CN102237870B - 触发器与具有触发器的分频电路 - Google Patents
触发器与具有触发器的分频电路 Download PDFInfo
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- CN102237870B CN102237870B CN201010174447.2A CN201010174447A CN102237870B CN 102237870 B CN102237870 B CN 102237870B CN 201010174447 A CN201010174447 A CN 201010174447A CN 102237870 B CN102237870 B CN 102237870B
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CN201010174447.2A CN102237870B (zh) | 2010-04-28 | 2010-04-28 | 触发器与具有触发器的分频电路 |
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CN201010174447.2A CN102237870B (zh) | 2010-04-28 | 2010-04-28 | 触发器与具有触发器的分频电路 |
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CN102237870A CN102237870A (zh) | 2011-11-09 |
CN102237870B true CN102237870B (zh) | 2014-09-03 |
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CN201010174447.2A Active CN102237870B (zh) | 2010-04-28 | 2010-04-28 | 触发器与具有触发器的分频电路 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1193221A (zh) * | 1997-02-26 | 1998-09-16 | 日本电气株式会社 | 用于扫描测试的双稳触发电路 |
CN1648972A (zh) * | 2004-01-28 | 2005-08-03 | 夏普株式会社 | 触发器、移位寄存器、及有源矩型显示装置 |
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- 2010-04-28 CN CN201010174447.2A patent/CN102237870B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1193221A (zh) * | 1997-02-26 | 1998-09-16 | 日本电气株式会社 | 用于扫描测试的双稳触发电路 |
CN1648972A (zh) * | 2004-01-28 | 2005-08-03 | 夏普株式会社 | 触发器、移位寄存器、及有源矩型显示装置 |
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CN102237870A (zh) | 2011-11-09 |
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Effective date of registration: 20201026 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201026 Address after: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 518057, Guangdong, Shenzhen hi tech Zone, South District, science and technology, South ten road, Shenzhen Institute of Aerospace Science and technology innovation, C block, building 4 Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |
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