CN102237787A - RF (radio frequency) energy charge pump - Google Patents
RF (radio frequency) energy charge pump Download PDFInfo
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- CN102237787A CN102237787A CN2010101514305A CN201010151430A CN102237787A CN 102237787 A CN102237787 A CN 102237787A CN 2010101514305 A CN2010101514305 A CN 2010101514305A CN 201010151430 A CN201010151430 A CN 201010151430A CN 102237787 A CN102237787 A CN 102237787A
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Abstract
The invention provides an RF (radio frequency) energy charge pump which is used for converting the received RF signals into DC (direct current) signals and then outputting the DC signals, and comprises an RF energy input end, a DC output end, an elementary unit with a Dickson structure and a control end, wherein the RF energy input end receives RF energies; the DC output end is coupled with an external circuit; as for the elementary unit with the Dickson structure, an MOS (metal oxide semiconductor) tube is used for replacing a diode in the Dickson structure completely or partially; and the control end is connected with a grid electrode of the MOS tube and used for regulating the voltage of the grid electrode of the MOS tube. The efficiency of the RF energy charge pump is improved. Compared with the prior art, a chip with the RF energy charge pump can still work under the condition of lower RF input energies.
Description
[technical field]
The present invention relates to the REID field, particularly relate to a kind of radio-frequency (RF) energy charge pump.
[background technology]
The radio-frequency (RF) energy charge pump is the direct current that the radiofrequency signal that is used for receiving is converted to varying level.In hyperfrequency (UHF) passive electronic label, the energy of entire chip obtains by the radio-frequency (RF) energy charge pump; In the UHF passive electronic label was used, energy conversion efficiency was the most important parameter of radio-frequency (RF) energy charge pump, and efficient is high more, means that chip can be worked under the lower radio frequency intake.
In the current UHF passive electronic label product, charge pump has two kinds of implementations: contain Schottky diode structure and pure CMOS tubular construction.Contain the structure of Schottky diode, ghost effect is little, and is simple in structure, but consistency is poor; Pure CMOS tubular construction consistency is better relatively, but energy loss is big, and ghost effect is big.The existing charge efficiency of pump (surveying under radio-frequency (RF) input power-14.5dbm) is the highest between 20%-30%, and efficient is on the low side, remains further to be improved.
[summary of the invention]
For solving the above-mentioned problems in the prior art, the invention provides a kind of radio frequency energy of a charge pump, it can significantly improve power output than prior art.
The present invention adopts following technical scheme: a kind of radio-frequency (RF) energy charge pump, the radiofrequency signal that is used for receiving is converted to direct current output, described radio-frequency (RF) energy charge pump comprises: radio-frequency (RF) energy input and dc output end, described radio-frequency (RF) energy input received RF energy, described dc output end is coupled on the external circuit; The elementary cell that contains the Dickson structure, it adopts the diode in the alternative or partly alternative Dickson structure of metal-oxide-semiconductor; And control end, link to each other with the grid of described metal-oxide-semiconductor, be used to adjust the height of the grid voltage of described metal-oxide-semiconductor.
Wherein, the elementary cell of the described Dickson of containing structure is some grades of series connection.
Described metal-oxide-semiconductor adopts LVT type or Native type metal-oxide-semiconductor.
The elementary cell of the described Dickson of containing structure is that half diode, half metal-oxide-semiconductor structure, pure NMOS tubular construction, pure PMOS tubular construction or half NMOS manage half PMOS tubular construction.
The present invention also provides a kind of UHF passive electronic label, this electronic tag provides energy by the radio-frequency (RF) energy charge pump, described radio-frequency (RF) energy charge pump comprises: radio-frequency (RF) energy input and dc output end, described radio-frequency (RF) energy input received RF energy, described dc output end is coupled on the external circuit; The elementary cell that contains the Dickson structure, it adopts the diode in the alternative or partly alternative Dickson structure of metal-oxide-semiconductor; And control end, link to each other with the grid of described metal-oxide-semiconductor, be used to adjust the height of the grid voltage of described metal-oxide-semiconductor.
Wherein, the elementary cell of the described Dickson of containing structure is some grades of series connection.
Described metal-oxide-semiconductor adopts LVT type or Native type metal-oxide-semiconductor.
The elementary cell of the described Dickson of containing structure is that half diode, half metal-oxide-semiconductor structure, pure NMOS tubular construction, pure PMOS tubular construction or half NMOS manage half PMOS tubular construction.
Beneficial effect of the present invention is, because the electrology characteristic of Schottky diode, cause efficient to increase with input power and obviously increase (being that consistency is poor), behind the metal-oxide-semiconductor that the consistency that helps the introducing electrology characteristic improves, because the grid voltage of metal-oxide-semiconductor is controlled, improve grid voltage and be equivalent to provide a positive bias voltage, can improve output voltage thus, promptly improved power output.
[description of drawings]
Fig. 1 is the principle schematic of radio-frequency (RF) energy charge pump of the present invention.
[embodiment]
Below in conjunction with embodiment and with reference to accompanying drawing the present invention is further described.
As shown in Figure 1, it is a radio-frequency (RF) energy charge pump in the UHF passive electronic label, its radiofrequency signal that is used for receiving is converted to direct current output, described radio-frequency (RF) energy charge pump comprises: radio-frequency (RF) energy input 10 and dc output end 60, described radio-frequency (RF) energy input 10 received RF energy, described dc output end 40 is coupled on the external circuit; The elementary cell that contains the Dickson structure, it adopts the diode in the alternative respectively Dickson structure of metal-oxide- semiconductor 20,30,40,50; And control end, link to each other with the grid of above-mentioned metal-oxide-semiconductor, be used to adjust the height of the grid voltage of above-mentioned metal-oxide-semiconductor.In this embodiment, the elementary cell that contains the Dickson structure is a two-stage series connection.The operation principle of radio-frequency (RF) energy charge pump of the present invention is as follows:
When radio frequency is imported positive half cycle, V
RFFor just, V
X1Increase V thereupon
X2With V
X1Increase and increase.Work as V
X2＞V
X3+ V
Th, V
X1＞V
X3The time, energy is by C3, and metal-oxide-semiconductor 50 flows to capacitor C 5.
During radio frequency input negative half period, V
RFFor negative, V
X1Diminish V thereupon
X0With V
X1Reduce and reduce.Work as V
X1＜0 o'clock, energy flowed to capacitor C 3 by metal-oxide-semiconductor 30 from ground.
Bias voltage V
X0, V
X2: when initial, because
Low, the load consumption energy of nodes X 3 is little, energy storage in capacitor C 5,
Raise.When positive half cycle, with
Rising, the required V of metal-oxide-semiconductor 50 forward conductions (stream for forward) from left to right
X1, V
X2Raise, promptly
Raise.When negative half period, with
Rising, for overcoming the threshold value of metal-oxide-semiconductor 30,
Raise.With
Rising,
Raise, from nodes X 0, the electric charge that the parasitic capacitance between the X1 flows to capacitor C 2 and metal-oxide-semiconductor 20 more multithread is gone into metal-oxide-semiconductor 20, and final, the electric charge that flows in the one-period all flows into metal-oxide-semiconductor 20,
Reach equilibrium valve.In like manner,
Finally reach an equilibrium valve.Be equivalent to add a positive bias voltage, improved to metal-oxide-semiconductor 30 and metal-oxide-semiconductor 50
Promptly improved efficient.
The current formula of diode and metal-oxide-semiconductor:
When adopting diode to make single-way switch, during forward conduction, electric current changes, bias voltage V
BEChange little.When radio-frequency (RF) input power increased, the electric current that flows through diode increased, but bias voltage V
BEChange little.And the amplitude of oscillation of radio-frequency input signals increases, and effectively the energy that utilizes improves, and promptly efficient improves.
When adopting metal-oxide-semiconductor to make single-way switch, during forward conduction, electric current changes, bias voltage V
GSChange (than diode biasing V thereupon
BEChange big).When radio-frequency (RF) input power increased, the electric current that flows through diode increased bias voltage V
GSIncrease.Bias voltage V
GSThe increase amplitude of oscillation of having offset radio-frequency input signals to a certain extent increase.The efficiency change ratio is little when using diode.
In other embodiments, the elementary cell that contains the Dickson structure can be plural serial stage, metal-oxide-semiconductor can adopt LVT type or Native type metal-oxide-semiconductor, and the elementary cell that contains the Dickson structure can adopt half diode, half metal-oxide-semiconductor structure, pure NMOS tubular construction, pure PMOS tubular construction or half NMOS to manage half PMOS tubular construction.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, without departing from the inventive concept of the premise; can also make some improvements and modifications, these improvements and modifications also should be considered within the scope of protection of the present invention.
Claims (8)
1. radio-frequency (RF) energy charge pump, the radiofrequency signal that is used for receiving are converted to direct current output, it is characterized in that described radio-frequency (RF) energy charge pump comprises:
Radio-frequency (RF) energy input and dc output end, described radio-frequency (RF) energy input received RF energy, described dc output end is coupled on the external circuit;
The elementary cell that contains the Dickson structure, it adopts the diode in the alternative or partly alternative Dickson structure of metal-oxide-semiconductor; And
Control end links to each other with the grid of described metal-oxide-semiconductor, is used to adjust the height of the grid voltage of described metal-oxide-semiconductor.
2. radio-frequency (RF) energy charge pump according to claim 1 is characterized in that, the elementary cell of the described Dickson of containing structure is some grades of series connection.
3. radio-frequency (RF) energy charge pump according to claim 1 is characterized in that, described metal-oxide-semiconductor adopts LVT type or Native type metal-oxide-semiconductor.
4. radio-frequency (RF) energy charge pump according to claim 1 is characterized in that, the elementary cell of the described Dickson of containing structure is that half diode, half metal-oxide-semiconductor structure, pure NMOS tubular construction, pure PMOS tubular construction or half NMOS manage half PMOS tubular construction.
5. a ultra-high-frequency passive electronic tag is characterized in that, this electronic tag provides energy by the radio-frequency (RF) energy charge pump, and described radio-frequency (RF) energy charge pump comprises:
Radio-frequency (RF) energy input and dc output end, described radio-frequency (RF) energy input received RF energy, described dc output end is coupled on the external circuit;
The elementary cell that contains the Dickson structure, it adopts the diode in the alternative or partly alternative Dickson structure of metal-oxide-semiconductor; And
Control end links to each other with the grid of described metal-oxide-semiconductor, is used to adjust the height of the grid voltage of described metal-oxide-semiconductor.
6. ultra-high-frequency passive electronic tag according to claim 5 is characterized in that, the elementary cell of the described Dickson of containing structure is some grades of series connection.
7. ultra-high-frequency passive electronic tag according to claim 5 is characterized in that, described metal-oxide-semiconductor adopts LVT type or Native type metal-oxide-semiconductor.
8. ultra-high-frequency passive electronic tag according to claim 5 is characterized in that, the elementary cell of the described Dickson of containing structure is that half diode, half metal-oxide-semiconductor structure, pure NMOS tubular construction, pure PMOS tubular construction or half NMOS manage half PMOS tubular construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101514305A CN102237787A (en) | 2010-04-20 | 2010-04-20 | RF (radio frequency) energy charge pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101514305A CN102237787A (en) | 2010-04-20 | 2010-04-20 | RF (radio frequency) energy charge pump |
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| Publication Number | Publication Date |
|---|---|
| CN102237787A true CN102237787A (en) | 2011-11-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101514305A Pending CN102237787A (en) | 2010-04-20 | 2010-04-20 | RF (radio frequency) energy charge pump |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595385A (en) * | 2013-11-25 | 2014-02-19 | 中国科学院微电子研究所 | Radio frequency switching circuit of III-V group MOSFET device |
| CN104811034A (en) * | 2015-05-29 | 2015-07-29 | 聚辰半导体(上海)有限公司 | Simple charge pump circuit suitable for low voltage operation |
| CN106372711A (en) * | 2016-08-31 | 2017-02-01 | 爱康普科技（大连）有限公司 | Radio frequency power supply circuit and ultrahigh frequency passive electronic tag |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202019298U (en) * | 2010-12-17 | 2011-10-26 | 数伦计算机技术（上海）有限公司 | Radio frequency energy charge pump and power-free electronic tag applying same |
-
2010
- 2010-04-20 CN CN2010101514305A patent/CN102237787A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202019298U (en) * | 2010-12-17 | 2011-10-26 | 数伦计算机技术（上海）有限公司 | Radio frequency energy charge pump and power-free electronic tag applying same |
Non-Patent Citations (3)
| Title |
|---|
| 刘楷等: "一个精确时钟驱动的Dickson倍压电荷泵电路", 《微电子学》 * |
| 姚远等: "射频能量AC/DC电荷泵的MOS实现研究", 《物理学报》 * |
| 徐国鑫等: "超高频无源电子标签芯片的模拟电路设计", 《中兴通讯技术》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595385A (en) * | 2013-11-25 | 2014-02-19 | 中国科学院微电子研究所 | Radio frequency switching circuit of III-V group MOSFET device |
| CN104811034A (en) * | 2015-05-29 | 2015-07-29 | 聚辰半导体(上海)有限公司 | Simple charge pump circuit suitable for low voltage operation |
| CN104811034B (en) * | 2015-05-29 | 2017-07-11 | 聚辰半导体(上海)有限公司 | It is adapted to the simple charge pump circuit of low voltage operating |
| CN106372711A (en) * | 2016-08-31 | 2017-02-01 | 爱康普科技（大连）有限公司 | Radio frequency power supply circuit and ultrahigh frequency passive electronic tag |
| CN106372711B (en) * | 2016-08-31 | 2024-03-29 | 爱康普科技（大连）有限公司 | Radio frequency power supply circuit and ultrahigh frequency passive electronic tag |
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Application publication date: 20111109 |