CN102654973B - Pixel circuit and drive method thereof as well as display panel - Google Patents

Pixel circuit and drive method thereof as well as display panel Download PDF

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Publication number
CN102654973B
CN102654973B CN201110233149.0A CN201110233149A CN102654973B CN 102654973 B CN102654973 B CN 102654973B CN 201110233149 A CN201110233149 A CN 201110233149A CN 102654973 B CN102654973 B CN 102654973B
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described
switching transistor
grid
line
signal line
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CN201110233149.0A
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CN102654973A (en
Inventor
祁小敬
谭文
吴博
高永益
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Abstract

The invention discloses a pixel circuit and relates to the technical field of organic light emitting display. The grid of a first switch transistor of the circuit is connected with a grid line, the source of the first switch transistor is connected with a data line and the drain of the first switch transistor is connected with a first end of a first storage capacitor; the grid of a third switch transistor is connected with the grid line, the source of the third switch transistor is connected with a power line and the drain of the third switch transistor is connected with a first end of a second storage capacitor; the grid of a drive transistor is connected with the second end of the first storage capacitor and a second end of a second storage capacitor, the source of the drive transistor is connected with the first end of the second storage capacitor and the cathode of an OLED (Organic Light Emitting Display) device so as to provide a drive current for the OLED device, and the anode of the OLED device is connected with the power line. The invention further discloses a drive method and an OLED panel. According to the invention, by compensating the drift of the threshold voltage of the drive transistor, the uniformity of the current flowing through the OLED device is improved, and the display effect is enhanced.

Description

Image element circuit and driving method thereof, display panel

Technical field

The present invention relates to organic light emitting display technical field, particularly a kind of image element circuit and driving method thereof, display panel.

Background technology

Active matrix organic light-emitting diode (AMOLED) panel (Active Matrix/Organic Light Emitting Diode, AMOLED) can luminously be by driving Thin Film Transistor (TFT) (Thin Film Transistor, TFT) electric current producing in the time of state of saturation drives, because while inputting identical gray scale voltage, different critical voltages can produce different drive currents, causes the inconsistency of electric current.The non-constant of homogeneity of Vth on low temperature polycrystalline silicon technology (Low Temperature Poly-silicon, LTPS) processing procedure, Vth also has drift simultaneously, and therefore, traditional 2T1C circuit brightness uniformity is very poor.

Fig. 1 is traditional 2 TFT transistors of employing, the voltage driven type image element circuit structure (2T1C) of 1 electric capacity composition.Wherein switch transistor T 2 arrives the voltage transmission on data line the grid of driving tube T1, this data voltage is converted into corresponding electric current supply OLED device by driving tube T1, in the time of normal work, driving tube T1 should, in saturation region, provide steady current within the sweep time of a line.Its electric current can be expressed as:

I OLED = 1 2 μ n · C OX · W L · ( V data - V oled - V thn ) 2

Wherein μ nfor carrier mobility, C oXfor gate oxide electric capacity, W/L is transistor breadth length ratio, V datafor data voltage, V oledfor OLED operating voltage, for all pixel cells are shared, V thnfor the threshold voltage of transistor T 1.From above formula, if the V between different pixels unit thndifference, electric current there are differences.If the V of pixel thndrift about in time, may cause first after-current difference, cause ghost.And because OLED device heterogeneity causes OLED operating voltage difference, also can cause current difference.Finally can cause brightness uniformity very poor, display effect is bad.

Summary of the invention

(1) technical matters that will solve

The technical problem to be solved in the present invention is: the how accurately threshold voltage shift of compensation for drive transistor, and to control the homogeneity of the electric current that flows through OLED.

(2) technical scheme

For solving the problems of the technologies described above, the invention provides a kind of image element circuit, comprise: grid line, data line, power lead, first signal line, secondary signal line, earthing pole, driving transistors, the first switching transistor, second switch transistor, the 3rd switching transistor, the 4th switching transistor, the first memory capacitance, the second memory capacitance and OLED device

The grid of described the first switching transistor connects described grid line, and source electrode connects described data line, and drain electrode connects the first end of the first memory capacitance;

The grid of described the 3rd switching transistor connects described grid line, and source electrode connects described power lead, and drain electrode connects the first end of described the second memory capacitance;

The grid of described driving transistors connects the second end of described the first memory capacitance and the second end of the second memory capacitance, source electrode connects the first end of described the second memory capacitance and the negative electrode of described OLED device, be used to described OLED device that drive current is provided, power lead described in described OLED device anodic bonding;

Described second switch transistor is used for according to the grid of driving transistors and the break-make of drain electrode described in described first signal line traffic control, and described the 4th switching transistor is used for according to the drain electrode of driving transistors and the break-make of described earthing pole described in described secondary signal line traffic control.

Wherein, the transistorized grid of described second switch connects first signal line, and source electrode connects the grid of described driving transistors, and drain electrode connects the drain electrode of described driving transistors.

Wherein, the grid of described the 4th switching transistor connects secondary signal line, and source electrode connects earthing pole, and drain electrode connects the drain electrode of described driving transistors.

Wherein, described driving transistors, the first switching transistor, second switch transistor, the 3rd switching transistor and the 4th switching transistor are P type TFT.

The present invention also provides the driving method of the image element circuit described in a kind of above-mentioned any one, comprises the following steps:

S1: apply respectively low-voltage to grid line, first signal line and secondary signal line, the first switching transistor, second switch transistor, the 3rd switching transistor, the 4th switching transistor described in conducting, apply high voltage to data line, make the described driving transistors state that reaches capacity;

S2: apply a high voltage to described secondary signal line, turn-off described the 4th switching transistor, the first memory capacitance electric discharge, makes the second memory capacitance charge to the threshold voltage of described driving transistors;

S3: apply a high voltage to described first signal line, turn-off described second switch transistor, apply a low-voltage to described data line;

S4: apply a high voltage to described grid line, turn-off described the first switching transistor and the 3rd switching transistor, apply a low-voltage to described secondary signal line, the 4th switching transistor described in conducting, utilizes the voltage that is stored in described the second memory capacitance to drive described OLED device luminous.

The present invention also provides a kind of display panel, comprises the image element circuit described in above-mentioned any one.

Wherein, described image element circuit is formed on array base palte, is provided with many data lines and grid line on described array base palte, and described many data lines and grid line define multiple described image element circuits; Described array base palte also comprises driving chip, is used to described grid line, data line, first signal line and secondary signal line that clock signal is provided, for power lead provides power supply signal.

(3) beneficial effect

Effectively compensate the heterogeneity of the threshold voltage of P type TFT driving tube by image element circuit of the present invention and driving method thereof, improved the homogeneity of the electric current that flows through OLED, reached better display effect.

Brief description of the drawings

Fig. 1 is 2T1C image element circuit structure schematic diagram of the prior art;

Fig. 2 is a kind of image element circuit structure schematic diagram of the embodiment of the present invention;

Fig. 3 is the clock signal figure that drives circuit in Fig. 2;

Fig. 4 is the equivalent circuit diagram in each stage in circuit working process in Fig. 2.

Embodiment

Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.

Embodiment 1

In the present embodiment, adopt 5T2C circuit by compensation Vth, make the I=K (Vgs-Vth) of driving tube 2irrelevant with the threshold voltage vt h of driving transistors, reach that to flow through the electric current of OLED consistent, improve homogeneity.Specifically as shown in Figure 2, the image element circuit of the present embodiment comprises: grid line SCAN, data line DATA, power lead V, first signal line CR1, secondary signal line CR2, earthing pole GND, the first switching transistor T1, second switch transistor T 2, the 3rd switching transistor T3, the 4th switching transistor T4, driving transistors DTFT, the first memory capacitance C1, the second memory capacitance C2 and OLED device.Wherein, 5 transistors are all P transistor npn npn.

The grid of the first switching transistor T1 connects grid line SCAN, source electrode connection data line DATA, drain electrode connects the first end of the first memory capacitance C1, at preliminary filling and compensated stage, provides the voltage Vdata of data line DATA according to the control signal of grid line SCAN to the first memory capacitance C1.The grid of the 3rd switching transistor T3 connects grid line SCAN, source electrode connecting power line V, and drain electrode connects the first end of the second memory capacitance C2, at preliminary filling and compensated stage, provides supply voltage VDD according to the control signal of grid line SCAN to the second memory capacitance C2.The grid of driving transistors DTFT connects the second end of the first memory capacitance C1 and the second end of the second memory capacitance C2, source electrode connects the first end of the second memory capacitance C2 and the negative electrode of OLED device, be used to OLED device that drive current is provided, OLED device anodic bonding power lead V.The first memory capacitance C1 discharges by driving transistors DTFT in the time of compensated stage, and making the voltage between A, B point is the threshold voltage of driving transistors DTFT, and now, the voltage of the second memory capacitance C2 is also the threshold voltage of driving transistors DTFT.Second switch transistor T 2 is for controlling the grid of driving transistors DTFT and the break-make of drain electrode according to first signal line CR1, in the present embodiment, the grid of second switch transistor T 2 connects first signal line CR1, source electrode connects the grid of driving transistors DTFT, and drain electrode connects the drain electrode of driving transistors DTFT.The 4th switching transistor T4 is for controlling the drain electrode of driving transistors DTFT and the break-make of earthing pole GND according to secondary signal line CR2, in the present embodiment, the grid of the 4th switching transistor T4 connects secondary signal line CR2, and source electrode connects earthing pole GND, and drain electrode connects the drain electrode of driving transistors DTFT.

The present embodiment also provides the driving method of above-mentioned image element circuit.As shown in Figure 3, comprise (a)~(d) four-stage for driving the clock signal figure of this circuit, can finding out.

In the stage (a), its equivalent circuit diagram is as shown in (a) in Fig. 4.The signal of the signal of grid line SCAN, the signal of first signal line CR1, secondary signal line CR2 is low-voltage, the first switching transistor T1, second switch transistor T 2, the 3rd switching transistor T3, the 4th all conductings of switching transistor T4, the signal Vdata high input voltage Vh of data line DATA.Now, the voltage that A point voltage VA is GND, B point voltage VB is the voltage VDD of power lead V, C point voltage VC is Vh, the gate source voltage Vgs=VAB=-VDD of driving transistors DTFT, much smaller than Vth, driving transistors DTFT is state of saturation.The voltage of the first memory capacitance C1 is Vh, and the voltage of the second memory capacitance C2 is VDD.

In the stage (b), its equivalent circuit diagram is as shown in (b) in Fig. 4.The signal of secondary signal line CR2 becomes high voltage, and the 4th switching transistor T4 closes, and disconnection A point is connected with GND's, and B point voltage remains the voltage VDD of power lead V.Now, driving transistors DTFT is equivalent to a diode, and the first memory capacitance C1 starts electric discharge by driving transistors DTFT, until VAB equals the threshold voltage vt h of driving transistors DTFT.A point voltage is VB+Vth=VDD+Vth, and the first memory capacitance C1 both end voltage is Vc1=VC-VA=Vh-Vth-VDD.

In the stage (c), its equivalent circuit diagram is as shown in (c) in Fig. 4.The signal of first signal line CR1 becomes high voltage, second switch transistor T 2 is closed, data line DATA signal writes low-voltage V1, because C point voltage sports V1 (V1 < Vh), A point voltage can drop to VDD+Vth+ (V1-Vh) × c1/ (c1+c2) by VDD+Vth, B point voltage is still VDD, now the second memory capacitance C2 both end voltage is Vc2=VA-VB=Vth+ (V1-Vh) × c1/ (c1+c2), and c1 and c2 are respectively the capacitance of the first memory capacitance C1 and the second memory capacitance C2.

It is as follows that A point voltage changes derivation: according to charge conservation,, at the electrode A point of the first memory capacitance C1 and the second memory capacitance C2 connection, there is no increase or the minimizing of electric charge.Suppose that, at stage (b), A point voltage is VA, VA=VDD+Vth; Stage (c) A point voltage is VA ', and B point voltage keeps VDD.

In the time of the stage (b), A point charge Q=c1 (Vh-VA)+c2 (VB-VA)=c1[Vh-(VDD+Vth)]+c2[VDD-(VDD+Vth)]=c1 (Vh-VDD-Vth)-c2 × Vth; In the time of the stage (c), A point charge Q=c1 (Vdata-VA ')+c2 (VB-VA ')=c1 (V1-VA ')+c2 (VDD-VA ')

From charge conservation, the A point charge of A point charge when stage (b) during with the stage (c) equates, that is: c1 (Vh-VDD-Vth)-c2 × Vth=c1 (V1-VA ')+c2 (VDD-VA '), A point voltage VA '=VDD+Vth+ (the V1-Vh) × c1/ (c1+c2) just can release the stage (c) time.

In the stage (d), its equivalent circuit diagram is as shown in (d) in Fig. 4.The signal of grid line SCAN becomes high voltage, and the signal of secondary signal line CR2 becomes low-voltage, and the first switching transistor T1, the 3rd switching transistor T3 close, the 4th switching transistor T4 conducting, driving transistors DTFT work, OLED device starts luminous, and B point voltage becomes VDD-Vth_oled.Due to the voltage maintenance effect of the second memory capacitance C2, keep the gate source voltage Vgs of driving transistors DTFT constant, corresponding A point voltage can become: Vth+ (V1-Vh) × c1/ (c1+c2)+VDD-Vth_oled, gate source voltage Vgs=VAB=Vth+ (the V1-Vh) × c1/ (c1+c2) of driving transistors 5, is the voltage of the second memory capacitance C2.By this voltage driving OLED device, the electric current that now flows through OLED device is: I=K (Vgs-Vth) 2=K[Vth+ (V1-Vh) × c1/ (c1+c2)-Vth) 2=K[(V1-Vh) × c1/ (c1+c2)] 2, it is luminous that this electric current I starts OLED, until next frame.Wherein WK=W/L × C × u, W is the width of driving transistors DTFT raceway groove, and L is the length of driving transistors DTFT raceway groove, and C is the electric capacity between driving transistors DTFT raceway groove and grid, and u is the carrier mobility of driving transistors DTFT raceway groove.

Formula by above-mentioned electric current I can be found out, does not wherein occur Vth, and it doesn't matter for the threshold voltage vt h of I and driving transistors DTFT.In addition, the electric current that flows through OLED in circuit is only relevant with data line voltage Vh, VI and the electric capacity of input, keeps driving transistors DTFT to be operated in saturation region, and drive current is not subject to power lead IR-Drop (internal resistance pressure drop) impact.Therefore, the image element circuit in the present embodiment can improve the homogeneity of electric current, reaches the even of brightness, improves display effect.

Embodiment 2

A kind of display panel is provided in the present embodiment, has comprised the image element circuit in embodiment 1, this image element circuit is formed on array base palte, is provided with many data lines and grid line on this array base palte, and many data lines and grid line define multiple above-mentioned image element circuits; Array base palte also comprises driving chip, is used to grid line, data line, first signal line and secondary signal line that clock signal is provided, for power lead provides power supply signal.

Above embodiment is only for illustrating the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.

Claims (7)

1. an image element circuit, comprise: grid line, data line, power lead, first signal line, secondary signal line, earthing pole, driving transistors, the first switching transistor, second switch transistor, the 3rd switching transistor, the 4th switching transistor, the first memory capacitance, the second memory capacitance and OLED device, it is characterized in that
The grid of described the first switching transistor connects described grid line, and source electrode connects described data line, and drain electrode connects the first end of the first memory capacitance;
The grid of described the 3rd switching transistor connects described grid line, and source electrode connects described power lead, and drain electrode connects the first end of described the second memory capacitance;
The grid of described driving transistors connects the second end of described the first memory capacitance and the second end of the second memory capacitance, source electrode connects the first end of described the second memory capacitance and the negative electrode of described OLED device, be used to described OLED device that drive current is provided, power lead described in described OLED device anodic bonding;
Described second switch transistor is used for according to the grid of driving transistors and the break-make of drain electrode described in described first signal line traffic control, and described the 4th switching transistor is used for according to the drain electrode of driving transistors and the break-make of described earthing pole described in described secondary signal line traffic control.
2. image element circuit as claimed in claim 1, is characterized in that, the transistorized grid of described second switch connects first signal line, and source electrode connects the grid of described driving transistors, and drain electrode connects the drain electrode of described driving transistors.
3. image element circuit as claimed in claim 1, is characterized in that, the grid of described the 4th switching transistor connects secondary signal line, and source electrode connects earthing pole, and drain electrode connects the drain electrode of described driving transistors.
4. the image element circuit as described in any one in claim 1~3, is characterized in that, described driving transistors, the first switching transistor, second switch transistor, the 3rd switching transistor and the 4th switching transistor are P type TFT.
5. a driving method for the image element circuit as described in any one in claim 1~4, comprises the following steps:
S1: apply respectively low-voltage to grid line, first signal line and secondary signal line, the first switching transistor, second switch transistor, the 3rd switching transistor, the 4th switching transistor described in conducting, apply high voltage to data line, make the described driving transistors state that reaches capacity;
S2: apply a high voltage to described secondary signal line, turn-off described the 4th switching transistor, the first memory capacitance electric discharge, makes the second memory capacitance charge to the threshold voltage of described driving transistors;
S3: apply a high voltage to described first signal line, turn-off described second switch transistor, apply a low-voltage to described data line;
S4: apply a high voltage to described grid line, turn-off described the first switching transistor and the 3rd switching transistor, apply a low-voltage to described secondary signal line, the 4th switching transistor described in conducting, utilizes the voltage that is stored in described the second memory capacitance to drive described OLED device luminous.
6. a display panel, is characterized in that, comprises the image element circuit described in any one in claim 1~4.
7. display panel as claimed in claim 6, is characterized in that, described image element circuit is formed on array base palte, is provided with many data lines and grid line on described array base palte, and described many data lines and grid line define multiple described image element circuits; Described array base palte also comprises driving chip, is used to described grid line, data line, first signal line and secondary signal line that clock signal is provided, for power lead provides power supply signal.
CN201110233149.0A 2011-08-15 2011-08-15 Pixel circuit and drive method thereof as well as display panel CN102654973B (en)

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