CN102299214A - Method for separating substrate from epitaxial layer rapidly - Google Patents
Method for separating substrate from epitaxial layer rapidly Download PDFInfo
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- CN102299214A CN102299214A CN2011101574175A CN201110157417A CN102299214A CN 102299214 A CN102299214 A CN 102299214A CN 2011101574175 A CN2011101574175 A CN 2011101574175A CN 201110157417 A CN201110157417 A CN 201110157417A CN 102299214 A CN102299214 A CN 102299214A
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- substrate
- epitaxial loayer
- removable material
- thin layer
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Abstract
The invention discloses a method for separating a substrate from an epitaxial layer rapidly, comprising the following steps: taking an LED (light-emitting diode), wherein a removable material thin layer is formed between the substrate and the epitaxial layer of the LED and has the material characteristics of low melting point or resolvability; and exerting energy such as heat energy on the removable materials of the LED so that the removable material thin layer can be melted, gasified, decomposed or dissociated, thus separating the sapphire substrate from the epitaxial layer. In the method, the removable material thin layer is formed between the epitaxial layer and the sapphire substrate and can be removed in physical or chemical ways, so the substrate can be removed under the condition of simple and convenient operations such as heating, thus the advantages of low cost and market competitiveness are achieved.
Description
Technical field
The present invention relates to the light-emitting diode field, be meant the method for a kind of quick separate substrate and epitaxial loayer especially.
Background technology
Light-emitting diode (Light Emitting Diode, LED) basic structure of chip is epitaxial loayer of epitaxial growth on Sapphire Substrate, InGaN/GaN light-emitting semiconducting material for example, just making/bearing metal electrode at the upper surface of epitaxial loayer then and be used for injection current, realizing that electric energy converts luminous energy to.
Remove the led chip Sapphire Substrate at present and can adopt laser-stripping method, this method is in p type epi-layer surface deposit metal electrodes layer and solder layer successively, make it bonding by chip bonding process then with heat conducting base, allow the laser of certain energy density and wavelength from sapphire surface incident, laser energy is absorbed into heat energy at sapphire and GaN base LED epitaxial layer interface place by GaN base epitaxial loayer, temperature raises rapidly, interrupting the GaN bond makes it to dissociate, make epitaxial loayer and substrate separation, realize substrate-transfer, the new pedestal good with heat conductivility replaces Sapphire Substrate.
Such scheme adopts laser or abrasive method to remove substrate in the process of separate substrate and epitaxial loayer, and than higher, and the technology required time is longer to the requirement of equipment, thereby has improved the cost of technology.
Summary of the invention
The purpose of this invention is to provide the method for a kind of quick separate substrate and epitaxial loayer, it is separate substrate and epitaxial loayer fast, and can reduce the cost of technology.
For achieving the above object, the technical solution adopted in the present invention is as follows:
The method of a kind of quick separate substrate and epitaxial loayer comprises:
Get a light-emitting diode, have the removable material of a thin layer between the substrate of this light-emitting diode and the epitaxial loayer;
Removable material to this thin layer applies energy, makes the state of removable material of this thin layer change;
Change by removable materials behavior, make substrate no longer combine, and then make this substrate separate with this epitaxial loayer with epitaxial loayer.
Wherein, the removable material of this thin layer is that mode by evaporation, physical deposition or chemical deposition is formed between epitaxial loayer and the substrate.
Wherein, described removable material is metal, alloy or inorganic oxide, and its thickness is 1nm to 10 μ m.
Wherein, described removable material to this thin layer applies energy and comprises heating, irradiation and microwave mode.
Wherein, the state of described removable material changes and comprises fusing, gasification and decompose.
The embodiment of the invention also provides the method for a kind of quick separate substrate and epitaxial loayer, comprising:
Get a light-emitting diode, have the removable material of a thin layer between the substrate of this light-emitting diode and the epitaxial loayer;
Removable material to this thin layer applies solvent, makes the state of removable material of this thin layer change;
Change by removable materials behavior, make substrate no longer combine, and then make this substrate separate with this epitaxial loayer with epitaxial loayer.
Wherein, the removable material of this thin layer is that mode by evaporation, physical deposition or chemical deposition is formed between epitaxial loayer and the substrate.
Wherein, described removable material is metal, alloy or inorganic oxide, and its thickness is 1nm to 10 μ m.
Wherein, described solvent is etching solution, inorganic solvent or organic solvent.
Wherein, the state of described removable material changes and comprises and dissociate, dissolve and decompose.
The design concept of above-mentioned two technical schemes is identical, all be between substrate and epitaxial loayer, to form the removable material that adhesive effect can be provided earlier, and then make removable material production state variation with suitable physics or chemical mode, for example heat fused, gasification, decomposition, or etching dissolving or with variations such as corresponding solvent produces dissolving, decomposes or dissociates, substrate is separated with epitaxial loayer.
The invention has the advantages that:
Only use simple physics or chemical mode, for example heat or the mode of dissociating, just substrate can be removed from epitaxial loayer, easy and simple to handle quick, and reduced the technology cost, make technical scheme of the present invention have stronger market competitiveness.
Description of drawings
Fig. 1 is the chip structure schematic diagram of light-emitting diode of the present invention;
Fig. 2 removes the step block diagram of substrate approach one for the present invention;
Fig. 3 removes the structural change schematic diagram of substrate approach one for the present invention;
Fig. 4 removes the step block diagram of substrate approach two for the present invention;
Fig. 5 removes the structural change schematic diagram of substrate approach two for the present invention.
Embodiment
Below, enumerate preferred embodiment and conjunction with figs. and describe in detail promptly according to purpose of the present invention, effect and structure configuration.
See also Fig. 1, chip 10 formations of the disclosed light-emitting diode of the present invention comprise a substrate 12, and epitaxial loayer 14 of epitaxial growth on this substrate 12; Particularly, the removable material 16 that has skim between substrate 12 and the epitaxial loayer 14.
The removable material 16 of this thin layer can be metal, alloy material or inorganic oxide etc.; Particularly removable material 16 has one of material behavior that is disclosed below at least: low melting point, can decompose, can dissociate or solubilized.Wherein low-melting characteristic can allow removable material 16 melt when being heated or gasify; Decomposable characteristic can allow removable material 16 be heated or when appropriate solvent contacts, can decompose disengaging; In like manner can dissociate or soluble material behavior when being meant removable material 16 and appropriate solvent contacting the variation on can the generation state and break away from substrate 12 and epitaxial loayer 14.
In addition, removable material 16 can be by suitable mode, and for example modes such as evaporation, sputter or chemical deposition are formed between substrate 12 and the epitaxial loayer 14.But yet above-mentionedly only do the explanation of embodiment about the production method of removable material 16, be not in order to limit the method for producing of removable material 16 of the present invention.The thickness of removable again material 16 is preferred embodiment thickness with 1nm to 10um.
See also Fig. 2 and Fig. 3, the method for substrate that the present invention removes above-mentioned light-emitting diode chip for backlight unit is as follows:
The step S22 of Fig. 2 is a chip of getting above-mentioned light-emitting diode; Shown in Fig. 3 (a), the combination that consists of substrate 12, removable material 16 and epitaxial loayer 14 of chip 10.
The step S24 of Fig. 2 for example heats for chip is applied energy; Shown in Fig. 3 (a), be the chip 10 of above-mentioned light-emitting diode can be placed (not shown) on proper container or the tool, and place a suitable hot environment, reach the effect that the chip 10 of this light-emitting diode is provided energy by this.
The step S26 of Fig. 2 is the variation of the removable material of monitoring chip; Shown in Fig. 3 (b), because this removable material 16 can be low-melting metal or alloy, so generation state variation that at high temperature can be gradually, for example melt, gasify or decompose; The fusing point of selected in addition metal or alloy must not surpass the heat resisting temperature of the chip 10 of light-emitting diode; In other words, the epitaxial loayer 14 of chip 10 situation that unlikely generation damages under this hot environment.
The step S28 of Fig. 2 shown in the Fig. 3 that further arranges in pairs or groups (c), when substrate 12 separates with epitaxial loayer 14, can reach the purpose that removes substrate 12 for finishing separation steps.
By above-mentioned explanation, the present invention only uses the simple heating mode just can make the substrate 12 and epitaxial loayer 14 delamination of sapphire material, so operate very easy.
See also Fig. 4 and Fig. 5, the method for substrate that the present invention removes above-mentioned light-emitting diode chip for backlight unit is as follows:
The step S32 of Fig. 4 is a chip of getting above-mentioned light-emitting diode; Shown in Fig. 5 (a), the combination that consists of substrate 12, removable material 16 and epitaxial loayer 14 of chip 10.
The step S34 of Fig. 4 applies solvent to chip, for example applies etching solution or basic solvent; Shown in Fig. 5 (a), the chip 10 of above-mentioned light-emitting diode can be placed (not shown) on proper container or the tool, and place in the working range of solvent, the removable material 16 that reaches by this chip 10 of this light-emitting diode removes work.
The step S36 of Fig. 4, the variation of the removable material of monitoring chip; Shown in Fig. 5 (b), since should be removable material 16 be the material that can change with solvent, for example metal, alloy or inorganic oxide, so under the effect of solvent, removable material 16 meetings generation state variation is gradually for example dissolved, is decomposed or dissociates.
The step S38 of Fig. 4 shown in the Fig. 5 that further arranges in pairs or groups (c), when substrate separates with epitaxial loayer, can reach the purpose that removes substrate for finishing separation steps.
By above-mentioned explanation, the present invention just can make the substrate 12 and epitaxial loayer 14 delamination of sapphire material only by solvent and removable material production state variation, so operation is very easy.
Moreover disclosed physical heating mode or the dissolving of Dai Xue, the mode of dissociating, all are the contactless modes that remove, in other words the operator need not to worry to have contact force or external force acts on the epitaxial loayer, add that removable material only is the temporary joint layer between substrate and the epitaxial loayer, so removable material only needs very thin one deck to get final product, it can be fabricated between substrate and the epitaxial loayer easily and possess effect cheaply simultaneously.
The above is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. the method for quick separate substrate and epitaxial loayer is characterized in that, comprising:
Get a light-emitting diode, have the removable material of a thin layer between the substrate of this light-emitting diode and the epitaxial loayer;
Removable material to this thin layer applies energy, makes the state of removable material of this thin layer change;
Change by removable materials behavior, make substrate no longer combine, and then make this substrate separate with this epitaxial loayer with epitaxial loayer.
2. the method for quick separate substrate as claimed in claim 1 and epitaxial loayer is characterized in that: the removable material of this thin layer is that the mode by evaporation, physical deposition or chemical deposition is formed between epitaxial loayer and the substrate.
3. the method for quick separate substrate as claimed in claim 1 and epitaxial loayer is characterized in that: described removable material is metal, alloy or inorganic oxide, and its thickness is 1nm to 10 μ m.
4. the method for quick separate substrate as claimed in claim 1 and epitaxial loayer is characterized in that: described removable material to this thin layer applies energy and comprises heating, irradiation and microwave mode.
5. the method for quick separate substrate as claimed in claim 1 and epitaxial loayer is characterized in that: the state of described removable material changes and comprises fusing, gasification and decomposition.
6. the method for quick separate substrate and epitaxial loayer is characterized in that, comprising:
Get a light-emitting diode, have the removable material of a thin layer between the substrate of this light-emitting diode and the epitaxial loayer;
Removable material to this thin layer applies solvent, makes the state of removable material of this thin layer change;
Change by removable materials behavior, make substrate no longer combine, and then make this substrate separate with this epitaxial loayer with epitaxial loayer.
7. the method for quick separate substrate as claimed in claim 6 and epitaxial loayer is characterized in that: the removable material of this thin layer is that the mode by evaporation, physical deposition or chemical deposition is formed between epitaxial loayer and the substrate.
8. the method for quick separate substrate as claimed in claim 6 and epitaxial loayer is characterized in that: described removable material is metal, alloy or inorganic oxide, and its thickness is 1nm to 10 μ m.
9. the method for quick separate substrate as claimed in claim 6 and epitaxial loayer is characterized in that: described solvent is etching solution, inorganic solvent or organic solvent.
10. the method for quick separate substrate as claimed in claim 6 and epitaxial loayer is characterized in that: the state of described removable material changes and comprises and dissociate, dissolve and decompose.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101574175A CN102299214A (en) | 2011-06-13 | 2011-06-13 | Method for separating substrate from epitaxial layer rapidly |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101574175A CN102299214A (en) | 2011-06-13 | 2011-06-13 | Method for separating substrate from epitaxial layer rapidly |
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| CN102299214A true CN102299214A (en) | 2011-12-28 |
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| CN2011101574175A Pending CN102299214A (en) | 2011-06-13 | 2011-06-13 | Method for separating substrate from epitaxial layer rapidly |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107644928A (en) * | 2017-10-24 | 2018-01-30 | 江门市奥伦德光电有限公司 | A kind of self-supporting light emitting diode (LED) chip with vertical structure and preparation method thereof |
| CN111883629A (en) * | 2019-07-24 | 2020-11-03 | 友达光电股份有限公司 | Flexible element array substrate and manufacturing method thereof |
| CN113497170A (en) * | 2020-04-08 | 2021-10-12 | 台湾爱司帝科技股份有限公司 | Light emitting diode chip structure and chip transfer system and method |
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| CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
| CN101075651A (en) * | 2006-09-05 | 2007-11-21 | 武汉迪源光电科技有限公司 | GaN-based vertical LED power chip with current extending layer and barrier and its production |
| CN101794849A (en) * | 2010-02-23 | 2010-08-04 | 山东华光光电子有限公司 | Wet etching stripping method of SiC-substrate GaN-based LED |
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2011
- 2011-06-13 CN CN2011101574175A patent/CN102299214A/en active Pending
Patent Citations (3)
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| CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
| CN101075651A (en) * | 2006-09-05 | 2007-11-21 | 武汉迪源光电科技有限公司 | GaN-based vertical LED power chip with current extending layer and barrier and its production |
| CN101794849A (en) * | 2010-02-23 | 2010-08-04 | 山东华光光电子有限公司 | Wet etching stripping method of SiC-substrate GaN-based LED |
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| T. DETCHPROHM等: "The growth of thick GaN film on sapphire substrate by using ZnO buffer layer", 《JOURNAL OF CRYSTAL GROWTH》 * |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107644928A (en) * | 2017-10-24 | 2018-01-30 | 江门市奥伦德光电有限公司 | A kind of self-supporting light emitting diode (LED) chip with vertical structure and preparation method thereof |
| CN107644928B (en) * | 2017-10-24 | 2023-05-30 | 江门市奥伦德光电有限公司 | Self-supporting vertical structure LED chip and preparation method thereof |
| CN111883629A (en) * | 2019-07-24 | 2020-11-03 | 友达光电股份有限公司 | Flexible element array substrate and manufacturing method thereof |
| CN111883629B (en) * | 2019-07-24 | 2022-02-11 | 友达光电股份有限公司 | Flexible element array substrate and manufacturing method thereof |
| CN113497170A (en) * | 2020-04-08 | 2021-10-12 | 台湾爱司帝科技股份有限公司 | Light emitting diode chip structure and chip transfer system and method |
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Application publication date: 20111228 |