CN102270177A - Method for replacing EEPROM (Electrically-Erasable Programmable Read-Only Memory) with memory space of flash memory - Google Patents

Method for replacing EEPROM (Electrically-Erasable Programmable Read-Only Memory) with memory space of flash memory Download PDF

Info

Publication number
CN102270177A
CN102270177A CN2011101634212A CN201110163421A CN102270177A CN 102270177 A CN102270177 A CN 102270177A CN 2011101634212 A CN2011101634212 A CN 2011101634212A CN 201110163421 A CN201110163421 A CN 201110163421A CN 102270177 A CN102270177 A CN 102270177A
Authority
CN
China
Prior art keywords
memory
space
eeprom
flash
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011101634212A
Other languages
Chinese (zh)
Inventor
袁猛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Nanjing Plasma Co Ltd
Original Assignee
LG Electronics Nanjing Plasma Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Nanjing Plasma Co Ltd filed Critical LG Electronics Nanjing Plasma Co Ltd
Priority to CN2011101634212A priority Critical patent/CN102270177A/en
Publication of CN102270177A publication Critical patent/CN102270177A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention discloses a method for replacing an EEPROM (Electrically-Erasable Programmable Read-Only Memory) with a memory space of a flash memory. The memory space of the flash memory is divided into a program memory space and a data memory space, and the data memory space comprises 10 sub-spaces, so that the data memory space can realize 10 million times of reading-writing. The requirement on the EEPROM for 10 million times of reading-writing is met, and the space of the flash memory is sufficiently utilized to reduce cost.

Description

Use the method for the storage space replacement EEPROM of Flash flash memory
Technical field
The storage space that the present invention relates to a kind of Flash of use flash memory replaces the method for EEPROM, and is particularly a kind of by adjusting the method that Flash flash memory space structure makes Flash flash memory replacement EEPROM.
Background technology
In existing electronic product, in display, the general program of using Flash flash memory (Flash Memory) to come iatron, the data of using EEPROM (Electrically Erasable Programmable Read-Only Memory, EEPROM (Electrically Erasable Programmable Read Only Memo)) to come iatron.But, because that the needed program of existing display takes up room is all less, only take the part of Flash flash memory space, and other display data needs also to be stored among the EEPROM, so, waste caused.
Therefore, need a kind of new technical scheme to address the above problem.
Summary of the invention
At above-mentioned existing in prior technology problem and shortage, the storage space that the purpose of this invention is to provide a kind of Flash of use flash memory replaces the method for EEPROM.
For achieving the above object, the present invention uses the storage space of Flash flash memory to replace the method for EEPROM can adopt following technical scheme:
A kind of storage space that uses the Flash flash memory replaces the method for EEPROM, and the storage space of Flash flash memory is divided into program's memory space and data space, includes 10 sub spaces in the described data space.
The present invention is compared with prior art: by setting program storage space and data space, make originally data storage with the EEPROM storage to this data space.And because the read-write number of times of each storage space of Flash flash memory is 100,000 times, include 10 sub spaces in the data space, thereby can realize data space totally 100 ten thousand times read-write number of times, meet the read-write requirement of EEPROM 1,000,000 times, thereby make full use of the Flash flash memory space to reduce cost.
Description of drawings
Fig. 1 replaces the spatial design structural representation of Flash flash memory in the method for EEPROM for the present invention uses the storage space of Flash flash memory.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand following embodiment only is used to the present invention is described and is not used in and limit the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
The storage space that the present invention discloses a kind of Flash of use flash memory replaces the method for EEPROM, and the storage space of Flash flash memory is divided into program's memory space and data space, includes 10 sub spaces in the described data space.
See also shown in Figure 1ly, replace a kind of embodiment of the method for EEPROM for the storage space of above-mentioned use Flash flash memory.The storage space of the total 256K of this Flash flash memory, wherein with the storage space (comprising the storage space of 3 64K and the storage space of 1 24K) of 216K in order to as program's memory space; And with the storage space of remaining 40K as data space.Wherein, because the read-write number of times of each storage space of Flash flash memory is 100,000 times, the subspace that it is 4K that former data space with 40K is divided into 10 capacity, the read-write number of times of whole like this 40K data space can reach 1,000,000 times, meet the read-write requirement of EEPROM 1,000,000 times, so can make this 40K data space replace EEPROM.
The present invention is compared with prior art: by setting program storage space and data space, make originally data storage with the EEPROM storage to this data space.And because the read-write number of times of each storage space of Flash flash memory is 100,000 times, include 10 sub spaces in the data space, thereby can realize data space totally 100 ten thousand times read-write number of times meets the read-write requirement of EEPROM 1,000,000 times.At electronic product, in display, can use the present invention to use the storage space of Flash flash memory to replace the method for EEPROM to make that only using the Flash flash memory can be that stored programme is stored data again, need not to be provided with EEPROM again, thereby reduces cost in event.

Claims (1)

1. a method of using the storage space replacement EEPROM of Flash flash memory is characterized in that: the storage space of Flash flash memory is divided into program's memory space and data space, includes 10 sub spaces in the described data space.
CN2011101634212A 2011-06-17 2011-06-17 Method for replacing EEPROM (Electrically-Erasable Programmable Read-Only Memory) with memory space of flash memory Pending CN102270177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011101634212A CN102270177A (en) 2011-06-17 2011-06-17 Method for replacing EEPROM (Electrically-Erasable Programmable Read-Only Memory) with memory space of flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101634212A CN102270177A (en) 2011-06-17 2011-06-17 Method for replacing EEPROM (Electrically-Erasable Programmable Read-Only Memory) with memory space of flash memory

Publications (1)

Publication Number Publication Date
CN102270177A true CN102270177A (en) 2011-12-07

Family

ID=45052485

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101634212A Pending CN102270177A (en) 2011-06-17 2011-06-17 Method for replacing EEPROM (Electrically-Erasable Programmable Read-Only Memory) with memory space of flash memory

Country Status (1)

Country Link
CN (1) CN102270177A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106021122A (en) * 2016-05-12 2016-10-12 青岛海信宽带多媒体技术有限公司 Writing method and apparatus for flash data in optical module
CN106440256A (en) * 2016-11-11 2017-02-22 四川长虹电子部品有限公司 Remote controller for air conditioner and data storage method of remote controller

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101321250A (en) * 2008-07-03 2008-12-10 四川长虹电器股份有限公司 Television set important data storage method
CN101551780A (en) * 2008-12-29 2009-10-07 深圳创维-Rgb电子有限公司 Television and data storage method and device thereof
CN101799787A (en) * 2010-03-26 2010-08-11 四川长虹电器股份有限公司 Storage method of television user data in flash

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101321250A (en) * 2008-07-03 2008-12-10 四川长虹电器股份有限公司 Television set important data storage method
CN101551780A (en) * 2008-12-29 2009-10-07 深圳创维-Rgb电子有限公司 Television and data storage method and device thereof
CN101799787A (en) * 2010-03-26 2010-08-11 四川长虹电器股份有限公司 Storage method of television user data in flash

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106021122A (en) * 2016-05-12 2016-10-12 青岛海信宽带多媒体技术有限公司 Writing method and apparatus for flash data in optical module
CN106440256A (en) * 2016-11-11 2017-02-22 四川长虹电子部品有限公司 Remote controller for air conditioner and data storage method of remote controller

Similar Documents

Publication Publication Date Title
CN101930404B (en) Memory device and operation method thereof
CN104102585B (en) Map information recording method, Memory Controller and memorizer memory devices
US9690695B2 (en) Data storage device and flash memory control method thereof
US8645613B2 (en) Data writing method for flash memory and control circuit and storage system using the same
CN101782871B (en) Information processing device, processor and memory management method
US9208074B2 (en) Updating address mapping in sub-intervals in a flash memory data storage device
CN106873908B (en) Date storage method and device
CN102043721A (en) Memory management method for flash memory
CN103608782A (en) Selective data storage in LSB and MSB pages
CN102981959A (en) Solid-state memory device and control method of rubbish collection action thereof
CN101656106A (en) Method for writing data into EEPROM and device thereof
US20140328127A1 (en) Method of Managing Non-Volatile Memory and Non-Volatile Storage Device Using the Same
CN102339254A (en) Flash data storage method for intelligent electric energy meter
CN103365786A (en) Data storage method, device and system
CN104317739A (en) Hybrid memory paging method and device
CN102541755B (en) The method of flash memories and reception data thereof
CN103294607A (en) Memory management method
CN105630701B (en) Data storage device and the reading/writing method for using unavailable page table or unavailable piece of table
CN104361907B (en) A kind of method of counting of FLASH memory
CN109960471A (en) Date storage method, device, equipment and storage medium
CN106354658A (en) Method for reducing memory resource occupation of mapping tables in hybrid mapping algorithm
CN103064633A (en) Data storage method and device
TWI450271B (en) Method for managing a plurality of blocks of a flash memory, and associated memory device and controller thereof
CN101105752A (en) Processing method for embedded type system using NAND flash memory storage and start-up
CN101446927B (en) Flash memory system and control method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20111207