CN102259823B - Method for producing MEMS pressure-sensitive sensing element - Google Patents
Method for producing MEMS pressure-sensitive sensing element Download PDFInfo
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- CN102259823B CN102259823B CN201010186557.0A CN201010186557A CN102259823B CN 102259823 B CN102259823 B CN 102259823B CN 201010186557 A CN201010186557 A CN 201010186557A CN 102259823 B CN102259823 B CN 102259823B
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Abstract
The invention discloses a method for producing an MEMS pressure-sensitive sensing element, comprising the following steps: 1) depositing a barrier layer on a silicon chip; 2) etching to form a cavity; 3) depositing a first sacrificial layer; 4) carrying out CMP grinding on the first sacrificial layer; 5) stripping off the barrier layer, then depositing a second sacrificial layer; 6) forming through-holes of a support column; 7) depositing a pressure-sensitive sensing film on the surface of the silicon chip; 8) etching the pressure-sensitive sensing film to the second sacrificial layer; 9) removing the second sacrificial layer with wet process; and 10) depositing a protective layer to seal the cavity. According to the invention, the barrier layer as the barrier layer when carrying out CMP grinding on the first sacrificial layer is deposited before etching the cavity, then the barrier layer is removed, and the second sacrificial layer is deposited again, so that the in-plane heterogeneity brought by the CMP process with single sacrificial layer is eliminated.
Description
Technical field
The present invention relates to a kind of preparation method of MEMS pressure-sensitive sensing element.The invention still further relates to a kind of method that forms cavity in silicon chip.
Background technology
Pressure sensor is a kind of device that pressure is converted to the signal of telecommunication.Conventionally, pressure sensor itself is the micromachined membrane that is embedded with resistance, and pressure drag is used for detected pressures.
Silicon thin film has good mechanicalness, and micromachining technology (MEMS) integrates silicon thin film and pressure drag stressometer or strain gauge.Pressure drag stressometer or strain gauge are injected simply or are diffused in film upper surface.These pressure drags are placed on to position suitable on film, and link together with Wheatstone bridge, like this, these pressure drags just can be exported the enough strong signal of telecommunication.In addition, film also can be used as an electrode of capacitor.The stress of film and amount of deflection all depend on the differential pressure being applied thereto, namely the pressure of the pressure of film upper surface and film lower surface.If the lower surface of film is a part for certain vacuum chamber, Here it is so absolute pressure transducer.
Body micromachined (bulk micromachining) and surface micromachined (surface micromachining) are to manufacture two kinds of main method of film.In body micro-machining, optionally remove the body silicon materials on silicon chip, until leave one deck monocrystalline silicon thin film, mainly control film thickness by etch-stop technology.Surface micro be first by thin-film deposition on sacrifice layer, and then selective wet etching sacrifice layer, finally forms film.
Body micro-machining, by Applied Electrochemistry etch-stop technology, from silicon chip back side mineralization pressure mouth, uses epitaxial layer to form micro mechanical structure.Because body micromachined is used electrochemical etching method, poor to film thickness control, and itself and CMOS processing compatibility are poor.And surface micromachined technology can accurately be controlled film thickness by the deposit of sacrifice layer, use positive processing to meet and manufacture cavity and discharge micro mechanical structure, fine with traditional silicon Surface Machining CMOS processing compatibility.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of preparation method of MEMS voltage sensitive sensor, and it can overcome inhomogenous problem in the face that in manufacturing process, CMP technique is brought.
For solving the problems of the technologies described above, the preparation method of MEMS pressure-sensitive sensing element of the present invention, comprises the steps:
1) deposit one barrier layer on silicon chip;
2) photoetching process defines the position of cavity, and barrier layer and described silicon chip form cavity described in etching;
3) deposit ground floor sacrifice layer, described ground floor sacrifice layer is filled described cavity;
4) adopt CMP technique to grind described ground floor sacrifice layer, stop on described barrier layer;
5) peel off described barrier layer, then deposit second layer sacrifice layer;
6) photoetching process defines the position of support column through hole, and described in etching, second layer sacrifice layer and described silicon chip form support column through hole afterwards;
7) deposit pressure-responsive film on second layer sacrifice layer;
8) photoetching process defines the figure of pressure-responsive film, then described in etching pressure-responsive film to second layer sacrifice layer;
9) wet method is removed described second layer sacrifice layer and described ground floor sacrifice layer;
10) deposit protective layer, to seal described cavity.
The preparation method of MEMS pressure-sensitive sensing element of the present invention, first before cavity etching, at crystal column surface deposit one deck, sacrifice layer there is the barrier layer of the CMP of high selectivity, when making to adopt CMP technique to grind sacrifice layer, can be parked on this barrier layer, afterwards barrier layer is peeled off, then deposit one deck is for the sacrifice layer of etching support column through hole.Because CMP process of lapping can be parked on barrier layer, so can effectively eliminate the CMP technological fluctuation causing because of the variation of consumptive material and technological parameter.Because grinding, CMP is parked on barrier layer simultaneously, the internal homogeneity when internal homogeneity of final sacrificial layer thickness depends primarily on the second layer sacrifice layer deposit after CMP technique, thereby to a certain extent overcome the restriction of CMP technique self-characteristic, improved the thickness homogeneity in silicon chip face and between silicon chip after sacrifice layer CMP grinds.Can provide convenience to the end point determination of the CMP grinding of sacrifice layer in the barrier layer that increases deposit simultaneously, improve the stability of CMP technique.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and the specific embodiment, the present invention is further detailed explanation:
Fig. 1 is the preparation method flow chart of MEMS pressure-sensitive sensing element of the present invention;
Fig. 2 implements the cross section structure schematic diagram after the deposit of ground floor sacrifice layer in flow process of the present invention;
Fig. 3 is for implementing ground floor sacrifice layer CMP cross section structure schematic diagram after treatment in flow process of the present invention;
Fig. 4 implements the cross section structure schematic diagram after the deposit of second layer sacrifice layer in flow process of the present invention;
Fig. 5 implements the cross section structure schematic diagram after pressure-responsive thin-film deposition in flow process of the present invention;
Fig. 6 implements the cross section structure schematic diagram after the removal of second layer sacrifice layer in flow process of the present invention;
Fig. 7 implements the cross section structure schematic diagram after protective layer deposit in flow process of the present invention;
Fig. 8 be in an example of the present invention support column through hole schematic diagram is set.
The specific embodiment
The preparation method of MEMS pressure-sensitive sensing element of the present invention, concrete technology flow process is (seeing Fig. 1):
1) barrier layer 11 on silicon chip 10, as the barrier layer of CMP grinding technics.This barrier material can be SiON or SiN, and in concrete enforcement, barrier material preferably has higher CMP to select the material of ratio to sacrifice layer.Its depositing technics can be PE-CVD, AP-CVD, and LP-CVD etc., the thickness range on barrier layer is 10～10000 dusts.
2) etching forms cavity.Be specially the position that first defines cavity by photoetching process, then etching barrier layer and silicon chip, forms cavity.
3) deposit ground floor sacrifice layer 12 (seeing Fig. 2) on silicon chip.Ground floor sacrifice layer can be silica, pure SiO
2, and other adulterate as P, B, the SiO of the impurity elements such as F
2, its depositing technics can be PE-CVD, AP-CVD, and LP-CVD etc., thickness range can be 100～50000A.
4) CMP (cmp) grinds ground floor sacrifice layer to barrier layer, and is parked on barrier layer and (sees Fig. 3).In CMP grinding technics, milling time can be made as the set time, also can be made as by end point determination control.End point determination control is by the optics in silicon chip surface or CMP technical process, machinery, the variation of temperature, the end-point detection method of element-specific or compound test.
5) peel off barrier layer, afterwards deposit second layer sacrifice layer 13 (seeing Fig. 4).The material of second layer sacrifice layer can be identical with the material of ground floor sacrifice layer, also can select different materials.Peeling off of barrier layer can adopt conventional technique.
6) etching of support column through hole.Be specially the position that elder generation's photoetching on second layer sacrifice layer defines support column through hole, then etching second layer sacrifice layer and part silicon 10, forms support column through hole.Support column through hole 12 is to be arranged in sacrifice layer, and a ring is around the through hole (seeing Fig. 8) of cavity 11.Support column through hole gos deep into the degree of depth of silicon chip and the number of through hole is required to determine by concrete technology, and basic design principle is should guarantee can support the sense film that is positioned at cavity top in sacrifice layer removal process and after removing.In a specific embodiment, support column through hole gos deep into silicon chip approximately 50 to 20000 dusts.
7) deposit pressure-responsive film 14 (seeing Fig. 5) on second layer sacrifice layer.Pressure-responsive film preferably has higher wet etching to select the material of ratio with second layer sacrifice layer.In one instantiation, pressure-responsive film can be polysilicon, pure silicon polycrystal or doping as P, B, the polysilicon of the impurity elements such as F, its depositing technics can be PE-CVD, AP-CVD, LP-CVD etc., thickness range is 100～50000 dusts.
8) pressure-responsive film is graphical.Be specially the figure that photoetching process defines pressure-responsive film, then etching pressure-responsive film, etch-stop is stayed on the second layer sacrifice layer of lower floor.Remaining pressure-responsive film is positioned on cavity and support column through hole.
9) then wet etching is removed second layer sacrifice layer 13 and ground floor sacrifice layer 12, forms the pressure-sensitive sensing element (seeing Fig. 6) being made up of cavity 11, support column and pressure-responsive film 14.
10) last deposit protective layer, above-mentioned pressure-sensitive sensing element sealing (seeing Fig. 7).
Method of the present invention is applicable in all MEMS sensor parts based on silicon substrate simultaneously, need to carry out in the flow process of CMP grinding of sacrifice layer, with after eliminating in original technique sacrifice layer CMP and grinding, the inhomogenous problem of thickness in silicon chip face and between silicon chip, the stability of raising CMP technique.
Claims (4)
1. a preparation method for MEMS pressure-sensitive sensing element, is characterized in that, comprises the steps:
1) deposit one barrier layer on silicon chip;
2) photoetching process defines the position of cavity, and barrier layer and described silicon chip form cavity described in etching;
3) deposit ground floor sacrifice layer, described ground floor sacrifice layer is filled described cavity;
4) adopt CMP technique to grind described ground floor sacrifice layer to described barrier layer;
5) peel off described barrier layer, then deposit second layer sacrifice layer;
6) photoetching process defines the position of support column through hole, and described in etching, second layer sacrifice layer and described silicon chip form support column through hole afterwards;
7) deposit pressure-responsive film on second layer sacrifice layer;
8) photoetching process defines the figure of pressure-responsive film, then described in etching pressure-responsive film to second layer sacrifice layer;
9) wet method is removed described second layer sacrifice layer and described ground floor sacrifice layer;
10) deposit protective layer, to seal described cavity.
2. preparation method as claimed in claim 1, is characterized in that: in described step 1, barrier material is silicon nitride or silicon oxynitride; The material of the ground floor sacrifice layer in described step 3 is silica.
3. preparation method as claimed in claim 1 or 2, is characterized in that: the pressure-responsive film in described step 7 is polysilicon.
4. preparation method as claimed in claim 1 or 2, is characterized in that: in the CMP grinding technics in described step 4, detect behind described barrier layer and stop grinding in process of lapping.
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| CN103063352B (en) * | 2012-12-21 | 2015-11-25 | 上海华虹宏力半导体制造有限公司 | Pressure sensor for micro electro-mechanical system and preparation method thereof, MEMS (micro electro mechanical system) |
| CN104697681B (en) * | 2015-03-10 | 2017-03-08 | 东南大学 | A kind of piezoresistive pressure sensor with self-test device and preparation method thereof |
| KR102088584B1 (en) * | 2018-11-28 | 2020-03-12 | 한국과학기술원 | MEMS membrane structure and method for fabricating thereof |
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| JP2003053700A (en) * | 2001-08-17 | 2003-02-26 | Fuji Xerox Co Ltd | Anisotropic etching method for silicon crystal, method of manufacturing ink channel plate, ink channel plate, ink-jet print head, and ink jet printer |
| CN1432801A (en) * | 2003-02-28 | 2003-07-30 | 北京大学 | NEMS piezoresistive pressure sensor chip and its making process |
| CN1900669A (en) * | 2005-07-21 | 2007-01-24 | 中国科学院微电子研究所 | Method for producing heat shear stress sensor device based on new sacrifice layer process |
| CN1979772A (en) * | 2005-12-02 | 2007-06-13 | 中国科学院微电子研究所 | Method for making release sacrifice layer adopting basing on projection point of silicon lining |
| CN101114591A (en) * | 2006-07-25 | 2008-01-30 | 杭州科岛微电子有限公司 | Pressure capacitance type sensor substrate cavity-forming method |
| CN101450786A (en) * | 2007-12-07 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Pressure sensor for micro electro-mechanical system and production method thereof |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003053700A (en) * | 2001-08-17 | 2003-02-26 | Fuji Xerox Co Ltd | Anisotropic etching method for silicon crystal, method of manufacturing ink channel plate, ink channel plate, ink-jet print head, and ink jet printer |
| CN1432801A (en) * | 2003-02-28 | 2003-07-30 | 北京大学 | NEMS piezoresistive pressure sensor chip and its making process |
| CN1900669A (en) * | 2005-07-21 | 2007-01-24 | 中国科学院微电子研究所 | Method for producing heat shear stress sensor device based on new sacrifice layer process |
| CN1979772A (en) * | 2005-12-02 | 2007-06-13 | 中国科学院微电子研究所 | Method for making release sacrifice layer adopting basing on projection point of silicon lining |
| CN101114591A (en) * | 2006-07-25 | 2008-01-30 | 杭州科岛微电子有限公司 | Pressure capacitance type sensor substrate cavity-forming method |
| CN101450786A (en) * | 2007-12-07 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Pressure sensor for micro electro-mechanical system and production method thereof |
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