CN102346260B - X-ray flat panel detector with temperature sensing function and preparation method thereof - Google Patents
X-ray flat panel detector with temperature sensing function and preparation method thereof Download PDFInfo
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- CN102346260B CN102346260B CN 201110151790 CN201110151790A CN102346260B CN 102346260 B CN102346260 B CN 102346260B CN 201110151790 CN201110151790 CN 201110151790 CN 201110151790 A CN201110151790 A CN 201110151790A CN 102346260 B CN102346260 B CN 102346260B
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Abstract
The invention provides an X-ray flat panel detector with a temperature sensing function. The detector comprises a flat panel detector (101) and a circuit board (102) arranged below the flat panel detector (101); the flat panel detector (101) comprises glass substrates (203), a pixel array (202) arranged on one side of the glass substrates (203), and a scintillator layer (201) arranged above the pixel array (202); the circuit board (102) comprises a power management circuit board, a system controlled circuit board, a signal reading circuit board, and a peripheral circuit of temperature sensing elements (303); and the flat panel detector (101) also comprises a temperature sensing unit array (204) which is arranged on the other side of the glass substrates (203) and composed of a plurality of temperature sensing elements (303) with an automatic biasing structure. In the invention, temperature sensing units are arranged on the other side of the glass substrates, therefore, the pixel area is not increased, and the aperture opening ratio of pixels is reduced; and meanwhile, because the temperature sensing units are closer to a heat source of the X-ray flat panel detector, an X-ray image subjected to temperature correction is more accurate.
Description
Technical field
The present invention relates to X ray digital imagery field, refer in particular to Flat X-ray detector with temperature sense function and preparation method thereof.
Background technology
At present, the Digitized X-ray photograph detects (Digital Radiography is called for short DR) technology and is widely used on Medical Instruments, for example takes the X-ray production apparatus of X ray rabat.
Digitized X-ray is taken a picture and is detected the electronic imaging plate technique-flat-panel detector technology (FPD Technique) that adopts that is often referred to.Wherein the electronic imaging plate becomes the queue arrangement to form by a large amount of small detectors with thin film transistor (TFT) (TFT).Flat X-ray detector is owing to the image of X ray can being changed into to the main flow accessory that digitized video becomes modern x-ray imaging system.Flat X-ray detector can be divided into two classes: direct-type and indirect type.
The indirect type Flat X-ray detector is sandwich construction, mainly by scintillator layers (mainly containing at present cesium iodide CsI) or fluorophor (GdSO) layer, thin film transistor (TFT) (TFT) on-off element and PIN photodiode, formed, generally adopt amorphous silicon technology (amorphous silicon) to realize.X ray first changes visible ray into by scintillator layers, change electric signal by photodiode into by visible ray again, then the image processing system of by thin film transistor (TFT) (TFT) on-off element, computing machine is read and be sent to the digitized signal of each pixel is integrated into X ray image, finally obtains Digital Image Display.
The direct-type Flat X-ray detector, as its name suggests, can directly change X ray into electric signal.It consists of the opto-electronic conversion components and parts to the X ray sensitivity, generally adopts amorphous selenium technique (amorphous selenium) to realize.Concrete, the direct-type Flat X-ray detector is charge biased to thin film transistor (TFT) by the photoelectricity that uses the TFT circuit directly scintillator to be changed, and produces the photoelectricity electric charge in the TFT circuit, thereby inducts photoelectric current.Then, photoelectric current is treated to digital picture by ADC.Direct-type DR is used simple in structure, wherein has the scintillator and the TFT circuit that directly are attached to the material based on unformed selenium on the TFT circuit and is directly setovered.
No matter be direct-type Flat X-ray detector or indirect type Flat X-ray detector, the variation of temperature all can impact the quality of X ray image, is mainly reflected in that dark current changes, the mirage in electric charge noise and image etc.So in order to obtain more accurate X ray image, better by X ray image, to judge the cause of disease, existing Flat X-ray detector all can integrated temperature sense module, due to the thermal source of Flat X-ray detector mainly from the indivedual chips on power management and signal read circuit plate, so the method for integrated temperature induction module mainly contains two kinds: 1, on power management and signal read circuit plate, mount temperature sensor; 2, temperature induction unit is integrated in the pixel cell of TFT face glass (technology contents as disclosed as the patent US2009/0127470A1 of Mathias Hoernig).For first method, implementation method is comparatively simple, and cost is lower, but, owing between circuit board and TFT face glass, having temperature contrast, the temperature signal of gained can't accurately be eliminated the impact of temperature on X ray image.For second method, the temperature obtained is more accurate than the first, but, because temperature induction unit and TFT pixel cell are positioned at the same face of glass substrate, has taken the space of PIN photodiode, has reduced the aperture opening ratio of pixel.
Given this, be to be necessary to design a kind of new Flat X-ray detector with temperature sense function to solve the problems of the technologies described above.
Summary of the invention
The technical problem to be solved in the present invention is not increase elemental area, guaranteeing to realize the integration of temperature sense and Flat X-ray detector under the prerequisite of aperture opening ratio and X ray image quality.
In order to achieve the above object, the present invention adopts following technical scheme: provide a kind of Flat X-ray detector with temperature sense function, the circuit board that described Flat X-ray detector comprises flat panel detector and is positioned at the flat panel detector below; Described flat panel detector comprises glass substrate, is positioned at the pel array of glass substrate one side and is positioned at the scintillator layers on pel array; Described circuit board comprises the peripheral circuit of electric power management circuit plate, system, control circuit plate and signal read circuit plate and temperature sensitive member; This flat panel detector also comprises and is positioned at the temperature induction unit array that temperature sensitive member that the glass substrate opposite side has the automatic biasing structure by several forms.
Preferably, described temperature sensitive member comprises the gate electrode be positioned on glass substrate; Gate electrode dielectric layer on the deposition gate electrode; The passivation layer that is positioned at the active area that on the gate electrode dielectric layer, resistance can change along with the variation of temperature, the source electrode that is positioned at the active area two ends and drain electrode and surrounds described temperature sensitive member.
Preferably, the peripheral circuit of described temperature sensitive member is included as temperature sensitive member the bias current sources of constant electric current supply and the sensing circuit be connected with temperature sensitive member is provided.
Preferably, described sensing circuit comprises the first electric capacity, the operational amplifier be connected with the first electric capacity and the second electric capacity that is connected across operational amplifier input end and output terminal, for the temperature signal to temperature sensitive member output, is amplified.
Preferably, described pel array comprises thin film transistor (TFT) and the PIN photodiode be positioned on glass substrate.
The present invention also provides a kind of preparation method with Flat X-ray detector of temperature sense function, and it comprises the following steps:
1) prepare pel array in glass substrate one side;
2) at glass substrate opposite side preparation temperature sensing element.
Preferably, described step 2) comprise the following steps:
A) at first on glass substrate, manufacture gate metal;
B) then on gate metal, generate the gate electrode dielectric layer;
C) then on the gate electrode dielectric layer, generate active area, described active area comprises thicker amorphous silicon film and the thinner n+ amorphous silicon film of one deck successively;
D) then manufacture source electrode and the drain electrode of temperature sensitive member;
E) last, whole one deck passivation layer that generates on temperature sensitive member.
Preferably, described gate material is metal molybdenum Mo or chromium Cr.
Preferably, described gate electrode dielectric layer material is SiNx.
Preferably, described source electrode and drain electrode consist of molybdenum/aluminium/molybdenum alloy.
The present invention is a kind of, and to have the advantage of Flat X-ray detector of temperature sense function as follows:
1, Flat X-ray detector is integrated with the temperature sense function, can to X ray image, be proofreaied and correct by temperature signal, reduces the impact of temperature on X ray image.
2, the temperature induction unit in Flat X-ray detector is positioned at the other one side of glass substrate, can not increase the aperture opening ratio of elemental area, reduction pixel.
3, the temperature induction unit in Flat X-ray detector is positioned at the other one side of glass substrate, more near the thermal source of Flat X-ray detector, more accurate by the X ray image after temperature correction.
The present invention manufactures temperature induction unit by the other one side of the glass substrate at more close thermal source, obtains the real time temperature signal of face glass, in order to obtain more accurate X ray image.
The accompanying drawing explanation
Now specifically describe by reference to the accompanying drawings technical scheme of the present invention.
The schematic diagram that Fig. 1 is Flat X-ray detector.
Fig. 2 is indirect type Flat X-ray detector section of structure of the present invention.
The sectional view that Fig. 3 is Flat X-ray detector dot structure of the present invention and temperature sensitive member.
The structure that Fig. 4 is Flat X-ray detector temperature sense circuit of the present invention.
The component symbol explanation
Thermal source 103 scintillator layers 201
Pel array 202 glass substrate 203
Temperature induction unit array 204 X ray 205
Thin film transistor (TFT) (TFT) 301 PIN photodiode 302
Gate electrode dielectric layer 305 active areas 306
Bias current sources 401 sensing circuits 402
The first electric capacity 403 second electric capacity 404
Embodiment
Further set forth the Flat X-ray detector with temperature sense function provided by the invention below by specific embodiment.But the present invention only limits to by no means embodiment.
A kind of Flat X-ray detector with temperature sense function, the circuit board 102 that described Flat X-ray detector comprises flat panel detector 101 and is positioned at the flat panel detector below; Described flat panel detector 101 comprises glass substrate 203, is positioned at the pel array 202 of glass substrate 203 1 sides and is positioned at the scintillator layers 201 on pel array 202; Described circuit board 102 comprises the peripheral circuit of electric power management circuit plate, system, control circuit plate and signal read circuit plate and temperature sensitive member 303; This flat panel detector 101 also comprises and is positioned at the temperature induction unit array 204 that temperature sensitive member 303 that glass substrate 203 opposite sides have the automatic biasing structure by several forms.
Described temperature sensitive member 303 comprises the gate electrode 304 be positioned on glass substrate 203; Gate electrode dielectric layer 305 on deposition gate electrode 304; The passivation layer that is positioned at the active area 306 that on gate electrode dielectric layer 305, resistance can change along with the variation of temperature, the source electrode 307 that is positioned at the active area two ends and drain electrode 308 and surrounds described temperature sensitive member 303.
Described peripheral circuit is included as temperature sensitive member 303 bias current sources 401 of constant electric current supply and the sensing circuit 402 be connected with temperature sensitive member 303 is provided.
Described sensing circuit 402 comprises the first electric capacity 403, the operational amplifier 405 be connected with the first electric capacity 403 and the second electric capacity 404 that is connected across operational amplifier 405 input ends and output terminal, for the temperature signal to temperature sensitive member 303 outputs, is amplified.
Described pel array 202 comprises thin film transistor (TFT) 301 and the PIN photodiode 302 be positioned on glass substrate 203.
Concrete, refer to Fig. 1, schematic diagram for the classic flat-plate X-ray detector, wherein flat panel detector 101 is the pel array in Flat X-ray detector, the below of flat panel detector 101 is circuit board 102, circuit board 102 comprises the peripheral circuit of electric power management circuit plate, signal read circuit plate and system, control circuit plate and temperature sensitive member 303, wherein, described peripheral circuit is included as temperature sensitive member 303 bias current sources 401 of constant electric current supply and the sensing circuit 402 be connected with temperature sensitive member 303 is provided.Electric power management circuit plate, signal read circuit plate and system, control circuit plate are general knowledge known in this field, do not repeat them here its structure and principle of work.In figure, 103 represent thermal source main on circuit board 102, its position use for illustrative purposes only.After thermal source 103 temperature variation, on flat panel detector 101, the temperature of relevant position also changes thereupon, and picture quality also descends thereupon.
Figure 2 shows that indirect type Flat X-ray detector section of structure of the present invention, comprising: scintillator layers 201, pel array 202, glass substrate 203 and temperature induction unit array 204.Wherein scintillator layers 201 is for changing X ray 205 into visible ray, pel array 202 is for changing visible ray into electric signal, and by data line, spread out of chronologically, temperature induction unit array 204 is for the temperature of real-time induction flat panel detector 101 diverse locations, for the correction to X ray image.
Figure 3 shows that the sectional view of Flat X-ray detector dot structure of the present invention and temperature sensitive member.As can be seen from the figure, the pel array of Flat X-ray detector (comprising TFT301 and PIN photodiode 302) and temperature sensitive member 303 are distributed in the both sides of glass substrate 203.Temperature sensitive member 303 has the structure identical with TFT301, comprising: the gate electrode 304 consisted of metal molybdenum (Mo) or chromium (Cr); The gate electrode dielectric layer 305 formed by SiNx; The active area 306 formed by amorphous silicon and n+ amorphous silicon, its resistance can change along with the variation of temperature, is the important component part of temperature sensitive member 303; The source electrode 307 and the drain electrode 308 that by molybdenum/aluminium/molybdenum alloy (Mo/Al/Mo), are formed.
Figure 4 shows that the structure of Flat X-ray detector temperature sense circuit of the present invention, mainly comprise the peripheral circuit of temperature sensitive member 303 and temperature sensitive member 303.Described peripheral circuit is respectively: bias current sources 401 and sensing circuit 402.Wherein bias current sources 401 provides constant electric current supply to temperature sensitive member 303; Gate electrode and the drain electrode of temperature sensitive member 303 connect together, and form the automatic biasing structure, and its function is equivalent to the variable resistor of a resistance with temperature change, and concrete resistance variations curve is by the decision that forms of active area 306; Sensing circuit 402 comprises electric capacity 403,404 and operational amplifier 405, and the temperature signal that can obtain temperature sensitive member 303 carries out preliminary amplification and processing.Temperature sensitive member 303 in Flat X-ray detector temperature sense circuit of the present invention is manufactured on the other one side of glass substrate, and bias current sources 401 and sensing circuit 402 are all realized by peripheral circuit, be not integrated on face glass.
In the Flat X-ray detector the present invention relates to, temperature sensitive member 303 can be evenly distributed on whole face glass, for obtaining the Temperature Distribution situation that face glass is complete; Also can pass through measurement in advance, by temperature sensitive member 303 design in requisition for ，Gai position, position by the heat source position decision of peripheral circuit plate.
Flat X-ray detector structure with temperature sense function involved in the present invention as shown in Figure 3.
Flat X-ray detector with temperature sense function involved in the present invention consists of control element TFT301, PIN photodiode 302 and temperature sensitive member 303.Because temperature sensitive member 303 has identical structure with TFT301, so both can manufacture simultaneously, can not increase too much technological process, back only illustrates the manufacturing process of temperature sensitive member, the manufacturing process of TFT and PIN photodiode repeats no more.At first manufacture the gate metal 304 of temperature sensitive member 303, in the present invention, that this layer of metal use is molybdenum (Mo); Then generate layer of sin x film 305 above metal film, as the dielectric layer of gate metal; Then generate the active area 306 of temperature sensitive member 303 on SiNx, the n+ amorphous silicon film that the amorphous silicon film that active area 306 is thicker by one deck and one deck are thinner forms; Then manufacture source electrode 307 and the drain electrode 308 of temperature sensitive member 303, that in the present invention, this electrode is used is molybdenum/aluminium/molybdenum alloy (Mo/Al/Mo).So far, the temperature sensitive member 303 in the present invention has formed, finally at the whole generation in the back side of glass substrate one deck passivation layer SiNx, for temperature sensitive member 303 is protected.
The present invention is not increasing elemental area, is guaranteeing under the prerequisite of aperture opening ratio and X ray image quality, by temperature sensitive member being manufactured on to the another side of glass substrate, realize the integration of temperature sense function and Flat X-ray detector, improve the performance of Flat X-ray detector, saved manufacturing cost.Simultaneously more near the thermal source of Flat X-ray detector, more accurate by the X ray image after temperature correction.
The above-mentioned description to embodiment is can understand and apply the invention for ease of those skilled in the art.The person skilled in the art obviously can easily make various modifications to these embodiment, and General Principle described herein is applied in other embodiment and needn't passes through performing creative labour.Therefore, the invention is not restricted to the embodiment here, those skilled in the art are according to announcement of the present invention, and the improvement of making for the present invention and modification all should be within protection scope of the present invention.
Claims (8)
1. the Flat X-ray detector that there is the temperature sense function, the circuit board (102) that described Flat X-ray detector comprises flat panel detector (101) and is positioned at flat panel detector (101) below; Described flat panel detector (101) comprises glass substrate (203), is positioned at the pel array (202) of glass substrate (203) one sides and is positioned at the scintillator layers (201) on pel array (202); Described circuit board (102) comprises the peripheral circuit of electric power management circuit plate, system, control circuit plate and signal read circuit plate and temperature sensitive member (303); It is characterized in that: this flat panel detector (101) also comprises that being positioned at glass substrate (203) opposite side has the temperature induction unit array (204) of temperature sensitive member (303) formation of automatic biasing structure by several;
Described temperature sensitive member (303) comprises the gate electrode (304) be positioned on glass substrate (203); Gate electrode dielectric layer (305) on gate electrode (304); Be positioned at gate electrode dielectric layer (305) active area (306), the source electrode (307) that is positioned at the active area two ends and drain electrode (308) that above resistance can change along with the variation of temperature and the passivation layer that surrounds described temperature sensitive member (303).
2. the Flat X-ray detector with temperature sense function as claimed in claim 1 is characterized in that: the peripheral circuit of described temperature sensitive member (303) is included as temperature sensitive member (303) bias current sources (401) of constant electric current supply and the sensing circuit (402) be connected with temperature sensitive member (303) is provided.
3. the Flat X-ray detector with temperature sense function as claimed in claim 2, it is characterized in that: described sensing circuit (402) comprises the first electric capacity (403), the operational amplifier (405) be connected with the first electric capacity (403) and the second electric capacity (404) that is connected across operational amplifier (405) input end and output terminal, for the temperature signal to temperature sensitive member (303) output, is amplified.
4. the Flat X-ray detector with temperature sense function as claimed in claim 1, it is characterized in that: described pel array (202) comprises thin film transistor (TFT) (301) and the PIN photodiode (302) be positioned on glass substrate (203).
5. the preparation method with Flat X-ray detector of temperature sense function, it is characterized in that: it comprises the following steps:
1) prepare pel array (202) in glass substrate (203) one sides;
2) at glass substrate (203) opposite side preparation temperature sensing element (303);
Described step 2) comprise the following steps:
A) at first at the upper gate metal (304) of manufacturing of glass substrate (203);
B) then at the upper gate electrode dielectric layer (305) that generates of gate metal (304);
C) then at the upper active area (306) that generates of gate electrode dielectric layer (305), described active area (306) comprises thicker amorphous silicon film and the thinner n+ amorphous silicon film of one deck successively;
D) then manufacture source electrode (307) and the drain electrode (308) of temperature sensitive member (303);
E) last, at the upper whole one deck passivation layer that generates of temperature sensitive member (303).
6. a kind of preparation method with Flat X-ray detector of temperature sense function as claimed in claim 5, is characterized in that, described gate metal (304) material is metal molybdenum Mo or chromium Cr.
7. a kind of preparation method with Flat X-ray detector of temperature sense function as claimed in claim 5, is characterized in that, described gate electrode dielectric layer (305) material is SiNx.
8. a kind of preparation method with Flat X-ray detector of temperature sense function as claimed in claim 5, is characterized in that, described source electrode (307) and drain electrode (308) consist of molybdenum/aluminium/molybdenum alloy.
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| CN103300873A (en) * | 2013-06-04 | 2013-09-18 | 上海奕瑞光电子科技有限公司 | Portable X-ray flat panel detector with display function |
| US10551510B2 (en) * | 2014-10-24 | 2020-02-04 | Rigaku Corporation | Data processing apparatus, method of obtaining characteristic of each pixel and method of data processing, and program |
| CN104898153B (en) * | 2015-06-24 | 2018-06-19 | 廖小雄 | A kind of infant industry and medical image Photoelectric Detection board device |
| CN109633731B (en) * | 2018-11-29 | 2023-10-03 | 上海奕瑞光电子科技股份有限公司 | Detector and manufacturing method thereof |
| CN113053965B (en) * | 2021-03-09 | 2023-04-07 | 京东方科技集团股份有限公司 | Display device, preparation method and temperature detection method |
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| CN202126502U (en) * | 2011-06-08 | 2012-01-25 | 上海奕瑞光电子科技有限公司 | Panel X-ray detector with temperature sensing function |
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| US6713769B2 (en) * | 2002-02-07 | 2004-03-30 | Ge Medical Systems Global Technology Company, Llc | Method of sensing temperature of a digital X-ray imaging system |
| JP4656808B2 (en) * | 2002-11-27 | 2011-03-23 | 株式会社アルバック | Vacuum apparatus and heat treatment apparatus |
| JP2009013437A (en) * | 2007-06-29 | 2009-01-22 | Fujifilm Corp | Substrate holder and vacuum film deposition apparatus |
| DE102007054832A1 (en) * | 2007-11-16 | 2009-05-14 | Siemens Ag | Flat panel detector with temperature sensor |
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Address after: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Patentee after: Shanghai Yi Ruiguang electronic Polytron Technologies Inc Address before: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Patentee before: Shanghai Yirui Optoelectronics Technology Co., Ltd. |