CN102321833A - Al-Ti-Si alloy target material and preparation method thereof - Google Patents
Al-Ti-Si alloy target material and preparation method thereof Download PDFInfo
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- CN102321833A CN102321833A CN 201110298811 CN201110298811A CN102321833A CN 102321833 A CN102321833 A CN 102321833A CN 201110298811 CN201110298811 CN 201110298811 CN 201110298811 A CN201110298811 A CN 201110298811A CN 102321833 A CN102321833 A CN 102321833A
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Abstract
The invention relates to an Al-Ti-Si alloy target and a preparation method thereof. The Al-Ti-Si alloy target is prepared from the following raw materials in percent by weight: 5-90% of aluminum, 5-90% of titanium and 1-30% of silicon. The invention also comprises a hot-pressing and sintering preparation method of the Al-Ti-Si alloy target. In the Al-Ti-Si alloy target and the hot-pressing and sintering preparation method thereof which are provided by the invention, components of the alloy are uniform, relative density of the alloy target is high, technological process is short, and production cost is low, thus the alloy and the preparation method thereof are beneficial to popularization and application.
Description
Technical field
The present invention relates to a kind of target that the surface-treated plated film uses and preparation method thereof that material is carried out, especially relate to a kind of aluminium titanium silicon target and preparation method thereof.
Background technology
It is to improve the important method of material over-all properties that material is carried out surface-treated; Various metals, alloy, inorganic materials, macromolecular material through surface coating, can improve surface hardness, wear resistance, erosion resistance; And can change the surface color of material, promote the decorate properties of material.Target is to carry out the employed critical material of material vacuum sputtering coating, and making the ion beam strikes target material surface through photoglow is the basic skills of material surface plated film.Along with the development of surface film technology, target is also brought in constant renewal in.
In the surface-treated of metal worker, moulding stock, usually need plate one deck TiN, TiCN, TiAl (CN) rete on the surface of various tool and mould, come the wear resisting property of raising instrument, mould.At present, develop pure titanium or titanium-aluminium alloy target material and prepared this rete.Research shows, uses TiN, TiCN, the TiAl retes such as (CN) of pure titanium or titanium-aluminium alloy target material preparation, and the surface hardness that can reach at worker, die surface is 2400-2800HV, and frictional coefficient is 0.50-0.55, and maximum operation (service) temperature is 400-600 ℃.And in practical application, the performance of worker, mould being had higher requirement, existing pure titanium or titanium-aluminium alloy target material can't satisfy the request for utilization of worker, die surface plated film rete.
Summary of the invention
The technical problem that the present invention will solve is, overcomes the deficiency of prior art, provides a kind of technical process short, and production cost is low, target matter measured aluminium titanium silicon target and hot pressed sintering preparation method thereof.
The present invention solve the technical problem the technical scheme that is adopted:
The present invention's aluminium titanium silicon target is processed by the raw material of following mass percent: aluminium powder 5%-90%, titanium valve 5%-90%, silica flour 1%-30%.
The preferred 10-100 μ of said aluminium powder median size m;
The preferred 10-300 μ of said titanium valve median size m;
The preferred 10-300 μ of said silica flour median size m;
Said aluminium powder, titanium valve and silica flour purity are preferred more than 99%.
The preparation method of the present invention's aluminium titanium silicon target may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 0.5-6 hour;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 10-30MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 450 ℃-500 ℃ from room temperature, be incubated 5-10 minute, the pressure of thermocompressor pressure head remains on 5-10MPa; Continue to heat up then, to 800 ℃-1500 ℃, the thermocompressor ram pressures is elevated to 15-100MPa simultaneously, and heat-insulation pressure keeping>=10 minute begin cooling then, reduce the thermocompressor ram pressures simultaneously to 5-10MPa, behind cool to room temperature, and removal pressure fully;
(4) behind the cool to room temperature, remove vacuum, the demoulding obtains the aluminium titanium silicon ternary alloy target blank of sinter molding, then through lathe Vehicle Processing or grinding machine, obtains the aluminium titanium silicon ternary alloy target that size, smooth finish adhere to specification.
Wherein, step (1) in powder mixing process, should charge into argon gas in mixing machine, to reduce the oxidation of each raw material powder in the batch mixing process.
Each set of dispense ratio of aluminium titanium silicon ternary alloy target of the present invention can be regulated and control according to the performance requriements of plated film rete in the larger context.
Use the rete of aluminium-titanium-silicon ternary alloy target plated film acquisition of the present invention; The hardness of upper layer can reach 3000HV even more than the 3500HV; The rete use temperature can reach more than 800-900 ℃ even 1000 ℃, and the frictional coefficient of upper layer can be reduced to below 0.6.
And aluminium-titanium of the present invention-silicon ternary alloy target preparation technology flow process is brief, and production cost is low, is beneficial to promote the use of.
Description of drawings
Fig. 1 is the outward appearance photo of the aluminium titanium silicon ternary alloy target of embodiment 1 acquisition;
Fig. 2 is the outward appearance photo of the aluminium titanium silicon ternary alloy target of embodiment 2 acquisitions;
Fig. 3 is the microstructure picture under the aluminium titanium silicon ternary alloy target sem that obtains of embodiment 3;
Fig. 4 is the microstructure picture under the aluminium titanium silicon ternary alloy target sem that obtains of embodiment 4.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further explain.
Embodiment 1
The present invention's aluminium titanium silicon target is processed by the raw material of following mass percent: aluminium 9%, titanium 90%, silicon 1%;
Said aluminium powder median size is 10 μ m;
Said titanium valve median size is 10 μ m;
Said silica flour median size is 10 μ m;
Said aluminium powder purity is 99.6%, and titanium valve purity is 99.5%, and silica flour purity is 99.9%.
The preparation method of the aluminium titanium silicon target of present embodiment may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 0.5 hour, in mixing machine, charge into argon gas in the mixing process, reduce the oxidation in the powder batch mixing process;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 10MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 500 ℃ from room temperature, be incubated 10 minutes, this moment, the thermocompressor ram pressures remained on 5MPa; Continue then to heat up, to 1500 ℃, the thermocompressor ram pressures is elevated to 100MPa simultaneously, and heat-insulation pressure keeping 10 minutes begins cooling then, reduces thermocompressor ram pressures pressure simultaneously to 10MPa, behind cool to room temperature, and complete removal pressure;
(4) behind the cool to room temperature, remove vacuum, the demoulding, the aluminium titanium silicon ternary alloy target blank of acquisition sinter molding obtains aluminium titanium silicon target through grinding machine then.
Present embodiment aluminium titanium silicon target material outward appearance is as shown in Figure 1.
Use present embodiment product plated film on Rapid Steel Tool, coated surface layer hardness reaches 3556HV, and the frictional coefficient of upper layer is 0.52, and rete is through 300 hours non-oxidations of 620 ℃ of tests, peeling phenomenon.
Embodiment 2
The present invention's aluminium titanium silicon target is processed by the raw material of following mass percent: aluminium 90%, titanium 5%, silicon 5%;
Said aluminium powder median size is 25 μ m;
Said titanium valve median size is 200 μ m;
Said silica flour median size is 200 μ m;
Said aluminium powder purity is 99.4%, and titanium valve purity is 99.2%, and silica flour purity is 99.3%.
The preparation method of the present invention's aluminium titanium silicon target may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 6 hours, in mixing machine, charge into argon gas in the mixing process, reduce the oxidation in the powder batch mixing process;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 30MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 450 ℃ from room temperature, be incubated 5 minutes, this moment, the thermocompressor ram pressures remained on 5MPa; Continue then to heat up, to 800 ℃, the thermocompressor ram pressures is elevated to 50MPa simultaneously, and heat-insulation pressure keeping 10 minutes begins cooling then, reduces pressure simultaneously to 10MPa, behind cool to room temperature, and complete removal pressure;
(4) behind the cool to room temperature, remove vacuum, the demoulding, the aluminium titanium silicon ternary alloy target blank of acquisition sinter molding obtains aluminium titanium silicon target through grinding machine then.
Present embodiment aluminium titanium silicon target material outward appearance is as shown in Figure 2.
Use present embodiment product plated film on Rapid Steel Tool, coated surface layer hardness reaches 3687HV, and the frictional coefficient of upper layer is 0.53, and rete is through 300 hours non-oxidations of 700 ℃ of tests, peeling phenomenon.
Embodiment 3
The present invention's aluminium titanium silicon target is processed by the raw material of following mass percent: aluminium 67%, titanium 30%, silicon 3%;
Said aluminium powder median size is 10 μ m;
Said titanium valve median size is 100 μ m;
Said silica flour median size is 100 μ m;
Said aluminium powder purity is 99.5%, and titanium valve purity is 99.5%, and silica flour purity is 99.5%.
The preparation method of the aluminium titanium silicon target of present embodiment may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 3 hours, in mixing machine, charge into argon gas in the mixing process, reduce the oxidation in the powder batch mixing process;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 20MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 475 ℃ from room temperature, be incubated 8 minutes, this moment, the thermocompressor ram pressures remained on 10MPa; Continue then to heat up, to 1000 ℃, the thermocompressor ram pressures is elevated to 50MPa simultaneously, and heat-insulation pressure keeping 10 minutes begins cooling then, reduces pressure simultaneously to 10MPa, behind cool to room temperature, and complete removal pressure;
(4) behind the cool to room temperature, remove vacuum, the demoulding, the aluminium titanium silicon ternary alloy target blank of acquisition sinter molding obtains aluminium titanium silicon target through the lathe Vehicle Processing then.
Microstructure picture under the present embodiment aluminium titanium silicon target material sem is as shown in Figure 3.
Use present embodiment product plated film on Rapid Steel Tool, coated surface layer hardness reaches 3983HV, and the frictional coefficient of upper layer is 0.57, and rete is through 300 hours non-oxidations of 900 ℃ of tests, peeling phenomenon.
Embodiment 4
The present invention's aluminium titanium silicon target is processed by the raw material of following mass percent: aluminium 45%, titanium 25%, silicon 30%;
Said aluminium powder median size is 50 μ m;
Said titanium valve median size is 300 μ m;
Said silica flour median size is 300 μ m;
Said aluminium powder purity is 99.5%, and titanium valve purity is 99.5%, and silica flour purity is 99.5%.
The preparation method of the present invention's aluminium titanium silicon target may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 1 hour, can in mixing machine, charge into argon gas in the mixing process, reduce the oxidation in the powder batch mixing process;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 20MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 500 ℃ from room temperature, be incubated 10 minutes, this moment, the thermocompressor ram pressures remained on 10MPa; Continue then to heat up, to 1250 ℃, the thermocompressor ram pressures is elevated to 100MPa simultaneously, and heat-insulation pressure keeping 10 minutes begins cooling then, reduces pressure simultaneously to 10MPa, behind cool to room temperature, and complete removal pressure;
(4) behind the cool to room temperature, remove vacuum, the demoulding, the aluminium titanium silicon ternary alloy target blank of acquisition sinter molding obtains aluminium titanium silicon target through the lathe Vehicle Processing then.
Microstructure picture under the present embodiment aluminium titanium silicon target material sem is as shown in Figure 4.
Use present embodiment product plated film on Rapid Steel Tool, coated surface layer hardness reaches 3879HV, and the frictional coefficient of upper layer is 0.56, and rete is through 300 hours non-oxidations of 750 ℃ of tests, peeling phenomenon.
Embodiment 5
The present invention's aluminium titanium silicon target is processed by the raw material of following mass percent: aluminium 5%, titanium 70%, silicon 25%;
Said aluminium powder median size is 20 μ m;
Said titanium valve median size is 150 μ m;
Said silica flour median size is 100 μ m;
Said aluminium powder purity is 99.7%, and titanium valve purity is 99.2%, and silica flour purity is 99.9%.
The preparation method of the present invention's aluminium titanium silicon target may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 1.5 hours, in mixing machine, charge into argon gas in the mixing process, reduce the oxidation in the powder batch mixing process;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 30MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 460 ℃ from room temperature, be incubated 8 minutes, this moment, the thermocompressor ram pressures remained on 10MPa; Continue then to heat up, to 1450 ℃, the thermocompressor ram pressures is elevated to 50MPa, heat-insulation pressure keeping 15 minutes simultaneously; Begin cooling then, reduce pressure simultaneously to 10MPa, behind cool to room temperature, complete removal pressure;
(4) behind the cool to room temperature, remove vacuum, the demoulding, the aluminium titanium silicon ternary alloy target blank of acquisition sinter molding obtains aluminium titanium silicon target through grinding machine then.
Use present embodiment product plated film on Rapid Steel Tool, coated surface layer hardness reaches 3774HV, and the frictional coefficient of upper layer is 0.57, and rete is through 300 hours non-oxidations of 800 ℃ of tests, peeling phenomenon.
Claims (4)
1. an aluminium titanium silicon target is characterized in that, is processed by the raw material of following mass percent: aluminium powder 5%-90%, titanium valve 5%-90%, silica flour 1%-30%.
2. aluminium titanium silicon target according to claim 1 is characterized in that, said aluminium powder median size is 10-100 μ m; Said titanium valve median size is 10-300 μ m; Said silica flour median size is 10-300 μ m; Said aluminium powder, titanium valve and silica flour purity are more than 99%.
3. the preparation method of an aluminium titanium silicon target according to claim 1 or claim 2 is characterized in that, may further comprise the steps:
(1) takes by weighing aluminium powder, titanium valve, silica flour, in the three-dimensional blender machine, mixed 0.5-6 hour;
(2) aluminium that mixes, titanium, silicon mixed powder are contained in the mould of sintering; Carry out precompressed then at normal temperatures, the precompressed snap-in force is 10-30MPa, compresses back fixed mould bolt; Guarantee except that the pressure head upper and lower to movable, other directions are all fixed and can't be moved;
(3) mould is put into the vacuum hotpressing machine, the upper and lower pressure head of thermocompressor is aimed at the upper and lower pressure head of mould, vacuumizes, and vacuum tightness arrives 6.7 * 10
-1Begin behind the Pa to heat up, when sintering temperature is warmed up to 450 ℃-500 ℃ from room temperature, be incubated 5-10 minute, the pressure of thermocompressor pressure head remains on 5-10MPa; Continue to heat up then, to 800 ℃-1500 ℃, the thermocompressor ram pressures is elevated to 15-100MPa simultaneously, and heat-insulation pressure keeping>=10 minute begin cooling then, reduce the thermocompressor ram pressures simultaneously to 5-10MPa, behind cool to room temperature, and removal pressure fully;
(4) behind the cool to room temperature, remove vacuum, the demoulding obtains the aluminium titanium silicon ternary alloy target blank of sinter molding, then through lathe Vehicle Processing or grinding machine, obtains the aluminium titanium silicon target that size, smooth finish adhere to specification.
4. the hot pressed sintering preparation method of aluminium titanium silicon target according to claim 3 is characterized in that, step (1) in the powder mixing process, charges into argon gas in mixing machine.
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| CN102699325A (en) * | 2012-06-20 | 2012-10-03 | 江苏美特林科特殊合金有限公司 | Preparing method for Ti-Si alloy target materials |
| CN103056368A (en) * | 2012-11-28 | 2013-04-24 | 厦门虹鹭钨钼工业有限公司 | Preparation method of tungsten silicon alloy target materials |
| CN103898358A (en) * | 2012-12-27 | 2014-07-02 | 北京有色金属研究总院 | Titanium-aluminum-silicon alloy coating material and preparation method thereof |
| CN104416157A (en) * | 2013-09-11 | 2015-03-18 | 安泰科技股份有限公司 | Preparation method for titanium, aluminum and silicon alloy target |
| CN104878244A (en) * | 2014-02-27 | 2015-09-02 | 北京有色金属研究总院 | Titanium-aluminum-magnesium alloy target material and preparation method thereof |
| CN104928539A (en) * | 2015-05-15 | 2015-09-23 | 上海柯瑞冶金炉料有限公司 | Vanadium-aluminium-silicon ternary alloy target material and preparation method thereof |
| CN105478756A (en) * | 2014-09-17 | 2016-04-13 | 宁波江丰电子材料股份有限公司 | Ti-A1 alloy forming method |
| CN105970030A (en) * | 2016-07-04 | 2016-09-28 | 江阴恩特莱特镀膜科技有限公司 | Alloy for being sprayed onto bottom coating of silicon-aluminum target material and preparation method of alloy |
| CN106835033A (en) * | 2016-12-21 | 2017-06-13 | 包头稀土研究院 | The manufacture method of high Mn content alumal target |
| CN108004513A (en) * | 2016-10-31 | 2018-05-08 | 烟台南山学院 | A kind of aluminium base molybdenum disulfide target that the high lubricant film layer of solid-state is obtained in metal material surface and preparation method thereof |
| CN108018463A (en) * | 2016-10-31 | 2018-05-11 | 烟台南山学院 | A kind of aluminium titanium tungsten ternary alloy three-partalloy target that high-temperaure coating is obtained in metal material surface plated film and preparation method thereof |
| CN111962032A (en) * | 2020-08-12 | 2020-11-20 | 宁波江丰电子材料股份有限公司 | Preparation method of Ti-Al alloy target |
| CN112225565A (en) * | 2020-10-14 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | Preparation method of tungsten-silicon target blank |
| CN112375924A (en) * | 2020-11-10 | 2021-02-19 | 将乐三晶新材料有限公司 | Process equipment system for industrially producing silicon-aluminum-titanium alloy |
| CN112779506A (en) * | 2019-11-08 | 2021-05-11 | 有研工程技术研究院有限公司 | Titanium-aluminum-magnesium-silicon alloy target material and preparation method thereof |
| CN114427081A (en) * | 2022-01-26 | 2022-05-03 | 宁波江丰电子材料股份有限公司 | Preparation method of ultrahigh-purity aluminum-silicon-titanium sputtering target alloy |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1777690A (en) * | 2003-03-28 | 2006-05-24 | Ppg工业俄亥俄公司 | Substrates coated with mixtures of titanium and aluminum materials,methods for making the substrates,and cathode targets of titanium and aluminum metal |
| CN101524754A (en) * | 2009-04-17 | 2009-09-09 | 中南大学 | Rapid thermal pressed sintering molding process for titanium-aluminum alloy targets |
-
2011
- 2011-09-29 CN CN 201110298811 patent/CN102321833A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1777690A (en) * | 2003-03-28 | 2006-05-24 | Ppg工业俄亥俄公司 | Substrates coated with mixtures of titanium and aluminum materials,methods for making the substrates,and cathode targets of titanium and aluminum metal |
| CN101524754A (en) * | 2009-04-17 | 2009-09-09 | 中南大学 | Rapid thermal pressed sintering molding process for titanium-aluminum alloy targets |
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| CN102699325A (en) * | 2012-06-20 | 2012-10-03 | 江苏美特林科特殊合金有限公司 | Preparing method for Ti-Si alloy target materials |
| CN103056368A (en) * | 2012-11-28 | 2013-04-24 | 厦门虹鹭钨钼工业有限公司 | Preparation method of tungsten silicon alloy target materials |
| CN103898358A (en) * | 2012-12-27 | 2014-07-02 | 北京有色金属研究总院 | Titanium-aluminum-silicon alloy coating material and preparation method thereof |
| CN104416157A (en) * | 2013-09-11 | 2015-03-18 | 安泰科技股份有限公司 | Preparation method for titanium, aluminum and silicon alloy target |
| CN104416157B (en) * | 2013-09-11 | 2019-03-19 | 安泰科技股份有限公司 | The preparation method of titanium aluminum silicon alloy target |
| CN104878244B (en) * | 2014-02-27 | 2017-11-10 | 北京有色金属研究总院 | A kind of titanium almag target and preparation method thereof |
| CN104878244A (en) * | 2014-02-27 | 2015-09-02 | 北京有色金属研究总院 | Titanium-aluminum-magnesium alloy target material and preparation method thereof |
| CN105478756A (en) * | 2014-09-17 | 2016-04-13 | 宁波江丰电子材料股份有限公司 | Ti-A1 alloy forming method |
| CN104928539A (en) * | 2015-05-15 | 2015-09-23 | 上海柯瑞冶金炉料有限公司 | Vanadium-aluminium-silicon ternary alloy target material and preparation method thereof |
| CN105970030B (en) * | 2016-07-04 | 2018-03-13 | 江阴恩特莱特镀膜科技有限公司 | It is a kind of to be used to spray alloy of sial target prime coat and preparation method thereof |
| CN105970030A (en) * | 2016-07-04 | 2016-09-28 | 江阴恩特莱特镀膜科技有限公司 | Alloy for being sprayed onto bottom coating of silicon-aluminum target material and preparation method of alloy |
| CN108004513A (en) * | 2016-10-31 | 2018-05-08 | 烟台南山学院 | A kind of aluminium base molybdenum disulfide target that the high lubricant film layer of solid-state is obtained in metal material surface and preparation method thereof |
| CN108018463A (en) * | 2016-10-31 | 2018-05-11 | 烟台南山学院 | A kind of aluminium titanium tungsten ternary alloy three-partalloy target that high-temperaure coating is obtained in metal material surface plated film and preparation method thereof |
| CN108004513B (en) * | 2016-10-31 | 2020-01-03 | 烟台南山学院 | Aluminum-based molybdenum disulfide target material for obtaining solid high-lubrication film layer on surface of metal material and preparation method thereof |
| CN106835033A (en) * | 2016-12-21 | 2017-06-13 | 包头稀土研究院 | The manufacture method of high Mn content alumal target |
| CN112779506A (en) * | 2019-11-08 | 2021-05-11 | 有研工程技术研究院有限公司 | Titanium-aluminum-magnesium-silicon alloy target material and preparation method thereof |
| CN111962032A (en) * | 2020-08-12 | 2020-11-20 | 宁波江丰电子材料股份有限公司 | Preparation method of Ti-Al alloy target |
| CN112225565A (en) * | 2020-10-14 | 2021-01-15 | 宁波江丰电子材料股份有限公司 | Preparation method of tungsten-silicon target blank |
| CN112375924A (en) * | 2020-11-10 | 2021-02-19 | 将乐三晶新材料有限公司 | Process equipment system for industrially producing silicon-aluminum-titanium alloy |
| CN114427081A (en) * | 2022-01-26 | 2022-05-03 | 宁波江丰电子材料股份有限公司 | Preparation method of ultrahigh-purity aluminum-silicon-titanium sputtering target alloy |
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Application publication date: 20120118 |