CN102237493A - Method for preparing gate dielectric material during manufacturing of organic thin film transistor (OTFT) - Google Patents
Method for preparing gate dielectric material during manufacturing of organic thin film transistor (OTFT) Download PDFInfo
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- CN102237493A CN102237493A CN2011101710165A CN201110171016A CN102237493A CN 102237493 A CN102237493 A CN 102237493A CN 2011101710165 A CN2011101710165 A CN 2011101710165A CN 201110171016 A CN201110171016 A CN 201110171016A CN 102237493 A CN102237493 A CN 102237493A
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Abstract
The invention discloses a method for preparing a gate dielectric material during the manufacturing of an organic thin film transistor (OTFT). The method aims to solve the technical problems that the manufacturing of the OTFT is influenced by damage to a plastic substrate during the deposition of the gate dielectric material in the process of preparation of the OTFT. The method comprises the following steps of: 1, placing a lanthanum oxide (La2O3), a barium oxide (BaO) and a manganese oxide (MnO) in which a molar ratio of La to Ba to Mn is 1:1:1 into a beaker, and oxidizing to obtain a poly-oxide LaBaMnO3; 2, dissolving by using nitric acid with the purity of 99.9 percent, heating to completely dissolve all oxides, and keeping the temperature within 100 DEG C; 3, heating, and adding citric acid in which the molar ratio of the LaBaMnO3 to the citric acid is 1:3 to prepare liquid glue which contains the LaBaMnO3; 4, spinning a glue body of the prepared liquid glue which contains the LaBaMnO3 on the plastic substrate; and 5, performing heat treatment on the spun plastic substrate, placing into a vacuum oven, heating up to 200 DEG C, and performing heat preservation for 3 hours at the temperature of 200 DEG C to obtain a LaBaMnO3 gate dielectric material which is 200 nm thick.
Description
Technical field
The present invention relates to a kind of semiconductor technology, the preparation method of the gate dielectric material during particularly a kind of OTFT is made.
Background technology
At present, OTFT (OTFT) is to realize the best solution of low-cost large-area soft drive circuit, but it is also relatively more difficult at present to form high-quality gate insulation material on flexible substrate.This mainly is because in the general plastics flexible substrate that adopts, and the temperature tolerance of plastics intersects, and the deformation of temperature rising frosting obviously loses the substrate function gradually.And the more gate dielectric material of current employing such as silica, silicon nitride etc. are in the preparation, the problem of substrate all will surpass 400 ℃, and this temperature has surpassed the softening temperature of a lot of plastic, in the process of preparation OTFT device, cause damage to influence the making of device to plastic in the time of because of the deposit gate dielectric material.
Summary of the invention
The preparation method who the purpose of this invention is to provide the gate dielectric material in a kind of OTFT manufacturing, the technical problem that solves is to have avoided causing damage to influence the making of device to plastic in the time of because of the deposit gate dielectric material in the process of preparation OTFT device.
The present invention is by the following technical solutions: the preparation method of the gate dielectric material during a kind of OTFT is made, may further comprise the steps: the mol ratio that, will contain La, Ba, Mn is 1: 1: 1 La
2O
3, BaO, MnO place beaker, oxidation obtains multivariant oxide LaBaMnO
3Two, be 99.9% nitric acid dissolve with purity, be heated to all oxides and all dissolve that temperature remains in 100 ℃; Three, LaBaMnO is added in the heating back
3With the mol ratio of citric acid is to be prepared into behind 1: 3 the citric acid to comprise LaBaMnO
3The liquid glue; What four, will prepare comprises LaBaMnO
3The colloid of liquid glue be spin-coated on the plastic; Five, the plastic after the spin coating is heat-treated, place to be heated to 200 ℃ in the vacuum drying oven, and insulation obtained the LaBaMnO that thickness is 200nm in 3 hours under 200 ℃
3Gate dielectric material.
LaBaMnO of the present invention
3The colloid of liquid glue be to be spin-coated on the plastic under 3000 revolutions per seconds the speed at rotating speed.
The present invention compared with prior art, adopt the processing technology of low temperature gate dielectric material, on the flexible plastic substrate, obtain the multivariant oxide gate insulation material of high dielectric constant by low temperature process technology, solve the characteristics of the high temperature resistant difference of plastic, avoided in the process of preparation OTFT device, causing damage to influence the making of device to plastic in the time of because of the deposit gate dielectric material, be not only applicable to flexible substrate, other substrates also are suitable for as silicon substrate commonly used.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further detail.
The preparation method of the gate dielectric material during a kind of OTFT of the present invention is made may further comprise the steps: 1: 1: 1 the La of mol ratio that, will contain La, Ba, Mn
2O
3, BaO, MnO place beaker, oxidation obtains multivariant oxide LaBaMnO
3Two, be 99.9% nitric acid dissolve, be heated to all oxides and all dissolve that with purity temperature remains in 100 ℃; Three, LaBaMnO is added in the heating back
3Comprise LaBaMnO with being prepared into behind 1: 3 the citric acid of mol ratio of citric acid
3The liquid glue; What four, will prepare comprises LaBaMnO
3The colloid of liquid glue be that 3000 revolutions per seconds speed is spin-coated on the plastic at rotating speed; Five, the plastic after the spin coating is heat-treated, place to be heated to 200 ℃ in the vacuum drying oven, and insulation obtained the LaBaMnO that thickness is 200nm in 3 hours under 200 ℃
3Gate dielectric material.
In traditional silicon technology,, generally be the gate insulation medium of the thick silica in the 200nm left and right sides that forms of the autoxidation by silicon substrate as device for performance and the surface roughness that guarantees the gate insulation material.Though this technology is simple, the quality of the gate insulation layer material of preparation is also relatively good, and the preparation temperature height is not wanted particular substrate material-silicon yet.Therefore, for OTFT, as the OTFT device of flexibility demonstration or soft drive purposes, the preparation of the gate insulation material on the flexible substrate just seems more important especially.The dielectric constant of considering gate dielectric material is big more, and the threshold voltage of OTFT device is low more relation just, adopts low temperature process technology, and the dielectric material of preparing high-k is just significant.And in the current dielectric material, silica, the dielectric constant of silicon nitride are not high, and the dielectric constant of multivariant oxide and insulation property are all more satisfactory.Multivariant oxide is as the material LaBaMnO of perovskite structure
3, not only have excellent dielectric properties and insulation property, also have the feasibility of liquid phase low temperature process.The present invention is not only applicable to flexible substrate, and other substrates also are suitable for as silicon substrate commonly used.By this method, widened the manufacturing process of OTFT gate dielectric material, also widened the processing environment of OTFT device, make complete organically flexible circuit and flexible the demonstration become possibility.
Claims (2)
1. the preparation method of the gate dielectric material during an OTFT is made, may further comprise the steps: the mol ratio that, will contain La, Ba, Mn is 1: 1: 1 La
2O
3, BaO, MnO place beaker, oxidation obtains multivariant oxide LaBaMnO
3Two, be 99.9% nitric acid dissolve with purity, be heated to all oxides and all dissolve that temperature remains in 100 ℃; Three, LaBaMnO is added in the heating back
3With the mol ratio of citric acid is to be prepared into behind 1: 3 the citric acid to comprise LaBaMnO
3The liquid glue; What four, will prepare comprises LaBaMnO
3The colloid of liquid glue be spin-coated on the plastic; Five, the plastic after the spin coating is heat-treated, place to be heated to 200 ℃ in the vacuum drying oven, and insulation obtained the LaBaMnO that thickness is 200nm in 3 hours under 200 ℃
3Gate dielectric material.
2. the preparation method of the gate dielectric material during OTFT according to claim 1 is made is characterized in that: described LaBaMnO
3The colloid of liquid glue be to be spin-coated on the plastic under 3000 revolutions per seconds the speed at rotating speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101710165A CN102237493A (en) | 2011-06-23 | 2011-06-23 | Method for preparing gate dielectric material during manufacturing of organic thin film transistor (OTFT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101710165A CN102237493A (en) | 2011-06-23 | 2011-06-23 | Method for preparing gate dielectric material during manufacturing of organic thin film transistor (OTFT) |
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| CN102237493A true CN102237493A (en) | 2011-11-09 |
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| CN2011101710165A Pending CN102237493A (en) | 2011-06-23 | 2011-06-23 | Method for preparing gate dielectric material during manufacturing of organic thin film transistor (OTFT) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106030823A (en) * | 2014-03-07 | 2016-10-12 | 富士胶片株式会社 | Thin-film transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030020068A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Structure and method for integrating compound semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same |
| CN1869278A (en) * | 2006-05-26 | 2006-11-29 | 北京工业大学 | Method for raising property of lanthanum barium manganese oxide film by laser irradiation |
-
2011
- 2011-06-23 CN CN2011101710165A patent/CN102237493A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030020068A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Structure and method for integrating compound semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same |
| CN1869278A (en) * | 2006-05-26 | 2006-11-29 | 北京工业大学 | Method for raising property of lanthanum barium manganese oxide film by laser irradiation |
Non-Patent Citations (1)
| Title |
|---|
| 魏楸桐等: "《溶胶凝胶-燃烧法合成La0.7Sr_0.3MnO3阴极材料及其性能》", 《电源技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106030823A (en) * | 2014-03-07 | 2016-10-12 | 富士胶片株式会社 | Thin-film transistor |
| CN106030823B (en) * | 2014-03-07 | 2019-02-15 | 富士胶片株式会社 | Thin film transistor (TFT) |
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Application publication date: 20111109 |