CN102347322A - Light-emitting element, backlight module device and illuminating device - Google Patents
Light-emitting element, backlight module device and illuminating device Download PDFInfo
- Publication number
- CN102347322A CN102347322A CN2010102438262A CN201010243826A CN102347322A CN 102347322 A CN102347322 A CN 102347322A CN 2010102438262 A CN2010102438262 A CN 2010102438262A CN 201010243826 A CN201010243826 A CN 201010243826A CN 102347322 A CN102347322 A CN 102347322A
- Authority
- CN
- China
- Prior art keywords
- light
- luminescence unit
- emitting component
- heated
- brightness decay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a light-emitting element, a backlight module device and an illuminating device. The light-emitting element comprises a carrier and a light-emitting cell array formed on the carrier, and the light-emitting cell array comprises multiple first light-emitting units and multiple second light-emitting units, wherein each first light-emitting unit consists of first III-V semiconductor materials and has a first heating brightness decay coefficient; each second light-emitting unit consists of second III-V semiconductor materials and has a second heating brightness decay coefficient; the light-emitting wavelength of each first light-emitting unit is different from that of each second light-emitting unit, and the absolute value of the first heating brightness decay coefficient of each first light-emitting unit is larger than that of the second heating brightness decay coefficient of each second light-emitting unit.
Description
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of light-emitting component that comprises array of light emitting cells.
Background technology
In recent years, because the progress of extension and technology makes light-emitting diode (light emitting diode is called for short LED) become one of solid-state illumination light source that has potentiality.Restriction based on Physical Mechanism; LED only can be with dc powered; Therefore any with in the illumination Design of LED as light source, all need arrange in pairs or groups with electronic components such as rectification and step-downs, convert the spendable DC power supply of LED into the alternating current that Utilities Electric Co. is directly provided.Yet increase electronic components such as rectification and step-down, except that the increase that causes illumination cost, the low AC/DC conversion efficiency of electronic components such as rectification and step-down, volume bigger than normal etc. all can influence LED and be used in reliability and the useful life of normal lighting when using.
Alternating-current light emitting diode (ACLED) but element need not add electronic components such as rectification and step-down just direct control in AC power, the following potential major product that becomes the fixed point solid-state illumination.The operation wattage that ACLED is suitable for, chip size, for the practicality and the popularization in this element future very important influence is arranged then with factors such as efficient and yield liftings.
Summary of the invention
The present invention proposes a kind of light-emitting component, comprise carrier and be positioned at the array of light emitting cells on this carrier.This array of light emitting cells comprises: a plurality of first luminescence units, and wherein arbitrary these a plurality of first luminescence units are made up of first kind of III-V family semiconductor structure, and this first luminescence unit has the first brightness decay coefficient that is heated; And a plurality of second luminescence units, wherein arbitrary these a plurality of second luminescence units are made up of second kind of III-V family semiconductor structure, and this second luminescence unit has the second brightness decay coefficient that is heated; Wherein this first be heated the brightness decay coefficient absolute value greater than with this second absolute value that is heated the brightness decay coefficient.
The present invention proposes a kind of light-emitting component; Comprise: carrier and be formed at the array of light emitting cells on the carrier; Wherein array of light emitting cells comprises: a plurality of first luminescence units; Wherein first luminescence unit is made up of first kind of III-V family semi-conducting material; And first luminescence unit have first be heated the brightness decay coefficient (Hot/Cold Factor, (H/C)
1), it is worth less than 0; And a plurality of second luminescence units, wherein second luminescence unit is made up of second kind of III-V family semi-conducting material, and second luminescence unit have second be heated the brightness decay coefficient (Hot/Cold Factor, (H/C)
2), it is worth less than 0.
The present invention proposes a kind of light-emitting component, wherein first of first luminescence unit brightness decay coefficient (H/C) that is heated
1Its value between-085%/K between-the 0.95%/K, second of second luminescence unit brightness decay coefficient (H/C) that is heated
2Its value between-015%/K between-the 0.25%/K.
The present invention proposes a kind of light-emitting component, and wherein the first luminescence unit emission wavelength is greater than the second luminescence unit emission wavelength.
The present invention proposes a kind of light-emitting component, wherein first of first luminescence unit brightness decay coefficient (H/C) that is heated
1Absolute value greater than second of second luminescence unit brightness decay coefficient (H/C) that is heated
2Absolute value, and the absolute value of the two difference value is preferably less than 0.8%/K.
The present invention proposes a kind of light-emitting component, wherein first of first luminescence unit brightness decay coefficient (H/C) that is heated
1Absolute value greater than second of second luminescence unit brightness decay coefficient (H/C) that is heated
2Absolute value, and the absolute value of the two difference value is more preferably less than 0.55%/K.
The present invention proposes a kind of light-emitting component, electrically connects to form with wherein a kind of mode that series, parallel, connection in series-parallel connect, reverse connection in series-parallel and bridge circuit connect between wherein a plurality of first luminescence units.
The present invention proposes a kind of light-emitting component, electrically connects to form with wherein a kind of mode that series, parallel, connection in series-parallel connect, reverse connection in series-parallel and bridge circuit connect between wherein a plurality of second luminescence units.
The present invention proposes a kind of light-emitting component, between wherein a plurality of first luminescence units and a plurality of second luminescence units with series, parallel, connection in series-parallel connect, reverse connection in series-parallel and bridge circuit are connected wherein a kind of mode to form electric connection.
The present invention proposes a kind of light-emitting component; Wherein first of first luminescence unit kind of III-V family semi-conducting material is made up of the AlGaInP series compound, and second kind of III-V family semi-conducting material of second luminescence unit is made up of the aluminum indium gallium nitride series compound.
The present invention proposes a kind of light-emitting component, wherein first of first luminescence unit brightness decay coefficient (H/C) that is heated
1Absolute value greater than second of second luminescence unit brightness decay coefficient (H/C) that is heated
2Absolute value.
The present invention proposes a kind of light-emitting component, and wherein the first luminescence unit emission wavelength scope is 600-750nm, and the second luminescence unit emission wavelength scope is 460-530nm.
Description of drawings
Fig. 1 is the sketch map of disclosed light emitting element structure 100.
Fig. 2 is the luminescence unit body temperature and the luminous flux graph of a relation of the luminescence unit be made up of different materials.
Fig. 3 describes the backlight modular structure 200 of the embodiment of the invention.
Fig. 4 describes the illuminator structure 300 of the embodiment of the invention.
Description of reference numerals
10: the first luminescence units
20: the second luminescence units
11,21: the growth substrate
12,22: first conductive-type semiconductor layer
13,23: active layer
14,24: second conductive-type semiconductor layer
15,25: first electrode
16,26: second electrode
31: carrier
33: insulation system
34: electric connection structure
100: light-emitting component
200: back light module device
210,310: light supply apparatus
220: Optical devices
230,320: power system
300: lighting device
330: control element
Embodiment
As shown in Figure 1, be the sketch map of disclosed light-emitting component 100, wherein light-emitting component 100 comprises carrier 31 and is formed at the array of light emitting cells on the carrier 31; Wherein array of light emitting cells is representative by one first luminescence unit and one second luminescence unit series connection.This array of light emitting cells comprises: a plurality of first luminescence units 10; Wherein first luminescence unit 10 by first kind of III-V family semi-conducting material for example the AlGaInP series compound form; And first luminescence unit 10 have first be heated the brightness decay coefficient (Hot/Cold Factor, (H/C)
1); And a plurality of second luminescence units 20, wherein second luminescence unit 20 by second kind of III-V family semi-conducting material for example the aluminum indium gallium nitride series compound form, and second luminescence unit 20 have second be heated the brightness decay coefficient (Hot/Cold Factor, (H/C)
2).
Luminescence unit is heated brightness decay coefficient (Hot/Cold Factor, (H/C)) definition as follows:
If luminescence unit is in temperature T
1The time luminous flux be f
1Lumen is in temperature T
2The time luminous flux be f
2Lumen; With T
1The time luminous flux standardization (normalized) be 1, T then
2The time luminous flux standardization (normalized) be (f
2/ f
1); Then this luminescence unit brightness decay coefficient (Hot/Cold Factor, (H/C)) that is heated can formula be represented, and its value is less than 0:
H/C=((T
2The time standardization luminous flux)-(T
1The time standardization luminous flux))/(T
2-T
1)
＝((f
2/f
1)-1)/(T
2-T
1)
In the present embodiment, first luminescence unit, 10 its structures comprise growth substrate 11 at least, form first conductive-type semiconductor layer 12, active layer 13 and second conductive-type semiconductor layer 14 in regular turn on growth substrate 11.The material of substrate 11 of wherein growing up comprises that at least one material is selected from the material group that GaAs, sapphire, carborundum, gallium nitride and aluminium nitride are formed, and active layer 13 can be heterostructure, comprises single heterojunction structure or double-heterostructure.First electrode 15 is formed on growth substrate 11 subregions, and electrically connects with first conductive-type semiconductor layer 12; Second electrode 16 is formed on second conductive-type semiconductor layer, 14 subregions, and electrically connects with second conductive-type semiconductor layer 14.And formed insulation system 33 by second electrode, 16 overlay areas by first electrode, 15 overlay areas and second conductive-type semiconductor layer 14 in first luminescence unit, 10 sidewalls, growth substrate 11.Can series, parallel between a plurality of first luminescence units, connection in series-parallel connects, reverse connection in series-parallel and bridge circuit connect wherein a kind of mode electrically connects to form.
Second luminescence unit, 20 its structures comprise growth substrate 21 at least, form first conductive-type semiconductor layer 22, active layer 23 and second conductive-type semiconductor layer 24 in regular turn on growth substrate 21.The material of substrate 21 of wherein growing up comprises that at least one material is selected from the material group that GaAs, sapphire, carborundum, gallium nitride and aluminium nitride are formed, and active layer 23 can be quantum well structure, comprises single quantum or multiple quantum trap structure; Its preferred structure is the multiple quantum trap structure that comprises more than 10 layers, and this quantum well structure thickness is greater than 100 dusts.First electrode 25 is formed on growth substrate 21 subregions, and electrically connects with first conductive-type semiconductor layer 22; Second electrode 26 is formed on second conductive-type semiconductor layer, 24 subregions, and electrically connects with second conductive-type semiconductor layer 24.And formed insulation system 33 by second electrode, 26 overlay areas by first electrode, 25 overlay areas and second conductive-type semiconductor layer 44 in second luminescence unit, 20 sidewalls, growth substrate 21.Can series, parallel between a plurality of second luminescence units, connection in series-parallel connects, reverse connection in series-parallel and bridge circuit connect wherein a kind of mode electrically connects to form.And electrically connecting to form through wherein a kind of mode that electric connection structure 34 can series, parallel, connection in series-parallel connects, reverse connection in series-parallel and bridge circuit are connected between first luminescence unit and second luminescence unit, and then formation array of light emitting cells.In addition, first luminescence unit 10 in the array of light emitting cells and second luminescence unit 20 also can remove its growth substrate 11,21 respectively, engage with carrier 31 to form light-emitting component through knitting layer again.Wherein the material of carrier 31 comprises silicon, silicide, carbide, metal, metal alloy, metal oxide, metallic composite, diamond, diamond-like-carbon materials such as (diamond-like carbon); Knitting layer can be the high-molecular organic material knitting layer, for example benzocyclobutene (BCB), mistake fluorine cyclobutane (PFBC), epoxy resin (Epoxy), silica gel (Silicone); Or metal or metal alloy material knitting layer, for example AuSn, PbSn, AuGe, AuBe, AuSi, Sn, In, Au, PdIn.
In light-emitting component 100, first luminescence unit, 10 emission wavelengths are greater than second luminescence unit, 20 emission wavelengths; The first luminescence unit emission wavelength scope is 600-750nm, and the second luminescence unit emission wavelength scope is 460-530nm.First of first luminescence unit brightness decay coefficient (H/C) that is heated
1Absolute value greater than second of second luminescence unit brightness decay coefficient (H/C) that is heated
2Absolute value, and the absolute value of the two difference value is preferably less than 0.8%/K, more preferably less than 0.55%/K.
Fig. 2 is luminescence unit body temperature and luminous flux graph of a relation; Luminescence unit is example with the light-emitting diode; Wherein curve (a) is represented in the red light-emitting diode (625nm) of GaAs substrate growth AlGaInP series compound; Curve (b) is represented in the green light LED (525nm) of GaN substrate growth GaInN series compound, and curve (c) is represented in the blue light-emitting diode (470nm) of GaN substrate growth GaInN series compound.Can be known by Fig. 2: the slope of curve (a) is maximum, and promptly the absolute value of its brightness decay coefficient (H/C) that is heated of AlGaInP series compound is bigger; The slope of curve (b), (c) is less, and promptly the absolute value of its brightness decay coefficient (H/C) that is heated of GaInN series compound is less.If light-emitting component comprises the luminescence unit that the luminescence unit be made up of the AlGaInP material and GaInN material are formed; Because of the photoelectric characteristic of the two is different to the interdependency of temperature, thus from begin to operate all material system all reach stable state during just have a luminance fluctuation bad phenomenon take place.The absolute value of absolute value its brightness decay coefficient (H/C) that is heated than the luminescence unit that comprises quantum well structure that is shown its brightness decay coefficient (H/C) that is heated of luminescence unit that comprises heterostructure by other experimental result is little; Therefore present embodiment design light-emitting component comprises at least by a plurality of luminescence units with heterostructure and forms, with the probability of reduction luminance fluctuation.
In addition, can electrically connect between each luminescence unit (electrically connecting in series) become single-chip with a plurality of luminescence units (Multiple-dies Chip, MC); Cooperating voltage is with single single chip architecture or making up a plurality of single chip architectures can be applicable on DC power supply or the AC power after over commutation.Also can in single single-chip, electrically connect a plurality of luminescence units is the electrical layout that comprises bridge circuit, to be applied on the AC power.
With reference to Fig. 3, it shows the backlight modular structure of the embodiment of the invention.Wherein back light module device 200 comprises the light supply apparatus 210 that the light-emitting component 100 by the foregoing description is constituted; Optical devices 220 place going out on the light path of light supply apparatus 210, and light is done suitable processing back bright dipping; And power system 230, provide above-mentioned light supply apparatus 210 required power supply.
With reference to Fig. 4, it shows the illuminator structure of the embodiment of the invention.Above-mentioned lighting device 300 can be car light, street lamp, flashlight, street lamp, indicator light etc.Wherein lighting device 300 comprises: light supply apparatus 310 is made up of 100 of the light-emitting components of the above embodiments of the present invention; Power system 320 provides light supply apparatus 310 required power supply; And control element 330, control power supply input light supply apparatus 310.
The cited embodiment of the present invention in order to explanation the present invention, is not in order to limit scope of the present invention only.Anyone was to the present invention did any showing and be prone to the modification of knowing or change neither disengaging spirit of the present invention and scope.
Claims (14)
1. light-emitting component comprises:
Carrier; And
Array of light emitting cells is positioned on this carrier, comprises:
A plurality of first luminescence units, wherein arbitrary these a plurality of first luminescence units are made up of first kind of III-V family semiconductor structure, and this first luminescence unit has the first brightness decay coefficient that is heated; And
A plurality of second luminescence units, wherein arbitrary these a plurality of second luminescence units are made up of second kind of III-V family semiconductor structure, and this second luminescence unit has the second brightness decay coefficient that is heated;
Wherein this first be heated the brightness decay coefficient absolute value greater than with this second absolute value that is heated the brightness decay coefficient.
2. light-emitting component as claimed in claim 1, wherein this first brightness decay coefficient and this second that be heated is heated the absolute value of the two difference value of brightness decay coefficient less than 0.8%/K.
3. light-emitting component as claimed in claim 2, wherein this first brightness decay coefficient and this second that be heated is heated the absolute value of the two difference value of brightness decay coefficient less than 0.55%/K.
4. light-emitting component as claimed in claim 1, but wherein this light-emitting component direct control in AC power.
5. light-emitting component as claimed in claim 1, wherein this luminescence unit brightness decay coefficient that is heated meets formula:
H/C=((T
2The time standardization luminous flux)-(T
1The time standardization luminous flux))/(T
2-T
1)
＝((f
2/f
1)-1)/(T
2-T
1)
Wherein work as luminescence unit in temperature T
1The time luminous flux be f
1Lumen is in temperature T
2The time luminous flux be f
2Lumen; With T
1The time luminous flux be standardized as 1, T then
2The time luminous flux be standardized as (f
2/ f
1).
6. light-emitting component as claimed in claim 1 wherein can series, parallel between these a plurality of first luminescence units and/or between these a plurality of second luminescence units, connection in series-parallel connects, reverse connection in series-parallel and bridge circuit connect wherein a kind of mode electrically connects to form; Wherein a kind of mode that being electrically connected between these a plurality of first luminescence units and these a plurality of second luminescence units can series, parallel, connection in series-parallel connects, reverse connection in series-parallel and bridge circuit are connected is to form electric connection.
7. light-emitting component as claimed in claim 1; Wherein first kind of III-V family semiconductor structure of this of this first luminescence unit is made up of the AlGaInP series compound, and second kind of III-V family semiconductor structure of this of this second luminescence unit is made up of the aluminum indium gallium nitride series compound.
8. light-emitting component as claimed in claim 1; Wherein first kind of III-V family semiconductor structure of this of this first luminescence unit comprises single heterojunction structure or double-heterostructure, and/or wherein this second kind of III-V family semiconductor structure of this second luminescence unit comprises single quantum or multiple quantum trap structure.
9. light-emitting component as claimed in claim 1, wherein this first luminescence unit and this second luminescence unit comprise respectively at least:
First conductive-type semiconductor layer;
Active layer is positioned on this first conductive-type semiconductor layer; And
Second conductive-type semiconductor layer is positioned on this active layer.
10. light-emitting component as claimed in claim 9, wherein this first luminescence unit and/or this second luminescence unit comprise the growth substrate respectively.
11. light-emitting component as claimed in claim 9, wherein this first luminescence unit and/or this second luminescence unit engage with this carrier through knitting layer respectively.
12. light-emitting component as claimed in claim 1, wherein this first luminescence unit emission wavelength scope is 600-750nm, and this second luminescence unit emission wavelength scope is 460-530nm.
13. a back light module device comprises:
Light supply apparatus is made up of the optional one of which of the described light-emitting component of claim 1～12;
Optical devices place the going out on the light path of this light supply apparatus; And
Power system provides this light supply apparatus required power supply.
14. a lighting device comprises:
Light supply apparatus is made up of the optional one of which of the described light-emitting component of claim 1～12;
Power system provides this light supply apparatus required power supply; And
Control element is controlled this this light supply apparatus of power supply input.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010243826 CN102347322B (en) | 2010-08-02 | 2010-08-02 | Light-emitting element, backlight module device and illuminating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010243826 CN102347322B (en) | 2010-08-02 | 2010-08-02 | Light-emitting element, backlight module device and illuminating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102347322A true CN102347322A (en) | 2012-02-08 |
| CN102347322B CN102347322B (en) | 2013-07-10 |
Family
ID=45545827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010243826 Active CN102347322B (en) | 2010-08-02 | 2010-08-02 | Light-emitting element, backlight module device and illuminating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102347322B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752414A (en) * | 2013-12-26 | 2015-07-01 | 丰田合成株式会社 | Light-emitting part and light-emitting apparatus, and production methods therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2256561Y (en) * | 1996-05-27 | 1997-06-18 | 上海南北机械电气工程有限公司 | Full collective super high photo effect LED light array surface light source signalling apparatus |
| US20080278432A1 (en) * | 2007-05-08 | 2008-11-13 | Victor Company Of Japan, Limited | Liquid crystal display device and image display method thereof |
| CN101360373A (en) * | 2007-08-01 | 2009-02-04 | 深圳Tcl工业研究院有限公司 | Power control method for LED backlight and LED display |
-
2010
- 2010-08-02 CN CN 201010243826 patent/CN102347322B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2256561Y (en) * | 1996-05-27 | 1997-06-18 | 上海南北机械电气工程有限公司 | Full collective super high photo effect LED light array surface light source signalling apparatus |
| US20080278432A1 (en) * | 2007-05-08 | 2008-11-13 | Victor Company Of Japan, Limited | Liquid crystal display device and image display method thereof |
| CN101360373A (en) * | 2007-08-01 | 2009-02-04 | 深圳Tcl工业研究院有限公司 | Power control method for LED backlight and LED display |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752414A (en) * | 2013-12-26 | 2015-07-01 | 丰田合成株式会社 | Light-emitting part and light-emitting apparatus, and production methods therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102347322B (en) | 2013-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8283684B2 (en) | LED semiconductor body and use of an LED semiconductor body | |
| JP5497641B2 (en) | LED with integrated constant current drive circuit | |
| KR101646633B1 (en) | Light emitting device | |
| US7525248B1 (en) | Light emitting diode lamp | |
| TWI414088B (en) | Light-emitting device and the manufacturing method thereof | |
| KR100928259B1 (en) | Light emitting device and manufacturing method thereof | |
| US9847371B2 (en) | Light emitting diode chip for high voltage operation and light emitting diode package including the same | |
| CN101740557B (en) | Vertical-type alternative-current light emitting diode | |
| TWI445156B (en) | Light-emitting device | |
| US20080303041A1 (en) | Light emitting element, manufacturing method thereof and light emitting module using the same | |
| Onushkin et al. | Efficient alternating current operated white light-emitting diode chip | |
| CN102255011B (en) | Manufacturing method of high-voltage direct current (DC) light-emitting diode (LED) chip | |
| TW200926883A (en) | High voltage LED lighting system | |
| CN102347322B (en) | Light-emitting element, backlight module device and illuminating device | |
| TWI499347B (en) | Light-emitting device | |
| CN102842669B (en) | Photoelectric cell | |
| KR100642522B1 (en) | Light emitting diode employing a patterned transparent substrate | |
| TWI581398B (en) | Light-emitting device | |
| CN112397490A (en) | Plant light filling is with just installing high pressure LED light source and illumination equipment | |
| CN112397489A (en) | High-voltage alternating-current LED light source for plant light supplement and illumination equipment | |
| TWI463694B (en) | A light-emitting device | |
| CN102593289B (en) | Light-emitting element | |
| CN102130097B (en) | Semiconductor element | |
| CN103579453A (en) | Light emitting device | |
| US8354683B2 (en) | Semiconductor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |