CN102343538A - Chamfering method for edge of silicon wafer - Google Patents
Chamfering method for edge of silicon wafer Download PDFInfo
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- CN102343538A CN102343538A CN2011102318212A CN201110231821A CN102343538A CN 102343538 A CN102343538 A CN 102343538A CN 2011102318212 A CN2011102318212 A CN 2011102318212A CN 201110231821 A CN201110231821 A CN 201110231821A CN 102343538 A CN102343538 A CN 102343538A
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- chamfering
- silicon chip
- abrasive wheel
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Abstract
The invention discloses a chamfering method for an edge of a silicon wafer. In the method, the edge of the silicon wafer is ground by using a chamfering grinding wheel for chamfering; the method is characterized in that: a four-circle chamfering method is adopted; chamfering speed from the first circle to the third circle is 27-35mm/12-18s; and the chamfering speed of the fourth circle is 20-26mm/10-14s. By the chamfering method for the edge of the silicon wafer, the chamfering quality of the silicon wafer can be improved. By adopting the chamfering method for the edge of the silicon wafer, the chamfering scratch rate is reduced to 0.0502 percent. The chamfering reject ratio is reduced to 0.063 percent.
Description
Technical field
The present invention relates to a kind of silicon chip edge chamfering method.
Background technology
The purpose of silicon chip chamfer machining is will eliminate silicon chip edge surface owing to corner angle, the burr that after cutting processing, produces, collapse limit, crack or other defective and various edge surface pollutes; Thereby reduce the roughness of silicon chip surface, increase the mechanical strength on silicon chip edge surface, the surface contamination of minimizing particle.
Chamfering method of the prior art, the product yield is low, causes production cost high.When using R type, 11 degree emery wheels, the fillet surface width of cloth >=600um, the silicon chip chamfering of chamfer machining scratches, chamfering asterism fraction defective summation is 0.09%.Especially the back water fraction defective reaches 0.62% in the chamfering abrasive wheel that uses R type, 11 degree, emery wheel notch 0.17R is attached most importance to boron-doping silicon chip chamfer machining process.
Summary of the invention
The objective of the invention is in order to overcome deficiency of the prior art, a kind of silicon chip edge chamfering method that reduces the chamfering fraction defective is provided.
For realizing above purpose, the present invention realizes through following technical scheme:
The silicon chip edge chamfering method uses chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, it is characterized in that, adopts the method for 4 circle chamferings, and the 1st to the 3rd circle chamfering speed is 27～35mm/12～18s; The 4th circle chamfering speed is 20-26mm/10～14s.
Preferably, before the chamfering abrasive wheel grinding silicon chip, use oilstone finishing chamfering abrasive wheel notch.
Preferably, when using oilstone finishing diamond chamfering abrasive wheel, the angle between oilstone and the chamfering abrasive wheel edge tangent line is 45 °～60 °.
Preferably, during to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone removal amount is 0.5～1.5cm.
Preferably, use Y type hydraulic giant to spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.
Preferably, the pressure of the grinding fluid of said hydraulic giant injection is 2.5～3.5KG/cm
2About.
Preferably, said chamfering abrasive wheel is R type 11 degree emery wheels.
Preferably, the fillet surface width of cloth >=600um.
Preferably, the said silicon chip boron-doping silicon chip of attaching most importance to, said chamfering abrasive wheel are R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.
Silicon chip edge chamfering method among the present invention can improve the silicon chip chamfer quality.Use the silicon chip edge chamfering method among the present invention, it is 0.0502% that chamfering scratches ratio.The chamfering fraction defective reduces to 0.063%.
Description of drawings
Position view when Fig. 1 repairs chamfering abrasive wheel for using oilstone.
The Y type hydraulic giant structural representation of Fig. 2 for using among the present invention.
The specific embodiment
Below in conjunction with accompanying drawing the present invention is carried out detailed description:
Embodiment 1
Silicon chip edge chamfering method, the silicon chip boron-doping silicon chip of attaching most importance to, the fillet surface width of cloth >=600um.Use chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, said chamfering abrasive wheel is R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.Adopt the method for 4 circle chamferings, the 1st to the 3rd circle chamfering speed is 25mm/15s; The 4th circle chamfering speed is 20mm/12s.
Before the chamfering abrasive wheel grinding silicon chip, use oilstone finishing chamfering abrasive wheel notch.As shown in Figure 1, when using oilstone 3 finishing diamond chamfering abrasive wheels 1, oilstone 3 is positioned in the ceramic dishwashing 2, and the angle between oilstone 3 and the chamfering abrasive wheel 1 edge tangent line is 45 °.During to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone 3 removal amounts are 0.5cm.
As shown in Figure 2, Y type hydraulic giant 4 is provided with nozzle 41 and nozzle 42.Spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.The pressure of the grinding fluid that hydraulic giant sprays is 2.5KG/cm
2About.Because of there being the silicon bits to produce in the chamfer process, prior art processes can't in time be got rid of the silicon bits, stopping state occurs, causes appearance such as chamfering scuffing.Use the Y type hydraulic giant among the present invention, chip removal in time after the correction of use oilstone.
Use the technology of 4 circle chamferings among the present invention, can reduce the excretion of every circle.Each circle chamfering all has different effects, the 1st circle: remove barreling damage layer; The 2nd circle: remove the damage layer that first lap produces; The 3rd circle: smart groove R value change conversion; The 4th circle: smart groove correction.
Silicon chip edge chamfering method, the silicon chip boron-doping silicon chip of attaching most importance to, the fillet surface width of cloth >=600um.Use chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, said chamfering abrasive wheel is R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.Adopt the method for 4 circle chamferings, the 1st to the 3rd circle chamfering speed is 30mm/15s; The 4th circle chamfering speed is 25mm/12s.
Before the chamfering abrasive wheel grinding silicon chip, use oilstone finishing chamfering abrasive wheel notch.As shown in Figure 1, when using oilstone 3 finishing diamond chamfering abrasive wheels 1, oilstone 3 is positioned in the ceramic dishwashing 2, and the angle between oilstone 3 and the chamfering abrasive wheel 1 edge tangent line is 45 °.During to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone 3 removal amounts are 1cm.
As shown in Figure 2, Y type hydraulic giant 4 is provided with nozzle 41 and nozzle 42.Spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.The pressure of the grinding fluid that hydraulic giant sprays is 3KG/cm
2About.Because of there being the silicon bits to produce in the chamfer process, prior art processes can't in time be got rid of the silicon bits, stopping state occurs, causes appearance such as chamfering scuffing.Use the Y type hydraulic giant among the present invention, chip removal in time after the correction of use oilstone.
Use the technology of 4 circle chamferings among the present invention, can reduce the excretion of every circle.Each circle chamfering all has different effects, the 1st circle: remove barreling damage layer; The 2nd circle: remove the damage layer that first lap produces; The 3rd circle: smart groove R value change conversion; The 4th circle: smart groove correction.
Silicon chip edge chamfering method, the silicon chip boron-doping silicon chip of attaching most importance to, the fillet surface width of cloth >=600um.Use chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, said chamfering abrasive wheel is R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.Adopt the method for 4 circle chamferings, the 1st to the 3rd circle chamfering speed is 33mm/15s; The 4th circle chamfering speed is 25mm/12s.
Before the chamfering abrasive wheel grinding silicon chip, use oilstone finishing chamfering abrasive wheel notch.As shown in Figure 1, when using oilstone 3 finishing diamond chamfering abrasive wheels 1, oilstone 3 is positioned in the ceramic dishwashing 2, and the angle between oilstone 3 and the chamfering abrasive wheel 1 edge tangent line is 60 °.During to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone 3 removal amounts are 1.5cm.
As shown in Figure 2, Y type hydraulic giant 4 is provided with nozzle 41 and nozzle 42.Spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.The pressure of the grinding fluid that hydraulic giant sprays is 3KG/cm
2About.Because of there being the silicon bits to produce in the chamfer process, prior art processes can't in time be got rid of the silicon bits, stopping state occurs, causes appearance such as chamfering scuffing.Use the Y type hydraulic giant among the present invention, chip removal in time after the correction of use oilstone.
Use the technology of 4 circle chamferings among the present invention, can reduce the excretion of every circle.Each circle chamfering all has different effects, the 1st circle: remove barreling damage layer; The 2nd circle: remove the damage layer that first lap produces; The 3rd circle: smart groove R value change conversion; The 4th circle: smart groove correction.
Embodiment 4
Silicon chip edge chamfering method, the silicon chip boron-doping silicon chip of attaching most importance to, the fillet surface width of cloth >=600um.Use chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, said chamfering abrasive wheel is R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.Adopt the method for 4 circle chamferings, the 1st to the 3rd circle chamfering speed is 30mm/13s; The 4th circle chamfering speed is 25mm/10s.
Before the chamfering abrasive wheel grinding silicon chip, use oilstone finishing chamfering abrasive wheel notch.As shown in Figure 1, when using oilstone 3 finishing diamond chamfering abrasive wheels 1, oilstone 3 is positioned in the ceramic dishwashing 2, and the angle between oilstone 3 and the chamfering abrasive wheel 1 edge tangent line is 45 °.During to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone 3 removal amounts are 1cm.
As shown in Figure 2, Y type hydraulic giant 4 is provided with nozzle 41 and nozzle 42.Spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.The pressure of the grinding fluid that hydraulic giant sprays is 2.8KG/cm
2About.Because of there being the silicon bits to produce in the chamfer process, prior art processes can't in time be got rid of the silicon bits, stopping state occurs, causes appearance such as chamfering scuffing.Use the Y type hydraulic giant among the present invention, chip removal in time after the correction of use oilstone.
Use the technology of 4 circle chamferings among the present invention, can reduce the excretion of every circle.Each circle chamfering all has different effects, the 1st circle: remove barreling damage layer; The 2nd circle: remove the damage layer that first lap produces; The 3rd circle: smart groove R value change conversion; The 4th circle: smart groove correction.
Embodiment 5
Silicon chip edge chamfering method, the silicon chip boron-doping silicon chip of attaching most importance to, the fillet surface width of cloth >=600um.Use chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, said chamfering abrasive wheel is R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.Adopt the method for 4 circle chamferings, the 1st to the 3rd circle chamfering speed is 28mm/15s; The 4th circle chamfering speed is 25mm/12s.
Before the chamfering abrasive wheel grinding silicon chip, use oilstone finishing chamfering abrasive wheel notch.As shown in Figure 1, when using oilstone 3 finishing diamond chamfering abrasive wheels 1, oilstone 3 is positioned in the ceramic dishwashing 2, and the angle between oilstone 3 and the chamfering abrasive wheel 1 edge tangent line is 45 °.During to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone 3 removal amounts are 1.5cm.
As shown in Figure 2, Y type hydraulic giant 4 is provided with nozzle 41 and nozzle 42.Spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.The pressure of the grinding fluid that hydraulic giant sprays is 2.5KG/cm
2About.Because of there being the silicon bits to produce in the chamfer process, prior art processes can't in time be got rid of the silicon bits, stopping state occurs, causes appearance such as chamfering scuffing.Use the Y type hydraulic giant among the present invention, chip removal in time after the correction of use oilstone.
Use the technology of 4 circle chamferings among the present invention, can reduce the excretion of every circle.Each circle chamfering all has different effects, the 1st circle: remove barreling damage layer; The 2nd circle: remove the damage layer that first lap produces; The 3rd circle: smart groove R value change conversion; The 4th circle: smart groove correction.
The comparative example 1
Silicon chip edge chamfering method, the silicon chip boron-doping silicon chip of attaching most importance to, the fillet surface width of cloth >=600um.Use chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, said chamfering abrasive wheel is R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.Adopt the method for 2 circle chamferings, the 1st circle chamfering speed is 15mm/10s; The 2nd circle chamfering speed is 10mm/7s.Do not use sandstone finishing notch.Use single spray gun to spray grinding fluid.
Use embodiment 2 and comparative example's 1 chamfer machining silicon chip, and to the processing result test as follows:
Use the method chamfering among the comparative example 1,168136 of chamfer machining, 274 of chamfering asterisms, chamfering fraction defective 0.16%; Chamfering scratches 1049, and chamfering scratches fraction defective 0.62%.Chamfering fraction defective summation is 0.09%.
Use the method chamfering among the embodiment 2,1756337 of chamfer machining, 391 of chamfering asterisms, chamfering asterism fraction defective is 0.022%; Chamfering scratches 772.Chamfering scratches fraction defective 0.044%.Chamfering fraction defective summation is 0.063%.
Except that the hydraulic giant difference, other processing steps are all identical, use the chamfering silicon chip The performance test results of production of single hydraulic giant and Y type hydraulic giant following:
Use the method for embodiment 2 that silicon chip is carried out chamfer machining, the silicon chip The performance test results after the processing is following:
Embodiment among the present invention only is used for that the present invention will be described, does not constitute the restriction to the claim scope, and other substituting of being equal in fact that those skilled in that art can expect are all in protection domain of the present invention.
Claims (9)
1. the silicon chip edge chamfering method uses chamfering abrasive wheel grinding silicon chip edge to carry out chamfering, it is characterized in that, adopts the method for 4 circle chamferings, and the 1st to the 3rd circle chamfering speed is 27～35mm/12～18s; The 4th circle chamfering speed is 20-26mm/10～14s.
2. silicon chip edge chamfering method according to claim 1 is characterized in that, before the chamfering abrasive wheel grinding silicon chip, uses oilstone finishing chamfering abrasive wheel notch.
3. silicon chip edge chamfering method according to claim 2 is characterized in that, when using oilstone finishing diamond chamfering abrasive wheel, the angle between oilstone and the chamfering abrasive wheel edge tangent line is 45 °～60 °.
4. silicon chip edge chamfering method according to claim 3 is characterized in that, during to chamfering abrasive wheel finishing diamond chamfering abrasive wheel, oilstone removal amount is 0.5～1.5cm.
5. silicon chip edge chamfering method according to claim 1 is characterized in that, uses Y type hydraulic giant to spray grinding fluid to chamfering abrasive wheel and silicon chip edge respectively.
6. silicon chip edge chamfering method according to claim 4 is characterized in that, the pressure of the grinding fluid that said hydraulic giant sprays is 2.5～3.5KG/cm
2About.
7. silicon chip edge chamfering method according to claim 1 is characterized in that, said chamfering abrasive wheel is R type 11 degree emery wheels.
8. silicon chip edge chamfering method according to claim 1 is characterized in that, the fillet surface width of cloth >=600um.
9. silicon chip edge chamfering method according to claim 1 is characterized in that, the said silicon chip boron-doping silicon chip of attaching most importance to, said chamfering abrasive wheel are R type, 11 degree emery wheels, and the emery wheel notch is 0.17R.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102318212A CN102343538A (en) | 2011-08-14 | 2011-08-14 | Chamfering method for edge of silicon wafer |
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| CN2011102318212A CN102343538A (en) | 2011-08-14 | 2011-08-14 | Chamfering method for edge of silicon wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106914802A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of method for improving back of the body envelope silicon chip edge quality |
| CN107738370A (en) * | 2017-10-27 | 2018-02-27 | 四川永祥硅材料有限公司 | A kind of polysilicon chip preparation technology |
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| JP2002283201A (en) * | 2001-03-28 | 2002-10-03 | Mitsubishi Materials Silicon Corp | Manufacturing method of semiconductor wafer |
| CN201128094Y (en) * | 2007-12-25 | 2008-10-08 | 王兰涛 | Dry method edge grinding machine for pottery brick |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002283201A (en) * | 2001-03-28 | 2002-10-03 | Mitsubishi Materials Silicon Corp | Manufacturing method of semiconductor wafer |
| CN201128094Y (en) * | 2007-12-25 | 2008-10-08 | 王兰涛 | Dry method edge grinding machine for pottery brick |
Non-Patent Citations (3)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106914802A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of method for improving back of the body envelope silicon chip edge quality |
| CN107738370A (en) * | 2017-10-27 | 2018-02-27 | 四川永祥硅材料有限公司 | A kind of polysilicon chip preparation technology |
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Application publication date: 20120208 |