CN102354536B - Test interface structure, test circuit and test method - Google Patents
Test interface structure, test circuit and test method Download PDFInfo
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- CN102354536B CN102354536B CN201110187397.6A CN201110187397A CN102354536B CN 102354536 B CN102354536 B CN 102354536B CN 201110187397 A CN201110187397 A CN 201110187397A CN 102354536 B CN102354536 B CN 102354536B
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- module
- digital signal
- control signal
- weld pad
- small current
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Abstract
The invention provides a test interface structure, a test circuit and a test method. The test interface structure for testing a flash memory body module comprises a test pad, a control signal module, a digital signal module, a high voltage module and an undercurrent signal module, and an arbitrary switch among the digital signal module, the high voltage module and the undercurrent signal module can be realized under the control of a control signal output by the control signal module to realize the multiplex function.
Description
Technical field
The present invention relates to flash memory design field, it is more particularly related to a kind of be used for flash memory body module
Test interface structure, the test circuit using this test interface structure and the corresponding method of testing tested.
Background technology
In the design and manufacture process of flash memories, need using test interface, flash memory body module to be carried out
Test, to guarantee the reliability of flash memories.Specifically, flash memory body module specifically include flash memory matrix,
Modular circuit such as decoding circuit and charge pump etc..Test interface can be used for the internal high pressure of test flash memory memory module, inside
Electric current and input and output logic function, it may also be used for plus high-pressure, impressed current.
In the prior art, existing test interface is usually single, for example, can only test low-voltage, or can only survey
Examination electric current, or only possess logic function.Even if there being multiplexing, but also not by high voltage, small current and digital logical hybrid
Integrated.
With manufacturing cost control increasingly stricter, the drawbacks of the test interface of prior art shows, using two or
Three interfaces of person are realizing high voltage, the input and output of small current and Digital Logic.So not only waste chip area, Er Qieying
Ring the testing efficiency of chip, improve testing cost.
By high voltage, small current and digital logical hybrid are integrated into a test interface to the present invention, so can greatly contract
Little chip area, thus can produce more chips on wafer.In addition, in the fixing situation of tester hardware condition
Under, such structure can realize more massive test simultaneously, thus improving testing efficiency, reduce testing cost.
Content of the invention
The present invention is for reducing chip interface area, in the case that tester hardware condition is fixing, realizes more extensive
Test simultaneously and reduce production cost.Thus that invents ties for the brand-new test interface that flash memory body module is tested
Structure, test circuit and method of testing.
According to the first aspect of the invention, there is provided a kind of test interface for being tested to flash memory body module
Structure, it includes：Testing weld pad, control signal module, digital signal module, high-pressure modular (more than 12V) and small current letter
Number module (being accurate to na), wherein under the control of the control signal that control signal module is exported, you can realizes numeral letter
Any switching laws between number module, high-pressure modular and current signal module, to realize the function of multiplexing.
Preferably, in the above-mentioned test interface structure for being tested to flash memory body module, flash memory
Module includes the modular circuits such as flash memory matrix, decoding circuit and charge pump.
Preferably, in the above-mentioned test interface structure for being tested to flash memory body module, digital signal mould
Transmitting digital signals between block and testing weld pad；And when needing supplied with digital signal, high-pressure modular and small current module will
For high-impedance state, control signal module enables with output control signal, and testing weld pad connects to digital signal module, numeral
Signal is input to chip internal under control of the control signal；To when needing output digit signals, high-pressure modular and current module
For high-impedance state, control signal module enables with output control signal, and testing weld pad connects to digital signal module, so that number
Word signal output is to testing weld pad.
Preferably, in the above-mentioned test interface structure for being tested to flash memory body module, high-pressure modular with
High voltage signal is transmitted between testing weld pad；And when needing high input voltage signal, control signal module disconnects numeral letter
Number module, high-pressure modular enables, so that high voltage signal directly can be input to high-pressure modular from testing weld pad, this high voltage
(NMOS tube that grid end adds vdd voltage plays automatic isolation high pressure not to interfere with or damage digital module and small-signal module
Effect)；When needing output HIGH voltage, control signal module disconnects digital signal module, and high-pressure modular enables, and internal high voltages can
Directly to export testing weld pad from high-pressure modular.
Preferably, in the above-mentioned test interface structure for being tested to flash memory body module, small current signal
Small current signal is transmitted between module and testing weld pad；When needing input current signal, control signal module disconnects digital signal
Module, high-pressure modular directly can be input to chip internal from testing weld pad for high-impedance state, small current；When needs output electricity
Stream signal, control signal module disconnects digital signal module, and, for high-impedance state, small current is directly from small current mould for high-pressure modular
Block exports testing weld pad.
Test interface structure according to a first aspect of the present invention, because a test interface can be multiplexed three kinds of functions, because
This, be equivalent to and save two hardware resources.So, the area of chip will be less, under conditions of tester hardware is fixing, real
Now more concurrent testings.
According to the second aspect of the invention, there is provided a kind of inclusion test interface knot described according to a first aspect of the present invention
The test circuit of structure.Due to employing test interface structure described according to a first aspect of the present invention, therefore, people in the art
Member is it is understood that test circuit according to a second aspect of the present invention is equally capable of according to the first aspect of the invention
Advantageous Effects achieved by test interface structure.That is, because a test interface can be multiplexed three kinds of functions, therefore,
Be equivalent to and save two hardware resources.So, the area of chip will be less, under conditions of tester hardware is fixing, realize
More concurrent testings
According to the third aspect of the invention we, there is provided one kind is surveyed to flash memory body module using test interface structure
Examination method of testing, described test interface structure include testing weld pad, control signal module, digital signal module, high-pressure modular,
And small current signaling module, described method of testing includes：Under the control of the control signal that control signal module is exported, that is,
Any switching laws between achievable digital signal module, high-pressure modular and current signal module, to realize the work(multiplexing
Energy.
Similarly, using test interface structure, flash memory body module is being tested according to a third aspect of the present invention
Method of testing in, because a test interface can be multiplexed three kinds of functions, therefore, be equivalent to and save two hardware resources.
So, the area of chip will be less, under conditions of tester hardware is fixing, realize more concurrent testings
Brief description
In conjunction with accompanying drawing, and by reference to detailed description below, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features are more easily understood, wherein：
Fig. 1 schematically shows according to embodiments of the present invention connecing for the test that flash memory body module is tested
The block diagram of mouth structure.
It should be noted that accompanying drawing is used for the present invention is described, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.And, in accompanying drawing, same or like element indicates same or like label.
Reference number explanation：
Pad：Pad
CS(Control Signal)：Control signal
DS(Digital Signal)：Digital signal
AS(Analog Signal)：Analogue signal
CO(Current output)：Electric current exports
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
Fig. 1 schematically shows according to embodiments of the present invention connecing for the test that flash memory body module is tested
The block diagram of mouth structure.Specifically, flash memory body module specifically may include flash memory matrix, decoding circuit and charge pump
Etc. modular circuit etc..
Test interface structure include testing weld pad pad, control signal module CS, digital signal module DS, high-pressure modular AS,
And small current signaling module CO.Wherein, under the control of the control signal that control signal module CS is exported, digital signal mould
Can be with any switching laws, to realize the function of multiplexing between block DS, high-pressure modular AS and small current signaling module CO.As
Described in Fig. 1, test interface structure also includes the NMOS tube that a grid end adds VDD.
One of digital signal module DS, high-pressure modular AS and small current signaling module CO are passed with testing weld pad pad
Signal transfer direction during delivery signal is two-way, can be from digital signal module DS, high-pressure modular AS and small current signal
One of module CO transmits signal to testing weld pad pad, or alternatively it is also possible to from testing weld pad pad to digital signal
One of module DS, high-pressure modular AS and small current signaling module CO transmit signal.
Transmitting digital signals between digital signal module DS and testing weld pad Pad；And when needing supplied with digital signal,
High-pressure modular AS and small current module CO will be high-impedance state, and control signal module CS enables with output control signal, and surveys
Test weld disk Pad connects to digital signal module DS, and digital signal is input to chip internal under control of the control signal；Work as needs
Output digit signals, high-pressure modular AS and small current module CO will be high-impedance state, and control signal module CS enables to export control
Signal processed, testing weld pad Pad connects to digital signal module DS, so that digital signal exports testing weld pad Pad.
High voltage signal is transmitted between high-pressure modular AS and testing weld pad Pad；And when needing high input voltage signal,
Control signal module CS disconnects digital signal module DS, and high-pressure modular AS enables, so that high voltage signal can be directly from test
Pad Pad is input to high-pressure modular AS, and this high voltage does not interfere with or damage digital module DS and small-signal module CO (grid
The NMOS tube of end plus vdd voltage plays the automatic effect completely cutting off high pressure)；When needing output HIGH voltage, control signal module CS is broken
Open digital signal module, high-pressure modular AS enables, internal high voltages directly can export testing weld pad from high-pressure modular AS
Pad.
Small current signal is transmitted between small current signaling module CO and testing weld pad Pad；When needing input current signal, control
Signaling module CS processed disconnects digital signal module DS, and, for high-impedance state, small current can be directly from test weldering for high-pressure modular AS
Disk Pad is input to chip internal；When needing output current signal, control signal module CS disconnects digital signal module DS, high pressure
For high-impedance state, small current directly exports testing weld pad Pad from small current module CO to modules A S.
As can be seen that control signal module CS output control signal control digital signal module DS, high-pressure modular AS and
Gating between small current module CO, high-pressure modular AS and small current module CO are to be automatically obtained isolation and gate.
In one particular embodiment of the present invention, that transmits between small current signaling module CO and testing weld pad pad is little
Current signal is analogue signal.
Additionally, in one particular embodiment of the present invention, the high electricity of transmission between high-pressure modular AS and testing weld pad pad
Pressure signal is simulation high voltage signal, and is, for example, the high voltage signal of 12V.
Because the hardware resource of test machine is limited, it is necessary to save hardware resource under the conditions of certain hardware resource,
So could constantly reduce testing expense in the case that cost is fixing.As mentioned above, because a test interface can be answered
With three kinds of functions, therefore, be equivalent to and save two hardware resources.So it is possible to realizing more concurrent testings.
In one embodiment of the invention, the present invention relates to a kind of include above-mentioned test interface structure test circuit.
And, in one embodiment of the invention, the present invention relates to a kind of method of testing as above.
Preferably, above-mentioned test interface structure, test circuit and method of testing are advantageously used for SIM (user's identification
Card) big quantity concurrent testing.
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
The technology contents that the disclosure above all can be utilized are made many possible variations and modification, or are revised as to technical solution of the present invention
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
Interior.
Claims (8)
1. a kind of for test interface structure that flash memory body module is tested it is characterised in that including：Testing weld pad,
Control signal module, digital signal module, high-pressure modular and small current signaling module, wherein defeated in control signal module institute
Under the control of the control signal going out, you can realize appointing between digital signal module, high-pressure modular and small current signaling module
Meaning switching, to realize the function of multiplexing, the wherein voltage of high-pressure modular is more than 12V, and the electricity of small current signaling module
Stream can be accurate to na；
Wherein, transmitting digital signals between digital signal module and testing weld pad；And when needing supplied with digital signal, high pressure
Module and small current signaling module will be high-impedance state, and control signal module enables with output control signal, and testing weld pad
Connect to digital signal module, digital signal is input to chip internal under control of the control signal；Believe when needing output numeral
Number, high-pressure modular and small current signaling module will be high-impedance state, and control signal module enables with output control signal, test weldering
Disk connects to digital signal module, so that digital signal exports testing weld pad.
2. the test interface structure for being tested to flash memory body module according to claim 1, its feature exists
In flash memory body module includes flash memory matrix, decoding circuit and charge pump.
3. the test interface structure for being tested to flash memory body module according to claim 1 and 2, its feature
It is, between high-pressure modular and testing weld pad, transmit high voltage signal；And when needing high input voltage signal, control signal
Module disconnects digital signal module, and high-pressure modular enables, so that high voltage signal directly can be input to high pressure from testing weld pad
Module, this high voltage does not interfere with or damages digital signal module and small-signal module；When needing output HIGH voltage, control
Signaling module disconnects digital signal module, and high-pressure modular enables, and internal high voltages directly can export test from high-pressure modular
Pad.
4. the test interface structure for being tested to flash memory body module according to claim 1 and 2, its feature
It is, between small current signaling module and testing weld pad, transmit small current signal；When needing input current signal, control signal mould
Block disconnects digital signal module, and high-pressure modular is in high-impedance state, and small current can directly be input in chip from testing weld pad
Portion；When needing output current signal, control signal module disconnects digital signal module, high-pressure modular for high-impedance state, little electricity
Stream directly exports testing weld pad from small current signaling module.
5. a kind of test circuit it is characterised in that include according to one of Claims 1-4 for flash memory mould
The test interface structure that block is tested.
6. a kind of method of testing flash memory body module tested using test interface structure, described test interface structure
Including testing weld pad, control signal module, digital signal module, high-pressure modular and small current signaling module it is characterised in that
Described method of testing includes：Under the control of the control signal that control signal module is exported, realize digital signal module, high pressure
Module and the multiplexing of small current signaling module；
Wherein, transmitting digital signals between digital signal module and testing weld pad；And when needing supplied with digital signal, high pressure
Module and small current signaling module will be high-impedance state, and control signal module enables with output control signal, and testing weld pad
Connect to digital signal module, digital signal is input to chip internal under control of the control signal；Believe when needing output numeral
Number, high-pressure modular and small current signaling module will be high-impedance state, and control signal module enables with output control signal, test weldering
Disk connects to digital signal module, so that digital signal exports testing weld pad.
7. method of testing flash memory body module tested using test interface structure according to claim 6,
It is characterized in that, transmit high voltage signal between high-pressure modular and testing weld pad；And when needing high input voltage signal, control
Signaling module processed disconnects digital signal module, and high-pressure modular enables, so that high voltage signal can directly input from testing weld pad
To high-pressure modular, this high voltage does not interfere with or damages digital signal module and small-signal module；When needing, output height is electric
Pressure, control signal module disconnects digital signal module, and high-pressure modular enables, and internal high voltages can directly export from high-pressure modular
To testing weld pad.
8. method of testing flash memory body module tested using test interface structure according to claim 6,
It is characterized in that, transmit small current signal between small current signaling module and testing weld pad；When needing input current signal, control
Signaling module disconnects digital signal module, and high-pressure modular is in high-impedance state, and small current can directly be input to from testing weld pad
Chip internal；When needing output current signal, control signal module disconnects digital signal module, and high-pressure modular is for high resistant shape
State, small current directly exports testing weld pad from small current signaling module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110187397.6A CN102354536B (en) | 2011-07-05 | 2011-07-05 | Test interface structure, test circuit and test method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110187397.6A CN102354536B (en) | 2011-07-05 | 2011-07-05 | Test interface structure, test circuit and test method |
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| Publication Number | Publication Date |
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| CN102354536A CN102354536A (en) | 2012-02-15 |
| CN102354536B true CN102354536B (en) | 2017-02-08 |
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| CN201110187397.6A Active CN102354536B (en) | 2011-07-05 | 2011-07-05 | Test interface structure, test circuit and test method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111294036A (en) * | 2019-07-17 | 2020-06-16 | 锐迪科创微电子（北京）有限公司 | Pad multiplexing device and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1434973A (en) * | 2000-06-09 | 2003-08-06 | 三因迪斯克公司 | EEPROM memory chip with multiple use pinouts |
| CN1988046A (en) * | 2005-12-22 | 2007-06-27 | 松下电器产业株式会社 | Semiconductor leakage current detector and leakage current measurement method, and semiconductor intergrated circuit thereof |
-
2011
- 2011-07-05 CN CN201110187397.6A patent/CN102354536B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1434973A (en) * | 2000-06-09 | 2003-08-06 | 三因迪斯克公司 | EEPROM memory chip with multiple use pinouts |
| CN1988046A (en) * | 2005-12-22 | 2007-06-27 | 松下电器产业株式会社 | Semiconductor leakage current detector and leakage current measurement method, and semiconductor intergrated circuit thereof |
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| CN102354536A (en) | 2012-02-15 |
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| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140428 |
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Effective date of registration: 20140428 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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