CN102254949B - 绝缘体上硅mos晶体管结构 - Google Patents
绝缘体上硅mos晶体管结构 Download PDFInfo
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- CN102254949B CN102254949B CN201110218147.4A CN201110218147A CN102254949B CN 102254949 B CN102254949 B CN 102254949B CN 201110218147 A CN201110218147 A CN 201110218147A CN 102254949 B CN102254949 B CN 102254949B
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- Prior art keywords
- silicon
- channel isolation
- shallow channel
- isolation area
- mos transistor
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- 239000012212 insulator Substances 0.000 title claims abstract description 42
- 238000002955 isolation Methods 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
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- Element Separation (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110218147.4A CN102254949B (zh) | 2011-08-01 | 2011-08-01 | 绝缘体上硅mos晶体管结构 |
Applications Claiming Priority (1)
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CN201110218147.4A CN102254949B (zh) | 2011-08-01 | 2011-08-01 | 绝缘体上硅mos晶体管结构 |
Publications (2)
Publication Number | Publication Date |
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CN102254949A CN102254949A (zh) | 2011-11-23 |
CN102254949B true CN102254949B (zh) | 2016-06-29 |
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Family Applications (1)
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CN201110218147.4A Active CN102254949B (zh) | 2011-08-01 | 2011-08-01 | 绝缘体上硅mos晶体管结构 |
Country Status (1)
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CN (1) | CN102254949B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102437179B (zh) * | 2011-12-07 | 2014-03-26 | 中国科学院上海微系统与信息技术研究所 | 一种抗总剂量辐射加固深亚微米器件的版图结构 |
CN112054061B (zh) * | 2020-08-25 | 2024-04-05 | 中国科学院微电子研究所 | 一种部分耗尽绝缘体上硅的体接触结构及其制作方法 |
CN116072703B (zh) * | 2023-01-28 | 2023-06-13 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6599813B2 (en) * | 2001-06-29 | 2003-07-29 | International Business Machines Corporation | Method of forming shallow trench isolation for thin silicon-on-insulator substrates |
US7666721B2 (en) * | 2006-03-15 | 2010-02-23 | International Business Machines Corporation | SOI substrates and SOI devices, and methods for forming the same |
US7732287B2 (en) * | 2006-05-02 | 2010-06-08 | Honeywell International Inc. | Method of forming a body-tie |
US8293616B2 (en) * | 2009-02-24 | 2012-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabrication of semiconductor devices with low capacitance |
US8492838B2 (en) * | 2009-11-16 | 2013-07-23 | International Business Machines Corporation | Isolation structures for SOI devices with ultrathin SOI and ultrathin box |
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- 2011-08-01 CN CN201110218147.4A patent/CN102254949B/zh active Active
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Publication number | Publication date |
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CN102254949A (zh) | 2011-11-23 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140430 |
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C10 | Entry into substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140430 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Grace Semiconductor Manufacturing Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |