CN102268643B - Multi-channel laser coating method for preparing cerium dioxide seed layer - Google Patents

Multi-channel laser coating method for preparing cerium dioxide seed layer Download PDF

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CN102268643B
CN102268643B CN 201110197344 CN201110197344A CN102268643B CN 102268643 B CN102268643 B CN 102268643B CN 201110197344 CN201110197344 CN 201110197344 CN 201110197344 A CN201110197344 A CN 201110197344A CN 102268643 B CN102268643 B CN 102268643B
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seed layer
laser
base band
ceo
argon
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CN102268643A (en
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李贻杰
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Shanghai Superconducting Technology Co., Ltd.
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SHANGHAI SUPERCONDUCTING TECHNOLOGY Co Ltd
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Abstract

The invention discloses a multi-channel laser coating method for preparing a cerium dioxide seed layer. According to the invention, a multi-channel transmission device is adopted; the cerium dioxide seed layer is prepared on an annealed nickel-tungsten metal base band through a multi-channel laser evaporation coating method; in the coating process, the coating speed of the cerium dioxide seed layer on the base band is greatly accelerated through winding repeatedly the nickel-tungsten metal base band on a roll shaft and passing through a coating region, can reach over one hundred meters per hour and is suitable for kilometer-level long band preparation; the atmosphere adopted when the method is used for coating is a mixed gas of argon and hydrogen, the argon is am inert gas and mainly plays a buffer function, and the hydrogen has the main function of consuming residual oxygen in the coating cavity in the coating process, so that baseband surface oxidation which can be generated under the condition of high-temperature coating and affects the orientation of the cerium dioxide seed layer is avoided; in addition, the coating atmosphere is the mixed gas of argon and hydrogen so that the requirement on base vacuum degree of a coating system can be greatly reduced, the equipment investment is saved, and the band material cost is reduced.

Description

Preparation CeO 2The multi-channel laser film coating method of Seed Layer
Technical field
The present invention relates to s-generation rare earth oxide belt material of high temperature superconduct field, relate in particular to and a kind ofly prepare CeO at nickel-tungsten metal base band 2The multi-channel laser film coating method of Seed Layer.
Background technology
When preparing rare earth oxide (REBCO) superconducting layer take the biaxial texture nickel-tungsten as base band, between nickel-tungsten metal base band and the rare earth oxide superconducting layer chemical mutual diffusion can occur, and then destroy supraconductivity, so can not directly plate superconducting layer at metal base band.The terms of settlement that the experiment proved that is to plate first the highly stable oxide-isolation layer of one deck chemical property on metal base band, and then plating rare earth oxide superconducting layer.Oxide-isolation layer is three-layer composite structure (cap layer/buffer layer/Seed Layer), such as CeO 2/ YSZ/CeO 2, or CeO 2/ YSZ/Y 2O 3The first layer oxide compound (the CeO that directly contacts with nickel-tungsten metal base band 2Or Y 2O 3) be called Seed Layer.The function of Seed Layer is equivalent to provide template for follow-up epitaxy.Middle layer YSZ(chemical name is yttrium stable zirconium oxide) be called buffer layer, its function is to stop that atoms metal is to the superconducting layer internal diffusion in nickel-tungsten metal base band.Although buffer layer YSZ can stop chemical mutual diffusion well, because the lattice constant mismatch degree of its lattice parameter and rare earth oxide is larger, so direct its superconductivity of superconducting layer for preparing at YSZ is relatively poor.In order to improve the lattice mismatch between REBCO and the YSZ, need on the YSZ buffer layer, plate again one deck CeO 2Layer is called cap layer.Because CeO 2And the lattice mismatch between the REBCO is very little, so at CeO 2The REBCO superconducting layer for preparing on the cap layer has texture degree in good crystallinity and the face.So the REBCO superconducting layer has very high critical current density, greater than 1 * 10 6Ampere/square centimeter (at 77K, under field condition).Belt material of high temperature superconduct current capacity by above structure preparation surpasses 100 amperes, can satisfy the basic demand of all kinds of device application.
Prepare CeO at nickel-tungsten metal base band 2Or Y 2O 3During Seed Layer, Major Difficulties is to prevent the metal base band surface oxidation.The company (American Superconductor Corperation, Sumitomo Electric Industrial) of the states such as the U.S., Japan adopts electron beam evaporation or magnetron sputtering technique to prepare Seed Layer at present.When adopting this two kinds of methods, have following shortcoming: (1) is because required metal base band underlayer temperature is higher, so form very thin nickel oxide layer on the metal base band surface easily.So in the Seed Layer preparation process, form CeO 2Or Y 2O 3(001) single-orientated parameter area is narrower, affects the yield rate of Seed Layer preparation.(2) adopt electron beam evaporation or magnetron sputtering technique to prepare Seed Layer, the surface shape of vaporator rate or sputter rate and evaporation source or magnetic control spattering target is closely related.So when utilizing this two kinds of long bands of method preparation kilometer level, can there be error in the thickness of starting end and concluding paragraph Seed Layer.In addition, because the preparation technology of superconducting layer is very responsive to the thickness of Seed Layer, so the deviation of seed layer thickness can affect the stability of superconducting layer coating process, and and then make the homogeneity variation of belt material of high temperature superconduct superconductivity.And belt material of high temperature superconduct homogeneity along its length is that manufacturing superconducting power device is essential.
Summary of the invention
The present invention is directed to the deficiency that prior art exists, provide a kind of and prepare CeO at nickel-tungsten metal base band 2The multi-channel laser film coating method of Seed Layer, the CeO for preparing 2The Seed Layer stable chemical nature has single (001) orientation, and thickness error is little, and surface smoothness is good.
In order to achieve the above object, the invention provides and a kind ofly prepare CeO at nickel-tungsten metal base band 2The multi-channel laser film coating method of Seed Layer, the method includes the steps of:
Step 1, biaxial texture nickel-tungsten metal base band twined be arranged in the multi-channel laser coating system;
Step 2, biaxial texture nickel-tungsten metal base band is annealed;
After step 3, annealing process finish, keep argon gas and hydrogen flowing quantity and constant rate, the total gas pressure of argon-hydrogen mixed gas is reduced to CeO 2The value that the Seed Layer coating process is required;
Step 4, heater temperature is adjusted to CeO 2The temperature value that the Seed Layer coating process is required;
Step 5, start laser target rotation and scanning system;
Step 6, start excimer laser, and laser energy and frequency are raised to CeO 2The value that the Seed Layer coating process is required;
Step 7, etc. after air pressure, temperature, laser energy, the laser frequency stabilization, open the laser optical path switch, beginning laser target surface prevapourising process;
Step 8, etc. after the ellipsoid shape plasma stability that forms of laser evaporation, start the step motor control switch of multi-channel transmission device, and the speed of travel of biaxial texture nickel-tungsten base band is transferred to required value, carry out plated film, biaxial texture nickel-tungsten metal base band is by repeatedly being wrapped in the roll shaft of multi-channel transmission device, Multiple through then out plated film district;
Step 9, finish plated film after, close the laser optical path switch, close the heater power source switch, close argon-hydrogen mixed gas mass flowmeter valve, progressively reduce laser frequency and close excimer laser.
Described step 1 comprises following steps:
Step 1.1, an end of biaxial texture nickel-tungsten metal base band is wrapped on the first reel;
Step 1.2, traction biaxial texture nickel-tungsten metal base band repeatedly are wrapped on the roll shaft of multi-channel transmission device, form the multiple tracks metal base band between roll shaft;
Step 1.3, the other end of biaxial texture nickel-tungsten metal base band is fixed on the second reel.
Described step 2 comprises following steps:
Step 2.1, close the Vacuum door of coating system, and be evacuated to required vacuum tightness 1 * 10 -7-1 * 10 -6Torr;
Step 2.2, startup well heater, and be warming up to required annealing temperature, 700-900 OC
Step 2.3, argon-hydrogen mixed gas is passed into coating system, and total gas pressure is controlled at required atmospheric pressure value;
In argon-hydrogen mixed gas, Ar argon gas volume ratio is 85%-97%, H 2The hydrogen volume ratio is 3%-15%;
Total gas pressure during annealing is 0.05-1.0Torr;
The ratio of argon gas and hydrogen partial pressure is controlled by mass-flow gas meter, and the hydrogen flowing quantity ratio is in the 3%-15% scope;
Step 2.4, after the total gas pressure of argon-hydrogen mixed gas and annealing temperature are stable, begin annealing process by required speed, remove the native oxide layer on nickel-tungsten base band surface;
Encoder and step motor control annealing speed make biaxial texture nickel-tungsten base band by the roll shaft winding of multi-channel transmission device, Multiple through then out well heater.
In the described step 3, the required value of Seed Layer coating process is 1 * 10 -4-1 * 10 -2Torr.
In the described step 4, CeO 2The required temperature value of Seed Layer coating process is 600-800 OC
In the described step 6, laser energy and frequency are: E=250mJ-450mJ, f=50Hz-200Hz.
In the described step 7, evaporative process continues 5 minutes.
In the described step 8, the speed of travel is 20m/h-200m/h.
Behind the completing steps 9, drop to 50 etc. heater temperature OCBelow, open the nitrogen charging valve, make inflated with nitrogen to 1 normal atmosphere in the vacuum chamber.
Behind the completing steps 9, in the situation of not opening coating system vacuum chamber door, change target by original position, directly begin lower one coating process.
The present invention adopts the multi-channel laser coating technique to replace electron beam evaporation and magnetron sputtering technique to prepare CeO 2Seed Layer.Because Ultra-Violet Laser has higher photon energy (wavelength is at 193-308nm), thus higher kinetic energy had by absorbing incident laser energy from the plasma body that the target evaporation forms, thus effectively reduce preparation CeO 2The base reservoir temperature that Seed Layer is required.In addition, because Ce atomic chemistry character is comparatively active, be easy to form the more stable CeO of chemical property 2Molecule, and the bonding force of Ce and O atom is stronger is so the plasma body that forms by laser evaporation is mainly with CeO 2Molecular state exists.Therefore, prepare CeO by the laser evaporation method 2During film, in the situation that need not logical oxygen, still can obtain the comparatively stable CeO of chemical property 2Film, but not Ce metallic membrane.By control Ar+H 2The parameters such as mixed gas air pressure, underlayer temperature, laser energy, laser pulse number are strictly controlled CeO 2The orientation of Seed Layer, thickness and surface smoothness.Make the long band CeO of kilometer level 2Seed Layer has single (001) orientation, and surfaceness is less than 3 nanometers, and thickness error is less than 5 nanometers (50 ± 5) nm.
Description of drawings
Fig. 1 is that multi-channel laser evaporation technique of the present invention prepares CeO at biaxial texture nickel-tungsten metal base band 2The principle schematic of Seed Layer;
Fig. 2 adopts multi-channel laser evaporation technique of the present invention at CeO that biaxial texture nickel-the tungsten metal base band prepares 2The X-ray diffraction spectrum of Seed Layer and the graph of a relation between the laser energy;
Shown in Figure 3 is to adopt the multi-channel laser evaporation technique at CeO that biaxial texture nickel-the tungsten metal base band prepares 2The X-ray diffraction spectrum of Seed Layer and the graph of a relation between the underlayer temperature;
Fig. 4 adopts the multi-channel laser evaporation technique at CeO that biaxial texture nickel-the tungsten metal base band prepares 2The face interscan X-ray diffraction figure of Seed Layer;
Fig. 5 is the face interscan X-ray diffraction figure of nickel-tungsten metal base band.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated, present embodiment is implemented under take technical solution of the present invention as prerequisite, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, be that multi-channel laser evaporation technique of the present invention prepares CeO at biaxial texture nickel-tungsten metal base band 2The principle schematic of Seed Layer.Among the figure: metal base band 1, the first roll shaft 2, well heater 3, the second roll shaft 4, laser evaporation bundle 5.Metal base band 1 is wrapped on the first roll shaft 2 and the second roll shaft 4, and between the first roll shaft 2, the second roll shaft 4 certain distance is arranged, well heater 3 just is arranged between this two roll shaft, multiple laser evaporation bundle 5 is in the below of metal base band 1 and well heater 3, and these parts form the multi-channel laser coating system.Wherein the first roll shaft 2 and the second roll shaft 4 are the parts that consist of multi-channel transmission device, and correspondence is provided with the multiple tracks groove on the first roll shaft 2 and the second roll shaft 4, is convenient to metal base band 1 repeatedly winding and transmission thereon.
Embodiment 1
Present embodiment provides a kind ofly prepares CeO at nickel-tungsten metal base band 2The multi-channel laser film coating method of Seed Layer comprises following steps:
Step 1, biaxial texture nickel-tungsten metal base band repeatedly twined be arranged in the multi-channel laser coating system;
Step 1.1, an end of biaxial texture nickel-tungsten metal base band is wrapped on the first reel;
Step 1.2, traction biaxial texture nickel-tungsten metal base band repeatedly are wrapped on two roll shafts of multi-channel transmission device;
Step 1.3, the other end of biaxial texture nickel-tungsten metal base band is fixed on the second reel;
Step 2, biaxial texture nickel-tungsten metal base band is annealed;
Step 2.1, close the Vacuum door of coating system, and be evacuated to 1 * 10 -7Torr;
Step 2.2, startup well heater, and be warming up to required annealing temperature 700 OC
Step 2.3, argon-hydrogen mixed gas is passed into coating system, and total gas pressure is controlled at required atmospheric pressure value; In argon-hydrogen mixed gas, Ar argon gas volume ratio is 85%%, H 2The hydrogen volume ratio is 15%; Total gas pressure during annealing is 0.05Torr; The ratio of argon gas and hydrogen partial pressure is controlled by mass-flow gas meter, and the hydrogen flowing quantity ratio is 15%;
Step 2.4, after the total gas pressure of argon-hydrogen mixed gas and annealing temperature are stable, begin annealing process by required speed, remove the native oxide layer on nickel-tungsten base band surface; Wherein adopt encoder and step motor control annealing speed, make biaxial texture nickel-tungsten base band by the roll shaft winding of multi-channel transmission device, Multiple through then out well heater;
After step 3, annealing process finish, keep argon gas and hydrogen flowing quantity and constant rate, by control molecular pump flashboard valve the total gas pressure of argon-hydrogen mixed gas is reduced to CeO 2The value 1 * 10 that the Seed Layer coating process is required -4Torr;
Step 4, heater temperature is adjusted to CeO 2The value 600 that the Seed Layer coating process is required OC
Step 5, start laser target rotation and scanning system;
Step 6, start excimer laser, and laser energy and frequency are raised to CeO 2The value that the Seed Layer coating process is required, E=250mJ, f=50Hz;
Step 7, etc. after air pressure, temperature, laser energy, the laser frequency stabilization, open the laser optical path switch, beginning laser target surface prevapourising process, this process approximately continue 5 minutes;
Step 8, etc. after the ellipsoid shape plasma stability that forms of laser evaporation, start the step motor control switch of multi-channel transmission device, and the speed of travel of biaxial texture nickel-tungsten base band be transferred to 20m/h, carry out plated film; Biaxial texture nickel-tungsten metal base band is wrapped in the roll shaft of multi-channel transmission device, Multiple through then out plated film district by multiple tracks;
Step 9, finish plated film after, close the laser optical path switch, close the heater power source switch, close argon-hydrogen mixed gas mass flowmeter valve, progressively reduce laser frequency and close excimer laser;
Behind the completing steps 9, drop to 50 etc. heater temperature OCBelow, open the nitrogen charging valve, make inflated with nitrogen to 1 normal atmosphere in the vacuum chamber;
Behind the completing steps 9, also can in the situation of not opening coating system vacuum chamber door, change target by original position, directly begin lower one coating process.
Embodiment 2
Present embodiment provides a kind ofly prepares CeO at nickel-tungsten metal base band 2The multi-channel laser film coating method of Seed Layer comprises following steps:
Step 1, biaxial texture nickel-tungsten metal base band repeatedly twined be arranged in the multi-channel laser coating system;
Step 1.1, an end of biaxial texture nickel-tungsten metal base band is wrapped on the first reel;
Step 1.2, traction biaxial texture nickel-tungsten metal base band repeatedly are wrapped on two roll shafts of multi-channel transmission device;
Step 1.3, the other end of biaxial texture nickel-tungsten metal base band is fixed on the second reel;
Step 2, biaxial texture nickel-tungsten metal base band is annealed;
Step 2.1, close the Vacuum door of coating system, and be evacuated to 1 * 10 -6Torr;
Step 2.2, startup well heater, and be warming up to required annealing temperature 900 OC
Step 2.3, argon-hydrogen mixed gas is passed into coating system, and total gas pressure is controlled at required atmospheric pressure value; In argon-hydrogen mixed gas, Ar argon gas volume ratio is 97%, H 2The hydrogen volume ratio is 3%; Total gas pressure during annealing is 1.0Torr; The ratio of argon gas and hydrogen partial pressure is controlled by mass-flow gas meter, and the hydrogen flowing quantity ratio is 3%;
Step 2.4, after the total gas pressure of argon-hydrogen mixed gas and annealing temperature are stable, begin annealing process by required speed, remove the native oxide layer on nickel-tungsten base band surface; Wherein adopt encoder and step motor control annealing speed, make biaxial texture nickel-tungsten base band by the roll shaft winding of multi-channel transmission device, Multiple through then out well heater;
After step 3, annealing process finish, keep argon gas and hydrogen flowing quantity and constant rate, by control molecular pump flashboard valve the total gas pressure of argon-hydrogen mixed gas is reduced to CeO 2The value 1 * 10 that the Seed Layer coating process is required -2Torr;
Step 4, heater temperature is adjusted to CeO 2The value 800 that the Seed Layer coating process is required OC
Step 5, start laser target rotation and scanning system;
Step 6, start excimer laser, and laser energy and frequency are raised to CeO 2The value that the Seed Layer coating process is required, E=450mJ, f=200Hz;
Step 7, etc. after air pressure, temperature, laser energy, the laser frequency stabilization, open the laser optical path switch, beginning laser target surface prevapourising process, this process approximately continue 5 minutes;
Step 8, etc. after the ellipsoid shape plasma stability that forms of laser evaporation, start the step motor control switch of multi-channel transmission device, and the speed of travel of biaxial texture nickel-tungsten base band be transferred to 200m/h, carry out plated film; Biaxial texture nickel-tungsten metal base band is wrapped in the roll shaft of multi-channel transmission device, Multiple through then out plated film district by multiple tracks;
Step 9, finish plated film after, close the laser optical path switch, close the heater power source switch, close argon-hydrogen mixed gas mass flowmeter valve, progressively reduce laser frequency and close excimer laser;
Behind the completing steps 9, drop to 50 etc. heater temperature OCBelow, open the nitrogen charging valve, make inflated with nitrogen to 1 normal atmosphere in the vacuum chamber;
Behind the completing steps 9, also can in the situation of not opening coating system vacuum chamber door, change target by original position, directly begin lower one coating process.
Embodiment 3
Present embodiment provides a kind ofly prepares CeO at nickel-tungsten metal base band 2The multi-channel laser film coating method of Seed Layer comprises following steps:
Step 1, biaxial texture nickel-tungsten metal base band repeatedly twined be arranged in the multi-channel laser coating system;
Step 1.1, an end of biaxial texture nickel-tungsten metal base band is wrapped on the first reel;
Step 1.2, traction biaxial texture nickel-tungsten metal base band repeatedly are wrapped on two roll shafts of multi-channel transmission device;
Step 1.3, the other end of biaxial texture nickel-tungsten metal base band is fixed on the second reel;
Step 2, biaxial texture nickel-tungsten metal base band is annealed;
Step 2.1, close the Vacuum door of coating system, and be evacuated to 0.5 * 10 -6Torr;
Step 2.2, startup well heater, and be warming up to required annealing temperature 800 OC
Step 2.3, argon-hydrogen mixed gas is passed into coating system, and total gas pressure is controlled at required atmospheric pressure value; In argon-hydrogen mixed gas, Ar argon gas volume ratio is 90%, H 2The hydrogen volume ratio is 10%; Total gas pressure during annealing is 0.5Torr; The ratio of argon gas and hydrogen partial pressure is controlled by mass-flow gas meter, and the hydrogen flowing quantity ratio is 10%;
Step 2.4, after the total gas pressure of argon-hydrogen mixed gas and annealing temperature are stable, begin annealing process by required speed, remove the native oxide layer on nickel-tungsten base band surface; Wherein adopt encoder and step motor control annealing speed, make biaxial texture nickel-tungsten base band by the roll shaft winding of multi-channel transmission device, Multiple through then out well heater;
After step 3, annealing process finish, keep argon gas and hydrogen flowing quantity and constant rate, by control molecular pump flashboard valve the total gas pressure of argon-hydrogen mixed gas is reduced to CeO 2The value 1 * 10 that the Seed Layer coating process is required -3Torr;
Step 4, heater temperature is adjusted to CeO 2The value 700 that the Seed Layer coating process is required OC
Step 5, start laser target rotation and scanning system;
Step 6, start excimer laser, and laser energy and frequency are raised to CeO 2The value that the Seed Layer coating process is required, E=350mJ, f=100Hz;
Step 7, etc. after air pressure, temperature, laser energy, the laser frequency stabilization, open the laser optical path switch, beginning laser target surface prevapourising process, this process approximately continue 5 minutes;
Step 8, etc. after the ellipsoid shape plasma stability that forms of laser evaporation, start the step motor control switch of multi-channel transmission device, and the speed of travel of biaxial texture nickel-tungsten base band be transferred to 100m/h, carry out plated film; Biaxial texture nickel-tungsten metal base band is wrapped in the roll shaft of multi-channel transmission device, Multiple through then out plated film district by multiple tracks;
Step 9, finish plated film after, close the laser optical path switch, close the heater power source switch, close argon-hydrogen mixed gas mass flowmeter valve, progressively reduce laser frequency and close excimer laser;
Behind the completing steps 9, drop to 50 etc. heater temperature OCBelow, open the nitrogen charging valve, make inflated with nitrogen to 1 normal atmosphere in the vacuum chamber;
Behind the completing steps 9, also can in the situation of not opening coating system vacuum chamber door, change target by original position, directly begin lower one coating process.
Fig. 2 adopts multi-channel laser evaporation technique of the present invention at CeO that biaxial texture nickel-the tungsten metal base band prepares 2The X-ray diffraction spectrum of Seed Layer and the relation between the laser energy.In very wide laser pulse energy weight range, all can obtain single (001) orientation.Proof adopts the multi-channel laser evaporation technique to prepare CeO at biaxial texture nickel-tungsten metal base band 2During Seed Layer, coating process has good controllability.Diffracted intensity: (a) 4000mJ; (b) 350mJ; (c) 300mJ; (d) 250mJ.
Shown in Figure 3 is to adopt the multi-channel laser evaporation technique at CeO that biaxial texture nickel-the tungsten metal base band prepares 2The X-ray diffraction spectrum of Seed Layer and the relation between the underlayer temperature.（a）650 ?oC；（b）675 ?oC；（c）700 ?oC；（d）725 ?oC
Fig. 4 adopts the multi-channel laser evaporation technique at CeO that biaxial texture nickel-the tungsten metal base band prepares 2The face interscan X-ray diffraction figure of Seed Layer, Fig. 5 are the face interscan X-ray diffraction figure of nickel-tungsten metal base band.Quadruple asymmetrical diffraction peak only appears in scanning X-ray diffraction spectrum, and CeO is described 2Film has single (001) orientation, and texture degree (X-ray diffraction peak peak width at half height) is 6 degree, is better than the texture degree (7 degree) of nickel-base strip.
The present invention adopts multi-channel transmission device, prepares CeO by multi-channel laser evaporation coating method on the RABiTS base band after the annealing 2Seed Layer.In coating process, twine Multiple through then out plated film district by roll shaft, thereby greatly accelerated CeO on the RABiTS base band 2The Seed Layer coating speed per hour can reach more than hundred meters, is suitable for the preparation of the long band of kilometer level.The atmosphere that adopts during plated film of the present invention is the mixed gas of argon gas and hydrogen.Argon gas is rare gas element, mainly plays shock absorption.Hydrogen (H 2) Main Function be in coating process, to consume residual oxygen in the plated film chamber, thereby to prevent that RABiTS base band surface oxidation affects CeO in high temperature plated film situation 2The orientation of Seed Layer.In addition, the mixed gas of plated film atmosphere employing argon gas and hydrogen can reduce the requirement to coating system base vacuum degree greatly, saves facility investment, reduces the band cost.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (6)

1. one kind prepares CeO 2The multi-channel laser film coating method of Seed Layer is characterized in that the method includes the steps of:
Step 1, biaxial texture nickel-tungsten metal base band repeatedly twined be arranged in the multi-channel laser coating system;
Step 2, biaxial texture nickel-tungsten metal base band is annealed;
After step 3, annealing process finish, keep argon gas and hydrogen flowing quantity and constant rate, the total gas pressure of argon-hydrogen mixed gas is reduced to CeO 2The value that the Seed Layer coating process is required;
Step 4, heater temperature is adjusted to CeO 2The temperature value that the Seed Layer coating process is required;
Step 5, start laser target rotation and scanning system;
Step 6, start excimer laser, and laser energy and frequency are raised to CeO 2The value that the Seed Layer coating process is required;
Step 7, etc. after air pressure, temperature, laser energy, the laser frequency stabilization, open the laser optical path switch, beginning laser target surface prevapourising process;
Step 8, etc. after the ellipsoid shape plasma stability that forms of laser evaporation, start the step motor control switch of multi-channel transmission device, and the speed of travel of biaxial texture nickel-tungsten base band is transferred to required value, carry out plated film, biaxial texture nickel-tungsten metal base band is by repeatedly being wrapped in the roll shaft of multi-channel transmission device, Multiple through then out plated film district;
Step 9, finish plated film after, close the laser optical path switch, close the heater power source switch, close argon-hydrogen mixed gas mass flowmeter valve, progressively reduce laser frequency and close excimer laser; Described step 1 comprises following steps:
Step 1.1, an end of biaxial texture nickel-tungsten metal base band is wrapped on the first reel;
Step 1.2, traction biaxial texture nickel-tungsten metal base band repeatedly are wrapped on the roll shaft of multi-channel transmission device, form the multiple tracks metal base band between roll shaft;
Step 1.3, the other end of biaxial texture nickel-tungsten metal base band is fixed on the second reel; Described step 2 comprises following steps:
Step 2.1, close the vacuum chamber door of coating system, and be evacuated to required vacuum tightness 0.5 * 10 -6-1 * 10 -6Torr;
Step 2.2, startup well heater, and be warming up to required annealing temperature, 800-900 ℃;
Step 2.3, argon hydrogen mixture is passed into coating system, and total gas pressure is controlled at required atmospheric pressure value; In argon-hydrogen mixed gas, Ar argon gas volume ratio is 85%-97%, H 2The hydrogen volume ratio is 3%-15%; Total gas pressure during annealing is 0.05-1.0Torr; The ratio of argon gas and hydrogen partial pressure is controlled by mass-flow gas meter, and the hydrogen flowing quantity ratio is in the 3%-15% scope;
Step 2.4, after the total gas pressure of argon-hydrogen mixed gas and annealing temperature are stable, begin annealing process by required speed, remove the native oxide layer on nickel-tungsten base band surface; Wherein adopt encoder and step motor control annealing speed, make biaxial texture nickel-tungsten base band by the roll shaft winding of multi-channel transmission device, Multiple through then out well heater;
In the described step 6, laser energy and frequency are: E=250mJ-450mJ, f=50Hz-200Hz;
In the described step 8, the speed of travel is 100m/h-200m/h.
2. preparation CeO as claimed in claim 1 2The multi-channel laser film coating method of Seed Layer is characterized in that, in the described step 3, the total gas pressure of argon-hydrogen mixed gas that the Seed Layer coating process is required is 1 * 10 -4-1 * 10 -2Torr.
3. preparation CeO as claimed in claim 1 2The multi-channel laser film coating method of Seed Layer is characterized in that, in the described step 4, and CeO 2The required temperature value of Seed Layer coating process is 600-800 ℃.
4. preparation CeO as claimed in claim 1 2The multi-channel laser film coating method of Seed Layer is characterized in that, in the described step 7, evaporative process continues 5 minutes.
5. preparation CeO as claimed in claim 1 2The multi-channel laser film coating method of Seed Layer is characterized in that, behind the completing steps 9, drops to below 50 ℃ etc. heater temperature, opens the nitrogen charging valve, makes inflated with nitrogen to 1 normal atmosphere in the vacuum chamber.
6. preparation CeO as claimed in claim 1 2The multi-channel laser film coating method of Seed Layer is characterized in that, behind the completing steps 9, in the situation of not opening coating system vacuum chamber door, changes target by original position, directly begins lower one coating process.
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