CN102280315A - RF (radio frequency) micromechanical switch with horizontally-push-and-pull comb tooth unit - Google Patents
RF (radio frequency) micromechanical switch with horizontally-push-and-pull comb tooth unit Download PDFInfo
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- CN102280315A CN102280315A CN2011101399087A CN201110139908A CN102280315A CN 102280315 A CN102280315 A CN 102280315A CN 2011101399087 A CN2011101399087 A CN 2011101399087A CN 201110139908 A CN201110139908 A CN 201110139908A CN 102280315 A CN102280315 A CN 102280315A
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Abstract
The invention discloses an RF (radio frequency) micromechanical switch with a horizontally-push-and-pull comb tooth unit, and the switch provided by the invention comprises a substrate, a coplanar waveguide transmission line and a drive part, wherein the coplanar waveguide transmission line comprises a signal wire, a left ground wire and a right ground wire; the signal wire comprises an upper port, a lower port and two groups of slender beams; each group of slender beams comprise a first slender beam and a second slender beam; the upper end of the first slender beam is fixedly connected with the edge of the bottom surface of the upper port and the lower end of the second slender beam is fixedly connected with the edge of the top surface of the lower port; the drive part comprises an anchorage area and four groups of comb tooth structures; each group of comb tooth structures comprise a fixed comb tooth unit and a movable comb tooth unit; and the fixed comb tooth units are fixedly connected with the side wall of the anchorage area, and the movable comb tooth units are fixedly connected with the slender beams and move to adhere or separate the lower part of the first slender beam to or from the upper part of the second slender beam. The RF micromechanical switch with the structure can be used for improving the isolation and reducing the executive voltage.
Description
Technical field
The present invention relates to a kind of rf micromechanical switch, specifically, relate to a kind of laterally rf micromechanical switch of the comb unit of push-and-pull that has.
Background technology
Existing radio-frequency (RF) switch comprises touch switch and capacitance-type switch.The general structure of touch switch is: adopt the contact or the disconnection of static or other type of drive control signal wire, reach the effect of control switch break-make, its isolation is decided by the parasitic capacitance of breaking part.For the switch that an end disconnects, along with the rising of frequency, parasitic capacitance increases rapidly, causes the isolation of switch to reduce rapidly thereupon, and the distance that increases its breaking part can effectively improve isolation.The general structure of capacitance-type switch is: adopt the motion of static driven mode controlling diaphragm bridge, reach the effect that changes the size that is connected across the electric capacity between holding wire and the ground wire, come the break-make of control signal.Compare with general touch switch, capacitance-type switch can show higher isolation when upper frequency, and its isolation is decided by the dead resistance of film bridge.But because skin effect, along with the rising of frequency, the dead resistance in the capacitance-type switch increases rapidly, causes the isolation of switch to reduce rapidly thereupon.
Summary of the invention
Technical problem: technical problem to be solved by this invention is: a kind of laterally rf micromechanical switch of the comb unit of push-and-pull that has is provided, to improve the isolation of the rf micromechanical switch when the OFF state, reduces the execution voltage of rf micromechanical switch.
Technical scheme:For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of laterally rf micromechanical switch of the comb unit of push-and-pull that has, it is characterized in that, comprise substrate, coplanar waveguide transmission line and driver part, described coplanar waveguide transmission line comprises holding wire and is positioned at the left ground wire and the right ground wire of the holding wire left and right sides that holding wire leaves the gap respectively and between left ground wire and the right ground wire; Holding wire comprises upper port and the lower port that is vertical layout, and two groups of slender beams that are in vacant state; Left side ground wire, right ground wire, upper port and lower port are fixedly connected on the substrate respectively; Every group of slender beam is made up of first slender beam and second slender beam, the upper end of first slender beam is fixedly connected on the edge of upper port bottom surface, the lower end of second slender beam is fixedly connected on the edge of lower port end face, and first slender beam and second slender beam are oppositely arranged; Described driver part comprises the anchor district that is fixedly connected on the substrate and between two groups of slender beams and is in four groups of comb structures of vacant state; Every group of comb structure comprises fixed fingers unit that is provided with fixed fingers and the mobile comb unit that is provided with mobile broach, the fixed fingers unit is fixedly connected on the sidewall in anchor district, mobile comb unit is fixedly connected on the slender beam, from first slender beam to the anchor district, mobile comb unit and fixed fingers unit repeat to distribute according to mobile broach, fixed fingers in proper order, to the anchor district, mobile comb unit and fixed fingers unit repeat to distribute according to fixed fingers, mobile broach in proper order from second slender beam; Fit or separate in the bottom that the moving of mobile comb unit can make first slender beam and the top of second slender beam.
Beneficial effect: compared with prior art, technical scheme of the present invention has following beneficial effect:
1. rf micromechanical switch has isolation height, the low advantage of execution voltage when OFF state.When rf micromechanical switch is in OFF state, adopt plug-type movable holding wire, i.e. gap between first slender beam and second slender beam, be twice than gap with unidirectional motion, parasitic capacitance value when having reduced OFF state, the isolation of rf micromechanical switch when consequently the rf micromechanical switch structure of the technical program has improved OFF state.When OFF state, the size of the parasitic capacitance of rf micromechanical switch has determined the size of its isolation.Parasitic capacitance is big more, and isolation is more little.And the size of parasitic capacitance is and first slender beam and second slender beam between spacing be inversely proportional to.Under OFF state, between first slender beam and second slender beam spacing, adopt the mode of push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, be twice.Like this, under OFF state, adopt the mode of push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, it is little one times that parasitic capacitance is also wanted.Switch isolation degree when therefore, the rf micromechanical switch of the technical program effectively raises OFF state.Simultaneously, utilize the driver part of comb structure as rf micromechanical switch, the high-aspect-ratio of comb structure, it is lower to carry out voltage.
2. area of chip is little.In the technical program, driver part promptly is positioned at the holding wire inside of rf micromechanical switch between two groups of slender beams.Relative and driver part is arranged on the holding wire outside, and the chip area in the technical program is less, has saved the making raw material.
3. reduce the insertion loss of radio frequency, microwave signal.In the technical program, when rf micromechanical switch is in ON state,, reduced the loss of substrate, thereby reduced the insertion loss of radio frequency, microwave signal because that first slender beam and second slender beam are in is unsettled.
Description of drawings
Fig. 1 is a vertical view of the present invention.
Fig. 2 is the A-A cutaway view among Fig. 1.
Have among the figure: substrate 1, holding wire 2, upper port 21, lower port 22, first slender beam 23, second slender beam 24, left ground wire 3, right ground wire 4, anchor district 5, comb structure 6, fixed fingers unit 61, mobile comb unit 62, upper cut 7, lower cut 8.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is carried out specific description.
As depicted in figs. 1 and 2, a kind of laterally rf micromechanical switch of the comb unit of push-and-pull that has comprises substrate 1, coplanar waveguide transmission line and driver part.Coplanar waveguide transmission line is used to transmit radio frequency, microwave signal.Coplanar waveguide transmission line comprises holding wire 2, left ground wire 3 and right ground wire 4.Left side ground wire 3 and right ground wire 4 are positioned at holding wire 2 left and right sides, and holding wire 2 leaves the gap respectively and between left ground wire 3 and the right ground wire 4.Holding wire 2 comprises upper port 21 and the lower port 22 that is vertical layout, and two groups of slender beams.Left side ground wire 3, right ground wire 4, upper port 21 and lower port 22 are fixedly connected on respectively on the substrate 1.Upper port 21 is positioned at the top of lower port 22, and between upper port 21 and the lower port 22 space is arranged.Upper port 21 and lower port 22 are used for the signal output and the input of holding wire 2.If upper port 21 is signal input parts, lower port 22 is exactly a signal output part so.If upper port 21 is signal output parts, lower port 22 is exactly a signal input part so.Two groups of slender beams all are in vacant state, and promptly slender beam does not contact with substrate 1.Every group of slender beam is made up of one first slender beam 23 and one second slender beam 24.First slender beam 23 and second slender beam 24 have certain elasticity, can swing.In every group of slender beam, the upper end of first slender beam 23 is fixedly connected on the edge of upper port 21 bottom surfaces, and the lower end of second slender beam 24 is fixedly connected on the edge of lower port 22 end faces.First slender beam 23 and second slender beam 24 are oppositely arranged.Under rf micromechanical switch is in OFF state, gapped between first slender beam 23 and second slender beam 24.
Driver part comprises anchor district 5 and is in four groups of comb structures 6 of vacant state.Anchor district 5 is between two groups of slender beams, and on the anchor district 5 fixedly connected substrates 1.The shape in anchor district 5 can be various, preferred rectangle.Rectangular anchor district 5 is all symmetrical up and down, is convenient to arrange comb structure 6.Every group of comb structure 6 comprises a fixed fingers unit 61 and a mobile comb unit 62.Be provided with fixed fingers in the fixed fingers unit 61, be provided with mobile broach in the mobile comb unit 62.Fixed fingers unit 61 is fixedly connected on the sidewall in anchor district 5, and mobile comb unit 62 is fixedly connected on the slender beam.Because two groups of slender beams have four slender beams,, make each slender beam all be connected with a mobile comb unit 62 so comb structure 6 is set to four groups.Mobile comb unit 62 and fixed fingers unit 61 have the broach of equal number, help arranging of mobile comb unit 62 and fixed fingers unit 61.To anchor district 5, mobile comb unit 62 and fixed fingers unit 61 repeat to distribute according to mobile broach, fixed fingers in proper order from first slender beam 23.Like this, being connected mobile comb unit 62 on first slender beam 23 can drive first slender beam 23 and move to the direction near anchor district 5.To anchor district 5, mobile comb unit 62 and fixed fingers unit 61 repeat to distribute according to fixed fingers, mobile broach in proper order from second slender beam 24.Like this, being connected mobile comb unit 62 on second slender beam 24 can drive second slender beam 24 and move to the direction that deviates from anchor district 5.Fit or separate in the bottom that the moving of mobile comb unit 62 can make first slender beam 23 and the top of second slender beam 24.
Said structure have laterally that the manufacturing process of the rf micromechanical switch of the comb unit of push-and-pull is: the anchor district 5 that at first etches the silicon chip back side, and the silicon chip back side and substrate 1 carried out anode linkage, etch the shape of co-planar waveguide then in the silicon chip front of bonding pad, follow splash-proofing sputtering metal layer and etching, obtain holding wire 2, left ground wire 3, right ground wire 4, first slender beam 23 and second slender beam 24 of coplanar waveguide structure, the method with dark silicon etching carves comb structure 6 at last.
The operation principle of the rf micromechanical switch of said structure is: by fixed fingers unit 61 in the change comb structure 6 and the gap length between the mobile comb unit 62, can control the direction of motion of mobile comb unit 62.Because first slender beam 23, second slender beam 24 are fixedlyed connected with mobile comb unit 62 respectively,, finally obtain the effect of bi-directional push-pull so first slender beam 23 and second slender beam 24 can move with the motion of mobile comb unit 62.The concrete course of work is: radio frequency, microwave signal are connected to the upper port 21 and the lower port 22 of co-planar waveguide, and holding wire 2 is defaulted as the direct current zero potential, and therefore the current potential with dc offset voltage is loaded in the anchor district 5.When being biased voltage in the anchor district 5, the high potential in the anchor district 5 and two first slender beams 23 produce electrostatic force by comb structure 6, and it is the inside pulling force at center in the horizontal with anchor district 5 that this electrostatic force has produced; High potential in the anchor district 6 and two second slender beams 24 produce electrostatic force by comb structure 6 simultaneously, and it is the outside thrust at center in the horizontal with anchor district 5 that this electrostatic force has produced.These two groups of electrostatic force one push away one and draw, and make the lower end of first slender beam 23 in two groups of slender beams and the last end in contact of second slender beam 24, and radio frequency, microwave signal are transmitted.During bias voltage on removing anchor district 5, first slender beam 23 in two groups of slender beams and second slender beam 24 separately, have been blocked the transmission of radio frequency, microwave signal under the effect of restoring force.
The rf micromechanical switch of said structure has isolation height, the low advantage of execution voltage when OFF state.When rf micromechanical switch is in OFF state, adopt plug-type movable holding wire, i.e. gap between first slender beam 23 and second slender beam 24, be twice than gap with unidirectional motion, parasitic capacitance value when having reduced OFF state, the isolation of rf micromechanical switch when consequently the rf micromechanical switch structure of the technical program has improved OFF state.When OFF state, the size of the parasitic capacitance of rf micromechanical switch has determined the size of its isolation.Parasitic capacitance is big more, and isolation is more little.And the size of parasitic capacitance is and first slender beam 23 and second slender beam 24 between spacing be inversely proportional to.Under OFF state, between first slender beam 23 and second slender beam 24 spacing, adopt the mode of push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, be twice.Like this, under OFF state, adopt the mode of push-and-pull to move, push away or only adopt the mode of drawing to move than only adopting, it is little one times that parasitic capacitance is also wanted.Switch isolation degree when therefore, the rf micromechanical switch of the technical program effectively raises OFF state.Simultaneously, utilize the driver part of comb structure 6 as rf micromechanical switch, the high-aspect-ratio of comb structure 6, it is lower to carry out voltage.In addition, driver part promptly is positioned at holding wire 2 inside of rf micromechanical switch between two groups of slender beams, reduced area of chip.When rf micromechanical switch is in ON state, because that first slender beam 23 and second slender beam 24 are in is unsettled, has reduced the loss of substrate 1, thereby reduced the insertion loss of radio frequency, microwave signal.
Further, described first slender beam 23 tops are provided with upper cut 7 near a side in anchor district 5, and described second slender beam 24 bottoms are provided with lower cut 8 near a side in anchor district 5.The effect that upper cut 7 and lower cut 8 are set is the rotational stiffness that reduces slender beam, reduces to carry out voltage.
Claims (3)
1. one kind has the laterally rf micromechanical switch of the comb unit of push-and-pull, it is characterized in that, comprises substrate (1), coplanar waveguide transmission line and driver part;
Described coplanar waveguide transmission line comprises holding wire (2) and is positioned at the left ground wire (3) and the right ground wire (4) of holding wire (2) left and right sides that holding wire (2) leaves the gap respectively and between left ground wire (3) and the right ground wire (4); Holding wire (2) comprises upper port (21) and the lower port (22) that is vertical layout, and two groups of slender beams that are in vacant state; Left side ground wire (3), right ground wire (4), upper port (21) and lower port (22) are fixedly connected on respectively on the substrate (1); Every group of slender beam is made up of first slender beam (23) and second slender beam (24), the upper end of first slender beam (23) is fixedly connected on the edge of upper port (21) bottom surface, the lower end of second slender beam (24) is fixedly connected on the edge of lower port (22) end face, and first slender beam (23) and second slender beam (24) are oppositely arranged;
Described driver part comprises and is fixedly connected on that substrate (1) is gone up and the anchor district (5) between two groups of slender beams and be in four groups of comb structures (6) of vacant state; Every group of comb structure (6) comprises fixed fingers unit (61) that is provided with fixed fingers and the mobile comb unit (62) that is provided with mobile broach, fixed fingers unit (61) is fixedly connected on the sidewall of anchor district (5), and mobile comb unit (62) is fixedly connected on the slender beam; From first slender beam (23) to anchor district (5), repeat to distribute according to mobile broach, fixed fingers in proper order in mobile comb unit (62) and fixed fingers unit (61), to anchor district (5), repeat to distribute according to fixed fingers, mobile broach in proper order in mobile comb unit (62) and fixed fingers unit (61) from second slender beam (24); Fit or separate in the bottom that the moving of mobile comb unit (62) can make first slender beam (23) and the top of second slender beam (24).
2. according to the described laterally rf micromechanical switch of the comb unit of push-and-pull that has of claim 1, it is characterized in that, described first slender beam (23) top is provided with upper cut (7) near a side in anchor district (5), and described second slender beam (24) bottom is provided with lower cut (8) near a side in anchor district (5).
3. according to the described laterally rf micromechanical switch of the comb unit of push-and-pull that has of claim 1, it is characterized in that described fixed fingers unit (61) and mobile comb unit (62) have the broach of equal number.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110139908.7A CN102280315B (en) | 2011-05-27 | 2011-05-27 | RF (radio frequency) micromechanical switch with horizontally-push-and-pull comb tooth unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110139908.7A CN102280315B (en) | 2011-05-27 | 2011-05-27 | RF (radio frequency) micromechanical switch with horizontally-push-and-pull comb tooth unit |
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| Publication Number | Publication Date |
|---|---|
| CN102280315A true CN102280315A (en) | 2011-12-14 |
| CN102280315B CN102280315B (en) | 2014-02-26 |
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| CN201110139908.7A Expired - Fee Related CN102280315B (en) | 2011-05-27 | 2011-05-27 | RF (radio frequency) micromechanical switch with horizontally-push-and-pull comb tooth unit |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501547A (en) * | 2002-11-14 | 2004-06-02 | 东南大学 | Radio-frequency micro-mechanical switch |
| US20070090902A1 (en) * | 2005-10-20 | 2007-04-26 | International Business Machines Corporation | Apparatus for accurate and efficient quality and reliability evaluation of micro electromechanical systems |
| US20090114513A1 (en) * | 2007-11-01 | 2009-05-07 | Samsung Electro-Mechanics Co, Ltd. | Micro electromechanical system (mems) switch |
| US20100181173A1 (en) * | 2009-01-19 | 2010-07-22 | Rodriguez Lorenzo G | Electrostatically actuated non-latching and latching rf-mems switch |
| KR101030549B1 (en) * | 2008-12-30 | 2011-04-21 | 서울대학교산학협력단 | Rf switch using mems |
| CN202102984U (en) * | 2011-05-27 | 2012-01-04 | 东南大学 | Radio frequency micro-mechanical switch with comb teeth unit capable of being pushed and pulled transversely |
-
2011
- 2011-05-27 CN CN201110139908.7A patent/CN102280315B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501547A (en) * | 2002-11-14 | 2004-06-02 | 东南大学 | Radio-frequency micro-mechanical switch |
| US20070090902A1 (en) * | 2005-10-20 | 2007-04-26 | International Business Machines Corporation | Apparatus for accurate and efficient quality and reliability evaluation of micro electromechanical systems |
| US20090114513A1 (en) * | 2007-11-01 | 2009-05-07 | Samsung Electro-Mechanics Co, Ltd. | Micro electromechanical system (mems) switch |
| KR101030549B1 (en) * | 2008-12-30 | 2011-04-21 | 서울대학교산학협력단 | Rf switch using mems |
| US20100181173A1 (en) * | 2009-01-19 | 2010-07-22 | Rodriguez Lorenzo G | Electrostatically actuated non-latching and latching rf-mems switch |
| CN202102984U (en) * | 2011-05-27 | 2012-01-04 | 东南大学 | Radio frequency micro-mechanical switch with comb teeth unit capable of being pushed and pulled transversely |
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| Publication number | Publication date |
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| CN102280315B (en) | 2014-02-26 |
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Granted publication date: 20140226 Termination date: 20170527 |