CN102312216A - Method for forming titanium nitride film on roller surface - Google Patents
Method for forming titanium nitride film on roller surface Download PDFInfo
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- CN102312216A CN102312216A CN2010102139843A CN201010213984A CN102312216A CN 102312216 A CN102312216 A CN 102312216A CN 2010102139843 A CN2010102139843 A CN 2010102139843A CN 201010213984 A CN201010213984 A CN 201010213984A CN 102312216 A CN102312216 A CN 102312216A
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- titanium nitride
- roller
- reaction chamber
- roller surface
- nitride membrane
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Abstract
The invention discloses a method for forming a titanium nitride film on a roller surface. The method comprises the following steps of: putting a roller in a reactor chamber; vacuumizing the reactor chamber; heating the roller; and respectively introducing titanium-containing organic gas and nitrogen-containing gas to the reactor chamber at intervals in a pulse mode so as to form the titanium nitride film on the roller surface.
Description
Technical field
The present invention relates in particular to a kind of method that forms titanium nitride membrane in roller surface about a kind of film coating method.
Background technology
Blooming piece is to utilize the copper roller with microstructure engraving at present, resin carrier is impressed back light solidify completion, and on processing procedure, be difficult to avoid grit to drop in roller surface.Less because of the hard copper hardness of plating, so when roller remained in operation, grit just drove between resin carrier and wheel face thereupon, cause scratch at last and cause diaphragm finished product optical quality bad.Because of wheel face is a copper material, form cupric oxide easily so be exposed to atmospheric environment on the other hand, when the zone of oxidation area increases, will cause microstructure to destroy, last roller is scrapped and must be carved again.
Directly plate nickel dam or the capable again engraving of titanium-containing layer at roller; Though increased the wheel surface hardness but certainly will shorten diamond cutter work-ing life; Therefore best mode is still on the copper roller and carves microstructure, manages to make the abrasion performance or the antioxidant effect of resist to reach wheel face again.
Because the roller volume is bigger; If carry out the plated film of titanium nitride with general PVD mode, not only because hardness is not high enough, and because of the consideration of membrane uniformity; Maybe be because target storing, electric slurry source and roller rotation or the like doubt must be made the comparatively complicated system of a cover again.
Summary of the invention
In view of this, be necessary to provide a kind of film thickness control and level and smooth, the uniform method that forms titanium nitride membrane in roller surface of film easily.
A kind of method at roller surface formation titanium nitride membrane, it comprises: roller is put into reaction chamber; Said reaction chamber is vacuumized; Heat said roller; In said reaction chamber, introduce titaniferous organic gas and nitrogenous gas at interval to form titanium nitride membrane with pulse mode respectively in said roller surface.
Compared with prior art; The method at roller surface formation titanium nitride membrane of the embodiment of the invention is the atomic level plated film; Through the cycle life of control introducing gas, can control the thickness of film, so; The thickness of titanium nitride membrane is controlled easily, can under the prerequisite that does not influence roller chart case, accomplish plated film; And titanium nitride membrane smoothness, homogeneity that aforesaid method forms are better.
Description of drawings
Fig. 1 is for being positioned over roller to be coated in the synoptic diagram of reaction chamber.
The main element nomenclature
Embodiment
To combine accompanying drawing that the embodiment of the invention is done further explain below
The embodiment of the invention comprises the steps: in the method that roller surface forms titanium nitride membrane
A puts into reaction chamber with roller.
B introduces the titaniferous organic gas with pulse mode in reaction chamber;
C introduces rare gas element in reaction chamber;
D introduces nitrogenous reactant gases with pulse mode in reaction chamber;
E introduces rare gas element in reaction chamber;
F, repeating step b, c, d, e are until forming titanium nitride membrane in roller surface.
See also Fig. 1, particularly, in step a; Open the lid 11 of reaction chamber 20, roller 10 is placed on the bracing frame 23 that is arranged on the base 12, so that roller 10 is spaced apart with reaction chamber 20 inwalls; Lid 11 is covered seal cavity of formation on base 12 so that in the reaction chamber 20; Then reaction chamber 20 is evacuated to that reaction chamber 20 internal pressure scopes are 1 millitorr to 100 millitorr, to make its temperature be 200 to 400 degrees centigrade to heating roller 10, preferably, temperature is 200 to 250 degrees centigrade.
Particularly, in step b, the titaniferous organic gas is fed in the reaction chamber 20 through the inlet mouth 21 that is arranged on the reaction chamber 20 with 10 to 20 seconds recurrent pulses.
Because roller is exposed in the reaction chamber, titanium has the metal gas evaporation and chemically is adsorbed on roller surface from titaniferous, forms saturated titanium layer.
Certainly, also can swing roller in this step, make titanium layer be formed uniformly in roller surface more.
The titaniferous organic gas is selected from TiCl
4, Ti (N (CH
3)
2)
4, Ti (N (C
2H
5)
2)
4, Ti (N (CH
3) (C
2H
5))
4Or at least two kinds mixed gas.
Particularly; In step c; The mixed gas of rare gas element hydrogen, argon gas, helium or at least two kinds is fed in the reaction chambers 20 through the inlet mouth 21 that is arranged on the reaction chamber 20, so that unnecessary titaniferous organic gas is blown out with purification reaction chamber 20 through air outlet 22.
The time length that feeds rare gas element can be 1 to 5 second.
Particularly, in steps d, nitrogenous reactant gases is introduced in the reaction chamber 20 through the inlet mouth 21 that is arranged on the reaction chamber 20 with 10 to 20 seconds recurrent pulses.
Thereby nitrogen in the nitrogenous gas and the chemisorption titanium generation chemical reaction in the titanium layer of roller surface generates one deck titanium nitride (TiN) film in roller surface.
Nitrogenous reactant gases is selected from N
2, NH
3Or the mixed gas of the two.
Certainly, also can swing roller in this step, make titanium nitride membrane be formed uniformly in roller surface more.
Particularly; In step e; The mixed gas of rare gas element hydrogen, argon gas, helium or at least two kinds is fed in the reaction chambers 20 through the inlet mouth 21 that is arranged on the reaction chamber 20; So that unnecessary nitrogenous gas or itself and the by product that contains the reaction of titanium metal organic gas are blown out purifying reaction chamber 20 through air outlet 22, thereby accomplish the plated film of one-period.
Particularly, in step f,, so, need carry out the plated film in a plurality of cycles for the titanium nitride membrane that obtains the pre-determined thickness or the number of plies because titanium nitride membrane is the film and each cycle generation one deck titanium nitride membrane of atomic level.
Certainly, obtain thin film if desired, then need not carry out the plated film in a plurality of cycles.
Above-mentioned method at roller surface formation titanium nitride membrane is the atomic level plated film; Introduce the cycle life of gas through control; Can control the thickness of film; So the thickness of titanium nitride membrane is controlled easily, the hardness that can under the prerequisite that does not influence roller chart case, accomplish plated film and titanium nitride membrane is higher; And titanium nitride membrane smoothness, homogeneity that aforesaid method forms are better.
It is understandable that those skilled in the art also can do other variation etc. and be used for design of the present invention in spirit of the present invention, as long as it does not depart from technique effect of the present invention and all can.These all should be included within the present invention's scope required for protection according to the variation that the present invention's spirit is done.
Claims (9)
1. one kind forms the method for titanium nitride membrane in roller surface, and it comprises:
A puts into reaction chamber with roller;
B vacuumizes said reaction chamber;
C heats said roller;
D introduces titaniferous organic gas and nitrogenous gas to form titanium nitride membrane in said roller surface with pulse mode respectively at interval in said reaction chamber.
2. the method at roller surface formation titanium nitride membrane as claimed in claim 1 is characterized in that said titaniferous organic gas is selected from TiCl
4, Ti (N (CH
3)
2)
4, Ti (N (C
2H
5)
2)
4, Ti (N (CH
3) (C
2H
5))
4Or at least two kinds mixed gas.
3. the method at roller surface formation titanium nitride membrane as claimed in claim 2 is characterized in that said nitrogenous reactant gases is selected from N
2, NH
3Or the mixed gas of the two.
4. the method at roller surface formation titanium nitride membrane as claimed in claim 1 is characterized in that, said reaction chamber is evacuated to pressure between 1 millitorr to 100 millitorr.
5. the method at roller surface formation titanium nitride membrane as claimed in claim 1 is characterized in that, heats said roller to 200 to 250 degrees centigrade.
6. like each described method of claim 1 to 5, it is characterized in that the said recurrence interval is 10 to 20 seconds at roller surface formation titanium nitride membrane.
7. as claimed in claim 6ly form the method for titanium nitride membrane, it is characterized in that in roller surface, roller is put into said reaction chamber after, rotate said roller.
8. the method that forms titanium nitride membrane in roller surface as claimed in claim 6; It is characterized in that steps d comprises with pulse mode successively to be introduced the titaniferous organic gas, in reaction chamber, introduce rare gas element, in reaction chamber, introduces nitrogenous reactant gases and in reaction chamber, introduce rare gas element with pulse mode in reaction chamber.
9. as claimed in claim 8ly form the method for titanium nitride membrane in roller surface, it is characterized in that, said rare gas element is selected from the mixed gas of hydrogen, argon gas, helium or at least two kinds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102139843A CN102312216A (en) | 2010-06-30 | 2010-06-30 | Method for forming titanium nitride film on roller surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102139843A CN102312216A (en) | 2010-06-30 | 2010-06-30 | Method for forming titanium nitride film on roller surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102312216A true CN102312216A (en) | 2012-01-11 |
Family
ID=45425771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102139843A Pending CN102312216A (en) | 2010-06-30 | 2010-06-30 | Method for forming titanium nitride film on roller surface |
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|---|---|
| CN (1) | CN102312216A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103585862A (en) * | 2013-11-21 | 2014-02-19 | 中国科学院长春应用化学研究所 | Dehumidification reel and preparation method thereof |
| CN109778139A (en) * | 2017-11-13 | 2019-05-21 | 中芯国际集成电路制造(北京)有限公司 | The method and device of heater heating properties in a kind of improvement chemical vapor deposition chamber |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849298B2 (en) * | 2001-06-12 | 2005-02-01 | Hynix Semiconductor Inc. | Method for forming diffusion barrier film of semiconductor device |
| CN101611166A (en) * | 2007-03-15 | 2009-12-23 | 富士通微电子株式会社 | The formation method of chemical vapor-phase growing apparatus, film and the manufacture method of semiconductor device |
-
2010
- 2010-06-30 CN CN2010102139843A patent/CN102312216A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849298B2 (en) * | 2001-06-12 | 2005-02-01 | Hynix Semiconductor Inc. | Method for forming diffusion barrier film of semiconductor device |
| CN101611166A (en) * | 2007-03-15 | 2009-12-23 | 富士通微电子株式会社 | The formation method of chemical vapor-phase growing apparatus, film and the manufacture method of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103585862A (en) * | 2013-11-21 | 2014-02-19 | 中国科学院长春应用化学研究所 | Dehumidification reel and preparation method thereof |
| CN109778139A (en) * | 2017-11-13 | 2019-05-21 | 中芯国际集成电路制造(北京)有限公司 | The method and device of heater heating properties in a kind of improvement chemical vapor deposition chamber |
| CN109778139B (en) * | 2017-11-13 | 2021-06-22 | 中芯国际集成电路制造(北京)有限公司 | Method and device for improving heating performance of heater in chemical vapor deposition chamber |
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Application publication date: 20120111 |