CN102270694B - Preparation method for flexible substrate silicon-based thin film solar cell integrated inline component - Google Patents
Preparation method for flexible substrate silicon-based thin film solar cell integrated inline component Download PDFInfo
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Abstract
The invention provides a preparation method for a flexible substrate silicon-based thin film solar cell integrated inline component, relates to a solar cell integrated inline technology and belongs to the field of thin film solar cells in new energies. As the substrate has poor light transmittance and the cell is of an NIP structure, in the method provided by the invention, an inline mode is designed for the solar cell, the laser etching process is applied to the procedure of the silicon-based thin film solar cell preparation, a screen printing technology is combined and finally the silicon-based thin film solar cell integrated inline component is obtained. The method can is favorable for increasing the production, reducing the cost, accelerating the industrialization process of such batteries, improving the open-circuit voltage of large area cells, reducing the splicing complexity of the component and improving the reliability of the component.
Description
Technical field
The present invention relates to the field of thin-film solar cells in the new forms of energy, be specifically related to integrated inline assembly of a kind of flexible substrate silicon based thin film solar cell and preparation method thereof.
Background technology
Solar energy has a high potential, and adopting optical energy power is alleviating energy crisis and an important channel of improving the ecological environment.Solar cell is as a kind of device that directly light energy conversion is become electric energy, in suitability for industrialized production, because the output of the electric energy of single battery is very little, can not satisfy the demand of use, must carry out effective connection in series-parallel at battery structure, to reach desired voltage, electric current and power.Integrated inline be a kind of mode that generally adopts on the glass substrate thin film solar cell, be associated in integrated in the process of solar cell deposition and realize, do not need follow-up work for the treatment of, this simplification will make to produce and improve and reduce cost, also be to reduce assembly splicing complexity, improve the effective way of assembly reliability.
Solar cell of a great variety, in a plurality of kinds, using more is silica-based solar cell.And thin film solar cell is the most rapidly solar cell of Developing, the silica-base film flexible battery has the feasibility that realizes that the large tracts of land assembly is produced, and the cost of silicon-based thin film solar cell is low, is convenient to large-scale production, is subject to people's generally attention and is developed rapidly.Compare and other solar cell, the flexible polyimide substrate silicon based thin film solar battery, have lightweight, high gravimetric specific power, flexible, be not afraid of the advantage such as collision, no matter at various special occasions such as satellite, spacecraft, space stations, or on civilian very wide application prospect is arranged.
At present, the integrated inline technology of glass substrate silicon-based thin film solar cell, comparative maturity, and be widely used in the industrial production.Because the flexible polyimide light transmission is bad, reaching battery is the characteristics of NIP structure, and the integrated inline more problems that need to solve of flexible polyimide substrate silicon based thin film solar battery are still in the research stage of fumbling.
The object of the invention is to provide a kind of method for designing and preparation process for preparing the integrated inline assembly of thin film solar cell.
Summary of the invention
For the problems referred to above, the purpose of this invention is to provide the preparation method of the integrated inline assembly of a kind of flexible substrate silicon based thin film solar cell, prior art solar cell thin layer resistance is large, light transmission is bad to solve, and the complicated technical problem of assembly splicing.
For achieving the above object, the present invention has adopted following technical scheme:
The preparation method of the integrated inline assembly of a kind of flexible substrate silicon based thin film solar cell comprises:
Step 1: polyimide substrate is put into ethanolic solution, through the repeated ultrasonic vibration, clean up, and dry up stand-by;
Step 2: adopt magnetron sputtering apparatus, on the polyimide substrate after the cleaning, preparation silver and zinc oxide conductive film layer are as back electrode;
Step 3: in sputter on the sample of back electrode, Nd:YVO
4The laser ablation back electrode film is divided into a plurality of small sizes zone with back electrode.
Step 4: at laser ablation on the sample of back electrode, preparation NIP type silica-base film absorbed layer;
Step 5: adopt the method for magnetron sputtering, on the sample of silica-based absorbed layer of having grown, electrode before the preparation tin indium oxide;
Step 6: on the sample of front electrode of having grown, frequency multiplication Nd:YVO
4Electrode and absorbed layer before the laser ablation;
Step 7: at above-mentioned laser ablation on the sample of front electrode and absorbed layer, by printing technology, printed silver grid line on front electrode rete, and be filled in the cutting of front electrode and absorbed layer with the silver slurry;
Step 8: on the sample that has printed silver grating line, frequency multiplication Nd:YVO
4Electrode before the laser ablation;
Step 9: laser ablation insulated wire;
Step 10: draw positive pole and the negative pole of battery from integrated inline assembly, then encapsulate.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, in step 2, the chamber temp of preparation back electrode is 200 ℃, and conductive film layer thickness is at 600-1000nm;
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, described laser ablation adopts Nd:YVO
4With frequency multiplication Nd:YVO
4Two kinds of laser.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, in step 4, the NIP type silicon-base thin-film battery that makes is that unijunction or binode build up structure.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, described NIP type silicon-base thin-film battery structure is that phosphorus doping N-type silica-base film/I type silica-base film/boron doping P type silica-base film is arranged in order.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, the front electrode film layer thickness that makes in step 5 is at 70-90nm, and the chamber temp of its preparation is 100 ℃.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, the silver slurry that adopts in the step 7 is for selecting low-temperature solidified silver paste.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, step 7 also comprises at a lower temperature fired sample, solidifies the silver slurry.
Preparation method according to the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention etches away in step 8 and partially absorbs layer material.
According to the preparation method of the integrated inline assembly of the described flexible substrate silicon based thin film solar cell of preferred embodiment of the present invention, step 9 comprises two kinds of implementations:
Mode one: adopt frequency multiplication Nd:YVO
4Electrode and partially absorb layer before the laser ablation;
Mode two: adopt frequency multiplication Nd:YVO
4Electrode before the laser ablation, and lose at this hour on the position, Nd:YVO adopted
4Absorbed layer and back electrode material are all etched away.
Since adopted above technical characterictic, so that the present invention has following advantage and good effect than prior art:
At first, adopt the manufacture method of the integrated inline assembly of polyimide substrate silicon-based thin film solar cell of the present invention's proposition, can improve the open circuit voltage of battery, simplify the complexity of battery component splicing, the reliability of assembly also can improve a lot.
Secondly, be convenient to realize large-scale production, accelerate the process of the type solar cell industrialization.Satisfying stratospheric airship, aviation etc. to high power--quality is than the active demand of photovoltaic cell.
Description of drawings
Fig. 1 is method flow diagram of the present invention;
Fig. 2 is the structural representation of the integrated inline assembly of polyimide substrate thin film solar cell that makes of the present invention.
Embodiment
Below in conjunction with accompanying drawing several preferred embodiments of the present invention are described in detail, but the present invention is not restricted to these embodiment.The present invention is contained any in substituting of making of marrow of the present invention and scope, modification, equivalent method and scheme.Understand for the public is had thoroughly the present invention, in the following preferred embodiment of the present invention, describe concrete details in detail, and do not have for a person skilled in the art the description of these details also can understand the present invention fully.
Please refer to Fig. 1, the preparation method's of the integrated inline assembly of a kind of flexible substrate silicon based thin film solar cell of the present invention flow chart.
Method of the present invention comprises:
S101: polyimide substrate is put into ethanolic solution, through the repeated ultrasonic vibration, clean up, and dry up stand-by;
S102: adopt magnetron sputtering apparatus, on the polyimide substrate after the cleaning, preparation silver and zinc oxide conductive film layer are as back electrode;
Adopt magnetron sputtering apparatus, in preparation silver and the process of zinc oxide conductive film layer as back electrode, chamber temp is 200 ℃, and the conductive film layer thickness that makes is at 600-1000nm.
S103: in sputter on the sample of back electrode, the laser ablation back electrode film is divided into a plurality of small sizes zone with back electrode.
Adopt Nd:YVO
4Laser carries out the laser ablation back electrode film, and back electrode is divided into a plurality of small sizes zone.In order to ensure the evenness of machined surface, processing platform adopts vacuum suction system.
And regulate laser processing parameter (power, repetition rate, process velocity, focal position etc.), guarantee that the back electrode film etching of etch areas is clean, and the obvious spike of nothing around the etched line.
S104: at laser ablation on the sample of back electrode, preparation NIP type silica-base film absorbed layer;
Adopt PECVD equipment, utilize the technique of silicon-based thin film solar cell to prepare NIP type silica-base film absorbed layer, NIP type silica-base film absorbed layer is that unijunction or binode build up structure.
S105: adopt the method for magnetron sputtering, on the sample of silica-based absorbed layer of having grown, electrode before the preparation tin indium oxide;
Adopt the method for magnetron sputtering, electrode before the preparation tin indium oxide, chamber temp is 100 ℃, front electrode film layer thickness is at 70-90nm.
S106: on the sample of front electrode of having grown, electrode and absorbed layer before the laser ablation;
Adopt frequency multiplication Nd:YVO
4Electrode and absorbed layer before the laser, laser ablation (certainly, also can adopt or the laser ablation hole in this step, front electrode and absorbed layer are run through in the hole).
Processing platform adopts vacuum suction system, guarantees the evenness of machined surface, seeks suitable laser processing parameter;
S107: at above-mentioned laser ablation on the sample of front electrode and absorbed layer, by printing technology, printed silver grid line on front electrode rete, and fill the described laser grooving of S106 (or laser ablation hole) with the silver slurry;
Select low-temperature solidified silver paste, at a lower temperature the sample that has printed silver grating line is toasted, solidify the silver slurry;
S108: on the sample that has printed silver grating line, electrode before the laser ablation;
Adopt frequency multiplication Nd:YVO
4Laser, on the sample of above-mentioned printed silver grid line, electrode before the laser ablation can etch away and partially absorb layer material.Finish the structure processing of integrated inline battery component.
S109: laser ablation insulated wire;
Laser ablation insulated wire, insulated wire comprise two kinds:
A: adopt frequency multiplication Nd:YVO
4Electrode and partially absorb layer before the laser ablation;
B: adopt frequency multiplication Nd:YVO
4Electrode before the laser ablation, and lose at this hour on the position, Nd:YVO adopted
4Absorbed layer and back electrode material are all etched away.
S110: draw positive pole and the negative pole of battery from integrated inline assembly, then encapsulate.
Please refer to Fig. 2, according to method of the present invention, the integrated inline assembly of the flexible substrate silicon based thin film solar cell that produces, its structure as shown in Figure 2, comprise polyimide substrate 1, the back electrode 2 that the anti-silver of the back of the body and nesa coating zinc oxide are made includes the absorbed layer 3 of N-type silica-base film, I type silica-base film, P type silica-base film and the front electrode 4 of nesa coating tin indium oxide, and the grid line 5 of silver slurry printing.The cutting 6 of the back electrode 2 rear generations of laser ablation is divided into back electrode 2 in the zone of a plurality of small sizes; The cutting 7 of etching absorbed layer 3 and front electrode 4 is filled with the silver slurry; After having printed grid line, the cutting 8 before the etching behind the electrode 4.
Embodiment one
Polyimide substrate is put into ethanolic solution, and supersonic oscillations 15 minutes are vibrated three times.With nitrogen cleaned polyimide substrate is dried up, put into magnetron sputtering apparatus, baking is one hour under 400 ℃ of high vacuum states; At 400 ℃ of high vacuum sputtering silver back reflection layers, and at 200 ℃ of high vacuum sputtering zinc oxide layers, the back electrode film gross thickness is about 900nm.Adopt the laser ablation silver/zinc oxide anti-layer of the back of the body (cutting 6) of 1064nm, the etching live width is about 30 μ m.
Respectively at three the indoor deposition N of differential responses, I, the P three-layer thin-film of PECVD equipment.After the amorphous silicon membrane deposition is complete, battery sample is naturally cooled to room temperature, from PECVD equipment, take out.Put into magnetron sputtering apparatus, under 100 ℃ of high vacuum states, electrode before the preparation indium tin oxide transparent, thicknesses of layers is about 80nm.
Adopt laser ablation absorbed layer and the front electrode layer (cutting 7) of tin indium oxide of 532nm, the etching live width is about 70 μ m, and cutting 6 and cutting 7 spacings are about 60 μ m.Adopt low-temperature solidified silver paste, with screen printing apparatus printed silver grid line, and guarantee that conductive silver paste fills 7,120 ℃ of bakings of cutting battery sample half an hour, solidify the silver slurry.
With the laser ablation indium tin oxide layer (cutting 8) of 532nm, the etching live width is about 60 μ m; Cutting 7,8 spacings are about 140 μ m; Cutting 6, cutting 7, cutting 8 are parallel to each other, and (or moving to left) certain distance that moves to right successively,, the overall width of etching three lines is about 360 μ m.
The etching insulated wire with 532nm laser electrode and the silica-based absorbed layer of part before etching oxidation indium tin around the battery, is drawn the positive and negative electrode of battery, and packaged battery, finishes the preparation of integrated inline assembly.
In sum, the present invention has following advantage and good effect than prior art:
At first, adopt the manufacture method of the integrated inline assembly of polyimide substrate silicon-based thin film solar cell of the present invention's proposition, can improve the open circuit voltage of battery, simplify the complexity of battery component splicing, the reliability of assembly also can improve a lot.
Secondly, be convenient to realize large-scale production, accelerate the process of the type solar cell industrialization.Satisfying stratospheric airship, aviation etc. to high power--quality is than the active demand of photovoltaic cell.
The preferred embodiment of the present invention just is used for helping to set forth the present invention.Preferred embodiment does not have all details of detailed descriptionthe, does not limit this invention yet and only is described embodiment.Obviously, according to the content of this specification, can make many modifications and variations.These embodiment are chosen and specifically described to this specification, is in order to explain better principle of the present invention and practical application, thereby the technical field technical staff can utilize the present invention well under making.The present invention only is subjected to the restriction of claims and four corner and equivalent.
Claims (9)
1. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell is characterized in that, comprising:
Step 1: polyimide substrate is put into ethanolic solution, through the repeated ultrasonic vibration, clean up, and dry up stand-by;
Step 2: adopt magnetron sputtering apparatus, on the polyimide substrate after the cleaning, preparation silver and zinc oxide conductive film layer are as back electrode;
Step 3: in sputter on the sample of back electrode, Nd:YVO
4The laser ablation back electrode film is divided into a plurality of small sizes zone with back electrode;
Step 4: at laser ablation on the sample of back electrode, preparation NIP type silica-base film absorbed layer;
Step 5: adopt the method for magnetron sputtering, on the sample of silica-based absorbed layer of having grown, electrode before the preparation tin indium oxide;
Step 6: on the sample of front electrode of having grown, frequency multiplication Nd:YVO
4Electrode and absorbed layer before the laser ablation;
Step 7: at above-mentioned laser ablation on the sample of front electrode and absorbed layer, by printing technology, printed silver grid line on front electrode rete, and be filled in the cutting of front electrode and absorbed layer with the silver slurry;
Step 8: on the sample that has printed silver grating line, frequency multiplication Nd:YVO
4Electrode before the laser ablation;
Step 9: laser ablation insulated wire;
Step 10: draw positive pole and the negative pole of battery from integrated inline assembly, then encapsulate.
2. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, in step 2, the chamber temp of preparation back electrode is 200 ℃, and described silver and zinc oxide conductive film layer thickness are at 600-1000nm.
3. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, in step 4, the NIP type silica-base film absorbed layer that makes is that unijunction or binode build up structure.
4. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1, it is characterized in that, described NIP type silica-base film absorbed layer is that phosphorus doping N-type silica-base film/I type silica-base film/boron doping P type silica-base film is arranged in order.
5. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, the front electrode film layer thickness that makes in step 5 is at 70-90nm, and the chamber temp of its preparation is 100 ℃.
6. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, the silver slurry that adopts in the step 7 is for selecting low-temperature solidified silver paste.
7. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, step 7 also comprises at a lower temperature fired sample, solidifies the silver slurry.
8. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, etches away in step 8 and partially absorbs layer material.
9. the preparation method of the integrated inline assembly of flexible substrate silicon based thin film solar cell as claimed in claim 1 is characterized in that, step 9 comprises two kinds of implementations:
Mode one: adopt frequency multiplication Nd:YVO
4Electrode and partially absorb layer before the laser ablation;
Mode two: adopt frequency multiplication Nd:YVO
4Electrode before the laser ablation, and lose at this hour on the position, Nd:YVO adopted
4Absorbed layer and back electrode material are all etched away.
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| CN103280846B (en) * | 2013-03-27 | 2016-08-03 | 上海空间电源研究所 | A kind of flexible photovoltaic integration power-supply system |
| CN103618030B (en) * | 2013-11-28 | 2016-03-09 | 上海空间电源研究所 | The method of flexible PI substrate CIGS hull cell laser ablation monomer integrated package |
| CN106024969A (en) * | 2015-11-27 | 2016-10-12 | 上海空间电源研究所 | Flexible substrate silicon-based thin-film solar cell periphery laser insulation preparation method |
| CN106898665B (en) * | 2017-02-09 | 2019-01-29 | 北京四方创能光电科技有限公司 | A kind of tandem flexible thin-film solar cell component and preparation method thereof |
| CN108333234A (en) * | 2018-04-20 | 2018-07-27 | 河南科技大学 | A kind of use for electrochemical tests film sample and preparation method thereof |
| CN109273545B (en) * | 2018-11-01 | 2020-10-16 | 成都中建材光电材料有限公司 | Manufacturing method of cadmium telluride thin-film solar cell module |
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| CN101232055A (en) * | 2007-01-23 | 2008-07-30 | 李毅 | Flexible solar battery and manufacturing method thereof |
| CN101404296A (en) * | 2008-11-13 | 2009-04-08 | 中山大学 | Improved solar cell front electrode and its production method |
| CN101431127A (en) * | 2008-12-02 | 2009-05-13 | 华中科技大学 | Production method of flexible amorphous silicon thin-film solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232055A (en) * | 2007-01-23 | 2008-07-30 | 李毅 | Flexible solar battery and manufacturing method thereof |
| CN101404296A (en) * | 2008-11-13 | 2009-04-08 | 中山大学 | Improved solar cell front electrode and its production method |
| CN101431127A (en) * | 2008-12-02 | 2009-05-13 | 华中科技大学 | Production method of flexible amorphous silicon thin-film solar cell |
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