CN102257883A - 用于以提高的效率生成euv辐射或软x射线的方法和装置 - Google Patents
用于以提高的效率生成euv辐射或软x射线的方法和装置 Download PDFInfo
- Publication number
- CN102257883A CN102257883A CN2009801506713A CN200980150671A CN102257883A CN 102257883 A CN102257883 A CN 102257883A CN 2009801506713 A CN2009801506713 A CN 2009801506713A CN 200980150671 A CN200980150671 A CN 200980150671A CN 102257883 A CN102257883 A CN 102257883A
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- China
- Prior art keywords
- discharge
- energy beam
- radiation
- apply
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2045—Exposure; Apparatus therefor using originals with apertures, e.g. stencil exposure masks
- G03F7/2047—Exposure with radiation other than visible light or UV light, e.g. shadow printing, proximity printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08171838.9 | 2008-12-16 | ||
EP08171838 | 2008-12-16 | ||
PCT/IB2009/055598 WO2010070540A1 (en) | 2008-12-16 | 2009-12-09 | Method and device for generating euv radiation or soft x-rays with enhanced efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102257883A true CN102257883A (zh) | 2011-11-23 |
CN102257883B CN102257883B (zh) | 2014-06-25 |
Family
ID=41716473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980150671.3A Active CN102257883B (zh) | 2008-12-16 | 2009-12-09 | 用于以提高的效率生成euv辐射或软x射线的方法和装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8253123B2 (zh) |
EP (1) | EP2380411B1 (zh) |
JP (1) | JP5608173B2 (zh) |
KR (1) | KR101622272B1 (zh) |
CN (1) | CN102257883B (zh) |
TW (1) | TWI472266B (zh) |
WO (1) | WO2010070540A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101459998B1 (ko) * | 2007-09-07 | 2014-11-10 | 코닌클리케 필립스 엔.브이. | 높은 전력 동작을 위해 휠 커버를 포함하는 가스 방전 소스들을 위한 회전 휠 전극 디바이스 |
JP5599992B2 (ja) * | 2009-09-03 | 2014-10-01 | ギガフォトン株式会社 | イオン化レーザ装置および極端紫外光光源装置 |
DE102010047419B4 (de) * | 2010-10-01 | 2013-09-05 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur Erzeugung von EUV-Strahlung aus einem Gasentladungsplasma |
EP2555598A1 (en) * | 2011-08-05 | 2013-02-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for generating optical radiation by means of electrically operated pulsed discharges |
JP6477179B2 (ja) * | 2015-04-07 | 2019-03-06 | ウシオ電機株式会社 | 放電電極及び極端紫外光光源装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
FR2814599B1 (fr) | 2000-09-27 | 2005-05-20 | Commissariat Energie Atomique | Dispositif laser de forte puissance crete et application a la generation de lumiere dans l'extreme ultra violet |
US7928416B2 (en) | 2006-12-22 | 2011-04-19 | Cymer, Inc. | Laser produced plasma EUV light source |
US6973164B2 (en) | 2003-06-26 | 2005-12-06 | University Of Central Florida Research Foundation, Inc. | Laser-produced plasma EUV light source with pre-pulse enhancement |
DE10342239B4 (de) | 2003-09-11 | 2018-06-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung |
DE102004005242B4 (de) | 2004-01-30 | 2006-04-20 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur plasmabasierten Erzeugung intensiver kurzwelliger Strahlung |
US7087914B2 (en) | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
WO2005089131A2 (en) | 2004-03-17 | 2005-09-29 | Cymer, Inc. | Lpp euv light source |
DE102005014433B3 (de) | 2005-03-24 | 2006-10-05 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur effizienten Erzeugung von kurzwelliger Strahlung auf Basis eines lasererzeugten Plasmas |
US8536549B2 (en) | 2006-04-12 | 2013-09-17 | The Regents Of The University Of California | Light source employing laser-produced plasma |
KR101396158B1 (ko) | 2006-05-16 | 2014-05-19 | 코닌클리케 필립스 엔.브이. | Euv 램프 및 연질 x-선 램프의 전환 효율을 증가시키는 방법, 및 euv 방사선 및 연질 x-선을 생성하는 장치 |
US7897948B2 (en) * | 2006-09-06 | 2011-03-01 | Koninklijke Philips Electronics N.V. | EUV plasma discharge lamp with conveyor belt electrodes |
US7518135B2 (en) | 2006-12-20 | 2009-04-14 | Asml Netherlands B.V. | Reducing fast ions in a plasma radiation source |
JP2008270149A (ja) * | 2007-03-28 | 2008-11-06 | Tokyo Institute Of Technology | 極端紫外光光源装置および極端紫外光発生方法 |
EP1976344B1 (en) * | 2007-03-28 | 2011-04-20 | Tokyo Institute Of Technology | Extreme ultraviolet light source device and extreme ultraviolet radiation generating method |
JP5001055B2 (ja) * | 2007-04-20 | 2012-08-15 | 株式会社小松製作所 | 極端紫外光源装置 |
CN101796893B (zh) * | 2007-09-07 | 2013-02-06 | 皇家飞利浦电子股份有限公司 | 用于气体放电源的电极设备以及操作具有电极设备的气体放电源的方法 |
JP2009087807A (ja) * | 2007-10-01 | 2009-04-23 | Tokyo Institute Of Technology | 極端紫外光発生方法及び極端紫外光光源装置 |
JP5588439B2 (ja) * | 2008-07-28 | 2014-09-10 | コーニンクレッカ フィリップス エヌ ヴェ | Euv放射又は軟x線を生成する方法及び装置 |
JP4623192B2 (ja) * | 2008-09-29 | 2011-02-02 | ウシオ電機株式会社 | 極端紫外光光源装置および極端紫外光発生方法 |
-
2009
- 2009-12-09 US US13/139,601 patent/US8253123B2/en active Active
- 2009-12-09 EP EP09775314.9A patent/EP2380411B1/en active Active
- 2009-12-09 WO PCT/IB2009/055598 patent/WO2010070540A1/en active Application Filing
- 2009-12-09 CN CN200980150671.3A patent/CN102257883B/zh active Active
- 2009-12-09 JP JP2011540307A patent/JP5608173B2/ja active Active
- 2009-12-09 KR KR1020117016569A patent/KR101622272B1/ko active IP Right Grant
- 2009-12-14 TW TW98142773A patent/TWI472266B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2010070540A1 (en) | 2010-06-24 |
KR101622272B1 (ko) | 2016-05-18 |
JP5608173B2 (ja) | 2014-10-15 |
JP2012512503A (ja) | 2012-05-31 |
KR20110096585A (ko) | 2011-08-30 |
TWI472266B (zh) | 2015-02-01 |
US20110248192A1 (en) | 2011-10-13 |
US8253123B2 (en) | 2012-08-28 |
CN102257883B (zh) | 2014-06-25 |
EP2380411B1 (en) | 2015-04-15 |
TW201031275A (en) | 2010-08-16 |
EP2380411A1 (en) | 2011-10-26 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: USHIO DENKI KABUSHIKI KAISHA Free format text: FORMER OWNER: XTREME TECHNOLOGIES GMBH Effective date: 20141102 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: KONINKLIKE PHILIPS ELECTRONICS N. V. Free format text: FORMER NAME: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Holland Ian Deho Finn Patentee after: KONINKLIJKE PHILIPS N.V. Patentee after: ALKXTERRIM SCIENCE AND TECHNOLOGY LLC Address before: Holland Ian Deho Finn Patentee before: Koninklijke Philips Electronics N.V. Patentee before: Alkxterrim Science And Technology LLC |
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TR01 | Transfer of patent right |
Effective date of registration: 20141102 Address after: Holland Ian Deho Finn Patentee after: KONINKLIJKE PHILIPS N.V. Patentee after: USHIO DENKI Kabushiki Kaisha Address before: Holland Ian Deho Finn Patentee before: KONINKLIJKE PHILIPS N.V. Patentee before: Alkxterrim Science And Technology LLC |
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TR01 | Transfer of patent right |
Effective date of registration: 20190805 Address after: Tokyo, Japan Patentee after: USHIO DENKI Kabushiki Kaisha Address before: Holland Ian Deho Finn Co-patentee before: Ushio Denki Kabushiki Kaisha Patentee before: KONINKLIJKE PHILIPS N.V. |
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TR01 | Transfer of patent right |