CN102303869B - Method for separating silicon from silicon carbide in silicon wafer wire saw slurry recovery treatment tailing by two-step process - Google Patents
Method for separating silicon from silicon carbide in silicon wafer wire saw slurry recovery treatment tailing by two-step process Download PDFInfo
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Abstract
The invention discloses a method for separating silicon from silicon carbide in silicon wafer wire saw slurry recovery treatment tailing by a two-step process, which comprises: 1, placing original tailing in surfactant for treatment, washing and drying, wherein the surfactant is single or mixed acid solution and contains a micro amount of surfactant; and 2, placing the modified tailing powder in a separation medium, mixing, stirring, and standing to allow silicon carbide and silicon to enter an upper layer and a lower layer respectively to be separated, wherein the separation medium is mixture of water and solvent. In the method, the process is simple, the cost is low, the enrichment rate and recovery rate of the silicon and silicon carbide are high, and the recycling of silicon and silicon carbide from a large amount of crystal silicon wire saw slurry from photovoltaic industry can be realized.
Description
technical field
The present invention relates to the method for silicon and silicon carbide in a kind of silicon scroll saw mortar recycling tailing, especially a kind of two-step approach is separated silicon in silicon wafer wire saw mortar recycling tailing and the method for silicon carbide.
background technology
Modern photovoltaic industry is based on the crystal silicon chip solar cell more than 85%, and required monocrystalline silicon piece or polysilicon chip are obtained by the polycrystalline silicon ingot casting cutting of silicon single crystal rod or directional freeze respectively.Produce in the process of crystal-silicon battery slice at existing multi-wire saw, approximately have the crystalline silicon up to 40-60% to enter the mortar waste liquid in cutting.The main component that forms mortar is mainly polyoxyethylene glycol, silicon carbide abrasive particle and silicon grain.At present, to the existing mature technology of the recovery of polyoxyethylene glycol and more coarse grained silicon carbide abrasive large-scale application, stay the tailing of silicon powder-containing and thinner carborundum powder after recovery.Because these two kinds of powder physico-chemical properties are close, its Separation and Recovery has more highly difficult, and these tailings generally are used as waste or cheap ceramic raw material is processed.Therefore low-cost these two kinds of powders of effectively separation are very crucial.There are up to now some Patents technology to announce, below carry out brief review.
The recovery and utilization technology patent of silica flour in two silicon scroll saws bits that the U.S. successively authorizes Billiet etc. to declare in 2004 and 2005, respectively " from the photovoltaic cell Photovoltaic cells from silicon kerf of silicon bits; U.S. Pat 6780665; 2004.08.24 " and " from the MEMS device MEMS and MEMS components from silicon kerf of silicon bits; U.S. Pat 6838047,2005.01.04 ".They respectively are divided into scroll saw bits recovery technology and device technology two parts are made in the moulding of silicon bits micro mist compression and sintering.With regard to relevant front part technology, two patents all propose to adopt pneumatic flotation technology divided silicon and carborundum powder, using and have the organic surface active agent of highly selective to collect the extraction silica flour as collecting agent to silicon face.Two patents are not all pointed out concrete surfactant component, and the technology that also has no realizes the report of mass-producing application.
Start the patent of invention of " recovery and treatment method of CN101113029 monocrystalline silicon cutting waste liquor " of publicity domestic in January, 2008.This invention to the recovery technology of silica flour bits is: obtain the mixture of carborundum powder and silica flour by cleaning after, dissolve wherein silica flour with hydrofluoric acid, nitric acid mix acid liquor, then obtain silicate fluoride solution by evaporation-condensation, the author claims " after it is dried, can be processed into silicon single crystal ".This process is perhaps effective with regard to reclaiming silicon carbide, and silicon mixed acid dissolves and slatterns, and can not realize the recovery of HIGH-PURITY SILICON bits.The patent of invention of " CN101130237 method that reclaims silica flour and carborundum powder from the cutting waste mortar " is disclosed in February, 2008.This patent is declared the liquid liquid flotation separation carborundum powder and the silica flour that adopt the air-flow flotation technology and form with methenyl bromide.In September, 2009, the patent of invention of publicity " CN101671022B, a kind of method that reclaims solar-grade polysilicon from list/polysilicon cutting slurry ", to add the resulting solution of polyoxyethylene glycol in water, carry out physics to the mortar powder settlement separate.The patent of invention of publicity in October, 2010 " CN101941699A; reclaim the method for silicon and silicon carbide in silicon single crystal and polycrystalline silicon cut waste ", adopt trichloromethane, tetracol phenixin etc. to form the different levels of density, silicon and silicon carbide in the smear metal of settlement separate method divided silicon.Above-mentioned three patented technologies all attempt to use the method for physics sedimentation to realize separating of rule and silicon carbide in mortar.We know, the silicon carbide produced in polysilicon scroll saw process and silica flour bits mostly are micron to submicron order, and the density of silicon and silicon carbide is close, (silicon density is 2330 kg/m
3, silicon carbide density is 3060 kg/m
3), according to universal experience, use in liquid phase sedimentation method to separate must effect limited.And in these several technology, the reagent that will use the costliness such as a large amount of methenyl bromide (using in CN101130237), trichloromethane, tetracol phenixin, epoxy chloropropane (use in CN101941699A with) and tool toxicity had, unsatisfactory as the HIGH-PURITY SILICON extractive technique.
In the patent " CN101491888B; the foam flotation method of divided silicon powder and silicon carbide powder " of in January, 2011 mandate and the patent " CN101623852B; the interfacial tension separation method of silicon and carborundum powder " of authorizing in February, 2011, all propose by solvent and surface-modifying agent, silicon and silicon carbide powder modifying surface are processed, strengthen the difference of their interfacial tensions in same solvent, and and then realize separating.These two kinds of technology start sight is focused on the change of the physico-chemical property of particle surface, have broken away from the constraint that conventional art relies on merely silicon and the faint physical properties difference of silicon carbide, have larger novelty.Can obtain the high-purity silicon powder of content of carborundum impurities lower than 0.5%wt although apply these two patents, its rate of recovery is still lower.
The operation of pressing CN101491888B or CN101623852B separates complete by silicon carbide with silicon; If the purity of silicon reaches 98%, the rate of recovery 50% left and right of only having an appointment.Such rate of recovery meaning has been wasted a lot of silicon, still undesirable.
summary of the invention
The object of the invention is to provide a kind of two-step approach to separate silicon in silicon wafer wire saw mortar recycling tailing and the method for silicon carbide, this method technique is simple, with low cost, accumulation rate and the rate of recovery of silicon and silicon carbide are high, can be used for realizing silicon in a large amount of crystal silicon scroll saw mortar that photovoltaic industry produces and the recycling of silicon carbide.
A kind of method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: after original tailing mortar is placed in to surface-modifying agent processing 0.5-1.5h, the mass ratio of mortar and surface-modifying agent is 1:5-1:200; Surface-modifying agent is one or more the mixture solution in hydrochloric acid, sulfuric acid, hydrofluoric acid, Hydrogen bromide, hydrogen ion concentration is 0.01-0.5mol/l, and contains a kind of trace mineral supplement in Sodium hexametaphosphate 99 that massfraction is 0.05-0.15%, Sodium dodecylbenzene sulfonate, sodium lauryl sulphate; Powder after surface modification treatment, with washed with de-ionized water, is collected and within 5-7 hour, dried in 50-70 ℃ of insulation.
Second step: the tailing powder after drying, prepare the powder separation medium in powder and separating medium with the ratio of weight ratio 1:30-1:250, separating medium is water and oleic acid, linolic acid, kerosene, heavy oil, turps, the turps mixture of one or more in alcohol, n-hexyl alcohol, secondary octanol, Polyethylene Octylphenol Ether thoroughly, above-mentioned oven dry powder is placed in to separating medium, rotating speed with 1000-1100rad/min stirs 4-6min, system layering when standing, standing rear silicon carbide enters levels respectively with silicon and realizes separating.
The invention provides a kind of simple method with low cost of technique, solid formation in the waste mortar recycling tailing produced while effectively separating solar cell with the cutting of crystal silicon chip scroll saw, be silica flour and carborundum powder, greatly improved and separated mortar and reclaim after tailing in gained Silicon-rich system content and the rate of recovery of silicon carbide in silicon and rich silicon carbide system, thereby realized silicon in a large amount of crystal silicon scroll saw mortar that photovoltaic industry produces and the recycling of silicon carbide.Separate the silicon carbide purity 96% obtained by operation of the present invention, the rate of recovery can reach 93%; The purity 98% of silicon, the rate of recovery can reach 84%.
The wherein separation of embodiment 6 correspondences provided by the invention and recovering effect the best.
the accompanying drawing explanation:
Fig. 1 mortar reclaims tailing powder and the rich silicon carbide system formed after present method is separated and Silicon-rich system minute other XRD figure spectrum.With the peak of silicon carbide and silicon in not separated mortar, compare, the peak of the upper strata silicon carbide after separation obviously strengthens, and the peak of silicon obviously weakens, on the contrary lower floor.Show that silicon carbide has obtained separating preferably with silicon.
embodiment
The technology of the present invention includes but not limited to the following example.
The handled mortar of embodiment 1-embodiment 3 reclaims tailing from silicon wafer wire saw mortar recovery plant 1, for the waste mortar discharged in silicon wafer wire saw production extracts and reclaims the waste material stayed after polyoxyethylene glycol (PEG), washing, precipitation extraction recovery coarse particles silicon carbide abrasive through press filtration, its chief component is as shown in table 1.
The main component of the handled mortar of table 1 embodiment 1-3
| Composition | Silicon carbide | Silicon | Iron | Polyoxyethylene glycol | Other |
| Content (wt.%) | 77.1 | 14.3 | 3.9 | 3.3 | Surplus |
The handled mortar of embodiment 4-embodiment 8 reclaims tailing from silicon wafer wire saw mortar recovery plant 2, for the waste mortar discharged in silicon wafer wire saw production extracts and reclaims the waste material stayed after polyoxyethylene glycol (PEG), washing, precipitation extraction recovery coarse particles silicon carbide abrasive through press filtration, its chief component is as shown in table 2.
The main component of the handled mortar of table 2 embodiment 4-8
| Composition | Silicon carbide | Silicon | Iron | Other |
| Content (wt.%) | 51.3 | 43.5 | 1.7 | Surplus |
Embodiment 1:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: take above-mentioned tailing and be placed in surface-modifying agent and process 0.5h.The mass ratio of mortar and surface-modifying agent is 1:20.Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form.Wherein hydrogen ion concentration is 0.05mol/l, and the massfraction of Sodium hexametaphosphate 99 is 0.1%.Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations.
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio.Separating medium is percentage calculation by volume, is respectively: oleic acid 5%, and linolic acid 5%, turps is 1%, Polyethylene Octylphenol Ether is 0.2%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 5min of 1050rad/min.System layering when standing, upper strata is rich silicon carbide phase, lower floor is Si-rich phase.After standing 10min, levels is collected respectively to cleaning, weigh after 60 ℃ of insulations are dried in 6 hours.The powder that levels is obtained carries out XRD analysis, and result as shown in Figure 2.The peak of silicon and silicon carbide in the contrast raw material, in upper strata, the silicon carbide peak obviously strengthens, and the peak of silicon obviously weakens, on the contrary lower floor is, shows that raw material is well separated.Collected levels is analyzed, and the upper strata silicon carbide-containing is 95.2%, and lower floor is siliceous is 97.3%.Silicon carbide in contrast institute separating material and the amount of silicon are calculated, and the rate of recovery of silicon carbide is 87.7%, and the rate of recovery of silicon is 74.8%.
Embodiment 2:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: take above-mentioned tailing and be placed in surface-modifying agent and process 0.5h.The mass ratio of mortar and surface-modifying agent is 1:20.Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form.Wherein hydrogen ion concentration is 0.05mol/l, and the Sodium hexametaphosphate 99 massfraction is 0.1%.Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations.
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio.Separating medium is percentage calculation by volume, is respectively: oleic acid 5%, and kerosene 5%, secondary octanol 1%, Polyethylene Octylphenol Ether is 0.2%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 5min of 1050rad/min.After standing 10min, levels is collected respectively to cleaning, weigh after 60 ℃ of insulations are dried in 6 hours.Collected levels is analyzed, and the upper strata silicon carbide-containing is 96.1%, and lower floor is siliceous is 96.8%.Silicon carbide in contrast institute separating material and the amount of silicon are calculated, and the rate of recovery of silicon carbide is 92.9%, and the rate of recovery of silicon is 75.4%.
Embodiment 3:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: take above-mentioned tailing and be placed in surface-modifying agent and process 0.5h.The mass ratio of mortar and surface-modifying agent is 1:20.Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form.Wherein hydrogen ion concentration is 0.05mol/l, and the Sodium hexametaphosphate 99 massfraction is 0.1%.Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations.
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio.Separating medium is percentage calculation by volume, is respectively: kerosene 10%, and turps 1%, secondary octanol 1%, Polyethylene Octylphenol Ether is 0.2%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 5min of 1050rad/min.After standing 10min, levels is collected respectively to cleaning, weigh after 60 ℃ of insulations are dried in 6 hours.Collected levels is analyzed, and the upper strata silicon carbide-containing is 94.2%, and lower floor is siliceous is 95.9%.Silicon carbide in contrast institute separating material and the amount of silicon are calculated, and the rate of recovery of silicon carbide is 90.1%, and the rate of recovery of silicon is 67.3%.
Embodiment 4:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: take above-mentioned tailing and be placed in surface-modifying agent and process 1.5h.The mass ratio of mortar and surface-modifying agent is 1:20.Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form.Wherein hydrogen ion concentration is 0.1mol/l, and the Sodium hexametaphosphate 99 massfraction is 0.1%.Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations.
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio.Separating medium is percentage calculation by volume, is respectively: oleic acid 10%, and secondary octanol 1%, Polyethylene Octylphenol Ether is 0.2%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 5min of 1050rad/min.After standing 10min, levels is collected respectively to cleaning, weigh after 60 ℃ of insulations are dried in 6 hours.Collected levels is analyzed, and the upper strata silicon carbide-containing is 95.5%, and lower floor is siliceous is 97.7%.Silicon carbide in contrast institute separating material and the amount of silicon are calculated, and the rate of recovery of silicon carbide is 91.4%, and the rate of recovery of silicon is 83.5%.
Embodiment 5:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: take above-mentioned tailing and be placed in surface-modifying agent and process 1.5h.The mass ratio of mortar and surface-modifying agent is 1:20.Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form.Wherein hydrogen ion concentration is 0.1mol/l, and the Sodium hexametaphosphate 99 massfraction is 0.1%.Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations.
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio.Separating medium is percentage calculation by volume, is respectively: heavy oil 5%, and kerosene 5%, n-hexyl alcohol 1%, Polyethylene Octylphenol Ether is 0.2%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 5min of 1050rad/min.After standing 10min, levels is collected respectively to cleaning, weigh after 60 ℃ of insulations are dried in 6 hours.Collected levels is analyzed, and the upper strata silicon carbide-containing is 94.8%, and lower floor is siliceous is 98.1%.Silicon carbide in contrast institute separating material and the amount of silicon are calculated, and the rate of recovery of silicon carbide is 90.3%, and the rate of recovery of silicon is 84.3%.
Embodiment 6:(and claim 3 correspondence)
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: take above-mentioned tailing and be placed in surface-modifying agent and process 1.5h.The mass ratio of mortar and surface-modifying agent is 1:20.Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form.Wherein hydrogen ion concentration is 0.1mol/l, and the Sodium hexametaphosphate 99 massfraction is 0.1%.Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations.
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio.Separating medium is percentage calculation by volume, is respectively: oleic acid 5%, and linolic acid 5%, n-hexyl alcohol 1%, turps is alcohol 1% thoroughly, and Polyethylene Octylphenol Ether is 0.2%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 5min of 1050rad/min.After standing 10min, levels is collected respectively to cleaning, weigh after 60 ℃ of insulations are dried in 6 hours.Collected levels is analyzed, and the upper strata silicon carbide-containing is 95.8%, and lower floor is siliceous is 97.5%.The amount of silicon carbide and silicon in original mortar that contrasts is calculated, and the rate of recovery of silicon carbide is 92.3%, and the rate of recovery of silicon is 87.6%.
Embodiment 7:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: after original tailing mortar is placed in to surface-modifying agent processing 0.5h, the mass ratio of mortar and surface-modifying agent is 1:5; Surface-modifying agent is hydrochloric acid, hydrobromic mixture solution, and hydrogen ion concentration is 0.01mol/l, and contains the Sodium dodecylbenzene sulfonate trace mineral supplement that massfraction is 0.05%; Powder after surface modification treatment, with washed with de-ionized water, is collected and within 5 hours, dried in 50 ℃ of insulations.
Second step: the tailing powder after drying, prepare the powder separation medium in powder and separating medium with the ratio of weight ratio 1:30, separating medium is oleic acid 3%, kerosene 5%, secondary octanol 5%, Polyethylene Octylphenol Ether is 0.1%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 4min of 1000rad/min, system layering when standing, standing rear silicon carbide enters levels respectively with silicon and realizes separating.
Embodiment 8:
The method of silicon and silicon carbide in two-step approach separation silicon wafer wire saw mortar recycling tailing:
The first step: after original tailing mortar is placed in to surface-modifying agent processing 1.5h, the mass ratio of mortar and surface-modifying agent is 1:200; Surface-modifying agent is hydrochloric acid, sulfuric acid, hydrofluoric acid, hydrobromic mixture solution, and hydrogen ion concentration is 0.5mol/l, and contains the sodium lauryl sulphate trace mineral supplement that massfraction is 0.15%; Powder after surface modification treatment, with washed with de-ionized water, is collected and within 7 hours, dried in 70 ℃ of insulations.
Second step: the tailing powder after drying, prepare the powder separation medium in powder and separating medium with the ratio of weight ratio 1:250, separating medium is kerosene 15%, n-hexyl alcohol 5%, turps is alcohol 5% thoroughly, and Polyethylene Octylphenol Ether is 1%, Yu Weishui.Above-mentioned oven dry powder is placed in to separating medium, with the rotating speed stirring 6min of 1100rad/min, system layering when standing, standing rear silicon carbide enters levels respectively with silicon and realizes separating
.
Claims (2)
1. a two-step approach is separated the method for silicon and silicon carbide in silicon wafer wire saw mortar recycling tailing, it is characterized by:
The first step: original tailing mortar is placed in to surface-modifying agent and processes 0.5-1.5h, the mass ratio of mortar and surface-modifying agent is 1:5-1:200; Surface-modifying agent is one or more the mixture solution in hydrochloric acid, sulfuric acid, hydrofluoric acid, Hydrogen bromide, hydrogen ion concentration is 0.01-0.5mol/l, and contains a kind of trace mineral supplement in Sodium hexametaphosphate 99 that massfraction is 0.05-0.15%, Sodium dodecylbenzene sulfonate, sodium lauryl sulphate; Powder after surface modification treatment, with washed with de-ionized water, is collected and within 5-7 hour, dried in 50-70 ℃ of insulation;
Second step: the tailing powder after drying, prepare the powder separation medium in powder and separating medium with the ratio of weight ratio 1:30-1:250, separating medium is water and oleic acid, linolic acid, heavy oil, kerosene, turps, the turps mixture of one or more in alcohol, n-hexyl alcohol, secondary octanol, Polyethylene Octylphenol Ether thoroughly, above-mentioned oven dry powder is placed in to separating medium, rotating speed with 1000-1100rad/min stirs 4-6min, system layering when standing, standing rear silicon carbide enters levels respectively with silicon and realizes separating.
2. a kind of two-step approach as claimed in claim 1 is separated the method for silicon and silicon carbide in silicon wafer wire saw mortar recycling tailing, it is characterized by:
The first step: original tailing is placed in to surface-modifying agent and processes 1.5h.The mass ratio of mortar and surface-modifying agent is 1:20; Surface-modifying agent is the mixing solutions that hydrochloric acid, hydrofluoric acid, water and micro-Sodium hexametaphosphate 99 form, and hydrogen ion concentration is 0.1mol/l, and the Sodium hexametaphosphate 99 massfraction is 0.1%; Powder after surface modification treatment, with washed with de-ionized water, is collected and within 6 hours, dried in 60 ℃ of insulations;
Second step: get a certain amount of oven dry powder, and be the ratio preparation powder separation medium of 1:50 in mass ratio; Separating medium is percentage calculation by volume, is respectively: oleic acid 5%, and linolic acid 5%, n-hexyl alcohol 1%, turps is alcohol 1% thoroughly, and Polyethylene Octylphenol Ether is 0.2%, Yu Weishui; Above-mentioned oven dry powder is placed in to separating medium, and the rotating speed stirring 5min with 1050rad/min, collect respectively cleaning by levels after standing 10min, after 60 ℃ of insulations are dried in 6 hours, weighs.
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| CN102631991A (en) * | 2012-04-09 | 2012-08-15 | 江阴浩博科技有限公司 | Method for removing free carbon in SiC micro-powder |
| CN103373731B (en) * | 2012-04-12 | 2015-07-15 | 江西赛维Ldk太阳能高科技有限公司 | Method for recycling silicon powder from diamond wire cutting slurry |
| CN102746936A (en) * | 2012-08-08 | 2012-10-24 | 铁生年 | Recycling purification method for carborundum powder in silicon slice cutting waste liquid |
| CN103626182A (en) * | 2013-11-28 | 2014-03-12 | 安徽苏源光伏科技有限公司 | Reagent for recycling silicon carbide in silicon chip cutting waste and preparation method thereof |
| CN103639063B (en) * | 2013-11-28 | 2016-02-10 | 安徽苏源光伏科技有限公司 | A kind of silicon carbide micro-powder reclaims medicament |
| CN103623935B (en) * | 2013-11-28 | 2016-02-10 | 安徽苏源光伏科技有限公司 | A kind of high-purity silicon carbide reclaims flotation agent |
| CN103623934B (en) * | 2013-11-28 | 2016-02-10 | 安徽苏源光伏科技有限公司 | A kind of silicon carbide purification is separated medicament |
| CN103623936B (en) * | 2013-11-28 | 2016-05-04 | 安徽苏源光伏科技有限公司 | A kind of carborundum flotation agent |
| CN103639064B (en) * | 2013-11-28 | 2016-02-10 | 安徽苏源光伏科技有限公司 | A kind of medicament being separated silicon and carborundum in mortar |
| CN103639062B (en) * | 2013-11-28 | 2016-02-10 | 安徽苏源光伏科技有限公司 | The medicament of separating silicon carbide in a kind of mortar |
| CN108101063B (en) * | 2017-12-19 | 2021-02-02 | 中国科学院过程工程研究所 | Method for preparing silicon and silicon carbide by separating mortar cutting waste through organic-inorganic mixed medium |
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| US6838047B2 (en) * | 2001-08-28 | 2005-01-04 | Romain Louis Billiet | MEMS and MEMS components from silicon kerf |
| JP2009196849A (en) * | 2008-02-21 | 2009-09-03 | Sharp Corp | Silicon recovery method and silicon recovery apparatus |
| CN101491888B (en) * | 2009-03-05 | 2011-01-19 | 南昌大学 | Foam flotation method capable of separating silicon powder and carbon silicon powder |
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