CN102331594A - Method for manufacturing step-type phase grating - Google Patents
Method for manufacturing step-type phase grating Download PDFInfo
- Publication number
- CN102331594A CN102331594A CN201110279270A CN201110279270A CN102331594A CN 102331594 A CN102331594 A CN 102331594A CN 201110279270 A CN201110279270 A CN 201110279270A CN 201110279270 A CN201110279270 A CN 201110279270A CN 102331594 A CN102331594 A CN 102331594A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- etching
- phase grating
- semiconductor chip
- grade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention discloses a method for manufacturing a step-type phase grating. The method comprises the following steps of: 1. spin-coating an electro beam photoresist with the thickness of 500nm on a semiconductor substrate; 2. conducting photoetching and development on the electro beam photoresist to form a series of periodical photoresist steps containing zeroth to fifth steps; 3. etching the semiconductor substrate exposing from the surface of the zeroth photoresist step with the etching depth equal to the height of the first photoresist step, and then etching the first to fifth photoresist steps to cause the thickness of each photoresist step to be reduced by 100nm; 4. etching the exposed semiconductor substrate, and etching the photoresist steps to cause the thickness of each step to be reduced by 100nm; and 5. repeating the step 4 until the photoresist is completely removed, thus forming the step-type phase grating. In the invention, any step of phase grating is manufactured by utilizing the sensitivity of the electro beam photoresist on the dosage and the etching resistance property.
Description
Technical field
The present invention relates to the nanoscale elements manufacture technology field, relate in particular to a kind of method for making of notch cuttype phase grating.
Background technology
As everyone knows, along with the continuous development in nanoprocessing field, the demand of many steps grating is increasing; And general making at present all is to adopt repeatedly photoetching; The 2n step grating that the multiple etching technology forms, and repeatedly the step of photoetching is inhomogeneous, causes photoresist in uneven thickness; And be difficult to alignment issues on the precision and caused its thickness and step width also to be difficult to accurately, and its step number is difficult to any change.
Summary of the invention
The technical matters that (one) will solve
Can not the arbitrariness problem to the step of common many steps grating; Fundamental purpose of the present invention is to provide a kind of method for making of notch cuttype phase grating; In order to the susceptibility of electron beam resist to dosage, and anti-etching performance, any step phase grating made.
(2) technical scheme
For achieving the above object, the invention provides a kind of method for making of notch cuttype phase grating, comprising: step 1: spin coating one layer thickness is the electron beam resist of 500nm on semiconductor chip; Step 2: this electron beam resist is carried out photoetching and development; Form the 0th grade of the photoresist step that comprise of series of periodic to level V, the 0th grade to level V photoresist step with respect to the height of surface of semiconductor chip be followed successively by 0,100nm, 200nm, 300nm, 400nm and 500nm; Step 3: the 0th grade of semiconductor chip that the photoresist ledge surface exposes of etching, etching depth equate that with the height of the first order photoresist step etching first order to level V photoresist step makes the thickness of each grade photoresist step all reduce 100nm then; Step 4: the semiconductor chip that etching is exposed, and etching photoresist step make the thickness of each grade step all reduce 100nm; Step 5: repeating step 4 until removing photoresist fully, forms the notch cuttype phase grating.
In the such scheme, on semiconductor chip, also comprise before the spin coating electron beam resist described in the step 1: semiconductor chip is cleaned with acetone, alcohol and water successively, then oven dry.
In the such scheme, described in the step 2 this electron beam resist is carried out photoetching and development, form the 0th grade of the photoresist step that comprise of series of periodic to level V; Comprise: utilize electron beam that this electron beam resist is carried out photoetching, and the dosage of electron beam is periodically to reduce gradually, the width of each dosage equates; As one-period; Constantly repeat, use developing liquid developing then, form the 0th grade of the photoresist step that comprise of series of periodic to the rank such as height of level V.
In the such scheme, said semiconductor chip is a silicon chip, and the electron beam resist of said spin coating on semiconductor chip is the ZEP-520 electron beam resist.
In the such scheme, the 0th grade of semiconductor chip that the photoresist ledge surface exposes of etching described in the step 3 is to adopt the 0th grade of silicon dioxide that the photoresist ledge surface exposes of methenyl choloride etching.
In the such scheme, the first order of etching described in the step 3 to level V photoresist step is to adopt the oxygen ICP etching first order to level V photoresist step.
In the such scheme, the semiconductor chip that etching is exposed described in the step 4 is to adopt methenyl choloride to carry out etching.
In the such scheme, the step of photoresist described in the step 4 is to adopt oxygen ICP etching.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, the method for making of notch cuttype phase grating provided by the invention with respect to common 2n step grating, can be produced the phase-type grating of any step.
2, the method for making of notch cuttype phase grating provided by the invention, manufacture craft is simple, and is with low cost, can make in enormous quantities.
3, the method for making of notch cuttype phase grating provided by the invention has been avoided repeatedly even glue, and repeatedly the complicacy of electron-beam direct writing has been avoided aligning out of true problem, can better form accurate step phase grating arbitrarily.
Description of drawings
Fig. 1 is the synoptic diagram according to embodiment of the invention spin coating one deck electron beam resist on semiconductor chip;
Fig. 2 is the synoptic diagram of the photoresist step that electron beam resist carried out form after the photoetching according to the embodiment of the invention;
Fig. 3 is for accordinging to the synoptic diagram after the embodiment of the invention is used the 0th grade of silicon dioxide that the photoresist ledge surface exposes of methenyl choloride etching;
Fig. 4 uses the 0th grade of silicon dioxide that the photoresist ledge surface exposes of methenyl choloride etching according to the embodiment of the invention, and with the synoptic diagram behind the oxygen ICP etching first order to the level V photoresist step;
Fig. 5 removes the synoptic diagram that photoresist forms the notch cuttype phase grating fully according to the embodiment of the invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The method for making of notch cuttype phase grating provided by the invention may further comprise the steps:
Step 1: spin coating one layer thickness is the electron beam resist of 500nm on semiconductor chip;
Step 2: this electron beam resist is carried out photoetching and development; Form the 0th grade of the photoresist step that comprise of series of periodic to level V, the 0th grade to level V photoresist step with respect to the height of surface of semiconductor chip be followed successively by 0,100nm, 200nm, 300nm, 400nm and 500nm;
Step 3: the 0th grade of semiconductor chip that the photoresist ledge surface exposes of etching, etching depth equate that with the height of the first order photoresist step etching first order to level V photoresist step makes the thickness of each grade photoresist step all reduce 100nm then;
Step 4: the semiconductor chip that etching is exposed, and etching photoresist step make the thickness of each grade step all reduce 100nm;
Step 5: repeating step 4 until removing photoresist fully, forms the notch cuttype phase grating.
Wherein, on semiconductor chip, also comprise before the spin coating electron beam resist described in the step 1: semiconductor chip is cleaned with acetone, alcohol and water successively, then oven dry.
Described in the step 2 this electron beam resist is carried out photoetching and development, form the 0th grade of the photoresist step that comprise of series of periodic, comprising: utilize electron beam that this electron beam resist is carried out photoetching to level V; And the dosage of electron beam is periodically to reduce gradually; The width of each dosage equates, as one-period, constantly repeats; Use developing liquid developing then, form the 0th grade of the photoresist step that comprise of series of periodic to the rank such as height of level V.
Said semiconductor chip is generally silicon chip, and the electron beam resist of said spin coating on semiconductor chip generally adopts the ZEP-520 electron beam resist.
Below be silicon chip with the semiconductor chip, the electron beam resist of spin coating on semiconductor chip is example for the ZEP-520 electron beam resist, the method for making of notch cuttype phase grating provided by the invention is elaborated.This embodiment may further comprise the steps:
Step 1: quartzy silicon chip was cleaned with acetone, alcohol, water, oven dry, spin coating one deck electron beam resist ZEP-520, thickness is 500nm, and is as shown in Figure 1.
Step 2: utilize electron beam to carry out photoetching, and dosage reduces gradually, the width of each dosage equates; As one-period; Constantly repeat, use developing liquid developing then, form the 0th grade of the photoresist step that comprise of series of periodic to level V; As shown in Figure 2, wherein the 0th grade to level V photoresist step with respect to the height of silicon chip surface be followed successively by 0,100nm, 200nm, 300nm, 400nm and 500nm.
Step 3: use the 0th grade of silicon dioxide that the photoresist ledge surface exposes of methenyl choloride etching; Etching depth equates with the height of first order photoresist step; As shown in Figure 3; Use the oxygen ICP etching first order to level V photoresist step then, make the thickness of each grade photoresist step reduce 100nm, promptly the thickness of the first order to level V photoresist step be followed successively by 0,100nm, 200nm, 300nm and 400nm; As shown in Figure 4.
Step 4: the silicon dioxide that uses the methenyl choloride etching to expose, use oxygen ICP etching photoresist step then, make the thickness of each grade step all reduce 100nm.
Step 5: repeating step 4, until removing photoresist fully, form the notch cuttype phase grating, accomplish the making of device, as shown in Figure 5.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the method for making of a notch cuttype phase grating is characterized in that, comprising:
Step 1: spin coating one layer thickness is the electron beam resist of 500nm on semiconductor chip;
Step 2: this electron beam resist is carried out photoetching and development; Form the 0th grade of the photoresist step that comprise of series of periodic to level V, the 0th grade to level V photoresist step with respect to the height of surface of semiconductor chip be followed successively by 0,100nm, 200nm, 300nm, 400nm and 500nm;
Step 3: the 0th grade of semiconductor chip that the photoresist ledge surface exposes of etching, etching depth equate that with the height of the first order photoresist step etching first order to level V photoresist step makes the thickness of each grade photoresist step all reduce 100nm then;
Step 4: the semiconductor chip that etching is exposed, and etching photoresist step make the thickness of each grade step all reduce 100nm;
Step 5: repeating step 4 until removing photoresist fully, forms the notch cuttype phase grating.
2. the method for making of notch cuttype phase grating according to claim 1 is characterized in that, on semiconductor chip, also comprises before the spin coating electron beam resist described in the step 1:
Semiconductor chip is cleaned with acetone, alcohol and water successively, then oven dry.
3. the method for making of notch cuttype phase grating according to claim 1 is characterized in that, described in the step 2 this electron beam resist is carried out photoetching and development, forms the 0th grade of photoresist step to level V that comprise of series of periodic, comprising:
Utilize electron beam that this electron beam resist is carried out photoetching; And the dosage of electron beam is periodically to reduce gradually; The width of each dosage equates, as one-period, constantly repeats; Use developing liquid developing then, form the 0th grade of the photoresist step that comprise of series of periodic to the rank such as height of level V.
4. the method for making of notch cuttype phase grating according to claim 1 is characterized in that, said semiconductor chip is a silicon chip, and the electron beam resist of said spin coating on semiconductor chip is the ZEP-520 electron beam resist.
5. the method for making of notch cuttype phase grating according to claim 4; It is characterized in that; The 0th grade of semiconductor chip that the photoresist ledge surface exposes of etching described in the step 3 is to adopt the 0th grade of silicon dioxide that the photoresist ledge surface exposes of methenyl choloride etching.
6. the method for making of notch cuttype phase grating according to claim 4 is characterized in that, the first order of etching described in the step 3 to level V photoresist step is to adopt the oxygen ICP etching first order to level V photoresist step.
7. the method for making of notch cuttype phase grating according to claim 4 is characterized in that, the semiconductor chip that etching is exposed described in the step 4 is to adopt methenyl choloride to carry out etching.
8. the method for making of notch cuttype phase grating according to claim 4 is characterized in that, the step of photoresist described in the step 4 is to adopt oxygen ICP etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110279270A CN102331594A (en) | 2011-09-20 | 2011-09-20 | Method for manufacturing step-type phase grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110279270A CN102331594A (en) | 2011-09-20 | 2011-09-20 | Method for manufacturing step-type phase grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102331594A true CN102331594A (en) | 2012-01-25 |
Family
ID=45483429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110279270A Pending CN102331594A (en) | 2011-09-20 | 2011-09-20 | Method for manufacturing step-type phase grating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102331594A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108557758A (en) * | 2018-02-08 | 2018-09-21 | 南京大学 | A kind of method of cycle alternation etching homogeneity multistage slope step guiding growth nano-wire array |
| CN111522084A (en) * | 2020-04-22 | 2020-08-11 | 深圳珑璟光电技术有限公司 | Grating structure and near-to-eye display system |
| CN111880254A (en) * | 2020-07-14 | 2020-11-03 | 浙江大学 | Preparation method of grating with continuously-changed diffraction efficiency |
| CN113485075A (en) * | 2021-07-08 | 2021-10-08 | 中国科学技术大学 | Preparation method of wedge-shaped structure in spot-size converter and wedge-shaped structure |
| CN114137797A (en) * | 2020-09-03 | 2022-03-04 | 中国科学院微电子研究所 | Method for manufacturing relation curve of photoresist thickness and critical dimension |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171534A (en) * | 2005-05-02 | 2008-04-30 | 冲电气工业株式会社 | Diffractive optical component making method |
| CN101738662A (en) * | 2008-11-12 | 2010-06-16 | 中国科学院半导体研究所 | Method for preparing hundred nano grade narrow line width holographic grating photoresist pattern with various features |
-
2011
- 2011-09-20 CN CN201110279270A patent/CN102331594A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171534A (en) * | 2005-05-02 | 2008-04-30 | 冲电气工业株式会社 | Diffractive optical component making method |
| CN101738662A (en) * | 2008-11-12 | 2010-06-16 | 中国科学院半导体研究所 | Method for preparing hundred nano grade narrow line width holographic grating photoresist pattern with various features |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108557758A (en) * | 2018-02-08 | 2018-09-21 | 南京大学 | A kind of method of cycle alternation etching homogeneity multistage slope step guiding growth nano-wire array |
| WO2019154385A1 (en) * | 2018-02-08 | 2019-08-15 | 南京大学 | High-density three-dimensional nanowire channel array and fabrication method thereof |
| CN111522084A (en) * | 2020-04-22 | 2020-08-11 | 深圳珑璟光电技术有限公司 | Grating structure and near-to-eye display system |
| CN111880254A (en) * | 2020-07-14 | 2020-11-03 | 浙江大学 | Preparation method of grating with continuously-changed diffraction efficiency |
| CN111880254B (en) * | 2020-07-14 | 2021-05-14 | 浙江大学 | Preparation method of grating with continuously-changed diffraction efficiency |
| CN114137797A (en) * | 2020-09-03 | 2022-03-04 | 中国科学院微电子研究所 | Method for manufacturing relation curve of photoresist thickness and critical dimension |
| CN113485075A (en) * | 2021-07-08 | 2021-10-08 | 中国科学技术大学 | Preparation method of wedge-shaped structure in spot-size converter and wedge-shaped structure |
| CN113485075B (en) * | 2021-07-08 | 2022-09-30 | 中国科学技术大学 | Preparation method of wedge-shaped structure in spot-size converter and wedge-shaped structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102331594A (en) | Method for manufacturing step-type phase grating | |
| US9123649B1 (en) | Fit-to-pitch overlay measurement targets | |
| CN103065943A (en) | Critical size compensating method of deep groove etching process | |
| US10236320B2 (en) | Fractal-edge thin film and method of manufacture | |
| JP2014187331A (en) | Mold and method of manufacturing the same | |
| CN101201544B (en) | Semiconductor photolithography method | |
| CN102830588A (en) | Method for fabricating phase-shift photomask | |
| KR102312241B1 (en) | Process compatible segmented targets and design methods | |
| CN102645855A (en) | Enhanced global alignment (EGA) mark and photolithograph pattern | |
| Vaid et al. | Hybrid metrology solution for 1X-node technology | |
| CN109581830A (en) | A kind of method for stripping metal based on laser hot-die photoetching | |
| CN104216233A (en) | Exposure method | |
| CN103839769B (en) | The method forming pattern | |
| CN103345117B (en) | Mask and liquid crystal display manufacturing method | |
| CN205609514U (en) | Thin film transistor base plate and alignment mark | |
| CN105720212A (en) | Method of manufacturing mask for deposition | |
| CN103499902B (en) | A kind of range regulate and control method of substrate and device | |
| CN202093317U (en) | High-precision alignment mark structure based on machine vision alignment | |
| CN102097303B (en) | Photolithographic process for thick metal | |
| CN102789133B (en) | After develop inspection method | |
| CN107306011B (en) | Side coupling grating of laser, preparation method thereof and laser comprising side coupling grating | |
| CN102608864A (en) | Method for manufacturing nanoscale component with large height-width ratio | |
| CN104465326A (en) | Method for preparing non-damaged graphene nanometer device through Stencil photoetching | |
| CN103855075B (en) | The acquisition method of etching condition | |
| CN105607308A (en) | Measurement scale, manufacturing method and using method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120125 |