CN102254920A - Avalanche photoelectric diode detection array preparation method - Google Patents
Avalanche photoelectric diode detection array preparation method Download PDFInfo
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- CN102254920A CN102254920A CN2011100865794A CN201110086579A CN102254920A CN 102254920 A CN102254920 A CN 102254920A CN 2011100865794 A CN2011100865794 A CN 2011100865794A CN 201110086579 A CN201110086579 A CN 201110086579A CN 102254920 A CN102254920 A CN 102254920A
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Abstract
The invention belongs to photoelectric detection, and particularly relates to an avalanche photoelectric diode detection array preparation method, which can be applied in the fields of plotting and active imaging such as three-dimensional laser imaging and the like. An avalanche photoelectric diode array prepared by the method mainly comprises a micro lens array, multimode fibers and avalanche photoelectric diode point detectors. By the technology, a plurality of independently run avalanche photoelectric diode point detectors are reintegrated into an array detector to maintain the detection performance of high sensitivity of the avalanche photoelectric diode point detectors, overcome the shortcomings of crosstalk among each pixels of the avalanche photoelectric diode array on a single substrate and operating point unevenness and realize the small/medium-sized avalanche photoelectric diode array outputting detection signals in parallel. The avalanche photoelectric diode array adopts the micro lens array as a detection plane and can flexibly realize the distribution of each pixel by changing the distribution of lens pixels of the micro lens array. The technology is suitable for realizing the small and medium-sized avalanche photoelectric diode arrays with high flexibility.
Description
Technical field
The invention belongs to the photodetection class, be specifically related to a kind of avalanche photodide detection array preparation method, can be applied to Active Imaging and survey fields such as laser three-dimensional imaging.
Background technology
Laser Active Imaging and mapping are to utilize emission laser signal irradiation object under test, collect the light signal of reflected back then, thereby obtain the data such as two-dimensional image, distance, spectral information of object under test.This technology has important application prospects at the space flight and aviation survey field, and in recent years, developed countries such as the U.S. had formulated the research plan of laser Active Imaging and mapping system successively.
At present, in the imaging detection device, charge-coupled device (CCD) is to use the widest a kind of.CCD image device commonly used has two kinds on line style and face type, and CCD adopts the mode of serial data reading, promptly by sequencing control, reads the information of each pixel one by one.Serial data reads mode makes the temporal information of the light signal that each pixel can obtain be subject to the serial reading rate, the temporal resolution of normal CCD is the microsecond magnitude, this just makes CCD can't provide time of advent of light signal accurately, also promptly can't obtain the accurate distance of object under test.So the CCD device generally is used for passive imaging system.Along with the development of imaging technique, the MOS detection array has appearred in succession, and photodiode array, it all is to adopt serial mode that the signal of these devices reads, so can't provide precise time information equally.
More than these ripe image devices all be not suitable for laser Active Imaging and mapping system, key is the temporal resolution of detection array, its restraining factors mainly contain two aspects: (1) is the detector response time of each pixel own; (2) the pixel signal reads mode.The pixel of CCD and MOS detection array all needs certain time of integration, and adopts serial to read mode, so temporal resolution is low, can't satisfy the requirement of precision distance measurement.In the photodiode array, each pixel is a photodiode, and its time resolution can be better than nanosecond order, but its serial read mode and again temporal resolution be limited in the microsecond magnitude, can't satisfy the requirement of precision distance measurement equally.This shows that except the detector of forming pixel must have higher temporal resolution, detection array must adopt to walk abreast and read mode, the complete information that just can obtain each pixel comprises temporal information.The light signal that application need measurements such as laser Active Imaging reflect, because the restriction of laser power, thus very faint of reflected light signal, so adopt avalanche photodide usually with highly sensitive detectivity.At present, for example 8 * 8 silicon-avalanche photodide array has been arranged in the world on a small scale, these arrays adopt detectable signal and line output, can satisfy the requirement of laser Active Imaging.But, because the characteristics of avalanche photodide, the discreteness of device preparation is very big, unanimity can't be accomplished in the working point of the avalanche photodide of each pixel on array, influenced whole detection performance, and the influence of signal cross-talk can appear in the avalanche photodide between the contiguous pixel.Because these particularity of avalanche photodide, so the avalanche photodide of peak performance all is a point probe, its performance index can be supported the Geiger pattern, can survey the atomic low light level signal of single photon.Therefore, how to keep the supersensitive detection performance of avalanche photodide point probe, the avalanche photodide array of preparing middle and small scale is a technical barrier that needs to be resolved hurrily.
Summary of the invention
The objective of the invention is at above-mentioned the deficiencies in the prior art, a kind of avalanche photodide detection array preparation method is provided, this method has promptly kept the supersensitive detection performance of avalanche photodide point probe, prepare the avalanche photodide array (parallel data output) of middle and small scale again, satisfy the requirement to the highly sensitive array detection of faint optical signal such as laser Active Imaging and mapping, can keep the characteristics (being better than nanosecond order) of avalanche photodide high time resolution simultaneously.
The realization of the object of the invention is finished by following technical scheme:
A kind of avalanche photodide detection array preparation method, it is characterized in that described method provides a kind of microlens array according to the pixel distribution mode of described detection array and in the corresponding mode that matches, as detection plane, the directional light or the approximate directional light that incide described microlens array plane are focused into some hot spots, described some hot spots are identical array and arrange, described hot spot is coupled in the multimode fiber, and incide in the avalanche photodide with the coupling of described multimode fiber by multimode fiber, the quantity of wherein said hot spot, the quantity of described multimode fiber and the quantity of described avalanche photodide are corresponding one by one respectively, the light signal that is each avalanche photodide detection is corresponding to pixel on the described microlens array plane, incide the light signal on the microlens array plane, every Shu Guang has the avalanche photodide of corresponding multimode fiber coupling to survey.
Described microlens array pixel is distributed as m * m ', N=m * m ', and m, m ' they are the pixel number, N is an avalanche photodide quantity, wherein m or m '=1 ~ 40.
Described avalanche photodide is a point probe, and each avalanche photodide has independent signal output.
What the signal output of avalanche photodide was adopted is parallel mode, N road output signal is promptly arranged, the maintenance that every road signal is all complete the output signal feature of each avalanche photodide, comprise inciding the light intensity on each pixel and arriving the temporal information of the light of each pixel of detecting.
Advantage of the present invention is to utilize existing optics integrated technology, comprises microlens array and fiber coupling technique, and the avalanche photodide point probe of a plurality of independent operatings is integrated again, becomes detector array.The present invention has kept the high-sensitive detection performance of avalanche photodide point probe, avoided crosstalking mutually between each pixel of avalanche photodide array on the single substrate, and the uneven defective in working point, realize the avalanche photodide array of the middle and small scale of detectable signal and line output, this avalanche photodide array adopts microlens array as detection plane, the distribution of the lens pixel by changing microlens array can realize the avalanche photodide array that various pixels distribute flexibly.This technology very is fit to realize the avalanche photodide array of high-sensitive middle and small scale.
Description of drawings
The system configuration schematic diagram of Fig. 1 embodiment of the invention;
The microlens array pixel distribution map of Fig. 2 embodiment of the invention;
Fig. 3 is the single pixel detecting light signal of a present invention principle schematic.
Embodiment
Feature of the present invention and other correlated characteristics are described in further detail by embodiment below in conjunction with accompanying drawing, so that colleague technical staff's understanding:
The avalanche photodide detection array for preparing the middle and small scale that the individual pixel of a kind of novel m * m ' distributes, wherein m and m ' are the pixel numbers of plane bidimensional, N=m * m ' (m, m '=1-40), this novel avalanche photodide array is made up of two parts:
M * m ' microlens array, its pixel is distributed as m * m ', the directional light (comprising approximate directional light) that incides the microlens array plane can be focused into N hot spot, and hot spot is m * m ' and distributes, and is coupled in the N root multimode fiber;
The avalanche photodide of N multimode fiber coupling, wherein avalanche photodide is a point probe, each avalanche photodide has independent signal output.
When directional light (comprising approximate directional light) incides 1) on the microlens array plane of described multimode fiber coupling, be focused into N hot spot, and be coupled in the N root multimode fiber, incide 2 by multimode fiber) in the avalanche photodide of described N multimode fiber coupling.By this device, the light signal that incides on m * m ' microlens array plane is divided into N bundle light, and every Shu Guang has the avalanche photodide of corresponding multimode fiber coupling to survey.The photosignal of the output of each avalanche photodide not only is incorporated into the light intensity that is mapped on each pixel, simultaneously owing to be and line output, so every road output signal has comprised the temporal information of the light signal that arrives each pixel, time precision is the precision of avalanche photodide, is better than nanosecond order.
As Figure 1-3, label 1-4 represents respectively: microlens array 1, multimode fiber 2, avalanche photodide 3, lenticule 4.N is the quantity of avalanche photodide.
As shown in Figure 1, suppose N=100, m=m '=10.The flashlight of echo reflection, parallel microlens array 1 plane of inciding, distribution according to microlens array 1, the directional light that incides microlens array 1 plane is pooled 100 hot spots, incident light is divided into 100 bundle light signals, be coupled to 100 avalanche photodides 3 by multimode fiber 2, carry out photodetection.Wherein, microlens array 1 is 10 * 10 to amount to 100 lens 4 as shown in Figure 2, lens 4 diameter 1.45mm, and two adjacent lens 4 centre distance 1.5mm, lens 4 focal lengths are 5mm, microlens array 1 is of a size of 15 * 15mm
2For each lens 4, in directional light incided lens 4 diameter ranges, as shown in Figure 3, incident light is converged was coupled into multimode fiber 2, can adopt 105/125 micron multimode fiber, and its core diameter is 105 microns, and cladding diameter is 125 microns.Through multimode fiber 2 conduction, incide the photosurface of avalanche photodide 3 at last, carry out photodetection.Each avalanche photodide 3 has independently output, pixel on the corresponding microlens array of light signal 1 plane that each avalanche photodide 3 is surveyed, 100 avalanche photodides 3 have 100 outputs, corresponding 100 pixels, this parallel way of output can keep the photoelectric output signal of each avalanche photodide 3 completely, comprises time and amplitude.Suppose " Reach-Through " type silicon-avalanche photodide C30902 of the Canadian Perkinelmer of employing company, its time jitter 300ps, the certainty of measurement that corresponds to laser ranging and three-dimensional Active Imaging is 45mm.This avalanche photodide array can be operated under three kinds of patterns:
(1) linear model, the reverse bias voltage that is carried on the avalanche photodide is lower than avalanche point, avalanche gain generally＜100, this mode of operation at be the situation of the flashlight relatively strong (every pulse 〉=hundreds of photon) of the object reflected back of surveying, what export is the analog electrical pulse, and the single cycle can be finished measurement;
(2) Geiger mode angular position digitizer, the reverse bias voltage that is carried on the avalanche photodide is higher than avalanche point 10-30V, can measure discrete photon signal, output be count pulse, this mode of operation pin be situation to the flashlight of detection object reflected back very faint (several photon);
(3) inferior Geiger mode angular position digitizer, be carried in reverse bias voltage on the avalanche photodide a little less than avalanche point, avalanche gain is between 1000-100000, in the time of corresponding to incident light subnumber fewer (tens photons), what export is an analog pulse, and amplitude is approximate to be directly proportional with the incident light subnumber.
According to concrete system situation (Measuring Time, echo optical signal intensity), can select corresponding avalanche photodide operating circuit, become the highly sensitive avalanche photodide detection array of 100 pixels and line output.Be equipped with parallel high-speed data collection and signal processing module, laser system, Laser emission and gathering system just can be formed initiatively 3-D imaging system of a laser.
Claims (4)
1. avalanche photodide detection array preparation method, it is characterized in that described method provides a kind of microlens array according to the pixel distribution mode of described detection array and in the corresponding mode that matches, as detection plane, the directional light or the approximate directional light that incide described microlens array plane are focused into some hot spots, described some hot spots are identical array and arrange, described hot spot is coupled in the multimode fiber, and incide in the avalanche photodide with the coupling of described multimode fiber by multimode fiber, the quantity of wherein said hot spot, the quantity of described multimode fiber and the quantity of described avalanche photodide are corresponding one by one respectively, the light signal that is each avalanche photodide detection is corresponding to pixel on the described microlens array plane, incide the light signal on the microlens array plane, every Shu Guang has the avalanche photodide of corresponding multimode fiber coupling to survey.
2. a kind of avalanche photodide detection array preparation method according to claim 1 is characterized in that described microlens array pixel is distributed as m * m ', N=m * m ', m, m ' is the pixel number, and N is an avalanche photodide quantity, wherein m or m '=1 ~ 40.
3. a kind of avalanche photodide detection array preparation method according to claim 1 is characterized in that described avalanche photodide is a point probe, and each avalanche photodide has independent signal output.
4. a kind of avalanche photodide detection array preparation method according to claim 2, what it is characterized in that the signal output of avalanche photodide adopts is parallel mode, N road output signal is promptly arranged, the maintenance that every road signal is all complete the output signal feature of each avalanche photodide, comprise inciding the light intensity on each pixel and arriving the temporal information of the light of each pixel of detecting.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783431A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第四十四研究所 | Manufacturing method of APD array device |
Citations (3)
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| US20020126361A1 (en) * | 2000-11-28 | 2002-09-12 | Victor Vilnrotter | Adaptive detector arrays for optical communications receivers |
| US6975784B1 (en) * | 2004-09-10 | 2005-12-13 | Intel Corporation | Singulated dies in a parallel optics module |
| CN101210969A (en) * | 2006-12-31 | 2008-07-02 | 中国科学院西安光学精密机械研究所 | Staring type high-resolution three-dimensional imaging detector |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020126361A1 (en) * | 2000-11-28 | 2002-09-12 | Victor Vilnrotter | Adaptive detector arrays for optical communications receivers |
| US6975784B1 (en) * | 2004-09-10 | 2005-12-13 | Intel Corporation | Singulated dies in a parallel optics module |
| CN101210969A (en) * | 2006-12-31 | 2008-07-02 | 中国科学院西安光学精密机械研究所 | Staring type high-resolution three-dimensional imaging detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110783431A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第四十四研究所 | Manufacturing method of APD array device |
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Application publication date: 20111123 |