CN102324907B - Terahertz wave adjustable narrow band filter based on silicon-based photonic crystal structure - Google Patents
Terahertz wave adjustable narrow band filter based on silicon-based photonic crystal structure Download PDFInfo
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- CN102324907B CN102324907B CN201110187816.6A CN201110187816A CN102324907B CN 102324907 B CN102324907 B CN 102324907B CN 201110187816 A CN201110187816 A CN 201110187816A CN 102324907 B CN102324907 B CN 102324907B
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Abstract
The invention discloses a terahertz wave adjustable narrow band filter based on a silicon-based photonic crystal structure. The filter comprises a filter metal shell, uniform high-resistance silicon wafers, annular gaskets, a spring piece, a driving motor, a lead, a motor driving controller, a translation table and a hollow push post, wherein one end of the filter metal shell is provided with a vertical edgefold inwardly; a plurality of groups of uniform high-resistance silicon wafers and annular gaskets are uniformly arranged at intervals in the filter metal shell, then the spring piece is arranged in the filter metal shell, and the same quantity of groups of uniform high-resistance silicon wafers and annular gaskets are arranged at intervals in the filter metal shell again; the hollow push post is sleeved in the other end of the filter metal shell; the outer end of the hollow push post is fixed on the translation table; a translation table base is fixed with the metal shell; the translation table is driven to shift by using the driving motor; and the motor driving controller is used for controlling the driving motor through the lead. The terahertz wave adjustable narrow band filter has the advantages of simple structure, low cost, extremely narrow filtering bandwidth, small loss, wide frequency adjustable range, high modulating speed and high performance.
Description
Technical field
The present invention relates to THz wave technology and wireless communication devices field, relate in particular to a kind of THz wave adjustable narrow-band filter based on silicon based photon crystal structure.
Background technology
Terahertz (THz) ripple is connected microwave and infrared band in frequency range, it has low, can the penetrability most nonpolar molecule materials of photon energy, spatial resolution is high, be with roomyly, therefore, in detection, safety, imaging and communication aspects, there is good application prospect.Although in recent years, THz wave technology gets a larger development, but because THz wave frequency is high with respect to microwave, conventional microwave electronic device cannot be applied to terahertz wave band, and its relative optical wavelength is long, make the most of optics in optical field be difficult to equally application, and most of optical material is excessive to the absorption of THz wave.Therefore, THz wave field lacks at present as cheap high performance devices such as modulator, filter, amplifiers.
The scheme that realizes at present THz wave tunable filter mainly contains: in multilayer dielectric film photon crystal structure, introduce the variable dielectric layers of refraction such as ferroelectric wafer, liquid crystal, by control device temperature, that electrode voltage is realized frequency filtering is adjustable, this class filter has narrower filtering bandwidth and adjustable frequency scope in a big way, but its structural material has larger absorption to THz wave, and the mechanism that realizes modulation is complicated, modulation difficulty; Another kind is to utilize by resonance characteristics light-operated, automatically controlled or temperature control change metamaterial structure to realize tunable filter, but what this class filter often formed is band stop filter, rather than more conventional band pass filter, device preparation technology requires harshness and device to have larger absorption to THz wave.High Resistivity Si and dry air are minimum to the absorption of THz wave, we have proposed to introduce the air defect layer that spring leaf forms in the 1-D photon crystal structure of high resistant silicon chip and air layer formation, control defect thickness realize high-performance adjustable narrow-band terahertz filter easy to adjust by precision micro-displacement device.Its filter Q value can reach more than 500, and halfwidth frequency band can be lower than 500MHz, and centre frequency adjustable extent reaches tens GHz to hundreds of GHz.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of simple in structure, preparation easily, the THz wave adjustable narrow-band filter based on silicon based photon crystal structure of the low-cost and high-performance practicality of excellent performance.
THz wave adjustable narrow-band filter based on silicon based photon crystal structure comprises filter metal shell, even high resistant silicon chip, annular gasket, spring leaf, drive motors, wire, motor drive controller, translation stage, the hollow post that pushes away; Filter metal shell one end is inwardly provided with vertical flanging; The even high resistant silicon chip of many groups and annular gaskets are put in interval in filter metal shell, then put into spring leaf, then interval is put into and high resistant silicon chip and the annular gasket of identical group of number before; Then at the filter metal shell other end, be inserted in the hollow post that pushes away; The hollow outer end that pushes away post fixing with translation stage on, then translation stage base and metal shell are fixed; Translation stage promotes displacement by drive motors; Motor drive controller is controlled drive motors by wire.
Its thickness separately of described each sheet high resistant silicon chip and annular gasket is identical respectively.The 3-5 of placement respectively group high resistant silicon chip and the annular gasket on described spring leaf both sides, single group high resistant silicon chip and annular gasket altogether length between 0.20mm ~ 2.0mm scope.Described spring leaf adjustable extent is 0.300mm ~ 1.500mm.Its operating frequency range of described narrow band filter is at 100GHz ~ 10THz.
1-D photon crystal structure of the present invention can utilize the business common high resistant silicon chip of commercially available many groups and annular gasket to be prepared from, and its cost is low, preparation is easy, absorption loss is little; By selecting the ratio of suitable air layer and silicon wafer thickness, can the very large adjustable range of operating frequency; Owing to only utilizing chip architecture of the spring to purchase into air defect, and accurately control defect layer thickness with the hollow simple electromechanical component such as post, translation stage, drive motors that pushes away, make filter cost low, and it is adjustable fast in larger frequency range, to realize precision.
Accompanying drawing explanation
Fig. 1 is the structural representation of the THz wave adjustable narrow-band filter based on silicon based photon crystal structure;
When being the THz wave adjustable narrow-band filter embodiment 1 different defect thickness based on silicon based photon crystal structure, Fig. 2 sees through spectrogram;
Fig. 3 is THz wave adjustable narrow-band filter embodiment 2 filter center frequency and the air defect thickness relationship figure based on silicon based photon crystal structure.
Embodiment
As shown in Figure 1, a kind of THz wave adjustable narrow-band filter based on silicon based photon crystal structure comprises filter metal shell 1, even high resistant silicon chip 2, annular gasket 3, spring leaf 4, automatically controlled micro positioner 5; Filter metal shell 1 one end is inwardly provided with vertical flanging; The even high resistant silicon chip 2 of many groups and annular gaskets 3 are put in the interior interval of filter metal shell 1, then put into spring leaf 4, then interval is put into and high resistant silicon chip 2 and the annular gasket 3 of identical group of number before; At filter metal shell 1 other end, be inserted in the hollow post 9 that pushes away again, and translation stage 8 is fixed on in the hollow outer end that pushes away post 9; Translation stage 8 bases and metal shell 1 are fixing, and translation stage 8 drives displacement by the drive motors 5 being connected by wire 6 with motor drive controller 7.
The thickness of described even high resistant silicon chip 2 annular gaskets 3 is identical.The 3-5 of placement respectively group high resistant silicon chip 2 and the annular gasket 3 on described spring leaf 4 both sides.Described spring leaf 4 adjustable extents are 0.300mm ~ 1.500mm.Its operating frequency range of described narrow band filter is at 100GHz ~ 10THz.Described drive motors 5 is piezoelectric ceramic motor, Driven by Ultrasonic Motors or stepping motor.
Embodiment 1: with reference to Fig. 1 schematic diagram, select the high resistant silicon chip (resistivity be greater than 1000 Europe/centimetre) of 500 μ m ± 10 μ m thickness by scribing machine, to be divided into the square piece of 2.2mm * 2.2mm; Ring segment utilizes the copper sheet machining of 0.6mm ± 0.2mm to form, and endoporus is 1.9mm * 1.9mm; Spring leaf is that spring steel plate is processed into endoporus is 1.9 mm * 1.9mm, the ring segment of outside dimension 2.2mm * 2.2mm (not stressed length 1.2mm, stressed minimum length is 0.6).6 square high resistant silicon chips and annular copper sheet and a slice spring leaf are alternately put into metal shell (inside dimension 2.3mm * 2.3mm * 20mm) and form 1-D photon crystal filter, put into aluminium square tube and push away post (2.2mm * 2.2mm * 40mm), push away post outer end and be screwed in by stepping motor driving translation stage, and metal tube and translation stage base are fixed; By motor drive controller, accurately control the thickness of defect layer, just obtain adjustable narrow-band THz wave filter.There are a plurality of working bands in this filter, groundwork frequency band is 295GHz-330GHz, 360GHz-405GHz, 440GHz-465GHz, 870GHz-915GHz etc., in 295GHz-330GHz working band, survey maximum Q value and be about 1550, filter center frequency transmitance is 0.4 left and right, can accurately control by motor drive controller the thickness of defect layer, realize the adjusting of filter center frequency, as shown in Figure 2.The annular copper sheet that in figure, the secondary peak of transmitance is prepared due to us and the spring ring segment uniformity be not high enough to be caused, and selects the sheet metal that error is little can restrain secondary peak.
Embodiment 2: the high resistant silicon chip (resistivity be greater than 1000 Europe/centimetre) of selecting 300 μ m ± 5 μ m thickness, by etching technics, process and there is uniform square groove (groove depth approximately 200 μ m), take square groove as annular gasket 3, the silicon that bottom is stayed is high resistant silicon chip 2 (2.2mm * 2.2mm), forms high resistant silicon chip and annular gasket composite construction silicon chip.With six composite construction silicon chips and spring leaf, form tunable optic filter, its groundwork frequency band is: 200GHz-360GHz, 520GHz-630GHz, 1THz-1.2THz, 1.85THz-2.02THz etc., take 200GHz-360Ghz frequency band as example, filter center frequency transmitance is greater than 0.75, filtering bandwidth is about 300MHz, and Q value is about the relation that 960, Fig. 5 is filter center frequency and defect thickness.
Claims (5)
1. the THz wave adjustable narrow-band filter based on silicon based photon crystal structure, is characterized in that: comprise filter metal shell (1), even high resistant silicon chip (2), annular gasket (3), spring leaf (4), drive motors (5), wire (6), motor drive controller (7), translation stage (8), the hollow post (9) that pushes away; Filter metal shell (1) one end is inwardly provided with vertical flanging; Many group even high resistant silicon chips (2) and annular gaskets (3) are put in the interior interval of filter metal shell (1), then put into spring leaf (4), then interval is put into and high resistant silicon chip (2) and the annular gasket (3) of identical group of number before; At filter metal shell (1) other end, be inserted in the hollow post (9) that pushes away, then translation stage (8) is fixed on in the hollow outer end that pushes away post (9); Translation stage (8) base and metal shell (1) are fixing, and translation stage (8) drives displacement by the drive motors (5) being connected by wire (6) with motor drive controller (7).
2. by a kind of THz wave adjustable narrow-band filter based on silicon based photon crystal structure claimed in claim 1, it is characterized in that its thickness separately of described high resistant silicon chip (2) and annular gasket (3) is identical respectively.
3. by a kind of THz wave adjustable narrow-band filter based on silicon based photon crystal structure claimed in claim 1, it is characterized in that described spring leaf (4) both sides place respectively 3-5 group high resistant silicon chip (2) and annular gasket (3).
4. by a kind of THz wave adjustable narrow-band filter based on silicon based photon crystal structure claimed in claim 1, it is characterized in that its operating frequency range of described narrow band filter is at 100GHz ~ 10THz.
5. by a kind of THz wave adjustable narrow-band filter based on silicon based photon crystal structure claimed in claim 1, it is characterized in that described drive motors (5) is piezoelectric ceramic motor, ultrasound electric machine or stepping motor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110187816.6A CN102324907B (en) | 2011-07-06 | 2011-07-06 | Terahertz wave adjustable narrow band filter based on silicon-based photonic crystal structure |
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| CN103107394B (en) * | 2012-12-27 | 2015-09-02 | 北京理工大学 | A kind of based on MEMS technology THz wave band EMXT cavity body filter |
| CN103091777B (en) * | 2013-02-19 | 2014-09-24 | 上海理工大学 | Multiple-filter wave tunable band-pass filter and adjustment method |
| CN103715478B (en) * | 2013-12-26 | 2016-03-02 | 合肥知常光电科技有限公司 | A kind of tunable THz wave filter and filtering method thereof |
| US9935604B2 (en) * | 2015-07-06 | 2018-04-03 | Xilinx, Inc. | Variable bandwidth filtering |
| CN105717675B (en) * | 2016-04-21 | 2018-09-11 | 哈尔滨工业大学 | The preparation method of terahertz wave band electrically-controlled liquid crystal phase-shifter based on polymeric transparent electrode |
| CN106772798B (en) * | 2017-01-19 | 2023-03-10 | 桂林电子科技大学 | Reflection-type narrow band filter based on waveguide Bragg grating |
| CN108333803B (en) * | 2018-01-23 | 2020-10-20 | 中国计量大学 | Adjustable terahertz metamaterial absorber |
| CN111162354B (en) * | 2020-01-16 | 2024-04-05 | 桂林电子科技大学 | Terahertz band-pass/band-stop filter with electric control conversion function |
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| CN101534103A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海微系统与信息技术研究所 | Radio frequency filter capable of single chip integration and manufacture method thereof |
| CN102012573A (en) * | 2010-11-25 | 2011-04-13 | 哈尔滨工程大学 | Liquid crystal photon crystal fiber tunable narrowband filter and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101534103A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海微系统与信息技术研究所 | Radio frequency filter capable of single chip integration and manufacture method thereof |
| CN102012573A (en) * | 2010-11-25 | 2011-04-13 | 哈尔滨工程大学 | Liquid crystal photon crystal fiber tunable narrowband filter and manufacturing method thereof |
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