CN102290488A - Preparation method of thick polysilicon film - Google Patents
Preparation method of thick polysilicon film Download PDFInfo
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- CN102290488A CN102290488A CN2011102052045A CN201110205204A CN102290488A CN 102290488 A CN102290488 A CN 102290488A CN 2011102052045 A CN2011102052045 A CN 2011102052045A CN 201110205204 A CN201110205204 A CN 201110205204A CN 102290488 A CN102290488 A CN 102290488A
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Abstract
The invention discloses a preparation method of a thick polysilicon film, comprising the following steps: after common metallurgical silicon is scoured and decontaminated, carrying out heavy doping of boron or aluminum to form p-type conductive silicon; obtaining the p-type conductive silicon by the ingot casting slicing technology; then, depositing thin films of silicon oxide (SiO2), silicon nitride (SiNx), alumina (Al2O3) or aluminium nitride (AlNx) and the like on a substrate to serve as a medium barrier layer; carrying out graphical tapping to the medium barrier layer, wherein the hole penetrates through the medium barrier layer to be communicated with the p-type conductive silicon substrate; finally, depositing the thick polysilicon film on the surface of the medium barrier layer at high temperature by chemical vapor deposition; and causing the deposited thick polysilicon film to electrically contact with the p-type conductive silicon substrate on a tapping position. Compared with the prior art, the method is characterized in that the thick polysilicon film with low cost, large area and high quality can be obtained, and the method can be directly used for the traditional manufacture production line of the polysilicon solar cell, and has important application value.
Description
Technical field
The present invention relates to the crystal silicon solar energy battery technical field, be specifically related to a kind of method for preparing low-cost polysilicon thick film on low-cost conductive silicon substrate, the polysilicon thick-film material that utilizes this method to obtain can be directly used in existing crystal silicon solar energy battery manufacturing line.
Background technology
Solar power generation is a kind of generation mode of renewable resource, and power generation process can not produce carbon dioxide isothermal chamber gas, can not pollute environment.Solar cell is the environment-friendly battery that utilizes solar power generation, and practical at present solar cell can be divided into crystal silicon solar energy battery and thin-film solar cells according to manufacturing materials.
Crystal silicon solar energy battery is higher because of its photoelectric conversion efficiency, technology maturation and raw material abundance, has occupied the share in photovoltaic market 80%.Yet the shortcoming of present stage crystal silicon solar energy battery manufacturing also is conspicuous, and the silicon materials consumption that battery uses is excessive, so comprehensive energy consumption is higher, and the cost cutting of crystal silicon cell is subjected to very big restriction.Usually, crystal silicon solar energy battery is to make on the about 200 microns silicon chip of thickness, form and cut on the silicon chip polycrystal silicon ingot that generally to be the monocrystal rod that generated by Czochralski method or directional long crystal solidification technology make, make through multistep technologies such as cut-out, grinding, chamfering, cutting, corrosion then, especially spillage of material is very big in slicing processes, has reduced the utilization rate of high purity polycrystalline silicon material.
Under this background, reducing silicon material use amount is the low-cost important research direction of using of silica-based solar cell, and the filming of solar cell is to be purpose to reduce the solar cell cost of manufacture and to save expensive semi-conducting material.Wherein, amorphous silicon thin-film solar cell is with low cost, and is easy to prepare, caused people's extensive concern.But because the unsteadiness of amorphous silicon thin-film solar cell, its photoelectric conversion efficiency can decay along with the continuity of light application time, the efficient of amorphous silicon thin-film solar cell is also lower in addition, generally have only 5% to 7%, these shortcomings have greatly restricted the development of amorphous silicon thin-film solar cell.Multi-crystal silicon film solar battery is owing to the polysilicon substrate of employed silicon raw material far fewer than slice process, its theoretical cost will be far below body polysilicon sheet solar cell, in addition, polysilicon membrane has the advantage of crystalline silicon electric property and high stability concurrently, therefore, multi-crystal silicon film solar battery is considered to the solar cell of future generation of most possible substituted single crystal silicon solar cell and amorphous silicon thin-film solar cell, has become the research focus in international photovoltaic field now.
At present, the method for preparing polysilicon membrane mainly contains two kinds: a kind of is directly at substrate previous step deposited polycrystalline silicon thin film, the main at present chemical vapour deposition technique that adopts, comprise low-pressure chemical vapor deposition (LPCVD) and plasma reinforced chemical vapour deposition (PECVD) technology, in addition, liquid phase epitaxial method (LPPE) and sputtering method also can be used to prepare polysilicon membrane; Another kind is a first deposition of amorphous silicon films on substrate, then by crystallization technique or heat treatment technics convert amorphous silicon membrane to polysilicon membrane again.Yet the polysilicon membrane of low-cost preparation large tracts of land, big crystal grain, high carrier mobility still is the huge difficult problem of pendulum in face of the various countries researcher.If can on cheap substrate, grow large tracts of land, high-quality polysilicon thick film apace, and this polysilicon thick film can be directly used in existing crystal silicon solar energy battery manufacturing line, to be a kind of very valuable implementation that improves the solar cell photoelectric conversion efficiency and reduce production costs, will certainly promote the extensive use of solar power generation.
Summary of the invention
Technical purpose of the present invention is the present situation at existing crystal silicon solar energy battery, a kind of preparation method of polysilicon thick film is provided, utilize this method can access low cost, large tracts of land, high-quality polysilicon thick film, and this polysilicon thick film can be directly used in existing crystal silicon solar energy battery manufacturing line.
The present invention realizes that the technical scheme that above-mentioned technical purpose adopts comprises the steps:
1. metallurgical grade silicon is carried out simple pickling impurity removal, the doped with boron of laying equal stress on or aluminium obtain heavy doping p type metalluragical silicon cheaply, obtain p type conductive polycrystalline silicon substrate by ingot casting, slice process again;
2. on the p type conductive polycrystalline silicon substrate that step 1 obtains, deposit layer of silicon dioxide (SiO
2), silicon nitride (SiN
x), aluminium oxide (Al
2O
3) or aluminium nitride (AlN
x) wait film as dielectric barrier, be used to isolate p type conductive polycrystalline silicon substrate impurity, and this dielectric barrier has back-passivated good result concurrently;
3. the dielectric barrier that step 2 is obtained carries out graphical perforate, promptly adopt technology such as laser or photoetching to carry out perforate in the given position of dielectric barrier, these holes form certain pattern arrangement, and these holes penetrate dielectric barrier, are connected with p type conductive polycrystalline silicon substrate;
4. with the dielectric barrier surface preparation polysilicon thick film of chemical vapour deposition technique after the graphical perforate of step 3, at the tapping of dielectric impedance laminar surface, polysilicon thick film that is deposited and p type conductive polycrystalline silicon substrate form and electrically contact.
As preferably:
The purity of the p type conductive polycrystalline silicon substrate that step 1 obtains is preferably 99.9%～99.99%; The thickness of p type conductive polycrystalline silicon substrate is preferably 200 μ m～300 μ m, and resistivity is preferably 0.0005 Ω cm～0.1 Ω cm.
In the step 2, preferably on p type conductive polycrystalline silicon substrate, at first clean, surface preparation matte, deposition of silica (SiO then
2), silicon nitride (SiN
x), aluminium oxide (Al
2O
3) or aluminium nitride (AlN
x) wait film as dielectric barrier.
In the step 3, can adopt technology such as laser or photoetching to carry out graphical perforate at dielectric barrier, the pitch of holes between the adjacent holes is preferably 200 μ m～2mm.
In the step 4, the polysilicon thickness of thick film is preferably 5 μ m～100 μ m, and the employed gas of deposit spathic silicon thick film is preferably SiH
4Perhaps SiHCl
3, depositing temperature is 800 ℃～1200 ℃.
Among the above-mentioned preparation method:
In sum, the preparation method of polysilicon thick film provided by the invention is simple to operate, with low cost, can access large tracts of land, high-quality polysilicon thick film, and this polysilicon thick film and p type conductive polycrystalline silicon substrate form naturally and electrically contact, can be directly used in existing crystal silicon solar energy battery manufacturing line, realize the manufacturing of large solar battery, have important use and be worth.
Description of drawings
Fig. 1 is the three-dimensional cutaway view of the polysilicon thick film that obtained by preparation method of the present invention;
Fig. 2 is a kind of perforate dot pattern of preparation method's medium barrier layer surface of the present invention;
Fig. 3 is the solar battery structure schematic diagram that utilizes polysilicon thick film that preparation method of the present invention obtains to make.
Embodiment
Below the present invention is described in further detail, it is pointed out that the following stated embodiment is intended to be convenient to the understanding of the present invention, and it is not played any qualification effect.
Reference numeral among Fig. 1 and Fig. 3 is: p type conductive polycrystalline silicon substrate 1, dielectric barrier 2, polysilicon thick film 3, aperture area 4, silicon nitride (SiN
x) antireflection layer 5, preceding contact grid line 6.
As shown in Figure 1, the preparation method of polysilicon thick film of the present invention comprises the steps:
1, utilize conventional preparation technology to obtain p type conductive polycrystalline silicon substrate 1;
2, on p type conductive polycrystalline silicon substrate 1, deposit layer of silicon dioxide (SiO with the chemical gaseous phase deposition method
2), silicon nitride (SiN
x), aluminium oxide (Al
2O
3) or aluminium nitride (AlN
x) wait film as dielectric barrier 2;
3, adopt technology such as laser or photoetching that dielectric barrier 2 is carried out graphical perforate, obtain aperture area 4, make aperture area 4 penetrate dielectric barrier 2, be connected with p type conductive polycrystalline silicon substrate 1;
4, use chemical vapour deposition technique at dielectric barrier 2 surface preparation polysilicon thick films 3, aperture area 4 places on dielectric barrier 2 surfaces, the polysilicon thick film 3 that is deposited forms with p type conductive polycrystalline silicon substrate 1 and electrically contacts;
The above-mentioned polysilicon thick film 3 for preparing can be directly used in existing crystal silicon solar energy battery manufacturing line, realizes the manufacturing of extensive polysilicon thick film solar cell, as shown in Figure 3, specifically comprises the steps:
5, the polysilicon thick film 3 that adopts above-mentioned steps 4 to obtain, to polysilicon thick film 3 clean, the surface preparation matte, spread then and obtain PN junction;
6, adopt hydrofluoric acid solution to remove surperficial phosphorosilicate glass, adopt plasma etching technology to remove the PN junction at edge;
7, adopt the PECVD technology to prepare silicon nitride (SiN in the n of polysilicon thick film 3 type emitter surface
x) antireflection layer 5;
8, make preceding contact grid line 6, promptly obtain polysilicon thick film solar cell.
As preferably, in above-mentioned polysilicon thick film preparation method's the step 2, on p type conductive polycrystalline silicon substrate 1, at first clean, surface preparation matte, deposition of silica (SiO then
2), silicon nitride (SiN
x), aluminium oxide (Al
2O
3) or aluminium nitride (AlN
x) wait film as dielectric barrier 2, then dielectric barrier 2 is carried out graphical perforate, use chemical vapour deposition technique at dielectric barrier 2 surface preparation polysilicon thick films 3 at last, aperture area 4 places on dielectric barrier 2 surfaces, the polysilicon thick film 3 that is deposited forms with p type conductive polycrystalline silicon substrate 1 and electrically contacts.
The above-mentioned polysilicon thick film 3 for preparing can be directly used in existing crystal silicon solar energy battery manufacturing line, realizes the manufacturing of extensive polysilicon thick film solar cell, as shown in Figure 3, specifically comprises the steps:
5, employing above-mentioned steps 4 obtains polysilicon thick film 3, polysilicon thick film 3 is spread obtain PN junction;
6, adopt hydrofluoric acid solution to remove surperficial phosphorosilicate glass, adopt plasma etching technology to remove the PN junction at edge;
7, adopt the PECVD technology to prepare silicon nitride (SiN in the n of polysilicon thick film 3 type emitter surface
x) antireflection layer 5;
8, make preceding contact grid line 6, promptly obtain polysilicon thick film solar cell;
Perhaps, specifically comprise the steps:
5, in step 4, at first deposit p type polysilicon, deposit n type polysilicon again, thereby obtain PN junction;
6, then adopt plasma etching technology to remove the PN junction at edge;
7, adopt the PECVD technology to prepare silicon nitride (SiN in the n of this polysilicon thick film 3 type emitter surface
x) antireflection layer 5;
8, make preceding contact grid line 6 at last, promptly obtain polysilicon thick film solar cell.
Embodiment 1:
Present embodiment provides a kind of preparation method of polysilicon thick film, and this polysilicon thick film is directly used in existing crystal silicon solar energy battery manufacturing line, obtains polysilicon thick film solar cell.
1, at first, common metalluragical silicon is carried out simple pickling impurity removal, heavy doping boron or aluminium then obtain low-cost purity and are 99.9%～99.99% heavy doping p type metalluragical silicon material; By ingot casting, slice process p type metalluragical silicon material being made thickness then is 200 μ m, is of a size of the heavy doping p type conductive polycrystalline silicon substrate of 156mm * 156mm, and its resistivity is 0.05 Ω cm;
2, counterweight doped p type conductive polycrystalline silicon substrate cleans, and adopting trimethyl aluminium (TMA) then is raw material, NH
3Be nitridizing agent, by PECVD means deposit aluminum nitride (AlN
x) film is as dielectric barrier, depositing temperature is 300 ℃, the thickness of aluminium nitride film is 50nm;
3, be 10W with power, wavelength is the green laser of 532nm, by laser beam drilling dot chart shown in Figure 2, carry out a surface sweeping at the heavy doping p type conductive polycrystalline silicon substrate surface that is coated with the aluminium nitride dielectric barrier, make the dielectric barrier partially perforation at exposure place, this hole penetrates dielectric barrier, is connected with p type conductive polycrystalline silicon substrate, and the laser beam drilling lattice distance is 1.5mm;
4, adopt the high-purity Si HCl that sneaks into a small amount of borine
3Perhaps SiH
4Be raw material, at the dielectric impedance laminar surface is the p type polysilicon thick film of 50 μ m by high temperature CVD process deposits thickness, depositing temperature is 900 ℃, and at the tapping of dielectric impedance laminar surface, p type polysilicon thick film that is deposited and p type conductive polycrystalline silicon substrate form and electrically contact;
5, with conventional method to p type polysilicon thick film clean, the surface preparation matte, use phosphorus oxychloride that p type polysilicon thick film is spread then and obtain PN junction;
6, adopt hydrofluoric acid solution to remove surperficial phosphorosilicate glass, adopt plasma etching technology to remove the PN junction at edge;
7, adopt the PECVD technology to prepare silicon nitride (SiN in the n type emitter surface of this p type polysilicon thick film
x) antireflection layer;
8, make preceding contact grid line, promptly obtain polysilicon thick film solar cell.
Embodiment 2:
Present embodiment provides a kind of preparation method of polysilicon thick film, and this polysilicon thick film is directly used in existing crystal silicon solar energy battery manufacturing line, obtains polysilicon thick film solar cell.
1, at first, common metalluragical silicon is carried out simple pickling impurity removal, heavy doping boron or aluminium then obtain low-cost purity and are 99.9%～99.99% heavy doping p type metalluragical silicon material; By ingot casting, slice process p type metalluragical silicon material being made thickness then is 200 μ m, is of a size of the heavy doping p type conductive polycrystalline silicon substrate of 156mm * 156mm, and its resistivity is 0.1 Ω cm;
2, counterweight doped p type conductive polycrystalline silicon substrate clean, the surface preparation matte, adopt high-purity Si HCl then
3Perhaps SiH
4Be raw material, O
2Be oxidant, by PECVD means deposition of silica (SiO
2) film is as dielectric barrier, depositing temperature is 300 ℃, the thickness of silica membrane is 100nm;
3, be 10W with power, wavelength is the red laser of 1064nm, by laser beam drilling dot chart shown in Figure 2, carry out a surface sweeping at the heavy doping p type conductive polycrystalline silicon substrate surface that is coated with the silica dioxide medium barrier layer, make the dielectric barrier partially perforation at exposure place, this hole penetrates dielectric barrier, is connected with p type conductive polycrystalline silicon substrate, and the laser beam drilling lattice distance is 500 μ m;
4, adopt the high-purity Si HCl that sneaks into a small amount of borine
3Perhaps SiH
4Be raw material, at the dielectric impedance laminar surface is the p type polysilicon thick film of 10 μ m by high temperature CVD process deposits thickness, depositing temperature is 900 ℃, and at the tapping of dielectric impedance laminar surface, p type polysilicon thick film that is deposited and p type conductive polycrystalline silicon substrate form and electrically contact;
5, use phosphorus oxychloride that p type polysilicon thick film is spread and obtain PN junction;
6, adopt hydrofluoric acid solution to remove surperficial phosphorosilicate glass, adopt plasma etching technology to remove the PN junction at edge;
7, adopt the PECVD technology to prepare silicon nitride (SiN in the n type emitter surface of this p type polysilicon thick film
x) antireflection layer;
8, make preceding contact grid line, promptly obtain polysilicon thick film solar cell.
Embodiment 3:
Present embodiment provides a kind of preparation method of polysilicon thick film, and this polysilicon thick film is directly used in existing crystal silicon solar energy battery manufacturing line, obtains polysilicon thick film solar cell.
1, at first, common metalluragical silicon is carried out simple pickling impurity removal, heavy doping boron or aluminium then obtain low-cost purity and are 99.9%～99.99% heavy doping p type metalluragical silicon material; By ingot casting, slice process p type metalluragical silicon material being made thickness then is 200 μ m, is of a size of the heavy doping p type conductive polycrystalline silicon substrate of 156mm * 156mm, and its resistivity is 0.1 Ω cm;
2, counterweight doped p type conductive polycrystalline silicon substrate clean, the surface preparation matte, adopt high-purity Si HCl then
3Perhaps SiH
4Be raw material, NH
3Be nitridizing agent, by PECVD means deposited silicon nitride (SiN
x) film is as dielectric barrier, depositing temperature is 300 ℃, the thickness of silicon nitride film is 200nm;
3, be 10W with power, wavelength is the red laser of 1064nm, by laser beam drilling dot chart shown in Figure 2, carry out a surface sweeping at the heavy doping p type conductive polycrystalline silicon substrate surface that is coated with the silicon nitride medium barrier layer, make the dielectric barrier partially perforation at exposure place, this hole penetrates dielectric barrier, is connected with p type conductive polycrystalline silicon substrate, and the laser beam drilling lattice distance is 1mm;
4, adopt the high-purity Si HCl that sneaks into a small amount of borine
3Perhaps SiH
4Be raw material, at the dielectric impedance laminar surface is the p type polysilicon thick film of 10 μ m by high temperature CVD process deposits thickness, depositing temperature is 900 ℃, and at the tapping of dielectric impedance laminar surface, p type polysilicon thick film that is deposited and p type conductive polycrystalline silicon substrate form and electrically contact; Adopt the high-purity Si HCl that sneaks into a small amount of phosphine then
3Perhaps SiH
4Being raw material, is the n type polysilicon thick film of 500nm in p type polysilicon thick film surface by high temperature CVD process deposits thickness, and depositing temperature is 900 ℃, thereby forms PN junction;
5, adopt plasma etching technology to remove the PN junction at edge;
6, adopt the PECVD technology at n type polysilicon surface deposited silicon nitride (SiN
x) antireflection layer;
7, make preceding contact grid line, promptly obtain polysilicon thick film solar cell.
Above-described embodiment has been described in detail technical scheme of the present invention and beneficial effect; be understood that the above only is specific embodiments of the invention; be not limited to the present invention; the all any modifications made in principle scope of the present invention and improvement etc. all should be included within protection scope of the present invention.
Claims (6)
1. the preparation method of a polysilicon thick film, it is characterized in that: at first, metalluragical silicon is carried out simple pickling impurity removal, the doped with boron of laying equal stress on or aluminium obtain low-cost heavy doping p type metalluragical silicon, obtain p type conductive polycrystalline silicon substrate by ingot casting, slice process again; Then, films such as deposition of silica, silicon nitride, aluminium oxide or aluminium nitride are as dielectric barrier on described p type conductive polycrystalline silicon substrate, described dielectric barrier is carried out graphical perforate, and this hole penetrates dielectric barrier and is connected with p type conductive polycrystalline silicon substrate; At last, at described dielectric barrier surface deposition polysilicon thick film, described polysilicon thick film electrically contacts at tapping and the formation of p type conductive polycrystalline silicon substrate with chemical vapour deposition technique.
2. the preparation method of a kind of polysilicon thick film according to claim 1, it is characterized in that: at first clean on the described p type conductive polycrystalline silicon substrate, the surface preparation matte, deposition of silica, silicon nitride, aluminium oxide or aluminium nitride film are as dielectric barrier then.
3. the preparation method of a kind of polysilicon thick film according to claim 1 and 2 is characterized in that: the resistivity of described p type conductive polycrystalline silicon substrate is 0.0005 Ω cm～0.1 Ω cm.
4. the preparation method of a kind of polysilicon thick film according to claim 1 and 2 is characterized in that: the purity of described p type conductive polycrystalline silicon substrate is 99.9%～99.99%.
5. the preparation method of a kind of polysilicon thick film according to claim 1 and 2 is characterized in that: described dielectric barrier is carried out graphical perforate, and the pitch of holes between the adjacent holes is 200 μ m～2mm.
6. the preparation method of a kind of polysilicon thick film according to claim 1 and 2 is characterized in that: the gas that described polysilicon thick film deposition is adopted is SiH
4Perhaps SiHCl
3, depositing temperature is 800 ℃～1200 ℃, thickness is 5 μ m～100 μ m.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522446A (en) * | 2011-12-30 | 2012-06-27 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| CN103515456A (en) * | 2012-06-26 | 2014-01-15 | Lg电子株式会社 | Solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933185A (en) * | 2006-10-13 | 2007-03-21 | 中国科学院上海技术物理研究所 | Cheap polysilicon thin film solar cell |
| CN101667602A (en) * | 2009-09-23 | 2010-03-10 | 中轻太阳能电池有限责任公司 | Polysilicon solar cell and preparation method thereof |
| CN102064239A (en) * | 2010-12-03 | 2011-05-18 | 湖南大学 | Method for producing polycrystalline silicon thick-film solar battery |
| CN102299205A (en) * | 2011-08-29 | 2011-12-28 | 中国科学院宁波材料技术与工程研究所 | Method for texturing surface of crystal silicon solar cell |
-
2011
- 2011-07-21 CN CN2011102052045A patent/CN102290488A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933185A (en) * | 2006-10-13 | 2007-03-21 | 中国科学院上海技术物理研究所 | Cheap polysilicon thin film solar cell |
| CN101667602A (en) * | 2009-09-23 | 2010-03-10 | 中轻太阳能电池有限责任公司 | Polysilicon solar cell and preparation method thereof |
| CN102064239A (en) * | 2010-12-03 | 2011-05-18 | 湖南大学 | Method for producing polycrystalline silicon thick-film solar battery |
| CN102299205A (en) * | 2011-08-29 | 2011-12-28 | 中国科学院宁波材料技术与工程研究所 | Method for texturing surface of crystal silicon solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522446A (en) * | 2011-12-30 | 2012-06-27 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| CN102522446B (en) * | 2011-12-30 | 2014-02-26 | 常州天合光能有限公司 | HIT solar cell structure and manufacturing method thereof |
| CN103515456A (en) * | 2012-06-26 | 2014-01-15 | Lg电子株式会社 | Solar cell |
| CN103515456B (en) * | 2012-06-26 | 2017-03-01 | Lg电子株式会社 | Solaode |
| US10573767B2 (en) | 2012-06-26 | 2020-02-25 | Lg Electronics Inc. | Solar cell |
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Application publication date: 20111221 |