CN102347733A - Reflection gain type high-power amplifier - Google Patents
Reflection gain type high-power amplifier Download PDFInfo
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- CN102347733A CN102347733A CN2011101523737A CN201110152373A CN102347733A CN 102347733 A CN102347733 A CN 102347733A CN 2011101523737 A CN2011101523737 A CN 2011101523737A CN 201110152373 A CN201110152373 A CN 201110152373A CN 102347733 A CN102347733 A CN 102347733A
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- power amplifier
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Abstract
The invention discloses a reflection gain type high-power amplifier, relating to the field of optical communication and high-power optical signal amplification. The amplifier comprises a quartz tube (1), a gain coating layer (2) on the inner wall of the tube and a pumping source (3). The gain coating layer (2) on the inner wall of the tube is made from rare earth ions. Generated laser signals are totally reflected by the gain coating layer (2) on the inner wall of the tube and the gain coating layer (2) on the inner wall of the tube is 10-100 nm thick. The quartz tube (1) is directly irradiated from the side face by the pump source (3). The section of the quartz tube (1) is in a shape of which inner and outer walls are all round and rectangular or the inner wall is star-shaped and the outer wall is round. According to invention, the problem of concentration quenching caused by high dosage concentration of a high-power amplifier doped with rare earth ions is solved.
Description
Technical field
The present invention relates to a kind of amplifier.Be applied to the field of optical communication and the high-power amplification of light signal especially.
Background technology
The generation of amplifier and development have been made outstanding contribution to the raising of national life, at present the imagination originally that surpasses wide far away of its application.Existing nowadays because the importance of amplifier obtains people's attention day by day, so input, man power and material grow with each passing day in the research and development of amplifier.The special construction of amplifier can make output laser in directivity, and high-energy-density property aspect obtains fine.The Amplifier Gain mode is most at present propagates in spending more money on medium for laser, through each laser exciting of excited state particle in the gain media is produced double laser gain.Adopt this mode under the less situation of laser power, can produce good output effect, but when the power of amplifier increases, the quantity of gain particle can not satisfy the continuation of laser and amplify.At this moment solution is the bulk density that increases the gain particle, and can the pressurizeing of gas, can the adopting of solid promote doping content and realize.Backward scattered intensity is increased, and this will exert an influence to the gain of laser; And the practice that increases the gain media doping content in the solid is difficult to guarantee along with its uniformity of lifting of concentration; In rare-earth ion-doped fiber amplifier; The concentration overdoping of rare earth ion is too high will to produce concentration quenching, and a large amount of ions assemble bulk, are difficult to realize the high-power output of laser.The upper limit of the booster output that brings thus is difficult to have a distinct increment.
Summary of the invention
Technical problem to be solved by this invention is:
The too high concentration quenching problem of bringing of doping content in the high-power rare-earth ion-doped amplifier.
Technical scheme of the present invention:
Reflection gain formula high power amplifier, this amplifier comprise quartz ampoule, inside pipe wall gain coating and pumping source.
The material of described inside pipe wall gain coating is a rare earth ion, the thickness 10nm～100nm of inside pipe wall gain coating.
The cross sectional shape of quartz ampoule be inside and outside wall to be circle, rectangle or inwall be star, outer wall is circular.
The laser signal total reflection of described inside pipe wall gain coating to producing.
Described rare earth ion comprises ytterbium ion, erbium ion, ruthenium ion or neodymium ion.
Described pumping source is the direct irradiation quartz ampoule from the side.
The present invention compares the beneficial effect that is had with prior art:
The key structure of this amplifier is coated with rare earth gain ion on transparent quartz ampoule inwall, the gain ion concentration is compared other amplifier and wanted high, and the concentration quenching problem can not occur.Inside pipe wall gain coating is opaque to the output flashlight, and laser reaches the purpose of gain in the process of cavity wall reflection.Thereby compare other amplifier the higher power output upper limit is arranged, the energy density of output laser signal also further improves.
Description of drawings
Fig. 1 is to be circular reflection gain formula high power amplifier for quartz ampoule cross section inside and outside wall.
Fig. 2 is circular quartz ampoule sectional view for inside and outside wall.
Fig. 3 is the reflection gain formula high power amplifier that is rectangle for quartz ampoule cross section inside and outside wall.
Fig. 4 is the quartz ampoule sectional view of rectangle for inside and outside wall.
Fig. 5 is a star for inwall, and outer wall is circular reflection gain formula high power amplifier.
Fig. 6 is a star for inwall, and outer wall is circular quartz ampoule sectional view.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
Execution mode one
Reflection gain formula high power amplifier, this amplifier comprise quartz ampoule 1, inside pipe wall gain coating 2 and pumping source 3.
The material of described inside pipe wall gain coating 2 is a ytterbium ion, the thickness 10nm of inside pipe wall gain coating 2.
The cross sectional shape of quartz ampoule 1 is that inside and outside wall is circle, like Fig. 1, shown in 2.
The laser signal total reflection of 2 pairs of generations of described inside pipe wall gain coating.
Described pumping source 3 is direct irradiation quartz ampoule 1 from the side, and described direct irradiation is meant that the pump light that pumping source 3 produces gets into quartz ampoule 1, is not to get into through optical fiber.
Execution mode two
The difference of execution mode two and execution mode one:
The inside and outside wall of the cross sectional shape of quartz ampoule 1 is rectangle, like Fig. 3, shown in 4.
The material of described inside pipe wall gain coating 2 is an erbium ion, the thickness 30nm of inside pipe wall gain coating 2.
Execution mode three
The difference of execution mode three and execution mode one:
The inwall of the cross sectional shape of quartz ampoule 1 is a star, and outer wall is circular, like Fig. 5, shown in 6.
The material of described inside pipe wall gain coating 2 is a neodymium ion, the thickness 60nm of inside pipe wall gain coating 2.
Execution mode four
The difference of execution mode four and execution mode one:
Like Fig. 1, shown in 2, the material of described inside pipe wall gain coating 2 is a ruthenium ion, the thickness 100nm of inside pipe wall gain coating 2.
Claims (5)
1. reflection gain formula high power amplifier is characterized in that:
This amplifier comprises quartz ampoule (1), inside pipe wall gain coating (2) and pumping source (3);
The material of described inside pipe wall gain coating (2) is a rare earth ion;
Described pumping source (3) is direct irradiation quartz ampoule (1) from the side.
2. reflection gain formula high power amplifier according to claim 1 is characterized in that:
The cross sectional shape of quartz ampoule (1) be inside and outside wall to be circle, rectangle or inwall be star, outer wall is circular.
3. reflection gain formula high power amplifier according to claim 1 is characterized in that:
The laser signal total reflection of described inside pipe wall gain coating (2) to producing.
4. reflection gain formula high power amplifier according to claim 1 is characterized in that:
Described rare earth ion comprises ytterbium ion, erbium ion, ruthenium ion or neodymium ion.
5. reflection gain formula high power amplifier according to claim 1 is characterized in that:
Thickness 10nm～the 100nm of described inside pipe wall gain coating (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101523737A CN102347733A (en) | 2011-06-08 | 2011-06-08 | Reflection gain type high-power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101523737A CN102347733A (en) | 2011-06-08 | 2011-06-08 | Reflection gain type high-power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN102347733A true CN102347733A (en) | 2012-02-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2011101523737A Pending CN102347733A (en) | 2011-06-08 | 2011-06-08 | Reflection gain type high-power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10574021B2 (en) | 2016-05-13 | 2020-02-25 | Corning Incorporated | Optical tube waveguide lasing medium and related method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441296A (en) * | 2008-12-25 | 2009-05-27 | 哈尔滨工程大学 | Wave guide layer-doped type capillary optical fiber and preparing method thereof |
| CN101459311A (en) * | 2008-12-30 | 2009-06-17 | 吉林大学 | Polymer organic optical waveguide amplifier material containing erbium/ytterbium rare earth ion |
-
2011
- 2011-06-08 CN CN2011101523737A patent/CN102347733A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441296A (en) * | 2008-12-25 | 2009-05-27 | 哈尔滨工程大学 | Wave guide layer-doped type capillary optical fiber and preparing method thereof |
| CN101459311A (en) * | 2008-12-30 | 2009-06-17 | 吉林大学 | Polymer organic optical waveguide amplifier material containing erbium/ytterbium rare earth ion |
Non-Patent Citations (2)
| Title |
|---|
| 仇晓明: "新型稀土激光材料的研究", 《复旦大学 博士学位论文》, 31 January 2009 (2009-01-31) * |
| 常军: "稀土掺杂光纤放大器中光放大研究", 《山东大学 博士学位论文》, 30 November 2006 (2006-11-30) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10574021B2 (en) | 2016-05-13 | 2020-02-25 | Corning Incorporated | Optical tube waveguide lasing medium and related method |
| US11114812B2 (en) | 2016-05-13 | 2021-09-07 | Corning Incorporated | Optical tube waveguide lasing medium and related method |
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Application publication date: 20120208 |