CN102290482A - High efficiency large-scale manufacturing method of crystalline silicon battery - Google Patents
High efficiency large-scale manufacturing method of crystalline silicon battery Download PDFInfo
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- CN102290482A CN102290482A CN2010102041864A CN201010204186A CN102290482A CN 102290482 A CN102290482 A CN 102290482A CN 2010102041864 A CN2010102041864 A CN 2010102041864A CN 201010204186 A CN201010204186 A CN 201010204186A CN 102290482 A CN102290482 A CN 102290482A
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- stove
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- temperature sintering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a high efficiency large-scale manufacturing method of a crystalline silicon battery, which comprises a step of carrying out high temperature sintering treatment on a silicon wafer coated with a pulp layer; the battery manufactured by adopting the manufacturing method has high efficiency; and the manufacturing method is simple in process and easy to operate.
Description
Technical field:
The present invention relates to a kind of production method of crystal silicon cell.
Background technology:
In the technical process of producing solar cell, can cause various contaminations inevitably, the air-channel system of diffusion furnace can be introduced the contamination of various dust, and Quartz stove tube can cause that sodium ion stains, and the multiple high temp cycle heat treatment easily makes the inner thermal stress that produces of silicon chip.Make solar cell and adopt solar energy level silicon, the defective of material own is many, and compensation uprises, and in the manufacturing process, easily introduces the artificial contamination and the contamination of various chemical reagent.Above-mentioned defective causes battery efficiency to reduce.
Summary of the invention:
The object of the present invention is to provide the high method for making in scale high-efficiency crystal silicon cell of a kind of battery efficiency.
Technical solution of the present invention is:
A kind of method for making in scale high-efficiency crystal silicon cell comprises that the silicon chip to coating slurry layer carries out the high temperature sintering processing, and it is characterized in that: high temperature sintering is to carry out under the nitrogen oxygen atmosphere, and the weight ratio of nitrogen and oxygen is 8～15: 1 in the nitrogen oxygen atmosphere.
The temperature that high temperature sintering is handled is 950～1200 ℃ for the zone melting single-crystal silion cell, for the czochralski silicon monocrystal battery be 800～1000 ℃, the high temperature sintering processing time is 0.5～6 hour.
When high temperature sintering is handled, when silicon chip advances stove, take to advance fast stove, take when silicon chip is come out of the stove to come out of the stove at a slow speed.
Advancing stove fast is to finish into stove process in 2 seconds～2 minutes with batch silicon chip that needs high temperature sintering to handle; Come out of the stove at a slow speed is to finish the process of coming out of the stove in 10 minutes～20 minutes with batch silicon chip that needs high temperature sintering to handle.
The high temperature sintering processing environment atmosphere that the present invention adopts, the aluminium atom is diffused rapidly in the atom of back of the body surface silicon of battery, in silicon, form a large amount of misfit dislocations, defective in various metal impurities in the cell body and the body is adsorbed onto the back of the body surface of battery, and the temperature of selection can reach this effect better; Take the method advancing stove fast and come out of the stove at a slow speed, advancing stove fast and be in order to hate good ground manufacturing defect, to go out slowly is in whole pyroprocess, absorbs in " defective " defective in the various metal impurities and body, is fixed in " defective " of artificial manufacturing.The product usefulness height that the present invention makes, and be difficult for to produce bad phenomenon such as balling-up, wrinkling, blackout, fried sheet.
The invention will be further described below in conjunction with embodiment.
Embodiment 1:
A kind of efficient zone melting single-crystal silion cell method for making in scale; comprise that the silicon chip to coating slurry layer carries out the high temperature sintering processing; high temperature sintering is to carry out under the nitrogen oxygen atmosphere, and the weight ratio of nitrogen and oxygen is 8～15: 1 (can be 8: 1 or 10: 1,15: 1) in the nitrogen oxygen atmosphere.The temperature that high temperature sintering is handled is 950～1200 ℃ (950 ℃, 1100 ℃, 1200 ℃ of examples), and the high temperature sintering processing time is 0.5～6 hour (example 6 hours, 3 hours, 0.5 hour).When high temperature sintering is handled, when silicon chip advances stove, take and to advance the stove method fast with what batch silicon chip that needs high temperature sintering to handle was finished stove process in (example 2 seconds, 30 seconds, 1 minute, 2 minutes) at 2 seconds～2 minutes, take when silicon chip is come out of the stove to finish the method for coming out of the stove at a slow speed of the process of coming out of the stove in (example 10 minutes, 15 minutes, 20 minutes) at 10 minutes～20 minutes with batch silicon chip that needs high temperature sintering to handle.All the other steps are with conventional crystal silicon cell manufacturing step, product promptly.
Embodiment 2:
A kind of efficient czochralski silicon monocrystal battery method for making in scale, the temperature that high temperature sintering is handled is 800～1000 ℃ (800 ℃, 900 ℃, 1000 ℃ of examples), all the other are with embodiment 1.
Claims (4)
1. a method for making in scale high-efficiency crystal silicon cell comprises that the silicon chip to coating slurry layer carries out the high temperature sintering processing, and it is characterized in that: high temperature sintering is to carry out under the nitrogen oxygen atmosphere, and the weight ratio of nitrogen and oxygen is 8～15: 1 in the nitrogen oxygen atmosphere.
2. method for making in scale high-efficiency crystal silicon cell according to claim 1; it is characterized in that: the temperature that high temperature sintering is handled is 950～1200 ℃ for the zone melting single-crystal silion cell; for the czochralski silicon monocrystal battery be 800～1000 ℃, the high temperature sintering processing time is 0.5～6 hour.
3. method for making in scale high-efficiency crystal silicon cell according to claim 1 and 2 is characterized in that: when high temperature sintering is handled, when silicon chip advances stove, take to advance fast stove, take when silicon chip is come out of the stove to come out of the stove at a slow speed.
4. method for making in scale high-efficiency crystal silicon cell according to claim 4 is characterized in that: advancing stove fast is to finish into stove process in 2 seconds～2 minutes with batch silicon chip that needs high temperature sintering to handle; Come out of the stove at a slow speed is to finish the process of coming out of the stove in 10 minutes～20 minutes with batch silicon chip that needs high temperature sintering to handle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102041864A CN102290482A (en) | 2010-06-17 | 2010-06-17 | High efficiency large-scale manufacturing method of crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102041864A CN102290482A (en) | 2010-06-17 | 2010-06-17 | High efficiency large-scale manufacturing method of crystalline silicon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102290482A true CN102290482A (en) | 2011-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2010102041864A Pending CN102290482A (en) | 2010-06-17 | 2010-06-17 | High efficiency large-scale manufacturing method of crystalline silicon battery |
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| CN (1) | CN102290482A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709181A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for improving conversion efficiencies of silicon crystal battery chips |
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2010
- 2010-06-17 CN CN2010102041864A patent/CN102290482A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709181A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for improving conversion efficiencies of silicon crystal battery chips |
| CN102709181B (en) * | 2012-05-08 | 2014-12-31 | 常州天合光能有限公司 | Method for improving conversion efficiencies of silicon crystal battery chips |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111221 |