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Light modulator pixel unit and manufacturing method thereof

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Publication number
CN102360119A
CN102360119A CN 201110298381 CN201110298381A CN102360119A CN 102360119 A CN102360119 A CN 102360119A CN 201110298381 CN201110298381 CN 201110298381 CN 201110298381 A CN201110298381 A CN 201110298381A CN 102360119 A CN102360119 A CN 102360119A
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light
electrode
modulator
pixel
unit
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CN 201110298381
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Chinese (zh)
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CN102360119B (en )
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唐德明
毛剑宏
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上海丽恒光微电子科技有限公司
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Abstract

An embodiment of the invention provides a light modulator pixel unit and a manufacturing method thereof. The light modulator pixel unit comprises that: an interlayer dielectric layer positioned on a substrate; a cavity in the interlayer dielectric layer; a bottom electrode, a movable electrode and a top electrode which are in the interlayer dielectric layer and have positions corresponding to the position of the cavity; an optical filter which is on the top electrode and is used for converting white light into three-primary-color light. The movable electrode has a light reflecting surface, and the top electrode is a semi-transparent metal film. By utilizing movement of the movable electrode in the cavity, a light modulator can carry out modulation on the three-primary-color light after conversion by the optical filter. The embodiment of the invention solves a problem that a present light modulator pixel unit generally needs to utilize monochromatic light emitted by a monochromatic light source as incident light, and cost of the light modulator pixel unit is reduced.

Description

光调制器像素单元及其制作方法 Light modulator pixel unit and its manufacturing method

技术领域 FIELD

[0001] 本发明涉及光调制器,特别涉及应用于平板显示系统的光调制器像素单元及其制作方法。 [0001] The present invention relates to an optical modulator, and more particularly relates to a pixel cell and its method of manufacturing an optical modulator used in flat panel display system.

背景技术 Background technique

[0002] 在投影系统中,关键的组成部件是光调制器。 [0002] In the projection system, the key components of an optical modulator. 现有的光调制器包括微机电部件(Micro-Electro-Mechanical Systems, MEMS),所述光调制器通过控制施加于微机电部件上的电信号,控制微机电部件进行移动,利用微机电部件的移动对入射光调制器的光线进行调制,输出具有一定灰度的光线。 The conventional light modulator comprises a micro electromechanical components (Micro-Electro-Mechanical Systems, MEMS), the optical modulator by controlling the electrical signal applied to the MEMS member, the control member is moved microelectromechanical using microelectromechanical member movement of the light modulator modulates incident light, the output light having a certain gradation.

[0003] 通常光调制器包括多个呈矩阵排布的像素单元,现有的光调制器像素单元有两种:利用光的反射原理的数字镜面器(digital mirror device, DMD)和利用光的衍射原理的光栅光阀(grating light valve, GLV) 0其中数字镜面器单个像素的能耗大,特别是在应用于高分辨率的微显示系统时,整体能耗大;而光栅光阀的单个像素的能耗小,整体能耗较小,且由于光栅光阀具有模拟灰度好、光学效率高、调制速度快等优点,成为目前的主流技术。 [0003] Generally light modulator comprises a plurality of pixel units arranged in matrix form, the conventional light modulator pixel unit in two ways: using light reflection principle of a digital mirror device (digital mirror device, DMD) using light and the principles of the diffraction grating light valve (grating light valve, GLV) 0 wherein the energy of a single pixel digital mirror is large, especially when applied to high resolution micro-display system, a large overall energy consumption; the single GLV pixel energy consumption, overall energy consumption is small, and since the grating light valve having an analog gray scale, high optical efficiency, high modulation speed, etc., become the mainstream technology. 在国际申请号为PCT/US2002/0096022002. 3. 27的国际申请中可以发现更多关于现有的光调制器像素单元信息。 International Application International Application No. PCT / US2002 / 0096022002. 3. 27 can be found in more conventional light modulator pixel unit information about.

[0004] 在实际中,发现现有的光调制器像素单元普遍需要利用单色光源发出的单色光线作为入射光线,所述单色光源可以通常为价格较为昂贵的LED灯,因此,现有的光调制器像素单元的成本较高。 [0004] In practice, it was found the conventional light modulator pixel unit generally requires a monochromatic light source emits monochromatic light as the incident light, a monochromatic light source may be generally more expensive LED lights, and therefore, the conventional high cost of the light modulator pixel unit.

发明内容 SUMMARY

[0005] 本发明的实施例解决的问题是提供一种光调制器像素单元、MEMS光调制器及其制作方法,解决了现有的光调制器像素单元普遍需要利用单色光源发出的单色光线作为入射光线的问题,降低了光调制器像素单元的成本。 [0005] The embodiment of the present invention to solve the problem of providing an optical modulator pixel unit, the MEMS light modulators and a manufacturing method solves the problem of the light modulator pixel unit generally require a monochromatic light source of monochromatic as a matter of incident ray of light, reducing the cost of the light modulator pixel unit.

[0006] 为了解决上述问题,本发明提供一种光调制器像素单元,包括: [0006] In order to solve the above problems, the present invention provides an optical modulator pixel unit, comprising:

[0007]衬底; [0007] a substrate;

[0008] 所述衬底上具有含有空腔的层间介质层; [0008] The interlayer dielectric layer having a cavity containing a substrate;

[0009] 底部电极,位于所述衬底上对应所述空腔的位置; [0009] The bottom electrode located on the substrate position corresponding to the cavity;

[0010] 顶部电极,位于所述空腔上方对应于底部电极位置的层间介质层内,所述顶部电极为半透光的金属薄膜; [0010] top electrode positioned above the cavity corresponding to the position of the interlayer dielectric layer of the bottom electrode, the top electrode is a semitransparent metal thin film;

[0011] 滤光片,位于所述顶部电极上,用于将白光转换为三基色光线; [0011] filter, positioned on the top electrode, for converting white light into three primary colors;

[0012] 可动电极,位于所述底部电极与顶部电极之间的空腔内,所述可动电极面向顶部电极的表面为光线反射面,所述可动电极能够沿垂直于光线反射面的方向移动,并分别位于第一位置、第二位置或第三位置,使得三基色光线中的一种透过顶部电极并经可动电极反射后的光线在顶部电极发生干涉。 [0012] The movable electrode is located within the cavity between the bottom electrode and a top electrode, a movable electrode facing the electrode surface of the top of the reflecting surface of the movable electrode is capable of a direction perpendicular to the reflecting surface of the direction, and are located in a first position, a second or third positions, such that one of the three primary colors of light through the top electrode and the interference by the movable electrode of the light reflected at the top electrode.

[0013] 可选地,所述底部电极与所述衬底之间电学绝缘;所述顶部电极与所述衬底之间电学绝缘。 [0013] Alternatively, the electrical insulation between the bottom electrode and the substrate; electrical insulation between the top electrode and the substrate.

[0014] 可选地,所述层间介质层覆盖所述衬底表面; [0014] Alternatively, the interlayer dielectric layer overlying the substrate surface;

[0015] 所述底部电极位于覆盖衬底表面的层间介质层内; [0015] The bottom electrode is covered with the interlayer dielectric layer surface of the substrate;

[0016] 所述可动电极位于所述空腔内,所述可动电极与所述空腔的空腔壁之间具有间隙,用于容纳可动电极的运动。 A gap between the wall of the cavity [0016] The movable electrode may be positioned within the cavity, the movable electrode and the cavity for accommodating movement of the movable electrode.

[0017] 可选地,所述层间介质层为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 [0017] Alternatively, the interlayer dielectric layer is a silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.

[0018] 可选地,还包括位于衬底内的控制电路,所述底部电极与所述控制电路的第一控制端电连接,所述可动电极与所述控制电路的第二控制端电连接,所述顶部电极与所述控制电路的第三控制端电连接,所述层间介质层内形成有多个第二导电插塞,所述多个第二导电插塞将第二控制端和可动电极电连接,所述多个第二导电插塞关于可动电极的中心对称。 [0018] Alternatively, the control circuit further comprises a substrate, the bottom electrode is electrically connected to the first control terminal of the control circuit, the movable electrode and the second control terminal of the control circuit connection, the top electrode is electrically connected to the third control terminal of the control circuit, the inter-layer is formed with a second plurality of conductive plugs, the second plurality of conductive plug within the control terminal of the second dielectric layer and the movable electrode electrically connected to a second plurality of conductive plugs on the symmetry center of the movable electrode.

[0019] 可选地,所述顶部电极材质为金属,厚度范围为30〜300埃,所述金属为银、铝、 铜、钛、钼金、金、镍、钴或者其中的组合。 [0019] Alternatively, the top electrode is made of a metal, a thickness in the range of 30~300 Å, the metal is silver, aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination thereof.

[0020] 可选地,所述可动电极的材质为金属,厚度范围为800〜10000埃,所述金属可以为银、铝、铜、钛、钼金、金、镍、钴或者其中的组合。 [0020] Alternatively, the movable electrode is made of metal, the thickness of 800~10000 Å, the metal may be silver, aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination thereof is .

[0021] 可选地,所述可动电极上形成有顶部绝缘层,所述顶部绝缘层用于增大可动电极的刚性。 [0021] Alternatively, the movable insulating layer having a top, said top insulating layer for increasing the rigidity of the movable electrode is formed on the electrode.

[0022] 相应地,本发明实施例还提供一种光调制器像素单元的制作方法,包括: [0022] Accordingly, embodiments of the present invention further provides a method for manufacturing a light modulator pixel elements, comprising:

[0023] 提供衬底; [0023] providing a substrate;

[0024] 在所述衬底上形成第一介质层; [0024] The first dielectric layer formed on the substrate;

[0025] 在所述第一介质层表面形成底部电极; [0025] The bottom electrode is formed on the first surface of the dielectric layer;

[0026] 在所述第一介质层和底部电极上形成第二介质层; [0026] forming a second dielectric layer on said first dielectric layer and the bottom electrode;

[0027] 在所述第二介质层内形成第一牺牲层; [0027] forming a first sacrificial layer within the second dielectric layer;

[0028] 在所述第一牺牲层上形成可动电极; [0028] forming a first movable electrode on the sacrificial layer;

[0029] 在所述可动电极和第二介质层上形成第三介质层; [0029] The third dielectric layer is formed on the movable electrode and the second dielectric layer;

[0030] 在可动电极上的第三介质层内形成第二牺牲层,所述第二牺牲层的位置与第一牺牲层的位置对应; [0030] The second sacrificial layer is formed within the third dielectric layer on the movable electrode, a position of the second sacrificial layer corresponds to the position of the first sacrificial layer;

[0031] 在所述第四介质层内形成顶部电极; [0031] forming a top electrode in the fourth dielectric layer;

[0032] 去除第一牺牲层和第二牺牲层,形成空腔,所述可动电极悬置于所述空腔内; [0032] removing the first sacrificial layer and the second sacrificial layer to form a cavity, said movable electrode is suspended in the cavity;

[0033] 在所述顶部电极上形成滤光片。 [0033] The filter is formed on the top electrode.

[0034] 可选地,所述顶部电极为半透光的金属薄膜。 [0034] Alternatively, the top electrode is a semitransparent metal thin film.

[0035] 可选地,在形成所述顶部电极之前,还包括: [0035] Alternatively, before forming the top electrode, further comprising:

[0036] 在所述第四介质层内形成通孔的步骤,所述通孔位于所述栅孔内,且所述通孔露出所述第二牺牲层的表面; Step [0036] The through hole formed in said fourth dielectric layer, said gate vias in said bore, and said through hole exposing a surface of the second sacrificial layer;

[0037] 利用所述通孔去除所述第一牺牲层和第二牺牲层。 [0037] with the through hole of the first sacrificial layer and removing the second sacrificial layer.

[0038] 可选地,在利用所述通孔去除所述第一牺牲层和第二牺牲层后,还包括:在所述第四介质层表面形成覆盖层,所述覆盖层覆盖所述童年空且将所述通孔封闭,所述覆盖层与所述第一介质层、第二介质层、第三介质层和第四介质层构成层间介质层,所述滤光片形成在所述覆盖层之上。 [0038] Alternatively, after removing the first sacrificial layer using a second sacrificial layer and the through hole, further comprising: forming a capping layer on the surface of the fourth dielectric layer, said covering layer covering the childhood empty and closing the through hole, the cover layer and the first dielectric layer, the second dielectric layer, third dielectric layer and the fourth dielectric layer constituting the dielectric layer, the optical filter is formed in the a cover layer above. [0039] 可选地,还包括: [0039] Optionally, further comprising:

[0040] 在所述层间介质层内形成多个第二导电插塞,所述多个第二导电插塞将第二控制端和可动电极电连接,所述多个第二导电插塞关于可动电极的中心对称。 [0040] is formed in the interlayer dielectric layer a second plurality of conductive plugs, the second plurality of conductive plug and the second control terminal electrically connected to the movable electrode, the plurality of second conductive plug About the center of symmetry of the movable electrode.

[0041] 可选地,所述顶部电极材质为金属,厚度范围为30〜300埃,所述金属为银、铝、 铜、钛、钼金、金、镍、钴或者其中的组合。 [0041] Alternatively, the top electrode is made of a metal, a thickness in the range of 30~300 Å, the metal is silver, aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination thereof.

[0042] 可选地,还包括:在所述可动电极上形成顶部绝缘层的步骤。 [0042] Optionally, further comprising the steps of: a top of the insulating layer is formed on said movable electrode.

[0043] 与现有技术相比,本发明具有以下优点: [0043] Compared with the prior art, the present invention has the following advantages:

[0044] 本发明的实施例所述的光调制器像素单元由于加装了滤光片,因此,所述光调制器像素单元可以白光光源(例如是包括太阳在内的自然光源或普通的日光灯)作为入射光线,而无需专门的单色光源作为入射光线,由于滤光片和白光光源的成本之和通常远远低于单色光源的成本,因此,本发明所述的光调制器像素单元与现有的采用单色光源的光调制器像素单元相比,成本大大降低; [0044] Example embodiments of the present invention, the light modulator pixel unit due to the installation of the filter, therefore, the light modulator pixel unit may be a white light source (e.g., a natural light or ordinary fluorescent including sun, including ) as the incident light, without special monochromatic light sources as the incident light, since white light source and filter cost and usually much lower than the cost of the monochromatic light source, and therefore, the light modulator pixel unit according to the present invention compared with the conventional light modulator pixel unit with monochromatic light source, greatly reduce the cost;

[0045] 本发明实施例还在所述可动电极上设置顶部绝缘层,从而增强了顶部电极的刚性,防止所述顶部电极由于反复使用产生金属疲劳,提高了可动电极的使用寿命; [0045] The embodiments of the present invention is also the top of the insulating layer may be provided on the movable electrode, thereby enhancing the rigidity of the top electrode, the top electrode to prevent metal fatigue due to repeated use and improve the life of the movable electrode;

[0046] 本发明的实施例提供MEMS光调制器,所述MEMS光调制器包括用于调制第一光线的第一光调制器像素单元、用于调制第二光线的第二光调制器像素单元和用于调制第三光线的第三光调制器像素单元,所述第一光调制器像素单元、第二光调制器像素单元和第三光调制器像素单元包括滤光片,所述滤光片将白色光线过滤为三基色光线,使得所述第一光调制器像素单元、第二光调制器像素单元和第三光调制器像素单元能够分别调制第一光线、第二光线或第三光线,本发明实施例的MEMS光调制器可以对白光光源发出的白光进行调制,无需专门的三基色光源,从而解决了现有的MEMS光调制器无法在白光光源下正常显示的问题,本发明的MEMS光调制器特别适合应用于平板显示系统。 Example [0046] The present invention provides a MEMS optical modulator, the MEMS optical modulator comprises a first optical modulator for modulating a first pixel unit of light, for modulating the second light a second light modulator pixel unit and a third optical modulator for modulating the pixel unit of the third light, the first light modulator pixel unit, the second light modulator pixel unit and the third light modulator pixel unit includes a filter, said filter the white sheet was filtered light three primary colors of light, such that the first light modulator pixel unit, the second light modulator pixel unit and the third light modulator capable of modulating a first light pixel unit, respectively, the second or third light beam , white MEMS light modulators embodiment of the present invention can emit white light source is modulated, no special light sources of three primary colors, thereby solving the problem of the conventional MEMS light modulators can not be properly displayed in the white light source, the present invention MEMS light modulators particularly suitable for flat panel display systems.

附图说明 BRIEF DESCRIPTION

[0047] 图1是本发明一个实施例的光调制器像素单元的结构示意图。 [0047] FIG. 1 is a schematic structural diagram of an optical modulator pixel unit embodiment of the present invention.

[0048] 图2是图1沿AA的剖面结构示意图。 [0048] FIG. 2 is a schematic cross-sectional structure taken along AA in FIG.

[0049] 图3是本发明的另一个实施例的光调制器像素单元制作方法流程示意图。 Light modulator pixel cell fabricating process schematic embodiment [0049] FIG. 3 is another embodiment of the present invention.

[0050] 图4〜图11是本发明一个实施例的光调制器像素单元的制作方法剖面结构示意图。 [0050] FIG. 4 ~ Fig. 11 is a schematic cross-sectional structure manufacturing method of the light modulator pixel unit according to the embodiment of the present invention.

[0051] 图12是图7沿AA的剖面结构示意图。 [0051] FIG. 12 is a schematic cross-sectional view along AA of FIG. 7 configuration. 具体实施方式 detailed description

[0052] 发明人发现,由于现有技术的光调制器通常是针对单色光源发出的单色光线进行调制,这使得现有的光调制器无法应用于白光光源的情况。 [0052] The inventors have found that, since the prior art optical modulator is typically a monochromatic light source for monochromatic light is modulated, which makes the conventional light modulators can not be applied to the case of white light source. 比如现有的光调制器在应用于微显示系统(例如手机或电子书)时,在白天的阳光下会出现显示屏的显示不良或无法显示的问题。 For example in the conventional optical modulator is applied to the micro-display system (e.g. a mobile phone or an electronic book), the display will display defects or problems can not be displayed in the light of day. 为了解决上述问题,发明人提出一种光调制像素单元,利用光的干涉原理对白色光线进行调制,所述光调制器像素单元主要应用于平板显示系统、微显示系统。 To solve the above problems, the invention proposes a light modulating pixel units, white light is modulated with a light interference principle, the light modulator pixel unit is mainly used in flat panel display system, the micro display system.

[0053] 下面对本发明的光调制器像素单元的器件结构进行说明。 [0053] Next, the configuration of the optical modulator device of the pixel unit according to the present invention will be described.

[0054] 请参考图2,图2是本发明一个实施例的光调制器像素单元的结构示意图。 [0054] Please refer to FIG 2, FIG. 2 is a schematic structural diagram of a light modulator pixel unit according to the present embodiment of the invention. 光调制器像素单元200包括: Light modulator pixel unit 200 includes:

[0055] 衬底201,所述衬底201上形成有层间介质层227,所述层间介质层227内形成有空腔219,位于所述层间介质层227内,所述空腔219具有空腔壁;底部电极205,位于所述衬底201上,且所述底部电极205的位置与所述空腔219的位置对应,所述底部电极205与控制电路的第一控制端202电连接; [0055] substrate 201, an interlayer dielectric layer 227, a cavity 219 is formed in the interlayer dielectric layer 227, positioned within the interlayer dielectric layer 227, the cavity 219 is formed on the substrate 201 having a cavity wall; bottom electrode 205, positioned on the substrate 201, and the position of the bottom electrode 205 to the position corresponding to the cavity 219, the bottom electrode 205 and the first control terminal of the control circuit 202 is electrically connection;

[0056] 顶部电极221,位于所述衬底201和空腔219上的层间介质层227内,所述顶部电极221的位置与所述底部电极205的位置对应,所述顶部电极221与控制电路的第三控制端203电连接,所述顶部电极221为半透光的金属薄膜; [0056] The top electrode 221, located in an interlayer dielectric layer 227 on the substrate 201 and the cavity 219, the top electrode and the bottom electrode 221 position corresponding to the position 205, the top electrode 221 and the control third control circuit terminal 203 is electrically connected to the top electrode 221 is a semitransparent metal thin film;

[0057] 滤光片235,位于所述顶部电极221上,所述滤光片235用于将输入所述光调制器像素单元的白色光线过滤为第一光线、第二光线或第三光线,所述第一光线、第二光线、第三光线为三基色光线; [0057] The filter 235, located on the top electrode 221, a filter 235 for inputting the white light of the light modulator pixel elements of the first light filter, second or third light beam, the first light, second light, third light three primary colors of light;

[0058] 可动电极212,位于所述底部电极205与顶部电极221之间的空腔内,所述可动电极212与控制电路的第二控制端204电连接,所述可动电极212面向顶部电极221的表面为光线反射面,所述可动电极212能够沿垂直于光线反射面的方向移动,所述可动电极212 与顶部电极221之间以及所述可动电极212与底部电极205之间具有电绝缘材料; [0058] The movable electrode 212, positioned within the cavity between the bottom electrode 205 and top electrode 221, the movable electrode 212 and the second control terminal of the control circuit 204 is electrically connected to the movable electrode 212 faces surface of the top electrode 221 is a reflecting surface of the movable electrode 212 is movable in a direction perpendicular to the direction of the reflecting surface, movable between a top electrode 212 and the electrode 221 and the movable electrode 212 and bottom electrode 205 between an electrically insulating material;

[0059] 所述顶部电极221、可动电极212、底部电极205位置相对应在控制电路控制下,所述可动电极212的位置会发生偏移,分别位于第一位置、第二位置或第三位置,当可动电极212位于第一位置时,入射至光调制器像素单元200的第一光线的经由顶部电极221反射的光线与透过顶部电极221的由可动电极212反射的并再透过顶部电极221的光线发生相消干涉;当可动电极212位于第二位置时,入射至光调制器像素单元200的第二光线的经由顶部电极221反射的光线与透过顶部电极221的由可动电极212反射的并再透过顶部电极221的光线发生相消干涉;当可动电极212位于第三位置时,入射至光调制器像素单元200 的第三光线的经由顶部电极221反射的光线与透过顶部电极221的由可动电极212反射的并再透过顶部电极221的光线的发生相消干涉;所述第一光线、第二光线、第三光线为三 [0059] The top electrode 221, movable electrode 212, the bottom electrode 205 at a position corresponding to the control circuit, the position of the movable electrode 212 of the shift will occur, respectively, in the first position or the second position three-position, when the movable electrode 212 in the first position, incident light reflected by the first top electrode 221 of the light 200 and the light modulator pixel unit and the movable electrode 212 is reflected and then transmitted through the top electrode 221 light transmitted through the top electrode 221, destructive interference occurs; when the movable electrode 212 in the second position, incident light reflected top electrode 221 via the light modulator pixel unit 200 and the second light through a top electrode 221 and then destructive interference of light through the top electrode 221 of the movable electrode 212 reflection occurs; when the movable electrode 212 in the third position, the third light modulator to the light incident on the pixel unit 200 is reflected by the top electrode 221 light transmitted through the top electrode and then the light reflected by the movable electrode 212 of the electrode 221 through a top 221, destructive interference occurs; the first light, second light, third light three 色光线。 Light color.

[0060] 具体地,作为一个实施例,所述衬底201为半导体衬底,例如为硅、锗或砷化镓等等。 [0060] Specifically, as an embodiment, the substrate 201 is a semiconductor substrate, for example, silicon, germanium, or gallium arsenide, and the like. 作为其他的实施例,所述衬底201还可以为玻璃基板。 As another embodiment, the substrate 201 may also be a glass substrate. 下面将以所述衬底201为半导体衬底为例进行说明。 Below the substrate 201 will be described as an example a semiconductor substrate.

[0061] 所述控制电路用于对衬底201内的各个结构(例如可动电极212、顶部电极221和底部电极20¾施加控制信号,所述控制电路具有第一控制端202、第二控制端204、第三控制端203。所述控制电路可以形成于所述衬底201内(当衬底201为半导体衬底时),也可以形成于另一半导体衬底内,通过导电结构与衬底201上的各个结构电连接。 [0061] The control circuitry for the various structures in the substrate 201 (e.g., movable electrode 212, top electrode 221 and bottom electrode 20¾ control signal is applied, the control circuit has a first control terminal 202, a second control terminal 204, a third control terminal 203. the control circuit may be formed within the substrate 201 (when the substrate is a semiconductor substrate 201) may be further formed in the semiconductor substrate, and the substrate through the conductive structure the respective structures 201 electrically connected.

[0062] 仍然参考图2,作为一个实施例,所述层间介质层227覆盖所述衬底201的表面,所述空腔219分为第一部分208和第二部分217,所述第一部分208位于空腔219的下部,所述第二部分217位于空腔219的上部。 [0062] Still referring to FIG. 2, as an embodiment, the interlayer dielectric layer 227 covers the surface of the substrate 201, the cavity 219 into a first portion 208 and second portion 217, the first portion 208 located in the cavity of the lower portion 219, second portion 217 located in the upper cavity 219.

[0063] 所述底部电极205位于所述衬底201上并与衬底201之间的层间介质层227内。 [0063] The bottom electrode 201 on the substrate 205 and positioned within the interlayer dielectric layer 201 between the substrate 227

[0064] 所述顶部电极221位于空腔219的第二部分217与衬底201之间的层间介质层227 内。 The interlayer dielectric layer 227 between the substrate 217 and the second portion 201 [0064] The top electrode 221 located in the cavity 219.

[0065] 所述可动电极212位于所述空腔219内,空腔219的尺寸和形状与可动电极212的尺寸和形状对应,所述可动电极212与所述空腔219的空腔壁之间具有间隙,用于容纳可动电极212的运动,所述可动电极212面积小于顶部电极221的面积。 [0065] The movable electrode 212 is located within the cavity 219 of the cavity 219 and the size and shape of the movable electrode 212 corresponding to the size and shape of the movable electrode 212 and the cavity 219 of the cavity a gap between the walls, for accommodating movement of the movable electrode 212, the movable electrode 212 may be smaller than the area of ​​the top electrode 221.

[0066] 所述可动电极212,位于所述底部电极205与顶部电极221之间,所述可动电极212与第二控制端204电连接,所述可动电极212面向顶部电极221的表面为光线反射面, 所述可动电极212能够沿垂直于光线反射面的方向移动,所述可动电极212与顶部电极221 之间以及所述可动电极212与底部电极221之间具有电绝缘材料。 [0066] The surface 221 of the movable electrode 212, between the bottom electrode 205 and top electrode 221 is located, the movable electrode 212 is connected electrically to the second control terminal 204, the movable electrode 212 facing the top electrode of the reflecting surface of the movable electrode 212 is movable in a direction perpendicular to the direction of the reflecting surface, movable between a top electrode 212 and the electrode 221 and has an electrical insulation between the movable electrode 212 and bottom electrode 221 material. 其中,本发明所述的光线反射面,具体是指平行光线入射至光线反射面后,经反射后形成的反射光线仍然为平行光线(即光线发射表面对入射光线的反射为镜面反射)。 Wherein the reflecting surface of the present invention, specifically refers to the parallel light beam incident on the reflecting surface, the reflected light is reflected and still form parallel light (i.e., light-emitting surface of a reflecting mirror for reflecting the incident light).

[0067] 进一步地,本实施例中,所述可动电极212与顶部电极221之间具有顶部绝缘层224,所述顶部绝缘层2M包括位于可动电极212上的第二绝缘层214和顶部电极221之间的第一绝缘层223,所述第一绝缘层223直接采用部分层间介质层227。 [0067] Further, in this embodiment, the top having a movable electrode 212 between the insulating layer 224 and the top electrode 221, the insulating top layer comprises a second insulating layer 214 2M and the top of the movable electrode 212 a first insulating layer 223 between the electrodes 221, the first insulating layer 223 is directly part of the interlayer dielectric layer 227 employed. 此外,还可以在顶部电极221下方额外形成绝缘材料以便对可动电极212和顶部电极221之间进行电学绝缘。 In addition, an additional 221 may also be formed under the insulating material between the top electrode to the top electrode 212 and the movable electrode 221 may be electrically insulating.

[0068] 所述可动电极212与底部电极205之间具有底部绝缘层211。 [0068] The movable bottom portion having an insulating layer 211 between the electrode 212 and bottom electrode 205. 本实施例中,所述底部绝缘层211直接采用部分的层间介质层227。 In this embodiment, the bottom insulating layer 211 directly using the portion of the interlayer dielectric layer 227. 此外,还可以在可动电极212与底部电极205之间额外形成绝缘材料以便可动电极212与底部电极205之间进行电学绝缘。 Further, an additional may be movable between the bottom electrode 212 and the electrode 205 is formed an insulating material so as to be electrically insulated from the movable electrode 212 and bottom electrode 205.

[0069] 所述顶部电极221、可动电极212、底部电极205位置相对应,所述可动电极212面积小于顶部电极221的面积,在控制电路控制下,所述可动电极212的位置会发生偏移。 [0069] The top electrode 221, movable electrode 212, the bottom electrode 205 corresponding to the position, the movable electrode 212 may be smaller than the area of ​​the top electrode 221, under control of the control circuit, the position of the movable electrode 212 will shifted.

[0070] 所述层间介质层227内形成有多个第二导电插塞215。 [0070] The interlayer is formed with a plurality of second conductive plugs 215 within the dielectric layer 227. 所述第二导电插塞215将第二控制端204和可动电极212电连接,所述多个第二导电插塞215关于可动电极212的中心对称。 The second conductive plug 215 of the second control terminal 204 and the movable electrode 212 is electrically connected to the second conductive plugs 215 about the center of symmetry of the movable electrode 212. 本实施例中,所述多个第二导电插塞215为2个,由于截面的关系,图1中仅示出了一个第二导电插塞215,后续图2中将会进一步介绍第二导电插塞215与可动电极212 和空腔219的关系。 In this embodiment, the second conductive plugs 215 into two, because of the cross section, FIG. 1 shows only one of the second conductive plug 215, follow-up will be further described in Figure 2 a second conductive relationship between the plug 215 and the movable electrode 212 and the cavity 219.

[0071] 所述层间介质层227内还形成有第一导电插塞206、第三导电插塞222。 [0071] The interlayer 227 further has a first conductive plug 206, the third conductive plugs 222 are formed a dielectric layer. 其中所述第一导电插塞206用于将第一控制端202和底部电极205电连接,所述第三导电插塞222 用于将第三控制端203和顶部电极221电连接。 Wherein the first conductive plug 206 for a first control terminal 202 and the bottom electrode 205 is electrically connected to the third conductive plug 222 for a third control terminal 203 and the top electrode 221 are electrically connected.

[0072] 进一步地,所述顶部电极221用于分光,即用于将从顶部电极221上方入射的光线一分为二,因此所述顶部电极221为半透光的金属薄膜。 [0072] Further, the top electrode 221 for splitting, i.e., a top electrode 221 from the light incident from above is divided into two, so the top electrode 221 is a metal thin film of semi-transparent. 发明人发现,金属薄膜在厚度为30〜300埃时,具有半透光的性质,可以将入射光线一半透过,一半反射。 The inventors have found that, when a metal thin film having a thickness of 30~300 Å, having a semi-transparent nature of the incident light may be transmitted through half and half reflection. 发明人还发现,金属薄膜半透光的性质主要取决于金属层的厚度,与入射光线的波长关系不大。 The inventors have also found that the nature of the semi-transparent metal thin film layer depends on the thickness of the metal, not the relationship between the wavelength of the incident light. 本发明利用金属薄膜厚度为30〜300埃时具有半透光的性质,将其作为半透光薄膜,进行分光。 The present invention uses a metal thin film having a thickness of semi-transparent property when 30~300 Å, which as a semi-transmissive film disperses. 其中, 所述金属为银、铝、铜、钛、钼金、金、镍、钴或者其中的组合。 Wherein the metal is silver, aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination thereof.

[0073] 由于顶部电极221位于层间介质层227内,光线自滤光片235入射光调制器像素单元200时,被所述滤光片235过滤为第一光线、第二光线或第三光线,所述第一光线、第二光线或第三光线到达所述顶部电极221,由于所述顶部电极221远离底部电极205的表面为光线反射面,因此,从顶部电极221上方入射的第一光线、第二光线或第三光线被顶部电极221分为第一部分和第二部分。 [0073] Since the top electrode 221 is located in the interlayer dielectric layer 227, the light from the filter 235 when the incident light modulator pixel unit 200, filtered by the filter 235 to the first light, second or third light beam the first light, second or third light beam reaching the top electrode 221, the top electrode due to the electrode 221 away from the bottom surface 205 of the first light reflecting surface, and therefore, the electrode 221 is incident from above the top , second or third light beam 221 by the top electrode into a first portion and a second portion. 即第一部分被顶部电极221反射面反射,第二部分透过所述顶部电极221入射可动电极212。 I.e., a first reflecting surface portion is the top electrode 221, a second portion of the top electrode 221 is incident through the movable electrode 212.

[0074] 作为一个实施例,所述可动电极212的材质为金属,所述金属为银、铝、铜、钛、钼金、金、镍、钴或者其中的组合。 [0074] As an embodiment, the movable electrode 212 is made of metal, the silver, aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination of metal therein. 所述可动电极212的厚度范围为800〜10000埃。 A thickness of the movable electrode 212 is 800~10000 Å. [0075] 进一步地,参考图2所示,所述第一绝缘层223为层间介质层227的一部分,这样不需要额外的工艺步骤形成第一绝缘层223。 [0075] Further, referring to FIG. 2, the first insulating layer 223 is a part of the interlayer dielectric layer 227, so that no additional process step of forming a first insulating layer 223. 所述第二绝缘层214形成于所述可动电极212 的光线反射面上方。 The second insulating layer 214 is formed on the light reflecting plane of the movable electrode 212. 所述第二绝缘层214为额外形成的电绝缘层,所述电绝缘层的材质为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 The second insulating layer 214 is formed of an additional electrically insulating layer, the electrically insulating layer is made of silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.

[0076] 作为本发明的一个实施例,所述第二绝缘层214随着可动电极212在空腔219内沿垂直于光线反射面的方向偏移运动而偏移运动。 [0076] As one embodiment of the present invention, the second insulating layer 214 as the deflection movement shift movement of the movable electrode 212 in a direction perpendicular to the light reflection surface 219 within the cavity. 由于可动电极223的材质为金属,制作过程中工艺条件的限制会造成厚度不均勻或使用过程中可动电极212反复运动会造成金属疲劳(金属失效,或失去弹性),本发明在可动电极212上方设置第二绝缘层214,可以增大可动电极212的刚性。 Since the movable electrode 223 is a metal material, the manufacturing process limits the process conditions will cause uneven thickness or use of the movable electrode 212 caused by metal fatigue repeated games (metal failure, or loss of elasticity), according to the present invention, the movable electrode a second insulating layer disposed above 212 214, may increase the rigidity of the movable electrode 212.

[0077] 因此,本发明所述的可动电极212在空腔219内偏移运动的时候,可动电极212上方的第二绝缘层214也会跟随可动电极212 —起进行偏移运动,另外,由于第二绝缘层214 是完全透光的,因此光线可以穿过第二绝缘层214到达可动电极212,并在可动电极212的表面发生反射。 [0077] Thus, the movable electrode 212 according to the present invention when the offset movement within the cavity 219, the movable second insulating layer 212 over the electrode 214 will follow the movable electrode 212-- offset from movement, Further, since the second insulating layer 214 is completely transparent, so that light can pass through the second insulating layer 214 reaches the movable electrode 212, and the surface of the movable electrode 212 is reflected.

[0078] 在其他的实施例中,若通过优化制作工艺、材质选择合适,也可使得可动电极212 具有良好的刚性,这样不用在可动电极212的光线反射面设置第二绝缘层214。 [0078] In other embodiments, by optimizing the production process if, appropriate material selection can also be such that the movable electrode 212 has good rigidity, so that no reflecting surface of the movable electrode 212 of the second insulating layer 214 is provided. 此时,顶部绝缘层仅由第一绝缘层223构成,即可动电极212和顶部电极221之间仅有第一绝缘层223 进行电学绝缘,本实施例中,所述第一绝缘层223直接利用所述层间介质层的一部分,也可以额外在顶部电极221下形成绝缘材料,比如采用氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 In this case, only the top of the insulating layer is constituted by a first insulating layer 223, to move only the first electrically insulating layer 223 for insulation between the electrode 212 and the top electrode 221, in this embodiment, the first insulating layer 223 directly using a portion of the interlayer dielectric layer may be additionally formed at the top of the electrode 221 is an insulating material, such as silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.

[0079] 本发明所述的顶部绝缘层224的厚度与调制的入射光线的波长有关,因此,顶部绝缘层2M的厚度应根据待调制的入射光线波长进行确定。 [0079] The present invention is a top insulating wavelength of the incident light 224 and the thickness of the modulation layer, and therefore, the thickness of the top insulating layer 2M shall be determined according to the wavelength of incident light to be modulated. 在本实施例中,顶部绝缘层224 的厚度应满足可动电极212运动至第一位置时,所述可动电极212的光线反射面与顶部电极221的距离为第一光线波长的1/4的奇数倍。 From the reflecting surface of the top electrode In the present embodiment, the thickness of the top insulating layer 224 should meet the movable electrode 212 is moved to a first position, the movable electrode 212 as a first wavelength of light 221 1/4 the odd multiples. 由于位于第一位置时,可动电极212与顶部电极221之间没有间隙,只有顶部绝缘层224,因此所述顶部绝缘层224的厚度与顶部电极221的厚度之和应等于第一光线波长的1/4的奇数倍。 Because in the first position, there is no gap between the movable electrode 212 and top electrode 221, only the top insulating layer 224, so the thickness of the top insulating layer 224 and top electrode 221 should be equal to the first thickness and the wavelength of light odd multiple of 1/4. 所述顶部绝缘层2M确定后,第一绝缘层223和第二绝缘层214的厚度可以根据实际情况进行设置。 2M after determining the top insulating layer, the thickness of the first insulating layer 223 and the second insulating layer 214 can be set according to actual situation.

[0080] 所述可动电极212与底部电极205之间的底部绝缘层211用于可动电极212与底部电极205电学绝缘。 [0080] The bottom of the movable electrode 212 between the electrode 205 and the bottom insulating layer 211 for insulating the movable electrode 212 and bottom electrode 205 electrically. 作为本发明的一个实施例,所述底部绝缘层211可以为所述层间介质层227的一部分,这样无需额外制作电学绝缘层;作为本发明的又一实施例,所述底部绝缘层211为额外制作的电学绝缘层,其材质选自氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 As an embodiment of the present invention, the bottom insulating layer 211 may be a part of the interlayer dielectric layer 227, so that no additional electrically insulating layer is produced; As a further embodiment of the present invention, the bottom insulating layer 211 is making additional electrical insulating layer, which is a material selected from silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.

[0081] 为了更好的说明本发明的光调制器像素单元结构,请参考图2,为图1沿AA的剖面结构示意图。 [0081] In order to better illustrate the light modulator pixel unit structure according to the present invention, please refer to FIG. 2, a schematic cross-sectional structure taken along AA in FIG. 所述可动电极212与所述空腔219的空腔壁之间具有间隙,以便可动电极212 的偏移运动,所述可动电极212通过多个第二导电插塞215与控制电路的第二控制端204 电连接,所述多个第二导电插塞215关于可动电极212的中心对称。 The movable electrode 212 between the cavity wall of the cavity 219 and having a gap, so that the movable electrode 212 of the deflection movement, the movable electrode 212 by a plurality of conductive plugs 215 and a second control circuit second control terminal 204 is electrically connected to the second conductive plugs 215 about the center of symmetry of the movable electrode 212. 所述第二导电插塞215 一方面用于可动电极212与第二控制端204电连接,另一方面,所述第二导电插塞215用于将可动电极212悬空于空腔219内,支撑可动电极212运动。 The second conductive plug 215 on the one hand for the movable electrode 212 is electrically connected to the second control terminal 204, on the other hand, the second conductive plug 215 is inserted within the cavity 219 for the movable electrode 212 suspended in supporting the movable electrode 212 moving. 所述第二导电插塞215的数目可以为2个或2个以上,本实施例中为2个,由于可动电极212通过第二导电插塞215接收来自控制电路的静电力,在保证可动电极212受到的静电力平衡的情况下,第二导电插塞212的排布可以根据实际进行设置。 The number of the second conductive plug 215 may be two or more than two, as in the present embodiment 2, since the movable electrode 212 through the second conductive plug from the control circuit receives an electrostatic force 215, the guarantee under equilibrium conditions, the second conductive plug 212 may be provided according to the actual arrangement for the movable electrode 212 by an electrostatic force of.

[0082] 下面结合图2,所述控制电路通过第一控制端202、第二控制端204、第三控制端203分别与所述底部电极205、可动电极212、顶部电极221电连接。 [0082] below with reference to FIG. 2, the control circuit 202 through a first control terminal, a second control terminal 204, a third control terminal 203, respectively and the bottom electrode 205, movable electrode 212, top electrode 221 are electrically connected. 由于顶部电极221、可动电极212之间设置顶部绝缘层224,因而顶部电极221、顶部绝缘层2M与可动电极212构成第一电容结构。 Since the top electrode 221, movable electrode 212 disposed between the top insulating layer 224, so that the top electrode 221, a top insulating layer 2M and the movable electrode 212 constitute a first capacitor structure. 若控制电路对第二控制端204、第三控制端203之间施加电信号(相当于对第一电容结构充电),在顶部电极221、可动电极212之间会产生第一静电力,所述第一静电力使得可动电极212(包括可动电极212上方的第二绝缘层214)向顶部电极221偏移运动(第二导电插塞215与可动电极212电连接,从而第二导电插塞215发生弹性变形),所述可动电极212会移动至顶部绝缘层224的第一绝缘层223与第二绝缘层214接触,此时所述可动电极212位于第一位置,所述可动电极212的光线反射面与顶部电极221之间具有第一预定距离,所述第一预定距离应等于第一光线波长的1/4的奇数倍。 If the control circuit of the second control terminal 204, 203 is applied between the control terminal of the third electrical signal (corresponding to the first charging capacitor structure), the top electrode 221, the movable generates electrostatic force between a first electrode 212, the said first electrostatic force such that the movable electrode 212 (comprising a second insulating layer 212 above the movable electrode 214) to offset the movement of the top electrode 221 (the second conductive plug 215 and the movable electrode 212 is electrically connected to the second conductive the plug 215 is elastically deformed), the movable electrode 212 moves to the top of the insulating layer 223 in contact with the first insulating layer 224 and the second insulating layer 214, the movable electrode 212 at this time is in the first position, the having a first predetermined distance between the reflecting surface of the movable electrode 212 and top electrode 221, the first predetermined distance should be equal to an odd multiple of 1/4 of the wavelength of the first light. 此时,若第一光线入射至光调制器像素单元200,则第一光线经过顶部电极221被分为第一部分和第二部分,其中第一部分被顶部电极221反射,第二部分则透过顶部电极221传输至可动电极212 的光线反射面,然后被光线反射面反射至顶部电极221,并透过顶部电极221向上传输,从而第一光线的第二部分相对于第一部分的波长差为第一光线波长的1/2的奇数倍。 At this time, when the first light is incident to the light modulator pixel unit 200, the light passes through the first top electrode 221 is divided into first and second portions, wherein the first portion is a top reflective electrode 221, the second part through a top electrode 221 is transmitted to the reflecting surface of the movable electrode 212, and then reflected by the reflecting surface 221 to the top electrode and the top electrode 221 through the transfer direction so that the second portion of the first light relative to the wavelength difference between the first portion of the first an odd multiple of a 1/2 wavelength of light. 由于第一光线的第二部分和第一部分频率相同,并且第二部分相对于第一部分的波长差为第一光线波长的1/2的奇数倍,因此,第一光线的第二部分与第一部分会发生相消干涉,光调制器像素单元200输出为零(全黑)。 Since the second portion of the first light and the first portion of the same frequency, and a second portion of the first portion with respect to the wavelength difference of an odd multiple of 1/2 wavelength of the first light, and therefore, the second portion and the first portion of the first light destructive interference occurs, the output of the light modulator pixel unit 200 is zero (all black).

[0083] 若控制电路对第二控制端204、第三控制端203之间没有施加电信号或者撤去电信号,则在顶部电极221、可动电极212之间产生的第一静电力消失,第二导电插塞215恢复至弹性形变前的状态,从而可动电极212在第二导电插塞215的牵引作用下,进行偏移运动至放松状态。 [0083] When the second control terminal of the control circuit 204, no electrical signal is applied between the control terminal 203 a third electrical signal or removed, then the top electrode 221, an electrostatic force may be generated between the first movable electrode 212 disappears, the two conductive plugs 215 returns to a state before elastic deformation, so that the movable electrode 212 in the second conductive plug 215 under the pulling action, move to a relaxed state offset. 此时所述可动电极212位于第二位置,可动电极212的光线反射面与顶部电极221之间具有第二预定距离,所述第二预定距离应等于第二光线波长的1/4的奇数倍,此时,若第二光线入射至光调制器像素单元200,则第二光线经过顶部电极221被分为第一部分和第二部分,其中第一部分被顶部电极221反射,第二部分则透过顶部电极221传输至可动电极212的光线反射面,然后被光线反射面反射至顶部电极221,并透过顶部电极221向上传输,从而第二光线的第二部分相对于第一部分的波长差为第二光线波长的1/2的奇数倍。 At this time, the movable electrode 212 in the second position, the movable having a predetermined distance between the second reflecting surface of the top electrode 221 and electrode 212, the second predetermined distance equal to the second wavelength of light to be 1/4 an odd multiple of this case, if the light is incident to the second light modulator pixel unit 200, the light passes through the second top electrode 221 is divided into first and second portions, wherein the first portion is a top reflective electrode 221, the second portion through the top electrode 221 is transmitted to the reflecting surface of the movable electrode 212, and then reflected by the reflecting surface 221 to the top electrode and the top electrode 221 through the transfer direction so that the second portion of the second light with respect to wavelength of the first portion the second difference is an odd multiple of 1/2 wavelength of light. 由于第二光线的第二部分和第一部分频率相同,并且第二部分相对于第一部分的波长差为第二光线波长的1/2的奇数倍,因此,第二光线的第二部分与第一部分发生相消干涉, 光调制器像素单元200输出为零(全黑)。 Since the second portion of the second light and the first portion of the same frequency, and a second portion of the first portion with respect to the wavelength difference is an odd multiple of 1/2 of the wavelength of the second light, and therefore, the second portion of the second light with the first portion destructive interference occurs, the output of the light modulator pixel unit 200 is zero (all black).

[0084] 可动电极212、底部电极205之间设置有底部绝缘层211,所述可动电极212、底部绝缘层211、底部电极205构成第二电容结构。 [0084] The movable electrode 212 has a bottom electrode 205 disposed between the bottom insulating layer 211, the movable electrode 212, a bottom insulating layer 211, the bottom electrode 205 form a second capacitor structure. 若控制电路对第一控制端202、第二控制端204之间施加电信号(相当于对第二电容结构充电),则在可动电极212、底部电极205之间产生第二静电力,所述第二静电力使得可动电极212朝向底部电极205偏移运动(第二导电插塞215与可动电极212电连接,从而第二导电插塞215发生弹性变形),所述可动电极212会移动至可动电极212与空腔219底部接触,此时所述可动电极212位于第三位置, 可动电极212的光线反射面与顶部电极221之间具有第三预定距离,所述第三预定距离应等于第三光线波长的1/4的奇数倍,此时,若第三光线入射至光调制器像素单元200,则第三光线经过顶部电极221被分为第一部分和第二部分,其中第一部分被顶部电极221反射,第二部分则透过顶部电极221传输至可动电极212的光线反射面,然后被光线反射面反射至顶部电极221,并透过顶部电极221向上传 If the control circuit of the first control terminal 202, applying an electrical signal (corresponding to the second charging capacitor structure) between the second control terminal 204, the movable electrode 212, generates electrostatic force between the second bottom electrode 205, the said second electrostatic force such that the movable electrode 212 toward the bottom electrode 205 deflection movement (the second conductive plug 215 of the movable electrode 212 is electrically connected to the second conductive plug 215 is elastically deformed), the movable electrode 212 will move the movable electrode 212 in contact with the bottom of the cavity 219, the movable electrode 212 at this time in the third position, the movable having a third predetermined distance between the reflecting surface of the top electrode 221 and electrode 212, the second three equal to a third predetermined distance to be an odd multiple of 1/4 wavelength of the light, in which case, when the third light incident on the light modulator pixel unit 200, the light passes through the top of the third electrode 221 is divided into first and second portions wherein the first portion is reflective top electrode 221, top electrode through the second portion 221 is transmitted to the reflecting surface of the movable electrode 212, and then reflected by the reflecting surface 221 to the top electrode and the top electrode 221 through the upload 输,从而第三光线的第二部分相对于第一部分的波长差为第三光线的波长的1/2的奇数倍。 Output, so that the second part of the third light with respect to the wavelength difference between the first portion is an odd multiple of 1/2 wavelength of the third light. 由于第三光线的第二部分和第一部分频率相同,并且第二部分与第一部分的波长差为第三光线的波长的1/2的奇数倍,因此,第三光线第二部分与第一部分发生相消干涉,光调制器像素单元200输出为零(全黑)。 Since the second portion of the third light and a first portion of the same frequency, and the wavelength difference between the first portion and the second portion is an odd multiple of half the wavelength of the third light, and therefore, the second portion of the third light occurs first portion destructive interference output light modulator pixel unit 200 is zero (all black).

[0085] 从上述分析可知,当可动电极212的光线反射面与顶部电极221的距离等于第一光线波长的1/4奇数倍时,光调制器像素单元200输入第一光线,输出为全黑,若光调制器像素单元200输入第二光线或第三光线,则此时的光调制器像素单元200相对于第二光线和第三光线为镜面,即光调制器像素单元200输入第二光线,反射第二光线并将其输出;或输入第三光线,同样反射第三光线并将其输出。 [0085] From the above analysis, when the distance from the reflecting surface of the movable electrode and the top electrode 212 of the first light 221 is equal to an odd multiple of 1/4 of the wavelength, the light modulator pixel unit 200 inputs the first light output for the whole black, if the light modulator pixel unit 200 inputs the second or third light beam, at this time, the light modulator pixel unit 200 with respect to the second and third light beam is a mirror surface, i.e., the optical modulator 200 inputs the second pixel unit light, reflected light and a second output; input or third light, the light reflected by the third and the same output.

[0086] 同理,对于当可动电极212的光线反射面与顶部电极221的距离等于第二光线波长的1/4奇数倍时,光调制器像素单元200输入第二光线,输出为全黑;光调制器像素单元200输入第三光线或第一光线,则此时光调制器像素单元200相对于第三光线或第一光线为镜面,即光调制器像素单元200输入第一光线,反射第一光线并将其输出;光调制器像素单元200输入第三光线,反射第三光线并将其输出。 When [0086] Similarly, for the case when the reflecting surface of the movable electrode and the top electrode 212 is equal to the second distance 221 is an odd multiple of 1/4 of the wavelength of light, the light modulator pixel unit 200 inputs a second light output is black ; input pixel light modulator 200 or the first cell of the third light beam, this time modulator pixel unit 200 with respect to the first or third light beam is a mirror, i.e., the light modulator pixel unit 200 inputs the first light, a first reflection and outputs a light; light modulator 200 inputs the pixel cell of the third light, the third reflected light and outputs it.

[0087] 对于当可动电极212的光线反射面与顶部电极221的距离等于第三波长的1/4奇数倍时,光调制器像素单元200输入第三光线,输出为全黑;此时光调制器像素单元200相对于第一光线或第二光线为镜面,即光调制器像素单元200输入第一光线,反射第一光线并将其输出;或输入第二光线,反射第二光线并将其输出。 When multiple, input 200 [0087] for the case when the reflecting surface of the movable electrode and the top electrode 212 a distance equal to 1/4 of the third wavelength 221 odd light modulator pixel unit third light output is black; this time modulation pixel unit 200 with respect to the first light or the second light is a mirror, i.e., the light modulator pixel unit 200 inputs the first light, the first reflected light and outputs it; or a second input light, reflected light and the second output.

[0088] 由于可以利用白色光线作为光源,从而本发明所述的MEMS光调制器可以直接利用日光灯或太阳光作为光源,利用滤光片对日光灯或太阳光发出的白色光线进行过滤,从而无需专门的单色光源,由于滤光片的成本远低于单色光源的成本,因此本实施例的MEMS 光调制器的成本比现有的光调制器降低。 [0088] Since the white light can be used as the light source, such MEMS optical modulator according to the present invention can be directly used as fluorescent light or sunlight, white light using a filter for sunlight or fluorescent light emitted by filtration, eliminating the need for special monochromatic light sources, due to the cost of the filter is much lower than the cost of a monochromatic light source, and therefore the cost of MEMS light modulators according to the present embodiment is lower than that of the conventional optical modulator.

[0089] 本发明实施例的MEMS光调制器可以对白光光源发出的白光进行调制,无需专门的三基色光源,从而解决了现有的MEMS光调制器无法在白光光源下正常显示的问题,本发明的MEMS光调制器特别适合应用于平板显示系统。 [0089] MEMS optical modulator white embodiment of the present invention can emit white light source is modulated, no special light sources of three primary colors, thereby solving the problem of the conventional MEMS light modulators can not be properly displayed in the white light source, the present MEMS light modulators invention is particularly suitable for flat panel display systems.

[0090] 本发明还提供了一种光调制器像素单元的制作方法,请参考图5,为本发明另一个实施例的光调制器像素单元制作方法流程示意图。 [0090] The present invention further provides a method for manufacturing a light modulator pixel unit, refer to FIG. 5, a schematic flowchart of an embodiment of manufacturing method the light modulator pixel unit to another embodiment of the present invention. 所述方法包括: The method comprising:

[0091] 步骤Si,提供衬底; [0091] Step Si, providing a substrate;

[0092] 步骤S2,在所述衬底上形成第一介质层; [0092] Step S2, the first dielectric layer is formed on the substrate;

[0093] 步骤S3,在所述第一介质层表面形成底部电极; [0093] Step S3, the bottom electrode is formed on the first surface of the dielectric layer;

[0094] 步骤S4,在所述第一介质层和底部电极上形成第二介质层; [0094] step S4, a second dielectric layer formed on said first dielectric layer and the bottom electrode;

[0095] 步骤S5,在所述第二介质层内形成第一牺牲层; [0095] step S5, forming a first sacrificial layer within the second dielectric layer;

[0096] 步骤S6,在所述第一牺牲层上形成可动电极; [0096] Step S6, the movable electrodes are formed on the first sacrificial layer;

[0097] 步骤S7,在所述可动电极和第二介质层上形成第三介质层; [0097] step S7, the movable electrode is formed on the third dielectric layer and second dielectric layers;

[0098] 步骤S8,在可动电极上的第三介质层内形成第二牺牲层,所述第二牺牲层的位置与第一牺牲层的位置对应; [0098] Step S8, the second sacrificial layer is formed within the third dielectric layer on the movable electrode, a position of the second sacrificial layer corresponds to the position of the first sacrificial layer;

[0099] 步骤S9,在所述第四介质层内形成顶部电极; [0099] Step S9, the top electrode is formed in said fourth dielectric layer;

[0100] 步骤S10,去除第一牺牲层和第二牺牲层,形成空腔,所述可动电极悬置于所述空腔内。 [0100] Step S10, the first sacrificial layer and the second sacrificial layer to form a cavity, said movable electrode is suspended in the cavity.

[0101] 下面结合实施例对本发明的技术方案进行详细的说明。 [0101] Next, the technical solution of the present invention will be described in detail in conjunction with embodiments. 请参考图4〜图11所示的本发明一个实施例的光调制器像素单元的制作方法剖面结构示意图。 The method of making a schematic cross-sectional structure of the light modulator pixel unit according to the present embodiment of the invention With reference to FIG 4 ~ 11 of FIG.

[0102] 首先,请参考如图4,提供衬底201,所述衬底201为半导体衬底。 [0102] First, refer to FIG. 4, a substrate 201, the substrate 201 is a semiconductor substrate. 作为一个实施例, 所述衬底201内形成有控制电路,所述控制电路具有第一控制端202、第二控制端204、第三控制端203。 As an example, a control circuit, said control circuit having a first control terminal 202, a second control terminal 204, a third control terminal 203 within the substrate 201 is formed. 所述第一控制端202、第二控制端204、第三控制端203用于对后续形成的底部电极、可动电极、顶部电极施加电信号,其布局结构与底部电极、可动电极、顶部电极的对应。 The first control terminal 202, a second control terminal 204, a third control terminal 203 for the subsequent formation of a bottom electrode, the movable electrode, a top electrode for applying an electric signal, its layout and structure the bottom electrode, the movable electrode, the top counter electrode. 根据实际需要可以进行具体设置。 It can be specifically set according to actual needs. 作为本发明的其他实施例,所述控制电路还可以形成于另一个半导体衬底内,通过导电结构与衬底201内后续形成的底部电极、可动电极和顶部电极电连接。 As another embodiment of the present invention, the control circuit may also be formed in another semiconductor substrate, a bottom electrode is formed by the subsequent electrically conductive structure and the substrate 201, the movable electrode and the top electrode are electrically connected.

[0103] 然后,参考图5,在衬底201上形成第一介质层207,并且在所述第一介质层207 表面形成底部电极205,所述底部电极205下方的第一介质层207内形成有第一导电插塞206,所述第一导电插塞206电连接底部电极205与第一控制端202。 [0103] Then, referring to FIG. 5, a first dielectric layer 207 is formed on the substrate 201, and electrode 205 is formed on the bottom surface of the first dielectric layer 207, formed in the first dielectric layer 205 below the bottom electrode 207 a first conductive plug 206, the first conductive plug 206 is electrically connected to bottom electrode 205 and the first control terminal 202.

[0104] 然后,请参考图6,在第一介质层207上形成第二介质层228,所述第二介质层2¾ 包括底部绝缘层211。 [0104] Then, referring to FIG. 6, the second dielectric layer 228 is formed on the first dielectric layer 207, the second dielectric layer comprises a bottom insulating layer 211 2¾. 所述第二介质层2¾的材质选自氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 2¾ material of the second dielectric layer is selected from silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof. 所述底部绝缘层211位于底部电极205上方的第二介质层228内。 The bottom insulating layer 211 is located within the bottom electrode 205 over the second dielectric layer 228. 所述底部绝缘层211用于底部电极205与后续形成的可动电极之间绝缘,其材质可以为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 The bottom insulating layer 211 is formed between the movable electrode with the insulating follow a bottom electrode 205, the material may be silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof. 作为优选的实施例,所述底部绝缘层211的材质选择与第二介质层2¾相同的材质,这样可以在形成第二介质层2¾的同时,形成所述底部绝缘层211,节约工艺步骤。 As a preferred embodiment, the bottom insulating layer of the same material selected 2¾ second dielectric material layer 211, which can simultaneously 2¾ forming a second dielectric layer, the bottom insulating layer 211 is formed, saving process steps. 所述底部绝缘层211也可以利用额外的工艺步骤形成,其材质可以为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 The bottom insulating layer 211 may be formed using an additional process step, the material may be silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.

[0105] 然后,仍参考图6,对所述第二介质层2¾进行刻蚀,在所述第二介质层2¾内形成第一凹槽208,露出所述底部绝缘层211。 [0105] Then, still with reference to FIG. 6, the second dielectric layer is etched 2¾, a first recess 208 formed in the second dielectric layer 2¾, the bottom insulating layer 211 is exposed. 所述第一凹槽208的位置与底部电极205的位置对应,用于后续形成空腔的第一部分,提供空间支持后续形成的可动电极进行偏移运动。 Position of the first groove 208 and the bottom electrode 205 corresponding to the position for forming a first subsequent portion of the cavity, to provide space to support a subsequently formed movable electrode offset movement.

[0106] 然后,继续参考图6,在所述第一凹槽208内填充第一牺牲层209,所述第一牺牲层209覆盖所述底部绝缘层211。 [0106] Then, with continued reference to FIG 6, a first sacrificial layer 209 is filled in the first recess 208, the first sacrificial layer 209 covers the bottom insulating layer 211.

[0107] 所述第一牺牲层209用于在后续形成可动电极时,支撑所述可动电极,最终将会被去除,因此第一牺牲层209的材料选自易于被去除的材质,即所述第一牺牲层209优选与第二介质层228以及后续形成的可动电极的材料具有较高刻蚀选择比的材料,这样在去除第一牺牲层209时可以不破坏其他不希望去除的物质。 [0107] The first sacrificial layer 209 is formed for subsequent movable electrode supporting the movable electrode, will eventually be removed, and therefore the material of the first sacrificial layer 209 is selected to be easily removed material, i.e. the first sacrificial layer 209 and the second dielectric layer 228 is preferably a material of the movable electrode and the subsequently formed having a high etching selectivity ratio of the material, so that removal of the first sacrificial layer may be removed without damaging the other undesirable 209 substance. 例如所述第一牺牲层209的材料可以为碳、锗或者聚酰胺(polyamide)。 For example, material of the first sacrificial layer 209 may be a carbon, germanium, or a polyamide (polyamide). 本实施例中,所述第一牺牲层209的材质为非晶碳(Amorphous Carbon),利用等离子体增强化学气相沉积(PECVD)工艺形成。 In this embodiment, the first sacrificial layer 209 is made of amorphous carbon (Amorphous Carbon), by a plasma enhanced chemical vapor deposition (PECVD) processes. 为了保证形成的非晶碳薄膜的质量,所述等离子增强化学气相沉积的工艺温度范围优选为350〜450°C。 To ensure the quality of the amorphous carbon film is formed, the plasma-enhanced chemical vapor deposition process temperature range is preferably 350~450 ° C.

[0108] 本发明通过利用等离子体化学气相沉积的方法填充于非晶碳于第一凹槽208内, 这样可以与CMOS工艺兼容,并且利用等离子体化学气相沉积方法形成的非晶碳结构致密, 能够通过灰化工艺被氧化为二氧化碳,易于气化去除,而不会对器件的其余部分造成影响。 [0108] The present invention utilizes a plasma chemical vapor deposition method of the amorphous carbon is filled, so that is compatible with CMOS processing in the first groove 208 by using an amorphous carbon structure and a plasma chemical vapor deposition method of forming a dense, can be oxidized to carbon dioxide by an ashing process, easily gasified removed, it will not affect the rest of the device. 需要说明的是,在利用等离子体增强化学气相沉积方法在第一凹槽208内填充第一牺牲层209之后,需要进行表面平坦化的步骤,以保证后续制作可动电极时的沉积步骤可以均勻地沉积金属。 Incidentally, in using a plasma enhanced chemical vapor deposition method after filling 209, steps need to be planarized surface of the first sacrificial layer, the deposition steps to ensure that the subsequent production of the movable electrode in the first recess 208 can be uniformly deposited metal. [0109] 请参考图7,在所述第二介质层228以及第一牺牲层209的表面形成可动电极212,所述可动电极212与底部电极205电学绝缘,所述可动电极212的位置与底部电极205 对应,所述可动电极212位于通过第二导电插塞215与第二光线控制端204电连接。 [0109] Please refer to FIG. 7, a first sacrificial layer 228 and the surface of the second dielectric layer 209 formed in the movable electrode 212, movable electrode 212 electrically insulated from the bottom electrode 205, the movable electrode 212 a position corresponding to the bottom electrode 205, the movable electrode 212 is located through the second conductive plugs 215 and a second end 204 is electrically connected to the control light. 在形成可动电极212之前,需要对应于第二控制端204、可动电极212的位置形成至少两个第二导电插塞215。 Before the movable electrode 212 is formed, corresponding to the second control terminal requires 204, the position of the movable electrode 212 is formed of at least two second conductive plugs 215. 所述第二导电插塞215关于可动电极212的中心对称。 The second conductive plug 215 may be symmetrical with respect to the center of the movable electrode 212. 所述第二导电插塞215贯穿所述第二介质层228、第一介质层207。 The second conductive plug 215 through the second dielectric layer 228, a first dielectric layer 207. 所述可动电极212远离底部电极205的一侧具有光线反射面,用于反射光线。 The movable electrode 212 away from the bottom 205 of the electrode side having a reflecting surface for reflecting light.

[0110] 请参考图12,为图7沿AA的剖面结构示意图。 [0110] Please refer to FIG. 12, FIG. 7 is a schematic cross-sectional structure along AA. 第一凹槽208形成于第二介质层228内,所述第一凹槽208内填充第一牺牲层209。 A first recess 208 formed in the second dielectric layer 228, the first sacrificial layer 208 filling the first groove 209. 可动电极212通过第二导电插塞215与第二控制端204电连接。 The movable electrode 212 and plug 215 is electrically connected to the second control terminal 204 through the second conductive. 所述第二导电插塞215关于可动电极212的中心对称分布。 The second conductive plug 215 about the center of the movable electrode 212 symmetrically. 由于第二导电插塞215 —方面用于将可动电极212电连接,另一方面,用于将后续形成的可动电极212悬空于后续形成的空腔内,并且支撑可动电极212运动。 Since the second conductive plug 215-- aspects for the movable electrode 212 is electrically connected, on the other hand, for the subsequent formation of the movable electrode 212 is suspended within the cavity of the subsequently formed, and supports the movement of the movable electrode 212. 由于可动电极212在控制电路的静电力作用下偏移运动,设置所述第二导电插塞215应关于可动电极212的中心对称分布,这样保证可动电极212受到的静电力平衡。 Since the movable electrode 212 can be shifted in the control circuit electrostatic force movement of the second conductive plug disposed to be symmetrical about the center 215 of the movable electrode 212, thus ensuring an electrostatic force balancing the movable electrode 212 exposed. 在保证可动电极212受到的静电力平衡的前提下,第二导电插塞215的数目还可以为3个或多个,其排布可以根据具体情况进行选择,在此不做详细的说明。 In ensuring the movable electrode 212 by electrostatic force balanced conclusion, the number of the second conductive plug 215 may also be three or more, which arrangement may be selected depending on the circumstances, which is not described in detail.

[0111] 本实施例中,所述第一凹槽208以及位于第一凹槽208内的部分可动电极212形状为方形。 [0111] In this embodiment, the first groove 208 and a first portion of the inner recess 208 of the movable electrode 212 has a square shape. 在其他的实施例中,所述第一凹槽208以及位于第一凹槽208内的部分可动电极212形状还可以为其他的形状,例如圆形等。 In other embodiments, the first groove 208 and a first portion located within the recess 208 of the movable electrode 212 may also be a shape other shapes, such as circular and the like.

[0112] 所述可动电极212的材质选自金属,所述金属可以是、铝、铜、钛、钼金、金、镍、钴或者其中的组合。 [0112] The movable chosen, the metal can be aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination wherein the material of the metal electrode 212. 所述可动电极212的厚度范围为800〜10000埃。 A thickness of the movable electrode 212 is 800~10000 Å.

[0113] 下面请参考图7,由于可动电极212的材质为金属,为了防止制作工艺限制导致的金属表面不均勻或反复移动底部电极造成金属疲劳失效,作为优选实施例,在形成可动电极212之后,需要形成覆盖可动电极212的第二绝缘层214。 [0113] Referring to FIG. 7 below, since the movable electrode 212 is made of metal, the production process in order to prevent the metal surface unevenness due to restrictions or repeatedly moving the bottom electrode causes metal fatigue failure, as a preferred embodiment, the movable electrode is formed after 212, the second insulating layer 214 needs to be formed to cover the movable electrode 212. 所述第二绝缘层214的材质选择具有一定刚性透明绝缘物质,以免影响可动电极212的光线反射面反光效果,同时也增大了可动电极212的刚性。 The material of the second insulating layer 214 is selected to have a certain rigidity transparent insulating material, so as not to affect the movable reflective effect of the reflecting surface of the electrode 212, but also increases the rigidity of the movable electrode 212. 所述第二绝缘层214与后续的第一绝缘层共同构成顶部绝缘层,用于可动电极212与后续形成的顶部电极之间的电学绝缘。 The second insulating layer 214 and the subsequent first insulating layer constitute the top insulating layer for electrical insulation between the movable electrode and the top electrode 212 is subsequently formed.

[0114] 参考图8,在所述第二介质层228、可动电极212上方形成第三介质层216,在所述第三介质层216内形成第二凹槽217,所述第二凹槽217的位置与第一凹槽208对应。 [0114] Referring to Figure 8, a third dielectric layer 216 is formed on the second dielectric layer 228, the movable upper electrode 212, a second recess 217 formed in the third dielectric layer 216, the second groove position 217 corresponding to the first groove 208. 所述第二凹槽217用于后续形成空腔的第二部分。 The second groove 217 is formed for a subsequent second portion of the cavity.

[0115] 然后,在所述第二凹槽217内填充第二牺牲层218。 [0115] Then, a second sacrificial layer 218 is filled in the second recess 217. 所述第二凹槽217内的第二牺牲层218用于支撑后续形成的顶部电极,最终第二牺牲层218将与第一凹槽208内的第一牺牲层209被移除,以便所述第二凹槽217和第一凹槽208共同构成空腔。 The second sacrificial layer 217 within the second groove 218 for supporting a top electrode formed later, a final second sacrificial layer 209 is removed 218 and a first sacrificial layer in the first groove 208, so that the a first groove 217 and second groove 208 together form a cavity. 所述第二牺牲层218的材质应选用易移除的材质,即所述第二牺牲层218优选与第三介质层216以及可动电极212的材料具有较高刻蚀选择比的材料,这样在去除第二牺牲层218时可以不破坏其他不希望去除的物质。 The material of the second sacrificial layer 218 should be selected easily removable material, i.e., the higher the etching selectivity of the second sacrificial material layer 218 and third dielectric layer 216 is preferably a material and having the movable electrode 212, so that when removing the second sacrificial layer 218 may not destroy the undesired removal of other substances. 例如所述第二牺牲层218的材料可以为碳、锗或者聚酰胺(polyamide)。 For example, material of the second sacrificial layer 218 may be a carbon, germanium, or a polyamide (polyamide). 本实施例中,所述第二牺牲层218的材质选择与第一牺牲层209相同的材质, 其制作方法可以参考形成第一牺牲层209的方法,并且,所述第二牺牲层218可以与第一牺牲层209在同一工艺步骤中移除。 In this embodiment, selecting the second material of sacrificial layer 218 is the same material as the first sacrificial layer 209, which can refer to the production method of the first sacrificial layer 209 is formed, and wherein the second sacrificial layer 218 may be the first sacrificial layer 209 is removed in the same process step. [0116] 然后,参考图9,在所述第三介质层216上形成第四介质层220,所述第四介质层220内形成有第一绝缘层223和顶部电极221,所述第一绝缘层223位于第二凹槽217上方,所述顶部电极221位于第一绝缘层223上方。 [0116] Then, referring to FIG. 9, the fourth dielectric layer 220 is formed on the third dielectric layer 216, a first insulating layer 223 and the top electrode 221 within the fourth dielectric layer 220 is formed, the first insulating a second layer 223 located above the recess 217, the top electrode 221 is located above the first insulating layer 223. 一方面,所述第一绝缘层223用于在第二牺牲层218被移除后,将所述第二凹槽217和第一凹槽208封闭成为空腔,另一方面,所述第一绝缘层223与可动电极212上覆盖的第二绝缘层214共同构成顶部绝缘层224。 In one aspect, the first insulating layer 223 is used after the second sacrificial layer 218 is removed, the second recess 217 and first recess 208 to become closed cavity, on the other hand, the first a second insulating layer 223 and the insulating layer 212 to cover the movable electrode 214 constitute a top insulating layer 224. 所述第一绝缘层223的材质选自氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 The first insulating layer 223 of a material selected from silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof. 作为优选的实施例,所述第一绝缘层223的材质与所述第四介质层220的材质相同,这样,可以在形成第四介质层223的同时形成,节约工艺步骤。 As a preferred embodiment, the material of the first insulating layer 223 and the fourth dielectric material layer 220 is the same, so that the fourth dielectric layer 223 may be simultaneously formed in the forming step process save. 作为本发明的又一实施例,所述第一绝缘层223还可以利用额外的工艺步骤形成,其材质可以为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 As a further embodiment of the present invention, the first insulating layer 223 may be formed using an additional process step, the material may be silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.

[0117] 所述顶部电极221的位置与可动电极212对应。 [0117] position of the top electrode 221 and the movable electrode 212 corresponds. 所述顶部电极221 —侧与第三导电插塞222电连接。 The top electrode 221 and the - side of the third conductive plug 222 is electrically connected to the plug. 在形成底部电极221之前,需要进行金属化工艺,对应于第三控制端203 和顶部电极221的位置形成第三导电插塞222。 Prior to forming the bottom electrode 221, the need for a metallization process, the position corresponding to the third control terminal 203 and the top electrode 221 form a third conductive plug 222. 所述第三导电插塞222贯穿部分所述第四介质层220、第三接介质层216、第二介质层228、第一介质层207,所述第三导电插塞222连接顶部电极221与第三控制端203。 The third conductive plug portion 222 through the fourth dielectric layer 220, third dielectric layer 216 then, the second dielectric layer 228, a first dielectric layer 207, the third conductive plug 222 is connected with the top electrode 221 third control terminal 203.

[0118] 所述顶部电极221用于分光(即将入射其表面的光线一半反射,一半透过),所述顶部电极221为半透光的金属薄膜。 [0118] The top electrode 221 for spectroscopic (incident surface thereof is about half of the light reflected, transmitted through a half), the top electrode 221 is a metal thin film of semi-transparent. 本实施例中,顶部电极221的材质选自金属,所述顶部电极221的厚度为30〜300埃,在所述厚度范围内,顶部电极221具有半透光的性质。 Embodiment, the top electrode 221 of the present embodiment a material selected from metal, the thickness of the top electrode 221 is 30~300 Å, within the thickness range, a top electrode 221 having a semi-transparent nature.

[0119] 所述第一绝缘层223和第二绝缘层214共同构成顶部绝缘层224。 [0119] The first insulating layer 223 and the second insulating layer 214 constituting the top of the insulating layer 224 together. 所述顶部绝缘层2M用于可动电极212向顶部电极221运动时,使得可动电极212和顶部电极221相互电学绝缘,并且控制可动电极212和顶部电极221之间的距离为第一预定距离(第一预定距离等于第一光线波长的1/4)。 2M said top insulating layer 221 for moving the movable electrode 212 to the top electrode such that the movable electrode 212 and top electrode 221 electrically insulated from each other, and controls the distance between the movable electrode 212 and top electrode 221 to a first predetermined distance (a first distance equal to 1/4 of the first predetermined wavelength of light). 在实际中,所述顶部绝缘层224的厚度需要等于第一预定距离。 In practice, the thickness of the top insulating layer 224 needs to be equal to a first predetermined distance. 在满足顶部绝缘层224的厚度需要等于第一预定距离的前提下,第一绝缘层223和第二绝缘层214的厚度可以根据实际进行设置。 When the thickness of the top insulating layer 224 to meet the needs of a predetermined distance equal to the first premise, the thickness of the first insulating layer 223 and the second insulating layer 214 may be set according to actual. 在可动电极212的刚性符合要求的前提下, 第一绝缘层223的厚度可以为零。 Under the premise to meet the requirements of the rigidity of the movable electrode 212, the thickness of the first insulating layer 223 may be zero.

[0120] 然后,参考图10,刻蚀所述第四介质层220,形成通孔225,所述通孔225露出所述第二牺牲层217表面。 [0120] Then, referring to FIG. 10, the fourth dielectric layer 220 is etched to form a through-hole 225, the through hole 225 to expose a surface 217 of the second sacrificial layer. 所述通孔225露出第二牺牲层218,所述通孔225用于通入气体或液体,进行去除第一牺牲层209和第二牺牲层218,所述通孔225深宽比不宜过大,以避免厚度沉积工艺难以将其封堵;也不宜过小,以免影响去除第一牺牲层209和第二牺牲层218的效果,所述深宽比根据要去除的牺牲层材质、厚度进行具体调节选择。 The through-hole 225 exposing the second sacrifice layer 218, the through hole 225 for passing the gas or liquid, removal of the first sacrificial layer 209 and the second sacrificial layer 218, the through hole is not too large an aspect ratio of 225 , a thickness of the deposition process is difficult to avoid plugging them; should not be too small, so as not to affect the effect of the first sacrificial layer 209 and the second sacrificial layer 218 is removed, the aspect ratio the specific material of the sacrificial layer to be removed, a thickness adjustment options. 本领域技术人员可以根据上述原则进行自由调制,并经过有限次实验获得较为优化的范围。 Those skilled in the art can be freely modulated according to the above principles, and after a limited number of experiments to acquire optimum range. 本实施中,所述通孔225的深宽比范围为0. 3〜1. 5。 In the present embodiment, the aspect ratio in the range of the through hole 225 is 0.5 3~1. 5. 以第一牺牲层209和第二牺牲层218的材质为非晶碳为例,本实施例利用灰化工艺(干法刻蚀工艺的一种)去除非晶碳,具体为:在高温下(100〜 350摄氏度),向所述通孔内通入氧离子,利用所述氧离子轰击非晶碳,将所述非晶碳氧化为气态的氧化物,这样可以有效将牺牲层去除,而不对其他结构造成损伤。 In sacrificial material of the first sacrificial layer 209 and the second amorphous carbon layer 218 as an example, the present embodiment utilizes an ashing process (a kind of dry etching process) amorphous carbon removal, in particular: at a high temperature ( 100~ 350 ° C), into said through hole to oxygen ions, the use of an oxygen ion bombardment amorphous carbon, amorphous carbon and oxygen into the gaseous oxides, which can effectively remove the sacrificial layer, but not on other structural damage.

[0121] 然后参考图11,然后去除第一凹槽208内的第一牺牲层(未示出)和第二凹槽217 内的第二牺牲层(未示出),在第四介质层表面形成覆盖层226,所述覆盖层2¾覆盖通孔(未示出),将通孔封闭。 [0121] Referring then to FIG. 11, and then remove the first sacrificial layer (not shown) and a second sacrificial layer (not shown) within the second recess 217 in the first groove 208, the surface of the fourth dielectric layer a cover layer 226, the capping layer 2¾ covering the through hole (not shown), the through hole is closed. 在所述第一凹槽208内的第一牺牲层和第二凹槽217内的第二牺牲层被去除以后,第一凹槽208和第二凹槽217形成空腔219,其中第一凹槽208作为所述空腔219的第一部分,所述第二凹槽217作为所述空腔219的第二部分,可动电极212位于空腔219内。 After the first sacrificial layer within the first recess and the second recess 208 in the second sacrificial layer 217 is removed, a first recess 208 and second recess 217 form a cavity 219, wherein the first recess grooves 208 as the first portion of the cavity 219, the second groove 217 as the second portion of the cavity 219, the movable electrode 212 is located within the cavity 219.

[0122] 所述覆盖层2¾用于封闭通孔,其材质可以为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 [0122] The cover layer 2¾ for closing the through hole, the material may be silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof. 作为优选的实施例,所述覆盖层226的材质与第四介质层220、第三介质层216、第二介质层228、第一介质层207的材质相同,并与第四介质层220、第三介质层216、第二介质层228、第一介质层207构成层间介质层227,用于各个电极以及导电插塞之间相互绝缘。 As a preferred embodiment, the material and covering the fourth dielectric layer 220 layer 226, third dielectric layer 216, 228, the same material as the first dielectric layer a second dielectric layer 207, and the fourth dielectric layer 220, a first three dielectric layer 216, second dielectric layer 228, dielectric layer 207 constituting a first interlayer dielectric layer 227, for each of the electrodes insulated from each other and interposed conductive plug.

[0123] 然后再所述覆盖层2¾上形成滤光片235。 [0123] and then the cover 235 is formed on the color filter layer 2¾. 所述滤光片235的厚度需要形成的光调制器像素单元的进行具体设置。 The thickness of the light modulator filter 235 is to be formed will be specifically provided in the pixel unit. 具体地,当需要形成的光调制器像素单元用于调制红色光线时,所述滤光片235应满足对入射的白色光线中的蓝色光线和绿色光线过滤,将红色光线输出至顶部电极221 ;当需要形成的光调制器像素单元能用于调制绿色光线时,所述滤光片235应满足对入射的白色光线中的蓝色光线和红色光线过滤,将绿色光线输出至顶部电极221 ;当需要形成的光调制器像素单元能用于调制蓝色光线时,所述滤光片235应满足对入射的白色光线中的绿色光线和红色光线过滤,将蓝色光线输出至顶部电极221。 Specifically, when the light modulator pixel unit to be formed for modulating red light, the optical filter 235 should meet the white light incident on the blue light and green light filter, the output of the red light to the top electrode 221 ; when the light modulator pixel element to be formed can be used to modulate the green light, the filter 235 should meet the incident white light rays in the blue and red light filter, the output of the green light to the top electrode 221; when the light modulator pixel element to be formed can be used to modulate the blue light, the optical filter 235 should meet the incident white light and red light in a green light filter, the output of the top electrode 221 to the blue light.

[0124] 综上,本发明的实施例所述的光调制器像素单元由于加装了滤光片,因此,所述光调制器像素单元可以白光光源(例如是包括太阳在内的自然光源或普通的日光灯)作为入射光线,而无需专门的单色光源作为入射光线,由于滤光片和白光光源的成本之和通常远远低于单色光源的成本,因此,本发明所述的光调制器像素单元与现有的采用单色光源的光调制器像素单元相比,成本大大降低; [0124] In summary, embodiments of the present invention, the light modulator pixel unit due to the installation of the filter, therefore, the light modulator pixel unit may be a white light source (e.g., comprising natural light or sun, including Common fluorescent lamp) as the incident light, without special monochromatic light sources as the incident light, since white light source and filter cost and usually much lower than the cost of the monochromatic light source, therefore, the optical modulator according to the present invention compared with the conventional unit pixel of the light modulator pixel unit using monochromatic light source, greatly reduce the cost;

[0125] 本发明的实施例提供MEMS光调制器,所述MEMS光调制器包括用于调制第一光线的第一光调制器像素单元、用于调制第二光线的第二光调制器像素单元和用于调制第三光线的第三光调制器像素单元,所述第一光调制器像素单元、第二光调制器像素单元和第三光调制器像素单元包括滤光片,所述滤光片将白色光线过滤为三基色光线,使得所述第一光调制器像素单元、第二光调制器像素单元和第三光调制器像素单元能够分别调制第一光线、第二光线或第三光线,本发明实施例的MEMS光调制器可以对白光光源发出的白光进行调制,无需专门的三基色光源,从而解决了现有的MEMS光调制器无法在白光光源下正常显示的问题,本发明的MEMS光调制器特别适合应用于平板显示系统。 Example [0125] The present invention provides a MEMS optical modulator, the MEMS optical modulator comprises a first optical modulator for modulating a first pixel unit of light, for modulating the second light a second light modulator pixel unit and a third optical modulator for modulating the pixel unit of the third light, the first light modulator pixel unit, the second light modulator pixel unit and the third light modulator pixel unit includes a filter, said filter the white sheet was filtered light three primary colors of light, such that the first light modulator pixel unit, the second light modulator pixel unit and the third light modulator capable of modulating a first light pixel unit, respectively, the second or third light beam , white MEMS light modulators embodiment of the present invention can emit white light source is modulated, no special light sources of three primary colors, thereby solving the problem of the conventional MEMS light modulators can not be properly displayed in the white light source, the present invention MEMS light modulators particularly suitable for flat panel display systems.

[0126] 本发明虽然已以较佳实施例公开如上,但其并不是用来限定本发明,任何本领域技术人员在不脱离本发明的精神和范围内,都可以利用上述揭示的方法和技术内容对本发明技术方案做出可能的变动和修改,因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰,均属于本发明技术方案的保护范围。 [0126] While the invention has been disclosed in the above preferred embodiments, but not intended to limit the present invention, anyone skilled in the art without departing from the methods and techniques within the spirit and scope of the invention are disclosed above may be utilized SUMMARY made to the technical solution of the present invention is possible variations and modifications, therefore, all without departing from the technical solutions of the present invention, the basis of any simple modification techniques essence of the invention of the above embodiments taken embodiments, equivalents, changes and modifications belong to the present invention scope of the technical solutions.

Claims (15)

1. 一种光调制器像素单元,其特征在于,包括: 衬底;所述衬底上具有含有空腔的层间介质层; 底部电极,位于所述衬底上对应所述空腔的位置;顶部电极,位于所述空腔上方对应于底部电极位置的层间介质层内,所述顶部电极为半透光的金属薄膜;滤光片,位于所述顶部电极上,用于将白光转换为三基色光线; 可动电极,位于所述底部电极与顶部电极之间的空腔内,所述可动电极面向顶部电极的表面为光线反射面,所述可动电极能够沿垂直于光线反射面的方向移动,并分别位于第一位置、第二位置或第三位置,使得三基色光线中的一种透过顶部电极并经可动电极反射后的光线在顶部电极发生干涉。 An optical modulator pixel unit comprising: a substrate; interlayer dielectric layer having a cavity containing said substrate; bottom electrode, a cavity corresponding to a position located on said substrate ; top electrode located over the cavity corresponding to the interlayer dielectric layer of a bottom electrode position, the top electrode is a semitransparent metal thin film; filter, positioned on the top electrode, means for converting the white light three primary colors of light; the surface of the movable electrode within the cavity between the bottom electrode and a top electrode, a movable electrode facing the top electrode of the reflecting surface of the movable electrode is capable of reflecting light in a direction perpendicular to the moving direction of the surface, and are located at the first position, a second or third positions, such that one of the three primary colors of light through the top electrode and the interference by the movable electrode of the light reflected at the top electrode.
2.如权利要求1所述的光调制器像素单元,其特征在于,所述底部电极与所述衬底之间电学绝缘;所述顶部电极与所述衬底之间电学绝缘。 2. The light modulator pixel unit according to claim 1, characterized in that the electrical insulation between the bottom electrode and the substrate; electrical insulation between the top electrode and the substrate.
3.如权利要求1所述的光调制器像素单元,其特征在于, 所述层间介质层覆盖所述衬底表面;所述底部电极位于覆盖衬底表面的层间介质层内;所述可动电极位于所述空腔内,所述可动电极与所述空腔的空腔壁之间具有间隙,用于容纳可动电极的运动。 3. The optical modulator pixel unit according to claim 1, wherein the interlayer dielectric layer covering the surface of the substrate; the bottom electrode is located within the coverage of the interlayer dielectric layer surface of the substrate; the a gap between the cavity wall of the movable electrode is located within the cavity, the movable electrode and the cavity for accommodating movement of the movable electrode.
4.如权利要求3所述的光调制器像素单元,其特征在于,所述层间介质层为氧化硅、氮氧化硅、碳化硅、氮化硅或者其中的组合。 Of the light modulator pixel unit as claimed in claim 3, wherein the interlayer dielectric layer is a silicon oxide, silicon oxynitride, silicon carbide, silicon nitride, or a combination thereof.
5.如权利要求3所述的光调制器像素单元,其特征在于,还包括:位于衬底内的控制电路,所述底部电极与所述控制电路的第一控制端电连接,所述可动电极与所述控制电路的第二控制端电连接,所述顶部电极与所述控制电路的第三控制端电连接,所述层间介质层内形成有多个第二导电插塞,所述多个第二导电插塞将第二控制端和可动电极电连接,所述多个第二导电插塞关于可动电极的中心对称。 5. The optical modulator pixel unit according to claim 3, characterized in that, further comprising: a control circuit located within the substrate, the bottom electrode and a first control terminal electrically connected to the control circuit, said the movable electrode and the second control terminal is electrically connected to the control circuit, the top electrode is electrically connected to the third control terminal of the control circuit, the interlayer is formed with a plurality of second conductive plug within the dielectric layer, the a second plurality of said second conductive plug and a control terminal electrically connected to the movable electrode, a second plurality of conductive plugs on the center of symmetry of the movable electrode.
6.如权利要求1所述的光调制器像素单元,其特征在于,所述顶部电极材质为金属,厚度范围为30〜300埃,所述金属为银、铝、铜、钛、钼金、金、镍、钴或者其中的组合。 6. The optical modulator pixel unit according to claim 1, wherein the top electrode is made of a metal, a thickness in the range of 30~300 Å, the metal is silver, aluminum, copper, titanium, molybdenum, gold, gold, nickel, cobalt, or a combination thereof.
7.如权利要求1所述的光调制器像素单元,其特征在于,所述可动电极的材质为金属, 厚度范围为800〜10000埃,所述金属可以为银、铝、铜、钛、钼金、金、镍、钴或者其中的组合。 7. The optical modulator pixel unit according to claim 1, wherein the movable electrode material is a metal, a thickness ranging 800~10000 Å, the metal may be silver, aluminum, copper, titanium, gold molybdenum, gold, nickel, cobalt, or a combination thereof.
8.如权利要求1所述的光调制器像素单元,其特征在于,所述可动电极上形成有顶部绝缘层,所述顶部绝缘层用于增大可动电极的刚性。 8. The optical modulator pixel unit according to claim 1, wherein said movable insulating layer having a top electrode formed on the top insulating layer for increasing the rigidity of the movable electrode.
9. 一种如权利要求1所述的光调制器像素单元的制作方法,其特征在于,包括: 提供衬底;在所述衬底上形成第一介质层; 在所述第一介质层表面形成底部电极; 在所述第一介质层和底部电极上形成第二介质层; 在所述第二介质层内形成第一牺牲层; 在所述第一牺牲层上形成可动电极;在所述可动电极和第二介质层上形成第三介质层;在可动电极上的第三介质层内形成第二牺牲层,所述第二牺牲层的位置与第一牺牲层的位置对应;在所述第四介质层内形成顶部电极;去除第一牺牲层和第二牺牲层,形成空腔,所述可动电极悬置于所述空腔内; 在所述顶部电极上形成滤光片。 A manufacturing method of the light modulator pixel unit as claimed in claim, characterized in that, comprising: providing a substrate; forming a first dielectric layer on said substrate; a first dielectric layer on the surface forming a bottom electrode; a second dielectric layer formed on said first dielectric layer and the bottom electrode; forming a first sacrificial layer within the second dielectric layer; forming a first movable electrode on the sacrificial layer; the said movable electrode is formed on the third dielectric layer and second dielectric layer; forming a second sacrificial layer in the third dielectric layer on the movable electrode, a position of the second sacrificial layer corresponds to the position of the first sacrificial layer; formed in the fourth dielectric layer top electrode; removing the first sacrificial layer and the second sacrificial layer to form a cavity, said movable electrode is suspended in the cavity; forming a filter on the top electrode sheet.
10.如权利要求9所述的光调制器像素单元的制作方法,其特征在于,所述顶部电极为半透光的金属薄膜。 10. The manufacturing method of the light modulator pixel unit 9 claim, wherein the top electrode is a semitransparent metal thin film.
11.如权利要求9所述的光调制器像素单元的制作方法,其特征在于,在形成所述顶部电极之前,还包括:在所述第四介质层内形成通孔的步骤,所述通孔位于所述栅孔内,且所述通孔露出所述第二牺牲层的表面;利用所述通孔去除所述第一牺牲层和第二牺牲层。 11. The manufacturing method of the light modulator pixel unit 9 claim, wherein, before forming the top electrode, further comprising the steps of: forming a through hole in said fourth dielectric layer, said via the gate bore hole is located, and the exposed surface of the through hole of the second sacrificial layer; removal using the through-hole of the first sacrificial layer and the second sacrificial layer.
12.如权利要求11所述的光调制器像素单元的制作方法,其特征在于,在利用所述通孔去除所述第一牺牲层和第二牺牲层后,还包括:在所述第四介质层表面形成覆盖层,所述覆盖层覆盖所述童年空且将所述通孔封闭,所述覆盖层与所述第一介质层、第二介质层、第三介质层和第四介质层构成层间介质层,所述滤光片形成在所述覆盖层之上。 12. The manufacturing method of the light modulator pixel unit as claimed in claim, characterized in that, after removing the first sacrificial layer using a second sacrificial layer and the through hole, further comprising: in the fourth surface of the dielectric layer is formed covering layer, said covering layer, and the empty childhood closing the through hole, the first dielectric layer and the cover layer, second dielectric layer, third dielectric layer and the fourth dielectric layer constituting the interlayer dielectric layer, said color filter formed over the cover layer.
13.如权利要求9所述的光调制器像素单元的制作方法,其特征在于,还包括:在所述层间介质层内形成多个第二导电插塞,所述多个第二导电插塞将第二控制端和可动电极电连接,所述多个第二导电插塞关于可动电极的中心对称。 13. The manufacturing method of the light modulator pixel unit 9 claim, characterized in that, further comprising: forming a plurality of second electrically conductive layer within the interlayer dielectric plug, the second conductive plug plug the second control terminal and the movable electrode electrically connected to a second plurality of conductive plugs on the center of symmetry of the movable electrode.
14.如权利要求9所述的光调制器像素单元的制作方法,其特征在于,所述顶部电极材质为金属,厚度范围为30〜300埃,所述金属为银、铝、铜、钛、钼金、金、镍、钴或者其中的组I=IO 14. The manufacturing method of the light modulator pixel unit 9 claim, wherein the top electrode is made of a metal, a thickness in the range of 30~300 Å, the metal is silver, aluminum, copper, titanium, gold molybdenum, gold, nickel, cobalt, or a group to which I = IO
15.如权利要求9所述的光调制器像素单元的制作方法,其特征在于,还包括:在所述可动电极上形成顶部绝缘层的步骤。 15. The manufacturing method of the light modulator pixel unit 9 claim, characterized in that, further comprising: a step of forming an insulating layer on top of the movable electrode.
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Citations (6)

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