CN102298893A - Source electrode driving circuit and display device - Google Patents
Source electrode driving circuit and display device Download PDFInfo
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Abstract
The invention discloses a source electrode driving circuit and a display device. The source electrode driving circuit comprises a source electrode current generation module for generating a data current signal, a clock signal generation module for generating a clock signal, a current-voltage conversion module for converting the data current signal into a corresponding data voltage signal and outputting the data voltage signal to a corresponding data signal line, and a switch selection module for transmitting the data current signal output by the source electrode current generation module to the current-voltage conversion module or directly transmitting the data current signal to a corresponding data line under control of the clock signal. The source electrode driving circuit and the display device can accelerate the speed of current programming on the basis of being capable of ensuring the advantages of high-precision gray level control and high stability of a current type pixel structure, thereby meeting the requirements on high-resolution large-size display.
Description
Technical field
The present invention relates to the display device technical field, relate in particular to a kind of source electrode drive circuit and display device.
Background technology
Adopt OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display of organic electroluminescence is a kind of emerging flat-panel display device, because its preparation technology is simple, cost is low, response speed is fast, be easy to realize colored demonstration and large screen display, low in energy consumption, realize easily and coupling, luminosity height, the working temperature wide accommodation of driver ic, volume is frivolous and be easy to realize advantage such as flexibility demonstration, and it is had broad application prospects.
Difference according to type of drive, OLED can be divided into passive matrix and drive (Passive Matrix OrganicLight Emission Display, PMOLED) and driven with active matrix (Active Matrix Organic LightEmission Display, AMOLED) two kinds.Technology is simple though passive matrix drives, and cost is lower, because of there being shortcomings such as cross-talk, high power consumption, low life-span, can not satisfy the needs that high Resolution and Large Size shows.By contrast, driven with active matrix is because added thin film transistor (TFT) (Thin FilmTransistor on panel, TFT), make that pixel cell can both be luminous in a frame time, so its needed drive current is little, low in energy consumption, the life-span is longer, and the large scale that can satisfy the many gray scales of high resolving power shows needs.
Traditional AMOLED pixel-driving circuit is simple two pipe TFT structures, as shown in Figure 1.Though sort circuit is simple in structure, but can not compensate threshold voltage shift (non-crystalline silicon tft) or threshold voltage inconsistent (low temperature polycrystalline silicon TFT), its result will cause the electric current that flows through OLED inconsistent, and making the luminosity inequality influences display quality.
In order to solve the inconsistent problem of brightness that threshold voltage brings, people propose various image element circuits, these circuit can be divided into two classes according to the difference of its drive signal: voltage driven type image element circuit (VoltageProgrammed Pixel Circuit, VPPC) and the current drive-type image element circuit (Current ProgrammedPixel Circuit, CPPC).
The voltage driven type image element circuit has the very fast speed that discharges and recharges with respect to the current drive-type image element circuit, can satisfy the needs of large tracts of land, high-resolution demonstration.But, many voltage driven type image element circuits have been introduced many control signals and complicated program process comparatively in the compensation threshold voltage shift, make circuit have relatively high expectations to the drive IC of outside, the domain wiring of pixel also becomes complicated, shown in Fig. 2-1 and Fig. 2-2.In addition, the voltage driven type image element circuit can only compensate usually because the circuit performance that brings of threshold voltage difference is degenerated, and to such as temperature, the influence that the carrier mobility difference is brought is powerless.
Than the voltage driven type image element circuit, the current drive-type dot structure can be good at compensating threshold voltage, mobility and Temperature Influence; Simultaneously, because OLED is the current mode device, its luminosity is directly proportional with electric current by OLED, so adopts current drives more accurate brightness to OLED to control.The structure of a kind of current mirror type current-driven pixel unit that prior art adopts as Fig. 3-1 with shown in Fig. 3-2, this structure can well the compensation pixel circuit in because the degeneration of output currents that factor causes such as device parameters and temperature.But its main problem is the overlap capacitance that exists between switching transistor stray capacitance and the signal wire, make the current drive-type circuit chronic to the programming of pixel cell under the low little current conditions of gray scale, this has seriously restricted the application of current drive-type pixel cell in large tracts of land, high-resolution show.
Summary of the invention
The main technical problem to be solved in the present invention is, a kind of source electrode drive circuit and display device are provided, can be on the basis of control of the high precision GTG of holding current type dot structure and high stability advantage, accelerate its current programmed speed, thereby satisfy the needs that high Resolution and Large Size shows.
For this reason, the present invention proposes a kind of source electrode drive circuit, comprising:
The source current generation module is used to produce the data current signal;
Clock signal generating module is used for clocking;
The current/voltage modular converter, to be used for described data current conversion of signals be corresponding data voltage signal and output to corresponding data signal line;
Switch is selected module, and the data current signal that is used under the control of described clock signal described source current generation module being exported is transferred to described current/voltage modular converter or directly is transferred to corresponding data signal line.
Further, described clock signal each work period be divided into last interval and the back one interval; Described switch selects module under the control of described last interval clock signal the data current signal of described source current generation module output to be transferred to described current/voltage modular converter, is converted to voltage signal and is transferred to corresponding data signal line; Data current signal with described source current generation module output under the control of described back one interval clock signal directly is transferred to corresponding data signal line.
Among a kind of embodiment, described switch selects module to comprise first switch selection transistor and second switch selection transistor; Described first switch selects transistor and second switch to select the transistorized control utmost point to be connected respectively to the clock signal output terminal of described clock signal generating module, described first switch selects the transistorized first current lead-through utmost point to connect the data current signal output part of described source current generation module, described first switch selects the transistorized second current lead-through utmost point to be connected to the input end of current/voltage modular converter, described second switch selects the transistorized first current lead-through utmost point to connect the data current signal output part of described source current generation module, and described second switch selects the transistorized second current lead-through utmost point to be used to be connected to described corresponding data signal line.
Among the another kind of embodiment, described current/voltage modular converter comprises: the electric current change unit is used to finish the corresponding conversion to described data current signal; Signal conversion unit, being used for the data current conversion of signals after the conversion is corresponding data voltage signal; The source follower unit is used for described data voltage signal is exported.
Described electric current changes unit pack and draws together: the first transistor, transistor seconds, the 3rd transistor, the 4th transistor; The described the 3rd transistorized first current lead-through utmost point and its control utmost point are connected to described switch and select module, and the second current lead-through utmost point extremely links to each other with first current lead-through of described the first transistor; The described the 4th transistorized control utmost point is connected to the described the 3rd transistorized control utmost point, and the first current lead-through utmost point is connected to first power supply, and the second current lead-through utmost point is connected to the first current lead-through utmost point of described transistor seconds; The control utmost point of described the first transistor extremely links to each other with its first current lead-through, and the second current lead-through utmost point is connected to described switch selection module with the second current lead-through utmost point of described transistor seconds; The control utmost point of described transistor seconds is connected to the control utmost point of described the first transistor.
Described signal conversion unit comprises the 5th transistor, and described the 5th transistor controls utmost point extremely links to each other with its first current lead-through and is connected to described electric current change unit, and the second current lead-through utmost point links to each other with second source.
Described source follower unit comprises the 6th transistor and resistance, the described the 6th transistorized control utmost point is connected to described electric current change unit, the first current lead-through utmost point links to each other with described first power supply, the second current lead-through utmost point is connected to an end of described resistance and exports described data voltage signal, and the other end of described resistance links to each other with described second source.
When above-mentioned the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the 6th transistor are N type metal-oxide-semiconductor, described first power supply is for providing the power lead of power supply, and described second source is a ground wire.
The present invention correspondingly provides a kind of display device, comprises gate driver circuit and a plurality of image element circuit, and a plurality of gate drive signal output terminals of described gate driver circuit link to each other with a plurality of described image element circuits respectively; Described display device also comprises: aforesaid source electrode drive circuit, the output terminal of a plurality of data signal lines of described source electrode drive circuit links to each other with a plurality of described image element circuits respectively, by voltage signal or the current signal that transmits on the described data signal line described image element circuit is carried out combination drive, to realize acceleration to described image element circuit.
Among a kind of embodiment, described image element circuit comprises: first switching transistor, second switch transistor, electric capacity, first driving transistors, second driving transistors and light emitting diode; The control utmost point of described first switching transistor is connected to described drive element of the grid, and the first current lead-through utmost point is connected to described switch and selects module, and the second current lead-through utmost point is connected to the first current lead-through utmost point of described first driving transistors; The transistorized control utmost point of described second switch is connected to described drive element of the grid, the first current lead-through utmost point is connected to described switch and selects module, and the second current lead-through utmost point is connected to the control utmost point of described first driving transistors and the control utmost point of described second driving transistors; The second current lead-through utmost point of described first driving transistors is connected to the anode of described light emitting diode; The first current lead-through utmost point of described second driving transistors is connected to first power supply, and the described second current lead-through utmost point is connected to the anode of described light emitting diode; The negative electrode of described light emitting diode is connected to second source; First electrode of described electric capacity is connected to described first power supply, and second electrode is connected to the control utmost point of described first driving transistors.
Beneficial effect of the present invention is: at first pass through the current/voltage modular converter by be implemented in data programing stage source electrode data current by switch control module, be converted to the stray capacitance of data current value corresponding voltage signal and refresh, make that the current potential on the data line is adjusted near desired value in a very short time data line; The turn-off current voltage transformation module is directly programmed data current to current programmed pixels unit afterwards, has accelerated the program speed of current drive-type Organnic electroluminescent device; By the combination drive of voltage and current signal, realize acceleration, thereby make the present invention can have current drive-type Organnic electroluminescent device programming precision height, the advantage of good stability simultaneously current programmed type AMOLED image element circuit.
Description of drawings
Fig. 1 is a kind of two TFT image element circuit synoptic diagram;
Fig. 2-the 1st, a kind of synoptic diagram of voltage driven type image element circuit;
Fig. 2-the 2nd, the sequential chart of voltage driven type image element circuit shown in Fig. 2-1;
Fig. 3-the 1st, a kind of synoptic diagram of current drive-type image element circuit;
Fig. 3-the 2nd, the sequential chart of current drive-type image element circuit shown in Fig. 3-1;
Fig. 4 is the structural representation of source electrode drive circuit embodiment of the present invention;
Fig. 5 is the electrical block diagram of source electrode drive circuit embodiment of the present invention;
Fig. 6 is the sequential chart of source electrode drive circuit shown in Figure 4;
Fig. 7 is the structural representation of display device embodiment of the present invention;
Fig. 8 is the electrical block diagram of display device embodiment of the present invention.
Embodiment
In conjunction with the accompanying drawings the present invention is described in further detail below by embodiment.
Among following each embodiment, the transistorized control utmost point corresponds to the grid of TFT, and the first current lead-through utmost point and the second current lead-through utmost point can reciprocity, promptly, first current lead-through extremely can be that source electrode also can be drain electrode, and accordingly, second current lead-through extremely can be that to drain also can be source electrode.In addition, be that example describes with the luminescent device for Organic Light Emitting Diode OLED among the embodiment.
As shown in Figure 4 and Figure 5, source electrode drive circuit embodiment comprises: source current generation module, clock signal generating module, switch are selected module, current/voltage modular converter; Wherein, the source current generation module provides data current signal I
DataClock signal generating module provides the clock signal of gauge tap selected cell work, this clock signal a work period as be divided into last interval and one interval two little stages of back in the pixel programming stage, in the present embodiment, last interval is that an interval is low level behind the high level; Switch selects module to be used for being connected according to clock signal Controlling Source electrode current generation module and current/voltage modular converter, when clock signal is in last interval, the data current signal is transferred to the current/voltage modular converter, be corresponding data voltage signal with the data current conversion of signals and output on the corresponding data signal line by the current/voltage modular converter, when clock signal is in one interval, back, the data current signal is directly outputed on the corresponding data signal line; It is corresponding data voltage signal that the current/voltage modular converter is used for the data current conversion of signals, and outputs on the corresponding data signal line.
In the current/voltage modular converter, the data current value of input can be exported the data voltage value that satisfies certain relation with data current, and this module comprises in the present embodiment: the electric current change unit is used to finish the corresponding conversion to the data current signal; Signal conversion unit, being used for the data current conversion of signals after the conversion is corresponding data voltage signal; The source follower unit is used for the data voltage signal is exported.In a further embodiment, the current/voltage modular converter can also adopt other modes, the module with current/voltage translation function for example of the prior art.
Wherein, the electric current of present embodiment variation unit pack is drawn together: the first transistor M1, transistor seconds M2, the 3rd transistor M3, the 4th transistor M4; Wherein, the drain electrode of the 3rd transistor M3 and its grid are connected to switch and select module, and source electrode links to each other with the drain electrode of the first transistor M1; The grid of the 4th transistor M4 is connected to the grid of the 3rd transistor M3, and drain electrode is connected to first power supply with certain potentials, and source electrode is connected to the drain electrode of transistor seconds M2; The grid of the first transistor M1 links to each other with its drain electrode, and source electrode is connected to switch selection module with the source electrode of transistor seconds M2; The grid of transistor seconds M2 is connected to the grid of the first transistor M1.M1 in the present embodiment, M2, M3 and M4 pipe constitute the common-source common-gate current mirror structure in order to finish the linear transformation to the data electric current; In a further embodiment, electric current changes unit further and adopts other modes, and for example of the prior art have a unit that data current is carried out linear transformation function.
Signal conversion unit comprises the 5th transistor M5, is used to realize the conversion of electric current and voltage signal, and its grid is connected to the electric current change unit with its drain electrode, and its source electrode links to each other with the second source with certain potentials; Signal conversion unit can also adopt other modes in a further embodiment, and for example of the prior art have a unit that current signal is converted to voltage signal.
The source follower unit comprises the 6th transistor and resistance R
s, M6 pipe and R
sThe output of the data voltage after the source follower realization that constitutes is finished conversion; The grid of the 6th transistor M6 is connected to the electric current change unit, and drain electrode links to each other with first power supply, and source electrode is connected to resistance R
sAn end and export described data voltage signal, resistance R
sThe other end link to each other with second source; The source follower unit further adopts other modes in a further embodiment, the unit with output data voltage function for example of the prior art.
Above-mentioned the first transistor M1, transistor seconds M2, the 3rd transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6 are N type metal-oxide-semiconductor in the present embodiment, and this moment, first power supply was for providing the power lead V of power supply
DD, second source is a ground wire.M1, M2, M3, M4, M5, M6 also can be P type metal-oxide-semiconductors in other embodiments, the connection between each components and parts then correspondingly changes with the different of P raceway groove polarity according to the N raceway groove in the circuit at this moment, those skilled in the art can make a change according to prior art, and no longer accompanying drawing is given unnecessary details herein.
In the present embodiment, switch selects module to comprise two transistors: first switch selects transistor T 1 and second switch to select transistor T 2, wherein, first switch selects the grid of transistor T 1 to select the grid of transistor T 2 all to link to each other with drain electrode with drain electrode and second switch, and be connected respectively to source current generation module and clock signal generating module together, first switch selects the source electrode of transistor T 1 to be connected to the current/voltage modular converter, and second switch selects the source electrode of transistor T 2 to export described data current signal when corresponding clock signals arrives.
In the present embodiment, it is N type metal-oxide-semiconductor or TFT pipe that first switch is selected transistor T 1, and it is P type metal-oxide-semiconductor or TFT pipe that second switch is selected transistor T 2, and this moment, T1 and T2 were complementary type, and both grids link to each other with the CLK that clock signal generating circuit produces.Only need one tunnel control signal; Switch selects module can also adopt other modes in a further embodiment, and for example T1 is identical with the type of device of T2, just needs the control signal of two-way complementation respectively T1 and T2 to be controlled; Adopt for another example that other have the circuit structure of switch selection function in the prior art.
Below in conjunction with signal timing diagram shown in Figure 6 source electrode drive circuit embodiment shown in Figure 4 is further described.The clock signal of clock signal generating module is in a work period, promptly be divided into last interval and one interval, back in the data programing stage of a pixel, the data programing stage that present embodiment claims to be in last interval is the driven stage, and the data programing stage that claims to be in one interval, back is the current drives stage.
In the driven stage, clock signal clk is in last interval (as the high level interval among Fig. 6), and this moment, first switch was selected transistor T 1 pipe conducting, and second switch selects transistor T 2 pipes to turn-off the data current signal I of source current generation module
DataFlow to current-to-voltage converting circuit from the T1 pipe;
I
DataThrough the common-source common-gate current mirror that constitutes by M1, M2, M3 and M4 pipe.
The drain-source voltage I of M2 pipe
DS=KI
Data, K=(W/L) wherein
M2/ (W/L)
M1, W and L are respectively the width and the length of raceway groove.
The drain electrode of the M5 pipe that the source electrode of M2 pipe is connected with diode links to each other.
Because the M5 that diode connects pipe works in the saturation region all the time, its drain-source current can be provided by following formula: I
M5=1/2 β V
M5 2
β is by the oxide layer electric capacity of M5 pipe in the formula, and the breadth length ratio of carrier mobility and M5 pipe determines, V
M5Difference for M5 pipe gate source voltage and threshold voltage.Therefore
Realization is calculated the extraction of square root of data electric current.
The M6 pipe is formed source follower with V with RS
M5Voltage is by V
OUTOutput realizes the conversion of current and voltage signals.Value by control K and β can realize V
OUTValue equate with the needed magnitude of voltage of data current corresponding data lines.
Because be voltage signal, so this charge and discharge process can finish in very short time, thereby realizes the fast programming to data line.
In the current drives stage, this moment, the CLK signal of clock signal generating module was in one interval (as the low level interval among Fig. 6), back, and the T1 pipe is turned off, and the T2 pipeline is logical, at this moment data current I
DataTo no longer pass through the current/voltage modular converter, but directly enter the image element circuit of display device, the image element circuit of current gating will be carried out current drives, realize current programmed by corresponding data line.
These two main differences of stage are signal type differences of transmitting on the data signal line, the voltage-programming stage mainly drives image element circuit by a constant voltage source, and the current programmed stage then is by a constant current source image element circuit to be driven.Compare with conventional type of drive, in the glow phase of image element circuit, the effect of these two kinds of drive patterns is identical, but in the data programing stage, the source electrode drive circuit embodiment that adopts the present invention to propose can realize the acceleration to pixel programming.
To sum up, compare with current current drive-type source electrode drive circuit, the advantage of present embodiment is, at first the stray capacitance of working voltage data signal line refreshes, and then pixel cell is programmed with data current, accelerated the program speed of current drive-type Organnic electroluminescent device, the present embodiment circuit still has the programming precision height of current drive-type source electrode drive circuit, the advantage of good stability simultaneously; In addition, another advantage of present embodiment is still to use the source current of existing current drive-type Organnic electroluminescent device to produce chip, has only added the simple peripheral circuit of part on this basis, does not need independent design driven chip, the formation of driving circuit is simple, the reliability height.
The foregoing description can be applicable in the display device, and this display device comprises: gate driver circuit, the OLED display screen of being made up of a plurality of image element circuits and the source electrode drive circuit matrix that is made of source electrode drive circuit.Wherein, a plurality of gate drive signal output terminals of gate driver circuit link to each other with a plurality of image element circuits respectively; Source electrode drive circuit then adopts above-mentioned source electrode drive circuit embodiment, and the output terminal of its a plurality of data signal lines links to each other with a plurality of image element circuits respectively.In another kind of display device embodiment, the source electrode drive circuit matrix comprises unified source current generation module and clock signal generating module, a plurality of current/voltage modular converter, reaches and the corresponding a plurality of switches selection modules of each current/voltage modular converter; Wherein, each current/voltage modular converter and the switch corresponding with it select module and source current generation module to constitute a source electrode drive circuit with clock signal generating module, as shown in Figure 7, in source electrode drive circuit, the clock signal that switch selects module to produce according to clock signal generating module, the data current signal of source current generation module output is transferred on the corresponding data signal line via the current/voltage modular converter, perhaps directly be transferred on the corresponding data signal line, data signal line is connected to a plurality of image element circuits in the OLED display screen, by voltage signal or the current signal that transmits on the data signal line described image element circuit is carried out combination drive, to realize acceleration to described image element circuit; Switch selects the function and the circuit structure of module, clock signal generating module, current/voltage modular converter, source current generation module to repeat no more with reference to aforementioned source electrode drive circuit embodiment herein.Among the embodiment, SEL is the scanning voltage signal that is provided by drive element of the grid.
Fig. 8 is the physical circuit embodiment synoptic diagram of display device shown in Figure 7, and wherein, source electrode drive circuit, gate driver circuit etc. repeat no more as hereinbefore herein.Single image element circuit comprises in the present embodiment: the first switching transistor SW1, second switch transistor SW2, capacitor C
S, the first driving transistors DR1, second driving transistors DR2 and the OLED.In the present embodiment, switching transistor SW1, SW2 and driving transistors DR1, DR2 are the thin film transistor (TFT)s that contains amorphous silicon, and all are NMOS (n NMOS N-channel MOS N) transistors.
The grid of switching transistor SW1 is connected to sweep trace SEL, and source electrode is connected to data line Data, and drain electrode is connected to the drain electrode of driving transistors DR1.The grid of switching transistor SW2 is connected to sweep trace SEL, and source electrode is connected to data line Data, and drain electrode is connected to the grid of driving transistors DR1, DR2.The drain electrode of driving transistors DR1 is connected to the source electrode of switching transistor SW1, and grid is received the drain electrode of switching transistor SW2, and source electrode is connected to the anode electrode of OLED.The drain electrode of driving transistors DR2 is connected on the power lead VDD, and grid is connected to the drain electrode of switching transistor SW2, and source electrode is connected to the anode electrode of OLED.The anode electrode of organic electroluminescent LED OLED is connected to the source electrode of driving transistors DR1, DR2, and cathode electrode is connected to ground wire grounded.Capacitor C
SFirst electrode be connected to the source electrode of switching transistor SW2 and the grid of driving transistors DR1, DR2, second electrode is connected on the power lead VDD.
Below in conjunction with Fig. 6, the principle with image element circuit shown in Figure 8 is described.
In the data programing stage, this stage is because clock signal generating module is divided into driven and two stages of current drives to the control of current/voltage modular converter; In the driven stage, finish discharging and recharging on data signal line and the capacitor, in the current drives stage, realize precision programming to pixel cell by electric current.In the data programing stage, because of the SEL signal is that height makes switching transistor SW1, SW2 conducting, circuit at first enters the driven stage, this moment data current I
DataBe converted into data voltage through the current/voltage modular converter, and be output to sweep trace, finish, also finish holding capacitor C simultaneously the discharging and recharging of stray capacitance on the data line and overlap capacitance
SPreliminary charge and discharge process.Because be that voltage drives at this moment, therefore, charging and discharging process can be finished very soon.Afterwards, circuit enters the current programmed stage, the data current I that source electrode drive circuit provides under clock signal control
DataProcess switching transistor SW2 is to capacitor C
SAccurately discharge and recharge.Along with the carrying out of charging, the grid potential of driving transistors DR1 improves gradually, and DR1 begins conducting, and data current begins to flow into OLED through DR1.In the current drives stage of data programing, whole data currents will flow to OLED by driving transistors DR1.
In glow phase, switching transistor SW1, SW2 are turn-offed by the low signal of selecting, at this moment capacitor C
SLast charge stored keeps driving transistors DR2 to keep conducting in this stage, and driving OLED is luminous.This moment is by the electric current of OLED: I
OLED=κ I
Data, wherein K is by the breadth length ratio decision of driving tube DR1 and DR2.Realized the control of data current, thereby realized programming requirement the OLED luminosity to the OLED electric current.
Above content be in conjunction with concrete embodiment to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. a source electrode drive circuit is characterized in that, comprising:
The source current generation module is used to produce the data current signal;
Clock signal generating module is used for clocking;
The current/voltage modular converter, to be used for described data current conversion of signals be corresponding data voltage signal and output to corresponding data signal line;
Switch is selected module, and the data current signal that is used under the control of described clock signal described source current generation module being exported is transferred to described current/voltage modular converter or directly is transferred to corresponding data signal line.
2. source electrode drive circuit as claimed in claim 1 is characterized in that, each work period of described clock signal is divided into last interval and one interval, back; Described switch selects module under the control of described last interval clock signal the data current signal of described source current generation module output to be transferred to described current/voltage modular converter, is converted to voltage signal and is transferred to corresponding data signal line; Data current signal with described source current generation module output under the control of described back one interval clock signal directly is transferred to corresponding data signal line.
3. source electrode drive circuit as claimed in claim 2 is characterized in that, described switch selects module to comprise first switch selection transistor and second switch selection transistor; Described first switch selects transistor and second switch to select the transistorized control utmost point to be connected respectively to the clock signal output terminal of described clock signal generating module, described first switch selects the transistorized first current lead-through utmost point to connect the data current signal output part of described source current generation module, described first switch selects the transistorized second current lead-through utmost point to be connected to the input end of current/voltage modular converter, described second switch selects the transistorized first current lead-through utmost point to connect the data current signal output part of described source current generation module, and described second switch selects the transistorized second current lead-through utmost point to be used to be connected to described corresponding data signal line.
4. as each described source electrode drive circuit in the claim 1 to 3, it is characterized in that described current/voltage modular converter comprises:
The electric current change unit is used to finish the corresponding conversion to described data current signal;
Signal conversion unit, being used for the data current conversion of signals after the conversion is corresponding data voltage signal;
The source follower unit is used for described data voltage signal is exported.
5. source electrode drive circuit as claimed in claim 4 is characterized in that, described electric current changes unit pack and draws together: the first transistor, transistor seconds, the 3rd transistor, the 4th transistor;
The described the 3rd transistorized first current lead-through utmost point and its control utmost point are connected to described switch and select module, and the second current lead-through utmost point extremely links to each other with first current lead-through of described the first transistor;
The described the 4th transistorized control utmost point is connected to the described the 3rd transistorized control utmost point, and the first current lead-through utmost point is connected to first power supply, and the second current lead-through utmost point is connected to the first current lead-through utmost point of described transistor seconds;
The control utmost point of described the first transistor extremely links to each other with its first current lead-through, and the second current lead-through utmost point is connected to described switch selection module with the second current lead-through utmost point of described transistor seconds;
The control utmost point of described transistor seconds is connected to the control utmost point of described the first transistor.
6. source electrode drive circuit as claimed in claim 5, it is characterized in that, described signal conversion unit comprises the 5th transistor, and described the 5th transistor controls utmost point extremely links to each other with its first current lead-through and is connected to described electric current change unit, and the second current lead-through utmost point links to each other with second source.
7. source electrode drive circuit as claimed in claim 6, it is characterized in that, described source follower unit comprises the 6th transistor and resistance, the described the 6th transistorized control utmost point is connected to described electric current change unit, the first current lead-through utmost point links to each other with described first power supply, the second current lead-through utmost point is connected to an end of described resistance and exports described data voltage signal, and the other end of described resistance links to each other with described second source.
8. source electrode drive circuit as claimed in claim 7, it is characterized in that, when described the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the 6th transistor are N type metal-oxide-semiconductor, described first power supply is for providing the power lead of power supply, and described second source is a ground wire.
9. display device, comprise gate driver circuit and a plurality of image element circuit, a plurality of gate drive signal output terminals of described gate driver circuit link to each other with a plurality of described image element circuits respectively, it is characterized in that also comprising: as each described source electrode drive circuit among the claim 1-8, the output terminal of a plurality of data signal lines of described source electrode drive circuit links to each other with a plurality of described image element circuits respectively, by voltage signal or the current signal that transmits on the described data signal line described image element circuit is carried out combination drive, to realize acceleration to described image element circuit.
10. display device as claimed in claim 9 is characterized in that, described image element circuit comprises: first switching transistor, second switch transistor, electric capacity, first driving transistors, second driving transistors and light emitting diode;
The control utmost point of described first switching transistor is connected to described drive element of the grid, and the first current lead-through utmost point is connected to described switch and selects module, and the second current lead-through utmost point is connected to the first current lead-through utmost point of described first driving transistors;
The transistorized control utmost point of described second switch is connected to described drive element of the grid, the first current lead-through utmost point is connected to described switch and selects module, and the second current lead-through utmost point is connected to the control utmost point of described first driving transistors and the control utmost point of described second driving transistors;
The second current lead-through utmost point of described first driving transistors is connected to the anode of described light emitting diode;
The first current lead-through utmost point of described second driving transistors is connected to first power supply, and the described second current lead-through utmost point is connected to the anode of described light emitting diode;
The negative electrode of described light emitting diode is connected to second source;
First electrode of described electric capacity is connected to described first power supply, and second electrode is connected to the control utmost point of described first driving transistors.
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| CN102298893B (en) | 2014-09-17 |
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