CN102262351B - Photomask layer and its formation method - Google Patents
Photomask layer and its formation method Download PDFInfo
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- CN102262351B CN102262351B CN 201010188921 CN201010188921A CN102262351B CN 102262351 B CN102262351 B CN 102262351B CN 201010188921 CN201010188921 CN 201010188921 CN 201010188921 A CN201010188921 A CN 201010188921A CN 102262351 B CN102262351 B CN 102262351B
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Abstract
The invention provides a photomask layer and a formation method thereof, the method comprises: a semiconductor basement is provided by comprising a substrate and a film required to be etched on the substrate; an all-reflecting film is formed on the film required to be etched, a photoetching glue layer is formed on the all-reflecting film, the surface of the all-reflecting film which faces a photoetching glue layer is a transmission plane, the surface of the all-reflecting film which faces the photoetching glue layer is a reflection plane. The invention is capable of raising the exposal effect of the photomask layer.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of photomask layer and forming method thereof.
Background technology
In semiconductor is made; before etching, usually need to form photomask layer at rete to be etched; then utilize photoetching process in photomask layer, to form opening; described opening will carry out the position exposure that etching is removed with rete; with all the other guarded by locations; thereby after etching, just obtained the etching figure, then the photomask layer removal has been got final product.
But the photomask layer that classic method forms only comprises photoresist layer (PR) usually, during step of exposure in carrying out photoetching, incident ray enters photoresist layer through photomask board, in photoresist layer, form pattern, the to be etched rete of part incident ray under photoresist layer and photoresist layer is reflected back toward photoresist layer at the interface, another part incident ray enters rete to be etched, when the substrate reflective is very strong, such as metal, polysilicon, then incident ray is entered rete to be etched by the boundary reflection of layer to be etched and substrate, then enters photoresist layer through superrefraction.As shown in Figure 1, incident ray S1 arrives the interface of photoresist layer 10 and rete 20 to be etched through photoresist layer 10, be decomposed into reflection ray S2 and refracted ray S3, because substrate 30 has strong reflection, refracted ray S3 reflects back into photoresist layer 10 again, be light S4, light S2, the S4 frequency is identical, when the optical path difference of the two satisfies the integral multiple of incident ray S1 half-wavelength, film interference occuring, the enhancement region occurs interfering and weaken the district, will occur standing wave effect or other light reflection effect during development, reduce the resolution of pattern when developing, caused the CD loss.After the IC live width narrowed down to 0.13un or 90mn, 65nm and 32nm by 0.35um, therefore the control of CD loss must eliminate standing wave effect with regard to ever more important.
A kind of " method for making of semiconductor anti-reflective layer " for example disclosed in the patent documentation of application number " 200510111415 ", the method is by forming organic counnter attack layer 15 in photoresist layer 10 lower floors, as shown in Figure 2: organic counnter attack layer (ARC) 15 has identical refractive index and extinction coefficient with PR10, incident light directly enters ARC15 through PR10, interface at the two is not reflected substantially, after incident light enters ARC15 and rete to be etched 20, after arriving the interface of rete 20 to be etched and substrate 30, reflection enters ARC15, reflected light is all absorbed by ARC15, therefore can not have above-mentioned said standing wave effect.
Also having a kind of classic method is by forming DARC (dielectric ARC in PR lower floor, SION) film, as shown in Figure 3: incident ray S1 resolves into reflection ray S5 and refracted ray S6 at the interface of PR10 and SION16, and refracted ray S6 is reflected back among the PR10 by substrate 30 again, be reflection ray S7, because reflection ray S5, the S7 same frequency, out of phase, adjust the thickness of SION layer 16, so that two bundle reflection ray S5, the optical path difference of S7 is the odd-multiple of half-wavelength, then the two produces to interfere and disappears mutually, therefore can not produce standing wave effect, has reduced the impact of reflected light on exposure technology.
Although above-mentioned two kinds of methods can both be eliminated standing wave effect, and shortcoming is also respectively arranged:
1, organic counnter attack layer: outstanding Xu of organism is affected by the substrate pattern larger at substrate surface, can't satisfy PR to the demand of processing procedure planarization, therefore this method IC processing procedure that fades out gradually.
2, the variation of DARC film:SiON layer thickness, refractive index and extinction coefficient, the capital exerts an influence to conditions of exposure, and the at present processing procedure of CVD control also can't effective monitoring SiON membranous layer property variation on the impact of photo CD, therefore also there is huge defective in this method.
Summary of the invention
The technical matters that the present invention solves is to improve the exposure effect of photomask layer.
In order to address the above problem, the invention provides a kind of formation method of photomask layer, comprise step:
Semiconductor base is provided, and it comprises substrate, and is positioned at the rete to be etched on the substrate;
Form the film that is all-trans at described rete to be etched;
Form photoresist layer at the described film that is all-trans, the described film that is all-trans is transmission plane towards the surface of photoresist layer, and the described film that is all-trans is reflecting surface towards the surface of rete to be etched.
Preferably, described transmission plane be light from the direction incident of photoresist layer, and enter the surface of the film that is all-trans; Described reflecting surface is light from the direction incident of the rete to be etched film that is all-trans, and is reflected back toward the surface of rete to be etched.
Preferably, the method that forms the film that is all-trans at described semiconductor base is CVD or PVD.
Preferably, the material of the described film that is all-trans is carbon-silicon compound.
Preferably, the CVD method reaction raw materials that forms the film that is all-trans comprises silane and hydrocarbon.
Preferably, the CVD method forms the parameter of the film that is all-trans and is: chamber pressure is 1Torr～10Torr, radio-frequency voltage power 150W～1000W, frequency 100KHZ～13.56MHZ.
Preferably, the thickness of the described film that is all-trans is 100 dusts-1000 dusts.
Accordingly, the present invention also provides a kind of photomask layer, and it comprises:
Substrate is positioned at the rete to be etched on the substrate, is positioned at the film that is all-trans on the rete to be etched, is positioned at the photoresist layer on the film that is all-trans, and the described film that is all-trans is transmission plane towards the surface of photoresist layer, and the described film that is all-trans is reflecting surface towards the surface of rete to be etched.
Preferably, the material of the described film that is all-trans is carbon-silicon compound.
Preferably, the thickness of the described film that is all-trans is 100 dusts～1000 dusts.
Compared with prior art, the present invention mainly has the following advantages:
Utilization of the present invention forms the layer that is all-trans between photoresist layer and rete to be etched, thereby so that when incident ray from the direction incident of the photoresist layer film that is all-trans, can enter the film that is all-trans towards the transmission plane of photoresist layer from the film that is all-trans, when incident ray from the direction incident of the rete to be etched film that is all-trans, the reflecting surface of film towards rete to be etched that then be all-trans is reflected back rete to be etched, so just so that incident ray arrives the interface of PR and the film that is all-trans through PR, be decomposed into reflection ray and refracted ray, after refracted ray sees through the film that is all-trans, by the boundary reflection of substrate and rete to be etched behind the film that is all-trans, and then the reflecting surface of the film that is all-trans reflection, and then by the boundary reflection of substrate and rete to be etched to the film that is all-trans, because the interface is the film that is all-trans, therefore after light can all reflect back into the reflecting surface of the film that is all-trans, and can not enter through PR, therefore do not interfere and produce, standing wave effect can not appear, preferred all-trans film is by CVD or the growth of PVD method, satisfy to the full extent processing procedure to the requirement of planarization, and need not to monitor be all-trans refraction coefficient and the extinction coefficient of film, reduced production cost.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by physical size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the work schematic diagram of existing the first photomask layer;
Fig. 2 is the work schematic diagram of existing the second photomask layer;
Fig. 3 is the work schematic diagram of existing the third photomask layer;
Fig. 4 is the process flow diagram of photomask layer formation method of the present invention;
Fig. 5 is photomask layer structural representation of the present invention;
Fig. 6 is photomask layer work schematic diagram of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public implementation.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 4 is the process flow diagram of photomask layer formation method of the present invention; Fig. 5 is photomask layer structural representation of the present invention; Fig. 7 is photomask layer work schematic diagram of the present invention.Below in conjunction with Fig. 4 to Fig. 6 photomask layer formation method of the present invention is described.
Step S10 provides semiconductor base, and it comprises substrate, and is positioned at the rete to be etched on the substrate.
With reference to figure 5, described semiconductor base can be substrate (part that comprises integrated circuit and other elements), the patterning of multi layer substrate (silicon substrate that for example, has covering dielectric and metal film), classification substrate, silicon-on-insulator substrate (SOI), epitaxial silicon substrate, section processes or the substrate that is not patterned.In the present embodiment, described semiconductor base comprises substrate 100, is positioned at the rete to be etched 110 on the substrate 100, and for example rete to be etched can be monox or silicon nitride material.
Step S20 forms the film 130 that is all-trans at described rete to be etched.
Continuation is with reference to figure 5, in the present embodiment, the film 130 that is all-trans can adopt the method for physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) etc. to form, and the film that for example is all-trans can adopt the carbon-silicon compound material.
Concrete, adopt the method for CVD to form in the present embodiment, for example parameter comprises: chamber pressure is 1Torr～10Torr, radio-frequency voltage power 150W～1000W, frequency 100KHZ～13.56MHZ, reaction raw materials comprises silane and hydrocarbon, and forming thickness is the film that is all-trans of 100 dusts～1000 dusts.
The described film 130 that is all-trans is transmission plane towards the surface of photoresist layer, and in other words, light can enter to inject from the surface towards photoresist layer of the film that is all-trans and pass the film that is all-trans.The surface towards rete to be etched of the described film 130 that is all-trans is reflecting surface, in other words, when light from the direction incident of the rete to be etched film that is all-trans, can not enter and pass the film that is all-trans, and the film that is all-trans returns rete to be etched towards the surface reflection of rete to be etched.
Above-mentioned effect of being all-trans film 130 is to prevent that light from passing through to reflect at the wafer interface behind the photoresist, and the light of avoiding reflecting can interfere with incident light, so that photoresist can uniform exposure.
Step S30 forms photoresist layer at the described film that is all-trans.
Continuation in the present embodiment, can be adopted spin-coating method with reference to figure 5, comprises at first forming photoresist layer on wafer.Can in revolving gluing equipment, finish, for example first wafer is positioned over described revolving in the gluing equipment; Then revolve the gluing equipment initialization, described revolve the initialized design parameter of gluing equipment can for: the wafer rotational time is 1 second～2 seconds, and rotational speed is 1500RPM～2500RPM.Then, to wafer surface photoresist material, for example instil at the center of wafer.Then, the rotation wafer carries out whirl coating, and described whirl coating step design parameter is: rotational time is 3 seconds～9 seconds, and the described gluing equipment rotating speed that revolves is 3500RPM, forms the more uniform photoresist layer 140 of Thickness Ratio of 200 dusts～2000 dusts.Form the structure of photomask layer as shown in Figure 5.
Fig. 6 is photomask layer work schematic diagram of the present invention, below in conjunction with Fig. 6 the principle of work of photomask layer of the present invention is described.
At first, incident ray S10 is incident on the photoresist layer 140 by the opening of mask plate 150, enter photoresist layer 140, be decomposed at the interface reflection ray S20 and transmitted ray S30 at photoresist layer 140 and the film 130 that is all-trans, reflection ray S20 is reflected back toward in the photoresist layer 140, and transmitted ray S30 enters the film 130 that is all-trans from the transmission plane refraction of the film 130 that is all-trans.Then, transmitted ray S30 passes the rete to be etched 110 that the film S130 that is all-trans enters its lower floor, be reflected at the interface on the reflecting surface of the film 130 that is all-trans at rete 110 to be etched and substrate 100, and then the film that is all-trans reflects into rete 110 to be etched, therefore this light disappears after by Multi reflection, do not enter photoresist layer 140 and can not be reflected, do not produce thereby interfere, standing wave effect can not appear, preferably be all-trans film 130 by CVD or the growth of PVD method, satisfy to the full extent processing procedure to the requirement of planarization, and need not to monitor be all-trans refraction coefficient and the extinction coefficient of film, reduced production cost.Because eliminated standing wave effect, also do not interfere to produce, so the present invention has improved exposure effect in the photoetching process greatly.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. the formation method of a photomask layer is characterized in that, comprises step:
Semiconductor base is provided, and it comprises substrate, and is positioned at the rete to be etched on the substrate;
Form the film that is all-trans at described rete to be etched;
Form photoresist layer at the described film that is all-trans, the described film that is all-trans is transmission plane towards the surface of photoresist layer, so that light can be from the direction incident of photoresist layer, and enters and pass the film that is all-trans; The described film that is all-trans is reflecting surface towards the surface of rete to be etched, so that light from the direction incident of rete to be etched, can not enter and pass the film that is all-trans, is reflected back toward rete to be etched.
2. the formation method of photomask layer according to claim 1 is characterized in that, the method that forms the film that is all-trans at described semiconductor base is chemical vapor deposition or physical vapor deposition.
3. the formation method of photomask layer according to claim 1 is characterized in that, the material of the described film that is all-trans is carbon-silicon compound.
4. the formation method of photomask layer according to claim 1 is characterized in that, the reaction raw materials that chemical gas-phase deposition method forms the film that is all-trans comprises silane and hydrocarbon.
5. the formation method of photomask layer according to claim 4 is characterized in that, the parameter that chemical gas-phase deposition method forms the film that is all-trans is: chamber pressure is 1Torr～10Torr, radio-frequency voltage power 150W～1000W, frequency 100KHZ～13.56MHZ.
6. the formation method of photomask layer according to claim 1 is characterized in that, the thickness of the described film that is all-trans is 100 dusts～1000 dusts.
7. a photomask layer is characterized in that, comprising:
Substrate is positioned at the rete to be etched on the substrate; Be positioned at the film that is all-trans on the rete to be etched; Be positioned at the photoresist layer on the film that is all-trans; The described film that is all-trans is transmission plane towards the surface of photoresist layer, so that light can be from the direction incident of photoresist layer, and enters and pass the film that is all-trans; The described film that is all-trans is reflecting surface towards the surface of rete to be etched, so that light from the direction incident of rete to be etched, can not enter and pass the film that is all-trans, is reflected back toward rete to be etched.
8. photomask layer according to claim 7 is characterized in that, the material of the described film that is all-trans is carbon-silicon compound.
9. photomask layer according to claim 7 is characterized in that, the thickness of the described film that is all-trans is 100 dusts～1000 dusts.
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| CN 201010188921 CN102262351B (en) | 2010-05-25 | 2010-05-25 | Photomask layer and its formation method |
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| CN 201010188921 CN102262351B (en) | 2010-05-25 | 2010-05-25 | Photomask layer and its formation method |
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| CN102262351B true CN102262351B (en) | 2013-01-23 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113009776B (en) * | 2019-12-20 | 2023-09-05 | 京东方科技集团股份有限公司 | Mask, mask system and preparation and photoetching methods |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218400A (en) * | 1991-03-07 | 1993-06-08 | Sony Corporation | Developing apparatus of photoresist |
| US6235456B1 (en) * | 1998-12-09 | 2001-05-22 | Advanced Micros Devices, Inc. | Graded anti-reflective barrier films for ultra-fine lithography |
| CN1417626A (en) * | 2001-10-31 | 2003-05-14 | 奥博特瑞克斯株式会社 | Manufacture of conducting/reflecting color LCD and its substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753584B1 (en) * | 1997-08-21 | 2004-06-22 | Micron Technology, Inc. | Antireflective coating layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218400A (en) * | 1991-03-07 | 1993-06-08 | Sony Corporation | Developing apparatus of photoresist |
| US6235456B1 (en) * | 1998-12-09 | 2001-05-22 | Advanced Micros Devices, Inc. | Graded anti-reflective barrier films for ultra-fine lithography |
| CN1417626A (en) * | 2001-10-31 | 2003-05-14 | 奥博特瑞克斯株式会社 | Manufacture of conducting/reflecting color LCD and its substrate |
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Effective date of registration: 20171116 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |
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Effective date of registration: 20180622 Address after: 214135 -6, Linghu Road, Taihu international science and Technology Park, Wuxi, Jiangsu, 180 Patentee after: WUXI DISI MICROELECTRONIC CO., LTD. Address before: 214028 No. 8 Xinzhou Road, national hi tech Industrial Development Zone, Wuxi, Jiangsu Patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. |