CN102262350A - 曝光机的曝光程序的验证方法及其使用的掩模 - Google Patents
曝光机的曝光程序的验证方法及其使用的掩模 Download PDFInfo
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20050068515A1 (en) * | 2003-09-30 | 2005-03-31 | Lothar Bauch | Method for detecting positioning errors of circuit patterns during the transfer by means of a mask into layers of a substrate of a semiconductor wafer |
CN1770419A (zh) * | 2004-11-02 | 2006-05-10 | 力晶半导体股份有限公司 | 用于曝光机器的检测装置及检测方法 |
CN101435998A (zh) * | 2007-11-15 | 2009-05-20 | 上海华虹Nec电子有限公司 | 降低光刻机镜头畸变引起的光刻对准偏差的方法 |
CN101592869A (zh) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | 曝光设备焦距监测方法 |
US20100123886A1 (en) * | 2008-11-18 | 2010-05-20 | Asml Netherlands B.V. | Lithographic Apparatus and Device Manufacturing Method |
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- 2010-05-25 CN CN2010101884020A patent/CN102262350A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050068515A1 (en) * | 2003-09-30 | 2005-03-31 | Lothar Bauch | Method for detecting positioning errors of circuit patterns during the transfer by means of a mask into layers of a substrate of a semiconductor wafer |
CN1770419A (zh) * | 2004-11-02 | 2006-05-10 | 力晶半导体股份有限公司 | 用于曝光机器的检测装置及检测方法 |
CN101435998A (zh) * | 2007-11-15 | 2009-05-20 | 上海华虹Nec电子有限公司 | 降低光刻机镜头畸变引起的光刻对准偏差的方法 |
CN101592869A (zh) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | 曝光设备焦距监测方法 |
US20100123886A1 (en) * | 2008-11-18 | 2010-05-20 | Asml Netherlands B.V. | Lithographic Apparatus and Device Manufacturing Method |
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