CN102291090A - Low-noise amplifier protection switch - Google Patents
Low-noise amplifier protection switch Download PDFInfo
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- CN102291090A CN102291090A CN2011101023990A CN201110102399A CN102291090A CN 102291090 A CN102291090 A CN 102291090A CN 2011101023990 A CN2011101023990 A CN 2011101023990A CN 201110102399 A CN201110102399 A CN 201110102399A CN 102291090 A CN102291090 A CN 102291090A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
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Abstract
The invention discloses a low-noise amplifier protection switch. A common end of the switch is connected to an antenna; a transmitting end of the switch is connected to a load; a receiving end of the switch is connected to a low-noise amplifier; the common end is connected to the transmitting end through at least one first group of diodes and is connected to the receiving end through at least one second group of diodes; and both the first group of diodes and the second group of diodes comprise parallel diodes. Through the switch, the problems of small power capacity and low reliability of the low-noise amplifier protection switch in the prior art are solved, so that the effect of improving the power capacity and the reliability is achieved.
Description
Technical field
The present invention relates to the communications field, in particular to a kind of low noise amplifier protection switch.
Background technology
The course of work of low noise amplifier protection switch is: as TDD (Time Division Duplex, when tdd systems) power amplifier is operated in the power amplifier emission state, the effect of this switch is that reception link LNA is isolated, and the radio signal transmission that makes reflected back is to the radio-frequency power load, this moment, switch played the effect of bypass RF high power, protection LNA, so the LNA protection switch of gaining the name; When the LNA accepting state, this switch isolation load, connect the LNA path this moment, finishes to receive and amplify.
As shown in Figure 1; in the prior art; be used in tdd systems (Time Division Duplex; abbreviation TDD) the LNA protection switch in is positioned at circulator 3 ports and LNA LNA (Low Noise Amplifier in circuit distributes; low noise amplifier) between, controlling radiofrequency signal from circulator 3 ports.Circulator 3 ports are a descending power reflection link and a public radio frequency mouth of up reception link; 1 port of circulator and amplifier PA (Power Amplifier; power amplifier) links to each other; 2 ports and antenna ANT (Antenna; antenna) link to each other, the LNA protection switch connects low noise amplifier LNA and load respectively.
At present, the switching circuit module and the device of the seriation of promising TDD power amplifier, the research and development of LNA unit on the market, the switching circuit module takies little, the employed medium substrate of PCB (Printed Circuit Board, printed circuit board) area and compares the common high advantage of pcb board material conductive coefficient.But its interior welds complex process connects with gold thread between internal components, so its power capacity is little, reliability is low, and cost is also higher simultaneously.
Summary of the invention
Main purpose of the present invention is to provide a kind of low noise amplifier protection switch, to solve the problem that LNA protection switch power capacity of the prior art is little and reliability is low.
According to an aspect of the present invention; a kind of low noise amplifier protection switch is provided; the common port of switch is connected to antenna; the transmitting terminal of switch is connected to load; the receiving terminal of switch is connected to low noise amplifier, and common port is connected to transmitting terminal by at least one first group of diode, and common port is connected to receiving terminal by at least one second group of diode; wherein, first group of diode and second group of diode include diode connected in parallel.
Further, the low noise amplifier protection switch also comprises: the 3rd diode, and an end of the 3rd diode is connected between second group of diode and the receiving terminal, and the other end of the 3rd diode is connected to ground.
Further, the number of diodes difference at least two first group of diodes.
Further, the number of diodes difference at least two second group of diodes.
Further, each first group of diode and second group of diode comprise at least two diodes.
Further, first group of diode is different with second group of number of diodes.
Further, link to each other by microstrip line between the diode.
Further, microstrip line length is less than 1/4 wavelength.
Further, diode is the plastic packaging PIN diode.
Further, the anode of the diode in the first group of diode that is connected with common port is connected with common port, the negative electrode of the diode in the first group of diode that is connected with transmitting terminal is connected with transmitting terminal, the anode of the diode in the second group of diode that is connected with common port is connected with common port, and the negative electrode of the diode in the second group of diode that is connected with receiving terminal is connected with receiving terminal.
By the present invention, adopt by parallel diode and reduce impedance, solve the problem that LNA protection switch power capacity of the prior art is little and reliability is low, and then reached the effect that improves power capacity and reliability.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 is according to LNA protection switch circuit connection diagram in the TDD power amplifier of correlation technique;
Fig. 2 is the preferred circuit figure according to the low noise amplifier protection switch of the embodiment of the invention;
Fig. 3 is the another kind of circuit diagram according to the low noise amplifier protection switch of the embodiment of the invention.
Embodiment
Hereinafter will describe the present invention with reference to the accompanying drawings and in conjunction with the embodiments in detail.Need to prove that under the situation of not conflicting, embodiment and the feature among the embodiment among the application can make up mutually.
In the present invention, use the diode switch that inserts in parallel must use 1/4 wavelength impedance conversion line separately, for adapting to the trend of power board miniaturization, so design from the series connected switches circuit of diode.
Embodiment 1
Fig. 2 is the preferred circuit figure according to the low noise amplifier protection switch of the embodiment of the invention; wherein; the common port A of the low noise amplifier protection switch among Fig. 2 is connected to antenna ANT; the transmitting terminal T of switch is connected to load D4; the receiving terminal R of switch is connected to low noise amplifier LNA; common port A is connected to transmitting terminal T by at least one first group of diode; common port A is connected to receiving terminal R by at least one second group of diode; wherein; first group of diode and second group of diode include diode connected in parallel; first group of diode comprises VD7 and VD8 in parallel, and second group of diode comprises VD9 and VD10 in parallel.Wherein,, then be connected in series between first group of diode, be connected in series between second group of diode if comprise a plurality of diode pairs.Preferably, the anode of the diode in the first group of diode that is connected with common port A is connected with common port A, the negative electrode of the diode in the first group of diode that is connected with transmitting terminal T is connected with transmitting terminal T, the anode of the diode in the second group of diode that is connected with common port A is connected with common port A, and the negative electrode of the diode in the second group of diode that is connected with receiving terminal R is connected with receiving terminal R.The anode that is VD7 and DU8 is connected with common port A, and negative electrode is connected with transmitting terminal T, and the anode of VD9 and DU10 is connected with common port A, and negative electrode is connected with receiving terminal R.
In this preferred embodiment, adopt by parallel diode and reduce impedance, solve the problem that LNA protection switch power capacity of the prior art is little and reliability is low, and then reached the effect that improves power capacity and reliability.
Preferably, the low noise amplifier protection switch also comprises: the 3rd diode VD13, and the end of the 3rd diode VD13 is connected between second group of diode and the receiving terminal R, and the other end of the 3rd diode VD13 is connected to ground.In this preferred embodiment, adopt the 3rd diode VD13 to improve the isolation of low noise amplifier protection switch circuit.In the present embodiment, because it is higher to insulated degree requirement that switch connects the branch road of LNA LNA, when antenna is opened a way, when the 3rd diode VD13 positively biased conducting, high-power signal arrive high power load, increased and LNA between isolation, simultaneously, can increase and decrease the number of the 3rd diode according to the height of isolation index request, use flexibly.
When the transmitting branch of switch was worked, promptly common port A from the radiofrequency signal of antenna opening LNA reflected back, was transferred to load end D4 by left branch road to the branch road conducting of transmitting terminal T, and this moment, the parallel diode of right branch road instead ended partially.Simultaneously, diode VD13 conducting, the radiofrequency signal that reflexes to right branch road from antenna opening LNA by VD13 to ground, thereby improved isolation, protected LNA.
When the receiving branch of switch was worked, promptly common port A was to the branch road conducting of receiving terminal R, and parallel diode VD9 and VD10 anode all obtain positive bias-voltage, and this moment, LNA LNA connected.The VD13 anode obtains reversed bias voltage and instead ends partially, and the purpose of this reversed bias voltage is to have guaranteed that the Insertion Loss of introducing drops to minimum.The parallel diode of transmitting branch (VD7, VD8) all instead ends partially.
Preferably, the number of diodes difference at least two first group of diodes.In this preferred embodiment, realize the identical function of different switching circuits by selecting different number of diodes for use, and improve the reliability and the power capacity of switching circuit.Certainly, the present invention is not limited thereto, and the number of diodes in each diode pair can be identical.
Preferably, the number of diodes difference at least two second group of diodes.In this preferred embodiment, realize the identical function of different switching circuits by selecting different number of diodes for use, and improve the reliability and the power capacity of switching circuit.Certainly, the present invention is not limited thereto, and the number of diodes in each diode pair can be identical.
Preferably, each first group of diode and second group of diode comprise at least two diodes.In this preferred embodiment, because switching circuit is compared with integrated circuit modules, employed diode radiating is relatively poor relatively, in order to guarantee the power delivery ability of antenna to link, need to reduce the Insertion Loss of diode,, meet the demands by the number in parallel that increases PIN diode for the Insertion Loss index of the switching circuit of having relatively high expectations, the using method in parallel of this a plurality of diodes can improve the reliability of switching circuit, the power capacity of raising switching circuit.
Preferably, first group of diode is different with second group of number of diodes.In this preferred embodiment, by increasing the right number of PIN diode in parallel in the circuit, uses that be cascaded of promptly many group diode connected in parallel can be controlled the number of use diode flexibly according to the requirement to the isolation index.Certainly, the present invention is not limited thereto, and the quantity of first group of diode and second group of diode can be identical.
Preferably, link to each other by microstrip line between the above-mentioned diode.In this preferred embodiment, because the loss (PD) of diode is converted into heat, these heats conduct to far-end along micro belt conductor on the one hand, see through medium below the micro belt conductor on the other hand to being delivered to ground level (overall situation).Obviously, little more little more away from the PIN tube core with the heat of going up conduction, little with on temperature gradient more little.When the length of microstrip line reached certain distance as calculated, the temperature of microstrip line and pipe were irrelevant, can reach the purpose of the diode radiating that is independent of each other.Short for the microstrip line length between diode, can make diode in series obtain balanced voltage, the microstrip line length between diode is calculated according to designing requirement and is chosen.Preferably, microstrip line length is less than 1/4 wavelength, and this wavelength is the wavelength that electromagnetic wave transmits in this microstrip line.
Preferably, diode is the plastic packaging PIN diode.In this preferred embodiment, adopt the plastic packaging PIN diode, guarantee that Insertion Loss is lower, thereby realize lower impedance.
When every index of low noise amplifier switch protection circuit satisfies instructions for use, for power amplification path and LNA path provide reliable operational environment.Simultaneously, can avoid the complexity of existing integrated switch module welding procedure, also reduce the cost of switch, isolate for the TDD power amplifier provides high-power, high, stability is high, can be according to the different LNA protection switch circuit that adjust framework of index request.
Based on circuit structure shown in Figure 2, below the type selecting of how to carry out the PIN diode is further specified:
In this preferred embodiment, select that intrinsic thickness is big, the knot face connects big PIN diode for use, this kind PIN diode is when conducting, and differential loss is lower.
At the LNA branch road, in order to improve the switching circuit isolation, Bing Lian PIN diode VD13 over the ground, what select for use is that intrinsic thickness is big, the knot face connects big PIN diode.Though the capacitance of equivalence was bigger when it was anti-inclined to one side,, select the PIN diode of this specific character more suitable from the angle of forward conduction raising circuit isolation.
Behind the contrast test that has carried out the PIN diode parallel connection of different manufacturers, the crucial S parameter of series connection; indexs such as comprehensive isolation, Insertion Loss, circuit devcie quantity, the suitable PIN diode of selection makes up the low noise amplifier protection switch in the embodiment of the invention on two work branch of switching circuit.
Embodiment 2
Fig. 3 is the another kind of circuit diagram according to the low noise amplifier protection switch of the embodiment of the invention; wherein; the common port A of switch is connected to antenna ANT0_CIR; the transmitting terminal T of switch connects load D4; the receiving terminal R of switch is connected to low noise amplifier LNA0_1; common port A connects transmitting terminal T by two diode pairs; promptly comprise the diode pair (or being called one group of diode) of diode VD7 and VD8 and comprise the diode pair (or being called one group of diode) of diode VD5 and VD6; common port A connects receiving terminal R by two diode pairs; the diode pair and the diode pair that comprises diode connected in parallel VD11 and VD12 that promptly comprise diode connected in parallel VD9 and VD10; wherein; the diode pair that comprises diode connected in parallel VD7 and VD8 is connected with the diode pair that comprises diode connected in parallel VD5 and VD6, comprises the diode pair and the diode pair series connection that comprises diode connected in parallel VD11 and VD12 of diode connected in parallel VD9 and VD10.Preferably, the diode VD7 that is connected with common port A is connected with common port A with the anode of VD8 and diode VD5 and VD6, negative electrode is connected with transmitting terminal T, the diode VD9 that is connected with common port A is connected with common port A with the anode of VD10 and diode VD11 and VD12, and negative electrode is connected with receiving terminal R.
Certainly, present embodiment only is an example, the present invention is not limited to said structure, wherein the quantity of the diode pair between common port A and the transmitting terminal T can be greater than two, the quantity of the diode pair between common port A and the receiving terminal R also can be greater than two, the polarity of diode pair can be set at negative electrode according to the difference of circuit and be arranged on transmitting terminal T or receiving terminal R direction, anode is arranged on common port A direction, perhaps negative electrode is arranged on common port A direction, and anode is arranged on transmitting terminal T or receiving terminal R direction.Certainly, the quantity of diode connected in parallel also can be provided with different quantity as required in each diode pair.
As shown in Figure 3, in this switching circuit, the voltage of 3.3V is normal confession.When the transmitting branch of switch was worked, when POW_RSW_H0_B moved ground to, POW_RSW_L0_B was lifted to the high level of 28V, and one group of parallel diode VD7 on the branch road, VD8 anode obtain the positive bias-voltage of 3.3V at this moment, and dividing potential drop 0.7V; Another group parallel diode VD5, VD6 anode obtain the positive bias-voltage of 2.6V, and the left branch road conducting of switching circuit from the radiofrequency signal of antenna opening LNA0_CIR reflected back, is transferred to load end D4 by left branch road.Because this moment, POW_RSW_L0_B was lifted to the high level of 28V, so two groups of parallel diodes of right branch road all instead end partially.Meanwhile, LNA0_1 end diode connected in parallel VD13 conducting, the radiofrequency signal that reflexes to right wing from antenna opening to ground, has reached the purpose that improves isolation, protection LNA by VD13.
When the receiving branch of switch was worked, when POW_RSW_H0_B moved ground to, POW_RSW_H0_B was lifted to the 28V current potential.This moment, two groups of parallel diode VD9, VD10 and VD11, the VD12 anode on the right branch road all obtained the positive bias-voltage of 3.3V, and this moment, LNA LNA0_1 termination was logical.The VD13 anode obtains the reversed bias voltage of 28V and instead ends partially, and the purpose that open this 28V reversed bias voltage this moment is that the Insertion Loss that has guaranteed its introducing drops to minimum.Simultaneously, parallel diode VD7, the VD8 of TX branch road all instead end partially.
Certainly; present embodiment only to how to reduce differential loss and improve isolation is illustrated; complete LNA protection switch circuit also should comprise also comprised by-pass capacitor, every radio frequency inductive device, electrical power by-pass capacitor, biasing resistor, be not described in detail in the present invention.Certainly, in the present invention, in order to guarantee the speed of switch, and reduce the power consumption of drive circuit, need to add drive circuit.In drive circuit, utilize the PNP bipolar transistor to replace pull-up resistor, can effectively improve the speed of switch.
From above description; as can be seen; the present invention has realized following technique effect: adopt new circuit layout mode; after abundant analysis to the thermal conduction characteristic of characteristic, the microstrip line of encapsulation PIN diode, DC feedback network; take into account circuit size, heat dispersion, high-power, high isolation, the low every index of Insertion Loss; design and use common pcb board material, adopt SMT (Surface Mounted Technology, surface mounting technology) processing technology, the higher low noise amplifier protection switch circuit of reliability.And, can adjust the structure of circuit according to the index request of different product for switching circuit.Simultaneously, compare existing integrated switch module, utilize PIN diode technology maturity height, with low cost, the simple advantage of welding procedure, and use common pcb board material and SMT processing technology, be suitable for producing in batches, realize that finally performance combines preferably with cost.Simultaneously, can be according to the difference of power capacity, the difference for isolation, Insertion Loss index request suitably increases and decreases diode, realizes base station product diversification demand; Convenience, the flexibility used have been guaranteed.Simultaneously, also can adapt to the requirement of different frequency range by changing inductance, electric capacity model in parallel.
Obviously, those skilled in the art should be understood that, above-mentioned each module of the present invention or each step can realize with the general calculation device, they can concentrate on the single calculation element, perhaps be distributed on the network that a plurality of calculation element forms, alternatively, they can be realized with the executable program code of calculation element, thereby, they can be stored in the storage device and carry out by calculation element, and in some cases, can carry out step shown or that describe with the order that is different from herein, perhaps they are made into each integrated circuit modules respectively, perhaps a plurality of modules in them or step are made into the single integrated circuit module and realize.Like this, the present invention is not restricted to any specific hardware and software combination.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. low noise amplifier protection switch; the common port of described switch is connected to antenna; the transmitting terminal of described switch is connected to load; the receiving terminal of described switch is connected to low noise amplifier; it is characterized in that described common port is connected to described transmitting terminal by at least one first group of diode, described common port is connected to described receiving terminal by at least one second group of diode; wherein, described first group of diode and described second group of diode include diode connected in parallel.
2. switch according to claim 1 is characterized in that, also comprises: the 3rd diode, and an end of described the 3rd diode is connected between described second group of diode and the described receiving terminal, and the other end of described the 3rd diode is connected to ground.
3. switch according to claim 1 is characterized in that, the number of diodes difference at least two described first group of diodes.
4. switch according to claim 1 is characterized in that, the number of diodes difference at least two described second group of diodes.
5. switch according to claim 1 is characterized in that, each described first group of diode and described second group of diode comprise at least two diodes.
6. switch according to claim 1 is characterized in that, described first group of diode is different with described second group of number of diodes.
7. switch according to claim 1 is characterized in that, links to each other by microstrip line between the described diode.
8. switch according to claim 7 is characterized in that, described microstrip line length is less than 1/4 wavelength.
9. according to each described switch of claim 1-8, it is characterized in that described diode is the plastic packaging PIN diode.
10. according to each described switch of claim 1-8, it is characterized in that, the anode of the diode in the described first group of diode that is connected with described common port is connected with described common port, the negative electrode of the diode in the described first group of diode that is connected with described transmitting terminal is connected with described transmitting terminal, the anode of the diode in the described second group of diode that is connected with described common port is connected with described common port, and the negative electrode of the diode in the described second group of diode that is connected with described receiving terminal is connected with described receiving terminal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101023990A CN102291090A (en) | 2011-04-22 | 2011-04-22 | Low-noise amplifier protection switch |
| PCT/CN2012/072480 WO2012142893A1 (en) | 2011-04-22 | 2012-03-16 | Low noise amplifier protection switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101023990A CN102291090A (en) | 2011-04-22 | 2011-04-22 | Low-noise amplifier protection switch |
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| Publication Number | Publication Date |
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| CN102291090A true CN102291090A (en) | 2011-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101023990A Pending CN102291090A (en) | 2011-04-22 | 2011-04-22 | Low-noise amplifier protection switch |
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|---|---|
| CN (1) | CN102291090A (en) |
| WO (1) | WO2012142893A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012142893A1 (en) * | 2011-04-22 | 2012-10-26 | 中兴通讯股份有限公司 | Low noise amplifier protection switch |
| CN106470026A (en) * | 2015-08-18 | 2017-03-01 | 中兴通讯股份有限公司 | A kind of radio-frequency switch circuit and radio frequency link |
| CN107483077A (en) * | 2017-09-26 | 2017-12-15 | 天津光电通信技术有限公司 | A kind of high power high-isolation signal transmitting and receiving converter |
| CN110311635A (en) * | 2019-06-28 | 2019-10-08 | 京信通信系统（中国）有限公司 | Ultra-wideband amplifier and multi-carrier transmission, R-T unit based on the amplifier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003044922A2 (en) * | 2001-10-11 | 2003-05-30 | Politechnika Gdanska | Short-circuit current limiter for short-circuit protection in alternating current circuits |
| CN201057642Y (en) * | 2007-05-31 | 2008-05-07 | 武汉虹信通信技术有限责任公司 | Circuit for implementing TD_SCDMA high-power high-isolation RF switch |
| CN101282127A (en) * | 2007-04-06 | 2008-10-08 | 中兴通讯股份有限公司 | Transmit-receive switching mechanism for TDD radio communication system |
| CN201414127Y (en) * | 2009-05-19 | 2010-02-24 | 京信通信系统（中国）有限公司 | Tower top amplifier and bypass switch switching circuit thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2031178U (en) * | 1988-04-14 | 1989-01-18 | 徐宇菀 | Vhf. uhf all channel antenna amplifier |
| CN2456421Y (en) * | 2000-08-15 | 2001-10-24 | 深圳市中兴通讯股份有限公司 | Front terminal receiving/transmitting device |
| CN102291090A (en) * | 2011-04-22 | 2011-12-21 | 中兴通讯股份有限公司 | Low-noise amplifier protection switch |
-
2011
- 2011-04-22 CN CN2011101023990A patent/CN102291090A/en active Pending
-
2012
- 2012-03-16 WO PCT/CN2012/072480 patent/WO2012142893A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003044922A2 (en) * | 2001-10-11 | 2003-05-30 | Politechnika Gdanska | Short-circuit current limiter for short-circuit protection in alternating current circuits |
| CN101282127A (en) * | 2007-04-06 | 2008-10-08 | 中兴通讯股份有限公司 | Transmit-receive switching mechanism for TDD radio communication system |
| CN201057642Y (en) * | 2007-05-31 | 2008-05-07 | 武汉虹信通信技术有限责任公司 | Circuit for implementing TD_SCDMA high-power high-isolation RF switch |
| CN201414127Y (en) * | 2009-05-19 | 2010-02-24 | 京信通信系统（中国）有限公司 | Tower top amplifier and bypass switch switching circuit thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012142893A1 (en) * | 2011-04-22 | 2012-10-26 | 中兴通讯股份有限公司 | Low noise amplifier protection switch |
| CN106470026A (en) * | 2015-08-18 | 2017-03-01 | 中兴通讯股份有限公司 | A kind of radio-frequency switch circuit and radio frequency link |
| CN107483077A (en) * | 2017-09-26 | 2017-12-15 | 天津光电通信技术有限公司 | A kind of high power high-isolation signal transmitting and receiving converter |
| CN110311635A (en) * | 2019-06-28 | 2019-10-08 | 京信通信系统（中国）有限公司 | Ultra-wideband amplifier and multi-carrier transmission, R-T unit based on the amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012142893A1 (en) | 2012-10-26 |
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Application publication date: 20111221 |