CN102321816A - Method for preparing CuWCr composite material through electric arc melting and infiltration method - Google Patents
Method for preparing CuWCr composite material through electric arc melting and infiltration method Download PDFInfo
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- CN102321816A CN102321816A CN201110297797A CN201110297797A CN102321816A CN 102321816 A CN102321816 A CN 102321816A CN 201110297797 A CN201110297797 A CN 201110297797A CN 201110297797 A CN201110297797 A CN 201110297797A CN 102321816 A CN102321816 A CN 102321816A
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Abstract
The present invention discloses a method for preparing a CuWCr composite material through electric arc melting and an infiltration method. The method comprises: adding Cu powder and Cr powder to a mixer to carry out mixing; carrying out mould pressing or cold isostatic pressing for the mixed material; placing the pressed blank in a vacuum sintering furnace to carry out sintering under a vacuum environment to obtain a CuCr infiltration blank; then carrying out mould pressing or cold isostatic pressing for W powder, and controlling the porosity of the W blank; placing the W blank in the vacuum sintering furnace to carry out sintering under a vacuum environment to obtain a W skeleton; finally, placing the W skeleton on the bottom of a water-cooled copper crucible of a consumable electrode arc melting furnace, placing the prepared CuCr infiltration blank on the W skeleton, carrying out melting for the CuCr infiltration blank under a vacuum environment, such that the CuCr infiltration blank is infiltrated in the W skeleton after the CuCr infiltration blank is molten at high arc temperature; carrying out cooling to obtain the CuWCr composite material. The prepared CuWCr composite material provided by the present invention has characteristics of high voltage strength resistance, high conductivity and low impurity content.
Description
Technical field
The present invention relates to technical field of material, be specifically related to the method that a kind of arc melting and infiltration method prepare the CuWCr matrix material.
Background technology
At present, the method for preparing the CuWCr matrix material mainly is process for sintering and infiltration and mechanical alloying method.Have in the microstructure of the CuWCr matrix material of process for sintering and infiltration preparation independently chromium mutually or tungsten exist mutually, reduced the proof voltage intensity of material.The WCr alloying level is not enough in the CuWCr matrix material of mechanical alloying method preparation, has independently chromium phase, and then has reduced the proof voltage intensity of material, and very easily introduce impurity in the preparation process, has reduced conduction, the heat conductivility of material.
Summary of the invention
The purpose of this invention is to provide the method that a kind of arc melting and infiltration method prepare the CuWCr matrix material, it is low to have solved the CuWCr matrix material proof voltage intensity that existing method prepares, and the foreign matter content height causes the low problem of electric conductivity.
The technical scheme that the present invention adopted is, a kind of arc melting and infiltration method prepare the method for CuWCr matrix material, and this method is implemented according to following operation steps:
The preparation of CuCr infiltration base
Take by weighing 25%～66% Cu powder, 34%～75% Cr powder by mass percentage and put into mixer and mixed 3～6 hours; Mixed powder is being carried out mold pressing or under 260MPa, carrying out isostatic cool pressing under the 400MPa; The blank that suppresses is placed in the vacuum sintering furnace, be not less than 10 in vacuum tightness
-2Be warming up to 900 ℃～1050 ℃ under the vacuum environment of Pa, sintering 60 minutes～120 minutes obtains CuCr infiltration base;
The preparation of W skeleton
The W powder is pressed into blank, and the porosity of blank is controlled at 35%～40%, and blank is placed in the vacuum sintering furnace, is not less than 10 in vacuum tightness
-2Be warming up to 1050 ℃～1500 ℃ under the vacuum environment of Pa, sintering 90 minutes～150 minutes makes it sinter skeleton into;
Arc melting and aftertreatment
A, will prepare the W skeleton place self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing then, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current and be not less than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, in water jacketed copper crucible, obtains the CuWCr ingot casting;
B, at last the CuWCr ingot casting is carried out machining.
Characteristics of the present invention also are,
Wherein the purity of Cu powder is not less than 99% in the preparation of CuCr infiltration base, and the purity of Cr powder is not less than 99.7%.
The invention has the beneficial effects as follows that the CuWCr matrix material foreign matter content for preparing through arc melting and infiltration method is few, so specific conductivity is high, and proof voltage intensity is high.
Embodiment
Below in conjunction with embodiment the present invention is elaborated,
The method that the present invention provides a kind of arc melting and infiltration method to prepare the CuWCr matrix material, this method is implemented according to following operation steps:
The preparation of CuCr infiltration base
Taking by weighing purity that 25%～66% purity is not less than 99% Cu powder and 34%～75% by mass percentage is not less than 99.7% Cr powder and puts into mixer and mixed 3～6 hours; Mixed powder is being carried out mold pressing or under 260MPa, carrying out isostatic cool pressing under the 400MPa; The blank that suppresses is placed in the vacuum sintering furnace, be not less than 10 in vacuum tightness
-2Be warming up to 900 ℃～1050 ℃ under the vacuum environment of Pa, sintering 60 minutes～120 minutes obtains CuCr infiltration base;
The preparation of W skeleton
The W powder is pressed into blank, and the porosity of blank is controlled at 35%～40%, and blank is placed in the vacuum sintering furnace, is not less than 10 in vacuum tightness
-2Be warming up to 1050 ℃～1500 ℃ under the vacuum environment of Pa, sintering 90 minutes～150 minutes makes it sinter skeleton into;
Arc melting and aftertreatment
A, will prepare the W skeleton place self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing then, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current and be not less than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, in water jacketed copper crucible, obtains the CuWCr ingot casting;
B, at last the CuWCr ingot casting is carried out machining.
Embodiment 1
At first, Cu powder 66%, Cr powder 34% are put into mixer mixed 3 hours, mixed powder is carried out mold pressing under 400MPa, the blank that suppresses is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 900 ℃ under the vacuum environment of Pa, sintering 120 minutes obtains CuCr infiltration base.
Then, the W powder is molded into blank under 400MPa, the porosity of blank is controlled to be 40%, blank is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 1050 ℃ under the vacuum environment of Pa, sintering 150 minutes makes it sinter skeleton into.
At last, the W skeleton for preparing is placed self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current greater than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, and take out the cooling back, promptly prepares the CuWCr matrix material.
Embodiment 2
At first, Cu powder 25%, Cr powder 75% are put into mixer mixed 6 hours, mixed powder is carried out isostatic cool pressing under 400MPa, the blank that suppresses is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 1050 ℃ under the vacuum environment of Pa, sintering 60 minutes obtains CuCr infiltration base.
Then, the W powder is carried out isostatic cool pressing under 260MPa, the porosity of blank is controlled to be 35%, blank is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 1500 ℃ under the vacuum environment of Pa, sintering 90 minutes makes it sinter skeleton into.
At last, the W skeleton for preparing is placed self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current greater than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, and take out the cooling back, promptly prepares the CuWCr matrix material.
Embodiment 3
At first, Cu powder 33%, Cr powder 67% are put into mixer mixed 5 hours, mixed powder is carried out mold pressing under 400MPa, the blank that suppresses is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 950 ℃ under the vacuum environment of Pa, sintering 100 minutes obtains CuCr infiltration base.
Then, the W powder is molded into blank under 400MPa, the porosity of blank is controlled to be 37%, blank is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 1200 ℃ under the vacuum environment of Pa, sintering 120 minutes makes it sinter skeleton into.
At last, the W skeleton for preparing is placed self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current greater than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, and take out the cooling back, promptly prepares the CuWCr matrix material.
Embodiment 4
At first, Cu powder 50%, Cr powder 50% are put into mixer mixed 4 hours, mixed powder is carried out isostatic cool pressing under 400MPa, the blank that suppresses is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 1000 ℃ under the vacuum environment of Pa, sintering 90 minutes obtains CuCr infiltration base.
Then, the W powder is carried out isostatic cool pressing under 260MPa, the porosity of blank is controlled to be 35%, blank is placed in the vacuum sintering furnace, in vacuum tightness greater than 10
-2Be warming up to 1350 ℃ under the vacuum environment of Pa, sintering 100 minutes makes it sinter skeleton into.
At last, the W skeleton for preparing is placed self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current greater than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, and take out the cooling back, promptly prepares the CuWCr matrix material.
The performance comparison of the CuWCr matrix material of the inventive method preparation and the CuWCr of prior art for preparing is seen shown in the table 1.
The contrast of table 1CuWCr performance of composites
Can find out from last table, the material that the inventive method obtains, its hardness, specific conductivity, density, proof voltage disruptive strength and shut off value all are improved, and foreign matter content is low, has excellent comprehensive performances.
Method of the present invention is used self-consumption electrode arc melting furnace, adopts the method for arc melting+infiltration can make chromium be completed into sosoloid mutually, improves the proof voltage intensity of material, can play the effect of purification again to material, obtains the CuWCr matrix material of premium properties.
Claims (2)
1. arc melting and infiltration method prepare the method for CuWCr matrix material, it is characterized in that this method is implemented according to following operation steps:
The preparation of CuCr infiltration base
Take by weighing 25%～66% Cu powder, 34%～75% Cr powder by mass percentage and put into mixer and mixed 3～6 hours; Mixed powder is being carried out mold pressing or under 260MPa, carrying out isostatic cool pressing under the 400MPa; The blank that suppresses is placed in the vacuum sintering furnace, be not less than 10 in vacuum tightness
-2Be warming up to 900 ℃～1050 ℃ under the vacuum environment of Pa, sintering 60 minutes～120 minutes obtains CuCr infiltration base;
The preparation of W skeleton
The W powder is pressed into blank, and the porosity of blank is controlled at 35%～40%, and blank is placed in the vacuum sintering furnace, is not less than 10 in vacuum tightness
-2Be warming up to 1050 ℃～1500 ℃ under the vacuum environment of Pa, sintering 90 minutes～150 minutes makes it sinter skeleton into;
Arc melting and aftertreatment
A, will prepare the W skeleton place self-consumption electrode arc melting furnace water jacketed copper crucible bottom, on the W skeleton, place the CuCr infiltration base for preparing then, be not less than 10 in vacuum tightness
-3Under the vacuum environment of Pa, regulate the melting electric current and be not less than 1200A, melting CuCr infiltration base makes CuCr infiltration base under high arc temperature, melt the back infiltration in the W skeleton, in water jacketed copper crucible, obtains the CuWCr ingot casting;
B, at last the CuWCr ingot casting is carried out machining.
2. method according to claim 1 is characterized in that the purity of Cu powder is not less than 99% in the preparation of CuCr infiltration base, and the purity of Cr powder is not less than 99.7%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104759622A (en) * | 2015-03-04 | 2015-07-08 | 西安理工大学 | Preparation method for CuWc-CuCr integrated contact |
| CN115213405A (en) * | 2022-07-15 | 2022-10-21 | 陕西斯瑞新材料股份有限公司 | Preparation method of high-voltage-resistance copper-chromium contact material |
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| JPS50979A (en) * | 1973-05-08 | 1975-01-08 | ||
| JPH05979A (en) * | 1991-06-19 | 1993-01-08 | Tohoku Kako Kk | Method for separating and purifying cashew nutshell juice |
| US20020068004A1 (en) * | 2000-12-06 | 2002-06-06 | Doh Jung Mann | Method of controlling the microstructures of Cu-Cr-based contact materials for vacuum interrupters and contact materials manufactured by the method |
| CN101126136A (en) * | 2007-09-26 | 2008-02-20 | 西安理工大学 | Method for manufacturing CuWCr composite material by using WCr alloy powder |
| CN101552147A (en) * | 2009-03-30 | 2009-10-07 | 西安理工大学 | Preparation method of CuW/CrCu integral high-voltage electrical contacts |
-
2011
- 2011-09-30 CN CN201110297797A patent/CN102321816A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50979A (en) * | 1973-05-08 | 1975-01-08 | ||
| JPH05979A (en) * | 1991-06-19 | 1993-01-08 | Tohoku Kako Kk | Method for separating and purifying cashew nutshell juice |
| US20020068004A1 (en) * | 2000-12-06 | 2002-06-06 | Doh Jung Mann | Method of controlling the microstructures of Cu-Cr-based contact materials for vacuum interrupters and contact materials manufactured by the method |
| CN101126136A (en) * | 2007-09-26 | 2008-02-20 | 西安理工大学 | Method for manufacturing CuWCr composite material by using WCr alloy powder |
| CN101552147A (en) * | 2009-03-30 | 2009-10-07 | 西安理工大学 | Preparation method of CuW/CrCu integral high-voltage electrical contacts |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104759622A (en) * | 2015-03-04 | 2015-07-08 | 西安理工大学 | Preparation method for CuWc-CuCr integrated contact |
| CN104759622B (en) * | 2015-03-04 | 2017-01-04 | 西安理工大学 | A kind of preparation method of CuWC-CuCr integral contact |
| CN115213405A (en) * | 2022-07-15 | 2022-10-21 | 陕西斯瑞新材料股份有限公司 | Preparation method of high-voltage-resistance copper-chromium contact material |
| CN115213405B (en) * | 2022-07-15 | 2023-05-12 | 陕西斯瑞新材料股份有限公司 | Preparation method of high-pressure-resistance copper-chromium contact material |
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Application publication date: 20120118 |