CN102354240A - Circuit structure capable of expanding high-frequency bandwidth - Google Patents

Circuit structure capable of expanding high-frequency bandwidth Download PDF

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Publication number
CN102354240A
CN102354240A CN2011102079461A CN201110207946A CN102354240A CN 102354240 A CN102354240 A CN 102354240A CN 2011102079461 A CN2011102079461 A CN 2011102079461A CN 201110207946 A CN201110207946 A CN 201110207946A CN 102354240 A CN102354240 A CN 102354240A
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China
Prior art keywords
current source
tail current
switch
circuit structure
input pipe
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Pending
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CN2011102079461A
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Chinese (zh)
Inventor
任俊彦
张楷晨
吴勤
李巍
李宁
许俊
叶凡
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Fudan University
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Fudan University
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Priority to CN2011102079461A priority Critical patent/CN102354240A/en
Publication of CN102354240A publication Critical patent/CN102354240A/en
Pending legal-status Critical Current

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Abstract

The invention belongs to the technical field of a radio frequency integrated circuit, and particularly relates to a circuit structure capable of expanding a high-frequency bandwidth. A circuit comprises a common grid input pipe, a load and a voltage-controlled tail current source array, wherein each tail current source of the voltage-controlled tail current source array comprises a switch and a current source which are connected in turn; one end of the switch is connected to a source electrode of the common grid input pipe; the other end of the current source is grounded; and a grid electrode of the common grid input pipe is connected to a voltage bias, a drain electrode of the common grid input pipe is connected to the load while the source electrode of the common grid input pipe is connected to an input signal and the switch of the tail current source array. The circuit structure effectively restrains an input parasitic capacitance by using the switch to control the tail current source array and has a function of expanding the high-frequency bandwidth. The circuit structure has a simple structure and a small area and is capable of realizing higher bandwidth.

Description

A kind of circuit structure of expanding high frequency bandwidth
Technical field
The present invention is a technical field of radio frequency integrated circuits, is specifically related to a kind of circuit structure of expanding high frequency bandwidth.
Background technology
The multimode radio-frequency receiver system is the research focus of current academia and industry member.Through the compatibility of single receiver link realization plurality of communication schemes, can reduce the power consumption and the area of chip of complete machine simultaneously.In the receiver front end circuit, like low noise amplifier and the frequency mixer based on the common gate input structure, how as far as possible wide band radio-frequency circuit of design under the prerequisite of not sacrificing area is most important for multi-mode receiver.
Summary of the invention
The object of the invention provides a kind of circuit structure of the high frequency bandwidth expanded of simple in structure, applying flexible.
The circuit structure of expanding high frequency bandwidth provided by the invention, as shown in fig. 1, by common gate input pipe M1, load and Control of Voltage tail current source array are formed; Each row tail current source of said Control of Voltage tail current source array connects to form by switch and current source in turn; One termination common gate input pipe M1 source electrode of switch, current source other end ground connection; Multiple row (multistage) tail current source composes in parallel above-mentioned Control of Voltage tail current source array.The grid of common gate input pipe M1 connects voltage bias, and drain electrode connects load, and source electrode connects input signal and tail current source array.The present invention realizes the expansion of high frequency treatment bandwidth through the size of switch control tail current source array output current.
Among the present invention, said common gate input pipe M1 can adopt the NMOS pipe.
Among the present invention, said switch can use the physical switch circuit to realize, perhaps opening and turn-offing and realize by Control of Voltage tail current source gate bias voltage and then control tail current source.
Further; The circuit structure of the above-mentioned high frequency bandwidth expanded; Can insert quantity through the different tail current source of gating; Realize the size variation of input current; And then changing the mutual conductance of grid input pipe M1 altogether (increase the tail current value and can increase mutual conductance), the increase of mutual conductance can reduce the influence of the stray capacitance of M1 source electrode to high frequency bandwidth.
The principle of the above-mentioned circuit structure of expanding high frequency bandwidth is following: like Fig. 2, shown in 3, be the amplifier circuit and the small-signal analysis of common gate input, formula (1) is seen in concrete analysis; Shutoff through switch, open various combination, realize the restructural of the tuning-points of said laod network;
Figure 22381DEST_PATH_IMAGE002
(1)
Thus it is clear that, increase mutual conductance g mCan be so that C GsS/g mEquivalence diminishes, and increases electric current through the control tail current source during at high frequency at circuit working, can increase mutual conductance g accordingly m, therefore can play the effect of expanding bandwidth at high frequency treatment.And when low frequency, can reduce tail current, play the effect of low-power consumption.
Improvement of the present invention is mainly reflected in:
1, a kind of circuit structure of novel expansion high frequency bandwidth is proposed, different to the frequency range of circuit working, can expand the bandwidth of high frequency treatment through changing the input current size that control voltage changes the tail current source array;
2, tail current source is controlled dynamically, when being operated in low frequency, reduced the electric current of tail current source, play the effect that reduces power consumption; When being operated in high frequency, increase electric current, under the prerequisite of not sacrificing area, expand the bandwidth of operation of circuit.Can realize the compromise of good performance and power consumption.
The present invention to the adjustment based on common gate configuration amplifier and mutual conductance input current, realizes the expansion of high frequency bandwidth through the tail current source array, and realizes the mobile equilibrium of bandwidth and power consumption.This circuit structure is simple, and applying flexible can effectively reduce the influence of input end stray capacitance, and reaches the purpose of expanding bandwidth.Be specially adapted in the low noise amplifier and frequency mixer of multimode rake receiver front end based on the common gate input structure.
Description of drawings
Fig. 1: the circuit structure design example block diagram of a kind of novel expansion high frequency bandwidth of the present invention.
Fig. 2: the common gate input amplifier circuit figure that circuit structure was directed against of a kind of novel expansion high frequency bandwidth of the present invention.
Fig. 3: the small-signal model of the common grid amplifier that circuit structure was directed against of a kind of novel expansion high frequency bandwidth of the present invention.
Embodiment
Combine accompanying drawing to further describe the present invention through specific embodiment below.
As shown in Figure 1; Import for a common gate; Use amplifier with field of radio frequency integrated circuits; At its input end; The source electrode that is common gate input NMOS pipe M1 inserts Control of Voltage tail current source array, and through the selection to switching voltage, the circuit structure of said a kind of novel expansion high frequency bandwidth can change the input current of this tail current source array to the M1 pipe; To be implemented in the height expansion bandwidth that occurs frequently, practice thrift the effect of power consumption at the low frequency place.
What should illustrate at last is; Below only unrestricted in order to technical scheme of the present invention to be described; Those of ordinary skill in the art is to be understood that; Can make amendment or be equal to replacement technical scheme of the present invention; And not breaking away from the spirit and scope of technical scheme of the present invention, it all should be encompassed in the claim scope of the present invention.

Claims (2)

1. can expand the high frequency bandwidth circuit structure for one kind, it is characterized in that: form by common gate input pipe, load and Control of Voltage tail current source array; Each row tail current source of said Control of Voltage tail current source array connects to form by switch and current source in turn; One termination common gate input pipe source electrode of switch, current source other end ground connection; The grid of common gate input pipe connects voltage bias, and drain electrode connects load, and source electrode connects the switch of input signal and tail current source array.
2. a kind of expansion high frequency bandwidth circuit structure as claimed in claim 1 is characterized in that, said switch uses the physical switch circuit to realize, perhaps opening and turn-offing and realize by digital control tail current source gate bias voltage and then control tail current source.
CN2011102079461A 2011-07-25 2011-07-25 Circuit structure capable of expanding high-frequency bandwidth Pending CN102354240A (en)

Priority Applications (1)

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CN2011102079461A CN102354240A (en) 2011-07-25 2011-07-25 Circuit structure capable of expanding high-frequency bandwidth

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Application Number Priority Date Filing Date Title
CN2011102079461A CN102354240A (en) 2011-07-25 2011-07-25 Circuit structure capable of expanding high-frequency bandwidth

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CN102354240A true CN102354240A (en) 2012-02-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107957744A (en) * 2016-10-14 2018-04-24 瑞萨电子株式会社 Semiconductor devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020118065A1 (en) * 2001-02-28 2002-08-29 Masayuki Miyamoto Variable gain amplifier
EP1560331A1 (en) * 2003-01-14 2005-08-03 Matsushita Electric Industrial Co., Ltd. Variable gain amplifier circuit and radio machine
JP2009171251A (en) * 2008-01-16 2009-07-30 Sharp Corp Variable gain amplifier
CN101826843A (en) * 2010-05-06 2010-09-08 复旦大学 Variable gain amplifier for linearity optimization at low gain

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020118065A1 (en) * 2001-02-28 2002-08-29 Masayuki Miyamoto Variable gain amplifier
EP1560331A1 (en) * 2003-01-14 2005-08-03 Matsushita Electric Industrial Co., Ltd. Variable gain amplifier circuit and radio machine
JP2009171251A (en) * 2008-01-16 2009-07-30 Sharp Corp Variable gain amplifier
CN101826843A (en) * 2010-05-06 2010-09-08 复旦大学 Variable gain amplifier for linearity optimization at low gain

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107957744A (en) * 2016-10-14 2018-04-24 瑞萨电子株式会社 Semiconductor devices

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Application publication date: 20120215