CN102251277B - Zinc oxide transparent conductive film and production method thereof - Google Patents
Zinc oxide transparent conductive film and production method thereof Download PDFInfo
- Publication number
- CN102251277B CN102251277B CN201010241752.9A CN201010241752A CN102251277B CN 102251277 B CN102251277 B CN 102251277B CN 201010241752 A CN201010241752 A CN 201010241752A CN 102251277 B CN102251277 B CN 102251277B
- Authority
- CN
- China
- Prior art keywords
- zno
- growth
- layer
- zinc oxide
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a zinc oxide transparent conductive film and a production method thereof. The zinc oxide transparent conductive film comprises a ZnO nucleating layer, a ZnO main body layer and a crown nano-cylindrical ZnO layer which are sequentially attached to the surface at one side of a lining material, wherein the crown nano-cylindrical ZnO layer is provided with a plurality of crown nano-cylindrical surfaces; the span of a crown of the crown nano-cylindrical ZnO layer is 10-1000nm; and the distance between the top of the crown to the ZnO main body layer is 10-600nm. The production method comprises the following steps of: pre-treating a growth substrate; pre-depositing; growing the ZnO nucleating layer; growing the ZnO main body layer; and growing the crown nano-cylindrical ZnO layer. ZnOTCL obtained by using the production method of the zinc oxide transparent conductive film can be used for accurately controlling the growth quality and the morphology except for meeting excellent conductive and transparent characteristics and has the surface morphology of the photonic crystal characteristic and higher optical extraction efficiency; and the LED (Light Emitting Diode) external quantum efficiency can be greatly improved, the considerable development of the LED industry is promoted and the realization on the purposes of environment friendliness, energy saving and sustainable development is facilitated.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of transparent conductive film and manufacture method thereof, particularly a kind of zinc oxide transparent conducting film and manufacture method thereof.
Background technology
Gallium nitride light-emitting diode (GaN-LED) is as the core devices of realizing solid-state illumination, and external quantum efficiency is low is its major obstacle further developing.For improving the external quantum efficiency of GaN-LED, people have done a large amount of research work for many years, use TCL(Transparent Conductive Layer, transparency conducting layer) be to improve a kind of the most effective method of external quantum efficiency known at present.
The TCL of GaN-LED mainly adopts Ni/Au(nickel billon at present) or ITO(Indium Tin is Oxides, tin-doped indium oxide) material, film plating process is electron beam evaporation.Ni/AuTCL evenly spreads in order to ensure electric current, require TCL to have certain thickness, and ensureing in the uniform situation of current spread, Ni/Au is at the light transmission rate of visible light wave range only up to 76%, and this has greatly limited the application of Ni/Au TCL in the field such as backlight, high-power illumination.And for ITO TCL, though proved that it has high visible light transmittance and lower resistivity, and widely apply in photoelectric device industry, but heavy atom In(indium in ITO) easily diffusion under middle high temperature, thereby cause the degradation of ITO TCL, it is restricted in high-power applications field.In or valuable rare metal simultaneously, under following solid-state illumination generally uses, by the problem that faces resource exhaustion and can not maintain.
ZnO(zinc oxide) material not only has the lattice almost mating completely with GaN, also there is very high visible light transmissivity, the characteristics such as lower resistivity, but also there is the features such as cost of material is cheap, material non-toxic environmental protection, be the following Ni/Au of replacement and ITO, what become TCL of new generation mainly can material selection.But the growth of ZnO TCL great majority use sputtering technology at present, can not precisely control film quality and the appearance structure of extension, only can meet basic conduction and transparent characteristic.
In sum, existing ZnO TCL and manufacturing technology thereof need to improve.
Summary of the invention
One of technical problem to be solved by this invention is to provide a kind of zinc oxide transparent conductive film, solves zinc oxide transparent conductive film in prior art and can not precisely control the film quality of extension and the problem of appearance structure.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of zinc oxide transparent conducting film, it comprises that order is attached to the ZnO nucleating layer of backing material one side surface, ZnO body layer and circle hat nanometer column ZnO layer, described circle hat nanometer column ZnO layer is attached to described ZnO body layer outer surface; The span length of the circle hat of described circle hat nanometer column ZnO layer is 10 to 1000nm, and circle is preced with top apart from ZnO body layer 10 to 600nm.
Two of technical problem to be solved by this invention is manufacture methods that a kind of zinc oxide transparent conductive film is provided accordingly.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A manufacture method for zinc oxide transparent conducting film, comprises the steps:
S1), growth substrates preliminary treatment: chemical cleaning and furnace high-temperature processing are carried out in the surface of the epitaxial wafer as growth substrates material;
S2), pre-deposition: at epitaxial wafer one side surface pre-deposition Zn, Mg, Ga, or the oxide of Zn, Mg, Ga;
S3), ZnO nucleating layer growth: form ZnO nucleating layer on GaN-LED epitaxial wafer surface;
S4), ZnO body layer growth: utilize layer by layer growth mode to build brilliant, obtain stratiform ZnO body layer fine and close, surface smoothing;
S5), circle hat nanometer column ZnO layer growth: utilizing mixed growth pattern to grow some diameters in ZnO body layer outside is 10 to 1000nm, has the circle hat nanometer column ZnO layer of the circle hat nanometer column surface topography of photonic crystal characteristic.
The invention has the beneficial effects as follows:
The ZnO TCL that adopts the manufacture method of zinc oxide transparent conducting film of the present invention to obtain, except meeting good conduction and transparent characteristic, can also precisely control growth quality and control pattern, utilize the refractive index of ZnO and the difference of air and surface topography feature, can form the surface topography with photonic crystal characteristic, thereby make its extraction efficiency to optics reach higher characteristic; Thereby apply the ZnO TCL of the manufacture method manufacturing of ZnO TCL of the present invention, there is high reliability, low-resistivity, high light transmittance and efficient light extraction efficiency, can improve greatly LED external quantum efficiency, can promote the tremendous development of LED industry, be conducive to realize the target of environmental protection and energy saving, sustainable development.
Brief description of the drawings
Fig. 1 is the structural representation of GaN LED epitaxial wafer and ZnO TCL in the specific embodiment of the invention.
Fig. 2 is the epitaxially grown schematic flow sheet of ZnO TCL in the specific embodiment of the invention.
Fig. 3 is the resistivity measurement figure to ZnO TCL sample in the specific embodiment of the invention.
Fig. 4 is the light transparent transmission rate resolution chart to ZnO TCL sample in the specific embodiment of the invention.
Fig. 5 is the scanning electron microscope (SEM) photograph to ZnO TCL sample layer structure in the specific embodiment of the invention.
Fig. 6 is the scanning electron microscope (SEM) photograph to ZnO TCL sample surfaces structure in the specific embodiment of the invention.
Fig. 7 is the XRD diffraction pattern to ZnO TCL sample in the specific embodiment of the invention.
Fig. 8 is the spontaneous sharp spectrogram of penetrating of the PL of ZnO TCL sample in the specific embodiment of the invention.
Fig. 9 is that in the specific embodiment of the invention, ZnO TCL is applied in the work illuminated diagram on LED chip.
Figure 10 is that in the specific embodiment of the invention, ZnO TCL and ITOTCL, Ni/AuTCL are applied in electric current and the optical output power figure on LED chip.
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment
Embodiment mono-
The object of this embodiment is to provide the method for the ZnO of manufacture TCL a kind of, produces a kind of novel ZnO TCL.The ZnO TCL that the method produces as shown in Figure 1, comprises that order is attached to the ZnO nucleating layer of GaN-LED epitaxial wafer one side, ZnO body layer and circle hat nanometer column ZnO layer.Through test, this ZnO TCL has lower resistivity, higher visible ray penetrance, and film surface appearance can, around photonic crystal size Control, have very high Lattice Matching degree with GaN; When the method is applied to GaN-LED, can obviously improve the efficiency of the outer quantum of GaN-LED chip.
For obtaining above-mentioned ZnO TCL, the preliminary thinking of the present invention is:
Utilize existing industrial production type MOCVD(Metal-organic Chemieal Vapor DePosition, metallo-organic compound chemical vapor deposition) or MBE(Molecular Beam Epitaxy molecular beam epitaxy) etc. equipment, with organic metal DEZn(diethyl zinc) as Zn source, organic metal TMAl(trimethyl aluminium), TEGa(triethyl-gallium), TMIn(trimethyl indium), Cp2Mg cyclopentadienyl group magnesium is doping metals source, purity is more than 99.9999% O
2as oxygen source, purity is more than 99.999% Ar(argon gas), He(helium) as carrier gas and epitaxial growth protective atmosphere, on backing material, progressively epitaxial growth goes out ZnO TCL.
As shown in Figure 2, the concrete steps of preparing the above ZnO TCL are:
1, growth substrates preliminary treatment
Growth substrates preliminary treatment mainly comprises: chemical cleaning and furnace high-temperature processing are carried out in the epitaxial wafer surface as growth substrates material, for follow-up epitaxial growth is prepared.
Get GaN-LED epitaxial wafer and carry out surface acid alkalization and learn the processing of removing contamination at this place, the temperature in stove of again MOCVD being grown is controlled at 400 to 900 degrees Celsius, pressure is controlled at 3 to 100torr(Bristols, 1torr is equivalent to 1 millimetres of mercury), heat treatment 1 to 60 minute, as the substrate of subsequently epitaxial growing ZnO TCL.
The temperature that this place particularly controls in MOCVD growth stove is 650 degrees Celsius, and pressure is 10torr, and the processing time is 20 minutes.
2, pre-deposition
Pre-deposition refers in MOCVD, MBE homepitaxy equipment; under the protective atmosphere of Ar or He; temperature is controlled to 200 to 450 degrees Celsius; pressure is controlled at 2 to 20torr; 5 to 120 seconds retention times; pass into DEZn(diethyl zinc with the flow of 8.6E-6 to 2.1E-4 moles/min), thus deposit certain organic metal Zn at epitaxial wafer one side surface.
Originally be under Ar atmosphere, adjust in MOCVD stove temperature to 350 degree Celsius, pressure control is 8.4torr, passes into organic metal DEZn, the flow of DEZn is 4.9E
-5moles/min, the time of passing into is 30 seconds, makes to form rich Zn state as a side surface of the GaN-LED epitaxial wafer of epitaxial growth substrate, for follow-up epitaxial growth provides good basis.
3, ZnO nucleating layer growth
The growth of ZnO nucleating layer refers to, in epitaxial device, under protective atmosphere, adjusts growth temperature and remains on 200 to 900 degrees Celsius, then passes into organic metal DEZn, and the flow control of DEZn is at 1.36E
-5to 1.1E
-4moles/min also passes into O
2, O
2flow control at 4.5E
-3to 2.7E
-2moles/min, pressure is controlled at 3 to 100torr, goes out 3 to 30nm ZnO nucleating layer, for basis is done in follow-up epitaxial growth in the surface epitaxial growth of GaN-LED epitaxial wafer.
This place specifically, under Ar atmosphere, adjusts growth temperature and remains on 250 degrees Celsius, then passes into organic metal DEZn, and passes into O
2, pressure is controlled at 30torr and carries out epitaxial growth, makes the surface of GaN-LED epitaxial wafer form 10nm(nanometer) and the ZnO nucleating layer of thickness.
4, ZnO body layer growth
ZnO body layer is grown, and in epitaxial device, under protective atmosphere, growth temperature is controlled to 300 to 900 degrees Celsius, and reacting furnace pressure 3, to 100torr, mixes doping metals source TEGa, and flow is 2.18E
-6to 8.4E
-4moles/min, then will pass into O
2speed bring up to 4.5E
-3 extremely2.7E
-2moles/min is brought up to 2.73E by the speed that passes into organic metal DEZn simultaneously
-5to 1.09E
-3moles/min, thus the speed of growth accelerated, grow thickness and be 50 to 5000nm ZnO body layer.
In this step, utilize stratiform (F-M, Frank-van der Merwe) growth pattern to build brilliant, obtain stratiform ZnO body layer fine and close, surface smoothing, this layer reduces light propagation loss mainly as optical waveguide layers.When growth ZnO body layer, need to use three-group metal to adulterate as TEGa, TMAl, TMIn etc., realize the N-shaped conduction of film; Described doping metals source is one in TEGa, TMAl, TMIn, two kinds or three kinds.
This place specifically, under Ar atmosphere, adjusts growth temperature to 850 degree Celsius, mixes organic metal TEGa, and molar flow is 4.36E
-5moles/min, then improves and passes into organic metal DEZn and O
2mole respectively to 1.3E
-4moles/min and 6.7E
-2moles/min, grows compact structure, surfacing, the stratiform ZnO body layer that thickness is 700nm, and the N-type ZnO layer of the Ga that adulterates, next interrupts passing into of metal Organic Ingredients, but keeps O
2flow stop growing.
5, circle hat nanometer column ZnO layer growth
Circle hat nanometer column ZnO layer growth is to utilize to mix (S-K, Stranski-Krastanov) growth pattern, grow some circle hat span length in ZnO body layer outside and be 10 to 1000nm, circle hat top is 10 to 600nm apart from the distance of laminar film, has the circle hat nanometer column ZnO layer of the circle hat nanometer column surface topography of photonic crystal characteristic.Circle hat nanometer column ZnO layer makes the long-pending increase of light output surface, and can also play lensing, thereby can make the outgoing efficiency of light higher.
This step is processed by growth is online under Ar atmosphere, and by the pressure decreased to 2 of MOCVD epitaxial furnace, to 50torr, temperature is reduced to 250 to 650 degrees Celsius, keeps doping metals Ga to continue to pass into 10 seconds to 10 minutes, next stops passing into O
2with organic metal DEZn, keep interface to stop growth 1 to 20 minute, then pass into as the raw-material O of growth
2with organic metal DEZn, TEGa, induced growth pattern changes mixed growth pattern into by layer growth before, there is the growth of the circle hat nanometer column ZnO superficial layer of photonic crystal characteristic, on ZnO body layer surface, grow circle hat span length and be 10 to 1000nm, circle hat top is apart from the circle hat nanometer column ZnO layer of the distance 10 to 600nm of laminar film, so far complete ZnO TCL.
This place particularly, processes by growth is online under Ar atmosphere, and by the pressure decreased of MOCVD epitaxial furnace, to 30torr, temperature is reduced to 550 degrees Celsius, keeps doping metals Ga to continue to pass into 2 minutes, next stops passing into O
2with organic metal DEZn, keep interface to stop growth 10 minutes, then pass into as the raw-material O of growth
2with organic metal DEZn, TEGa, induced growth pattern changes mixed growth pattern into by layer growth before, there is the growth of the circle hat nanometer column ZnO superficial layer of photonic crystal characteristic, on ZnO body layer surface, growing circle hat span length is 300nm, circle hat top is apart from the circle hat nanometer column ZnO layer of the distance 46nm of laminar film, so far complete ZnO TCL.
6, annealing in process
For the ZnO TCL that makes to grow has better optics and electrical stability, ZnO TCL need to be under Ar, He atmosphere, and keeping temperature is 400 to 900 degrees Celsius, through 1 to 60 minutes, has completed annealing in process.
This place particularly, under Ar atmosphere, is elevated to 900 degrees Celsius by temperature and keeps 10 minutes, thereby in MOCVD growth furnace, carry out high annealing after completing circle to be preced with nanometer column ZnO layer growth.
Figure 3 shows that the resistivity that uses Hall55 measuring instrument to record generated ZnO TCL sample, the resistivity of this ZnO TCL sample is lower than 5E-4 Ω cm as seen from the figure.Figure 4 shows that and use UV2550 spectral investigator to record the transmitance of generated ZnO TCL sample to visible ray, as seen from the figure, this ZnO TCL sample for the transmitance of the visible ray of 460nm up to 94%.
Fig. 5 and Figure 6 shows that generated ZnO TCL sample
sEM(scanning electron microscopy) lower surface pattern.As seen from the figure, ZnO TCL sample comprises stratiform ZnO body layer and the circle hat nanometer column ZnO superficial layer with photonic crystal characteristic.ZnO TCL sample surfaces presents the circle hat island structure that self assembly generates, and circle hat span length reaches 600nm, and circle hat top is apart from the distance 150nm of laminar film.
Figure 7 shows that the diffraction pattern that uses Brooker D8 high-resolution XRD to record ZnO TCL sample.Figure 8 shows that and use PL(photoluminescence spectra measuring system) observe the self-excitation frequency spectrum of ZnO TCL.Analyze being of high quality of the visible gained sample of data by the specimen material in Fig. 7 and Fig. 8.Figure 9 shows that ZnO TCL is applied in the work illuminated diagram on LED chip, use SEM to observe membrane structure controlled, and favorable working performance, whole uniformly light-emitting.Figure 10 shows that the correction data of ZnO, ITO, Ni/Au TCL chip photoelectricity test, specifically use respectively Ni/Au, ITO and ZnO as TCL layer the GaN LED epitaxial wafer of same quality, then be processed into the chip crystal grain of 200um*250um, then pass to electric current, then measure the optical output power data of three kinds of chips.Known through calculating, to apply ZnO TCL of the present invention and be processed into LED chip element, the LED chip element that it is processed into than the Ni/Au TCL under the same terms and ITO TCL, is that light extraction efficiency under 20mA promotes respectively 120% and 57% at input current.
In sum, the ZnO TCL that the present invention utilizes MOCVD, PECVD, MBE homepitaxy deposition growing technology to obtain, except meeting good conduction and transparent characteristic, can also precisely control growth quality and control pattern, utilize the refractive index of ZnO and the difference of air and surface topography feature, can form the surface topography with photonic crystal characteristic, thereby make its extraction efficiency to optics reach higher characteristic; Thereby apply the ZnO TCL of the manufacture method manufacturing of ZnO TCL of the present invention, there is high reliability, low-resistivity, high light transmittance and efficient light extraction efficiency, can improve greatly LED external quantum efficiency, can promote the tremendous development of LED industry, be conducive to realize the target of environmental protection and energy saving, sustainable development.
It should be noted that, application technical solution of the present invention grows the material of transparent conductive film, comprises ZnO, but is not limited only to ZnO, also comprises binary or the multivariant oxide with close character.
Embodiment bis-
The present embodiment is the same with the basic step of embodiment mono-, and just relevant parameter is not quite alike, and the relevant parameter of the last ZnO film sample that generates also has some difference, particularly, in the time that nucleating layer is grown, generates the ZnO nucleating layer of 15nm thickness.
After tested, the transmitance of the ZnO TCL sample 454nm visible ray generating is up to 93.1%, and resistivity is lower than 3.4E-4 Ω cm, and surface topography presents self assembly and generates circle hat island structure, circle hat span length reaches 560nm, and circle hat top is apart from the distance 80nm of laminar film.
Embodiment tri-
The difference of the present embodiment and embodiment mono-is:
When nucleating layer growth, temperature is controlled at 250 degrees Celsius, and pressure is controlled at 80torr, and the ZnO nucleating layer thickness growing is 22nm.
In stratiform ZnO body layer growth course, gold doping belongs to Ga while carrying out N-type ZnO layer growth, and temperature is 450 degrees Celsius, and the thickness of the N-type ZnO layer generating is 600nm.
Then under other condition is constant, pass into organic metal Al, and the mole of control organic metal Al is higher 5 times than the mole of metal Ga, continued growth 200nm.
After tested, gained ZnO TCL sample is to the transmitance of 468nm visible ray up to 92.1%, and resistivity is lower than 7.4E-4 Ω cm, and surface topography presents self assembly and generates circle hat island structure, circle hat span length reaches 150nm, and circle hat top is apart from the distance 28nm of laminar film.
Embodiment tetra-
The difference of the present embodiment and embodiment tri-is, in stratiform ZnO body layer growth course, gold doping belongs to Ga while carrying out N-type ZnO layer growth, and temperature is 850 degrees Celsius, and the thickness of the N-type ZnO layer generating is 400nm.
Then under other condition is constant, pass into organic metal In, and the mole of control organic metal In is higher 3.5 times than the mole of metal Ga, continued growth 200nm.
After tested, gained ZnO TCL sample is in the transmitance of visible ray 528nm up to 94.2%, and resistivity is lower than 2.6E-4 Ω cm, and surface topography presents self assembly and generates circle hat island structure, and circle hat span length reaches 350nm, and circle hat top is apart from the distance 54nm of laminar film.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (5)
1. a manufacture method for zinc oxide transparent conducting film, comprises the steps:
S1), growth substrates preliminary treatment: chemical cleaning and furnace high-temperature processing are carried out in the surface of the epitaxial wafer as growth substrates material;
S2), pre-deposition: at epitaxial wafer one side surface pre-deposition Zn, Mg, Ga, or the oxide of Zn, Mg, Ga;
S3), ZnO nucleating layer growth: form ZnO nucleating layer on GaN-LED epitaxial wafer surface;
S4), ZnO body layer growth: utilize layer by layer growth mode to build brilliant, obtain stratiform ZnO body layer fine and close, surface smoothing; Be specially: in epitaxial device, under protective atmosphere, growth temperature is controlled to 300 to 900 degrees Celsius, mixes doping metals source, then improve and pass into O
2and the speed of organic metal DEZn;
S5), ZnO layer growth: utilize mixed growth pattern to grow some ZnO layers with photonic crystal characteristic in ZnO body layer outside;
S51), under Ar atmosphere, process by growth is online, by the pressure decreased to 2 of MOCVD epitaxial furnace, to 50torr, temperature is reduced to 250 to 650 degrees Celsius, keeps doping metals TEGa to continue to pass into 10 seconds to 10 minutes;
S52), stop passing into O
2with organic metal DEZn, keep interface to stop growth 1 to 20 minute, then pass into as the raw-material O of growth
2with organic metal DEZn, TEGa, induced growth pattern changes mixed growth pattern into by layer growth before, has the growth of the ZnO superficial layer of photonic crystal characteristic, so far complete ZnO TCL.
2. the manufacture method of a kind of zinc oxide transparent conducting film as claimed in claim 1, it is characterized in that, step S1) described in growth substrates preliminary treatment be specially, get GaN-LED epitaxial wafer and carry out surface acid alkalization and learn processings of removing contamination, then in epitaxial device, to keep temperature be that 400 to 900 degrees Celsius, pressure are 3 to 100torr furnace high-temperatures processing 1 to 60 minute.
3. the manufacture method of a kind of zinc oxide transparent conducting film as claimed in claim 1, is characterized in that, step S2) described in pre-deposition be specially; under protective atmosphere; adjust epitaxial device parameter, then pass into organic metal DEZn, make to form rich Zn state as a side surface of epitaxial growth substrate.
4. the manufacture method of a kind of zinc oxide transparent conducting film as claimed in claim 1; it is characterized in that; step S3) described in ZnO nucleating layer growth be specially; in epitaxial device; under protective atmosphere; adjust growth temperature and remain on 200 to 900 degrees Celsius, then pass into organic metal DEZn, and pass into O
2, pressure is controlled at 3 to 100torr, and epitaxial growth goes out 3 to 30nm ZnO nucleating layer.
5. the manufacture method of a kind of zinc oxide transparent conducting film as described in any one in claim 1 to 4; it is characterized in that; described step S5) after also comprise step S6) annealing in process; described annealing in process refers in epitaxial device; under protective atmosphere, by temperature remain on 400 to 900 degrees Celsius 1 to 60 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010241752.9A CN102251277B (en) | 2010-08-02 | 2010-08-02 | Zinc oxide transparent conductive film and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010241752.9A CN102251277B (en) | 2010-08-02 | 2010-08-02 | Zinc oxide transparent conductive film and production method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102251277A CN102251277A (en) | 2011-11-23 |
| CN102251277B true CN102251277B (en) | 2014-06-25 |
Family
ID=44978834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010241752.9A Active CN102251277B (en) | 2010-08-02 | 2010-08-02 | Zinc oxide transparent conductive film and production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102251277B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8796693B2 (en) * | 2012-12-26 | 2014-08-05 | Seoul Semiconductor Co., Ltd. | Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO |
| CN104409600A (en) * | 2014-11-14 | 2015-03-11 | 浙江大学 | Near-infrared light-emitting device and preparation method thereof |
| CN107394023B (en) * | 2016-08-17 | 2019-08-20 | 中山大学 | A kind of preparation method of crystallized nano structure zinc oxide transparent conductive film |
| CN109994629B (en) * | 2017-12-29 | 2021-01-29 | Tcl科技集团股份有限公司 | Composite film and preparation method and application thereof |
| CN113130716B (en) * | 2021-04-21 | 2023-02-28 | 京东方科技集团股份有限公司 | Light emitting diode device, preparation method thereof and display device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009069785A1 (en) * | 2007-11-29 | 2009-06-04 | Kyocera Corporation | Light emitting element and illuminating apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1791186A1 (en) * | 2005-11-25 | 2007-05-30 | Stormled AB | Light emitting diode and method for manufacturing the same |
| WO2010033792A1 (en) * | 2008-09-18 | 2010-03-25 | Lumenz Llc | Textured semiconductor light-emitting devices |
-
2010
- 2010-08-02 CN CN201010241752.9A patent/CN102251277B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009069785A1 (en) * | 2007-11-29 | 2009-06-04 | Kyocera Corporation | Light emitting element and illuminating apparatus |
Non-Patent Citations (2)
| Title |
|---|
| Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency;J.Zhong et al;《APPLIED PHYSICS LETTERS》;20070518;第90卷;203515 * |
| J.Zhong et al.Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency.《APPLIED PHYSICS LETTERS》.2007,第90卷 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102251277A (en) | 2011-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Høiaas et al. | GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-layer graphene as substrate and transparent electrode | |
| CN102255026B (en) | Gallium nitride light-emitting diode chip with vertical structure and manufacturing method thereof | |
| CN102251277B (en) | Zinc oxide transparent conductive film and production method thereof | |
| CN102326266B (en) | Light-emitting diode element and method for manufacturing same | |
| CN101908505B (en) | Method for manufacturing light-emitting diode chip | |
| CN102169930B (en) | Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles | |
| CN104505445B (en) | A kind of LED chip production method of composite transparent conductive electrode | |
| Jeong et al. | Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy | |
| CN106783948A (en) | Growth InN nano-pillar epitaxial wafers on a si substrate and preparation method thereof | |
| CN106299041A (en) | The preparation method and application of the nonpolar LED being grown in r surface sapphire substrate | |
| Zhang et al. | Controllable hydrothermal synthesis of ZnO nanowires arrays on Al-doped ZnO seed layer and patterning of ZnO nanowires arrays via surface modification of substrate | |
| CN106328777A (en) | Light emitting diode stress release layer epitaxial growth method | |
| CN102097548A (en) | Method for preparing self-supported GaN-based light emitting diode | |
| CN103114332A (en) | Method for preparing gallium nitride monocrystal substrate by surface modification auto-separation | |
| CN101381891A (en) | Method for preparing MgZnO single crystal film | |
| CN204303857U (en) | A kind of nitride LED epitaxial slice structure using the derivative film of two dimension | |
| CN106384764A (en) | LED epitaxial structure and growing method thereof | |
| CN102270723A (en) | Zinc oxide transparent conductive film and preparation method thereof | |
| CN105336825B (en) | A kind of LED epitaxial growth method | |
| CN105088181A (en) | MOCVD preparation method for silicon-based quantum dot laser material | |
| CN204167345U (en) | A kind of nitride LED epitaxial structure using SiC substrate | |
| CN101546799A (en) | Preparation method of nitride LED with vertical structure | |
| CN206271710U (en) | Growth InN nano-pillar epitaxial wafers on a si substrate | |
| CN105720150A (en) | Zinc oxide-base transparent electrode structure GaN-base LED chip and manufacturing method thereof | |
| Inguva et al. | Crystalline ZnO/amorphous ZnO core/shell nanorods: self-organized growth, structure, and novel luminescence |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FOSHAN GRADUATE SCHOOL OF SUN YAT-SEN UNIVERSITY Free format text: FORMER NAME: FOSHAN RESEARCH INSTITUTE OF ZHONGSHAN UNIVERSITY |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 528222, Guangdong, Foshan Province Nanhai software technology park, information Avenue North R & D building, A building, third floor Patentee after: Foshan Graduate School of Sun Yat-sen University Patentee after: Foshan Zhonghao Photoelectric Technology Co.,Ltd. Address before: 528222, Guangdong, Foshan Province Nanhai software technology park, information Avenue North R & D building, A building, third floor Patentee before: Research Institute of SUN Yat-sen University in Foshan Patentee before: Foshan Zhonghao Photoelectric Technology Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: FOSHAN EVERCORE OPTOELECTRONIC TECHNOLOGY CO., LTD Free format text: FORMER OWNER: FOSHAN GRADUATE SCHOOL OF SUN YAT-SEN UNIVERSITY Effective date: 20150825 Free format text: FORMER OWNER: FOSHAN EVERCORE OPTOELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20150825 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150825 Address after: 528225 A304 building, A building, Nanhai software science and Technology Park, Nanhai Town, Nanhai District, Nanhai District, Guangdong, Foshan Patentee after: Foshan Zhonghao Photoelectric Technology Co.,Ltd. Address before: 528222, Guangdong, Foshan Province Nanhai software technology park, information Avenue North R & D building, A building, third floor Patentee before: Foshan Graduate School of Sun Yat-sen University Patentee before: Foshan Zhonghao Photoelectric Technology Co.,Ltd. |