 201 is for Semiconductor substrate) in described substrate 201, also can be formed in second half conductive substrate, is electrically connected by conductive structure with each structure on substrate 201.
Still with reference to figure 2, as an embodiment, described interlayer dielectric layer 227 covers the surface of described substrate 201, and described cavity 219 is divided into Part I 208 and Part II 217, described Part I 208 is positioned at the bottom of cavity 219, and described Part II 217 is positioned at the top of cavity 219.
In the interlayer dielectric layer 227 of described bottom electrode 205 on described substrate 201 also and between substrate 201.
Described top electrodes 221 is in the interlayer dielectric layer 227 between the Part II 217 and substrate 201 of cavity 219.
Described movable electrode 212 is positioned at described cavity 219, the size and dimension of cavity 219 is corresponding with the size and dimension of movable electrode 212, between described movable electrode 212 and the cavity wall of described cavity 219, there is gap, for holding the motion of movable electrode 212, described movable electrode 212 area is less than the area of top electrodes 221.
Described movable electrode 212, between described bottom electrode 205 and top electrodes 221, described movable electrode 212 is electrically connected with the second control end 204, described movable electrode 212 is light reflection face towards the surface of top electrodes 221, described movable electrode 212 can move along the direction perpendicular to light reflection face, has electrically insulating material between described movable electrode 212 and top electrodes 221 and between described movable electrode 212 and bottom electrode 221.Wherein, light reflection face of the present invention, after specifically referring to that parallel rays is incident to light reflection face, the reflection ray formed after reflection is still parallel rays (i.e. light emitting surface to incident ray be reflected into mirror-reflection).
Further, in the present embodiment, between described movable electrode 212 and top electrodes 221, there is top layer 224, described top layer 224 comprises the first insulation course 223 between the second insulation course 214 on movable electrode 212 and top electrodes 221, and described first insulation course 223 directly adopts part interlayer dielectric layer 227.In addition, below top electrodes 221, additionally insulating material can also be formed to carry out electrical insulation between movable electrode 212 and top electrodes 221.
Between described movable electrode 212 and bottom electrode 205, there is bottom insulation layer 211.In the present embodiment, described bottom insulation layer 211 directly adopts the interlayer dielectric layer 227 of part.In addition, between movable electrode 212 and bottom electrode 205, additionally insulating material can also be formed to carry out electrical insulation between movable electrode 212 and bottom electrode 205.
Described top electrodes 221, movable electrode 212, bottom electrode 205 position are corresponding, and described movable electrode 212 area is less than the area of top electrodes 221, and under control circuit controls, the position of described movable electrode 212 can offset.
Multiple second conductive plunger 215 is formed in described interlayer dielectric layer 227.Second control end 204 and movable electrode 212 are electrically connected by described second conductive plunger 215, and described multiple second conductive plunger 215 is about the Central Symmetry of movable electrode 212.In the present embodiment, described multiple second conductive plunger 215 is 2, owing to cutting relation of plane, illustrate only second conductive plunger 215 in Fig. 1, will introduce the relation of the second conductive plunger 215 and movable electrode 212 and cavity 219 in subsequent figure 2 further.
The first conductive plunger 206, the 3rd conductive plunger 222 is also formed in described interlayer dielectric layer 227.Wherein said first conductive plunger 206 is for being electrically connected the first control end 202 and bottom electrode 205, and described 3rd conductive plunger 222 is for being electrically connected the 3rd control end 203 and top electrodes 221.
Further, described top electrodes 221 is for light splitting, and namely for being divided into two by light incident above top electrodes 221, therefore described top electrodes 221 is semi-transparent metallic film.Inventor finds, metallic film, when thickness is 30 ~ 300 dust, has semi-transparent character, can by semi-permeable for incident ray one, a half reflection.Inventor also finds, the semi-transparent character of metallic film depends primarily on the thickness of metal level, little with the wavelength relationship of incident ray.The present invention has semi-transparent character when utilizing thickness of metal film to be 30 ~ 300 dust, it can be used as semi-transparent film, carries out light splitting.Wherein, described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
Because top electrodes 221 is positioned at interlayer dielectric layer 227, light is when optical filter 235 the incident beam modulated device pixel cell 200, the first light, the second light or the 3rd light is filtered into by described optical filter 235, described first light, the second light or the 3rd light arrive described top electrodes 221, because described top electrodes 221 is light reflection face away from the surface of bottom electrode 205, therefore, the first incident above top electrodes 221 light, the second light or the 3rd light are divided into Part I and Part II by top electrodes 221.Namely Part I is by top electrodes 221 reflective surface, and Part II is through the incident movable electrode 212 of described top electrodes 221.
As an embodiment, the material of described movable electrode 212 is metal, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.The thickness range of described movable electrode 212 is 800 ~ 10000 dusts.
Further, shown in figure 2, described first insulation course 223 is a part for interlayer dielectric layer 227, does not need extra processing step to form the first insulation course 223 like this.Described second insulation course 214 is formed at above the light reflection face of described movable electrode 212.Described second insulation course 214 is the extra electric insulation layer formed, and the material of described electric insulation layer is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
As one embodiment of the present of invention, described second insulation course 214 along with movable electrode 212 in cavity 219 along perpendicular to the direction offset movement in light reflection face offset movement.Material due to movable electrode 223 is metal, in manufacturing process the restriction of process conditions to cause in uneven thickness or use procedure movable electrode 212 repeatedly athletic meeting cause metal fatigue (metal failure, or follow the string), the present invention arranges the second insulation course 214 above movable electrode 212, can increase the rigidity of movable electrode 212.
Therefore, movable electrode 212 of the present invention is when the motion of cavity 219 bias internal, the second insulation course 214 above movable electrode 212 also can be followed movable electrode 212 and be carried out offset movement together, in addition, because the second insulation course 214 is complete printing opacities, therefore light can arrive movable electrode 212 through the second insulation course 214, and reflects on the surface of movable electrode 212.
In other examples, optimize manufacture craft if pass through, material selection is suitable, movable electrode 212 also can be made to have good rigidity, and the light reflection face noting be used in movable electrode 212 like this arranges the second insulation course 214.Now, top layer is only made up of the first insulation course 223, namely the first insulation course 223 is only had to carry out electrical insulation between movable electrode 212 and top electrodes 221, in the present embodiment, described first insulation course 223 directly utilizes a part for described interlayer dielectric layer, also additionally insulating material be can form 221 times at top electrodes, monox, silicon oxynitride, silit, silicon nitride or combination wherein such as adopted.
The thickness of top layer 224 of the present invention is relevant with the wavelength of the incident ray of modulation, and therefore, the thickness of top layer 224 should be determined according to incident ray wavelength to be modulated.In the present embodiment, the thickness of top layer 224 should meet movable electrode 212 when moving to primary importance, and the light reflection face of described movable electrode 212 and the distance of top electrodes 221 are the odd-multiple of 1/4 of the first wavelength of light.During owing to being positioned at primary importance, very close to each other between movable electrode 212 and top electrodes 221, only have top layer 224, therefore the thickness of described top layer 224 and the thickness sum of top electrodes 221 should equal the odd-multiple of 1/4 of the first wavelength of light.After described top layer 224 is determined, the thickness of the first insulation course 223 and the second insulation course 214 can be arranged according to actual conditions.
Bottom insulation layer 211 between described movable electrode 212 and bottom electrode 205 is for movable electrode 212 and bottom electrode 205 electrical insulation.As one embodiment of the present of invention, described bottom insulation layer 211 can be a part for described interlayer dielectric layer 227, like this without the need to additionally making electrical insulator layer; As another embodiment of the present invention, described bottom insulation layer 211 is the extra electrical insulator layer made, and its material is selected from monox, silicon oxynitride, silit, silicon nitride or combination wherein.
In order to light modulator pixel unit structure of the present invention is better described, please refer to Fig. 2, for Fig. 1 is along the cross-sectional view of AA.Between described movable electrode 212 and the cavity wall of described cavity 219, there is gap, so that the offset movement of movable electrode 212, described movable electrode 212 is electrically connected with the second control end 204 of control circuit by multiple second conductive plunger 215, and described multiple second conductive plunger 215 is about the Central Symmetry of movable electrode 212.Described second conductive plunger 215 1 aspect is used for movable electrode 212 and is electrically connected with the second control end 204, and on the other hand, described second conductive plunger 215, for being suspended in cavity 219 by movable electrode 212, supporting movable electrode 212 and moves.The number of described second conductive plunger 215 can be more than 2 or 2, in the present embodiment be 2, because movable electrode 212 receives electrostatic force from control circuit by the second conductive plunger 215, when ensureing the electrostatic force balance that movable electrode 212 is subject to, the arrangement of the second conductive plunger 212 can be arranged according to actual.
Below in conjunction with Fig. 2, described control circuit is electrically connected with described bottom electrode 205, movable electrode 212, top electrodes 221 respectively by the first control end 202, second control end 204, the 3rd control end 203.Owing to arranging top layer 224 between top electrodes 221, movable electrode 212, thus top electrodes 221, top layer 224 form the first capacitance structure with movable electrode 212.If control circuit is to the second control end 204, electric signal (being equivalent to the first capacitance structure charging) is applied between 3rd control end 203, at top electrodes 221, the first electrostatic force can be produced between movable electrode 212, described first electrostatic force makes movable electrode 212 (comprising the second insulation course 214 above movable electrode 212), and to top electrodes 221 offset movement, (the second conductive plunger 215 is electrically connected with movable electrode 212, thus there is elastic deformation in the second conductive plunger 215), the first insulation course 223 that described movable electrode 212 can move to top layer 224 contacts with the second insulation course 214, now described movable electrode 212 is positioned at primary importance, between the light reflection face of described movable electrode 212 and top electrodes 221, there is the first preset distance, described first preset distance should equal the odd-multiple of 1/4 of the first wavelength of light.Now, if the first light is to light modulator pixel unit 200, then the first light is divided into Part I and Part II through top electrodes 221, wherein Part I is reflected by top electrodes 221, Part II then transfers to the light reflection face of movable electrode 212 through top electrodes 221, then top electrodes 221 is reflexed to by light reflection face, and upwards transmit through top electrodes 221, thus the Part II of the first light is the odd-multiple of 1/2 of the first wavelength of light relative to the wavelength difference of Part I.Because the Part II of the first light is identical with Part I frequency, and Part II is the odd-multiple of 1/2 of the first wavelength of light relative to the wavelength difference of Part I, therefore, can there is destructive interference in the Part II of the first light and Part I, it is zero (entirely black) that light modulator pixel unit 200 exports.
If control circuit does not apply electric signal between the second control end 204, the 3rd control end 203 or removes electric signal, the first electrostatic force then produced between top electrodes 221, movable electrode 212 disappears, second conductive plunger 215 returns to the state before elastic deformation, thus movable electrode 212 is under the draw of the second conductive plunger 215, carry out offset movement to relaxation state.Now described movable electrode 212 is positioned at the second place, between the light reflection face of movable electrode 212 and top electrodes 221, there is the second preset distance, described second preset distance should equal the odd-multiple of 1/4 of the second wavelength of light, now, if the second light is to light modulator pixel unit 200, then the second light is divided into Part I and Part II through top electrodes 221, wherein Part I is reflected by top electrodes 221, Part II then transfers to the light reflection face of movable electrode 212 through top electrodes 221, then top electrodes 221 is reflexed to by light reflection face, and upwards transmit through top electrodes 221, thus the Part II of the second light is the odd-multiple of 1/2 of the second wavelength of light relative to the wavelength difference of Part I.Because the Part II of the second light is identical with Part I frequency, and Part II is the odd-multiple of 1/2 of the second wavelength of light relative to the wavelength difference of Part I, therefore, the Part II of the second light and Part I generation destructive interference, it is zero (entirely black) that light modulator pixel unit 200 exports.
Be provided with bottom insulation layer 211 between movable electrode 212, bottom electrode 205, described movable electrode 212, bottom insulation layer 211, bottom electrode 205 form the second capacitance structure.If control circuit is to the first control end 202, electric signal (being equivalent to the second capacitance structure charging) is applied between second control end 204, then at movable electrode 212, the second electrostatic force is produced between bottom electrode 205, described second electrostatic force makes movable electrode 212, and towards bottom electrode 205 offset movement, (the second conductive plunger 215 is electrically connected with movable electrode 212, thus there is elastic deformation in the second conductive plunger 215), described movable electrode 212 can move to movable electrode 212 and contact with bottom cavity 219, now described movable electrode 212 is positioned at the 3rd position, there is between the light reflection face of movable electrode 212 and top electrodes 221 the 3rd preset distance, described 3rd preset distance should equal the odd-multiple of 1/4 of the 3rd wavelength of light, now, if the 3rd light is to light modulator pixel unit 200, then the 3rd light is divided into Part I and Part II through top electrodes 221, wherein Part I is reflected by top electrodes 221, Part II then transfers to the light reflection face of movable electrode 212 through top electrodes 221, then top electrodes 221 is reflexed to by light reflection face, and upwards transmit through top electrodes 221, thus the Part II of the 3rd light is the odd-multiple of 1/2 of the wavelength of the 3rd light relative to the wavelength difference of Part I.Because the Part II of the 3rd light is identical with Part I frequency, and the wavelength difference of Part II and Part I is the odd-multiple of 1/2 of the wavelength of the 3rd light, therefore, 3rd light Part II and Part I generation destructive interference, it is zero (entirely black) that light modulator pixel unit 200 exports.
From above-mentioned analysis, when the light reflection face of movable electrode 212 and the distance of top electrodes 221 equal 1/4 odd-multiple of the first wavelength of light, light modulator pixel unit 200 inputs the first light, export as entirely black, if light modulator pixel unit 200 inputs the second light or the 3rd light, then light modulator pixel unit 200 is now minute surface relative to the second light and the 3rd light, and namely light modulator pixel unit 200 inputs the second light, reflects the second light and is exported; Or input the 3rd light, same reflection the 3rd light is also exported.
In like manner, for when the light reflection face of movable electrode 212 and the distance of top electrodes 221 equal 1/4 odd-multiple of the second wavelength of light, light modulator pixel unit 200 inputs the second light, exports as entirely black; Light modulator pixel unit 200 inputs the 3rd light or the first light, then now light modulator pixel unit 200 is minute surface relative to the 3rd light or the first light, and namely light modulator pixel unit 200 inputs the first light, reflects the first light and is exported; Light modulator pixel unit 200 inputs the 3rd light, and reflection the 3rd light is also exported.
For when the light reflection face of movable electrode 212 and the distance of top electrodes 221 equal 1/4 odd-multiple of the 3rd wavelength, light modulator pixel unit 200 inputs the 3rd light, exports as entirely black; Now light modulator pixel unit 200 is minute surface relative to the first light or the second light, and namely light modulator pixel unit 200 inputs the first light, reflects the first light and is exported; Or input the second light, reflect the second light and exported.
Due to white light can be utilized as light source, thus mems optical modulator of the present invention can directly utilize daylight lamp or sunshine as light source, optical filter is utilized to filter the white light that daylight lamp or sunshine send, thus without the need to special monochromatic source, because the cost of optical filter is far below the cost of monochromatic source, therefore the cost of the mems optical modulator of the present embodiment reduces than existing photomodulator.
The mems optical modulator of the embodiment of the present invention can be modulated the white light that white light source sends, without the need to special three primary light source, thus solving the problem that existing mems optical modulator normally cannot show under white light source, mems optical modulator of the present invention is particularly suitable for flat panel display systems.
Present invention also offers a kind of method for making of light modulator pixel unit, please refer to Fig. 5, is the light modulator pixel unit method for making schematic flow sheet of another embodiment of the present invention.Described method comprises:
Step S1, provides substrate;
Step S2, forms first medium layer over the substrate;
Step S3, forms bottom electrode on described first medium layer surface;
Step S4, described first medium layer and bottom electrode form second dielectric layer;
Step S5, forms the first sacrifice layer in described second dielectric layer;
Step S6, described first sacrifice layer forms movable electrode;
Step S7, described movable electrode and second dielectric layer form the 3rd dielectric layer;
Step S8, form the second sacrifice layer in the 3rd dielectric layer on movable electrode, the position of described second sacrifice layer is corresponding with the position of the first sacrifice layer;
Step S9, forms top electrodes in described 4th dielectric layer;
Step S10, removes the first sacrifice layer and the second sacrifice layer, and form cavity, described movable electrode is suspended in described cavity.
Below in conjunction with embodiment, technical scheme of the present invention is described in detail.Please refer to the method for making cross-sectional view of the light modulator pixel unit of the one embodiment of the invention shown in Fig. 4 ~ Figure 11.
First, please refer to as Fig. 4, provide substrate 201, described substrate 201 is Semiconductor substrate.As an embodiment, be formed with control circuit in described substrate 201, described control circuit has the first control end 202, second control end 204, the 3rd control end 203.Described first control end 202, second control end 204, the 3rd control end 203 apply electric signal for the bottom electrode to follow-up formation, movable electrode, top electrodes, its layout structure and bottom electrode, movable electrode, top electrodes corresponding.Can specifically arrange according to actual needs.As other embodiments of the present invention, described control circuit can also be formed in another Semiconductor substrate, is electrically connected by the bottom electrode of conductive structure and follow-up formation in substrate 201, movable electrode and top electrodes.
Then, with reference to figure 5, form first medium layer 207 on the substrate 201, and form bottom electrode 205 on described first medium layer 207 surface, be formed with the first conductive plunger 206 in first medium layer 207 below described bottom electrode 205, described first conductive plunger 206 is electrically connected bottom electrode 205 and the first control end 202.
Then, please refer to Fig. 6, first medium layer 207 is formed second dielectric layer 228, described second dielectric layer 228 comprises bottom insulation layer 211.The material of described second dielectric layer 228 is selected from monox, silicon oxynitride, silit, silicon nitride or combination wherein.Described bottom insulation layer 211 is positioned at the second dielectric layer 228 above bottom electrode 205.Described bottom insulation layer 211 is for insulating between bottom electrode 205 and the movable electrode of follow-up formation, and its material can be monox, silicon oxynitride, silit, silicon nitride or combination wherein.As preferred embodiment, the material of described bottom insulation layer 211 selects the material identical with second dielectric layer 228, while formation second dielectric layer 228, can form described bottom insulation layer 211, save processing step like this.Described bottom insulation layer 211 also can utilize extra processing step to be formed, and its material can be monox, silicon oxynitride, silit, silicon nitride or combination wherein.
Then, still with reference to figure 6, described second dielectric layer 228 is etched, in described second dielectric layer 228, form the first groove 208, expose described bottom insulation layer 211.The position of described first groove 208 is corresponding with the position of bottom electrode 205, and for the Part I of follow-up formation cavity, the movable electrode providing space to support follow-up formation carries out offset movement.
Then, continue with reference to figure 6, in described first groove 208, fill the first sacrifice layer 209, described first sacrifice layer 209 covers described bottom insulation layer 211.
Described first sacrifice layer 209 is for when follow-up formation movable electrode, support described movable electrode, finally will be removed, therefore the material of the first sacrifice layer 209 is selected from and is easy to removed material, namely described first sacrifice layer 209 preferably has the material of higher etching selection ratio with the material of the movable electrode of second dielectric layer 228 and follow-up formation, can not destroy the material that other do not wish removal like this when removal the first sacrifice layer 209.The such as material of described first sacrifice layer 209 can be carbon, germanium or polyamide (polyamide).In the present embodiment, the material of described first sacrifice layer 209 is amorphous carbon (Amorphous Carbon), utilizes plasma enhanced chemical vapor deposition (PECVD) technique to be formed.In order to ensure the quality of the amorphous carbon film formed, the Process temperature ranges of described plasma reinforced chemical vapour deposition is preferably 350 ~ 450 DEG C.
The present invention is filled in amorphous carbon in the first groove 208 by utilizing the method for plasma activated chemical vapour deposition, like this can be compatible with CMOS technology, and the amorphous carbon structure utilizing plasma activated chemical vapour deposition method to be formed is fine and close, carbon dioxide can be oxidized to by cineration technics, be easy to gasification finish, and can not impact the remainder of device.It should be noted that, utilizing after plasma enhanced chemical vapor deposition method fills the first sacrifice layer 209 in the first groove 208, need the step of carrying out surface planarisation, deposition step during to ensure follow-up making movable electrode can plated metal equably.
Please refer to Fig. 7, movable electrode 212 is formed on the surface of described second dielectric layer 228 and the first sacrifice layer 209, described movable electrode 212 and bottom electrode 205 electrical insulation, the position of described movable electrode 212 is corresponding with bottom electrode 205, and described movable electrode 212 is positioned at and is electrically connected with the second light control end 204 by the second conductive plunger 215.Before formation movable electrode 212, need position formation at least two the second conductive plungers 215 corresponding to the second control end 204, movable electrode 212.Described second conductive plunger 215 is about the Central Symmetry of movable electrode 212.Described second conductive plunger 215 runs through described second dielectric layer 228, first medium layer 207.Described movable electrode 212 has light reflection face, for reflection ray away from the side of bottom electrode 205.
Please refer to Figure 12, for Fig. 7 is along the cross-sectional view of AA.First groove 208 is formed in second dielectric layer 228, fills the first sacrifice layer 209 in described first groove 208.Movable electrode 212 is electrically connected with the second control end 204 by the second conductive plunger 215.Described second conductive plunger 215 distributes about the Central Symmetry of movable electrode 212.Because the second conductive plunger 215 1 aspect is used for movable electrode 212 to be electrically connected, on the other hand, for the movable electrode 212 of follow-up formation is suspended in the cavity of follow-up formation, and supports movable electrode 212 and move.Due to movable electrode 212 offset movement under the electrostatic forcing of control circuit, arranging described second conductive plunger 215 should distribute about the Central Symmetry of movable electrode 212, ensures the electrostatic force balance that movable electrode 212 is subject to like this.Ensureing that under the prerequisite that the electrostatic force that movable electrode 212 is subject to balances, the number of the second conductive plunger 215 can also be 3 or multiple, and its arrangement can be selected as the case may be, is not described in detail at this.
In the present embodiment, described first groove 208 and some movable electrode 212 shape being positioned at the first groove 208 are square.In other examples, described first groove 208 and some movable electrode 212 shape being positioned at the first groove 208 can also be other shape, such as circular etc.
The material of described movable electrode 212 is selected from metal, and described metal can be, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.The thickness range of described movable electrode 212 is 800 ~ 10000 dusts.
Please refer to Fig. 7 below, material due to movable electrode 212 is metal, in order to prevent manufacture craft limit the metal surface caused uneven or repeatedly moving bottom electrode cause metal fatigue failure, as preferred embodiment, after formation movable electrode 212, need to form the second insulation course 214 covering movable electrode 212.The material of described second insulation course 214 selects to have certain rigid transparent megohmite insulant, in order to avoid affect the light reflection face reflecting effect of movable electrode 212, also increases the rigidity of movable electrode 212 simultaneously.Described second insulation course 214 forms top layer, for the electrical insulation between movable electrode 212 and the top electrodes of follow-up formation jointly with the first follow-up insulation course.
With reference to figure 8, above described second dielectric layer 228, movable electrode 212, form the 3rd dielectric layer 216, in described 3rd dielectric layer 216, form the second groove 217, the position of described second groove 217 is corresponding with the first groove 208.Described second groove 217 is for the Part II of follow-up formation cavity.
Then, in described second groove 217, the second sacrifice layer 218 is filled.The second sacrifice layer 218 in described second groove 217 is for supporting the top electrodes of follow-up formation, final second sacrifice layer 218 is removed with the first sacrifice layer 209 in the first groove 208, so that described second groove 217 and the first groove 208 form cavity jointly.The material of described second sacrifice layer 218 should select the material easily removed, namely preferred and the 3rd dielectric layer 216 and movable electrode 212 the material of described second sacrifice layer 218 has the material of higher etching selection ratio, can not destroy the material that other do not wish to remove like this when removal the second sacrifice layer 218.The such as material of described second sacrifice layer 218 can be carbon, germanium or polyamide (polyamide).In the present embodiment, the material of described second sacrifice layer 218 selects the material identical with the first sacrifice layer 209, its method for making can with reference to the method for formation first sacrifice layer 209, and described second sacrifice layer 218 can remove in same processing step with the first sacrifice layer 209.
Then, with reference to figure 9, described 3rd dielectric layer 216 forms the 4th dielectric layer 220, in described 4th dielectric layer 220, is formed with the first insulation course 223 and top electrodes 221, described first insulation course 223 is positioned at above the second groove 217, and described top electrodes 221 is positioned at above the first insulation course 223.On the one hand, described first insulation course 223 is for after the second sacrifice layer 218 is removed, described second groove 217 and the first groove 208 are closed and become cavity, on the other hand, the second insulation course 214 that described first insulation course 223 and movable electrode 212 cover forms top layer 224 jointly.The material of described first insulation course 223 is selected from monox, silicon oxynitride, silit, silicon nitride or combination wherein.As preferred embodiment, the material of described first insulation course 223 is identical with the material of described 4th dielectric layer 220, like this, can be formed while formation the 4th dielectric layer 223, saves processing step.As another embodiment of the present invention, described first insulation course 223 can also utilize extra processing step to be formed, and its material can be monox, silicon oxynitride, silit, silicon nitride or combination wherein.
The position of described top electrodes 221 is corresponding with movable electrode 212.Described top electrodes 221 side is electrically connected with the 3rd conductive plunger 222.Before formation bottom electrode 221, need to carry out metallization process, the position corresponding to the 3rd control end 203 and top electrodes 221 forms the 3rd conductive plunger 222.Described in described 3rd conductive plunger 222 through part, the 4th dielectric layer 220, the 3rd connects dielectric layer 216, second dielectric layer 228, first medium layer 207, and described 3rd conductive plunger 222 connects top electrodes 221 and the 3rd control end 203.
Described top electrodes 221 is for light splitting (be about to light one half reflection on its surface incident, one is semi-permeable), and described top electrodes 221 is semi-transparent metallic film.In the present embodiment, the material of top electrodes 221 is selected from metal, and the thickness of described top electrodes 221 is 30 ~ 300 dusts, and in described thickness range, top electrodes 221 has semi-transparent character.
Described first insulation course 223 and the second insulation course 214 form top layer 224 jointly.When described top layer 224 is moved to top electrodes 221 for movable electrode 212, make movable electrode 212 and top electrodes 221 electrical insulation mutually, and the distance controlled between movable electrode 212 and top electrodes 221 is the first preset distance (the first preset distance equals 1/4 of the first wavelength of light).In practice, the thickness of described top layer 224 needs to equal the first preset distance.Under the thickness needs meeting top layer 224 equal the prerequisite of the first preset distance, the thickness of the first insulation course 223 and the second insulation course 214 can be arranged according to actual.Under the satisfactory prerequisite of the rigidity of movable electrode 212, the thickness of the first insulation course 223 can be zero.
Then, with reference to Figure 10, etch described 4th dielectric layer 220, form through hole 225, described through hole 225 exposes described second sacrifice layer 217 surface.Described through hole 225 exposes the second sacrifice layer 218, and described through hole 225, for passing into gas or liquid, carries out removal first sacrifice layer 209 and the second sacrifice layer 218, and described through hole 225 depth-to-width ratio is unsuitable excessive, is difficult to its shutoff to avoid thickness depositing operation; Also unsuitable too small, in order to avoid affect the effect of removal first sacrifice layer 209 and the second sacrifice layer 218, described depth-to-width ratio specifically regulates selection according to the sacrifice layer material that will remove, thickness.Those skilled in the art can carry out free modulation according to mentioned above principle, and obtain through limited number of time experiment the scope comparatively optimized.In this enforcement, the depth-to-width ratio scope of described through hole 225 is 0.3 ~ 1.5.For the material of the first sacrifice layer 209 and the second sacrifice layer 218 for amorphous carbon, the present embodiment utilizes cineration technics (one of dry etch process) to remove amorphous carbon, be specially: at high temperature (100 ~ 350 degrees Celsius), oxonium ion is passed in described through hole, described oxonium ion is utilized to bombard amorphous carbon, described amorphous carbon is oxidized to the oxide of gaseous state, effectively sacrifice layer can be removed like this, and damage not caused to other structures.
Then with reference to Figure 11, then the first sacrifice layer (not shown) in the first groove 208 and the second sacrifice layer (not shown) in the second groove 217 is removed, overlayer 226 is formed at the 4th dielectric layer surface, described overlayer 226 covers through hole (not shown), is closed by through hole.After the first sacrifice layer in described first groove 208 and the second sacrifice layer in the second groove 217 are removed, first groove 208 and the second groove 217 form cavity 219, wherein the first groove 208 is as the Part I of described cavity 219, described second groove 217 is as the Part II of described cavity 219, and movable electrode 212 is positioned at cavity 219.
Described overlayer 226 is for closed through hole, and its material can be monox, silicon oxynitride, silit, silicon nitride or combination wherein.As preferred embodiment, the material of described overlayer 226 is identical with the material of the 4th dielectric layer 220, the 3rd dielectric layer 216, second dielectric layer 228, first medium layer 207, and form interlayer dielectric layer 227, for mutually insulated between each electrode and conductive plunger with the 4th dielectric layer 220, the 3rd dielectric layer 216, second dielectric layer 228, first medium layer 207.
And then described overlayer 226 forms optical filter 235.The thickness of described optical filter 235 needs the carrying out of the light modulator pixel unit formed specifically to arrange.Particularly, when the light modulator pixel unit needing to be formed is for modulating red light, described optical filter 235 should meet the blue ray in the white light of incidence and green light filtration, red light is exported to top electrodes 221; When needing the light modulator pixel unit formed can be used for modulating green light, described optical filter 235 should meet the blue ray in the white light of incidence and red light filtration, green light is exported to top electrodes 221; When needing the light modulator pixel unit formed can be used for modulating blue ray, described optical filter 235 should meet the green light in the white light of incidence and red light filtration, blue ray is exported to top electrodes 221.
To sum up, light modulator pixel unit described in embodiments of the invention is owing to having installed optical filter additional, therefore, described light modulator pixel unit can white light source (being such as comprise the lamp of the sun or common daylight lamp) as incident ray, and without the need to special monochromatic source as incident ray, because the cost sum of optical filter and white light source is usually well below the cost of monochromatic source, therefore, light modulator pixel unit of the present invention is compared with the light modulator pixel unit of existing employing monochromatic source, and cost reduces greatly;
Embodiments of the invention provide mems optical modulator, described mems optical modulator comprises the first light modulator pixel unit for modulating the first light, for modulating the second light modulator pixel unit of the second light and the 3rd light modulator pixel unit for modulating the 3rd light, described first light modulator pixel unit, second light modulator pixel unit and the 3rd light modulator pixel unit comprise optical filter, white light is filtered into three primary colours light by described optical filter, make described first light modulator pixel unit, second light modulator pixel unit and the 3rd light modulator pixel unit can modulate the first light respectively, second light or the 3rd light, the mems optical modulator of the embodiment of the present invention can be modulated the white light that white light source sends, without the need to special three primary light source, thus solve the problem that existing mems optical modulator normally cannot show under white light source, mems optical modulator of the present invention is particularly suitable for flat panel display systems.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (14)
1. a light modulator pixel unit, is characterized in that, comprising:
Substrate;
Described substrate has the interlayer dielectric layer containing cavity;
Bottom electrode, is positioned at the position of corresponding described cavity on described substrate;
Top electrodes, be positioned at the interlayer dielectric layer corresponding to bottom electrode position above described cavity, described top electrodes is semi-transparent metallic film;
Optical filter, is positioned on described top electrodes, for being three primary colours light by white light conversion;
Movable electrode, in cavity between described bottom electrode and top electrodes, described movable electrode is light reflection face towards the surface of top electrodes, the surface, light reflection face of described movable electrode has the second insulation course of rigid transparent, described movable electrode can move along the direction perpendicular to light reflection face, and lay respectively at primary importance, the second place or the 3rd position, make a kind of in three primary colours light through top electrodes and light after movable electrode reflection interferes at top electrodes.
2. light modulator pixel unit as claimed in claim 1, is characterized in that, electrical insulation between described bottom electrode and described substrate; Electrical insulation between described top electrodes and described substrate.
3. light modulator pixel unit as claimed in claim 1, is characterized in that,
Described interlayer dielectric layer covers described substrate surface;
Described bottom electrode is positioned at the interlayer dielectric layer covering substrate surface;
Described movable electrode is positioned at described cavity, has gap between the cavity wall of described movable electrode and described cavity, for holding the motion of movable electrode.
4. light modulator pixel unit as claimed in claim 3, it is characterized in that, described interlayer dielectric layer is monox, silicon oxynitride, silit, silicon nitride or combination wherein.
5. light modulator pixel unit as claimed in claim 3, it is characterized in that, also comprise: the control circuit being positioned at substrate, described bottom electrode is electrically connected with the first control end of described control circuit, described movable electrode is electrically connected with the second control end of described control circuit, described top electrodes is electrically connected with the 3rd control end of described control circuit, multiple second conductive plunger is formed in described interlayer dielectric layer, described multiple second conductive plunger is by the second control end and movable electrode electrical connection, described multiple second conductive plunger is about the Central Symmetry of movable electrode.
6. light modulator pixel unit as claimed in claim 1, it is characterized in that, described top electrodes material is metal, and thickness range is 30 ~ 300 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
7. light modulator pixel unit as claimed in claim 1, it is characterized in that, the material of described movable electrode is metal, and thickness range is 800 ~ 10000 dusts, and described metal can be silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
8. a method for making for light modulator pixel unit as claimed in claim 1, is characterized in that, comprising:
Substrate is provided;
Form first medium layer over the substrate;
Bottom electrode is formed on described first medium layer surface;
Described first medium layer and bottom electrode form second dielectric layer, described second dielectric layer comprises bottom insulation layer, described bottom insulation layer is positioned at the second dielectric layer above bottom electrode, and the material of described bottom insulation layer selects the material identical with second dielectric layer;
Etch described second dielectric layer, form the first groove in described second dielectric layer, expose described bottom insulation layer, the position of described first groove is corresponding with the position of described bottom electrode, for the Part I of follow-up formation cavity;
In described first groove, fill the first sacrifice layer, described first sacrifice layer covers described bottom insulation layer;
Described first sacrifice layer forms movable electrode;
Described movable electrode is formed the second insulation course;
Described movable electrode and second dielectric layer form the 3rd dielectric layer;
In described 3rd dielectric layer, form the second groove, the position of described second groove is corresponding with the first groove, for the Part II of follow-up formation cavity;
In described second groove, fill the second sacrifice layer, the position of described second sacrifice layer is corresponding with the position of the first sacrifice layer;
3rd dielectric layer forms the 4th dielectric layer;
The first insulation course and top electrodes is formed in described 4th dielectric layer, described first insulation course is positioned at above the second groove, described top electrodes is positioned at above the first insulation course, the material of described first insulation course is identical with the material of described 4th dielectric layer, described first insulation course and the second insulation course form top layer, and described top electrodes is semi-transparent metallic film;
Remove the first sacrifice layer and the second sacrifice layer, form cavity, described movable electrode is suspended in described cavity;
Described top electrodes forms optical filter.
9. the method for making of light modulator pixel unit as claimed in claim 8, it is characterized in that, described top electrodes is semi-transparent metallic film.
10. the method for making of light modulator pixel unit as claimed in claim 8, is characterized in that, before the described top electrodes of formation, also comprises:
In described 4th dielectric layer, form the step of through hole, and described through hole exposes the surface of described second sacrifice layer;
Described through hole is utilized to remove described first sacrifice layer and the second sacrifice layer.
The method for making of 11. light modulator pixel units as claimed in claim 10, it is characterized in that, after utilizing described through hole to remove described first sacrifice layer and the second sacrifice layer, also comprise: form overlayer at described 4th dielectric layer surface, described overlayer covers described through hole and is closed by described through hole, described overlayer and described first medium layer, second dielectric layer, the 3rd dielectric layer and the 4th dielectric layer form interlayer dielectric layer, and described optical filter is formed on described overlayer.
The method for making of 12. light modulator pixel units as claimed in claim 8, is characterized in that, also comprise:
In described interlayer dielectric layer, form multiple second conductive plunger, described multiple second conductive plunger is by the second control end and movable electrode electrical connection, and described multiple second conductive plunger is about the Central Symmetry of movable electrode.
The method for making of 13. light modulator pixel units as claimed in claim 8, it is characterized in that, described top electrodes material is metal, and thickness range is 30 ~ 300 dusts, and described metal is silver, aluminium, copper, titanium, platinum, gold, nickel, cobalt or combination wherein.
The method for making of 14. light modulator pixel units as claimed in claim 8, is characterized in that, also comprise: the step forming top layer on described movable electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110298381.2A CN102360119B (en) | 2011-09-29 | 2011-09-29 | Light modulator pixel unit and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110298381.2A CN102360119B (en) | 2011-09-29 | 2011-09-29 | Light modulator pixel unit and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102360119A CN102360119A (en) | 2012-02-22 |
| CN102360119B true CN102360119B (en) | 2014-12-31 |
Family
ID=45585477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110298381.2A Active CN102360119B (en) | 2011-09-29 | 2011-09-29 | Light modulator pixel unit and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102360119B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10599039B2 (en) * | 2016-09-14 | 2020-03-24 | Mattson Technology, Inc. | Strip process for high aspect ratio structure |
| CN114077013A (en) * | 2020-08-21 | 2022-02-22 | 华为技术有限公司 | Spatial light modulator and wavelength selective switch |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
| JP2002062491A (en) * | 2000-08-15 | 2002-02-28 | Canon Inc | Image pickup optical system and light quantity controller using interferometric modulation device |
| CN100523979C (en) * | 2004-09-27 | 2009-08-05 | Idc公司 | Method and device for multi-state interferometric light modulation |
| CN100349035C (en) * | 2005-01-13 | 2007-11-14 | 重庆大学 | Raster optical modulator with translational reflective mirror and array thereof |
| US7403180B1 (en) * | 2007-01-29 | 2008-07-22 | Qualcomm Mems Technologies, Inc. | Hybrid color synthesis for multistate reflective modulator displays |
| CN202256878U (en) * | 2011-09-29 | 2012-05-30 | 上海丽恒光微电子科技有限公司 | Optical modulator pixel unit |
-
2011
- 2011-09-29 CN CN201110298381.2A patent/CN102360119B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102360119A (en) | 2012-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101688975B (en) | Microelectromechanical device with optical function separated from mechanical and electrical function | |
| TWI480637B (en) | An electronic device and method making a photovoltaic black mask | |
| CN101852914A (en) | Mems structures, methods of fabricating mems components on separate substrates and assembly of same | |
| CN103168266A (en) | Display having an embedded microlens array | |
| CN101828146A (en) | Display with integrated photovoltaic device | |
| CN102449511A (en) | Illumination devices and methods of fabrication thereof | |
| CN104871066A (en) | Display device incorporating multiple dielectric | |
| CN104765181A (en) | Touch display panel, manufacturing method thereof and touch display device | |
| CN102360119B (en) | Light modulator pixel unit and manufacturing method thereof | |
| WO2011028504A4 (en) | Fabrication of a floating rocker mems device for light modulation | |
| CN101164171A (en) | Isolation layer for semiconductor devices and method for forming the same | |
| CN104145202B (en) | Mechatronic Systems device | |
| CN102323669B (en) | MEMS (Micro Electro Mechanical System) optical modulator pixel unit and making method thereof | |
| CN102236163B (en) | Micro-electro mechanical system (MEMS) light valve based display device and forming method thereof | |
| US20110261460A1 (en) | Optical filter, optical filter module, and analyzer | |
| CN202256878U (en) | Optical modulator pixel unit | |
| CN105070765A (en) | Thin film transistor, array substrate, display device and manufacturing method | |
| CN102401994B (en) | Optical modulator pixel unit and manufacturing method thereof | |
| CN102360120A (en) | Digital micro-mirror device and forming method thereof | |
| CN102236164A (en) | Display device based on micro-electromechanical system (MEMS) light valve and forming method thereof | |
| CN102338931B (en) | Optical modulator pixel unit and manufacturing method thereof | |
| US9772489B2 (en) | Display device having MEMS transmissive light valve and method for forming the same | |
| CN202256879U (en) | MEMS (Micro-Electro-Mechanical System) light modulator pixel unit | |
| CN101027592B (en) | Reduced capacitance display element | |
| US9217856B1 (en) | Process of fabricating transparent interferometric visible spectrum modulator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160408 Address after: 710075, arc building, No. 60, West Avenue, new industrial park, hi tech Zone, Shaanxi, Xi'an, 204 Patentee after: Xi'an Yisheng Photoelectric Technology Co., Ltd. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang hi tech park long East Road No. 3000 Building No. 5 room 501B Patentee before: Shanghai Lexvu Opto Mircoelectrics Technology Co., Ltd. |