CN102338758A - PN junction dying method of bipolar transistor device doping structure - Google Patents
PN junction dying method of bipolar transistor device doping structure Download PDFInfo
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- CN102338758A CN102338758A CN2011102212538A CN201110221253A CN102338758A CN 102338758 A CN102338758 A CN 102338758A CN 2011102212538 A CN2011102212538 A CN 2011102212538A CN 201110221253 A CN201110221253 A CN 201110221253A CN 102338758 A CN102338758 A CN 102338758A
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Abstract
The invention provides a PN junction dying method of a bipolar transistor device doping structure. The method comprises the following steps: A, preparing a dying solution for the bipolar transistor device doping structure based on the condition that the volume ratio of HF:HNO3:CH3COOH:H2O is equal to 1:20:5:10; B, soaking the bipolar transistor sample subjected to microsection into the dying solution for 25 seconds and taking out, wherein when the sample is taken out, the sample section is ensured not to contact with any article, and the section is ensured to be clean; and C, performing section observation on the bipolar transistor device doping area by use of a scanning electronic microscope, taking the picture scanned by the scanning electronic microscope, and measuring the junction depth of the related doping structure. By utilizing the method provided by the invention, the junction depth of the same type of bipolar transistor device doping structure can be determined in future simply by using the obtained optimal experience value, thereby being fast and economical; and the junction depth of all doping structures can be obtained from one picture.
Description
Technical field
The present invention relates to a kind of PN junction colouring method of bipolar transistor device doped structure, particularly a kind of method of using special dyeing liquor to carry out PN junction dyeing.
Background technology
Bipolar transistor is a kind of current control device, and conduction is participated in electronics and hole simultaneously.Compare with field effect transistor, bipolar transistor switch speed is fast, but input impedance is little, and power consumption is big.The bipolar transistor volume is little, in light weight, little power consumption, the life-span is long, reliability is high, has been widely used in fields such as broadcasting, TV, communication, radar, computing machine, self-con-tained unit, electronic device, household electrical appliance, plays effects such as amplification, vibration, switch.The doped structure of bipolar transistor is for to produce three doped regions with different doping way on same silicon chip, and forms two PN junctions, has the structure of a buried regions simultaneously, just constituted transistor.
Adopt different doping processs,, P-type semiconductor and N-type semiconductor are produced on same block semiconductor (normally silicon or the germanium) substrate, just form the space charge region at their interface and claim PN junction through diffusion.Because doping type and doping content there are differences, the transition interface of an impurity concentration of PN junction existence, promptly we " knot " said (Junction), and its degree of depth we be referred to as " junction depth " (Junction Depth)." junction depth " to the doped structure of bipolar transistor in technological process carries out process monitoring, obtain " junction depth " information by certain technological means.
Normally used method is to use ion microprobe, and the conversion of secondary ion intensity process can obtain the concentration of element, and the ion bom bardment time is convertible into the Impurity Distribution degree of depth.So can measure deeply PN junction, obtain point-device depth value.But general ion microprobe is to have certain requirements to analyzing area; Generally require the analysis area of minimum 100umX100um; And to a transistor unit of bipolar transistor; Area possibly not reach so big requirement, so if a plurality of transistor of 100umX100um carries out the PN junction depth detection together, degree of accuracy is certain to descend.(paper draws certainly: the depth resolution ability of SIMS, and Zhu Yizheng, Guidong, the old concubine of an emperor, Ma Nongnong, Han Xiangming, the Cha Liang town, electronics the 46 research institute of the Ministry of Information Industry, Tianjin 300192, TN304, A)
Certainly using the chemical corrosion method of knot dyeing is the approach the most convenient, that cost is minimum, carries out the affirmation of junction depth, use be industry HF commonly used: HNO
3The knot dyeing liquor of=1: 100 (dyeing recipes of low sensitivity) there are differences because the silicon Silicon in different impurities doping content zone ties the speed of dyeing liquor corrosion, and it is fast that the dyeing liquor etch rate is tied in the zone that impurity concentration is high; And that the dyeing liquor etch rate is tied in the low zone of impurity concentration is slow, so can on the cross section, show the boundary line, directly measures with scanning electron microscope.But when this method is applied to " junction depth " of doped structure of bipolar transistor, find that effect is unsatisfactory,, even can not dye for the low zone of some doping contents.Therefore, need a kind of new method to measure the junction depth of the doped structure of bipolar transistor.
Summary of the invention
Inconsistent for solving existing junction depth dyeing in each doped region speed, be not easy to the problem of observation analysis, the present invention provides following technical scheme:
A kind of PN junction colouring method of bipolar transistor device doped structure may further comprise the steps:
A, HF: HNO by volume
3: CH
3COOH: H
2O=1: carry out the preparation of bipolar transistor device doped structure dyeing liquor at 20: 5: 10;
B, be soaked into the good bipolar transistor sample of microsection in the above-mentioned dyeing liquor and take out after 25 seconds, guarantee in the taking-up process that sample in cross section do not touch any article, guarantee that the cross section is clean;
C, use scanning electron microscope are carried out this bipolar transistor device doped region of cross-section, take the photo of scanning electron microscope scanning, and measure the junction depth of relevant doped structure.
The present invention has following advantage: through the PN junction prescription of its dyeing liquor of this kind to the bipolar transistor device doped structure; Carry out later this bipolar transistor device doped structure junction depth of the same race again and confirm that only needing to use the best empirical value that draws to obtain gets final product; Not only fast but also economical, the junction depth of all doped structures can obtain in a pictures.
Description of drawings
Fig. 1 bipolar transistor microsection structural representation;
Fig. 2 takes the picture of bipolar transistor doped structure through the inventive method dyeing back.
Embodiment
Do to set forth in detail in the face of this process implementing example down, thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to it will be appreciated by those skilled in the art that.
A kind of PN junction colouring method of bipolar transistor device doped structure may further comprise the steps:
A, HF: HNO by volume
3: CH
3COOH: H
2O=1: carry out the preparation of bipolar transistor device doped structure dyeing liquor at 20: 5: 10;
B, be soaked into the bipolar transistor sample that microsection is good shown in accompanying drawing 1 in the above-mentioned dyeing liquor and take out after 25 seconds, guarantee in the taking-up process that sample in cross section do not touch any article, guarantee that the cross section is clean;
C, use scanning electron microscope are carried out this bipolar transistor device doped region of cross-section; Take the photo of scanning electron microscope scanning; Shown in accompanying drawing 2; Can the doped structure of bipolar transistor clearly be apparent in the same pictures, can measure simultaneously the junction depth of relevant doped structure, shown in the each several part junction depth of surveying such as the accompanying drawing 2.
The above; Be merely one of embodiment of the present invention; But protection scope of the present invention is not limited thereto; Any those of ordinary skill in the art are in the technical scope that the present invention disclosed, and variation or the replacement that can expect without creative work all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain that claims were limited.
Claims (1)
1. the PN junction colouring method of a bipolar transistor device doped structure, it is characterized in that: this method may further comprise the steps:
A, HF: HNO by volume
3: CH
3COOH: H
2O=1: carry out the preparation of bipolar transistor device doped structure dyeing liquor at 20: 5: 10;
B, be soaked into the good bipolar transistor sample of microsection in the above-mentioned dyeing liquor and take out after 25 seconds, guarantee in the taking-up process that sample in cross section do not touch any article, guarantee that the cross section is clean;
C, use scanning electron microscope are carried out this bipolar transistor device doped region of cross-section, take the photo of scanning electron microscope scanning, and measure the junction depth of relevant doped structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102212538A CN102338758A (en) | 2011-08-03 | 2011-08-03 | PN junction dying method of bipolar transistor device doping structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102212538A CN102338758A (en) | 2011-08-03 | 2011-08-03 | PN junction dying method of bipolar transistor device doping structure |
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| CN102338758A true CN102338758A (en) | 2012-02-01 |
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| CN2011102212538A Pending CN102338758A (en) | 2011-08-03 | 2011-08-03 | PN junction dying method of bipolar transistor device doping structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013189132A1 (en) * | 2012-06-21 | 2013-12-27 | 中国科学院微电子研究所 | Method for determining pn junction depth |
| CN115824756A (en) * | 2022-10-31 | 2023-03-21 | 南京长芯检测科技有限公司 | Dyeing solution capable of distinguishing enhancement type MOS transistor from depletion type MOS transistor and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4554046A (en) * | 1983-09-22 | 1985-11-19 | Kabushiki Kaisha Toshiba | Method of selectively etching high impurity concentration semiconductor layer |
| US4681657A (en) * | 1985-10-31 | 1987-07-21 | International Business Machines Corporation | Preferential chemical etch for doped silicon |
-
2011
- 2011-08-03 CN CN2011102212538A patent/CN102338758A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4554046A (en) * | 1983-09-22 | 1985-11-19 | Kabushiki Kaisha Toshiba | Method of selectively etching high impurity concentration semiconductor layer |
| US4681657A (en) * | 1985-10-31 | 1987-07-21 | International Business Machines Corporation | Preferential chemical etch for doped silicon |
Non-Patent Citations (1)
| Title |
|---|
| SPINELLA,CORRADO: "Electrical and Morphological Characterization of Sub-Micron Silicon Devices", 《SOLID STATE DEVICE RESEARCH CONFERENCE, 1996. ESSDERC"96. PROCEEDINGS OF THE 26TH EUROPEAN》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013189132A1 (en) * | 2012-06-21 | 2013-12-27 | 中国科学院微电子研究所 | Method for determining pn junction depth |
| CN115824756A (en) * | 2022-10-31 | 2023-03-21 | 南京长芯检测科技有限公司 | Dyeing solution capable of distinguishing enhancement type MOS transistor from depletion type MOS transistor and application thereof |
| CN115824756B (en) * | 2022-10-31 | 2023-09-15 | 南京长芯检测科技有限公司 | Dyeing solution capable of distinguishing enhancement type from depletion type MOS transistor and application thereof |
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Application publication date: 20120201 |