CN102235852A - Method for measuring wear rate - Google Patents

Method for measuring wear rate Download PDF

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Publication number
CN102235852A
CN102235852A CN2011100791790A CN201110079179A CN102235852A CN 102235852 A CN102235852 A CN 102235852A CN 2011100791790 A CN2011100791790 A CN 2011100791790A CN 201110079179 A CN201110079179 A CN 201110079179A CN 102235852 A CN102235852 A CN 102235852A
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consumptive material
mentioned
face
consumption
optical path
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CN102235852B (en
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松土龙夫
舆水地盐
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02019—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different points on same face of object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • G01B9/02028—Two or more reference or object arms in one interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G01B9/0207—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer
    • G01B9/02071—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer by measuring path difference independently from interferometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a method for measuring the wear rate in a desired time. The wear rate measurement method includes thermally coupling a focus ring (25) having a top surface (25a) and a bottom surface (25b) with a reference piece having a bottom surface facing a susceptor (12) and a top surface (57a) facing the focus ring (25); measuring a first optical path length of a low-coherence light beam that travels forward and backward within the focus ring by irradiating the low-coherence light beam to the focus ring orthogonally to the top surface (57a) and the bottom surface (57b) thereof; measuring a second optical path length of a low-coherence light beam that travels forward and backward within the reference piece (57) by irradiating the low-coherence light beam to the reference piece orthogonally to the top surface (25a) and the bottom surface (25b) thereof; and calculating a wear rate of the focus ring based on a ratio between the first optical path length and the second optical path length.

Description

Consumption measuring method
Technical field
The present invention relates to the consumption measuring method of the consumptive material of thermal expansion.
Background technology
In the substrate board treatment of the plasma that produces in using process chamber to the plasma treatment of implementing regulation as the wafer of substrate, the member that is configured in the process chamber is consumed by plasma.Especially and since surround the wafer configuration, be exposed in the higher plasma of density by the focusing ring (focus ring) that forms with this wafer identical materials, consumption is big.When focusing ring consumed, the distribution of the plasma on the wafer changed, thereby monitored the consumption of focusing ring, when consumption surpasses ormal weight, needed to change focusing ring.
In the past, the consumption of focusing ring takes out focusing ring in the process chamber and in the process chamber external pelivimetry, but for focusing ring is taken out in process chamber, need make in the process chamber to atmosphere opening, after putting back to the focusing ring after measured in the process chamber, need the time to vacuumizing in the process chamber, its result causes the significantly reduction of the running rate of substrate board treatment.
Therefore, the applicant has proposed following consumption measuring method: the lower surface of the focusing ring in process chamber irradiation low-coherent light is measured the thickness of focusing ring, calculates the variable quantity of thickness from measured thickness, promptly, the consumption of focusing ring (for example, with reference to patent documentation 1).In the method, based on from the low-coherent light of the lower surface of focusing ring reflection with reference to interference of light, and from the low-coherent light of the upper surface reflection of focusing ring with reference to interference of light, that calculates low-coherent light comes and goes the optical path length that sees through focusing ring along thickness direction, calculate the thickness of focusing ring from this optical path length, and then measure the consumption of focusing ring.
When using this method, focusing ring need not be taken out consumption in the process chamber, thereby can prevent the significantly reduction of the running rate of substrate board treatment with regard to this focusing ring of energy measurement.
[patent documentation 1] TOHKEMY 2008-227063 communique
But focusing ring is made of silicon, the general and correspondingly thermal expansion of temperature of this silicon, and because variations in refractive index, when owing to plasma treatment the temperature of focusing ring being risen, the optical path length of low-coherent light is elongated.Therefore, during the temperature variation of focusing ring, in the method for the interference of using low-coherent light, can not measure the consumption of focusing ring exactly.Thus, in the method, only be under the situation of temperature of regulation, just the consumption of energy measurement focusing ring in the temperature of focusing ring.For example, when only limiting to substrate board treatment idle, allow to carry out the measurement of the consumption of focusing ring.Therefore, existence can be measured the limited problem of chance of the consumption of focusing ring.
Summary of the invention
The object of the present invention is to provide the consumption measuring method that to measure the consumption of consumptive material on desired opportunity.
For achieving the above object, technical scheme 1 described consumption measuring method is the consumption measuring method of following consumptive material, this consumptive material has and is parallel to each other, being exposed to consumptive material in the environment that makes consumptive material consumption consumes face and is exposed to the consumptive material on-consumable face that does not make in the environment that above-mentioned consumptive material consumes, this consumption measuring method is characterised in that, have by the non-consumptive material that constitutes with above-mentioned consumptive material identical materials and to be parallel to each other, be exposed to the 1st non-consumptive material on-consumable face and the 2nd non-consumptive material on-consumable face in the environment that does not make this non-consumptive material consumption, and with above-mentioned non-consumptive material and above-mentioned consumptive material thermal coupling, vertically shine low-coherent light with above-mentioned consumptive material consumption face and above-mentioned consumptive material on-consumable face to above-mentioned consumptive material, reception consumes the 1st optical path length that comes and goes along thickness direction of the reflected light of above-mentioned low-coherent light of face and above-mentioned consumptive material on-consumable face and the above-mentioned low-coherent light of instrumentation in above-mentioned consumptive material from above-mentioned consumptive material, vertically shine low-coherent light with the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face to above-mentioned non-consumptive material, reception is from the 2nd optical path length that comes and goes in above-mentioned non-consumptive material along thickness direction of the reflected light of the low-coherent light of the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face and the above-mentioned low-coherent light of instrumentation, based on the ratio of above-mentioned the 1st optical path length and above-mentioned the 2nd optical path length, calculate the consumption of above-mentioned consumptive material.
Technical scheme 2 described consumption measuring methods is characterized in that according to technical scheme 1 described consumption measuring method, and above-mentioned the 1st optical path length is being made as L A, above-mentioned the 2nd optical path length is made as L B, above-mentioned consumptive material original depth be made as d AO, above-mentioned non-consumptive material original depth be made as d BO, above-mentioned consumptive material consumption when being made as δ, the consumption of above-mentioned consumptive material is by δ=d AO-d BO* L A/ L BExpression.
Technical scheme 3 described consumption measuring methods is characterized in that according to technical scheme 1 or 2 described consumption measuring methods, respectively to above-mentioned consumptive material and above-mentioned non-consumptive material irradiation low-coherent light.
Technical scheme 4 described consumption measuring methods are according to technical scheme 1 or 2 described consumption measuring methods, it is characterized in that, consuming face, above-mentioned consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face with above-mentioned consumptive material is parallel to each other and is positioned at mode on the same axis, dispose above-mentioned consumptive material and above-mentioned non-consumptive material, consume face, above-mentioned consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face vertically to above-mentioned consumptive material and above-mentioned non-consumptive material irradiation low-coherent light with above-mentioned consumptive material.
Technical scheme 5 described consumption measuring methods are according to each described consumption measuring method in the technical scheme 1 to 4, it is characterized in that above-mentioned consumptive material is to be configured in to use plasma to circular focusing ring in the process chamber of the substrate board treatment of substrate enforcement processing or discoideus battery lead plate.
For achieving the above object, technical scheme 6 described consumption measuring methods are the 1st following consumptive material and the consumption measuring method of the 2nd consumptive material, the 1st consumptive material has and is parallel to each other, being exposed to the 1st consumptive material in the environment that makes the 1st consumptive material consumption consumes face and is exposed to the 1st consumptive material on-consumable face that does not make in the environment that above-mentioned the 1st consumptive material consumes, the 2nd consumptive material has and is parallel to each other, being exposed to the 2nd consumptive material in the environment that makes the 2nd consumptive material consumption consumes face and is exposed to the 2nd consumptive material on-consumable face that does not make in the environment that above-mentioned the 2nd consumptive material consumes, this consumption measuring method is characterised in that, consume face with above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes face and above-mentioned the 2nd consumptive material on-consumable face and is parallel to each other and is positioned at mode on the same axis, dispose above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material, have by the 1st non-consumptive material that constitutes with above-mentioned the 1st consumptive material identical materials and to be parallel to each other, be exposed to the 1st non-consumptive material on-consumable face and the 2nd non-consumptive material on-consumable face in the environment that does not make the 1st non-consumptive material consumption, and with the above-mentioned the 1st non-consumptive material and above-mentioned the 1st consumptive material thermal coupling, have by the 2nd non-consumptive material that constitutes with above-mentioned the 2nd consumptive material identical materials and to be parallel to each other, be exposed to the 3rd non-consumptive material on-consumable face and the 4th non-consumptive material on-consumable face in the environment that does not make the 2nd non-consumptive material consumption, and with the above-mentioned the 2nd non-consumptive material and above-mentioned the 2nd consumptive material thermal coupling, with the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face are parallel to each other and are positioned at mode on the same axis, dispose the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material, consume face with above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes face and above-mentioned the 2nd consumptive material on-consumable face vertically shines low-coherent light to above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material, reception consumes face from above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes the reflected light of the above-mentioned low-coherent light of face and above-mentioned the 2nd consumptive material on-consumable face, and the 1st optical path length that in above-mentioned the 1st consumptive material, comes and goes along thickness direction of the above-mentioned low-coherent light of instrumentation, and the 2nd optical path length that in above-mentioned the 2nd consumptive material, comes and goes along thickness direction of above-mentioned low-coherent light, with the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face are vertically to the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material irradiation low-coherent light, reception is from the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the reflected light of the low-coherent light of the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face, and the 3rd optical path length that in the above-mentioned the 1st non-consumptive material, comes and goes along thickness direction of the above-mentioned low-coherent light of instrumentation, and the 4th optical path length that in the above-mentioned the 2nd non-consumptive material, comes and goes along thickness direction of above-mentioned low-coherent light, ratio based on above-mentioned the 1st optical path length and above-mentioned the 3rd optical path length, calculate the consumption of above-mentioned the 1st consumptive material, and, calculate the consumption of above-mentioned the 2nd consumptive material based on the ratio of above-mentioned the 2nd optical path length and above-mentioned the 4th optical path length.
Technical scheme 7 described consumption measuring methods is characterized in that according to the consumption measuring method of technical scheme 6 records, above-mentioned the 1st optical path length are being made as L A, above-mentioned the 3rd optical path length is made as L B, above-mentioned the 1st consumptive material original depth be made as d AO, above-mentioned the 1st non-consumptive material original depth be made as d BO, above-mentioned the 1st consumptive material consumption be made as δ AThe time, the consumption of above-mentioned the 1st consumptive material is by δ A=d AO-d BO* L A/ L BExpression, and above-mentioned the 2nd optical path length is made as L C, above-mentioned the 4th optical path length is made as L D, above-mentioned the 2nd consumptive material original depth be made as d CO, above-mentioned the 2nd non-consumptive material original depth be made as d DO, above-mentioned the 2nd consumptive material consumption be made as δ CThe time, the consumption of above-mentioned the 2nd consumptive material is by δ A=d CO-d DO* L C/ L DExpression.
Technical scheme 8 described consumption measuring methods are according to technical scheme 6 or 7 described consumption measuring methods, it is characterized in that, respectively to the group of above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material and group's irradiation low-coherent light of the above-mentioned the 1st non-consumptive material and above-mentioned the 2nd non-consumptive material.
Technical scheme 9 described consumption measuring methods are according to technical scheme 6 or 7 described consumption measuring methods, it is characterized in that, consume face with above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes face, above-mentioned the 2nd consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face are parallel to each other and are positioned at mode on the same axis, dispose above-mentioned the 1st consumptive material, above-mentioned the 2nd consumptive material, the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material consume face with above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes face, above-mentioned the 2nd consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face are vertically to above-mentioned the 1st consumptive material, above-mentioned the 2nd consumptive material, the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material irradiation low-coherent light.
Technical scheme 10 described consumption measuring methods are according to each described consumption measuring method in the technical scheme 6 to 9, it is characterized in that above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material are to be configured in to use plasma to circular focusing ring in the process chamber of the substrate board treatment of substrate enforcement processing or discoideus battery lead plate.
According to the 1st mode of the present invention because non-consumptive material is by constituting with the consumptive material identical materials, and with the consumptive material thermal coupling, so the coefficient of thermal expansion of non-consumptive material is identical with the coefficient of thermal expansion of consumptive material, the temperature of non-consumptive material is identical with the temperature of consumptive material.Therefore, the extensibility that is caused by temperature of the 2nd optical path length of the low-coherent light in the extensibility that is caused by temperature of the 1st optical path length of the low-coherent light in the consumptive material and the non-consumptive material is identical.Its result by using the ratio of the 1st optical path length and the 2nd optical path length, can eliminate the influence that is brought by temperature of consumptive material in the measurement of the consumption of consumptive material, and then can promptly, measure the consumption of consumptive material on desired opportunity under temperature arbitrarily.
According to the 2nd mode of the present invention, because the 1st non-consumptive material is by constituting with the 1st consumptive material identical materials, and with the 1st consumptive material thermal coupling, so the coefficient of thermal expansion of the 1st non-consumptive material is identical with the coefficient of thermal expansion of the 1st consumptive material, the temperature of the 1st non-consumptive material is identical with the temperature of the 1st consumptive material.Therefore, the extensibility that is caused by temperature of the 3rd optical path length of the low-coherent light in the extensibility that is caused by temperature of the 1st optical path length of the low-coherent light in the 1st consumptive material and the 1st non-consumptive material is identical.In addition because the 2nd non-consumptive material is by constituting with the 2nd consumptive material identical materials, and with the 2nd consumptive material thermal coupling, so the coefficient of thermal expansion of the 2nd non-consumptive material is identical with the coefficient of thermal expansion of the 2nd consumptive material, the temperature of the 2nd non-consumptive material is identical with the temperature of the 2nd consumptive material.Therefore, the extensibility that is caused by temperature of the 4th optical path length of the low-coherent light in the extensibility that is caused by temperature of the 2nd optical path length of the low-coherent light in the 2nd consumptive material and the 2nd non-consumptive material is identical.Its result, by using the ratio of the 1st optical path length and the 3rd optical path length, can in the measurement of the consumption of the 1st consumptive material, eliminate the Temperature Influence of the 1st consumptive material, and by using the ratio of the 2nd optical path length and the 4th optical path length, can be in the measurement of the consumption of the 2nd consumptive material the influence that brings by temperature of elimination the 2nd consumptive material.Thus, can under temperature arbitrarily, promptly, measure the consumption of the 1st consumptive material and the consumption of the 2nd consumptive material on desired opportunity.
And, according to the 2nd mode of the present invention, because the 1st consumptive material consumption face, the 1st consumptive material on-consumable face, the 2nd consumptive material consumption face and the 2nd consumptive material on-consumable face are parallel to each other and are positioned on the same axis, so consume the reflected light of face, the 1st consumptive material on-consumable face, the 2nd consumptive material consumption face and the 2nd consumptive material on-consumable face on same axis from the 1st consumptive material, therefore, low-coherent light of irradiation just can obtain the required reflected light from the 1st consumptive material and the 2nd consumptive material.In addition, because the 1st non-consumptive material on-consumable face, the 2nd non-consumptive material on-consumable face, the 3rd non-consumptive material on-consumable face and the 4th non-consumptive material on-consumable face are parallel to each other and are positioned on the same axis, thus from the reflected light of the 1st non-consumptive material on-consumable face, the 2nd non-consumptive material on-consumable face, the 3rd non-consumptive material on-consumable face and the 4th non-consumptive material on-consumable face on same axis.Therefore, low-coherent light of irradiation just can obtain the required reflected light from the 1st non-consumptive material and the 2nd consumptive material.Its result can reduce the quantity of the irradiation unit of low-coherent light, and then can simplify the structure of the consumption measurement mechanism that uses low-coherent light.
Description of drawings
Fig. 1 is the figure of structure of substrate board treatment that roughly represents to carry out the consumption measuring method of the 1st embodiment of the present invention.
Fig. 2 is the block diagram of the structure of the member measurer for thickness that substrate board treatment had of presentation graphs 1 roughly.
Fig. 3 is the figure of thickness measure action that is used for the low-coherent light optical system of key diagram 2.
Fig. 4 reflected light that comes Self-focusing ring that to be expression detected by the PD among Fig. 3 and from the chart of the interference waveform between the reflected light of reference mirror, (A) interference waveform that is obtained before the consumption of expression focusing ring, (B) interference waveform that is obtained after the consumption of expression focusing ring.
Fig. 5 represents that roughly consumption measuring method by present embodiment measures the cut-open view of structure of the focusing ring of consumption.
Fig. 6 is the chart of the interference waveform of the low-coherent light that obtains when carrying out the consumption measuring method of present embodiment of expression.
Fig. 7 is the figure of a part of general configuration of variation of the member measurer for thickness of the expression consumption of measuring a plurality of measuring positions by the consumption measuring method of present embodiment, (A) expression the 1st variation, (B) expression the 2nd variation, (C) expression the 3rd variation.
Fig. 8 is the figure of variation of the configuration of the collimating apparatus in the substrate board treatment of presentation graphs 1, (A) expression the 1st variation, (B) expression the 2nd variation, (C) expression the 3rd variation, (D) expression the 4th variation, (E) expression the 5th variation.
Fig. 9 represents that roughly consumption measuring method by the 2nd embodiment of the present invention measures the cut-open view of structure of the focusing ring of consumption.
Figure 10 is the chart of the interference waveform of the low-coherent light that obtains when carrying out the consumption measuring method of present embodiment of expression.
Figure 11 is the figure of a part of general configuration of variation of the member measurer for thickness of the expression consumption of measuring a plurality of measuring positions by the substrate-cleaning method of present embodiment, (A) expression the 1st variation, (B) expression the 2nd variation, (C) expression the 3rd variation, (D) expression the 4th variation.
Figure 12 represents that roughly consumption measuring method by the 3rd embodiment of the present invention measures the cut-open view of structure of the upper electrode plate of consumption.
Figure 13 is the chart of the interference waveform of the low-coherent light that obtains when carrying out the substrate-cleaning method of present embodiment of expression.
Figure 14 is the cut-open view of the structure of the variation of roughly representing the consumption measuring method by the present embodiment upper electrode plate of measuring consumption.
The chart of the interference waveform of the low-coherent light that Figure 15 obtains when being the variation of the expression consumption measuring method of carrying out present embodiment.
Figure 16 represents that roughly consumption measuring method by the 4th embodiment of the present invention measures the cut-open view of the structure of the focusing ring of consumption and upper electrode plate.
Figure 17 is the chart of the interference waveform of the low-coherent light that obtains when carrying out the substrate-cleaning method of present embodiment of expression.
Figure 18 is the cut-open view that the variation of roughly representing the consumption measuring method by present embodiment is measured the structure of the focusing ring of consumption and upper electrode plate.
The chart of the interference waveform of the low-coherent light that Figure 19 obtains when being the variation of the expression consumption measuring method of carrying out present embodiment.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
At first, the substrate board treatment to the consumption measuring method of carrying out the 1st embodiment of the present invention describes.
Fig. 1 is the figure of structure of substrate board treatment that roughly represents to carry out the consumption measuring method of present embodiment.This substrate board treatment is to implementing plasma etch process as the wafer of the semiconductor device by using of substrate (below, abbreviate " wafer " as).
In Fig. 1, substrate board treatment 10 has and is used to accommodate for example chamber 11 of the wafer W of diameter 300mm, disposes the columned pedestal 12 (mounting table) of the wafer W that is used for the mounting semiconductor device by using in this chamber 11.In substrate board treatment 10, form side-exhaustion path 13 by the madial wall of chamber 11 and the side of pedestal 12.Dispose exhaustion plate 14 in the stage casing in this side-exhaustion path 13.
Exhaustion plate 14 is the tabular components with a large amount of through holes, plays a role as the dividing plate that chamber 11 inside is separated into the upper and lower.Be deflated in the top (below, be called " process chamber ") 15 of chamber 11 inside that plate 14 separates and produce plasma as described later like that.In addition, be connected with the gas outlet 17 that is used to discharge the gas in the chamber 11 the bottom of chamber 11 inside (below, be called " discharge air chamber (manifold (manifold)) ") 16.Exhaustion plate 14 is caught or is reflected in the plasma that produces in the process chamber 15 and prevents to leak to manifold 16.
Be connected with TMP (Turbo Molecular Pump) and DP (Dry Pump) (all not shown) on gas outlet 17, these pumps reduce pressure to vacuumizing in the chamber 11.Particularly, DP with in the chamber 11 from atmospheric pressure is decompressed to vacuum state (for example, 1.3 * 10Pa (0.1Torr) is following), TMP and DP are high vacuum state (for example, 1.3 * 10 with being decompressed to the pressure lower than middle vacuum state in the chamber 11 collaboratively -3Pa (1.0 * 10 -5Torr) following).In addition, the pressure in the chamber 11 is by APC valve (not shown) control.
On the pedestal 12 in chamber 11, be connected with the 1st high frequency electric source 18 via the 1st adaptation 19, and be connected with the 2nd high frequency electric source 20 via the 2nd adaptation 21, the 1st high frequency electric source 18 be with lower frequency for example the ion of the 2MHz High frequency power of introducing usefulness be applied to pedestal 12, the 2 high frequency electric sources 20 be with upper frequency for example the plasma of the 60MHz High frequency power that generates usefulness be applied to pedestal 12.Thus, pedestal 12 plays a role as electrode.In addition, the 1st adaptation 19 and the 2nd adaptation 21 reduce High frequency power and make High frequency power become maximum to the efficient that applies that pedestal 12 applies from the reflection of pedestal 12.
Along the outstanding shape of concentric shafts, the mode on this top with the cylinder that surrounds path is formed with step to the cylinder that the top of pedestal 12 is path from the top of the cylinder in big footpath.Dispose the electrostatic chuck 23 that forms by pottery that inside has electrostatic attraction electrode plate 22 on the top of the cylinder of path.On electrostatic attraction electrode plate 22, be connected with direct supply 24, when electrostatic attraction electrode plate 22 applies positive DC voltage, wafer W by the face of electrostatic chuck 23 sides (below, be called " back side ") the generation negative potential, between the back side of electrostatic attraction electrode plate 22 and wafer W, produce potential difference (PD), draw Buick power by Coulomb force or the Johnson who is produced by this potential difference (PD), wafer W is adsorbed and remains on electrostatic chuck 23.
In addition, on the top of pedestal 12, be adsorbed the mode of the wafer W that remains on electrostatic chuck 23 with encirclement, focusing ring 25 (consumptive material) is positioned in the step at the place, top of pedestal 12.Focusing ring 25 is made of silicon (Si).Promptly, because focusing ring 25 is made of semiconductor, the range of distribution of plasma is not only also expanding on the wafer W on this focusing ring 25, thereby the density of the plasma on the circumference of wafer W is maintained the density equal extent of the plasma on the central portion with this wafer W.Thus, guarantee the homogeneity of the plasma etching process processes that applied on whole of wafer W.
Focusing ring 25 is circular members, have the upper surface 25a (consumptive material consumption face) that is exposed to process chamber 15 inside and with the step opposing lower surface 25b (consumptive material on-consumable face) (with reference to Fig. 5 described later) of pedestal 12.Upper surface 25a and lower surface 25b are parallel to each other.
At the top of chamber 11, relatively dispose shower 26 with pedestal 12.Shower 26 has: upper electrode plate 27 (consumptive material); Can be hung in the coldplate 28 on this upper electrode plate 27 removably; Cover the lid 29 of this coldplate 28.Upper electrode plate 27 is made of the discoideus member with a large amount of pores 30 that connect along thickness direction, and is that silicon forms by semiconductor.
Upper electrode plate 27 is discoideus members, has: the upper surface 27a (consumptive material on-consumable face) relative with coldplate 28; Be exposed to the lower surface 27b (consumptive material consumption face) (with reference to Figure 12 described later) of process chamber 15 inside.Upper surface 27a and lower surface 27b are parallel to each other.Be provided with surge chamber 31 in the inside of coldplate 28, this surge chamber 31 is connected with handles gas introduction tube 32.
In substrate board treatment 10, be imported into process chamber 15 inside from handling the processing gas that gas introduction tube 32 supplies with to surge chamber 31 via pore 30, the High frequency power that the processing gas that this is imported into is generated usefulness by the plasma that applies to process chamber 15 inside via pedestal 12 from the 2nd high frequency electric source 20 excites and becomes plasma.Ion in this plasma is utilized the ion that is applied to pedestal 12 by the 1st high frequency electric source 18 and introduces the High frequency power of usefulness and introduce towards wafer W, implements plasma etching process processes to this wafer W.At this moment, the ion in the plasma also arrives the upper surface 25a of focusing ring 25 or the lower surface 27b of upper electrode plate 27, and this upper surface 25a or lower surface 27b are carried out sputter.Its result, focusing ring 25 or upper electrode plate 27 are consumed.
In this substrate board treatment 10,, the member measurer for thickness is set in order to measure the consumption of focusing ring 25.Fig. 2 is the block diagram of the structure of the member measurer for thickness that substrate board treatment had of presentation graphs 1 roughly.
In Fig. 2, member measurer for thickness 33 has: low-coherent light optical system 34, the focusing ring 25 in substrate board treatment 10 are shone low-coherent lights and are received the reflected light of this low-coherent light; Thickness calculating apparatus 35, the reflected light that is received based on this low-coherent light optical system 34 is calculated the thickness of focusing ring 25.So-called low-coherent light is meant, be divided under the situation of the light more than two bundles from the light of a light source irradiation, along with advancing to a distant place, (two bundles of being told are difficult to interfere) light that the wave train of two light that this quilt is told becomes and is difficult to overlap, but be the short light of interference distance (coherent length).
Low-coherent light optical system 34 has: as the SLD (Super Luminescent Diode) 36 of low-coherence light source; The optical fiber heat bonding coupling mechanism that conduct 2 * 2 beam splitters that are connected with this SLD36 play a role (below, only be called " coupling mechanism ") 37; The collimating apparatus 38,39 that is connected with this coupling mechanism 37; The photodetector that is connected with coupling mechanism 37 (PD:Photo Detector) 40 as photo detector; Connect optical fiber 41a, 41b, 41c, 41d between each inscape respectively.
SLD36 be for example with maximum output 1.5mW irradiation centre wavelength be 1.55 μ m or 1.31 μ m, coherent length is the low-coherent light of about 50 μ m.Coupling mechanism 37 will be divided into two bundles from the low-coherent light of SLD36, and these two bundle low-coherent lights that are divided into are sent to collimating apparatus 38,39 via optical fiber 41b, 41c respectively.Collimating apparatus the 38, the 39th, the collimating apparatus that the reflecting surface of the lower surface 25b of the low-coherent light told by coupling mechanism 37 (measuring light 50 described later and with reference to light 51) and focusing ring 25 and reference mirror described later 42 is vertically shone.In addition, PD40 is made of for example Ge photodiode.
Low-coherent light optical system 34 has: the reference mirror 42 that is configured in the place ahead of collimating apparatus 39; Make reference mirror 42 drive platform 44 by servomotor 43 along the reference mirror that the direction of illumination that starts from the low-coherent light of collimating apparatus 39 moves horizontally; Drive the motor driver 45 that this reference mirror drives the servomotor 43 of platform 44; Be connected with PD40 and make amplifier 46 from the output signal amplification of this PD40.Reference mirror 42 is made of corner cube prism with reflecting surface or level crossing.
Collimating apparatus 38 is imbedded the configuration of pedestal 12 ground in the mode relative with the lower surface 25b of focusing ring 25, towards the low-coherent light (measuring light 50 described later) that the lower surface 25b of focusing ring 25 irradiation is told by coupling mechanism 37, receive simultaneously Self-focusing ring 25 low-coherent light reflected light (reflected light 52b described later and reflected light 52a) and be sent to PD40.
The low-coherent light (described later with reference to light 51) that collimating apparatus 39 is told by coupling mechanism 37 towards reference mirror 42 irradiations receives the reflected light (reflected light 54 described later) from the low-coherent light of reference mirror 42 simultaneously and is sent to PD40.
Reference mirror drives platform 44 makes reference mirror 42 move horizontally along direction of arrow A shown in Figure 2, that is, the reflecting surface of reference mirror 42 is always vertically moved horizontally with the irradiates light that comes autocollimator 39.Reference mirror 42 can come and go mobile in the direction of arrow A.In addition, in Fig. 2, for convenience of description, come the irradiates light of autocollimator 39 and do not overlap ground mutually to be described in the mode of deflection respectively with regulation from the reflected light of reference mirror 42, but in fact these light do not have the deflection of regulation, but overlap.Above-mentioned collimating apparatus 38 or laser interferometer 48a described later also are same.
Thickness calculating apparatus 35 has: the PC47 of control thickness calculating apparatus 35 integral body; The motor controller 48 that is used to make the servomotor 43 that reference mirror 42 moves by motor driver 45 control; With the A/D converter 49 that synchronously carries out digital-to-analog conversion from the control signal of laser interferometer 48a.Here, A/D converter 49 in the distance of reference mirror 42 by laser interferometer 48a or linear scale (not shown) exactly under the situation of instrumentation, with synchronously the output signal via the PD40 of amplifier 46 inputs of low-coherent light optical system 34 is carried out the A/D conversion by the displacement control signal corresponding of laser interferometer 48a or linear scale instrumentation, thus, carry out the thickness instrumentation accurately.
Fig. 3 is the figure of thickness measure action that is used for the low-coherent light optical system of key diagram 2.
Low-coherent light optical system 34 is to have utilized the interferometric optical system of low coherence that has Michelson-interferometer structure as essential structure, as shown in Figure 3, be divided into measuring light 50 by the coupling mechanism 37 that plays a role as beam splitter and with reference to light 51 from the low-coherent light of SLD36 irradiation, measuring light 50 is focusing ring 25 irradiations towards the object of thickness measure, shines towards reference mirror 42 with reference to light 51.
To the measuring light 50 of focusing ring 25 irradiation respectively in the lower surface 25b and the upper surface 25a reflection of focusing ring 25, come Self-focusing ring 25 lower surface 25b reflected light 52b and come the reflected light 52a of the upper surface 25a of Self-focusing ring 25 to incide coupling mechanism 37 with same light path 53.In addition, to reference mirror 42 irradiation with reference to light 51 in the reflecting surface reflection, also incide coupling mechanism 37 from the reflected light 54 of this reflecting surface.Here, as above above-mentioned, owing to reference mirror 42 moves horizontally along the direction of illumination with reference to light 51, so low-coherent light optical system 34 can make the optical path length with reference to light 51 and reflected light 54 change.
Make with reference to the optical path length of light 51 and reflected light 54 change and make the optical path length of measuring light 50 and reflected light 52b become with reference to the optical path length of light 51 and reflected light 54 when identical, reflected light 52b and reflected light 54 interfere.In addition, the optical path length of measuring light 50 and reflected light 52a become with reference to the optical path length of light 51 and reflected light 54 when identical, reflected light 52a and reflected light 54 interfere.These interference are detected by PD40.PD40 detects output signal when interfering.
Fig. 4 reflected light that comes Self-focusing ring that to be expression detected by the PD among Fig. 3 and from the chart of the interference waveform between the reflected light of reference mirror, (A) be illustrated in resulting interference waveform before the consumption of focusing ring, (B) be illustrated in resulting interference waveform after the consumption of focusing ring.In addition, the longitudinal axis is represented interference strength, and transverse axis is represented the distance that reference mirror 42 moves horizontally from the regulation basic point (below, only be called " reference mirror displacement ").
Shown in the chart of Fig. 4 (A), when interfering with the reflected light 52b that comes the lower surface 25b of Self-focusing ring 25 from the reflected light 54 of reference mirror 42, for example, detecting with interference position A is the interference waveform 55 at center.In addition, when interfering with the reflected light 52a that comes the upper surface 25a of Self-focusing ring 25 from the reflected light 54 of reference mirror 42, for example, detecting with interference position B is the interference waveform 56 at center.Interference position A is corresponding with the optical path length of measuring light 50 that arrives lower surface 25b and reflected light 52b, interference position B is corresponding with the optical path length of measuring light 50 that arrives upper surface 25a and reflected light 52a, thereby the difference D of interference position A and interference position B and low-coherent light (part of measuring light 50 and reflected light 52a) is corresponding along thickness direction round optical path length in focusing ring 25.The optical path length that comes and goes in focusing ring 25 along thickness direction of low-coherent light is corresponding with the thickness of focusing ring 25, so the difference D of interference position A and interference position B is corresponding with the thickness of focusing ring 25.That is, by detection of reflected light 54 and reflected light 52b and reflected light 54 interference waveform with reflected light 52a, thickness that can instrumentation focusing ring 25.
Here, when focusing ring 25 consumes, the thickness of focusing ring 25 changes, thereby arriving the measuring light 50 of upper surface 25a and the optical path length of reflected light 52a changes, promptly, when focusing ring 25 consumed, the thickness of focusing ring 25 changed, and the interference position B of reflected light 54 and reflected light 52a changes from the interference position B shown in Fig. 4 (A).Specifically, the interference position B shown in Fig. 4 (A) moves to the interference position B ' shown in Fig. 4 (B).Therefore, the consumption of the variable quantity of the difference D of interference position A and interference position B and focusing ring 25 is suitable.Member measurer for thickness 33 is calculated the consumption of focusing ring 25 based on the variable quantity of the difference D of interference position A and interference position B.
Fig. 5 represents that roughly consumption measuring method by present embodiment measures the cut-open view of structure of the focusing ring of consumption.
In Fig. 5, focusing ring 25 has reference plate 57.Reference plate 57 is the tabular members that are made of silicon, and is thinner and little than focusing ring 25, has the upper surface 57a (the 1st non-consumptive material on-consumable face) and the lower surface 57b (the 2nd non-consumptive material on-consumable face) that are parallel to each other.Because reference plate 57 inserts the recess 58 on the lower surface 25b be arranged in focusing ring 25 with interference fit, thus with focusing ring 25 thermal couplings.On the reference plate 57 that is inserted into recess 58, upper surface 57a is exposed to recess 58 inside, and lower surface 57b is relative with the step of pedestal 12.
In the consumption measuring method of present embodiment, vertically shine low-coherent light from the upper surface 25a and the lower surface 25b of collimating apparatus 38 and focusing ring 25, and reception is from the reflected light of the low-coherent light of upper surface 25a and lower surface 25b, and vertically shine low-coherent light from the collimating apparatus 38a that is connected with optical fiber by not shown coupling mechanism and the upper surface 57a and the lower surface 57b of reference plate 57, and receive reflected light from the low-coherent light of upper surface 57a and lower surface 57b from optical fiber 41b branch.
At this moment, observation is during from the reflected light of each face with from the interference waveform between the reflected light 54 of reference mirror 42, as shown in Figure 6, along with reference mirror displacement increases, from the interference waveform 55 of the reflected light of lower surface 25b and reflected light 54, from the interference waveform 56 of the reflected light of upper surface 25a and reflected light 54, detected successively from the interference waveform 59 of the reflected light of lower surface 57b and reflected light 54 with from the reflected light of upper surface 57a and the interference waveform 60 of reflected light 54.Here, the difference D of the position of interference waveform 55 and interference waveform 56 is such corresponding along thickness direction round optical path length in focusing ring 25 with low-coherent light as mentioned above, and corresponding with the thickness of focusing ring 25.In addition, the optical path length that comes and goes in reference plate 57 along thickness direction of the difference E of the position of interference waveform 59 and interference waveform 60 and low-coherent light is corresponding, and corresponding with the thickness of reference plate 57.
When focusing ring 25 consumed, having only consumption face was that the position of upper surface 25a changes, arrive upper surface 25a measuring light 50 optical path length and shorten from the catoptrical optical path length of upper surface 25a.That is, the optical path length that comes and goes in focusing ring 25 along thickness direction of low-coherent light shortens.Its result, interference waveform 56 is approaching to interference waveform 55, and moves to interference waveform 56a.The difference F of the position of interference waveform 56 and interference waveform 56a and the location variation of upper surface 25a are that the consumption of focusing ring 25 is corresponding.
Yet the temperature of focusing ring 25 changes and during thermal expansion, the thickness of focusing ring 25 changes, and the optical path length that comes and goes in focusing ring 25 along thickness direction of low-coherent light just changes.Therefore, under the situation of the consumption of measuring focusing ring 25, need eliminate the influence that thermal expansion produced of focusing ring 25 from the difference F of the position of interference waveform 56 and interference waveform 56a.
The consumption measuring method of present embodiment is under the situation of the consumption of measuring focusing ring 25 therewith accordingly, utilize low-coherent light the optical path length that in focusing ring 25, comes and goes along thickness direction (below, be called " focusing ring 25 in optical path lengths ") ratio of the optical path length that reference plate 57 in, comes and goes along thickness direction of (the 1st optical path length) and low-coherent light (below, be called " reference plate 57 interior optical path lengths ") (the 2nd optical path length).
Specifically, optical path length is made as L in focusing ring 25 A, optical path lengths are made as L in the reference plate 57 B, focusing ring 25 original depth be made as d AO, reference plate 57 original depth be made as d BO, focusing ring 25 thermal expansion the time thickness be made as d AT, reference plate 57 thermal expansion the time thickness be made as d BT, the consumption of the focusing ring 25 interdependent refractive index of temperature that is made as δ, silicon is made as n T, silicon thermal expansivity be made as α T, focusing ring 25 thermal expansion the time temperature when being made as T, optical path lengths and the ratio of reference plate 57 interior optical path lengths are as shown in the formula shown in (A) in the focusing ring 25.
L A/L B＝n Td AT/n Td BT＝n T(d AO-δ)(1+α TT)/n Td BO(1+α TT)...(A)
Here, because reference plate 57 and focusing ring 25 thermal couplings, so the temperature of reference plate 57 is identical with the temperature of focusing ring 25, and owing to reference plate 57 and focusing ring 25 are made of silicon in the same manner, so interdependent refractive index of the temperature of reference plate 57 and thermal expansivity are identical with the interdependent refractive index of temperature and the thermal expansivity of focusing ring 25.That is, in above-mentioned formula (A), cancellation temperature T, the interdependent refractive index n of temperature TAnd thermalexpansioncoefficient TAssociated item, above-mentioned formula (A) can convert following formula (B) to.
L A/L B＝(d AO-δ)/d BO...(B)
Its result, the consumption δ of focusing ring 25 can be by following formula (C) expression of removing with the coefficient of temperature correlation.
δ＝d AO-d BO(L A/L B)...(C)
Thus, measure the original depth d of focusing ring 25 AOAnd the original depth d of reference plate 57 BO, under temperature arbitrarily, as long as measure optical path length L in the focusing ring 25 AAnd optical path length L in the reference plate 57 B, just can calculate the consumption δ of focusing ring 25.
The reason that can transform to above-mentioned formula (C) from above-mentioned formula (A) is that the temperature of reference plate 57 is identical with the temperature of focusing ring 25, and interdependent refractive index of the temperature of reference plate 57 and thermal expansivity are identical with the interdependent refractive index of temperature and the thermal expansivity of focusing ring 25, thereby the extensibility that the Yin Wendu of optical path length produces in the focusing ring 25 is identical with the extensibility that the Yin Wendu of reference plate 57 interior optical path lengths produces, by using the ratio of optical path lengths in focusing ring 25 interior optical path lengths and the reference plate 57, can offset the extensibility that Yin Wendu produces.
In the consumption measuring method of above-mentioned present embodiment, owing to shine low-coherent lights from collimating apparatus 38 and collimating apparatus 38a to focusing ring 25 and reference plate 57 respectively, so as long as upper surface 25a and lower surface 25b are with vertical from the low-coherent light of collimating apparatus 38 irradiations, as long as upper surface 57a and lower surface 57b are with vertical from the low-coherent light of collimating apparatus 38a irradiation.Therefore, do not need to make the combination of upper surface 25a and lower surface 25b and the combined parallel of upper surface 57a and lower surface 57b, can easily carry out the configuration of focusing ring 25 and reference plate 57.
Material that luminous energy sees through for example translucent adhesive or quartz also can be filled in the recess 58 of above-mentioned focusing ring 25 and gap reference plate 57, perhaps for example metal or resin of the impervious material of light, and perhaps what is not filled.But, preferably fill for example thermally conductive silicone rubber of the high material of thermal conductivity.Thus, can make the temperature of reference plate 57 identical reliably with the temperature of focusing ring 25.
In the consumption measuring method of above-mentioned present embodiment, carry out the measurement of consumption at a focusing ring 25, and the measuring position of the consumption of this focusing ring 25 also is a position, but also can use member measurer for thickness 33 to be increased to the measuring position of the consumption of focusing ring 25 a plurality of.Particularly, shown in Fig. 7 (A), on optical fiber 41b, coupling mechanism 61 is set again and will be branched off into multi beam from the measuring light 50 of coupling mechanism 37, except that collimating apparatus 38,38a, collimating apparatus 38b, the 38c corresponding with each measuring light 50 of branch also are set, each collimating apparatus 38,38a, 38b, 38c are configured in a plurality of measuring positions respectively and get final product.Under this situation, adjust optical path length, the reflected light that each collimating apparatus 38,38a, 38b, 38c receive and from the location dislocation of the interference waveform between the reflected light 54 of reference mirror 42 from coupling mechanism 61 to each collimating apparatus 38,38a, 38b, 38c.Thus, can prevent that the interference waveform that produces accordingly with each measuring position is overlapping, and, the consumption of the focusing ring 25 of a plurality of measuring positions can correctly be measured.
As mentioned above, increase under a plurality of situations in the measuring position, the optical path length of adjustment from coupling mechanism 61 to each measuring position, as long as from the reflected light of each measuring position with from the location dislocation of the interference waveform between the reflected light 54 of reference mirror 42, for example, shown in Fig. 7 (B), by with each collimating apparatus 38,38a, 38b, the 38c distribution is arranged on two focusing rings 25, also can measure the consumption of two focusing rings 25 simultaneously, in addition, for example, shown in Fig. 7 (C), prepare each collimating apparatus 38,38a～38g and assignment configuration can be measured the consumption of a plurality of measuring positions at two focusing rings 25 respectively thus simultaneously at two focusing rings 25.
In addition, using member measurer for thickness 33 measuring position to be increased under a plurality of situations, also coupling mechanism 61 can be replaced as multiplexer (not shown), in addition, also can between coupling mechanism 37 and coupling mechanism 61, dispose multiplexer (not shown).
In aforesaid substrate treating apparatus 10, collimating apparatus 38 disposes in the mode of imbedding pedestal 12, but the collocation method of the collimating apparatus 38 in the pedestal 12 is not particularly limited.For example, shown in Fig. 8 (A), also can be with collimating apparatus 38 and the direct relative mode of the lower surface 25b of focusing ring 25, this collimating apparatus 38 is configured on the RF plate 62 of pedestal 12, for example, shown in Fig. 8 (B), also through hole 63 can be set on RF plate 62, see through through hole 63 mode relative with collimating apparatus 38, this collimating apparatus 38 is arranged on the substrate 64 of pedestal 12 with the lower surface 25b of focusing ring 25.
Under situation about collimating apparatus 38 being arranged on the substrate 64, when the air that exists in the space 65 of encirclement RF plate 62 and substrate 64 etc. rocks, the possible multilated of the rectilinear propagation of low-coherent light, low-coherent light decay.Therefore, for example, shown in Fig. 8 (C), also can be in space 65, between collimating apparatus 38 and through hole 63, dispose pipe 66 and low-coherent light is passed through in this pipe 66, thus, low-coherent light 65 can be isolated from the space, and then can prevent to be subjected to the influence of rocking of the air that exists in the space 65 etc.In addition, for example, also can be in space 65, configuration light-transmissive rod 67 between collimating apparatus 38 and through hole 63 and make low-coherent light see through this light-transmissive rod 67 thus, also can 65 be isolated low-coherent light from the space.In addition, light-transmissive rod 67 is made of quartz or sapphire etc.
In addition, collimating apparatus 38 also can be provided with independently of one another with pedestal 12.For example, shown in Fig. 8 (E), also can collimating apparatus 38 be set, under this situation, prism or level crossing are set in pedestal 12 and will get final product to the lower surface 25b of focusing ring 25 guiding from the low-coherent light of collimating apparatus 38 irradiations in the mode of side of irradiation pedestal 12.
Below, the consumption measuring method of the 2nd embodiment of the present invention is described.
Fig. 9 represents that roughly consumption measuring method by present embodiment measures the cut-open view of structure of the focusing ring of consumption.
In Fig. 9, the focusing ring 25c that is made of silicon has reference plate 57, and has the recess 68 that is located in lower surface 25b.This recess 68 top in the drawings has end face 68a (consumptive material on-consumable face), and this end face 68a is parallel with the upper surface 25a of focusing ring 25c.In the present embodiment, reference plate 57 is upper surface 25a, the end face 68a of recess 68, the upper surface 57a of reference plate 57 and the modes that lower surface 57b is parallel to each other with focusing ring 25c, and interference fit ground inserts recess 68.In recess 68, the end face 68a of recess 68 and the upper surface 57a of reference plate 57 are exposed to recess 68 inside.
In addition, because collimating apparatus 38 disposes in the mode relative with the lower surface 57b of reference plate 57, its result, the upper surface 57a of the upper surface 25a of focusing ring 25c, the end face 68a of recess 68, reference plate 57 and lower surface 57b are positioned at from the optical axis of the low-coherent light of collimating apparatus 38 irradiations.
In the consumption measuring method of present embodiment, vertically shine low-coherent light from upper surface 25a, the end face 68a of recess 68, the upper surface 57a and the lower surface 57b of reference plate 57 of collimating apparatus 38 and focusing ring 25c.Here, because upper surface 25a, end face 68a, upper surface 57a and lower surface 57b be parallel to each other, so be positioned on the same axis from the reflected light of the low-coherent light of these faces.
At this moment, observation is during from the reflected light of each face and from the interference waveform between the reflected light 54 of reference mirror 42, as shown in figure 10, along with reference mirror displacement increases, from the interference waveform 69 of the reflected light of lower surface 57b and reflected light 54, from the interference waveform 70 of the reflected light of upper surface 57a and reflected light 54, from the interference waveform 71 of the reflected light of end face 68a and reflected light 54, reach from the interference waveform 72 of the reflected light of upper surface 25a and reflected light 54 detected successively.
Here, the optical path length that comes and goes in reference plate 57 along thickness direction of the difference E of the position of interference waveform 69 and interference waveform 70 and low-coherent light is corresponding, and corresponding with the thickness of reference plate 57.The optical path length that comes and goes in focusing ring 25c along thickness direction between end face 68a and upper surface 25a of the difference D of the position of interference waveform 71 and interference waveform 72 and low-coherent light is corresponding, and corresponding with end face 68a and the thickness between the upper surface 25a among the focusing ring 25c.In addition, the thickness L with gap reference plate 57 in the recess 68 of the difference G of the position of interference waveform 70 and interference waveform 71 and focusing ring 25c is corresponding.
When focusing ring 25c consumed, having only consumption face was that the position of upper surface 25a changes, arrive upper surface 25a measuring light 50 optical path length and shorten from the catoptrical optical path length of upper surface 25a.That is, the optical path length that comes and goes in focusing ring 25c along thickness direction between end face 68a and upper surface 25a of low-coherent light shortens.Its result, interference waveform 72 to interference waveform 71 near and move to interference waveform 72a.The difference F of the position of interference waveform 72 and interference waveform 72a and the location variation of upper surface 25a are that the consumption of focusing ring 25c is corresponding.
Yet, the temperature of focusing ring 25c changes and during thermal expansion, the optical path length that comes and goes in focusing ring 25c along thickness direction between end face 68a and upper surface 25a of low-coherent light just changes, thereby need eliminate the influence that thermal expansion produced of focusing ring 25c from the difference F of the position of interference waveform 72 and interference waveform 72a.
In the present embodiment, therewith accordingly, and above-mentioned the 1st embodiment similarly utilizes the ratio of optical path lengths (the 2nd optical path length) in the optical path length that comes and goes in focusing ring 25c along thickness direction between end face 68a and the upper surface 25a (below, be called " optical path length in the focusing ring 25c ") (the 1st optical path length) and reference plate 57 of low-coherent light.
Specifically, optical path length is made as L in focusing ring 25c A, optical path lengths are made as L in the reference plate 57 B, the focusing ring 25c between end face 68a and the upper surface 25a original depth be made as d AO, reference plate 57 original depth be d BO, the focusing ring 25c between end face 68a and the upper surface 25a thermal expansion the time thickness be made as d AT, reference plate 57 thermal expansion the time thickness be made as d BT, the consumption of the focusing ring 25c interdependent refractive index of temperature that is made as δ, silicon is made as n T, silicon thermal expansivity be made as α T, focusing ring 25c thermal expansion the time temperature when being made as T, optical path length and the ratio of reference plate 57 interior optical path lengths are as shown in the formula shown in (D) in the focusing ring 25c.
L A/L B＝n Td AT/n Td BT＝n T(d AO-δ)(1+α TT)/n Td BO(1+α TT)...(D)
And the above-mentioned formula (A) in above-mentioned formula (D) and the 1st embodiment similarly can convert following formula (E) to.
L A/L B＝(d AO-δ)/d BO...(E)
Its result, following formula (F) expression that the coefficient with temperature correlation of can being disappeared by the consumption δ of focusing ring 25c obtains.
δ＝d AO-d BO(L A/L B)...(F)
Thus, measure the original depth d of the focusing ring 25c between end face 68a and the upper surface 25a AOAnd the original depth d of reference plate 57 BO, under temperature arbitrarily, as long as measure optical path length L in the focusing ring 25c AAnd optical path length L in the reference plate 57 BJust can calculate the consumption δ of focusing ring 25c.
In the consumption measuring method of above-mentioned present embodiment, because upper surface 25a, end face 68a, upper surface 57a and lower surface 57b are parallel to each other and are positioned on the same axis, so be positioned on the same axis from the reflected light of upper surface 25a, end face 68a, upper surface 57a and lower surface 57b.Therefore, by from low-coherent light of collimating apparatus 38 irradiations, just can obtain needed whole reflected light.Its result can reduce the quantity of collimating apparatus, and then can simplify the structure of member measurer for thickness 33.
In the recess 68 of above-mentioned focusing ring 25c and gap reference plate 57 can fill the material that luminous energy sees through, or what are not filled yet.But, preferably fill for example heat transmissibility silicon rubber of the high material of thermal conductivity.
In the consumption measuring method of above-mentioned present embodiment, carried out the measurement of consumption for a focusing ring 25c, but also can be for example, shown in Figure 11 (A), coupling mechanism 61 is set again and makes measuring light 50 be branched off into multi beam to optical fiber 41b from coupling mechanism 37, carry out the measurement of the consumption of a plurality of focusing ring 25c thus, in addition, also can be for example, shown in Figure 11 (B), be provided with to optical fiber 41b and on the basis of coupling mechanism 61 multiplexer 73 be set again and carry out the measurement of the consumption of a plurality of focusing ring 25c.
In addition, also can for example pass through, shown in Figure 11 (C), coupling mechanism 61 is set again and makes measuring light 50 be branched off into multi beam to optical fiber 41b from coupling mechanism 37, in a focusing ring 25c, carry out the measurement of the consumption of a plurality of positions, and, also can be for example, shown in Figure 11 (D), a plurality of focusing ring 25c separately on carry out the measurement of the consumption of a plurality of positions.
Below, the consumption measuring method of the 3rd embodiment of the present invention is described.
In the present embodiment, the measuring object of consumption is not focusing ring but upper electrode plate, and this point is different with the 1st embodiment or the 2nd embodiment.
Figure 12 represents that roughly consumption measuring method by present embodiment measures the cut-open view of structure of the upper electrode plate of consumption.
In Figure 12, upper electrode plate 27 has reference plate 74.Reference plate 74 is the tabular members that are made of silicon, and is thinner and little than upper electrode plate 27, and has upper surface 74a (the 1st non-consumptive material on-consumable face) and the lower surface 74b (the 2nd non-consumptive material on-consumable face) that is parallel to each other.Because reference plate 74 inserts with interference fit in the recess 75 on the upper surface 27a be located in upper electrode plate 27, thus with upper electrode plate 27 thermal couplings.On the reference plate 74 that is inserted into recess 75, lower surface 74b is exposed on recess 75 inside, and upper surface 74a is relative with coldplate 28.
In the consumption measuring method of present embodiment, vertically shine low-coherent light from the upper surface 27a and the lower surface 27b of collimating apparatus 38 and upper electrode plate 27, reception is from the reflected light of the low-coherent light of upper surface 27a and lower surface 27b, and vertically shine low-coherent light from the upper surface 74a and the lower surface 74b of collimating apparatus 38a and reference plate 74, receive reflected light from the low-coherent light of upper surface 74a and lower surface 74b.
At this moment, observation is during from the reflected light of each face with from the interference waveform between the reflected light 54 of reference mirror 42, as shown in figure 13, along with reference mirror displacement increases, from the interference waveform 76 of the reflected light of upper surface 27a and reflected light 54, from the interference waveform 77 of the reflected light of lower surface 27b and reflected light 54, from the interference waveform 78 of the reflected light of upper surface 74a and reflected light 54, reach from the interference waveform 79 of the reflected light of lower surface 74b and reflected light 54 detected successively.Here, the optical path length that comes and goes in upper electrode plate 27 along thickness direction of the difference H of the position of interference waveform 76 and interference waveform 77 and low-coherent light is corresponding, and corresponding with the thickness of upper electrode plate 27.In addition, the optical path length that comes and goes in reference plate 74 along thickness direction of the difference I of the position of interference waveform 78 and interference waveform 79 and low-coherent light is corresponding, and corresponding with the thickness of reference plate 74.
When upper electrode plate 27 consumes, having only consumption face is that the position of lower surface 27b changes, the catoptrical optical path length that the optical path length of the measuring light 50 of arrival lower surface 27b reaches from lower surface 27b shortens, that is, the optical path length that comes and goes in upper electrode plate 27 along thickness direction of low-coherent light shortens.Its result, interference waveform 77 to interference waveform 76 near and move to interference waveform 77a.The difference J of the position of interference waveform 77 and interference waveform 77a and the location variation of lower surface 27b are that the consumption of upper electrode plate 27 is corresponding.
Yet, in the present embodiment, also need to eliminate the influence that thermal expansion produced of upper electrode plate 27 from the difference J of the position of interference waveform 77 and interference waveform 77a, in the present embodiment, with above-mentioned the 1st embodiment or the 2nd embodiment similarly utilize low-coherent light the optical path length that in upper electrode plate 27, comes and goes along thickness direction (below, be called " upper electrode plate 27 in optical path lengths ") ratio of the optical path length that reference plate 74 in, comes and goes along thickness direction of (the 1st optical path length) and low-coherent light (below, be called " reference plate 74 interior optical path lengths ") (the 2nd optical path length).
Specifically, optical path length is made as L in upper electrode plate 27 C, optical path lengths are made as L in the reference plate 74 D, upper electrode plate 27 original depth be made as d CO, reference plate 74 original depth be made as d DO, upper electrode plate 27 thermal expansion the time thickness be made as d CT, reference plate 74 thermal expansion the time thickness be made as d DT, upper electrode plate 27 consumption be made as δ 1, silicon the interdependent refractive index of temperature be made as n T, silicon thermal expansivity be made as α T, upper electrode plate 27 thermal expansion the time temperature when being made as T, optical path lengths and the ratio of reference plate 74 interior optical path lengths are as shown in the formula shown in (G) in the upper electrode plate 27.
L C/L D＝n Td CT/n Td DT＝n T(d CO-δ 1)(1+α TT)/n Td DO(1+α TT)...(G)
Here, since reference plate 74 and upper electrode plate 27 thermal couplings, so the temperature of reference plate 74 is identical with the temperature of upper electrode plate 27, and owing to reference plate 74 and upper electrode plate 27 are made of silicon in the same manner, so in above-mentioned formula (G), can cancellation and temperature T, the interdependent refractive index n of temperature TAnd thermalexpansioncoefficient TRelevant item, above-mentioned formula (G) can convert following formula (H) to.
L C/L D＝(d CO-δ 1)/d DO...(H)
Its result can be by the consumption δ of upper electrode plate 27 1Following formula (I) expression that the coefficient with temperature correlation of disappearing obtains.
δ 1＝d CO-d DO(L C/L D)...(I)
Thus, measure the original depth d of upper electrode plate 27 COAnd the original depth d of reference plate 74 DO, under temperature arbitrarily, as long as measure optical path length L in the upper electrode plate 27 CAnd optical path length L in the reference plate 74 DJust can calculate the consumption δ of upper electrode plate 27 1
In the consumption measuring method of above-mentioned present embodiment, with the 1st embodiment similarly, do not need to make the combined parallel of the lower surface 74b of the combination of lower surface 27b and upper surface 27a and upper surface 74a, thereby can easily carry out the configuration of consumptive material and non-consumptive material.
In addition, in the recess 75 of above-mentioned upper electrode plate 27 and gap reference plate 74, similarly also can fill material that luminous energy sees through for example translucent adhesive or quartz with the 1st embodiment, or fill the impervious material of light for example metal or resin, can also what not fill.
In the consumption measuring method of above-mentioned present embodiment, carry out the measurement of consumption for a upper electrode plate 27, and the measuring position of the consumption of this upper electrode plate 27 also is a position, but similarly also measuring light 50 can be branched off into multi beam and on a upper electrode plate 27, carry out the measurement of the consumption of a plurality of positions with the 1st embodiment, in addition, also can carry out the measurement of consumption to a plurality of upper electrode plate 27.
In addition, in the variation of the consumption measuring method of present embodiment,, just can obtain the necessary whole reflected light of measurement of the consumption of upper electrode plate from a branch of low-coherent light of collimating apparatus 38 irradiations.
Figure 14 is the cut-open view of the structure of the variation of roughly representing the consumption measuring method by the present embodiment upper electrode plate of measuring consumption.
In Figure 14, the upper electrode plate 27c that is made of silicon has reference plate 74, and has the recess 80 that is located in upper surface 27a.This recess 80 below in the drawings has bottom surface 80a (consumptive material on-consumable face), and this bottom surface 80a is parallel with the lower surface 27b of upper electrode plate 27c.In this variation, reference plate 74 is inserted in the recess 80 with interference fit with lower surface 27b, the bottom surface 80a of recess 80, the upper surface 74a of reference plate 74 and the mode that lower surface 74b is parallel to each other of upper electrode plate 27c.In recess 80, the bottom surface 80a of recess 80 and the lower surface 74b of reference plate 74 are exposed on recess 80 inside.
In addition, because collimating apparatus 38 disposes in the mode relative with the upper surface 74a of reference plate 74, its result, the upper surface 74a of the lower surface 27b of upper electrode plate 27c, the bottom surface 80a of recess 80, reference plate 74 and lower surface 74b are positioned at from the optical axis of the low-coherent light of collimating apparatus 38 irradiations.
In this variation, vertically shine low-coherent light from lower surface 27b, the bottom surface 80a of recess 80, the upper surface 74a and the lower surface 74b of reference plate 74 of collimating apparatus 38 and upper electrode plate 27c.Here, because lower surface 27b, bottom surface 80a, upper surface 74a and lower surface 74b be parallel to each other, so be positioned on the same axis from the reflected light of the low-coherent light of these faces.
At this moment, observation is during from the reflected light of each face with from the interference waveform between the reflected light 54 of reference mirror 42, as shown in figure 15, along with reference mirror displacement increases, from the interference waveform 81 of the reflected light of upper surface 74a and reflected light 54, from the interference waveform 82 of the reflected light of lower surface 74b and reflected light 54, from the interference waveform 83 of the reflected light of bottom surface 80a and reflected light 54, reach from the interference waveform 84 of the reflected light of lower surface 27b and reflected light 54 detected successively.
Here, the optical path length that comes and goes in reference plate 74 along thickness direction of the difference I of the position of interference waveform 81 and interference waveform 82 and low-coherent light is corresponding, and corresponding with the thickness of reference plate 74.The optical path length that comes and goes in upper electrode plate 27c along thickness direction between bottom surface 80a and lower surface 27b of the difference H of the position of interference waveform 83 and interference waveform 84 and low-coherent light is corresponding, and it is corresponding with bottom surface 80a and the thickness between the lower surface 27b among the upper electrode plate 27c, in addition, the thickness L in the recess 80 of the difference K of the position of interference waveform 82 and interference waveform 83 and upper electrode plate 27c and gap reference plate 74 1Corresponding.
When upper electrode plate 27c consumed, having only consumption face was that the position of lower surface 27b changes, arrive lower surface 27b measuring light 50 optical path length and shorten from the catoptrical optical path length of lower surface 27b.That is, low-coherent light between bottom surface 80a and lower surface 27b, the optical path length that comes and goes in upper electrode plate 27c along thickness direction shortens.Its result, interference waveform 84 to interference waveform 83 near and move to interference waveform 84a.The difference J of the position of interference waveform 84 and interference waveform 84a and the location variation of lower surface 27b are that the consumption of upper electrode plate 27c is corresponding.
In this variation, also need to eliminate the influence that thermal expansion produced of upper electrode plate 27c from the difference J of the position of interference waveform 84 and interference waveform 84a, and above-mentioned the 1st embodiment or the 2nd embodiment similarly utilize the ratio of optical path lengths (the 2nd optical path length) in the optical path length that comes and goes in upper electrode plate 27c along thickness direction between bottom surface 80a and the lower surface 27b (below, be called " optical path length in the upper electrode plate 27c ") (the 1st optical path length) and reference plate 74 of low-coherent light.
Specifically, optical path length is made as L in upper electrode plate 27c C, optical path lengths are made as L in the reference plate 74 D, the upper electrode plate 27c between bottom surface 80a and the lower surface 27b original depth be made as d CO, reference plate 74 original depth be made as d DO, the upper electrode plate 27c between bottom surface 80a and the lower surface 27b thermal expansion the time thickness be made as d CT, reference plate 74 thermal expansion the time thickness be made as d DT, upper electrode plate 27c consumption be made as δ 1, silicon the interdependent refractive index of temperature be n T, silicon thermal expansivity be made as α T, upper electrode plate 27c thermal expansion the time temperature when being made as T, optical path length and the ratio of reference plate 74 interior optical path lengths are as shown in the formula shown in (J) in the upper electrode plate 27c.
L C/L D＝n Td CT/n Td DT＝n T(d CO-δ 1)(1+α TT)/n Td DO(1+α TT)...(J)
And the above-mentioned formula (G) in above-mentioned formula (J) and the present embodiment similarly can convert following formula (K) to.
L C/L D＝(d CO-δ 1)/d DO...(K)
Its result, following formula (L) expression that the coefficient with temperature correlation of can being disappeared by the consumption δ 1 of upper electrode plate 27c obtains.
δ1＝d CO-d DO(L C/L D)...(L)
Thus, measure the original depth d of the upper electrode plate 27c between bottom surface 80a and the lower surface 27b COAnd the original depth d of reference plate 74 DO, under temperature arbitrarily, as long as measure optical path length L in the upper electrode plate 27c CAnd optical path length L in the reference plate 74 DJust can calculate the consumption δ of upper electrode plate 27c 1
In the variation of the consumption measuring method of above-mentioned present embodiment, similarly be positioned on the same axis with the 2nd embodiment from the reflected light of lower surface 27b, bottom surface 80a, upper surface 74a and lower surface 74b, thereby can reduce the quantity of collimating apparatus, and then can simplify the structure of member measurer for thickness 33.
In addition, in the recess 80 of above-mentioned upper electrode plate 27c and gap reference plate 74 similarly can fill the material that luminous energy sees through with the 2nd embodiment, or what are not filled yet.
In the variation of the consumption measuring method of above-mentioned present embodiment, a upper electrode plate 27c has been carried out the measurement of consumption, but with the 2nd embodiment similarly also can be by measuring light 50 is branched off into multi beam, carry out the measurement of the consumption of a plurality of upper electrode plate 27c, in addition, also can on a upper electrode plate 27c, carry out the measurement of the consumption of a plurality of positions, but also can a plurality of upper electrode plate 27c separately on carry out the measurement of the consumption of a plurality of positions.
Below, the consumption measuring method of the 4th embodiment of the present invention is described.
In the present embodiment, measure the consumption of focusing ring and upper electrode plate simultaneously, this point is different with the 1st to the 3rd embodiment.
Figure 16 represents that roughly consumption measuring method by present embodiment measures the cut-open view of the structure of the focusing ring of consumption and upper electrode plate.
In Figure 16, focusing ring 25 (the 1st consumptive material) and upper electrode plate 27 (the 2nd consumptive material) are that upper surface 25a (the 1st consumptive material consume face) with focusing ring 25 and lower surface 25b (the 1st consumptive material on-consumable face) is parallel to each other and the lower surface 27b of upper electrode plate 27 (the 2nd consumptive material consumes face) and upper surface 27a (the 2nd consumptive material on-consumable face) are parallel to each other mode dispose.
In addition, lower surface 57b of reference plate 57 (the 1st non-consumptive material on-consumable face) and upper surface 57a (the 2nd non-consumptive material on-consumable face) are parallel to each other and are positioned on the same axis, lower surface 74b of reference plate 74 (the 3rd non-consumptive material on-consumable face) and upper surface 74a (the 4th non-consumptive material on-consumable face) are parallel to each other and are positioned on the same axis, reference plate 57 (the 1st non-consumptive material) is inserted in the recess 58 with interference fit, and reference plate 74 (the 2nd non-consumptive material) is inserted in the recess 75 with interference fit.
In the consumption measuring method of present embodiment, vertically shine low-coherent light with upper surface 25a, lower surface 25b, lower surface 27b and upper surface 27a from collimating apparatus 38.Here, can be if select through the long light of ripple of focusing ring 25 as low-coherent light, then the part of low-coherent light sees through focusing ring 25 and shines to upper electrode plate 27.Therefore, not only produce the reflected light of low-coherent light, also produce the reflected light of low-coherent light from lower surface 27b and upper surface 27a from upper surface 25a and lower surface 25b.Receive from the collimated device 38 of the reflected light of upper surface 25a, lower surface 25b, lower surface 27b and upper surface 27a.In addition, vertically shine low-coherent light from collimating apparatus 38a and lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a.Reference plate 57, focusing ring 25 and upper electrode plate 27 are made of silicon, if with the above-mentioned long light of ripple of similarly selecting, the part of low-coherent light sees through reference plate 57, focusing ring 25 and upper electrode plate 27 to reference plate 74 irradiations.Therefore, not only produce the reflected light of low-coherent light, also produce the reflected light of low-coherent light from lower surface 74b and upper surface 74a from lower surface 57b and upper surface 57a.Collimated device 38a receives from the reflected light of lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a.
At this moment, observation is during from the reflected light of each face with from the interference waveform between the reflected light 54 of reference mirror 42, as shown in figure 17, along with reference mirror displacement increases, from the reflected light of lower surface 25b and the interference waveform 55 of reflected light 54, from the reflected light of upper surface 25a and the interference waveform 56 of reflected light 54, from the reflected light of lower surface 57b and the interference waveform 59 of reflected light 54, from the reflected light of upper surface 57a and the interference waveform 60 of reflected light 54, from the reflected light of lower surface 27b and the interference waveform 85 of reflected light 54, from the reflected light of upper surface 27a and the interference waveform 86 of reflected light 54, from the reflected light of lower surface 74b and the interference waveform 87 of reflected light 54, and it is detected successively from the interference waveform 88 of the reflected light of upper surface 74a and reflected light 54.
Here, the difference D of the position of interference waveform 55 and interference waveform 56 is corresponding with optical path length in the focusing ring 25, the difference E of the position of interference waveform 59 and interference waveform 60 is corresponding with optical path length in the reference plate 57, the difference I of the position of interference waveform 85 and interference waveform 86 is corresponding with optical path length in the upper electrode plate 27, and the difference H of the position of interference waveform 87 and interference waveform 88 is corresponding with optical path length in the reference plate 74.
When focusing ring 25 and upper electrode plate 27 consumed, consumption face was that the position of upper surface 25a and the position of lower surface 27b change, and optical path length and upper electrode plate 27 interior optical path lengths shorten in the focusing ring 25.Its result, interference waveform 56 to interference waveform 55 near and to interference waveform 56a migration, and interference waveform 85 to interference waveform 86 near and move to interference waveform 85a.The difference F of the position of interference waveform 56 and interference waveform 56a and the location variation of upper surface 25a are that the consumption of focusing ring 25 is corresponding, and the difference J of the position of interference waveform 85 and interference waveform 85a and the location variation of lower surface 27b are that the consumption of upper electrode plate 27 is corresponding.
Yet, in the present embodiment, also need from the difference F of the position of interference waveform 56 and interference waveform 56a, eliminate the influence that thermal expansion produced of focusing ring 25 and upper electrode plate 27 with the difference J of the position of interference waveform 85 and interference waveform 85a, in the present embodiment, similarly utilize the ratio of optical path lengths (the 3rd optical path length) in focusing ring 25 interior optical path lengths (the 1st optical path length) and the reference plate 57 with the above-mentioned the 1st and the 3rd embodiment, with the ratio of optical path length (the 2nd optical path length) in the upper electrode plate 27 with reference plate 74 interior optical path lengths (the 4th optical path length).
Particularly, optical path length L in the focusing ring 25 AWith optical path length L in the reference plate 57 BRatio shown in above-mentioned formula (A), in addition, optical path length L in the upper electrode plate 27 CWith optical path length L in the reference plate 74 DRatio shown in above-mentioned formula (G).Therefore, same with above-mentioned the 1st embodiment, the consumption δ of focusing ring 25 is by above-mentioned formula (C) (δ=d AO-d BO(L A/ L B)) expression, same with above-mentioned the 3rd embodiment in addition, the consumption δ of upper electrode plate 27 1By above-mentioned formula (1) (δ 1=d CO-d DO(L C/ L D)) expression.
Its result, the original depth d of measurement focusing ring 25 AOAnd the original depth d of reference plate 57 BO, under temperature arbitrarily, as long as measure optical path length L in the focusing ring 25 AAnd optical path length L in the reference plate 57 BJust can calculate the consumption δ of focusing ring 25, and measure the original depth d of upper electrode plate 27 COAnd the original depth d of reference plate 74 DO, under temperature arbitrarily, as long as measure optical path length L in the upper electrode plate 27 CAnd optical path length L in the reference plate 74 DJust can calculate the consumption δ of upper electrode plate 27 1
In the consumption measuring method of above-mentioned present embodiment, because upper surface 25a, lower surface 25b, lower surface 27b and upper surface 27a are parallel to each other, so be positioned on the same axis from the reflected light of upper surface 25a, lower surface 25b, lower surface 27b and upper surface 27a.Therefore, just can obtain needed reflected light from a branch of low-coherent light of collimating apparatus 38 irradiations from focusing ring 25 and upper electrode plate 27.In addition, because lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a be parallel to each other and be positioned on the same axis, so be positioned on the same axis from the reflected light of lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a.Therefore, shine a branch of low-coherent light from collimating apparatus 38a and just can obtain needed reflected light from reference plate 57 and reference plate 74, its result can reduce the quantity of collimating apparatus, and then can simplify the structure of member measurer for thickness 33.
In addition, in the consumption measuring method of above-mentioned present embodiment, with low-coherent light from focusing ring 25 to upper electrode plate 27 irradiation, but also collimating apparatus 38,38a can be configured in upper electrode plate 27 and with low-coherent light from upper electrode plate 27 to focusing ring 25 irradiations.
In addition, in the variation of the consumption measuring method of present embodiment, just can obtain the needed whole reflected light of measurement of the consumption of focusing ring and upper electrode plate from a branch of low-coherent light of collimating apparatus 38 irradiations.
Figure 18 is the cut-open view that the variation of roughly representing the consumption measuring method by present embodiment is measured the structure of the focusing ring of consumption and upper electrode plate.
In Figure 18, focusing ring 25c (the 1st consumptive material), upper electrode plate 27c (the 2nd consumptive material), reference plate 57 (the 1st non-consumptive material) and reference plate 74 (the 2nd non-consumptive material) are configured to the upper surface 25a (the 1st consumptive material consumes face) of focusing ring 25c, the end face 68a of recess 68 (the 1st consumptive material on-consumable face), the lower surface 27b of upper electrode plate 27c (the 2nd consumptive material consumes face), the bottom surface 80a of recess 80 (the 2nd consumptive material on-consumable face), lower surface 57b of reference plate 57 (the 1st non-consumptive material on-consumable face) and upper surface 57a (the 2nd non-consumptive material on-consumable face) are parallel to each other and are positioned on the same axis, and lower surface 74b of reference plate 74 (the 3rd non-consumptive material on-consumable face) and upper surface 74a (the 4th non-consumptive material on-consumable face) are parallel to each other and are positioned on the same axis.Here, reference plate 57 is inserted in the recess 68 of focusing ring 25c with interference fit, and reference plate 74 is inserted in the recess 80 of upper electrode plate 27c with interference fit.
In this variation, vertically shine low-coherent light with upper surface 25a, end face 68a, lower surface 27b, bottom surface 80a, lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a from collimating apparatus 38.Here, because upper surface 25a, end face 68a, lower surface 27b, bottom surface 80a, lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a are parallel to each other, so the reflected light from the low-coherent light of these faces is positioned on the same axis, and collimated device 38 receives.
At this moment, observation is during from the reflected light of each face with from the interference waveform between the reflected light 54 of reference mirror 42, as shown in figure 19, along with reference mirror displacement increases, from the reflected light of lower surface 57b and the interference waveform 69 of reflected light 54, from the reflected light of upper surface 57a and the interference waveform 70 of reflected light 54, from the reflected light of end face 68a and the interference waveform 71 of reflected light 54, from the reflected light of upper surface 25a and the interference waveform 72 of reflected light 54, from the reflected light of lower surface 27b and the interference waveform 89 of reflected light 54, from the reflected light of bottom surface 80a and the interference waveform 90 of reflected light 54, from the reflected light of lower surface 74b and the interference waveform 91 of reflected light 54, and it is detected in order from the interference waveform 92 of the reflected light of upper surface 74a and reflected light 54.
Here, the difference E of the position of interference waveform 69 and interference waveform 70 is corresponding with optical path length in the reference plate 57, the difference D of the position of interference waveform 71 and interference waveform 72 is corresponding with optical path length in the focusing ring 25c, thickness L with gap reference plate 57 in the recess 68 of the difference G of the position of interference waveform 70 and interference waveform 71 and focusing ring 25c is corresponding, the difference H of the position of interference waveform 89 and interference waveform 90 is corresponding with optical path length in the upper electrode plate 27c, optical path lengths are corresponding in the difference I of the position of interference waveform 91 and interference waveform 92 and the reference plate 74, and the thickness L1 with gap reference plate 74 in the difference K of the position of interference waveform 90 and interference waveform 91 and the recess 80 of upper electrode plate 27c is corresponding.
When focusing ring 25c and upper electrode plate 27c consumed, consumption face was that the position of upper surface 25a and the position of lower surface 27b change, and the interior optical path length of optical path length and upper electrode plate 27c shortens in the focusing ring 25c.Its result, interference waveform 72 to interference waveform 71 near and to interference waveform 72a migration, and interference waveform 89 to interference waveform 90 near and move to interference waveform 89a.The difference F of the position of interference waveform 72 and interference waveform 72a and the location variation of upper surface 25a are that the consumption of focusing ring 25c is corresponding, and the difference J of the position of interference waveform 89 and interference waveform 89a and the location variation of lower surface 27b are that the consumption of upper electrode plate 27c is corresponding.
Yet, in this variation, also need from the difference F of the position of interference waveform 72 and interference waveform 72a, eliminate the influence that thermal expansion produced of focusing ring 25c and upper electrode plate 27c with the difference J of the position of interference waveform 89 and interference waveform 89a, in this variation, similarly utilize the ratio of optical path lengths (the 3rd optical path length) in optical path length in the focusing ring 25c (the 1st optical path length) and the reference plate 57 with the variation of the consumption measuring method of the consumption measuring method of above-mentioned the 2nd embodiment and the 3rd embodiment, with the ratio of optical path length in the upper electrode plate 27c (the 2nd optical path length) with reference plate 74 interior optical path lengths (the 4th optical path length).
Specifically, optical path length L in the focusing ring 25c AWith optical path length L in the reference plate 57 BRatio shown in above-mentioned formula (D), in addition, optical path length Lc and reference plate 74 interior optical path length L in the upper electrode plate 27c DRatio shown in above-mentioned formula (J).Therefore, same with above-mentioned the 2nd embodiment, the consumption δ of focusing ring 25c is by above-mentioned formula (F) (δ=d AO-d BO(L A/ L B)) expression, same with the variation of the consumption measuring method of above-mentioned the 3rd embodiment in addition, the consumption δ of upper electrode plate 27c 1By above-mentioned formula (L) (δ 1=d CO-d DO(L C/ L D)) expression.
Its result, the original depth d of measurement focusing ring 25c AOAnd the original depth d of reference plate 57 BO, under temperature arbitrarily, as long as measure optical path length L in the focusing ring 25c AAnd optical path length L in the reference plate 57 BJust can calculate the consumption δ of focusing ring 25c, and measure the original depth d of upper electrode plate 27c COAnd the original depth d of reference plate 74 DO, under temperature arbitrarily, as long as measure optical path length L in the upper electrode plate 27c CAnd optical path length L in the reference plate 74 DJust can calculate the consumption δ of upper electrode plate 27c 1
In the variation of the consumption measuring method of above-mentioned present embodiment, because upper surface 25a, end face 68a, lower surface 27b, bottom surface 80a, lower surface 57b, upper surface 57a, lower surface 74b and upper surface 74a are parallel to each other and are positioned on the same axis, so come the reflected light of Self-focusing ring 25c, upper electrode plate 27c, reference plate 57 and reference plate 74 to be positioned on the same axis.Therefore, just can obtain needed whole reflected light from a branch of low-coherent light of collimating apparatus 38 irradiations.Its result can reduce the quantity of collimating apparatus, and then can simplify the structure of member measurer for thickness 33.
The consumption measuring method of the respective embodiments described above not only can be used in the measurement of the consumption of members such as focusing ring or upper electrode plate, can also be applicable to for example mixed composition volatilization of member that thickness changes along with the process of time and the measurement of the variation in thickness surplus of the member of variation in thickness.
In addition, the substrate that the substrate board treatment of carrying out the consumption measuring method of the respective embodiments described above is implemented plasma etching process processes is not limited to the wafer of semiconductor device by using, also can be FPD employed various substrates, photomask, CD substrate, the printed circuit board (PCB)s etc. such as (Flat Panel Display) that comprise LCD (Liquid Crystal Display) etc.
More than, use the respective embodiments described above to be illustrated about the present invention, but the invention is not restricted to the respective embodiments described above.

Claims (10)

1. consumption measuring method, it is the consumption measuring method of following consumptive material, this consumptive material have be parallel to each other, be exposed to consumptive material in the environment that makes consumptive material consumption and consume face and be exposed to the consumptive material on-consumable face that does not make in the environment that above-mentioned consumptive material consumes, this consumption measuring method is characterised in that
With non-consumptive material and above-mentioned consumptive material thermal coupling, this non-consumptive material is by constituting with above-mentioned consumptive material identical materials, its have be parallel to each other, be exposed to the 1st non-consumptive material on-consumable face and the 2nd non-consumptive material on-consumable face that do not make in the environment that this non-consumptive material consumes,
Vertically shine low-coherent light with above-mentioned consumptive material consumption face and above-mentioned consumptive material on-consumable face to above-mentioned consumptive material, reception consumes the 1st optical path length that comes and goes along thickness direction of the reflected light of above-mentioned low-coherent light of face and above-mentioned consumptive material on-consumable face and the above-mentioned low-coherent light of instrumentation in above-mentioned consumptive material from above-mentioned consumptive material
Vertically shine low-coherent light with the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face to above-mentioned non-consumptive material, reception is from the 2nd optical path length that comes and goes in above-mentioned non-consumptive material along thickness direction of the reflected light of the low-coherent light of the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face and the above-mentioned low-coherent light of instrumentation
Based on the ratio of above-mentioned the 1st optical path length and above-mentioned the 2nd optical path length, calculate the consumption of above-mentioned consumptive material.
2. consumption measuring method as claimed in claim 1 is characterized in that, above-mentioned the 1st optical path length is being made as L A, above-mentioned the 2nd optical path length is made as L B, above-mentioned consumptive material original depth be made as d AO, above-mentioned non-consumptive material original depth be made as d BO, above-mentioned consumptive material consumption when being made as δ, the consumption of above-mentioned consumptive material is represented by following formula (1).
δ＝d AO-d BO×L A/L B...(1)。
3. as claim 1 or 2 above-mentioned consumption measuring methods, it is characterized in that, respectively to above-mentioned consumptive material and above-mentioned non-consumptive material irradiation low-coherent light.
4. consumption measuring method as claimed in claim 1 or 2, it is characterized in that, consuming face, above-mentioned consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face with above-mentioned consumptive material is parallel to each other and is positioned at mode on the same axis, dispose above-mentioned consumptive material and above-mentioned non-consumptive material
Consume face, above-mentioned consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face and the above-mentioned the 2nd non-consumptive material on-consumable face vertically to above-mentioned consumptive material and above-mentioned non-consumptive material irradiation low-coherent light with above-mentioned consumptive material.
5. consumption measuring method as claimed in claim 1 or 2 is characterized in that, above-mentioned consumptive material is to be configured in to use plasma to come substrate is implemented circular focusing ring in the process chamber of the substrate board treatment handled or discoideus battery lead plate.
6. consumption measuring method, it is the 1st following consumptive material and the consumption measuring method of the 2nd consumptive material, the 1st consumptive material has and is parallel to each other, being exposed to the 1st consumptive material in the environment that makes the 1st consumptive material consumption consumes face and is exposed to the 1st consumptive material on-consumable face that does not make in the environment that above-mentioned the 1st consumptive material consumes, the 2nd consumptive material has and is parallel to each other, being exposed to the 2nd consumptive material in the environment that makes the 2nd consumptive material consumption consumes face and is exposed to the 2nd consumptive material on-consumable face that does not make in the environment that above-mentioned the 2nd consumptive material consumes, this consumption measuring method is characterised in that
Consume face, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material with above-mentioned the 1st consumptive material and consume face and above-mentioned the 2nd consumptive material on-consumable face and be parallel to each other and be positioned at mode on the same axis, dispose above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material,
With the 1st non-consumptive material and above-mentioned the 1st consumptive material thermal coupling, the 1st non-consumptive material is by constituting with above-mentioned the 1st consumptive material identical materials, the 1st non-consumptive material have be parallel to each other, be exposed to the 1st non-consumptive material on-consumable face and the 2nd non-consumptive material on-consumable face that do not make in the environment that the 1st non-consumptive material consumes
With the 2nd non-consumptive material and above-mentioned the 2nd consumptive material thermal coupling, the 2nd non-consumptive material is by constituting with above-mentioned the 2nd consumptive material identical materials, the 2nd non-consumptive material have be parallel to each other, be exposed to the 3rd non-consumptive material on-consumable face and the 4th non-consumptive material on-consumable face that do not make in the environment that the 2nd non-consumptive material consumes
Be parallel to each other and be positioned at mode on the same axis with the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face, dispose the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material,
Consume face with above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes face and above-mentioned the 2nd consumptive material on-consumable face vertically shines low-coherent light to above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material, reception consumes face from above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes the reflected light of the above-mentioned low-coherent light of face and above-mentioned the 2nd consumptive material on-consumable face, and the 1st optical path length that in above-mentioned the 1st consumptive material, comes and goes along thickness direction of the above-mentioned low-coherent light of instrumentation, and the 2nd optical path length that in above-mentioned the 2nd consumptive material, comes and goes along thickness direction of above-mentioned low-coherent light
With the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face are vertically to the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material irradiation low-coherent light, reception is from the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the reflected light of the low-coherent light of the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face, and the 3rd optical path length that in the above-mentioned the 1st non-consumptive material, comes and goes along thickness direction of the above-mentioned low-coherent light of instrumentation, and the 4th optical path length that in the above-mentioned the 2nd non-consumptive material, comes and goes along thickness direction of above-mentioned low-coherent light
Based on the ratio of above-mentioned the 1st optical path length and above-mentioned the 3rd optical path length, calculate the consumption of above-mentioned the 1st consumptive material, and, calculate the consumption of above-mentioned the 2nd consumptive material based on the ratio of above-mentioned the 2nd optical path length and above-mentioned the 4th optical path length.
7. consumption measuring method as claimed in claim 6 is characterized in that, above-mentioned the 1st optical path length is being made as L A, above-mentioned the 3rd optical path length is made as L B, above-mentioned the 1st consumptive material original depth be made as d AO, above-mentioned the 1st non-consumptive material original depth be made as d BO, above-mentioned the 1st consumptive material consumption be δ AThe time, the consumption of above-mentioned the 1st consumptive material is by following formula (2) expression, and above-mentioned the 2nd optical path length is made as L C, above-mentioned the 4th optical path length is made as L D, above-mentioned the 2nd consumptive material original depth be made as d CO, above-mentioned the 2nd non-consumptive material original depth be made as d DO, above-mentioned the 2nd consumptive material consumption be made as δ CThe time, the consumption of above-mentioned the 2nd consumptive material is represented by following formula (3).
δ A＝d AO-d BO×L A/L B...(2)
δ C＝d CO-d DO×L C/L D...(3)。
8. as claim 6 or 7 described consumption measuring methods, it is characterized in that, respectively to the group of above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material and group's irradiation low-coherent light of the above-mentioned the 1st non-consumptive material and above-mentioned the 2nd non-consumptive material.
9. as claim 6 or 7 described consumption measuring methods, it is characterized in that, consume face with above-mentioned the 1st consumptive material, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumes face, above-mentioned the 2nd consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face are parallel to each other and are positioned at mode on the same axis, dispose above-mentioned the 1st consumptive material, above-mentioned the 2nd consumptive material, the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material
Consume face, above-mentioned the 1st consumptive material on-consumable face, above-mentioned the 2nd consumptive material consumption face, above-mentioned the 2nd consumptive material on-consumable face, the above-mentioned the 1st non-consumptive material on-consumable face, the above-mentioned the 2nd non-consumptive material on-consumable face, the above-mentioned the 3rd non-consumptive material on-consumable face and the above-mentioned the 4th non-consumptive material on-consumable face vertically to above-mentioned the 1st consumptive material, above-mentioned the 2nd consumptive material, the above-mentioned the 1st non-consumptive material and the above-mentioned the 2nd non-consumptive material irradiation low-coherent light with above-mentioned the 1st consumptive material.
10. as claim 6 or 7 described consumption measuring methods, it is characterized in that above-mentioned the 1st consumptive material and above-mentioned the 2nd consumptive material are to be configured in to use plasma to come substrate is implemented circular focusing ring in the process chamber of the substrate board treatment handled or discoideus battery lead plate.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2008331437A1 (en) * 2007-12-04 2009-06-11 Brian Investments Pty Ltd An optical component and wear sensor
EP2699710A1 (en) * 2011-04-20 2014-02-26 Koninklijke Philips N.V. Measurement device and method for vapour deposition applications
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DE102016014802B4 (en) 2016-12-13 2018-09-27 Universität Stuttgart Arrangement and method for robust two-beam interferometry with a triple-reflection arrangement
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US10859371B2 (en) * 2017-11-28 2020-12-08 Koh Young Technology Inc. Apparatus for inspecting substrate and method thereof
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86100245A (en) * 1986-01-08 1987-07-22 西安交通大学 On-line thickness testing equipment for transparent plates
WO2003083933A1 (en) * 2002-03-29 2003-10-09 Tokyo Electron Limited Treating device for element to be treated and treating method
WO2003087744A1 (en) * 2002-04-15 2003-10-23 Tokyo Electron Limited Method and device for measuring temperature of base material
CN1804567A (en) * 2005-01-12 2006-07-19 东京毅力科创株式会社 Temperature/thickness measuring apparatus, temperature/thickness measuring method, temperature/thickness measuring system, control system and control method
US20090026170A1 (en) * 2007-03-12 2009-01-29 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5731876A (en) * 1996-09-17 1998-03-24 Hewlett-Packard Company Method and apparatus for on-line determination of the thickness of a multilayer film using a partially reflecting roller and low coherence reflectometry
KR100714265B1 (en) 2001-04-18 2007-05-02 삼성전자주식회사 chuck assembly of ashing equipment for fabricating semiconductor device
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
JP4748803B2 (en) * 2005-12-06 2011-08-17 東京エレクトロン株式会社 Substrate processing apparatus, physical quantity measuring method of measured object in substrate processing apparatus, and storage medium
JP2009245988A (en) * 2008-03-28 2009-10-22 Tokyo Electron Ltd Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86100245A (en) * 1986-01-08 1987-07-22 西安交通大学 On-line thickness testing equipment for transparent plates
WO2003083933A1 (en) * 2002-03-29 2003-10-09 Tokyo Electron Limited Treating device for element to be treated and treating method
WO2003087744A1 (en) * 2002-04-15 2003-10-23 Tokyo Electron Limited Method and device for measuring temperature of base material
CN1804567A (en) * 2005-01-12 2006-07-19 东京毅力科创株式会社 Temperature/thickness measuring apparatus, temperature/thickness measuring method, temperature/thickness measuring system, control system and control method
US20090026170A1 (en) * 2007-03-12 2009-01-29 Tokyo Electron Limited Plasma processing apparatus and method of plasma distribution correction

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106468541A (en) * 2015-08-21 2017-03-01 朗姆研究公司 The abrasion detection of the consumable part in semiconductor manufacturing facility
CN106468541B (en) * 2015-08-21 2019-07-05 朗姆研究公司 The abrasion detection of consumable part in semiconductor manufacturing facility
CN109839076A (en) * 2017-11-28 2019-06-04 台湾积体电路制造股份有限公司 Wafer process chamber and device and method for checking wafer process chamber
CN109839076B (en) * 2017-11-28 2021-09-07 台湾积体电路制造股份有限公司 Wafer processing chamber and apparatus and method for inspecting wafer processing chamber
CN111466019A (en) * 2017-12-05 2020-07-28 朗姆研究公司 System and method for edge ring loss compensation
CN110243273A (en) * 2018-03-09 2019-09-17 东京毅力科创株式会社 The method of operating of analyzer and the system for checking focusing ring

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