CN102253603B - Alignment detection device for photoetching equipment - Google Patents
Alignment detection device for photoetching equipment Download PDFInfo
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- CN102253603B CN102253603B CN 201010181612 CN201010181612A CN102253603B CN 102253603 B CN102253603 B CN 102253603B CN 201010181612 CN201010181612 CN 201010181612 CN 201010181612 A CN201010181612 A CN 201010181612A CN 102253603 B CN102253603 B CN 102253603B
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Abstract
The invention relates to an alignment detection device for photoetching equipment. The device comprises a wafer stage reference board, the lower surface of which is provided with a transmission type mark for mask alignment; a photon conversion crystal, the center of which is aligned with the center of the corresponding transmission type mark, for converting ultraviolet light into visible light; an optical support for installing the photon conversion crystal; an isolation board for isolating light propagation and an external heat source; an optical filter installed on the isolation board for filtering useless light beyond the visible light band; and a fiber directly connected to the optical filter.
Description
Technical field
The present invention relates to field of lithography, relate in particular to the alignment detection device for lithographic equipment.
Background technology
In commercial plant, due to the needs of high precision and high production capacity, measuring system and the control system of distributing a large amount of precise light electrical measurements, the sampling of high speed live signal, data acquisition, exchanges data and communications etc.These systems need us to adopt various ways to realize that sensor signal controlling of sampling, data acquisition control, exchanges data control the control of communicating by letter with data transmission etc.Have the device of this measurement and demand for control to comprise: integrated circuit is made lithographic equipment, liquid crystal panel lithographic equipment, MEMS/MOEMS lithographic equipment, Advanced Packaging lithographic equipment, printed circuit board (PCB) lithographic equipment, printed circuit board (PCB) processing unit (plant) and printing circuit board element mounting device etc.
in lithographic equipment, use the alignment mark combination to carry out alignment scanning by the alignment system in lithographic equipment and obtain the alignment information such as the optical information of each alignment mark branch and positional information, these information are carried out respective handling, obtain the position relationship between the alignment mark combination on mask alignment mark combination and work stage datum plate, the alignment system of aiming at this lithographic equipment comprises: radiation-generating machine, mask graph illumination window and control panel thereof, mask and mask alignment mark combination thereof, mask platform, the mask platform position sensor, optical projection system, work stage and the combination of datum plate alignment mark thereof, work stage position sensor and radiation detection sensor, wherein mask graph comprises exposure mask pattern and alignment mask figure, mask graph illumination window and control panel thereof be used to form window with radiation transmission to the alignment mask figure, optical projection system is used for radiation irradiation is formed transmission picture or reflection image to the alignment mask figure, and this transmission picture or reflection image are throwed by optical projection system and formed aerial image, with this aerial image of detection of workpiece stage fiducial plate alignment mark below, radiation sensor is the emittance after through the transmission of work stage alignment patterns for detection of aerial image, mask platform position sensor and work stage position sensor are surveyed respectively mask platform in the alignment scanning process and the locus of work stage.
Because the sniffer of lithographic equipment is the comprehensive ultrahigh precision sniffer of positional information and optical information, therefore the material that uses there be optics and the Photothermal characterisation In of strict requirement, particularly material.Simultaneously, manufacturing accuracy and the manufacture difficulty of this sniffer there is specific (special) requirements, need to not reducing assembly precision and long-term the use under the stable prerequisite of detection accuracy, reduces manufacture difficulty and cost.Figure 1 shows that the structural representation of sniffer of the alignment system of prior art lithographic equipment used.In figure, 20 is alignment detection device; 21 is the wafer station datum plate, and 21 contain reflection-type mark and transmission-type mark for upper surface; 22 is optical bracket; 23 are photon conversion crystal; 24 is the optically filtering sheet; 25 is photodetector; 26 is division board; 27 is dowel; 28 is the photodetector support; 29 is the pre-amplification plate; Wafer station datum plate 21 lower surfaces have a datum plate blind hole (not indicating in figure).Photon conversion crystal 23 and optically filtering sheet 24 are installed in the through hole of optical bracket 22, and optical bracket 22 is installed in the datum plate blind hole.Photodetector 25 is installed in division board 26 through holes, and photodetector 25 is connected with filter plate, and dowel 27 is fixing with optical bracket 22, division board 26 and photodetector support 28, and pre-amplification plate 29 is connected with photodetector support 28.The sniffer of Holland ASML company is exactly this structure that adopts.The datum plate blind hole bottom surface of prior art to wafer station datum plate upper surface distance is no more than 1mm, 0.5mm for example, datum plate blind hole bottom surface is thicker to wafer station datum plate upper surface distance, cause crosstalk between the transmission optics signal of each branch of transmission-type mark more serious, existing process technology difficult point is this datum plate blind hole of processing and manufacturing, quartz plate blind hole processing and manufacturing difficulty wherein, blind hole and photon conversion crystal are difficult to assembling, crosstalk between the transmission optics signal of each branch's generation of mark.
Summary of the invention
The object of the present invention is to provide a kind of lithographic equipment sniffer, it can avoid crosstalking between each optical signalling, improves assembly precision and property easy to assembly, and improves processibility, thereby improves performance and the efficient of lithographic equipment.
The invention provides a kind of alignment detection device for lithographic equipment, comprising:
The wafer station datum plate has the transmission-type mark that at least one is used for mask registration, and described mark is formed on the lower surface of wafer station datum plate;
Photon conversion crystal is used for ultraviolet light is converted to visible light, and its quantity is identical with the quantity of transmission-type mark, the center of each photon conversion crystal and the center-aligned of corresponding transmission-type mark;
Optical bracket has the hole for the through hole that photon conversion crystal is installed and location dowel on it, the quantity of through hole is identical with the quantity of photon conversion crystal;
Division board is used for the unit light that sees through optical bracket is propagated isolation, have on it with optical bracket on the through hole of number of openings equal number;
The optically filtering sheet is used for the outer nothing of filtering visible light wave range and uses up, and each is installed in respectively in respective through hole on division board;
Optical fiber, each directly is connected with corresponding optically filtering sheet.
Wherein, the end face that is connected with the optically filtering sheet of each optical fiber comprises the lens for focal beam spot.
Wherein, the upper surface of wafer station datum plate has the reflection-type mark, is used for wafer station and aims at.
Wherein, the wafer station datum plate is the quartz plate with the chromium layer, and the chromium layer is plated on the lower surface of quartz plate, and the transmission-type mark is formed on the chromium layer, and the reflection-type mark is formed on the upper surface of quartz plate.
Wherein, the transmission-type mark is the amplitude grating mark with multiple-branching construction, and the reflection-type mark is the phase grating mark.
Wherein, photon conversion crystal is scintillation crystal.
Wherein, the protection of the marked region plating reflection horizon of wafer station datum plate, the zone that transmission-type mark top is corresponding and other regional all plating reflection horizon not.
Wherein, described optical fiber is the multimode optical fiber greater than the spot diameter that is incident to fiber end face.
Wherein, the diameter of optically filtering sheet is greater than the diameter of photon conversion crystal.
Wherein, division board is connected with optical bracket by the location dowel, is used for installing the hole of locating dowel on optical bracket and has two at least, and quantity is identical with the quantity of location dowel.
Wherein, division board is made by high thermal insulation ceramics material, can isolate extraneous thermal source.
The present invention is by directly being connected the transmission-type mark of the multiple-branching construction of wafer station datum plate lower surface and using the fiber-optic probe structure with photon conversion crystal at the lithographic equipment alignment detection device, this device has prevented from crosstalking between the optical signal transmissive of each branch of transmission-type mark, has improved alignment precision;
This device has been avoided the manufacture difficulty of prior art processing blind hole on the wafer station datum plate, has reduced photon conversion plane of crystal and wafer station datum plate assembly difficulty, has improved processibility and property easy to assembly, does not reduce assembly precision simultaneously;
In the present invention, the upper surface of wafer station datum plate contains the reflection-type mark that is useful on the wafer station aligning, and lower surface contains the transmission-type mark that is useful on mask registration, has the wafer station datum plate of this feature, can be used for simultaneously wafer station and aim at and mask registration.
Description of drawings
Figure 1 shows that the structural representation of the alignment detection device that is used for lithographic equipment of prior art;
Figure 2 shows that according to the alignment device for lithographic equipment of the present invention and the total arrangement between lithographic equipment, principle of work structural representation;
Figure 3 shows that the structural representation according to the alignment detection device for lithographic equipment of the present invention.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention by reference to the accompanying drawings.
Figure 2 shows that according to the alignment device for lithographic equipment of the present invention and the total arrangement between lithographic equipment, principle of work structural representation.As shown in the figure, the formation of lithographic equipment comprises: the illuminator 1 that is used for providing exposing light beam; The mask holder and the mask platform 3 that are used for supporting mask 2, the mask alignment mark RM that mask pattern is arranged on mask 2 and have periodic structure; Be used for the mask pattern on mask 2 is projected to the projection optical system 4 of wafer 6; The chip support and the wafer station 8 that are used for supporting wafer 6, have on wafer station 8 and be carved with the reference mark FM datum plate 9 of (including the reflection-type mark aimed at for wafer station and the transmission-type mark of mask registration), the alignment mark WM of periodicity optical structure is arranged on wafer 6; Also comprise the off-axis alignment system 5 of aiming at for wafer aligned and wafer station.
Wherein, illuminator 1 comprises that a light source, one make the lens combination of illumination homogenising, catoptron, a condenser (all not shown in figure).As a light source cell, can adopt KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), F
2Laser instrument (wavelength 157nm), Kr
2Laser instrument (wavelength 146nm), Ar
2Laser instrument (wavelength 126nm) or use ultrahigh pressure mercury lamp (g-line, i-line) etc.The exposing light beam IL of illuminator 1 uniform irradiation is radiated on mask 2, includes the mask mark RM of mask pattern and periodic structure on mask 2, is used for mask registration.Mask platform 3 can move in perpendicular to the X-Y plane of illuminator optical axis (overlapping with the optical axis AX of projection objective), and moves with specific sweep velocity in predetermined direction of scanning (being parallel to X-direction).Mask platform 3 belows, projection optical system 4 (projection objective) position, its optical axis AX is parallel to Z-direction.
Transmission-type mark by datum plate on wafer station 8 is aimed at mask alignment mark RM, realizes mask registration.Illuminator 1 shines radiation laser beam on mask mark RM, then projection forms aerial images through optical projection system 4, and with this aerial image of transmission-type marker detection; Sniffer 11 is the radiation information after through datum plate flag F M transmission for detection of aerial image; Mask platform position sensor 7 and work stage position sensor 10 are surveyed respectively mask platform 3 in the alignment scanning process and the locus of wafer station 8, synchro measure obtains the radiation information in sniffer 11, all information acquisitions of detecting in registration signal treating apparatus 12, are carried out registration signal and processed and obtain aligned position.
Measure the reference mark of datum plate on a plurality of alignment marks of being positioned on wafer and wafer station by off-axis alignment system 5, realize that wafer aligned and wafer station aim at.
The alignment information of off-axis alignment system 5 is transferred to registration signal treating apparatus 12, carries out the registration signal processing and obtains aligned position.
Figure 3 shows that the present invention is used for the structural representation of the alignment detection device of lithographic equipment.Wafer station datum plate 30 on wafer station is a kind of quartz plates with the chromium layer, this quartz plate lower surface is coated with the chromium layer, what be used for that the transmission-type mark 32 of mask registration adopts is a kind of amplitude grating mark with multiple-branching construction, and transmission-type mark 32 is etching on the chromium layer of datum plate lower surface; The reflection-type mark 31 that is used for the wafer station aligning is a kind of phase grating marks, reflection-type mark 31 is in quartz plate upper surface etching, and in the protection of the marked region plating reflection horizon of wafer station datum plate, the zone of transmission-type mark 32 top correspondences and other regional all plating reflection horizon not; Photon conversion crystal 33 is a kind of scintillation crystals, is used for ultraviolet light is converted to visible light.Photon conversion crystal 33 directly is connected with transmission-type mark 32, and avoid that photon is changed crystal and be connected with datum plate by blind hole, and the center of photon conversion crystal 33 and the center-aligned of transmission-type mark 32; Be useful on the through hole that photon conversion crystal 33 is installed and the hole of locating dowel 36 on optical bracket 34, be used for mechanical support and the optics isolation of photon conversion crystal; The quantity of photon conversion crystal 33 is consistent with the quantity of transmission-type mark 32, and the number of openings of optical bracket 34 is corresponding with photon conversion crystal 33 quantity, and the hole of location dowel 36 is at least two.Optically filtering sheet 37 is used for the outer nothing of filtering visible light wave range to be used up, and the quantity of optically filtering sheet 37 is corresponding with photon conversion crystal 33 quantity, and diameter is convenient to the outer nothing of effective elimination visible light wave range and is used up greater than the diameter of photon conversion crystal 33; Division board 35 is made by high thermal insulation ceramics material, is used for a plurality of unit light that see through optical bracket 34 are propagated isolation and isolated extraneous thermal source, and is distributed with the through hole corresponding with optically filtering sheet 37 quantity.Optically filtering sheet 37 is installed in the through hole of division board 35.Division board 35 directly is connected with optical bracket 34, and by location dowel 36, both is located by connecting, and improves bearing accuracy.Optical fiber 38 is a kind of multimode optical fibers greater than spot diameter, be used for to focus on by the beam and focus after optically filtering sheet 37, and with optical signal detection to follow-up signal processing circuit.Optical fiber 38 directly is connected with optically filtering sheet 37, comprises at least lens that are used for focal beam spot with the end face that optically filtering sheet 37 directly is connected, and be beneficial to the capacity usage ratio that improves light signal, and the quantity of optical fiber 38 is consistent with optically filtering sheet 37 quantity.By the aberration of this structure generation before aligning by system compensation.
Produce in the process that relative position moves in wafer station and mask platform, the flashlight that produces through optical projection system is from the 30 top incidents of wafer station datum plate, projecting photon conversion crystal transition is visible light, and through optically filtering sheet 37, and surveyed to the photodetection module of follow-up signal processing apparatus by optical fiber 38, process through signal again, detect the variation that obtains above-mentioned space pattern, obtain the mask registration position.
The off-axis alignment systematic survey is positioned at alignment mark on wafer and the reference mark of wafer station datum plate, realize that wafer aligned aims at wafer station, concrete principle can be with reference to prior art, as Chinese invention patent CN10111435A, and denomination of invention: a kind of alignment system for lithographic equipment; CN101158814A, denomination of invention: a kind of for the mark of litho machine aligning and the alignment methods of using this mark.In the present invention, the flashlight that produces by optical projection system 4 shines the reflection-type mark 31 of wafer station datum plate 30, produces 3 levels time diffraction light, then through the 5 interference imagings detections of off-axis alignment system, by follow-up signal processing apparatus collection, obtain the aligned position of wafer and wafer station.Equally, also applicable to the ATHENA off-axis alignment system of ASML, concrete structure can be referring to Chinese invention patent CN1506768A, denomination of invention for the reflection-type mark of this wafer station datum plate: the alignment system and the method that are used for etching system.
Described in this instructions is several preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (11)
1. alignment detection device that is used for lithographic equipment comprises:
The wafer station datum plate has the transmission-type mark that at least one is used for mask registration, and described mark is formed on the lower surface of wafer station datum plate;
Photon conversion crystal is used for ultraviolet light is converted to visible light, and its quantity is identical with the quantity of transmission-type mark, the center of each photon conversion crystal and the center-aligned of corresponding transmission-type mark;
Optical bracket has the hole for the through hole that photon conversion crystal is installed and location dowel on it, the quantity of through hole is identical with the quantity of photon conversion crystal;
Division board is used for the light beam that sees through optical bracket is propagated isolation, have on it with optical bracket on the through hole of number of openings equal number;
The optically filtering sheet is used for the outer nothing of filtering visible light wave range and uses up, and each is installed in respectively in respective through hole on division board;
Optical fiber, each directly is connected with corresponding optically filtering sheet.
2. alignment detection device according to claim 1, wherein, the end face that each optical fiber is connected with the optically filtering sheet comprises the lens for focal beam spot.
3. alignment detection device according to claim 1, wherein, the upper surface of wafer station datum plate has the reflection-type mark, is used for wafer station and aims at.
4. alignment detection device according to claim 3, wherein, the wafer station datum plate is the quartz plate with the chromium layer, and the chromium layer is plated on the lower surface of quartz plate, and the transmission-type mark is formed on the chromium layer, and the reflection-type mark is formed on the upper surface of quartz plate.
5. alignment detection device according to claim 4, wherein, the transmission-type mark is the amplitude grating mark with multiple-branching construction, the reflection-type mark is the phase grating mark.
6. alignment detection device according to claim 4, wherein, photon conversion crystal is scintillation crystal.
7. alignment detection device according to claim 4, wherein, the reflection-type marked region plating reflection horizon protection of wafer station datum plate, the zone that transmission-type mark top is corresponding and other regional all plating reflection horizon not.
8. alignment detection device according to claim 4, wherein, described optical fiber is the multimode optical fiber greater than the spot diameter that is incident to fiber end face.
9. alignment detection device according to claim 4, wherein, the diameter of optically filtering sheet is greater than the diameter of photon conversion crystal.
10. according to claim 1～9 described alignment detection devices of any one, wherein, division board is connected with optical bracket by the location dowel, and the hole that is used for installing the location dowel on optical bracket has two at least, and quantity is identical with the quantity of locating dowel.
11. alignment detection device according to claim 10, wherein, division board is made by high thermal insulation ceramics material, can isolate extraneous thermal source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010181612 CN102253603B (en) | 2010-05-21 | 2010-05-21 | Alignment detection device for photoetching equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010181612 CN102253603B (en) | 2010-05-21 | 2010-05-21 | Alignment detection device for photoetching equipment |
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| CN102253603A CN102253603A (en) | 2011-11-23 |
| CN102253603B true CN102253603B (en) | 2013-05-22 |
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| JP6025346B2 (en) * | 2012-03-05 | 2016-11-16 | キヤノン株式会社 | Detection apparatus, exposure apparatus, and device manufacturing method |
| CN106772662B (en) * | 2017-02-09 | 2019-02-05 | 刘至键 | A kind of monitoring device of the buried well lid of cable television optical network network |
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|---|---|---|---|---|
| CN1534387A (en) * | 2002-09-20 | 2004-10-06 | Asml荷兰有限公司 | Photoetching mark structure, photoetching projection device and method of proceeding base plate aligning |
| CN101158814A (en) * | 2007-08-31 | 2008-04-09 | 上海微电子装备有限公司 | Marker for photo-etching machine aligning and aligning using the same |
| CN101487986A (en) * | 2009-02-18 | 2009-07-22 | 上海微电子装备有限公司 | Sensor of photo-etching equipment, its production method and self-calibration method |
| CN101576714A (en) * | 2009-06-09 | 2009-11-11 | 上海微电子装备有限公司 | Alignment datum plate of photoetching device and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4235468B2 (en) * | 2003-02-28 | 2009-03-11 | キヤノン株式会社 | Semiconductor manufacturing equipment |
| JP4817700B2 (en) * | 2005-04-04 | 2011-11-16 | キヤノン株式会社 | Exposure apparatus and method, and device manufacturing method |
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- 2010-05-21 CN CN 201010181612 patent/CN102253603B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1534387A (en) * | 2002-09-20 | 2004-10-06 | Asml荷兰有限公司 | Photoetching mark structure, photoetching projection device and method of proceeding base plate aligning |
| CN101158814A (en) * | 2007-08-31 | 2008-04-09 | 上海微电子装备有限公司 | Marker for photo-etching machine aligning and aligning using the same |
| CN101487986A (en) * | 2009-02-18 | 2009-07-22 | 上海微电子装备有限公司 | Sensor of photo-etching equipment, its production method and self-calibration method |
| CN101576714A (en) * | 2009-06-09 | 2009-11-11 | 上海微电子装备有限公司 | Alignment datum plate of photoetching device and manufacturing method thereof |
Non-Patent Citations (3)
| Title |
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| JP特开2006-287103A 2006.10.19 |
| 戈亚萍.相位光栅对准技术研究.《中国优秀硕士学位论文全文数据库 信息科技辑》.2009, |
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Address after: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Co-patentee after: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Co-patentee before: Shanghai Micro And High Precision Mechine Engineering Co., Ltd. Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
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